CN101521240A - Gallium nitride solar isotope composite micro battery and manufacture method thereof - Google Patents

Gallium nitride solar isotope composite micro battery and manufacture method thereof Download PDF

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Publication number
CN101521240A
CN101521240A CN200910082827A CN200910082827A CN101521240A CN 101521240 A CN101521240 A CN 101521240A CN 200910082827 A CN200910082827 A CN 200910082827A CN 200910082827 A CN200910082827 A CN 200910082827A CN 101521240 A CN101521240 A CN 101521240A
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isotope
epitaxially grown
type gan
grown layer
gan epitaxially
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姜澜
朵英贤
李遂贤
陈海洋
王婷
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Beijing Institute of Technology BIT
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Beijing Institute of Technology BIT
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to a gallium nitride solar isotope composite micro battery and a manufacture method thereof, belonging to the energy source field in micro electromechanical systems. The gallium nitride solar isotope composite micro battery sequentially comprises an optical anti-reflective film, a sapphire substrate, a P type GaN epitaxially grown layer, an N type GaN epitaxially grown layer, a P type GaN epitaxially grown layer and an isotope radiation layer. The manufacture method of the gallium nitride solar isotope composite micro battery comprises the steps of plating the optical anti-reflective film at one side of a substrate, sequentially raising two back-to-back PN knots at the other side of the substrate by utilizing the metal organism chemical meteorology deposition process and at last fixing the isotope radiation layer at the outer side of the PN knots. The invention overcomes the defects that a solar battery can provide electric energy only under illumination, and an isotope battery has small output power. Compared with an isotope micro battery with the same parameters, the gallium nitride solar isotope composite micro battery has the output power improved by more than 10 times under the illumination condition.

Description

A kind of gallium nitride solar isotope composite micro battery and preparation method thereof
Technical field
The present invention is a kind of gallium nitride solar isotope composite micro battery and preparation method thereof, belongs to the energy field in the MEMS (micro electro mechanical system).
Background technology
In recent years, people are to the research Showed Very Brisk of microminiature Mechatronic Systems.Little energy is the developing bottleneck problem of micro-system, and studying efficient, long-life little energy is the target of always pursuing in the micro-system development.Countries in the world have all been carried out the research work of little energy in succession, produce many little energy.As micro fuel cell, micro internal combustion engine system, micro solar battery, miniature nuclear-isotope battery etc.Solar micro battery and isotope nuclear energy micro cell then demonstrate its distinctive advantage.
Solar cell utilizes the photoproduction Ford effect electricity generating principle of semi-conducting material, need not the clean energy resource of postcombustion and no waste discharging, the output that under the infrared radiation that solar irradiation or environment provide, can produce electric energy, solar cell can be used as long term power source, is extensive use of in artificial satellite and spaceship.
And energy density height, the long service life of isotope atomic battery have obtained suitable research and development in recent years.Nuclear-isotope battery of a great variety has primary isotope battery, thermoelectric conversion isotope battery, thermionic emission isotope battery, PN junction isotope battery etc.Wherein, thermoelectric conversion isotope battery is most widely used, and China also develops the thermoelectricity conversion isotope battery sample of hundred milliwatt levels voluntarily, but the safety in utilization of product and miniaturization are subject matter.
PN junction isotope battery and solar cell are closely similar, only in the PN junction isotope battery with α or (with) the β particle replaces sunlight as the energy.The PN junction radioisotope micro battery is mainly used in the MEMS (micro electro mechanical system), generally adopts the nickel-63 isotope radiation source to human body safety, and the power of nw magnitude is provided, and does not also have the product of typing to occur at present.The advantage of solar cell is that the transformation efficiency high-output power is big, but can't be under the environment of dark use for a long time, the isotope battery advantage is to use environment unrestricted, but power output is lower.By retrieval, about the micro cell patent documentation that isotope generates electricity and solar power generation unites two into one was not found.
The present invention is in conjunction with isotope generating and two kinds of mechanism of power generation of solar power generation, proposes a kind of composite structuredly, makes the widespread adoption in micro electronmechanical field of isotope battery become possibility.
Summary of the invention
The object of the present invention is to provide a kind of gallium nitride solar isotope composite micro battery and preparation method thereof, two back-to-back PN junctions of growth on sapphire substrates, realize the generating of solar energy and isotope energy respectively, solving traditional micro cell or to be subjected to environmental limitations, or problem such as transformation efficiency and power output be on the low side.
The objective of the invention is to realize by the following technical programs:
A kind of gallium nitride solar isotope composite micro battery of the present invention, its structure is:
Optical anti-reflective film/sapphire substrate/P type GaN epitaxially grown layer/N type GaN epitaxially grown layer/P type GaN epitaxially grown layer/isotope emitting layer.
Wherein: optical anti-reflective film is 0.2 μ mSiO 2Film is used to strengthen the permeability of sunlight royal purple composition;
The thickness of sapphire substrate is 0.1-1mm, twin polishing;
The thickness of internal layer P type GaN epitaxially grown layer is 0.3-0.5 μ m, and doping content is 10 16-17Cm -1Si;
The thickness of N type GaN epitaxially grown layer is 2-5 μ m, and doping content is 10 18-19Cm -1Mg;
The thickness of outer P type GaN epitaxially grown layer is 0.2-0.5 μ m, and doping content is 10 16-17Cm -1Si;
Isotope radioactivity layer is 63The Ni metal, adopting the thickness of the method that is coated with is 1-2 μ m, adopting the thickness of fastening is 20-100 μ m.
The manufacture method of a kind of gallium nitride solar isotope composite micro battery of the present invention, concrete steps are as follows:
1) with the sapphire being substrate, adopting radio frequency magnetron reactive sputtering preparation technology, is the SiO of 0.2 μ m at one side plating thickness 2Optical anti-reflective film.Because sapphire has light transmission preferably in the 0.20-5.50 mu m waveband, this thickness helps the permeability of royal purple composition;
2) then substrate is cleaned, handled 20 minutes under the following 900 ℃ of temperature of hydrogen environment, utilize the meteorological precipitation of metal organic-matter chemical (MOCVD) technology at the substrate opposite side, according to 10 16-19Cm -1Doping content grow successively the internal layer P type GaN epitaxially grown layer of 0.3-0.5 μ m, the N type GaN epitaxially grown layer of 2-5 μ m, the outer P type GaN epitaxially grown layer of 0.2-0.5 μ m, form two PN junctions back-to-back;
Wherein, Ga, the N of N type GaN epitaxially grown layer and Si source are respectively TMGa (Trimethylgallium), NH 3And SiH 4, flow is respectively 30Sccm, 5000Sccm and 100-180Sccm; Ga, N and the Mg source of P type GaN epitaxially grown layer are respectively TMGa, NH 3And Cp2Mg (bicyclopentadienylymagnesium), flow is respectively 15,4000 and 200-260Sccm; Reative cell pressure is 100T during growth;
3) adopting is electroplating technology, is coated with the isotope that thickness is 1-2 μ m on outer P type GaN epitaxially grown layer 63The Ni metal, or adopt fastening on outer P type GaN epitaxially grown layer, be that 20-100 μ m is solid-state with thickness 63The Ni sheet metal is anchored on semiconductor material surface;
4) be coated with the space at two P types and N type zone etching motor, carry out being coated with and line ball technology of electrode then, with the positive source of two p type island region electrodes parallel connection as composite micro battery, N type electrode is as the power cathode of composite micro battery.
Beneficial effect:
The essence of this composite battery is the shared N type district of solar energy PN junction transformational structure and isotope PN junction energy converting structure, realizes the conversion of two kinds of multi-form energy on same semiconductor slice, thin piece simultaneously.This complex type solar radioisotope micro battery does not need the external world that energy is provided, and the output of electric energy can be provided in any environment, and having overcome solar cell only has the limitation that electric energy just can be provided under the illumination; Overcome the little limitation of power output of isotope battery simultaneously, under the illumination condition, power output of the present invention improves more than 10 times than same radioisotope micro battery power output of making parameter.The present invention is integrated with radioisotope micro battery and solar cell, makes isotope battery become possibility in the widespread adoption in micro electronmechanical field.
Description of drawings
Fig. 1 is the structural representation of the nitride type compound gallium solar isotope micro cell of the present invention's proposition;
1-optical anti-reflective film wherein, 2-sapphire substrate, 3-P type GaN epitaxially grown layer, 4-N type GaN epitaxially grown layer, 5-P type GaN epitaxially grown layer, 6-isotope radioactive source; 7-solar energy positive pole, the shared negative pole of 8-, 9-isotope radiant positive pole.
Embodiment
The structure of complex type solar radioisotope micro battery of the present invention is:
Optical anti-reflective film/sapphire substrate/P type GaN epitaxially grown layer/N type GaN epitaxially grown layer/P type GaN epitaxially grown layer/isotope emitting layer.
The manufacture method of complex type solar radioisotope micro battery of the present invention is as follows:
1) with the sapphire being substrate, adopting radio frequency magnetron reactive sputtering preparation technology, is the SiO of 0.2 μ m at one side plating thickness 2Optical anti-reflective film.
2) then substrate is cleaned, handled 20 minutes under the 9000C temperature under the hydrogen environment, utilize the meteorological precipitation of metal organic-matter chemical (MOCVD) technology at the substrate opposite side, according to 10 16-19Cm -1Doping content grow successively the internal layer P type GaN epitaxially grown layer of 0.5 μ m, the N type GaN epitaxially grown layer of 5 μ m, the outer P type GaN epitaxially grown layer of 0.5 μ m, form two PN junctions back-to-back.
Wherein, Ga, the N of N type GaN epitaxially grown layer and Si source are respectively TMGa (Trimethylgallium), NH 3And SiH 4, flow is respectively 30Sccm, 5000Sccm and 100Sccm; Ga, N and the Mg source of P type GaN epitaxially grown layer are respectively TMGa, NH 3And Cp2Mg (bicyclopentadienylymagnesium), flow is respectively 15,4000 and 260Sccm; Reative cell pressure is 100T during growth.
3) adopting is electroplating technology, is coated with the isotope that thickness is 2 μ m on outer P type GaN epitaxially grown layer 63The Ni metal, or adopt fastening on outer P type GaN epitaxially grown layer, be the solid-state of 20 μ m with thickness 63The Ni sheet metal is anchored on semiconductor material surface.
4) be coated with the space in two P types and N type zone etching motor, carry out being coated with and line ball technology of electrode then, in parallel and N type electrode is together as the output electrode of composite micro battery with two p type island region electrodes, and wherein the P region electrode is the composite power supply positive pole, and N type electrode is a power cathode.
Identical with above-mentioned instance parameter, but do not adopt the radioisotope micro battery of solar energy collecting structure to be output as 20nw, and of the present invention composite structured after, the micro cell power output is 230nw, power improves 10.5 times.

Claims (3)

1. gallium nitride solar isotope composite micro battery is characterized in that structure is:
Optical anti-reflective film/sapphire substrate/P type GaN epitaxially grown layer/N type GaN epitaxially grown layer/P type GaN epitaxially grown layer/isotope emitting layer;
Wherein: optical anti-reflective film is the SiO of 0.2 μ m 2Film;
The thickness of sapphire substrate is 0.1-1mm, twin polishing;
The thickness of internal layer P type GaN epitaxially grown layer is 0.3-0.5 μ m, and doping content is 10 16-17Cm -1Si;
The thickness of N type GaN epitaxially grown layer is 2-5 μ m, and doping content is 10 18-19Cm -1Mg;
The thickness of outer P type GaN epitaxially grown layer is 0.2-0.5 μ m, and doping content is 10 16-17Cm -1Si;
Isotope radioactivity layer is 63The Ni metal, adopting the thickness of the method that is coated with is 1-2 μ m, adopting the thickness of fastening is 20-100 μ m.
2. the manufacture method of a gallium nitride solar isotope composite micro battery is characterized in that concrete steps are as follows:
1) with the sapphire being substrate, adopting radio frequency magnetron reactive sputtering preparation technology, is the SiO of 0.2 μ m at one side plating thickness 2Optical anti-reflective film;
2) then substrate is cleaned, handled 20 minutes under the following 900 ℃ of temperature of hydrogen environment, utilize the meteorological depositing technology of metal organic-matter chemical at the substrate opposite side, according to 10 16-19Cm -1Doping content grow successively the internal layer P type GaN epitaxially grown layer of 0.3-0.5 μ m, the N type GaN epitaxially grown layer of 2-5 μ m, the outer P type GaN epitaxially grown layer of 0.2-0.5 μ m, form two PN junctions back-to-back;
3) adopting is electroplating technology, is coated with the isotope that thickness is 1-2 μ m on outer P type GaN epitaxially grown layer 63The Ni metal, or adopt fastening on outer P type GaN epitaxially grown layer, be that 20-100 μ m is solid-state with thickness 63The Ni sheet metal is anchored on semiconductor material surface;
4) be coated with the space at two P types and N type zone etching motor, carry out being coated with and line ball technology of electrode then, with the positive source of two p type island region electrodes parallel connection as composite micro battery, N type electrode is as the power cathode of composite micro battery.
3. the manufacture method of a kind of gallium nitride solar isotope composite micro battery as claimed in claim 2, it is characterized in that: Ga, N and the Si source of N type GaN epitaxially grown layer are respectively TMGa, NH 3And SiH 4, flow is respectively 30Sccm, 5000Sccm and 100-180Sccm; Ga, N and the Mg source of P type GaN epitaxially grown layer are respectively TMGa, NH 3And Cp2Mg, flow is respectively 15,4000 and 200-260Sccm; Reative cell pressure is 100T during growth.
CN200910082827A 2009-04-22 2009-04-22 Gallium nitride solar isotope composite micro battery and manufacture method thereof Pending CN101521240A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097148A (en) * 2010-11-03 2011-06-15 北京理工大学 Gallium-arsenide-based multi-junction isotope micro cells
CN102306511A (en) * 2011-08-31 2012-01-04 北京理工大学 Composite isotopic battery with high output energy and preparation method thereof
CN104966541A (en) * 2015-06-17 2015-10-07 上海理工大学 Radioactivity photoelectric conversion cell
CN105006265A (en) * 2015-06-17 2015-10-28 上海理工大学 Radioactive photoelectric conversion cell

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097148A (en) * 2010-11-03 2011-06-15 北京理工大学 Gallium-arsenide-based multi-junction isotope micro cells
CN102097148B (en) * 2010-11-03 2013-03-13 北京理工大学 Gallium-arsenide-based multi-junction isotope micro cells
CN102306511A (en) * 2011-08-31 2012-01-04 北京理工大学 Composite isotopic battery with high output energy and preparation method thereof
CN102306511B (en) * 2011-08-31 2013-07-31 北京理工大学 Composite isotopic battery with high output energy and preparation method thereof
CN104966541A (en) * 2015-06-17 2015-10-07 上海理工大学 Radioactivity photoelectric conversion cell
CN105006265A (en) * 2015-06-17 2015-10-28 上海理工大学 Radioactive photoelectric conversion cell

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