CN101510051B - Inspection method and equipment, photolithography equipment and method for manufacturing photolithography processing unit and device - Google Patents
Inspection method and equipment, photolithography equipment and method for manufacturing photolithography processing unit and device Download PDFInfo
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- CN101510051B CN101510051B CN2008100090996A CN200810009099A CN101510051B CN 101510051 B CN101510051 B CN 101510051B CN 2008100090996 A CN2008100090996 A CN 2008100090996A CN 200810009099 A CN200810009099 A CN 200810009099A CN 101510051 B CN101510051 B CN 101510051B
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Abstract
A scatterometer is provided with a radiation source which can be emitted and radiated within different first and second wavelength scopes. An adjustable optical element setting is used for realizing the color aberration amendment according to the need of used wavelength scope. A single-scattering instrument can thus adopt a wavelength with wide intervals for realizing measurement.
Description
Technical field
The present invention relates to a kind of for example can be used for is making the method for checking in the device through photoetching technique, and relates to a kind of method, especially scatterometer method that adopts photoetching technique to make device.
Background technology
Lithographic equipment is a kind of machine that (is applied to usually on the target part of said substrate) on the substrate that required pattern is applied to.For example, can lithographic equipment be used in the manufacturing of integrated circuit (IC).In this case, can the pattern apparatus for converting that be called mask or mask (reticle) alternatively be used to be created on circuit pattern to be formed on the individual layer of said IC.Can this design transfer be arrived on the target part (part that for example, comprises a part of tube core, one or more tube cores) on the substrate (for example, silicon wafer).Typically, via forming images said design transfer on the radiation-sensitive materials that is provided with on the said substrate (resist) layer.Usually, single substrate will comprise the network of the adjacent target part of continuous formation pattern.Known lithographic equipment comprises: so-called stepper, in said stepper, through exposing an entire pattern onto said target each the target part of radiation of partly coming up; And so-called scanner, in said scanner, through radiation beam along assigned direction (" scanning " direction) scan said pattern, simultaneously scan said substrate with this direction comes each target part of radiation parallel or antiparallelly.Can also said pattern be transferred on the said substrate from said pattern apparatus for converting through said pattern is impressed (imprinting) to said substrate.
For monitoring photoetching technology, usually measure one or more parameters of the substrate that is patterned, for example, in substrate or the aliasing error between the successive layers that forms on the substrate.Have the various technology that the micromechanism that photoetching process forms is measured of being used for, said technology comprises uses scanning electron microscope and various professional tool.A kind of professional inspection instrument of form is a scatterometer, and in said scatterometer, radiation beam is directed on the lip-deep target of substrate, and one or more attributes of the bundle of process scattering or reflection are measured.Through comparing with afterwards one or more attributes before by substrate reflection or scattering, can confirm one or more attributes of said substrate for said bundle.This can be for example accomplishes through reflecting bundle and data in being stored in the known measured value storehouse that is associated with known substrate attribute are compared.The scatterometer of two kinds of main types is known.The spectral dispersion appearance is directed to the broadband radiation bundle on the substrate, and measures the radiation spectrum be dispersed into specific narrow angular range (as the intensity of the function of wavelength).Angle decomposition scatter is measured the intensity of the radiation that is scattered as the function of angle.Ellipsometer is measured polarization state.Angle decomposition scatter and ellipsometer can adopt homogeneous beam, multicolour light beam (light beam that promptly has the composition of a plurality of different wavelengths) or broad band light beam.
It is achromatic adopting broadband or multicolour light beam need make the optical system of scatterometer.It is known being used to make the achromatic technology of the optical system that relates to refraction optical element, but along with the increase of the quantity or the scope of wavelength to be adapted to, it is more complicated and difficult that said technology becomes.Can more easily make employing is achromatic based on the optical system of the catoptron of Schwartz Xi Er (Schwarzschild) optical element for example; But because blocking on the pupil plane; Said optical system is inapplicable, especially for the scatterometer and the ellipsometer of the optical system with high-NA.
Summary of the invention
Be intended to for example provide a kind of wavelength of wide interval or method and apparatus of the scatterometer that wavelength coverage is measured of can adopting more.
According to an aspect of the present invention, a kind of inspection machine is provided, said inspection machine configuration is used for confirming and through being used for being printed in the photoetching process of making device layer on the substrate value of the parameter correlation of the target pattern on the substrate, said equipment comprises:
Radiation source is provided for launching selectively first radiation beam with first wavelength in first wavelength coverage, perhaps has second radiation beam of second wavelength in second wavelength coverage, and said second wavelength coverage is different from said first wavelength coverage;
Optical system; One that is provided for being selected in first or second radiation beam is directed on the target pattern, and will by the tomographic projection of target pattern break-in to the detecting device to obtain the spectrum (scatterometric spectra) of scatterometer spectrum or scatterometry; And
Adjustable optical element, being provided for launching first radiation beam according to radiation source selectively still is second radiation beam, realizes the aberration correction of optical system.
According to an aspect of the present invention, provide a kind of be used for confirming with through being used for being printed on the method for inspection of value of the parameter correlation of the target pattern on the substrate in the photoetching process of making device layer on the substrate, said method comprises:
The control radiation source is launched first radiation beam with first wavelength in first wavelength coverage selectively, perhaps has second radiation beam of second wavelength in second wavelength coverage, and said second wavelength coverage is different from said first wavelength coverage;
Adopt optical system that one that selects in first radiation beam or second radiation beam is directed on the target pattern, and will be by the tomographic projection of target pattern break-in to detecting device, to obtain the spectrum of scatterometer spectrum or scatterometry; And
Adjusting adjustable optical element still is the aberration correction that second radiation beam is realized optical system selectively to launch first radiation beam according to radiation source.
According to an aspect of the present invention, a kind of inspection machine is provided, said inspection machine configuration is used for confirming and through being used for being printed in the photoetching process of making device layer on the substrate value of the parameter correlation of the target pattern on the substrate, said equipment comprises:
Optical system; Be provided for to have first radiation beam of first wavelength in first wavelength coverage; Second radiation beam that perhaps has second wavelength in second wavelength coverage is directed on the target pattern; And will by the tomographic projection of target pattern break-in to the detecting device to obtain the spectrum of scatterometer spectrum or scatterometry, said second wavelength coverage is different from said first wavelength coverage, said optical system comprises object lens and imaging optical system; Said object lens have pupil plane and are provided for revising by the radiation of target pattern break-in, and said imaging optical system is provided for image projection with pupil plane to detecting device; And
Adjustable optical element is provided for selectively realizing the aberration correction of said optical system according to being that first radiation beam or second radiation beam are guided by optical system.
Wherein said first wavelength coverage is 5 to 300nm.
Wherein said second wavelength coverage is 400 to 800nm.
Description of drawings
, embodiments of the invention are described with reference to accompanying schematic figure only by example at this, in accompanying schematic figure, identical Reference numeral is represented identical part, and wherein:
Fig. 1 a illustrates lithographic equipment;
Fig. 1 b illustrate lithographic cell or bunch;
Fig. 2 illustrates first scatterometer according to an embodiment of the invention;
Fig. 3 illustrates second scatterometer according to an embodiment of the invention;
Fig. 4 illustrates the 3rd scatterometer according to an embodiment of the invention; And
Fig. 5 illustrates the 4th scatterometer according to an embodiment of the invention.
Embodiment
The schematically illustrated lithographic equipment according to an embodiment of the invention of Fig. 1.Said equipment comprises:
Irradiation system (irradiator) IL, configuration is used to regulate radiation beam B (for example, UV radiation or deep ultraviolet (DUV) radiation);
Supporting construction (for example mask platform) MT, configuration is used to support pattern apparatus for converting (for example mask) MA and is used for accurately locating the first steady arm PM that pattern forms device according to the parameter of confirming with configuration and links to each other;
Substrate table (for example wafer station) WT, configuration is used to keep substrate (for example being coated with the wafer of resist) W, and with configuration be used for according to the parameter of confirming accurately the second steady arm PW of position substrate link to each other; And
Optical projection system (for example refraction type projection lens system) PS, said optical projection system PS configuration is used for given the target portion C of the graphic pattern projection of radiation beam B to substrate W (for example comprising or many tube cores) by pattern apparatus for converting MA.
Said irradiation system can comprise various types of opticses; The combination in any of the optics of refractive, reflection-type, magnetic type, electromagnetic type, electrostatic or other types or above-mentioned optics for example is with to radiation channeling conduct, shaping or control.
Supporting construction keeps the pattern apparatus for converting with the design of the orientation that depends on the pattern apparatus for converting, lithographic equipment and such as the mode whether for example pattern apparatus for converting remains on medium other conditions of vacuum environment.Said supporting construction can adopt machinery, vacuum, static or other clamping technology keep the pattern apparatus for converting.Said supporting construction can be framework or platform, for example, framework or platform can be as required for fixing or movably.Said supporting construction can guarantee that pattern apparatus for converting (for example with respect to optical projection system) is positioned on the desired position.Any use of term " mask " or " mask " here can be thought and more upper term " pattern apparatus for converting " synonym.
Here employed term " pattern apparatus for converting " should be interpreted as widely that expression can be used in and on the xsect of radiation beam, be given radiation beam so that partly form any device of pattern in the target of substrate with pattern.Should be noted that the pattern that is endowed radiation beam can with at the required pattern of substrate target part definitely not conform to (if for example this pattern comprises phase shift characteristic or so-called supplemental characteristic).Usually, the pattern that is endowed radiation beam will conform to the particular functionality layer in the device that target partly forms such as integrated circuit.
The pattern apparatus for converting can be transmission-type or reflective.The example of pattern apparatus for converting comprises mask, array of programmable mirrors and liquid crystal display able to programme (LCD) panel.Mask is known in photoetching, and comprises the mask-type such as binary mask type, alternating phase-shift mask type, attenuated phase-shifting mask type and various hybrid mask types.The example of array of programmable mirrors adopts the matrix arrangements of small reflector, and each small reflector that can tilt independently is so that along the radiation beam of different directions reflection incident.The said catoptron that tilts gives pattern by said catoptron matrix radiation reflected bundle.
Should term used herein " optical projection system " be interpreted as the optical projection system that comprises any type that is suitable for other factors employed exposing radiation or such as using immersion liquid or use vacuum widely, comprise the combination in any of refractive, reflection-type, reflection-refraction type, magnetic type, electromagnetic type and electrostatic optical systems or said system.Here any use of term " projecting lens " can be thought and more upper term " optical projection system " synonym.
As shown in here, said equipment is transmission-type (for example, adopting transmissive mask).Alternatively, said equipment can be reflection-type (for example, adopt the array of programmable mirrors of type as stated, or adopt reflection type mask).
Said lithographic equipment can be the type with two (two platforms) or more substrate tables (and/or two or more supporting construction).In this " many " machine, can use additional platform and/or supporting construction concurrently, or can be with one or more other and/or when supporting construction is used to make public, on one or more and/or supporting construction, carry out preliminary step.
Described lithographic equipment also can be that wherein at least a portion substrate can be had relative high refractive index liquid (for example water) covering so that fill the type in the space between optical projection system and the substrate.Immersion liquid also can be applied to (for example between said mask and optical projection system) in other spaces in the lithographic equipment.The numerical aperture that immersion technique is used to increase optical projection system is being known in the art.Here employed this term " submergence " does not also mean that structure (for example substrate) must be immersed in the liquid, and only means that in exposure process liquid is between optical projection system and substrate.
With reference to Fig. 1 a, said irradiator IL receives the radiation beam that sends from radiation source S O.This source and said lithographic equipment can be individual entities (for example when this source are excimer laser).In this case, can this source be considered to the ingredient that forms lithographic equipment, and the help of the bundle transmission system BD through comprising suitable guide catoptron for example and/or beam expander, said radiation beam is passed to said irradiator IL from said source SO.In other cases, said source can be the ingredient or the integral part (for example when said source is mercury lamp) of said lithographic equipment.Can said source SO and said irradiator IL and said bundle transmission system BD (said if desired bundle transmission system BD) be called radiating system together.
Said irradiator IL can comprise the adjuster AD of the angle intensity distributions that is used to adjust said radiation beam.Usually, can adjust outside at least and/or inner radially (radial) scope (generally being called σ-outside and σ-inside respectively) of the intensity distributions in the pupil plane of said irradiator.In addition, said irradiator IL can comprise various miscellaneous parts, for example integrator IN and condenser CO.Can said irradiator be used to regulate said radiation beam, in its xsect, to have required homogeneity and intensity distributions.
It is last that said radiation beam B incides said pattern apparatus for converting (for example, the mask) MA that remains on supporting construction (for example, mask platform) MT, and form pattern through said pattern apparatus for converting.Passed after the pattern apparatus for converting MA, said radiation beam B is through optical projection system PS, and said optical projection system PS focuses on radiation beam on the target portion C of said substrate W.Through the second steady arm PW and position transducer IF (for example; Interferometry device, linear encoder or capacitive transducer) help; Can accurately move said substrate table WT, for example so that the different target portion C is positioned in the radiation path of said radiation beam B.Similarly; For example the machinery from the mask storehouse obtain or machine searching after; Or in scan period, the said first steady arm PM can be used for pattern apparatus for converting MA is accurately located with respect to the radiation path of said radiation beam B with another position transducer (clearly not illustrating among Fig. 1 a).The long-range module (coarse positioning) of a part that usually, can be through forming the said first steady arm PM and the help of short distance module (fine positioning) realize that supporting construction MT's is mobile.Similarly, can adopt the long-range module of a part that forms the said second steady arm PW and short distance module to realize moving of said substrate table WT.Under the situation of stepper (opposite with scanner), said supporting construction MT can only link to each other with the short distance actuator, maybe can fix.Can use pattern apparatus for converting alignment mark M1, M2 and substrate alignment marks P1, P2 to come alignment pattern to form device MA and substrate W.Although shown substrate alignment marks has occupied the application-specific target part, they can be in the space between the target part (these are known as the line alignment mark).Similarly, under the situation that will be arranged on more than one tube core on the pattern apparatus for converting MA, said pattern apparatus for converting alignment mark can be between said tube core.
Can said equipment be used at least a of following pattern:
1. in step mode, when the whole pattern that will give said radiation beam once projects on the target portion C, supporting construction MT and said substrate table WT are remained static basically (that is, single static exposure).Then said substrate table WT is moved along X and/or Y direction, make and to make public to the different target portion C.In step mode, the full-size of exposure field has limited the size of the said target portion C that in single static exposure, forms images.
2. in scan pattern, when the graphic pattern projection that will give said radiation beam is on the target portion C, supporting construction MT and substrate table WT are synchronously scanned (that is, single dynamic exposure).Substrate table WT can confirm through (dwindling) magnification and the image inversion characteristic of said optical projection system PS with respect to speed and the direction of supporting construction MT.In scan pattern; The full-size of exposure field has limited the width (along the width of non-direction of scanning) of the said target part in the single dynamic exposure, and the length of said scanning motion has been confirmed the height (along the height of said direction of scanning) of said target part.
3. in another pattern, the supporting construction MT that keeps pattern apparatus for converting able to programme is remained basic stationary state, and when the graphic pattern projection that will give said radiation beam is on the target portion C, said substrate table WT is moved or scans.In this pattern, adopt impulse radiation source usually, and after the moving each time of said substrate table WT or between the continuous radiation pulse in scan period, upgrade said pattern apparatus for converting able to programme as required.This operator scheme can be easy to be applied to utilize in the maskless lithography of pattern apparatus for converting able to programme (for example, the array of programmable mirrors of type) as stated.
Also can adopt the combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
Shown in Fig. 1 b, lithographic equipment LA forms the part of lithographic cell LC (be also referred to as sometimes photoetching bunch), said lithographic cell also comprise be used on substrate, realizing before one or more exposures with exposure after the device of technology.Usually, these comprise one or more spinner SC of being used for the deposit resist layer, are used for one or more developer DE that the resist that made public is developed, one or more chill plate CH and one or more bake plate BK.Lining processor or mechanical arm RO pick up substrate from I/O port I/O1, I/O2, it is moved between the different processes device, and it is passed to the loading bay LB of lithographic equipment.These devices that often are referred to as track (track) are under the control of track control module TCU; Said track control module TCU self is by management control system SCS control, and said management control system SCS is also via photoetching control module LACU control lithographic equipment.Therefore, different equipment can be used for turnout and treatment effeciency maximization by operation.
For by the substrate of lithographic equipment exposure by correctly and exposure as one man, need check through the substrate of overexposure to measure one or more attributes, the for example aliasing error between two successive layerss, line thickness, critical dimension (CD) etc.If the error of detecting can be adjusted (if especially check can be accomplished or enough rapid still being in to another substrate that makes same batch treated exposure status at once) to the exposure of one or more continuous substrates.The substrate that had made public also can be stripped from and rework (so that improve output), or abandoned, avoids thus on the known substrate that has a defective, making public.Partly exist under the situation of defective in some targets of substrate only, can only partly further make public those intact targets.Another kind possibly be to set continuous processing step, and with the needs of adaptive compensation error, the time of for example repairing etch step can be used to compensate the variation to the critical dimension of substrate of the substrate that caused by lithographic process steps by adjustment.
Inspection machine is used to confirm one or more attributes of substrate, and especially, be used for confirming different substrates or same substrate different layers one or more attributes how from the layer to the layer and/or from one side of substrate to the variation of another side.Inspection machine can be integrated among lithographic equipment LA or the lithographic cell LC, maybe can be independent device.In order the most promptly to measure, need inspection machine upright measurement the after the exposure at one or more attributes on the resist layer of overexposure.Yet; Latent image in the resist have very low contrast (through the resist of radiant exposure part and between the resist part through radiant exposure very little refringence is only arranged), and be not that all inspection machines all have enough sensitivity and come latent image is effectively measured.Therefore; Measurement can be carried out behind the baking procedure after the exposure (PEB); Baking procedure after the said exposure (PEB) is normally at the first step that on the substrate of overexposure, carries out, and increased resist through overexposure with without the contrast between the part of exposure.In this stage, it is half potential that the image in the resist can be called as.Also can be in the exposed portion of resist or non-exposed portion removed moment, perhaps after such as pattern transfer steps such as etchings, to measuring through the resist image that develops.A kind of possibility of processing again that possibly limit defective substrate in back, but still Useful Information can be provided, for example from purpose of process control.
Fig. 2 illustrates scatterometer SM1 according to an embodiment of the invention.It comprises broadband (white light) the tomographic projection device 2 of tomographic projection to the substrate W.Institute's radiation reflected is transferred to spectrometer detector 4, and said spectrometer detector 4 is measured by the spectrum 10 of the radiation of direct reflection (being about to the function measurement of intensity as wavelength).From these data; Produce the structure of the spectrum detected or distribute and can rebuild through processing unit PU, for example through rigorous couple-wave analysis (rigorous coupled waveanalysis) and non-linear regression or through with bottom Fig. 2 shown in the simulated spectra storehouse compare.Usually, for said reconstruction, know the cardinal principle form of said structure and, only leave some structural parameters and confirm according to scatterometry data (scatterometry data) according to some parameters of knowledge supposition of the manufacture craft of said structure.This scatterometer can be configured to normal incidence scatterometer or oblique incidence scatterometer.
According to embodiments of the invention, radiation source 2 can be controlled and be used for at least two kinds of different wavelengths scope output radiations selectively, for example in ultraviolet range (less than 300nm) and near infrared range (700-800nm).Radiation source 2 can comprise first radiation source that is used for the emitted in ultraviolet radiation, for example deuterium lamp or xenon lamp.Therefore, can be to the scope of about 300nm at about 200nm by first wavelength coverage of said radiation source output.Radiation source 2 also can comprise second radiation source, for example quartz-tungsten halogen (quartz-tungsten-halogen) radiation source or laser, and perhaps laser diode is with the emission near-infrared radiation.Can be in scope from about 700nm to about 800nm by second wavelength coverage of radiation source output.For said first and second radiation sources, one or more wave filters can be set for the wavelength coverage of being launched is restricted in the needed scope.In order to export the radiation in first and second wavelength coverages, excite first and second radiation sources selectively.Alternatively, two provenances can be excited the shutter with separately to open and close simultaneously, perhaps move the bundle steering component, from required radiation source, to select output.If different wavelengths scope to be used is enough near, then also can adopt single tunable radiation source.In order to make it possible between more than two wavelength coverage, to select, can provide more than two selectable radiation sources and/or tunable radiation source.
Radiation in ultraviolet range is useful for measuring CD; Owing to the improvement of obtainable CD value along with photoetching technique diminishes, need shorter wavelength accurately to measure.Radiation near infrared range is useful for the overlapping measurement in the layer of polysilicon or similar polysilicon.Other wavelength coverage possibly be particularly useful for other measurement.Through provide can be in two or more different scopes radiation emitted source selectively, can in single scatterometer, carry out different measurement (for example CD and overlapping).Owing to can on substrate, carry out multiple measurement, and need be between scatterometer translate substrate, so this has reduced the quantity of the scatterometer that work in-process provided, and increase turnout.
Scatterometer SM1 optical system (not shown) need be adapted to different wavelengths scope to be used.Therefore, adaptive optical element AE1 is set at the suitable position in the optical system of scatterometer, and when selecting the different wavelengths scope, under the control of control module CU, carries out essential correction.Adjustable element AE1 can take various form.For example, it can comprise controllably deformable catoptron, controllably deformable lens element, movably lens element, a plurality of lens element, and said relative positions can and/or can be removable lens element by adjustment.
Another scatterometer SM2 is as shown in Figure 3 according to an embodiment of the invention.In this device; Radiation by radiation source 2 sends adopts lens combination 12 to be focused through interference filter 13 and polarizer 17, focuses on the substrate W by 16 reflections of partial reflection surface and via the micro objective 15 with high-NA (NA) (hoping at least 0.9 or at least 0.95).Immersion scatterometer even can have surpasses the lens of 1 numerical aperture.Then, institute's radiation reflected is transmitted into detecting device 18 through partial reflection surface 16, so that detect scattering spectrum.Detecting device can be located on the back projection pupil plane 11 at focal length place of lens 15, yet pupil plane can be alternatively with the imaging once more on detecting device 18 of auxiliary optical element (not shown).Said pupil plane is that the radial position of radiation above that limits incident angle and azimuthal plane of position, angle qualification radiation.Said detecting device hopes it is two-dimensional detector, so that can measure the bidimensional angle scattering spectrum intensity measurements of the function of scattering angle (promptly as) of substrate target.Detecting device 18 can be for example charge-coupled device (CCD) or complementary metal oxide semiconductor (CMOS) (CMOS) sensor, and can have the integral time of 40 milliseconds of for example every frames.
Reference is often used in the intensity of for example measuring incident radiation.For this reason, when radiation beam incides 16 last times of partial reflection surface, the part of radiation beam is through Shu Chaoxiang reference mirror 14 transmissions as a reference of said surface.Then, said reference is projected on the different piece of same detecting device 18.
One or more interference filters 13 be used in as 405-790nm or even the scope of lower for example 200-300nm in select interested wavelength.Interference filter can be tunable rather than comprise a different set of optical filter.Replace one or more interference filters, can use grating, or except one or more interference filters, also can use grating.
Detecting device 18 can be measured the intensity of the radiation that is scattered of single wavelength (or narrow wavelength coverage), independent intensity at a plurality of wavelength, perhaps all-in-one-piece intensity on wavelength coverage.And then detecting device can be measured the intensity and/or the phase differential between transverse magnetic polarized radiation and transverse electric polarized radiation of transverse magnetic (TM) polarized radiation and transverse electric (TE) polarized radiation individually.
Can adopt the broadband radiation source 2 that provides big etendue (etendue) (be radiation source 2 have wide radiation frequency or wavelength coverage and be colored thus), allow the mixing of multi-wavelength.A plurality of wavelength on the broadband need the space of each bandwidth with δ λ and at least 2 δ λ (being the twice of wavelength bandwidth).A plurality of radiation " source " can be by the different piece of the expansion radiation source of cutting apart with for example fibre bundle.By this way, carrying out scattering spectra that angle decomposes can be measured on a plurality of wavelength concurrently.Can measure the three-dimensional spectrum (wavelength and two different angles) that comprises more information than two-dimensional spectrum.This allows more information measured, and this increases the robustness of metrology process.This has carried out more detailed description in the open No.US2006-0066855 of U.S. Patent application, the document integral body by reference is incorporated herein.
As about described in the described embodiment of Fig. 2, the radiation that radiation source 2 can be used to launch the selectable wavelength (or set of wavelengths) that has in first wavelength coverage or second wavelength coverage through control module CU control.According to selected scope, adjustable element AE2 Be Controlled is used to realize the essential compensation of optical system.Radiation source 2 and adjustable element AE2 can adopt and the identical form of corresponding components in the described embodiment about Fig. 2.In conjunction with the wavelength coverage of exporting through said source 2 or the selection of group, one or more wave filters 13 are by exchange or adjustment.
As shown in the figure, adjustable element AE2 is set in the measurement branch road of scatterometer SM2, that is, between sample and detecting device 18, but alternately be set in the irradiation branch road (promptly between radiation source 2 and said sample).At least two adjustable element can be provided, and for example every branch road is one.Adjustable element AE2 also can be set in the high-NA objective 15.
Scatterometer SM3 according to another embodiment of the invention is as shown in Figure 4.In this embodiment, two radiation sources 31,32 provide the have orthogonal polarization state radiation beam of (for example p and s), said radiation beam scioptics 33 and 34 to be focused forming empty radiation source, and combine through polarization beam apparatus 35.As stated, each radiation source may command is used to be transmitted in the radiation in first or second wavelength coverage.Orifice plate 20 can be provided with one or more holes, is used for said irradiation beam is shaped as for example conventional, ring-type and/or multipole irradiation beam.Selection mechanism 23, motor for example can be used to select in a plurality of holes of said plate.
Scatterometer SM4 according to another embodiment of the invention is as shown in Figure 5.This scatterometer is identical with above-mentioned scatterometer SM3 major part, and therefore the description of common unit is omitted.
Substitute deformable catoptron 38, scatterometer SM4 has simple folding mirror 38a, and said folding mirror 38a can be by half silver-plated (half-silvered), to connect or coupling in the irradiation that is used for the focusing system (not shown).In order to realize the essential correction of optical system according to selected wavelength coverage, two (or more a plurality of) removable objective lens 40a, 40b provide actuator 40c together, to realize the exchange of object lens.One of them each wavelength coverage for said radiation source 31,32 outputs of removable object lens (or group) is optimised.As replacement scheme, adjustable element also can be set in the object lens 40 of high-NA.
In any above-mentioned scatterometer, the grating that the target on substrate W can be printed is so that after developing, striped is formed by real resist line.Said striped can alternatively be etched into said substrate.Target pattern is selected as for parameters of interest (the for example focus in the lithographic projection apparatus, dosage, overlapping, aberration etc.) sensitivity, so that the variation of correlation parameter will be expressed as the variation of the target of being printed.For example, target pattern can be responsive to the aberration in the lithographic projection apparatus especially optical projection system PL, and the existence of illumination symmetry (illumination symmetry) and this aberration is with the variation that self is expressed as the target pattern of being printed.The scatterometry data of the target pattern of correspondingly, being printed are used to rebuild said target pattern.The parameter of said target pattern (for example live width and linear) can be imported in the process of reconstruction, and said process of reconstruction is realized according to the knowledge of printing step and/or other scatterometry programs (scatterometry processes) by processing unit PU.
There are two kinds of basic skills that are used for confirming the parameters of interest value (for example CD) of target: iteration modeling and library searching according to the data (being called spectrum) that obtain from scatterometer.In the iteration modeling technique, the theoretical model of object construction is used to calculate the spectrum as the function of parameters of interest that obtains from target.Begin with initial value or seed numerical value, the spectrum of predicting is calculated and is compared with the spectrum that measures, so that can improve the estimation of parameter value.This process repeats for iteration repeatedly; Mate in the required limit of error or scope (margin) up to spectrum of predicting and the spectrum that measures; At this point, suppose that the actual value of parameter equates with the parameter value of predicting that is used for the spectrum that acquisition is predicted in required accuracy rating.
In library searching, adopt the model that spectrum is related with parameter value once more, the library of spectra of predicting is rebuild, and the clauses and subclauses in measured spectrum quilt and storehouse compare, to confirm immediate coupling.The scope of the quantity of the clauses and subclauses in the said storehouse through desired possible parameter value confirm, the scope of said possible parameter value depends on parameter value and can be in advance how be accurately inferred and required measuring accuracy.
The another kind of technology that can be used in the scatterometry (scatterometry) is principal component analysis (PCA) (Principal Component Analysis/PCA).With this technology, the matrix of test or calibrating pattern is printed under the situation that changes the parameters of interest value.Spectrum obtains to each test pattern, and is used to release one group of major component (principal components) (basic function) by analysis, so that each spectrum can be expressed as one group of coefficient that multiplies each other with major component.Then according to the known parameter value of test pattern, can derive the function that said coefficient and said parameter value are got in touch.The spectrum that draws according to measurement target is broken down into one group of coefficient that multiplies each other with major component, and said coefficient value is used for confirming said parameter value.
In order to ensure the precision in scatterometry, need guarantee that optical system is aberrationless in the required limit.This need measure the aberration in the optical system.The conventional route of measuring the aberration in the optical system (optical system that for example is used for scatterometer) is an interferometry.Yet, the hardware that interfere measurement technique need add, and very consuming time, and be difficult on equipment just in use, realize.Correspondingly, period regulation and diagnostic monitoring carry out under the situation in long period not using one section of scatterometer.
Although in this article can be specifically with reference to the use that said lithographic equipment is used to make IC; But be to be understood that lithographic equipment described here can have other application; For example, manufacturing of the guiding of integrated optics system, magnetic domain memory and check pattern, flat-panel monitor, LCD, thin-film head etc.It should be appreciated to those skilled in the art that in the context of this alternative application, can any use of term " wafer " or " tube core " here be thought respectively and more upper term " substrate " or " target part " synonym.Here the substrate of indication can be handled before or after exposure; For example in track (track) (a kind ofly typically resist layer is coated onto on the substrate, and the instrument that the resist that has made public is developed), measurement facility and/or the instruments of inspection, handle.Under applicable situation, can disclosure herein be applied in this and other substrate processing instruments.In addition, more than said substrate can be handled once, for example, make said term substrate used herein also can represent to have comprised the substrate of a plurality of processing layers for producing multilayer IC.
Although below specifically with reference in the context of optical lithography, using embodiments of the invention, it should be understood that the present invention can be used for other and use, for example imprint lithography, and the situation of needing only allows, and is not limited to optical lithography.In imprint lithography, the profile of pattern apparatus for converting defines the pattern that on substrate, produces.Can the profile of said pattern apparatus for converting be printed in the resist layer that offers said substrate, make up said resist is solidified through applying electromagnetic radiation, heat, pressure or its above that.After said resist solidified, said pattern apparatus for converting was removed from said resist, and in resist, stays pattern.
Term used herein " radiation " and " bundle " comprise the electromagnetic radiation of all types; Comprise: UV radiation (for example have about 365,355,248,193,157 or the wavelength of 126nm) and extreme ultraviolet radiation (for example having the wavelength in the 5-20nm scope); And the particle beams, for example ion beam or electron beam.
Under the situation that situation allows, any in various types of opticses or their combination can be represented in said term " lens ", comprises refraction type, reflective, magnetic, electromagnetic type and electrostatic optics.
Although below described certain embodiments of the present invention, it should be understood that the present invention can realize with above-mentioned different form.For example; The present invention can take to comprise the form of the computer program of of describing above-mentioned disclosed method or more sequence of machine-readable instructions; Perhaps take to have the form of data storage medium (for example, semiconductor memory, disk or CD) of this computer program of storing therein.
Above description is illustrative, rather than restrictive.Therefore, it will be understood by those of skill in the art that and under the condition of the protection domain that does not deviate from appended claim, can make amendment the present invention.
Claims (17)
1. inspection machine, said inspection machine configuration are used to confirm to be printed on the value of the parameter correlation of the target pattern on the substrate, and said equipment comprises:
Radiation source is provided for launching selectively first radiation beam with first wavelength in first wavelength coverage, perhaps has second radiation beam of second wavelength in second wavelength coverage, and said second wavelength coverage is different from said first wavelength coverage;
Optical system; One that is provided for being selected in first or second radiation beam is directed on the target pattern; And will by the tomographic projection of target pattern break-in to the detecting device to obtain the spectrum of scatterometer spectrum or scatterometry, the scatterometry data of said target pattern are used to rebuild said target pattern; And
Adjustable optical element, being provided for launching first radiation beam according to radiation source selectively still is second radiation beam, realizes the aberration correction of optical system.
2. equipment according to claim 1, wherein said first wavelength coverage are 5 to 300nm.
3. equipment according to claim 1, wherein said second wavelength coverage are 400 to 800nm.
4. equipment according to claim 1, wherein said first radiation beam comprises a plurality of components or composition, wherein each component or composition have the wavelength separately in first wavelength coverage.
5. equipment according to claim 1, wherein said second radiation beam comprises a plurality of components or composition, wherein each component or composition have the wavelength separately in second wavelength coverage.
6. equipment according to claim 1, wherein said first radiation beam is the broadband radiation bundle, said broadband radiation bundle is included in the wavelength of the certain limit in first wavelength coverage.
7. equipment according to claim 1, wherein said second radiation beam is the broadband radiation bundle, said broadband radiation bundle is included in the wavelength of the certain limit in second wavelength coverage.
8. equipment according to claim 1, wherein said adjustable lay the grain are learned element and are comprised deformable mirror.
9. equipment according to claim 1, wherein said adjustable lay the grain element comprises can adjust the refractor element.
10. equipment according to claim 1; Wherein said optical system comprises irradiation branch road and detection branch; Said irradiation branch road is provided for selected of going out in first or second radiation beam is directed on the target pattern; And said detection branch be provided for by the tomographic projection of said target pattern break-in to detecting device, to obtain the spectrum of scatterometer spectrum or scatterometry, wherein said adjustable optical element is set in the irradiation branch road.
11. equipment according to claim 1; Wherein said optical system comprises irradiation branch road and detection branch; Said irradiation branch road is provided for selected of going out in first or second radiation beam is directed on the target pattern; And said detection branch be provided for by the tomographic projection of said target pattern break-in to detecting device, to obtain the spectrum of scatterometer spectrum or scatterometry, wherein said adjustable optical element is set in the detection branch.
12. equipment according to claim 1, wherein said optical system comprises objective system, and adjustable lay the grain element is set in the objective system.
13. equipment according to claim 1, wherein said adjustable lay the grain are learned element and are comprised a plurality of object lens that can in optical system, locate selectively.
14. a lithographic equipment comprises:
Illuminating optical system is provided for irradiation pattern;
Projection optical system is provided for image projection with said pattern to substrate; And
Inspection machine, the configuration of said inspection machine are used to confirm to be printed on the value of the parameter correlation of the target pattern on the substrate, and said inspection machine comprises:
Optical system; Be provided for to have first radiation beam of first wavelength in first wavelength coverage; Second radiation beam that perhaps has second wavelength in second wavelength coverage is directed on the target pattern, and will by the tomographic projection of said target pattern break-in to the detecting device to obtain the spectrum of scatterometer spectrum or scatterometry, the scatterometry data of said target pattern are used to rebuild said target pattern; Said second wavelength coverage is different from said first wavelength coverage, and
Adjustable optical element, being provided for still is that second radiation beam is guided by optical system according to first radiation beam selectively, realizes the aberration correction of said optical system.
15. a lithographic cell comprises:
Coating machine is provided for being substrate coating radiation-sensitive layer;
Lithographic equipment is provided for image exposure to the radiation-sensitive layer of the substrate that is coated with by said coating machine;
Developer is provided for being developed by the image of lithographic equipment exposure; And
Inspection machine, the configuration of said inspection machine are used to confirm to be printed on the value of the parameter correlation of the target pattern on the substrate, and said inspection machine comprises:
Radiation source is provided for launching selectively first radiation beam with first wavelength in first wavelength coverage, perhaps has second radiation beam of second wavelength in second wavelength coverage, and said second wavelength coverage is different from said first wavelength coverage;
Optical system; One that is provided for being selected in first or second radiation beam is directed on the target pattern; And will by the tomographic projection of target pattern break-in to the detecting device to obtain the spectrum of scatterometer spectrum or scatterometry, the scatterometry data of said target pattern are used to rebuild said target pattern; And
Adjustable optical element, being provided for launching first radiation beam according to radiation source selectively still is second radiation beam, realizes the aberration correction of optical system.
16. the method for inspection of the value of a parameter correlation that is used to confirm to be printed on the target pattern on the substrate, said method comprises:
The control radiation source is launched first radiation beam with first wavelength in first wavelength coverage selectively, perhaps has second radiation beam of second wavelength in second wavelength coverage, and said second wavelength coverage is different from said first wavelength coverage;
Adopt optical system that one that selects in first radiation beam or second radiation beam is directed on the target pattern; And will be to detecting device by the tomographic projection of target pattern break-in; To obtain the spectrum of scatterometer spectrum or scatterometry, the scatterometry data of said target pattern are used to rebuild said target pattern; And
Adjusting adjustable optical element, still is the aberration correction that second radiation beam is realized optical system selectively to launch first radiation beam according to radiation source.
17. an inspection machine, the configuration of said inspection machine are used to confirm to be printed on the value of the parameter correlation of the target pattern on the substrate, said equipment comprises:
Optical system; Be provided for to have first radiation beam of first wavelength in first wavelength coverage; Second radiation beam that perhaps has second wavelength in second wavelength coverage is directed on the target pattern; And will by the tomographic projection of target pattern break-in to the detecting device to obtain the spectrum of scatterometer spectrum or scatterometry; The scatterometry data of said target pattern are used to rebuild said target pattern, and said second wavelength coverage is different from said first wavelength coverage, and said optical system comprises object lens and imaging optical system; Said object lens have pupil plane and are provided for collecting by the radiation of target pattern break-in, and said imaging optical system is provided for image projection with pupil plane to detecting device; And adjustable optical element, being provided for still is that second radiation beam is guided by optical system according to first radiation beam selectively, realizes the aberration correction of said optical system.
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| CN107003447A (en) * | 2014-11-24 | 2017-08-01 | Asml荷兰有限公司 | Radiate beam device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102012205096B3 (en) * | 2012-03-29 | 2013-08-29 | Carl Zeiss Smt Gmbh | Projection exposure system with at least one manipulator |
| NL2013810A (en) | 2013-12-19 | 2015-06-22 | Asml Netherlands Bv | Inspection method and apparatus and lithographic apparatus. |
| CN111133384B (en) * | 2017-09-22 | 2022-04-15 | Asml荷兰有限公司 | Method for determining parameters of a patterning process |
| DE102017217380A1 (en) * | 2017-09-29 | 2019-04-04 | Carl Zeiss Microscopy Gmbh | Immersion device for the dynamic adaptation of a medium to a sample |
| CN110895192B (en) * | 2019-11-25 | 2021-04-16 | 中国科学院微电子研究所 | Extreme ultraviolet optical element performance parameter test system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107003447A (en) * | 2014-11-24 | 2017-08-01 | Asml荷兰有限公司 | Radiate beam device |
| CN107003447B (en) * | 2014-11-24 | 2020-03-24 | Asml荷兰有限公司 | Radiation beam apparatus |
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