CN101492294B - Dielectric adjustable microwave ceramic dielectric material and method of producing the same - Google Patents

Dielectric adjustable microwave ceramic dielectric material and method of producing the same Download PDF

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CN101492294B
CN101492294B CN2009100462688A CN200910046268A CN101492294B CN 101492294 B CN101492294 B CN 101492294B CN 2009100462688 A CN2009100462688 A CN 2009100462688A CN 200910046268 A CN200910046268 A CN 200910046268A CN 101492294 B CN101492294 B CN 101492294B
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dielectric
adjustable microwave
dielectric material
microwave ceramic
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翟继卫
张景基
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Dalian Dali Kaipu Technology Co., Ltd
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Tongji University
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Abstract

The present invention relates to the technical field of electronic materials and devices, and discloses a dielectric material for dielectric tunable microwave ceramics, and a preparation method thereof. The components of the dielectric material for dielectric tunable microwave ceramics are Ba1-xSrxTi1-ySiyO3, wherein x is between 0.1 and 0.9, and y is between 0.01 and 0.20. The dielectric material for dielectric tunable microwave ceramics has the advantages of compact microstructure, low dielectric constant, high dielectric tunable rate and high Q value, and is a material which can be used for tunable microwave devices.

Description

Dielectric adjustable microwave ceramic dielectric material and preparation method thereof
Technical field
The present invention relates to electronic material and device technology field, be specifically related to a kind of SiO 2The Ba of doping vario-property 1-xSr xTiO 3Microwave ceramic dielectric material, it has fine and close micro-structural, low dielectric constant, the high adjustable rate of dielectric and high Q value, is the material that can be used to the adjustable microwave device.
Background technology
Have high-k, low-dielectric loss, nonlinear dielectric constant is adjustable with and the Ba of the adjustable perovskite structure of Curie temperature 1-xSr xTiO 3Ferroelectric material aspect microwave adjustable device (as phase shifter, filter, variable capacitor and delay line etc.) obtain increasingly extensive concern, especially aspect microwave phase shifter especially at present research focus.But the BST ceramic material with high-k is difficult to satisfy the impedance matching and the high-power requirement of itself and driving source inside, and this has limited its application in the microwave adjustable device field greatly.Therefore, how to prepare both had low-k, high dielectric tunable characteristic, the material system that has high Q value again is technological difficulties.
At present, most researchers mainly forms composite construction by adding non-ferroelectric microwave dielectric material, thereby the ferroelectricity of dilution BST ceramic material to a certain degree reaches the reduction dielectric constant.Sengupta etc. have carried out systematic research and have applied for related U.S. patent the compound of BST and non-ferroelectric material MgO, though the dielectric constant of this composite material and loss have obtained reduction to a certain extent, but along with the increase of the compound content of MgO, the temperature dependent properties of its dielectric constant and dielectric tunable characteristic but sharply descend.This seminar is in early days at Ba 1-xSr xTiO 3-Mg 2TiO 4And Ba 1-xSr xTiO 3-MgAl 2O 4A few thing has been done in the composite ceramic material aspect, has obtained very big progress.Ion doping all is that the electron ceramic material modification is used always and one of the most effective means the most all the time, stoichiometric proportion or non-stoichiometric by different dopant ions mix, dopant ion is to enter in the lattice structure of crystalline material with different modes in various degree, all will cause the change of material microstructure, thereby effectively adjust and improve the correlated performance of material.Yet, SiO 2The Ba of stoichiometric proportion doping vario-property 1-xSr xTiO 3Relevant report is not seen in the research of microwave ceramic material as yet.
Summary of the invention
The purpose of this invention is to provide a kind of Ba 1-xSr xTi 1-ySi yO 3Dielectric adjustable microwave ceramic dielectric material and preparation method thereof.
Dielectric adjustable microwave ceramic dielectric material provided by the present invention, its composition is: Ba 1-xSr xTi 1-ySi yO 3, x=0.1 in the formula～0.9, y=0.01～0.20.The mol ratio of each corresponding element of digitized representation in the formula.
The preparation method of dielectric adjustable microwave ceramic dielectric material provided by the present invention specifically comprises the steps:
(1) adopts traditional electronic ceramic powder preparation technology,, select BaCO for use by solid reaction process 3, SrCO 3, TiO 2And SiO 2Be primary raw material, according to certain Ba 1-xSr xTi 1-ySi yO 3Molar ratio ingredient places nylon ball grinder with confected materials, adds zirconia ball and absolute ethyl alcohol or deionized water ball milling 20～24 hours, discharging oven dry back 1100 ℃～1250 ℃ pre-burning 2-4 hour, obtain Ba after the grinding 1-xSr xTi 1-ySi yO 3Powder.
(2) added zirconia ball and absolute ethyl alcohol or deionized water ball milling 20～24 hours in this powder, 200 mesh sieves are crossed in discharging oven dry back then.
(3) polyvinyl alcohol (PVA) of employing 8～10% carries out granulation as binding agent to above-mentioned powder, under 10～100MPa pressure, is pressed into the ceramic green sheet of required size size by the mould of different model.
(4) the ceramic green sheet through 550 ℃～600 ℃ row is sticking handle after, the pottery that obtains is carried out 1300 ℃～1500 ℃ (being incubated 2～4 hours) sintering processes, can obtain described microwave ceramic dielectric material.
Wherein, during ball milling, the mass ratio of zirconia ball and ball milling material is 1.2～1.5; The mass ratio of absolute ethyl alcohol or deionized water and ball milling material is 1.5～3.0.The ball milling material is meant the raw material of ball milling, is BaCO in step 1 3, SrCO 3, TiO 2And SiO 2Be the Ba of pre-burning in the raw material, step 2 1-xSr xTi 1-ySi yO 3Powder.
The present invention adopts traditional electronic ceramic technology, adopts SiO 2The stoichiometric proportion doping vario-property, development obtains can be used for the Ba of adjustable microwave device 1-xSr xTi 1-ySi yO 3Dielectric adjustable microwave ceramic dielectric material, it has following main feature:
(1) Curie temperature of this ceramic material system can be adjustable continuously in very wide scope with Ba/Sr and Ti/Si ratio, can require to adjust the structure and the performance of material system according to the working temperature of designed adjustable microwave device;
(2) by the variation of Ba/Sr and Ti/Si component ratio, the dielectric constant of ceramic medium material can be adjustable continuously between 50～2000, can obtain the material system of dielectric constant seriation, widened the range of application of material;
(3) have dielectric constant seriation, high adjustable rate and high Q value;
(4) its composition of this ceramic medium material is with Ba 1-xSr xTiO 3Xiang Weizhu has BaSiO simultaneously 3The generation of cenotype has excellent microwave dielectric property;
(5) adopt traditional electronic ceramic technology, technology is simple, and cost is low, the side effect of material system environment-protecting asepsis, and excellent performance is applicable to the exploitation and the design of adjustable microwave device.
Description of drawings
Fig. 1 is Ba 0.4Sr 0.6Ti 1-ySi yO 3The X-ray diffraction analysis collection of illustrative plates of (y=0.01,0.02,0.05,0.10,0.20) dielectric adjustable microwave ceramic dielectric material.
Fig. 2 is Ba 0.4Sr 0.6Ti 1-ySi yO 3The dielectric constant of (y=0.01,0.02,0.05,0.10,0.20) dielectric adjustable microwave ceramic dielectric material and the relation curve of loss and temperature.
Fig. 3 is Ba 0.4Sr 0.6Ti 1-ySi yO 3(y=0.01,0.02,0.05,0.10, the 0.20) dielectric constant of dielectric adjustable microwave ceramic dielectric material and the relation curve of electric field strength.
Embodiment
Embodiment 1 preparation Ba 0.4Sr 0.6Ti 1-ySi yO 3Dielectric adjustable microwave ceramic dielectric material
Respectively according to Ba 0.4Sr 0.6Ti 1-ySi yO 3The stoichiometric proportion of (y=0.01,0.02,0.05,0.10,0.20) takes by weighing a certain amount of BaCO 3(99.80%, Alfa Aesar China LTD.), SrCO 3(99.00%, Alfa Aesar China LTD.), TiO 2(99.90%, the high-new inorganic material in Foshan Co., Ltd) and SiO 2(99.99%, Chemical Reagent Co., Ltd., Sinopharm Group) raw material (so as table 1).
Table 1.Ba 0.4Sr 0.6Ti 1-ySi yO 3The proportioning of ceramic medium material
Figure G2009100462688D00031
Above-mentioned powder is placed nylon ball grinder, add zirconia ball and absolute ethyl alcohol or deionized water, ball milling 24 hours, discharging oven dry back was 1100 ℃～1250 ℃ pre-burnings 4 hours, powder after the grinding places nylon ball grinder, add zirconia ball and absolute ethyl alcohol or deionized water, ball milling 24 hours, discharging oven dry back powder is crossed 200 mesh sieves; According to traditional electronic ceramic technology, the polyvinyl alcohol (PVA) of employing 8% carries out granulation as binding agent, and under 10MPa pressure, dry method is pressed into diameter
Figure G2009100462688D00032
The cylinder of green sheet and 10mm * 5mm, 12mm * 6mm, 15mm * 7mm, 18mm * 8mm, after the sticking processing of 550 ℃ rows, sample is under air atmosphere, and sintering temperature is 1350 ℃, is incubated after 4 hours, obtains Ba 0.4Sr 0.6Ti 1-ySi yO 3(y=1,2,5,10,20mol%) ceramics sample.The ceramics sample that makes is carried out thing phase and microstructure analysis earlier, to its polishing both surfaces, quilt silver, carry out the dielectric property test behind the silver ink firing then, its relevant dielectric property see Table 2.
Table 2.Ba 0.4Sr 0.6Ti 1-ySi yO 3The relevant dielectric property of dielectric adjustable microwave ceramic dielectric material
Figure G2009100462688D00041
Embodiment B a 0.4Sr 0.6Ti 1-ySi yO 3The X-ray diffraction analysis collection of illustrative plates of (y=0.01,0.02,0.05,0.10,0.20) dielectric adjustable microwave ceramic dielectric material as shown in Figure 1, the result shows with Ba 1-xSr xTiO 3Xiang Weizhu has BaSiO simultaneously 3The generation of cenotype; Embodiment B a 0.4Sr 0.6Ti 1-ySi yO 3The dielectric constant of (y=0.01,0.02,0.05,0.10,0.20) dielectric adjustable microwave ceramic dielectric material and the relation curve of loss and temperature as shown in Figure 2, the result shows stoichiometric proportion doping SiO 2Suppress effectively and broadening dielectric peak, and the Curie peak is along with the increase of doping is moved to the low temperature direction; Embodiment B a 0.4Sr 0.6Ti 1-ySi yO 3(y=0.01,0.02,0.05,0.10, the 0.20) dielectric constant of dielectric adjustable microwave ceramic dielectric material and the relation curve of electric field strength as shown in Figure 3, test result shows that its dielectric tunable characteristic is all greater than 7.0%.
Embodiment 2 preparation Ba 0.9Sr 0.1Ti 1-ySi yO 3Dielectric adjustable microwave ceramic dielectric material
Respectively according to Ba 0.9Sr 0.1Ti 1-ySi yO 3The stoichiometric proportion of (y=0.01,0.02,0.05,0.10,0.20) takes by weighing a certain amount of BaCO 3, SrCO 3, TiO 2And SiO 2Raw material powder (as shown in table 3).
Table 3.Ba 0.9Sr 0.1Ti 1-ySi yO 3The proportioning of ceramic medium material
Above-mentioned powder is placed nylon ball grinder, add zirconia ball and absolute ethyl alcohol or deionized water, ball milling 20 hours, discharging oven dry back was 1100 ℃～1250 ℃ pre-burnings 4 hours, powder after the grinding places nylon ball grinder, add zirconia ball and absolute ethyl alcohol or deionized water, ball milling 20 hours, discharging oven dry back powder is crossed 200 mesh sieves; According to traditional electronic ceramic technology, the polyvinyl alcohol (PVA) of employing 10% carries out granulation as binding agent, and under 30MPa pressure, dry method is pressed into diameter
Figure G2009100462688D00051
The cylinder of green sheet and 10mm * 5mm, 12mm * 6mm, 15mm * 7mm, 18mm * 8mm, after the sticking processing of 600 ℃ rows, sample is under air atmosphere, and sintering temperature is 1500 ℃, is incubated after 4 hours, obtains Ba 0.9Sr 0.1Ti 1-ySi yO 3(y=0.01,0.02,0.05,0.10,0.20) ceramics sample.The ceramics sample that makes is carried out thing phase and microstructure analysis earlier, to its polishing both surfaces, quilt silver, carry out the dielectric property test behind the silver ink firing then.
Ba 0.9Sr 0.1Ti 1-ySi yO 3(y=0.01,0.02,0.05,0.10,0.20) dielectric adjustable microwave ceramic dielectric material is with Ba 1-xSr xTiO 3Xiang Weizhu has BaSiO simultaneously 3The generation of cenotype; Along with SiO 2The increase of doping, its dielectric peak is suppressed and broadening, and the Curie peak moves to the low temperature direction; Also has higher dielectric tunable characteristic in addition.
Embodiment 3 preparation Ba 0.1Sr 0.9Ti 1-ySi yO 3Dielectric adjustable microwave ceramic dielectric material
Respectively according to Ba 0.1Sr 0.9Ti 1-ySi yO 3The stoichiometric proportion of (y=0.01,0.02,0.05,0.10,0.20) takes by weighing a certain amount of BaCO 3, SrCO 3, TiO 2And SiO 2Raw material powder (as shown in table 4).
Table 4.Ba 0.1Sr 0.9Ti 1-ySi yO 3The proportioning of ceramic medium material
Figure G2009100462688D00052
Above-mentioned powder is placed nylon ball grinder, add zirconia ball and absolute ethyl alcohol or deionized water, ball milling 22 hours, discharging oven dry back was 1100 ℃～1250 ℃ pre-burnings 4 hours, powder after the grinding places nylon ball grinder, add zirconia ball and absolute ethyl alcohol or deionized water, ball milling 22 hours, discharging oven dry back powder is crossed 200 mesh sieves; According to traditional electronic ceramic technology, the polyvinyl alcohol (PVA) of employing 9% carries out granulation as binding agent, and under 100MPa pressure, dry method is pressed into diameter
Figure G2009100462688D00053
The cylinder of green sheet and 10mm * 5mm, 12mm * 6mm, 15mm * 7mm, 18mm * 8mm, after the sticking processing of 550 ℃ rows, sample is under air atmosphere, and sintering temperature is 1300 ℃, is incubated after 4 hours, obtains Ba 0.1Sr 0.9Ti 1-ySi yO 3(y=0.01,0.02,0.05,0.10,0.20) ceramics sample.The ceramics sample that makes is carried out thing phase and microstructure analysis earlier, to its polishing both surfaces, quilt silver, carry out the dielectric property test behind the silver ink firing then.
Ba 0.1Sr 0.9Ti 1-ySi yO 3(y=0.01,0.02,0.05,0.10,0.20) dielectric adjustable microwave ceramic dielectric material is with Ba 1-xSr xTiO 3Xiang Weizhu has BaSiO simultaneously 3The generation of cenotype; Along with SiO 2The increase of doping, its dielectric peak is suppressed and broadening, and the Curie peak moves to the low temperature direction; Also has higher dielectric tunable characteristic in addition.

Claims (5)

1. dielectric adjustable microwave ceramic dielectric material, its composition is: Ba 1-xSr xTi 1-ySi yO 3, x=0.1 in the formula～0.9, y=0.01～0.20, its composition of described dielectric adjustable microwave ceramic dielectric material is with Ba 1-xSr xTiO 3Xiang Weizhu has BaSiO simultaneously 3The generation of cenotype.
2. dielectric adjustable microwave ceramic dielectric material according to claim 1 is characterized in that the composition of described dielectric adjustable microwave ceramic dielectric material is Ba 0.4Sr 0.6Ti 1-ySi yO 3, y=0.01 in the formula～0.20.
3. the preparation method of dielectric adjustable microwave ceramic dielectric material as claimed in claim 1 or 2 comprises the steps:
(a) select BaCO for use 3, SrCO 3, TiO 2And SiO 2Be primary raw material, according to Ba 1-xSr xTi 1-ySi yO 3Molar ratio ingredient in the formula added zirconia ball and absolute ethyl alcohol or deionized water ball milling 20～24 hours, discharging oven dry back 1100 ℃～1250 ℃ pre-burning 2-4 hour, obtain Ba after the grinding 1-xSr xTi 1-ySi yO 3Powder;
(b) at Ba 1-xSr xTi 1-ySi yO 3Added zirconia ball and absolute ethyl alcohol or deionized water ball milling in the powder 20～24 hours, 200 mesh sieves are crossed in discharging oven dry back then;
(c) polyvinyl alcohol of employing 8～10% carries out granulation as binding agent to the powder that step (b) obtains, and under 10～100MPa pressure, is pressed into the ceramic green sheet through mould;
(d) the ceramic green sheet through 550 ℃～600 ℃ row is sticking handle after, the pottery that obtains is carried out 1300 ℃～1500 ℃ sintering processes, can obtain described dielectric adjustable microwave ceramic dielectric material.
4. as the preparation method of dielectric adjustable microwave ceramic dielectric material as described in the claim 3, it is characterized in that during ball milling, the mass ratio of zirconia ball and ball milling material is 1.2～1.5.
5. as the preparation method of dielectric adjustable microwave ceramic dielectric material as described in the claim 3, it is characterized in that during ball milling, the mass ratio of absolute ethyl alcohol or deionized water and ball milling material is 1.5～3.0.
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CN102491747B (en) * 2011-11-24 2013-02-06 中国计量学院 Preparation method of microwave ceramic dielectric material having layered perovskite structure
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312565A (en) * 2000-03-06 2001-09-12 株式会社村田制作所 Insulator ceramic composition
CN1316747A (en) * 2000-02-09 2001-10-10 Tdk株式会社 Dielectric ceramic composition, electronic device and its production method
CN1334569A (en) * 2000-07-21 2002-02-06 株式会社村田制作所 Dielectric ceramic composition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1316747A (en) * 2000-02-09 2001-10-10 Tdk株式会社 Dielectric ceramic composition, electronic device and its production method
CN1312565A (en) * 2000-03-06 2001-09-12 株式会社村田制作所 Insulator ceramic composition
CN1334569A (en) * 2000-07-21 2002-02-06 株式会社村田制作所 Dielectric ceramic composition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张栋杰等.非铁电压电极性微晶一维生长驱动力分析.《无机材料学报》.2004,第19卷(第2期),第307～312页. *

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