CN101482577A - Elastic projection pin measuring seat and manufacturing method thereof - Google Patents

Elastic projection pin measuring seat and manufacturing method thereof Download PDF

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Publication number
CN101482577A
CN101482577A CNA2008100009373A CN200810000937A CN101482577A CN 101482577 A CN101482577 A CN 101482577A CN A2008100009373 A CNA2008100009373 A CN A2008100009373A CN 200810000937 A CN200810000937 A CN 200810000937A CN 101482577 A CN101482577 A CN 101482577A
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CN
China
Prior art keywords
elastic projection
pin measuring
measuring seat
wafer
line layer
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Pending
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CNA2008100009373A
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Chinese (zh)
Inventor
陆颂屏
黄崑永
郑宇凯
陈孟祺
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FOPO ELECTRONICS Co Ltd
FuPo Electronics Corp
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FOPO ELECTRONICS Co Ltd
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Priority to CNA2008100009373A priority Critical patent/CN101482577A/en
Publication of CN101482577A publication Critical patent/CN101482577A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention provides a flexible cam needle measurement seat and manufacture method thereof. The flexible cam needle measurement seat is produced by a wafer bumping process and the used probe structure is replaced by the flexible cam structure, thus the manufacture method is more convenient and saves time and height of the flexible cam is same with better coplanarity and the flexible cam position is in full according with the position of each needle measurement point, thereby preventing the bad measurement due to deflection of traditional probe and the flexible cam needle measurement seat of narrow pitch is produced by the wafer bumping process to measure the electrical property of the wafer of narrow pitch.

Description

Elastic projection pin measuring seat and manufacture method thereof
Technical field
Relevant a kind of elastic projection pin measuring seat of the present invention and manufacture method thereof, purpose is being made pin measuring seat by wafer bumps processing procedure (Wafer Bumping Process), replaces the probe structure of practising the probe that has by the structure of elastic projection.
Background technology
In semiconductor industry, the production of integrated circuit mainly is divided into three phases: the encapsulation (package) of the manufacturing of silicon wafer, the making of integrated circuit and integrated circuit etc.The encapsulation of integrated circuit is exactly a final step of finishing the integrated circuit finished product.The purpose of encapsulation be to provide wafer and printed circuit board (PCB) (Printed Circuit Board, PCB) or and other assembly between the media of electric connection, and provide the function of protecting wafer.
After the wafer manufacturing is finished, the stage that just need enter wafer sort is to guarantee its function, wafer sort is to utilize tester table and probe (Probe Card) to come each wafer on the test wafer, is produced according to design specification with electrical specification and the usefulness of guaranteeing wafer.Probe is in SIC (semiconductor integrated circuit) wafer (wafer) test, particularly very crucial in the wafer scale volume production test link of high speed (High-speed) electronic package, its be applied in integrated circuit (IC) as yet the encapsulation before, naked crystalline substance is done the function test with probe, filter out defective products, the encapsulation engineering after carrying out again.Test process at first on the tester table with the wafer orientation on the wafer, again probe is fixed on the tester table so that the pin measuring point (weld pad) on the wafer is aimed at the probe of probe, and with contact.
See also Fig. 1 to Fig. 3, be the vertical view and the sectional view thereof of at present common on the market epoxy resin probe (Epoxyprobe card).It is to form a hollow to sentence the insulated probe seat 14 of detecting circuit 121 that testing wafer, complex lead 13 be electrically connected at this circuit board 12, a ring-type and be located at the inboard and the plural probe (Probe needle) 15 of this circuit board 12 and be welded in the end of this lead 13 separately that probe 1 includes a circuit board 12.This probe 15 is that the resin 16 by insulation is fixed on this probe base 14, and electrically contacts with the pin measuring point 21 (weld pad or metal coupling) of wafer 2 respectively, with to wafer 2 input signals and receive signal.
But practising has probe to have following shortcoming:
1, the making of its probe auxiliary probe that will bend angle that utilizes that microscope sees through light shield is put probe in the opposite position of wafer pin measuring point (weld pad or metal coupling) and be attached on the epoxy resin with manual type, then make probe on probe and be connected pasting the preparation journey with lead, its manufacturing process is complicated, and it is higher to put fraction defective with manual type.
2, use a period of time probe easily crooked, shorten because of wearing and tearing, when test, cause pin measuring point (weld pad or metal coupling) unfilled corner or loose contact easily, because of this probe when testing, damage is caused to pin measuring point (weld pad or metal coupling) easily in the tip of probe, and loose contact easily between sharp-pointed probe and the pin measuring point (weld pad or metal coupling), and cause erroneous judgement.
3, if when probe fracture needs repairing, from being attached on the epoxy resin broken needle to be taken out earlier, put new probe then again and fix with epoxy resin again, then on probe, make probe and is connected, keep in repair difficult with lead.And may wear to a certain degree and need make new probe again, manufacturing cost is high and the friendship phase is long (from being designed into about about 10~12 working days of completion).
Yet 4 along with the wafer function is constantly strengthened, and the continuous tinyization high-density circuit of outward appearance contact is inevitable trend, relative tests also just more and more complicated difficulty for it, can't cooperate the probe setting of making thin space and practise the probe card technology that has, and be easy to generate the signal interactive interference and the situation of distortion, can't be applicable to the wafer of high-density circuit contact, and gradually face bottleneck for integrated circuit testing electrical property with thin space weld pad or metal coupling.
Summary of the invention
Fundamental purpose of the present invention is promptly providing a kind of elastic projection pin measuring card and manufacture method thereof, and purpose is being made pin measuring seat by wafer bumps processing procedure (Wafer Bumping Process), replaces by the structure of elastic projection and practises the probe structure that has.
Particularly, the present invention has following effect:
1, makes the probe of elastic projection with the wafer bumps processing procedure, have goodish coplanarity, that is the height of all elastic projections is on same level as probe.
2, make the probe of elastic projection as probe with the wafer bumps processing procedure, each pin point position of the seated position of its all elastic projections and wafer is in full accord, and the probe deflection that does not have conventional probe card causes the test condition of poor to take place.
When 3, elastic projection pin measuring seat is impaired, directly whole wafer done replacing, do not need conventional probe card to put probe with manual type, therefore in the maintenance comparatively convenient with save time, relative cost is also lower.
4, make a slice 6 " or 8 " wafer just can output tens of even hundreds of s' elastic projection pin measuring seat, if interim elastic projection is impaired when needing the new probe base of making, can finish the making of new pin measuring seat immediately at short notice.
5, can make the elastic projection of thin space (below 20um, littler) of the wafer bumps processing procedure than the limit 25um of conventional probe card.
Description of drawings
Fig. 1 is for practising the structural representation that probe is arranged;
Fig. 2 is for practising the user mode synoptic diagram that probe and wafer are arranged;
Fig. 3 is for practising the structural perspective that probe is arranged;
Fig. 4 is the structural representation of pin measuring seat among the present invention;
Fig. 5 is the user mode synoptic diagram of pin measuring seat among the present invention and wafer;
Fig. 6 is the structural representation of pin measuring seat among the present invention and circuit board;
Fig. 7 is another structural representation of pin measuring seat among the present invention;
Fig. 8 is a structural representation again of pin measuring seat among the present invention;
Fig. 9 A~I is for making the flowage structure synoptic diagram of pin measuring seat among the present invention;
Figure 10 A~C is for making another flowage structure synoptic diagram of pin measuring seat among the present invention;
Figure 11 A~E is for making a flow process structural representation again of pin measuring seat among the present invention.
[figure number explanation]
Probe 1 circuit board 12
Detecting circuit 121 leads 13
Probe base 14 probes 15
Resin 16 wafers 2
Pin measuring point 21 pin measuring seats 3
Elastic projection 31 is reshuffled weld pad 32
Conductive layer 33 reconfiguration line layer 34
Bottom 35 circuit boards 4
Detecting circuit 41 routings 42
Base material 5 first photosensitive material layers 51
Line layer 52 photoresistances 53
Opening 531 second photosensitive material layers 54
Embodiment
Elastic projection pin measuring seat of the present invention and manufacture method thereof, this pin measuring seat 3 is Silicon Wafer or monox wafer, and this pin measuring seat 3 includes at least: plural elastic projection 31 and reshuffle weld pad 32, as Fig. 4 and shown in Figure 5, wherein, each elastic projection 31 is located on the pin measuring seat 3, this elastic projection 31 is the material of low poplar formula coefficient (less than 500Mpa), and each elastic projection 31 is corresponding with each pin measuring point (weld pad or metal coupling) 21 formation minute surfaces of wafer 2, establish conductive layer 33 on the weld pad 32 and respectively reshuffle, the material of this conductive layer 33 can be gold.
Please consult shown in Figure 6 simultaneously, this pin measuring seat 3 is arranged on the circuit board 4, on this circuit board 4 and be provided with plural number detecting circuit 41, respectively reshuffling weld pad 32 constitutes elastic projection 31 and detects being connected of circuit 41, among the embodiment as shown in the figure, respectively reshuffling weld pad 32 is connected by routing 42 with detecting circuit 41, be connected by reconfiguration line layer 34 with each elastic projection 31 and respectively reshuffle weld pad 32, replace the structure that habit has probe with elastic projection 31, make each elastic projection 31 be able to contact with each pin measuring point (weld pad or metal coupling) 21 of wafer 2, with to wafer 2 input signals and receive signal, and then finish test, be produced with electrical specification and the usefulness of guaranteeing wafer according to design specification; Certainly, also can further be provided with conductive layer 33 in each elastic projection 31 top, as shown in Figure 7, this conductive layer 33 is located at reconfiguration line layer 34 tops that are covered in elastic projection 31, and this conductive layer 33 can be identical material (for example can be gold) with this pin measuring point (weld pad or metal coupling), can avoid conductive layer 33 excessive wears, increase the service life; Moreover, visual test need improve the height of elastic projection, as shown in Figure 7, can further be provided with a bottom 35 31 times in each elastic projection, perhaps as shown in Figure 8, each elastic projection can be provided with corresponding bottom 35 for 31 times, to improve the height of each elastic projection 31, certainly, the material of this bottom 35 can be used the material identical or inequality with elastic projection 31.
And the manufacture method of elastic projection pin measuring seat among the present invention, it includes the following step at least:
Steps A, provide a base material 5, this base material 3 can be Silicon Wafer or monox wafer, and on this base material 5 coating first photosensitive material layer 51, this first photosensitive material layer 51 can be for the material of low poplar formula coefficient (less than 500Mpa), shown in Fig. 9 A.
Step B, after exposing, develop on this base material 5, and in addition slaking or sclerosis is to form and the mutual corresponding plural elastic projection 31 of each pin measuring point of wafer, shown in Fig. 9 B.
Step C, on this base material 5 deposition (can include evaporation or sputtering way) conducting metal line layer 52, this line layer 52 is covered on each elastic projection 31, the material of this line layer 52 can be for the combination of conducting metals such as chromium, copper, nickel, titanium, titanium-tungsten or gold or above material, shown in Fig. 9 C.
Step D, on this line layer 52 coating photoresistance 53, and expose, develop, make these line layer 52 corresponding formation reshuffle formation opening 531 in weld pad 32 places, shown in Fig. 9 D.
Step e, form conductive layer 33 on opening 531, it more includes step e 1 and E2, and this step e 1 is electroplated in opening 531 places to form conductive layer 33, the material of this conductive layer 33 can be gold, shown in Fig. 9 E, and this step e 2 removes the photoresistance on the line layer 52, shown in Fig. 9 F.
Step F, line layer 52 is formed reconfiguration line layer 34, it more includes step F 1 and F2, this step F 1 is coated with photoresistance 53 on this line layer 52, shown in Fig. 9 G, this step F 2 is then exposed, development, etching, shown in Fig. 9 H, after again photoresistance 53 being removed, then form reconfiguration line layer 34, shown in Fig. 9 I, this reconfiguration line layer 34 is in order to connect elastic projection 31 and to reshuffle weld pad 32, to form a pin measuring seat 3 structures.
Moreover, utilize exposure among this step D, develop and further to form opening 531 in each elastic projection 31 top, shown in Figure 10 A, B, carry out step e again in each elastic projection 31 and reshuffle and form conductive layer 33 on the opening 531 of weld pad 32, carry out step F afterwards more in regular turn, pin measuring seat 3 structures of being finished are then shown in Figure 10 C, in each elastic projection 31 and reshuffle and be formed with conductive layer 33 on the weld pad 32.
In addition, be depicted as another embodiment of the present invention as Figure 11 A, between this steps A and step B, can further include a step G and step H, this step G exposes on the base material 5 that is provided with first photosensitive material layer 51, develop, slaking, to form at least one bottom 35, shown in Figure 11 B, this step H is coating second photosensitive material layer 54 on base material 51 then, this second photosensitive material layer 54 also covers on this bottom 35, shown in Figure 11 C, certainly this first, second photosensitive material layer 51,54 can be identical material or unlike material, carry out step B afterwards again, then be formed with plural elastic projection 31, shown in Figure 11 D, carry out step C~F more in regular turn in these bottom 35 tops, pin measuring seat 3 structures of being finished, then shown in Figure 11 E, then be formed with bottom 35 in each elastic projection 31 below, with the height of each elastic projection 31 of suitable raising.
The present invention has technology to have following advantage compared to habit:
1, makes the probe of elastic projection with the wafer bumps processing procedure, have goodish coplanarity, that is the height of all elastic projections is on same level as probe.
2, make the probe of elastic projection with the wafer bumps processing procedure as probe, each pin point position of the seated position of its all elastic projections and wafer is in full accord, the probe deflection that does not have conventional probe card causes the test condition of poor to take place, and the positional precision of elastic projection maintains forever ± 2um in, and the probe location precision of conventional probe card is about ± 3~5um, uses that probe can shorten because of wearing and tearing after a period of time, chap and the crooked deterioration in accuracy that causes.
When 3, elastic projection pin measuring seat is impaired, directly whole wafer done replacing, do not need conventional probe card to put probe with manual type, therefore in the maintenance comparatively convenient with save time, relative cost is also lower.
4, use the resilient material of low poplar formula coefficient (less than 500Mpa) to make elastic projection, make this elastic projection have elasticity, can compensate the difference in height of the pin measuring point (weld pad or metal coupling) of wafer to be measured, to reduce the contact impedance of elastic projection and pin measuring point.
5, can avoid the conductive layer excessive wear simultaneously in elastic projection and the conductive layer of reshuffling formation same thickness on the weld pad, increase the service life; The conductive layer of pin measuring point on the wafer (weld pad or metal coupling) and elastic projection top all forms with plating mode in addition, form the contact of identical material (gold), contact area is bigger than the probe of conventional probe card, because of surface of contact is identical material (gold), contact impedance is low, and the surface is difficult for the surface of oxidation and pin measuring point not easy to wear (weld pad or metal coupling).
6, make a slice 6 " or 8 " wafer just can output tens of even hundreds of s' elastic projection pin measuring seat, if interim elastic projection is impaired when needing the new probe base of making, can finish the making of new pin measuring seat immediately at short notice.
7, can make the elastic projection of thin space (below 20um, littler) of the wafer bumps processing procedure than the limit 25um of conventional probe card.
Technology contents of the present invention and technical characterstic the sixth of the twelve Earthly Branches disclose as above, yet the personage who is familiar with this technology still may do various replacement and the modifications that do not deviate from this case invention spirit based on announcement of the present invention.Therefore, protection scope of the present invention should be not limited to those disclosed embodiments, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim.

Claims (15)

1, a kind of elastic projection pin measuring seat, it includes at least:
The plural number elastic projection, each elastic projection is located on the pin measuring seat, and each elastic projection is corresponding with each pin measuring point formation minute surface of wafer;
Plural number is reshuffled weld pad, and plural number is reshuffled weld pad and is connected with each elastic projection.
2, elastic projection pin measuring seat according to claim 1, wherein this pin measuring seat is arranged on the circuit board, on this circuit board and be provided with plural number detecting circuit, constitutes elastic projection and detects being connected of circuit and respectively reshuffle weld pad.
3, elastic projection pin measuring seat is according to claim 1 wherein respectively reshuffled weld pad and is connected by reconfiguration line layer with each elastic projection.
4, elastic projection pin measuring seat according to claim 1, wherein this pin measuring seat is made on Silicon Wafer or monox wafer.
5, elastic projection pin measuring seat is according to claim 1 wherein respectively reshuffled on the weld pad or conductive layer is established in the elastic projection top, and the material of this conductive layer can be gold.
6, elastic projection pin measuring seat according to claim 1, wherein each elastic projection below further is provided with bottom.
7, a kind of manufacture method of elastic projection pin measuring seat, it includes the following step at least:
A, provide a base material, and on this base material coating first photosensitive material layer;
B, on this base material, expose, develop, to form and the mutual corresponding plural elastic projection of each pin measuring point of wafer;
C, on this base material the deposition one conducting metal line layer, this line layer is covered on each elastic projection;
D, on this line layer, be coated with photoresistance, and expose, develop, the corresponding formation of this line layer is reshuffled in the weld pad place form opening;
E, on opening, form conductive layer;
F, line layer is formed reconfiguration line layer, to form a pin measuring seat structure.
8, as the manufacture method of elastic projection pin measuring seat as described in the claim 7, wherein, this step e further includes the following step:
E1, electroplate to form conductive layer in opening part;
E2, the photoresistance on the line layer is removed.
9, as the manufacture method of elastic projection pin measuring seat as described in claim 7 or 8, wherein, this step F further includes the following step:
F1, on this line layer, be coated with photoresistance;
F2, expose, development, etching, after again photoresistance being removed, then form reconfiguration line layer.
10, as the manufacture method of elastic projection pin measuring seat as described in the claim 7, wherein, after exposing, develop among this step B, and slaking or this plural number elastic projection that hardens in addition.
11, as the manufacture method of elastic projection pin measuring seat as described in the claim 7, wherein, this step C utilizes evaporation or sputtering way to form the line layer of conducting metal.
12, as the manufacture method of elastic projection pin measuring seat as described in the claim 7, wherein, can further form opening among this step D in each elastic projection top.
13, as the manufacture method of elastic projection pin measuring seat as described in the claim 12, wherein, can be further in this step e in each elastic projection and reshuffle on the opening of weld pad and form conductive layer.
14, as the manufacture method of elastic projection pin measuring seat as described in the claim 7, wherein, can further include a step G between this steps A and the step B, this step G exposes, develops on this base material, to form at least one bottom.
15, as the manufacture method of elastic projection pin measuring seat as described in the claim 14, wherein, can further include a step H between this step G and the step B, this step H is coated with second photosensitive material layer on base material, and this second photosensitive material layer also covers this bottom.
CNA2008100009373A 2008-01-08 2008-01-08 Elastic projection pin measuring seat and manufacturing method thereof Pending CN101482577A (en)

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Application Number Priority Date Filing Date Title
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109782031A (en) * 2018-12-27 2019-05-21 上海华岭集成电路技术股份有限公司 A kind of method that the high and low temperature test environment replaces probe card automatically
CN109839522A (en) * 2017-11-24 2019-06-04 中华精测科技股份有限公司 Probe card device and its signal converting module
CN109839521A (en) * 2017-11-24 2019-06-04 中华精测科技股份有限公司 Probe card device and its signal transmission module
CN110118883A (en) * 2018-02-07 2019-08-13 中华精测科技股份有限公司 Probe card device and its signal Transmission Part

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109839522A (en) * 2017-11-24 2019-06-04 中华精测科技股份有限公司 Probe card device and its signal converting module
CN109839521A (en) * 2017-11-24 2019-06-04 中华精测科技股份有限公司 Probe card device and its signal transmission module
CN109839521B (en) * 2017-11-24 2021-05-14 中华精测科技股份有限公司 Probe card device and signal transmission module thereof
CN110118883A (en) * 2018-02-07 2019-08-13 中华精测科技股份有限公司 Probe card device and its signal Transmission Part
CN109782031A (en) * 2018-12-27 2019-05-21 上海华岭集成电路技术股份有限公司 A kind of method that the high and low temperature test environment replaces probe card automatically

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Open date: 20090715