CN101508416A - Single or multicomponent organic acid surface finished II-VI group of semiconductor quantum point of sulfhydryl, and method for preparing the same - Google Patents
Single or multicomponent organic acid surface finished II-VI group of semiconductor quantum point of sulfhydryl, and method for preparing the same Download PDFInfo
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Abstract
The invention relates to sulphydryl single-element or multi-element organic acid surface-modified No.2-No.6 semiconductor quantum dots and a preparation method thereof. The method comprises the following steps of preparation of a precursor solution, preparation of quantum dots, and the like. The sulphydryl single-element or multi-element organic acid surface-modified No.2-No.6 semiconductor quantum dots are the quantum dots formed by CdX (X=S, Se, Te) or ZnX (X=S, Se, Te) which is coated by sulphydryl single-element (or multi-element) organic acid, wherein the mol ratio of the sulphydryl single-element (or multi-element) organic acid to the CdX or the ZnX is between 2:1 and 3:1; and particle diameter of the quantum dots is between 2.0 and 6.0 nanometers. The invention takes gas as a tellurium (or sulfur or selenium) source, and reduces impurity compositions of the precursor solution by introducing H2X (X=S, Se, Te); and due to the superior hydrophilicity of the sulphydryl single-element (or multi-element) organic acid, the prepared No.2-No.6 semiconductor CdX (X=S, Se, Te) and ZnX (X=S, Se, Te) quantum dots,, and the like have good dispersity and wide fluorescent range, and have the quantum yield as high as more than 80 percent. Simultaneously, the quantum dots have small toxicity, good biocompatibility and easy operation, and can be used for medicament tracking, diagnostic marking, and the like.
Description
Technical field
The present invention relates to a kind of II-VI family semiconductor-quantum-point and preparation method thereof, particularly a kind of sulfydryl list or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point and preparation method thereof.
Background technology
Along with the develop rapidly of nanoscale science and technology, semiconductor nanocrystal is because its unique physics and chemical characteristic especially aspect optics and biology, demonstrate huge learning value and good commercial promise just day by day.Many in the world high-caliber periodicals such as Science (as Science 289,1757-1760 (2000) etc.) and Nature magazine have repeatedly been reported synthetic method, physicochemical characteristic and its application at aspects such as biomedicine and optoelectronic areas of relevant semiconductor nanocrystal.Set up the company of exploitation semiconductor nanocrystal biomarker fluorescence probe (as the NLNanosemiconductor of Germany the America and Europe at present, the Quantum Dot company of the U.S. etc.), and to release trade mark in calendar year 2001 be QDOTTM product (Quantum Dot company), and at present domestic also have several companies (as an ancient woman's ornament source, Wuhan quantum dot development technique Co., Ltd etc.) to be devoted to research and develop semiconductor nano fluorescence labeling thing.
Semiconductor nanocrystal is by number few atom or molecular atom or elementide.At present report that relate generally to is main group II～VI such as CdX (X=S, Se, Te) and ZnX (X=S, Se, Te) etc., III～V such as element, particularly II～VI such as InP, InAs and GaAs subgroup compound and Si and III～V subgroup compound especially cause people's attention.Because the influence that spectrum is prohibited, when the radius of these semiconductor nanocrystals during less than its Bohr radius (being generally less than 10nm), these little semiconductor nanocrystals will show special physics and chemical property, can be luminous as Si nanocrystal and porous Si, the size of crystal can influence the crystal phase structure and the fusing point of crystal.The structure of semiconductor nanocrystal has caused it to have size quantum effect and dielectric confinement effect and has derived the characteristics of luminescence of semiconductor nanocrystal uniqueness thus.When a branch of illumination was mapped on the semiconductor, the electron transition behind the semiconductor absorption photon on the valence band was to conduction band, and the electronics on conduction band transition is again got back to valence band, emits photon; Also can fall into the electron trap of semiconductor.After electronics fell into darker electron trap, overwhelming majority cancellation with radiationless form had only the electronics of only a few to return valence band with the form transition of photon or radiationless form is got back to conduction band.So when the electron trap in the semiconductor was dark, quantum yield will be lower.
The emission spectrum of semiconductor nanocrystal covers from the ultraviolet to the region of ultra-red, and seldom the emission wavelength of fluorescent dye can be more than 800nm.Be unfavorable for the biomaterial that detects in ultraviolet or visibility region for some, can utilize semiconductor nanocrystal to be marked at region of ultra-red detects, avoid the injury of ultraviolet light fully to biomaterial, be particularly conducive to the detection of living body biological material, simultaneously, the interference of fluorescence background to detection signal will be reduced significantly.Replenish or part replaces organic fluorescence labeling material with luminescent semiconductor nanocrystals, will start ultra-sensitivity, high stability and the Measurement for Biotechnique in long hair light life-span.In recent years, there is report can prepare the comparatively method of homogeneous semiconductor nanocrystal of size distribution in a large number.In addition, the nanocrystal stable performance is easy to store and transportation, is well suited for commercialization.And it is current, two kinds of preparation methods also are that high temperature organic facies method and low temperature water method all have oneself advantage alone, and the latter is a stabilizing agent with mercaptopropionic acid or TGA usually, and these finishing molecules all directly have influence on its performance, as quantum yield, water-soluble or the like.
Summary of the invention
The object of the invention is to provide a kind of sulfydryl list or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point, to improve the water-soluble and dispersing uniformity of II-VI family semiconductor-quantum-point.
Two of purpose of the present invention is to provide the preparation method of water-soluble quantum dot.
For achieving the above object, the present invention takes following technical scheme:
A kind of sulfydryl list or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point, it is characterized in that this quantum dot is with sulfydryl list or multicomponent organic acid parcel CdX or ZnX, X=S, Se, Te and the quantum dot that forms, wherein the mol ratio of sulfydryl list or multicomponent organic acid and CdX or ZnX is (1.5～3): 1; The particle diameter of quantum dot is 2.0～6.0nm.
Above-mentioned sulfydryl unit organic acid has: TGA, mercaptopropionic acid, sulfydryl butyric acid, sulfydryl valeric acid, dihydrolipoic acid or cysteine; Described sulfydryl multicomponent organic acid has: dimercaptosuccinic acid, dimercaptosuccinic acid, cysteine glutamic acid oligopeptides or NAC aspartic acid oligopeptides; Reach the sulfydryl unit of above-mentioned arbitrary proportion formation, the mixture of multicomponent organic acid.
A kind of above-mentioned sulfydryl list or multicomponent organic acid surface finished II-VI family semiconductor quantum point methods of preparing is characterized in that the concrete steps of this method are as follows:
A. be mixed with the aqueous solution that concentration is 0.1～1M with solubility cadmium salt or zinc salt are water-soluble, add sulfydryl list or multicomponent organic acid, the mol ratio of cadmium salt or zinc salt and stabilizing agent sulfydryl list or multicomponent organic acid is 1:(2～3), the pH that regulates this solution is 7～13, the solution that obtains is called solution A;
B. under inert atmosphere, with selenium powder or tellurium powder and sodium borohydride according to 1:(2～4) mol ratio soluble in water, react to solution colour to pink, and the adularescent precipitation occurs, and promptly makes sodium hydrogen selenide or sodium hydrogen telluride solution, is referred to as solution B; This solution B is reduced to freezing point, splash into sulfuric acid, the control concentration of sulfuric acid and the speed of dropping tend to be steady reaction, produce gas C, and this gas C is fed in the above-mentioned solution A, react to solution A to change pale brown look into by colourless, obtain precursor solution; Perhaps, under inert atmosphere, with vulcanized sodium and sulfuric acid reaction, the concentration and the adding speed of control sulfuric acid tend to be steady reaction, obtain gas D, this gas D is fed in the above-mentioned solution A, react to solution A and change pale brown look into, obtain precursor solution by colourless;
C. above-mentioned precursor solution is added hot reflux 0.5-48 hour, obtain the CdX or the ZnX of sulfydryl list or multicomponent organic acid parcel, X=S, Se, Te quantum dot.
Above-mentioned solubility cadmium salt has: caddy, cadmium nitrate, cadmium sulfate or cadmium acetate; Described soluble zinc salt is: zinc chloride, zinc nitrate, zinc sulfate or zinc acetate.
Above-mentioned sulfydryl unit organic acid has: TGA, mercaptopropionic acid, sulfydryl butyric acid, sulfydryl valeric acid, dihydrolipoic acid or cysteine; Described sulfydryl multicomponent organic acid has: dimercaptosuccinic acid, dimercaptosuccinic acid, cysteine glutamic acid oligopeptides or NAC aspartic acid oligopeptides; Reach the sulfydryl unit of above-mentioned arbitrary proportion formation, the mixture of multicomponent organic acid.
Compared with prior art, the inventive method is a raw material with the gas phase, has reduced the difficulty that has reduced atmosphere protection in impurity component and the operation; be dressing agent simultaneously, increased water-solublely, optimized surface property with sulfydryl list or multicomponent organic acid; dispersiveness and photism are all good, CdX (X=S, the Se of the inventive method preparation; Te) and ZnX (X=S; Se, Te) quantum point grain diameter distributes from 2.0-6.0nm according to the difference of reacting reflux time; fluorescence quantum yield is higher, reaches as high as 80%.This emission spectrum at 500nm to the 650nm scope, low cost, the CdX that toxicity is little (X=S, Se, Te) and ZnX (Te) quantum dot can be directly used in experiments such as biological label for X=S, Se.
The specific embodiment
Embodiment one: concrete steps are as follows:
1. with 1.25mmol CdCl
22.5H
2O is dissolved in the 100ml water, adds the 3mmol dimercaptosuccinic acid, under agitation uses 1M Na0H adjust pH to 9, obtains solution A, and this solution A is transferred in the suitable there-necked flask.
2. the there-necked flask of 0.25mmol tellurium powder and 0.75mmol sodium borohydride being packed into adds argon gas a period of time, and adds the water of 0.2ml, room temperature reaction 30min, solution is separated out white precipitate and pink (the slowly logical always protection gas of whole process) occurred, obtains sodium hydrogen telluride solution, is called solution B; Question response is tending towards fully, this there-necked flask is immersed in the mixture of ice and water make it constant temperature.
3. in above-mentioned solution B, splash into sulfuric acid, the concentration of control sulfuric acid and the speed of dropping tend to be steady reaction, produce gas C.
4. with above-mentioned gas C, i.e. H
2Te under argon shield, feeds in the solution A with conduit, becomes pale brown look to solution, obtains precursor solution, and precursor solution does not have fluorescence as yet.
5.. above-mentioned precursor solution is added hot reflux 12 hours rapidly under protective atmosphere, the CdTe quantum dot that makes, the particle diameter of this quantum dot are 3.0-5.0nm, the fluorescence scope is at 500-650nm, and quantum efficiency is at 40%-85%.
Embodiment two: concrete steps are as follows:
1. the 1.25mmol cadmium acetate is dissolved in the 100ml water, adds the 3.5mmol cysteine.Under agitation use 1M NaOH adjust pH to 9, obtain solution A, this solution A is transferred in the suitable there-necked flask.
2. the there-necked flask of 0.25mmol selenium powder and 0.75mmol sodium borohydride being packed into, add argon gas a period of time, and the water of adding 0.2ml, room temperature reaction 30min, solution is separated out white precipitate and pink (the slowly logical always protection gas of whole process) occurred, obtain sodium hydrogen selenide solution, be called solution B; Question response is tending towards fully, this there-necked flask is immersed in the mixture of ice and water make it constant temperature.
3. in above-mentioned solution B, splash into sulfuric acid, the concentration of control sulfuric acid and the speed of dropping tend to be steady reaction, produce gas C.
4. above-mentioned gas C, i.e. H
2Se under argon shield, feeds in the solution A with conduit, becomes pale brown look to solution, obtains precursor solution, and precursor solution does not have fluorescence as yet.
5.. above-mentioned precursor solution was added hot reflux 1.5 hours, and the CdSe quantum dot that makes, the particle diameter of this quantum dot are 3.5-5.5nm, the fluorescence scope is at 550-600nm, and quantum efficiency is at 50%-85%.
Embodiment three: concrete steps are as follows:
1. with 1.25mmolZnCl
2Be dissolved in the 100ml water, add the 2mmol dihydrolipoic acid.Under agitation use 1M NaOH adjust pH to 13, obtain solution A, this solution A is transferred in the suitable there-necked flask.
2. with vulcanized sodium and sulfuric acid reaction, and the speed of control sulfuric acid concentration and dropping, reaction is tended to be steady, obtain gas C.
4. with above-mentioned gas C, promptly be H
2S under argon shield, feeds in the solution A with conduit, becomes pale brown look to solution, and this solution promptly is precursor solution, and precursor solution does not have fluorescence as yet.
5. above-mentioned precursor solution is added hot reflux 48 hours rapidly under protective atmosphere, the ZnS quantum dot that makes, the particle diameter of this quantum dot is controlled to be 2.5-5.0nm, and the fluorescence scope is at 550-650nm, and quantum efficiency is at 40%-75%.
Embodiment four: concrete steps are as follows:
1. 1.25mmol zinc sulfate is dissolved in the 100ml water, adds the mixture of 2mmol sulfydryl butyric acid and dimercaptosuccinic acid.Under agitation use 1M NaOH adjust pH to 7, obtain solution A, this solution A is transferred in the suitable there-necked flask.
2. the there-necked flask of 0.25mmol tellurium powder and 0.75mmol sodium borohydride being packed into, add argon gas a period of time, and the water of adding 0.2ml, room temperature reaction 30min, solution is separated out white precipitate and pink (the slowly logical always protection gas of whole process) occurred, obtain sodium hydrogen telluride solution, be called solution B; Question response is tending towards fully, this there-necked flask is immersed in the mixture of ice and water make it constant temperature.
3. in above-mentioned solution B, splash into sulfuric acid, the concentration of control sulfuric acid and the speed of dropping tend to be steady reaction, produce gas C.
4. with above-mentioned gas C, i.e. H
2Te under argon shield, feeds in the solution A with conduit, becomes pale brown look to solution, and this solution promptly is precursor solution, and precursor solution does not have fluorescence as yet.
5. above-mentioned precursor solution is added hot reflux 1 hour rapidly under protective atmosphere, make the ZnTe quantum dot, the particle diameter of this quantum dot can be controlled in 4.0-6.0nm, and the fluorescence scope is at 600-650nm, and quantum efficiency is at 40%-60%.
Embodiment five: concrete steps are as follows:
1. with 1.25mmolZnCl
2Be dissolved in the 100ml water, add 3.5mmol NAC aspartic acid oligopeptides.Under agitation use 1MNaOH adjust pH to 13, obtain solution A, this solution A is transferred in the suitable there-necked flask.
2. with vulcanized sodium and sulfuric acid reaction, and the speed of control sulfuric acid concentration and dropping, reaction is tended to be steady, obtain gas C.
4. with above-mentioned gas C, promptly be H
2S under argon shield, feeds in the solution A with conduit, becomes pale brown look to solution, and this solution promptly is precursor solution, and precursor solution does not have fluorescence as yet.
5. above-mentioned precursor solution is added hot reflux 48 hours rapidly under protective atmosphere, the ZnS quantum dot that makes, the particle diameter of this quantum dot is controlled to be 2.5-5.0nm, and the fluorescence scope is at 550-650nm, and quantum efficiency is at 40%-75%.
Claims (5)
1. a sulfydryl list or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point, it is characterized in that this quantum dot is with sulfydryl list or multicomponent organic acid parcel CdX or ZnX, X=S, Se, Te and the quantum dot that forms, wherein the mol ratio of sulfydryl list or multicomponent organic acid and CdX or ZnX is (1.5～3): 1; The particle diameter of quantum dot is 2.0～6.0nm.
2. sulfydryl list according to claim 1 or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point is characterized in that described sulfydryl unit organic acid has: TGA, mercaptopropionic acid, sulfydryl butyric acid, sulfydryl valeric acid, dihydrolipoic acid or cysteine; Described sulfydryl multicomponent organic acid has: dimercaptosuccinic acid, dimercaptosuccinic acid, cysteine glutamic acid oligopeptides or NAC aspartic acid oligopeptides; Reach the sulfydryl unit of above-mentioned arbitrary proportion formation, the mixture of multicomponent organic acid.
3. one kind prepares sulfydryl list according to claim 1 and 2 or multicomponent organic acid surface finished II-VI family semiconductor quantum point methods, it is characterized in that the concrete steps of this method are as follows:
A. be mixed with the aqueous solution that concentration is 0.1～1M with solubility cadmium salt or zinc salt are water-soluble, add sulfydryl list or multicomponent organic acid, the mol ratio of cadmium salt or zinc salt and stabilizing agent sulfydryl list or multicomponent organic acid is 1:(2～3), the pH that regulates this solution is 7～13, the solution that obtains is called solution A;
B. under inert atmosphere, with selenium powder or tellurium powder and sodium borohydride according to 1:(2～4) mol ratio soluble in water, react to solution colour to pink, and the adularescent precipitation occurs, and promptly makes sodium hydrogen selenide or sodium hydrogen telluride solution, is referred to as solution B; This solution B is reduced to freezing point, splash into sulfuric acid, the control concentration of sulfuric acid and the speed of dropping tend to be steady reaction, produce gas C, and this gas C is fed in the above-mentioned solution A, react to solution A to change pale brown look into by colourless, obtain precursor solution; Perhaps, under inert atmosphere, with vulcanized sodium and sulfuric acid reaction, the concentration and the adding speed of control sulfuric acid tend to be steady reaction, obtain gas D, this gas D is fed in the above-mentioned solution A, react to solution A and change pale brown look into, obtain precursor solution by colourless;
C. above-mentioned precursor solution is added hot reflux 0.5-48 hour, obtain the CdX or the ZnX of sulfydryl list or multicomponent organic acid parcel, X=S, Se, Te quantum dot.
4. the preparation method of sulfydryl list according to claim 3 or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point is characterized in that described solubility cadmium salt has: caddy, cadmium nitrate, cadmium sulfate or cadmium acetate; Described soluble zinc salt is: zinc chloride, zinc nitrate, zinc sulfate or zinc acetate.
5. the preparation method of sulfydryl list according to claim 3 or multicomponent organic acid surface finished II-VI family semiconductor-quantum-point is characterized in that described sulfydryl unit organic acid has: TGA, mercaptopropionic acid, sulfydryl butyric acid, sulfydryl valeric acid, dihydrolipoic acid or cysteine; Described sulfydryl multicomponent organic acid has: dimercaptosuccinic acid, dimercaptosuccinic acid, cysteine glutamic acid oligopeptides or NAC aspartic acid oligopeptides; Reach the sulfydryl unit of above-mentioned arbitrary proportion formation, the mixture of multicomponent organic acid.
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| CN101798511A (en) * | 2010-03-04 | 2010-08-11 | 上海大学 | Method for preparing group II-VI soluble selenide semiconductor quantum dots by gas phase method |
| CN102167977A (en) * | 2011-02-25 | 2011-08-31 | 华东师范大学 | Preparation method of II-VI family water-soluble selenide semiconductor quantum dots |
| CN102277157A (en) * | 2011-05-30 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Near-infrared silver sulphide quantum dot as well as preparation method and application thereof |
| CN103537302A (en) * | 2013-10-01 | 2014-01-29 | 大连理工大学 | Method for preparing compound nanometer photocatalyst by adopting CdSe quantum dot |
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| CN101747890B (en) * | 2010-01-21 | 2014-06-04 | 首都医科大学 | Synthesis and purification method of quantum dots wrapped by different ligands and product thereof |
| CN101798511A (en) * | 2010-03-04 | 2010-08-11 | 上海大学 | Method for preparing group II-VI soluble selenide semiconductor quantum dots by gas phase method |
| CN102167977A (en) * | 2011-02-25 | 2011-08-31 | 华东师范大学 | Preparation method of II-VI family water-soluble selenide semiconductor quantum dots |
| CN102277157A (en) * | 2011-05-30 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Near-infrared silver sulphide quantum dot as well as preparation method and application thereof |
| WO2012163078A1 (en) * | 2011-05-30 | 2012-12-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Near-infrared silver sulfide quantum dot, preparation method therefor and biological application thereof |
| CN102277157B (en) * | 2011-05-30 | 2014-06-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Near-infrared silver sulphide quantum dot as well as preparation method and application thereof |
| RU2576052C2 (en) * | 2011-05-30 | 2016-02-27 | Сучжоу Инститьют Оф Нано-Тек Энд Нано-Бионикс, Чайниз Академи Оф Сайэнсиз | Quantum points of silver sulphide, radiating in near infrared spectrum area, method for obtaining thereof and application in biology |
| US10421901B2 (en) | 2011-05-30 | 2019-09-24 | Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences | Preparation method of near-infrared silver sulfide quantum dots |
| CN103537302A (en) * | 2013-10-01 | 2014-01-29 | 大连理工大学 | Method for preparing compound nanometer photocatalyst by adopting CdSe quantum dot |
| CN104610971A (en) * | 2014-05-06 | 2015-05-13 | 上海大学 | Aqueous-phase preparation method of ZnTe quantum dots with high fluorescence yield |
| CN109081305A (en) * | 2018-08-16 | 2018-12-25 | 陕西师范大学 | A kind of method of while biomass degradation and light degradation aquatic products hydrogen |
| CN113512089A (en) * | 2021-06-30 | 2021-10-19 | 兰州大学 | Polypeptide stabilizer of water-soluble quantum dots and application thereof |
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