CN101495669A - Bonded multi-layer RF window - Google Patents
Bonded multi-layer RF window Download PDFInfo
- Publication number
- CN101495669A CN101495669A CNA2006800085484A CN200680008548A CN101495669A CN 101495669 A CN101495669 A CN 101495669A CN A2006800085484 A CNA2006800085484 A CN A2006800085484A CN 200680008548 A CN200680008548 A CN 200680008548A CN 101495669 A CN101495669 A CN 101495669A
- Authority
- CN
- China
- Prior art keywords
- layer
- window
- mentioned
- dielectric materials
- skin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 230000008569 process Effects 0.000 claims abstract description 48
- 239000003989 dielectric material Substances 0.000 claims abstract description 42
- 238000009826 distribution Methods 0.000 claims abstract description 37
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 16
- 239000007924 injection Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 239000002826 coolant Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 164
- 239000011521 glass Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 14
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 13
- 229940037003 alum Drugs 0.000 claims description 11
- 239000004927 clay Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- -1 RTV siloxanes Chemical class 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 150000002118 epoxides Chemical class 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 239000000075 oxide glass Substances 0.000 claims 2
- 239000011224 oxide ceramic Substances 0.000 claims 1
- 229910052574 oxide ceramic Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 66
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- 238000012545 processing Methods 0.000 description 14
- 230000004927 fusion Effects 0.000 description 9
- 239000002223 garnet Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000004087 circulation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 241000237858 Gastropoda Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
A bonded multi-layer RF window (130) may include an external layer (132) of dielectric material having desired thermal properties, an internal layer (134) of dielectric material exposed to plasma inside a reaction chamber (100), and an intermediate layer (136) of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy (112) through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF (150) window may include cooling conduits (158) for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits (178) and gas injection apertures (180) may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.
Description
Technical field
The present invention is roughly about the plasma process cavity, more detailed it, for about it can allow coupling radio frequency energy to the plasma process cavity through bonded multilayer dielectric window.
Background technology
(radio frequency, RF) control of the temperature of plasma body becomes and reaches and keep the important factor that forms the feature homogeneity in these cavitys on the handled wafer radio frequency recently in the plasma reaction chamber.When wafer density increases and time micron feature size continues to reduce, the control critical size be based upon measurable and stable plasma temperature in each fabrication steps (comprise this equitemperature comprise in the face of and in abutting connection with the temperature of the wall of plasma body) then even more important.The ionization of unstable temperature condition influence gaseous chemical in reaction cavity causes plasma density and homogeneity to change.Temperature variation influences W-response in the cavity, and can cause from a wafer to next wafer or even on single wafer the process results from a crystal grain to next crystal grain inequality.
When the accurate control of plasma temperature can be crucial to many fabrication steps, design its day sexual orientation that known radio frequency reaction cavity system uses causes plasma temperature to be offset from the best.During manufacture, semiconductor wafer can be fixed in the chuck that is arranged in cavity usually.In modular design, wafer can affixedly approach dielectric window, and for example 5 inches (13 millimeters) or nearer, radio-frequency energy is coupled to cavity by this window.
Conventional system lacks significant temp control to dielectric radio-frequency window itself usually; Therefore, cause the temperature change of window to influence the reaction of plasma body composition and plasma body and wafer.Moreover because wafer is usually located near this window, any plasma body composition change that causes because of the window temperature all can influence process results.The typical case that plasma body is formed changes and leads because of in the influence of window surface temperature to the gas particle recombination rate.In addition, the window temperature can influence at coil (wind) and go up polymer deposition speed, and the secondary electron emission constant on penetrating window surface changes the plasma body behavior that influences.
Except reliability and the efficient that reduces single processing procedure, the inappropriate thermal control meeting of RF window reduces the consistence from a processing procedure to next processing procedure gained result.When RF window in repeated exposure during the successive process steps during in the high-energy rf electric field, the thermal control problem just may worsen.
People such as Wicker are at United States Patent (USP) the 6th, 033, disclose the multilayer dielectric window that is used for radio-frequency plasma reaction chamber in No. 585.Dielectric window enters reaction cavity from external radio frequency source coupling radio frequency energy.Another layer dielectric materials below main window layer is as gas tip.Refrigerant can be controlled as minimal temperature cycling through the radio-frequency coil that is positioned at above the window.Yet people's such as Wicker multi-layer RF window does not use through the bonded layer between window and shower nozzle.Opposite, people such as Wicker describe additional shower nozzle to form the shower nozzle passage to dielectric window or in rough mode (green form), and follow sintering to form integrated dielectric window and shower nozzle.Among the former, the heat passage meeting from shower nozzle to window is subject to the surface-area contact and is suppressed.Above-mentioned temperature control problem is born by exposure system of institute, and people such as Wicker does not have to disclose the creative plan to the latter.
People such as Howald are at United States Patent (USP) the 6th, 074, disclose forming sapphire transparent optical window as the plug in the silicon oxide dielectric RF window, need to be used to the radio-frequency plasma etch chamber of optical detecting etch process in No. 516.Sapphire can improve the tolerance of article on plasma body and keep the transparency of optical window, and people's such as right Howald device is not incorporated shower nozzle into and temperature control is not provided.
Industry has the demand that continues growth for the RF window with suitable thermal property and heat transfer characteristics.Need the temperature variation of RF window to minimize, not influence the plasma body in the reaction cavity.Avoid the temperature variation of RF window to need suitable heat transfer characteristics to remove the excessive heat that produces at the window internal surface by plasma process.This feature should comprise the Rapid Thermal reaction, makes that there is not temperature variation in the window surface when excessive heat is passed to outside surface in thick dielectric window.In addition, Cement Composite Treated by Plasma 300mm wafer is required to be used for the compressive sealed of major diameter cavity and not to need the supernumerary structure support allow to use to need RF window to have sufficient mechanical strength.Also need not introduce particle or chemical pollutant to the RF window of reaction cavity and its and need ability subject plasma processing environment.
Be used for the plasma chamber wall and comprise quartz or silicon oxide (SiO as the most general dielectric materials of the parts of window
2) and alum clay (Al
2O
3).Their intensity can be born vacuum and relatively not expensive but can be easily etched at plasma environment.Silicon nitride (Si
3N
4) be can tolerate some plasma environments but have high-k to reach than low strength.Yttrium oxide (Y
2O
3) and the yttrium aluminum garnet of less composition (YAG has composition Y
xAl
yO
z) excellent plasma etching tolerance and suitable physical strength are provided, but just very expensive during these materials of heavy demand.That is all known dielectric material can't provide all required character of dielectric wall of plasma chamber.
In the inside cavity coating, for example pass through plasma sprayed as everyone knows, but protective lining.Yet the machinery of these protective linings and chemical property typically are not so good as the character of sinter (that is bulk ceramic material).Therefore, the common bulk ceramic material that also can't be used for replacing the plasma process cavity of plasma sprayed member.
Summary of the invention
The present invention is by providing in the plasma process cavity through overcome aforementioned and other shortcoming of conventional system in conjunction with the multilayer dielectric wall.This wall can form RF window and be used for coupling radio frequency energy to cavity, and for example can form the general plane lid from the outside ruhmkorff coil of cavity or its provides to chamber interior.
In one embodiment, for interior and the outer and three-layered node that independently has (free-standing) main body is unified, and these layers have the heterogeneity of selecting for different characteristics, for example plasma etching tolerance, intensity, heat conductivity and RF impedance.
In another embodiment, interior and outer with loose rough main body (green body) formation that combines with agglutinant of heterogeneity powder.Main body has the sintered layer structure that powder particle partly engages through common burning (co-fired) with formation.Preferably, middle rough main body is located in those with outer interlayer and burns jointly with as the transition key coat.
In further embodiment, make up in the mode that forms glass powder therebetween with outer series of strata in self-existent.This assembly then enough form glass coating in conjunction with interior and outer field temperature under roast, but its roast temperature is lower than interior and outer field melting temperature.
Other aspect of the present invention can confirm that a RF window internal surface have suitable refrigerative mode by the institute during reaction procedure is free, the temperature variation due to the temperature variation of plasma confinement body internal cause RF window.That is the surface and the plasma body that are exposed to the cavity internal volume can cool off on one's own initiative.
According to an aspect of the present invention, can generally include the skin of dielectric materials through the bonded multi-layer RF window, it has required machinery and thermal properties and is exposed to source of radio frequency energy; The internal layer of dielectric materials is exposed at the plasma body of plasma reaction chamber inside and has suitable plasma-resistant degree character; And the middle layer of bond material, the position internal layer with outside interlayer.Bond material can contact internal layer and both whole confronting surfaces zones of skin substantially, to pass through the contact promotion of broad surface from extremely outer field thermal conduction of internal layer.By the inside cavity chemical reaction and can be sent to skin by internal layer by the heat of propagating radio-frequency (RF) energy from window and partially absorbing generation and leave, it can cool off during wafer fabrication process.
According to another aspect of the present invention, can comprise that through the bonded multi-layer RF window psychrophore is in the middle layer or at interlayer interface in fact as mentioned above.Operating period, refrigerant was capable of circulation through psychrophore, and increase is from internal layer to outer field thermal conduction.
According to another aspect of the present invention, can comprise that through the bonded multi-layer RF window gas distribution conduits is in the middle layer or at the interface of other two interlayer.Gas injection hole can be provided at internal layer with from gas duct distribution process gas to plasma reaction chamber.
According to an aspect more of the present invention, comprise that the system of plasma reaction chamber can use of the present invention through the bonded multi-layer RF window.
Of the present invention above-mentioned and other follow advantage can be changed into more obvious with reference to the following detailed description of appended graphic inspection embodiment.
Description of drawings
Fig. 1 is the simplification sectional view of conventional radio-frequency plasma reaction chamber.
Fig. 2 is the simplification sectional view through an embodiment of bonded multi-layer RF window.
Fig. 3 is the simplification sectional view through another embodiment of bonded multi-layer RF window.
Fig. 4 is for using the simplification sectional view through an embodiment of bonded multi-layer RF window of psychrophore.
Fig. 5 is the simplification sectional view through an embodiment of bonded multi-layer RF window of using gas distribution conduit and gas injection hole.
Fig. 6 is the simplification sectional view that uses in plasma reaction chamber through the system of bonded multi-layer RF window.
Fig. 7 is a shower nozzle sectional view according to another embodiment of the present invention.
The primary clustering nomenclature
100 reaction cavities, 102 process gas inlet
104 air outlets, 106 chuck
108 wafers, 110 RF windows
112 radio-frequency (RF) energy, 124 source of radio frequency energy
120 fans, 130 multi-layer RF windows
132 outer 134 internal layers
136 middle layers, 138 electroheat pairs
140 through bonded multi-layer RF window 142 internal layers
144 outer 146 middle layers
150 through bonded multi-layer RF window 152 skins
154 internal layers, 156 middle layers
158 electroheat pairs, 160 passages/groove
170 through bonded multi-layer RF window 172 internal layers
174 outer 176 middle layers
178 gas distribution conduits, 180 gas injection holes
190 through bonded multi-layer RF window 200 ceramic shower nozzles
202 ceramic backboard 204 gases are lived inlet
206 position angle gas distribution channel, 208 shower nozzle central shafts
210 radial distribution channels, 212 edges
214 key coats, 216 ceramic header boards
218 gas orifices
Embodiment
With reference now to graphic,, Fig. 1 is for being used for making at the silicon wafer unicircuit simplification sectional view of the known radio-frequency plasma cavity of typical processes at present.Reaction cavity 100 comprises that typically one or more gas inlet 102, air outlet 104 are connected to vacuum-pumping system and chuck 106 is used to support desire processing wafer 108.Gas inlet 102 can be nozzle type, process gas is distributed in the broader region on chuck 106 opposites.In a kind of pattern of radio-frequency plasma reaction chamber, RF window 110 is arranged at respect to chuck 108 and sentences radio-frequency (RF) energy 112 (typically in low MHz operation) that transmission produces by source of radio frequency energy 114 to handle the process gas in reaction cavity 100.In a Typical Disposition, RF window 110 can cool off outside reaction cavity 100.For example, the fan 120 recirculated airs back side of crossing RF window 110.Radio frequency source 114 can be induction coil antenna, and it can and be positioned at contiguous RF window 110 by the radio frequency power supplies driving.Coil antenna can be one or more solenoid coil of spiral winding center axes at RF window 110 back sides, be known as the IPS etch chamber of Material Used; pancake shape coil is the snail configuration in RF window 110 back sides; be known as the TCP etch chamber of Lay research company (LamResearch); or the 2 D-coil spiral twines the semisphere window; be known as DPS etch chamber at the Material Used of California Sheng Talala; or the more complicated snail shape that is generally, be known as DPS II etch chamber with material.Other loop construction is possible.For example, ruhmkorff coil can coat abutment wall.Other radio frequency source has the waveform output in the face of RF window for may and comprising microwave source.In typical structure, radio-frequency (RF) energy is coupled to cavity 100 through RF window 110, handles wafer 108 or other reason process gas is excited into reactive plasma.Yet reactive plasma also can interact with RF window and may its effect of deterioration.
Fig. 2 is the sectional view through an embodiment of bonded multi-layer RF window 130.Multi-layer RF window is a useful reason for acquisition is fit to the interior of cavity and outer both material advantage, avoid simultaneously need be in cavity with external demand otherwise compromise in the competition with material character.In illustrative embodiments, RF window 130 can generally include dielectric materials skin 132 face arround or the internal layer 134 of cavity outside, different dielectric material in the face of contain cavity inboard in order to the plasma body of handling wafer, and the middle layer 136 of bond material be arranged at outer 132 and 134 of internal layers.In a method, interior and outer 132,134 in assembling and combine preceding for whole and exist for independent relative to each other.That is layer 132,134 neither is to be deposited as the layer of growing up on another person.
For example, some potteries have excellent heat conductive features and physical strength compared to other dielectric materials that is generally used for RF window.Be the inorganic materials of finger except gold and metal alloy by pottery, that is form by high temperature process.Pottery can be agglomerated material or glass.Pottery comprises alum clay, quartz, garnet, YAG and silicon nitride, forms but not film with the bulk material assembly.Many (but non-all) pottery be characterized as metal oxide, other is a metal nitride.
But optional then the selecting of outer dielectric material makes outer 132 to transmit the radio-frequency (RF) energy of receiving amount effectively, and relatively little absorption and decay are arranged, provide effective thermal conduction to cool off internal layer 134 (as described below) and to provide sufficient mechanical strength to bear the power that the reaction cavity inner vacuum is produced.Multiple pottery has this kind thermal heat transfer capability and physical strength usually.Therefore, pottery compared to other dielectric materials can be more reliably and be suitable for outer 132, especially for having large size RF window, for example major diameter.Aluminium nitride can be used for outer 132.
The internal layer 134 of interior dielectric materials needs to transmit radio-frequency (RF) energy and thermodiffusion.In addition, internal layer 134 is exposed to plasma reaction chamber 100 internal plasma.If internal layer 134 is kept with respect to outer 132 for thin, its specific inductivity, radio frequency absorption, thermal diffusivity than the tolerance level of its article on plasma body etching and process chemistry effect for more inessential.Therefore, the dielectric materials of selecting for internal layer 134 is different from outer 132 selection usually.Can use quartz or ceramic dielectric thing, these fully prove and are applicable to manufacture of semiconductor.The different shaped quartz can be used for outer and internal layer 132,134.More importantly be that internal layer 134 should tolerate the esoteric chemical reaction in chamber.Have the knack of the selection that this operator should understand internal layer 134 materials and can be the function that in reaction cavity, uses the particular process chemistry.
For example, manyly plant the quartzy environment that can resist plasma reaction chamber and only introduce few or do not have pollutent to cavity at operation room.For other example, yttrium aluminum garnet (YAG) can be advantageously used in the face of the processing procedure plasma body for stupalith can produce from aluminium and yttrium oxide different ratios mixture.YAG and other associated materials advantageously produce chemistry particulate or pollutent in some processing procedure.Same, silicon nitride can suitably bear deterioration during plasma body in meeting with cavity.Alum clay also has been used for the parts in the face of plasma body, but it more is typically and is used for skin.
Yet outer 134 material is not limited to pottery.Plastics or polymkeric substance with enough etch resistance can be attached to outer 132 inside.
Yet the material of many tool processing procedure reliabilities (for example described person of preamble) may experience because of transmission of radio-frequency energy or the temperature that partially absorbs increase, and thereby can become enough heat during particular process and influence temperature in the plasma process zone.Also possibility plasma heating window is to being higher than the required temperature of process chemistry.Many plasma process need the temperature of plasma chamber wall to be controlled in required scope.In the embodiment of Fig. 2, therefore, it need make the temperature of window 130 internal surfaces not influence the intravital processing procedure of reaction chamber from internal layer 134 conduction heat.
Yet, be in the same place when two hard materials (for example pottery and quartzy) clip surface as the illustration combination, being less than 2% respective surface is actual contact.At molecular level, so the contact of the surface-area of small proportion is created in the difficulty of conduction heat transfer between two surfaces.Yet, when two identical surfaces use known techniques to combine, just can significantly increase effective surface in contact, so that contact is high to 95% of respective surface.Therefore during in conjunction with two surfaces, just can contact and promote from a surface to another surperficial thermal conduction by the surface that bond material increased.
The example of pottery
Alum clay or quartzy be outer 132 preferred materials and garnet or the less content YAG preferred materials that is cladding material 134.Yet the present invention is not limited to these materials.Alum clay and quartzy suitable intensity can get in reasonable price at suitable thickness.The garnet of high etch resistance and YAG are for getting but its thickness should minimize to reduce cost.
Illustrate as Fig. 2, can comprise outside the middle layer 136 of bond material is arranged at and 132,134 of internal layers through bonded multi-layer RF window 130.As mentioned above, bond material provide outer 132 with the contacting of the whole in fact surf zone of internal layer 134.Broad surface area contact by middle layer 136 produces can promote the heat conductivity from internal layer 134 to skin 132.By chemical reaction in the cavity and transmit radio-frequency (RF) energy and institute's portion of energy that causes by window 130 and absorb the heat that is produced and can be passed to outer 132 by internal layer 134 and leave, and outer 132 can be cooled off by fan 120 during wafer fabrication process.
The bond material that is used for middle layer 136 should also allow transmission of radio-frequency energy.Can use some different shaped bond materials.Example comprises sticking agent and fusion glass layers.
Sticking agent composition example can comprise not dragon of polyimide or iron
(hydrophobicity is fluoridized carbon compound), multiple vacuum authentication epoxide, presser sensor sticking agent (PSA).Self cure (RTV) siloxanes also can be accepted as bond material.Stick together the bonded several different methods for known in technical field, and the most effective combination technology depends primarily on function and the selected bond material of desiring the bonded material category.
Should apprehensiblely be that the main purpose of bond material is for increasing contact area outer and interior interlayer.Internal layer and cladding material have required contact property, and other character, and the demand of comprehensive (comprehensive) key coat can reduce or eliminate.
Fusion glass in conjunction with relate to the precursor that is roughly powder be sandwiched in form and in independent the existence with outer ceramic component, for example, sintering alum clay or garnet.But powder can be suspended in plastics or cellulose binder and flowing mixture can brush to ceramic component one or both on.Two assemblies then make up and little pressure puts on the assembly.Assembly moves to stove and is heated to the glass melting temperature, and it makes powder precursor fusing to form can flow glass but be lower than two ceramic component fusing points of melting.This temperature then reduces in the controlled chilling mode but fast being enough to makes fusion glass maintain the vitreous state form under room temperature and classicalpiston reactor service temperature.Glass is subjected to moist roughly ceramic for good, and therefore can form good fusion bond junction spreading to whole surface between two ceramic layers.
The fusion glass example
For supplying to compare, alum clay, quartz and garnet fusing point are respectively 2040 ℃, 1720 ℃ and 1940 ℃.Fusion glass should have the glass formation temperature that is lower than in fact in abutting connection with the quartz material fusing point.Thermal expansivity between differing materials should be kept identical as far as possible.Fusion glass is typically mixed with required component proportions by the different metal oxides powder and is placed two to form with outer interlayer in having formed powdered mixture.If desired, the volatility wedding agent can be kept powder together.When the heating glass bead mount, assembly can pressurize and together.The melting combination provides the tight bond of crossing whole interface, and therefore promotes thermodiffusion.
Though the invention is not restricted to this, following three kinds of fusion glass powdered mixture can provide splendid assurance, especially for alum clay and the garnet glass melting person of combination: (1) Al
2O
3-SiO
2-CaO; (2) Al
2O
3-Y
2O
3-SiO
2And (3) Al
2O
3-SiO
2-CaO.Usually, plumbous and magnesium should be avoided in semiconductor application.
Electric heating occasionally other temperature measuring equipment can be used for detecting temperature in window 130 one or more positions.In the embodiment of Fig. 2, electroheat pair 138 embeds skin 132 and can be used for the temperature detecting in continuous or the discontinuous timed interval.By using suitable feedback loop and circuit, the cooling system of use fan 120 or other refrigerating unit can provide the dynamic thermal control of window 130.When temperature was cooled to via electroheat pair 138 control, the material that all of window layer uses have enough high thermal conductivities did not have temperature fluctuation improperly with the temperature of may command window internal surface.
The position that should understand electroheat pair 138 is only for illustrating for example, but non-in order to restriction the present invention.Use is more than one electroheat pair, for example, or changes temperature measuring equipment hoop or radial position also in the scope of the invention and intention.For example in one embodiment, one or more temperature detecting device can directly be measured internal layer 134 and middle layer 136 temperature and skin 132, as shown in Figure 2.
Have the knack of this operator and can understand the relative thickness of each layer 132,134,136 among Fig. 2 only for illustration but not in order to restriction the present invention.Mention briefly that as top outer 132 can provide window 130 primary structure intensity and can be thicker relatively with respect to internal layer 134.In one embodiment, for example, outer 132 can be stupalith has thickness and is approximately 3/4 " (19 millimeters), and internal layer 134 can be the multiple quartz of plasma-resistant and has thickness 1/4 " (6.4 millimeters).In this embodiment, the middle layer 136 of bond material can have about 2 to 10 millimeters thickness, decides according to for example used bond material type and combining method.
Fig. 3 is shaped as semicircularly to simplify sectional view through another embodiment in conjunction with multi-layer RF window, and for example, two size semicircles are symmetrical in central shaft, and it twines inductive radio-frequency antenna coil.In the embodiments of figure 3, RF window 140 can comprise roughly that dielectric materials skin 142, dielectric materials internal layer 144 and bond material middle layer 146 are arranged at interior and outer 142,144.Layer 142,144,146 can all have same curved dome shape.
Be similar to the embodiment that above-mentioned reference Fig. 2 discusses, outer 142 when being exposed to radio-frequency (RF) energy source permission radio-frequency (RF) energy 112 by its transmission.Can comprise that fan 120 recirculated airs cross outer 142 exposed side to cool off the other parts of it and window 140.As previously mentioned, outer 142 can be enough thick largest portion thermal dispersion to be provided and window 140 structural strengths are provided.Therefore, outer 142 can be made of stupalith, and as previously mentioned, transmission can be accepted heat conductivity and the physical strength that the ratio radio-frequency (RF) energy is used for application-specific and suitable degree is provided.
Internal layer 144 (it also allows transmission of radio-frequency energy) is exposed to plasma reaction chamber 100 internal plasma.Therefore, need to select internal layer 144 dielectric materialss of tool processing procedure reliability, that is internal layer 144 should tolerate plasma body and chemical reaction take place in the cavity.Can use quartz or ceramic dielectric thing (for example YAG material or silicon nitride, for example), as discussed.
As the embodiment of Fig. 2, (it can be the not imperial polymkeric substance of polyimide, iron, PSA, RTV siloxanes or vacuum authentication epoxide to bond material, and middle layer 146 for example) is arranged at outer and 142,144 of internal layers.Bond material provides outer 142 contact the heat conductivity of promotion from internal layer 144 to skin 142 with the whole in fact surf zone of internal layer 144.
Though do not illustrate in Fig. 3, one or more electric heating occasionally other temperature measuring equipment can be used in measurement window 140 one or more position temperature, makes cooling system that the accurate thermal control of window 140 can be provided.
In view of the window among Fig. 2 130 can be plane in fact, the window 140 that Fig. 3 illustrates has default in fact curvature.Window 140 curvatures can be used for focusing on radio-frequency (RF) energy to desired location or present homogeneous plasma source region more and promote effective cooling of internal layer 144 when window 140 through integrated structure.
Have the knack of thickness that this operator can understand thickness and window only for the example formula illustrates, and non-limited way.The different radii and the relative thickness of each layer 142,144,146 curvature can use according to application.
Fig. 4 simplifies sectional view for the embodiment through the bonded multi-layer RF window that uses psychrophore.Skin 152, internal layer 154 and middle layer 156 are roughly corresponding to above-mentioned layer 132,134 and layer 136.Difference between the 2nd and 4 figure embodiment has extra psychrophore 158 among Fig. 4 embodiment.Increased from internal layer 154 heat conducting validity and speed by psychrophore 158 as the refrigerant of water is capable of circulation.
As described in Figure 4, psychrophore 158 can produce in bond material and in middle layer 156 by corresponding space 158 is provided.Though these spaces 158 can be reduced in and outer contact ratio with 152,154 surface-area of internal layer, refrigerant circulates by psychrophore 158 can increase window 150 whole rate of cooling, and internal layer 154 particularly.In making a method of psychrophore 158, be coupled to outerly 152 with middle layer 156 material blocks of number of levels configuration set, and have several horizontal-extending spaces 158 or several separate the lateral clearance of these pieces.The piece that internal layer 152 can then be bonded to middle layer 156 supports space 158.Elongated tiles is configurable mainly to extend a direction in line style array and passage, or short or square block is configurable at two directions row and be connected two directions and extend passage.In addition or replacedly, psychrophore 158 can be before layer 152,154,156 assembling, by form passage or groove 160 outer 152 or groove 162 form in internal layer 154 or two groups of slots 160,162 modes such as interface in them and middle layer 156.Groove 160,162 can or can not aimed at space 158 in the middle layer.
When with passage, groove or further feature (for example space in the bond material 158 among Fig. 4) when the psychrophore, the liquid coolant supply can be under pressure circulates in mode predetermined or that dynamically adjust flow velocity.In this embodiment, one or more temperature detecting device as electroheat pair 138 makes to have at the thermometric cooling system of window 150 desired locations and becomes possibility.Control Circulation responds these temperature surveys can regulate coolant flow speed according to the temperature survey of window 150.Except coolant flow through psychrophore 158, the RF window cooling system also can use fan 120 to cross outer 152 exposed surface, person as previously mentioned with recirculated air.
Have the knack of the number that this operator can understand psychrophore 158 and can influence process of cooling with configuration.The ad hoc structure of psychrophore 158 provide optimizing be cooled to according to the material of layer 152,154,156 select and height correlation in using which kind of cavity.
Fig. 5 is the simplification sectional view through an embodiment of bonded multi-layer RF window 170 that using gas distribution conduit and gas injection hole form shower nozzle.Skin 172, internal layer 174 and middle layer 176 are roughly corresponding to above-mentioned layer 132,134 and 136; Yet the difference between Fig. 2 and 5 embodiment is to have among Fig. 5 embodiment the gas distribution conduits 178 of adding to be formed in the middle layer 176 and gas injection hole 180 is formed in the internal layer 174 and links at least some gas distribution conduits 178 to manufacture process cavity 100 inside.To gas injection hole 180, it is mainly extend perpendicular to connect gas distribution conduits 178 to manufacture process cavity 100 inside to the extension of gas distribution conduits 178 main levels with supply gas.One or more passes outer 172 through holes that form and can be used for supplying process gas to interconnected gas distribution conduits 178.Gas distribution conduits 178 can similar above-mentioned structure with reference to figure 4 liquid cooling conduits 158.Process gas can be by gas distribution conduits 178 circulations to pass through aiming at the gas injection hole 180 injected plasma reaction cavities of gas distribution conduits 178 at internal layer 174.
As described in Figure 5, gas distribution conduits 178 is formed in the middle layer 176 by importing the mode of space 178 in the middle layer 176 of bond material.In addition or replacedly, gas distribution conduits 178 can produce with middle layer interface alignment grooves 182 by form passage or groove 182 in internal layer 174.Groove 160,162 can or can not aimed at space 158 in the middle layer.Gas injection hole 180 combines with gas distribution conduits and can be configured in internal layer 174 to reach the process zone desired gas distribution at reaction cavity by the desired style.
In operation, window 170 can be used as gas distribution showerhead.Flow velocity is being scheduled to or dynamically adjusted to process gas can under pressure, distribute by gas distribution conduits 178 and introduce reaction cavities to see through gas injection hole 180.
Embodiment as discussed previously can provide the cooling system temperature survey in window 170 desired locations as the temperature detecting device of electroheat pair 138.Respond then adjustable rectification campaign fan 120 operations of this thermometric pilot circuit (not icon), cross skin 172, person as previously mentioned with recirculated air.
Fig. 6 uses in plasma chamber through the simplification sectional view in conjunction with the system of multi-layer RF window 190.Reaction cavity 100 comprises that roughly process gas inlet 102, processing procedure air outlet 10 and pedestal 106 have chuck and be used for support and clamping desire processing wafer 108.RF window 190 enclosed housings 100 and the radio-frequency (RF) energy that produced by source of radio frequency energy 114 can be passed to process gas in the reaction cavity 100 through window 190.
Ceramic according to an embodiment of the invention shower nozzle 200 is described in the sectional view of Fig. 7.For example aluminous ceramic back plate 202 is that mechanical workout is to form gas hand-hole 204 at its back side.A plurality of, for example three, annular azimuthal distribution channels 206 is for being machined to backboard 202 fronts being the ring-type symmetry to shower nozzle central shaft 208.A plurality of radial distribution channels 210 are crossed respective diameters or radius with angular distribution passage 206 of connection orientation and gas injection hole 204 for mechanical workout.Backboard 202 remainders for the residue plane comprise edge 212 in the outermost direction angle distribution channel outside and the sealing process gas in window 200.
The thin key coat 214 of glass precursor and wedding agent is brushed on garnet quartzy header board 216 for example, and backboard 202 is reduced on the key coat 214 and covers on the header board 216.Unclear the demonstration is mainly backboard 202 belows contact key coat 214 among the figure.Assembly then moves to stove and heating is that fusion glass forms key coat 214 to change glass precursor.Key coat 214 is in a ratio of enough thinly with distribution channel 206,210 before heating, is less than 1 millimeter, though key coat 214 even do not fill up distribution channel 206,210 have the end of at or not there are some circle shapes at the edge when its melting attitude.
Bead mount is according to the standard method cooling that is used for glass.Then, gas orifice 218 bored header board 216 and vitreous state key coat 214 to connect radial distribution channels 210 or the angular distribution passage 206 of closure alternatively.
Gained ceramic showerhead 200 is made up of dielectric materials fully, makes shower nozzle 200 also can be used as the position by the RF window of the radio-frequency coil at plate 202 back sides.Yet ceramic showerhead 700 can not need radio-frequency coil and uses, for example when process gas (perhaps in excited state) is not answered the contacting metal surface.Moreover both can be made up of ceramic layer 202,216 same ceramic material, if when particularly the etch resistance of internal layer 216 is not key request.
By saving the mechanical processing steps of aforementioned formation shower nozzle, same assembling and annealing process can be used for not patterning RF window.
RF window through liquid cooling can be made similarly, promptly is used for supply and discharges cooling liqs by two holes 204 are set, and form several distribution channel such as one or more is connected to the shape passage that circles round of supply and outlet orifice.In the RF window of liquid cooling, then do not establish gas orifice 218.
Perhaps, ceramic back plate 202 can constitute and contains distribution channel that is useful on gas and the split tunnel that is used for liquid coolant, and it is connected to isolating supply and the outlet orifice that is used for two different shaped passages.But gas distribution and coolant passage construction are as at the passage of ceramic back plate 202 bottoms and can use key coat 214 and the combination of shower plate 216 allows and is isolated from each other.
Can reach at these passages of manufacturing in the additional flexibility of substrate ceramic back plate 202 at substrate backboard 202 and 204 of key coats by increasing by the 3rd quartz plate.The 3rd quartz plate will attach to base back plate with second key coat, the bottom of its sealing coolant passage.The 3rd quartz plate can contain path and the gas distribution channel that is useful on the process gas transmission, and it can be connected to gas orifice 218.
In preamble, should know that the present invention can effectively and as one man disperse the RF window inboard because of the heat that is exposed to the intravital plasma body gained of reaction chamber.Moreover the present invention is not restricted to RF window but can advantageously be applied to the vacuum wall of plasma process cavity.
Embodiment in this exposure describes and illustrates by way of example, and non-limiting; Haveing the knack of this operator can understand and can carry out multiple variation and do not depart from spirit of the present invention and scope.
Claims (32)
1. multi-layer RF window that is used for a plasma body reaction cavity, this RF window comprises at least:
One skin of one first dielectric materials;
One internal layer of one second dielectric materials; And
One middle layer of one bond material, interlayer in being disposed at this skin and being somebody's turn to do; Wherein above-mentioned internal layer combines with this skin by this middle layer.
2. multi-layer RF window as claimed in claim 1, this wherein above-mentioned skin has a physical strength that is higher than this internal layer.
3. multi-layer RF window as claimed in claim 1, first and second wherein above-mentioned dielectric materials comprises pottery respectively.
4. multi-layer RF window as claimed in claim 3, the second wherein above-mentioned dielectric materials comprises quartz.
5. multi-layer RF window as claimed in claim 1, the first wherein above-mentioned dielectric materials are that one first pottery and this second dielectric materials are and one second different pottery of this first pottery.
6. multi-layer RF window as claimed in claim 1, the first wherein above-mentioned dielectric materials are that alum clay and this second dielectric materials are wherein one of yttrium oxide and yttrium aluminum garnet.
7. multi-layer RF window as claimed in claim 1 further comprises a psychrophore and is formed on one between adjoining course at the interface.
8. multi-layer RF window as claimed in claim 7 further comprises a cooling system, responds the temperature survey of this RF window and controls a coolant flow through this psychrophore.
9. multi-layer RF window as claimed in claim 7, wherein above-mentioned psychrophore are positioned at one between this skin and this middle layer at the interface.
10. multi-layer RF window as claimed in claim 7, wherein above-mentioned psychrophore are positioned at one between this internal layer and this middle layer at the interface.
11. multi-layer RF window as claimed in claim 1 further comprises several gas dispensing conduit and several gas injection holes at this internal layer in this middle layer; This gas dispensing conduit cooperates one or more process gas of transmission to this plasma body reaction cavity with this gas injection hole.
12. multi-layer RF window as claimed in claim 1, wherein above-mentioned bond material are to be selected from the cohort that the not imperial polymkeric substance of polyimide, iron, epoxide, presser sensor sticking agent and RTV siloxanes are formed.
13. multi-layer RF window as claimed in claim 1, wherein above-mentioned bond material are oxide glass.
14. a manufacturing is used for the method for the RF window of coupling radio frequency energy to plasma body reaction cavity, this method comprises at least:
One self-existent the first layer of one first dielectric materials is provided;
The one self-existent second layer of one second dielectric materials is provided, and this second dielectric materials is different from this first material; And
With a bond material in conjunction with this first layer to this second layer.
15. method as claimed in claim 14, wherein above-mentioned bond material are a sticking agent.
16. method as claimed in claim 14, wherein above-mentioned bond material are a stupalith.
17. method as claimed in claim 14, first and second wherein above-mentioned dielectric materials is an oxide ceramics, and this bond material is a monoxide glass, its glass formation temperature is lower than the melt temperature of this first and second dielectric materials, and this integrating step comprise combination this first and second layer in an assembly and this bond material be disposed at therebetween, and heat this assembly to being higher than the glass formation temperature and being lower than the temperature of these both melt temperatures.
18. method as claimed in claim 14, the first wherein above-mentioned dielectric materials comprises alum clay, this second dielectric materials is to be selected from wherein one of yttrium oxide and yttrium aluminum garnet, and this bond material comprises monoxide glass, and its glass formation temperature is lower than this alum clay and wherein one the melt temperature that is selected from yttrium oxide and yttrium aluminum garnet.
19. method as claimed in claim 14, wherein above-mentioned oxide glass form a free powder from composition powder group, this composition powder group is selected from: (1) Al
2O
3-SiO
2-CaO; (2) Al
2O
3-Y
2O
3-SiO
2(3) Al
2O
3-SiO
2-CaO; And composition thereof the cohort that forms.
20. a plasma process system, it comprises at least:
One plasma body reaction cavity; And
One multilayer dielectric wall of this plasma body reaction cavity, it comprises
One skin of one first dielectric materials;
One internal layer of one second dielectric materials is in the face of an inside of this plasma body reaction cavity; And
One middle layer of one bond material, in conjunction with this internal layer to this skin.
21. system as claimed in claim 20, wherein above-mentioned skin has a physical strength that is higher than this internal layer.
22. system as claimed in claim 20, wherein above-mentioned internal layer is can tolerate compared to this skin to the plasma process condition in plasma reaction chamber.
23. system as claimed in claim 20, first and second wherein above-mentioned dielectric materials is respectively pottery.
24. system as claimed in claim 20, wherein above-mentioned dielectric wall forms the radio frequency source that a RF window is used to be disposed at the outside contiguous dielectric wall of plasma reaction.
25. system as claimed in claim 24, wherein above-mentioned RF window comprises psychrophore.
26. system as claimed in claim 20, wherein above-mentioned dielectric wall comprises:
Several gas distribution channel are formed at one between this skin and this middle layer at the interface; And
Several gas injection holes are formed in this internal layer, and wherein above-mentioned system sees through this gas distribution conduits and this gas injection hole transmits one or more process gas to this plasma body reaction cavity.
27. system as claimed in claim 20, wherein above-mentioned bond material is for being selected from the not cohort of dragon (tm), epoxide, presser sensor sticking agent and RTV siloxanes composition of polyimide, iron.
28. a multi-layer RF window that is used for a plasma body reaction cavity, this RF window comprises at least:
One skin of one first dielectric materials; And
One internal layer of one second dielectric materials, it contacts this skin at this skin with the whole surf zone of this internal layer in fact.
29. RF window as claimed in claim 28, a middle layer that further comprises a bond material is disposed at this skin and is somebody's turn to do interior interlayer; Wherein above-mentioned internal layer combines with this skin by this middle layer.
30. being pottery and this second dielectric materials, multi-layer RF window as claimed in claim 28, the first wherein above-mentioned dielectric materials be quartz.
31. being pottery and this second dielectric materials, multi-layer RF window as claimed in claim 28, the first wherein above-mentioned dielectric materials be pottery.
32. multi-layer RF window as claimed in claim 28 further comprises psychrophore in wherein.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72192805P | 2005-09-29 | 2005-09-29 | |
| US60/721,928 | 2005-09-29 | ||
| US11/445,559 | 2006-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101495669A true CN101495669A (en) | 2009-07-29 |
Family
ID=40925405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800085484A Pending CN101495669A (en) | 2005-09-29 | 2006-09-22 | Bonded multi-layer RF window |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101495669A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241070A (en) * | 2013-06-24 | 2014-12-24 | 中微半导体设备(上海)有限公司 | Gas injection device used for inductively couple plasma chamber |
| CN104347339A (en) * | 2013-08-09 | 2015-02-11 | 中微半导体设备(上海)有限公司 | Heater for radio-frequency window in inductively coupled plasma chamber |
-
2006
- 2006-09-22 CN CNA2006800085484A patent/CN101495669A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241070A (en) * | 2013-06-24 | 2014-12-24 | 中微半导体设备(上海)有限公司 | Gas injection device used for inductively couple plasma chamber |
| CN104347339A (en) * | 2013-08-09 | 2015-02-11 | 中微半导体设备(上海)有限公司 | Heater for radio-frequency window in inductively coupled plasma chamber |
| CN104347339B (en) * | 2013-08-09 | 2017-04-05 | 中微半导体设备(上海)有限公司 | For the heater of RF window in inductively coupled plasma chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20070112188A (en) | Bonded multi-layer rf window | |
| US9340462B2 (en) | Transient liquid phase, pressureless joining of aluminum nitride components | |
| CN1945807B (en) | Apparatus for controlling temperature of a substrate | |
| US8092602B2 (en) | Thermally zoned substrate holder assembly | |
| TWI342899B (en) | Gas distribution system for improved transient phase deposition | |
| CN108550544B (en) | Electrostatic chuck having thermally isolated zones with minimal crosstalk | |
| CN104278254B (en) | Multi-plenum, dual-temperature showerhead | |
| CN104854693B (en) | monomer electrostatic chuck | |
| CN105264649B (en) | The light pipe window construction applied and handled for hot chamber | |
| KR101156038B1 (en) | Top panel and plasma processing apparatus using the same | |
| JP4959905B2 (en) | Electrostatic chuck having a porous region | |
| CN104823274A (en) | Substrate support assembly having metal bonded protective layer | |
| WO1998001893A1 (en) | Apparatus and method for multi-zone high-density inductively-coupled plasma generation | |
| US10910238B2 (en) | Heater pedestal assembly for wide range temperature control | |
| CN107230655A (en) | Dual zone type heater for corona treatment | |
| TWI399824B (en) | Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing | |
| CN101495669A (en) | Bonded multi-layer RF window | |
| WO2003046957A1 (en) | Heated vacuum support apparatus | |
| CN101320146A (en) | Hot pressing mechanism | |
| US20020112666A1 (en) | High density plasma chemical vapor deposition chamber | |
| US20230055541A1 (en) | Method of bonding silicon parts using silicon powder and high-frequency heating device | |
| TW202410251A (en) | Hybrid shaft assembly for thermal control in heated semiconductor pedestals | |
| KR100445669B1 (en) | The ceramic coating method of quartz surface | |
| CN108461441A (en) | Bogey and processing chamber | |
| CN106328471A (en) | Gas spraying head and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090729 |