CN101471203B - Flexible electrostatic actuator - Google Patents

Flexible electrostatic actuator Download PDF

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Publication number
CN101471203B
CN101471203B CN2009100059127A CN200910005912A CN101471203B CN 101471203 B CN101471203 B CN 101471203B CN 2009100059127 A CN2009100059127 A CN 2009100059127A CN 200910005912 A CN200910005912 A CN 200910005912A CN 101471203 B CN101471203 B CN 101471203B
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flexible membrane
electrostatic actuator
electrode
flexible
base portion
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CN101471203A (en
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戴维·E·道施
斯考特·H·古德温
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Research Triangle Institute
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Abstract

The invention claims an electrostatic actuator, having a base (10) including a first electrode (20), and a flexible membrane (50) including at least two material layers of different materials in contact with each other, wherein at least one of the material layers includes a second electrode (40) electrically isolated from the first electrode; the flexible membrane includes a fixed end where it is connected to the base and a free end opposite the fixed end and separated from the base; the free end of the flexible membrane is configured to move relative to the base under electrostatic force; the electrostatic actuator further includes non-infiltration compound arranged on at least one surface of an upper surface of the flexible membrane, a lower surface of the flexible membrane and an upper surface of the base.

Description

Flexible electrostatic actuator
The application be that April 25, application number in 2005 are 200580017738.8 the applying date, name is called the dividing an application of application for a patent for invention of " flexible electrostatic actuator ".
The cross reference of related application
The application relates to and the name that requires to submit on April 23rd, 2004 is called " ReleasingStructures (releasing structure) ", sequence number is No 60/564; 594 U.S. Provisional Application No., the full content of this provisional application is incorporated into this by reference.The application relates to and the name that requires to submit on April 23rd, 2004 is called " Electrostatic Valve withNon-Wetting Layer (the static valve with non-infiltration layer) ", sequence number is No60/564; 580 U.S. Provisional Application No., the full content of this provisional application is incorporated into this by reference.The application relates to and the name that requires to submit on April 23rd, 2004 is called " Flow Control for Higher Operating Pressures (being used for the flow control of higher operating pressure) ", sequence number is No 60/564; 573 U.S. Provisional Application No., the full content of this provisional application is incorporated into this by reference.The application relates to and the name that requires to submit on April 23rd, 2004 is called " Strong and Flexible Valve Closing forFlexible Electrostatic Film (the strong flexible valve of closing for the flexible electrostatic film) ", sequence number is No 60/564; 572 U.S. Provisional Application No., the full content of this provisional application is incorporated into this by reference.The application relates to and the name that requires to submit on April 23rd, 2004 is called " Higher Operating Voltages for Flexible Film Actuators (higher operation voltage that is used for the flexible membrane exciter) ", sequence number is No 60/564; 571 U.S. Provisional Application No., the full content of this provisional application is incorporated into this by reference.The application relates to Patent No 6,236,491, and the full content of this patent is incorporated into this by reference.The application relates to United States Patent(USP) No. 6,456,420, and the full content of this patent is incorporated into this by reference.
Technical field
The present invention relates to micro electronmechanical exciter structure, and relate more specifically to little exciter structure that processes of static excitation.
Background technology
The progress of thin film technique makes complicated integrated circuit be able to development.This semiconductor technology is adjusted forms MEMS (MEMS) structure.Form a lot of MEMS devices not of the same race, comprised microsensor, miniature gears, micro motor and other micro-device that manufactures and designs.For example, microcantilever has been used for applying rotatory mechanical force to rotate micro-machined spring and gear.Use electromagnetic field to drive micro motor.Use piezoelectric forces to come controllably to move micro-machined structure.The controlled thermal expansion of exciter or other MEMS parts has been used to be formed for driving the power of microdevice.
The flexible complex electrostatic actuator generally includes the flexible complex of being made by flexible electrode and insulator.Flexible complex is attached to the substrate that comprises fixed electrode also can be towards substrate deflection under electrostatic force.Insulator is arranged between flexible complex and the substrate to avoid the short circuit of flexible electrode and fixed electrode.Through between flexible electrode and fixed electrode, applying voltage, flexible complex is pulled to substrate through electrostatic attraction.When not having voltage, normally the stress in the flexible complex curls flexible complex and away from substrate.The application of flexible complex exciter comprises circuit breaker, minitype actuator, electric switch and the variable radio frequency capacitor of gas or fluid valve, optical shutter, radio-frequency phase shifter, infrared detector.
United States Patent(USP) No. 6,236 has been shown, 491 conventional exciter among Fig. 1.Exciter wherein comprises fixed complex 130 and flexible complex 50.Fixed complex 130 comprises substrate 10, fixed electrode 20 and insulated substrate body 30.The flexible complex 50 that comprises flexible electrode 40 places fixed complex 130 tops, and comprises standing part 70, mid portion 80 and end portion 100.Standing part 70 is attached to following substrate 10 or intermediate layer basically.Mid portion 80 extends and under the situation that does not apply electrostatic force, keeps in position from standing part 70, thereby limits air gap 120 between plane surface below and the mid portion 80.
When accomplishing exciter, mid portion 80 all discharges from following fixed complex 130 with end portion 100.End portion 100 moves freely in operation, curl and away from following plane surface and change and its spacing.In case flexible complex 50 bendings, mid portion 80 can be curled towards following plane surface, curled, perhaps keep with it constant spacing away from following plane surface.
On cross section, flexible complex 50 can have the multilayer that comprises at least one electrode layer 40, and can comprise that biasing layer is mechanically to strengthen above the flexible complex part to standing part 70.The selection of layout and institute's materials used of the thickness of the number of layer, layer, layer can be chosen as make flexible complex can curl towards following microelectronic substrate electrode, away from following microelectronic substrate electrode ground curl, perhaps keeping parallelism with it.
Flexible complex 50 generally includes polymer film 60, flexible electrode 40 and another polymer film 62.After the releasing layer 34 that when remove making this structure, uses, different thermal coefficient of expansion mechanically is biased to mid portion 80 and end portion 100 and curls and away from following surface 32 between each layer of flexible complex 50.End portion 100 can be curled with variable or constant radius of curvature.
Because mid portion and end portion are constructed similarly, different thermal coefficient of expansions tends to make mid portion to curl between electrode 40 and the polymer film.Yet, can setover control structure so that offset the curling tendency of mid portion after removing releasing layer and keep mid portion in position to be used as at the extra play that applies polymer film, metal or other material on the second layer polymer film alternatively.Perhaps, can apply natural stress to strengthen curling tendency and to increase distance between flexible complex and the substrate surface to material.
Although conventional exciter is very exquisite, also have the reliability and the performance of a lot of problems affect exciters.These problems that detail below are able to solve in each embodiment of the present invention.
Summary of the invention
A target of the present invention provides a kind of exciter of under the operating voltage condition that reduces, closing, and the said operating voltage that reduces is unlikely to cause dielectric breakdown in the insulating material of exciter.
Another target of the present invention provides a kind of exciter, and its flexible membrane structurally strengthens to keep closing with respect to pressure fluid.
Another target of the present invention provides a kind of exciter, and it is closed voltage and for the given institute fluid pressure that applies, is lowered, and therefore unlikelyly in the insulating material of exciter, causes dielectric breakdown.
Another target of the present invention is to reduce the flexible membrane that foreign matter is adhered to exciter, and therefore flexible membrane more predictable motion under electric biasing is provided.
Another target of the present invention is the zone of reducing local high electric field in the exciter, and therefore unlikelyly in the insulating material of exciter, causes dielectric breakdown.
These provide with other target in an embodiment of the present invention.
In an exemplary embodiment, a kind of electrostatic actuator is provided, it has the base portion that comprises first electrode, and has flexible membrane, and this flexible membrane comprises at least two material layers of contacted different materials each other.At least one material layer comprises second electrode of isolating with first electrode electricity.Flexible membrane comprises the anchor portion that is connected to base portion and the free end opposite with anchor portion.The free end of flexible membrane constitutes under electrostatic force and moves with respect to base portion.This electrostatic actuator also comprises upper surface at least one lip-deep non-infiltration compound wherein of lower surface and the base portion of the upper surface that is located at flexible membrane, flexible membrane.
In another exemplary embodiment, a kind of electrostatic actuator is provided, it has the base portion that comprises first electrode, and has flexible membrane, and this flexible membrane comprises at least two material layers of contacted different materials each other.At least one material layer comprises second electrode of isolating with first electrode electricity.Flexible membrane comprises the anchor portion that is connected to base portion and the free end opposite with anchor portion.As the part of flexible membrane, reinforcement is arranged on the flexible membrane away from anchor portion.
In another exemplary embodiment, a kind of electrostatic actuator is provided, it has the base portion that comprises first electrode, and has flexible membrane, and this flexible membrane comprises at least two material layers of contacted different materials each other.At least one material layer comprises second electrode of isolating with first electrode electricity.Flexible membrane comprises the anchor portion that is connected to base portion and the free end opposite with anchor portion.Electrostatic actuator comprises and extends through base portion and along the elongated orifices of extending away from the direction of anchor portion.
In another exemplary embodiment, a kind of electrostatic actuator is provided, it has the base portion that comprises first electrode, and has flexible membrane, and this flexible membrane comprises at least two material layers of contacted different materials each other.At least one material layer comprises second electrode of isolating with first electrode electricity.Flexible membrane comprises the anchor portion that is connected to base portion and the free end opposite with anchor portion.First electrode of base portion is at an end of second electrode of extend through flexible membrane on the direction of anchor portion.
In another exemplary embodiment, a kind of electrostatic actuator is provided, it has the base portion that comprises first electrode, and has flexible membrane, and this flexible membrane comprises at least two material layers of contacted different materials each other.At least one material layer comprises second electrode of isolating with first electrode electricity.Flexible membrane comprises the anchor portion that is connected to base portion and the free end opposite with anchor portion.Flexible membrane comprises and is configured to the periphery or the side cutout (cutout) that communicate with flexible membrane inside.
In another exemplary embodiment, a kind of electrostatic actuator is provided, it has the base portion that comprises first electrode, and has flexible membrane, and this flexible membrane comprises at least two material layers of contacted different materials each other.At least one material layer comprises second electrode of isolating with first electrode electricity.Flexible membrane comprises the anchor portion that is connected to base portion and the free end opposite with anchor portion.Exciter has the non-infiltration compound at least one that is arranged among flexible membrane upper surface, flexible membrane lower surface and the base portion upper surface.
Be to be understood that aforementioned general description of the present invention and following detailed all are exemplary, but not be for restriction of the present invention.
Description of drawings
With reference to understanding the present invention better below in conjunction with the detailed description of accompanying drawing, be easy to obtain therefore that the present invention understands more completely and a lot of attendant advantages, in the accompanying drawings:
Fig. 1 is the schematic side elevation that conventional micromechanical actuator is shown;
Fig. 2 is the schematic side elevation that illustrates according to micromechanical actuator of the present invention, and this exciter utilizes staged to reduce the slit between flexible membrane and the stationary substrate layer;
Fig. 3 is the perspective schematic view that illustrates according to micromechanical actuator of the present invention, and this exciter comprises reinforcement;
Fig. 4 A is the perspective schematic view that illustrates according to micromechanical actuator of the present invention, and this exciter comprises the taper valve opening;
Fig. 4 B is the perspective schematic view that illustrates according to micromechanical actuator of the present invention, and this exciter comprises elongated valve opening;
Fig. 5 is the perspective schematic view that illustrates according to micromechanical actuator of the present invention, and this exciter comprises the deflection piece on the valve opening;
Fig. 6 is the schematic, exploded that illustrates according to micromechanical actuator of the present invention, and this exciter comprises the deflection piece on the valve opening;
Fig. 7 is the schematic side elevation that illustrates according to micromechanical actuator of the present invention, and this exciter comprises the non-infiltration layer on flexible membrane and the stationary substrate layer;
Fig. 8 A is the schematic side elevation that conventional micromechanical actuator is shown, and wherein shows local electric field and strengthens point;
Fig. 8 B is the schematic side elevation that illustrates according to micromechanical actuator of the present invention, has wherein shifted local electric field and has strengthened point;
Fig. 8 C is the schematic top view that illustrates according to toothing of the present invention, and this toothing connects flexible membrane and stationary substrate layer;
Fig. 9 is the SEM microphoto that illustrates according to toothing of the present invention;
Figure 10 is the perspective schematic view that illustrates according to micromechanical actuator of the present invention, and this exciter comprises the variation on the flexible membrane downside surface;
Figure 11 A is the schematic side elevation that illustrates according to micromechanical actuator of the present invention, and this exciter comprises the electric switch contact by the micromechanical actuator contact; With
Figure 11 B is the schematic side elevation that illustrates according to micromechanical actuator of the present invention, and this exciter forms the optics by this micromechanical actuator excitation.
Embodiment
Referring now to accompanying drawing, wherein same Reference numeral is at the sensible same or corresponding parts of institute's drawings attached acceptance of the bid, and various aspects of the present invention are described through following illustrative embodiment of the present invention.
" operating voltage " of exciter is commonly referred to as and puts between fixed electrode and the flexible electrode (such as the electrode among Fig. 2 20,40) with the electromotive force of closing exciter and limited " beginning the voltage of leaving behind " usually, and " beginning the voltage of leaving behind " refers to the electromotive force that applies to begin to close.More specifically, beginning " leaving behind " voltage is pulled to flexible complex 50 with fixed complex 130 and contacts.After beginning contact, can use lower voltage to come little by little remainder with flexible complex 50 to be pulled to and contact, thereby close exciter with the for example mode of slide fastener shape with fixed complex 130.
In one embodiment of the invention, as shown in Figure 2, through at least a portion slit 120 away from end portion 100 between electrode 20 and 40 is narrowed down, can reduce the operating voltage of exciter.In this embodiment, deposit and composition releasing layer 34 (for the purpose of example illustrate and the exciter of working in do not have), make the shape of downside surface of shape copying flexible complex 50 of releasing layer end face.As stated, the removal of releasing layer allows flexible complex 50 to curl, do not having centre and end portion 80 at flexible complex 50 as shown in Figure 1 under the biasing, forming blade outlet angle between 100 away from fixed electrode 20 ground.
At fixing and flexible complex 130, determined slit 120 influences of the thickness by releasing layer 34 that obtain between 50 be used for beginning the leaving behind voltage of leaving behind that begins of flexible membrane 50.Releasing layer usually can for 2000
Figure G2009100059127D00071
thick.For the flexible complex 50 that tightly curls, possibly need the voltage of leaving behind that begins of 200V.The electric field of resulting 10MV/cm has surpassed the breakdown strength of big multi-dielectric material.Thin releasing layer 34 has reduced flexibility and fixed complex 50, the slit between 130 120, begins the voltage of leaving behind thereby reduced.Yet thin excessively releasing layer (for example much smaller than 1000 ) can cause because discontinuity or defective in the releasing layer can hinder the release of flexible complex some parts and cause being difficult to discharge exciter.
In this embodiment of the present invention, the thickness of releasing layer 34 is reducing apart from standing part 70 a distance, as schematically illustrated among Fig. 2.Like this, the electrode 40 of resulting flexible complex 50 was opened a reduction in 20 minutes with underlayer electrode in more near those zones of standing part 70, thereby formed the slit 120 of classification.Thereby, near standing part 70, form less slit, just produced the lower voltage of leaving behind that begins, and the main body of releasing layer 34 is sufficiently thick in to guarantee suitable release etch.
In an exemplary example; The main body of releasing layer 34 can be thick for 1000-2000 , and the classification of releasing layer 34 part can for 100 to 1000 thick.In order to form the classification part, releasing layer 34 deposit by stages; Near the standing part 70 of flexible complex 50, can carry out the bigger etching of releasing layer, and/or can provide on the thickness more that " simulation " reduces with grey-scale lithography.Though Fig. 2 only shows two steps; But can form a plurality of steps, for example 2000
Figure G2009100059127D00081
, 1000 , 500
Figure G2009100059127D00083
and 250
Figure G2009100059127D00084
that followarea that minimizes the attenuation part of releasing layer is reduced to its minimum potential range to minimize the voltage of leaving behind in next-door neighbour's fixed part office with the slit simultaneously.For example; For releasing layer thickness be 2000 and close the flexible membrane exciter that voltage is 72V; Near standing part with releasing layer thickness be reduced to 500
Figure G2009100059127D00086
just will close voltage and be decreased to 64V, reduce about 10%.For releasing layer thickness be 2000
Figure G2009100059127D00087
and close the exciter that voltage is 310V; With releasing layer thickness be reduced to 500 just this voltage is decreased to 245V, reduce about 20%.
A kind of method that forms step will be the deposit of covering of release film, be repeatedly mask subsequently, be the release film that local etching exposes after each mask.Perhaps, if come the deposit release film with the technology of lifting away from, then repeatedly mask and deposit can be used for forming by stages releasing layer.
Grey-scale lithography is on the thickness of releasing layer, to form the third mode that simulation (promptly more level and smooth) changes.Grey-scale lithography relates to the formation photomask, and this photomask has the very fine pattern that changes or have the opaque and transparent region that can not on etchant resist, differentiate one to one on the opacity of masking film.In either case; Exposure dose is chosen as just partly to develop and removes the thickness of resist under the mask gray level region; Because the UV amount of radiation of irradiation etchant resist stands horizontal transformation on the surface of wafer, the never exposure fully of opaque material (during developing, removing resist fully) is to the complete opaque nothing exposure of mask (and not removing resist).Thereby the thickness of etchant resist gradually changes, rather than subvertical step shown in Figure 2.For example, in one embodiment of the invention, the transition energy of inclination is sent to following releasing layer with the RIE step, and said RIE step is with roughly the same speed etching photomask and releasing layer.
In another embodiment of the present invention, as schematically illustrated among Fig. 3, exciter is provided as as gas or fluid valve, and keeps shut and do not enlarge markedly operating pressure with respect to bigger pressure." pressure " refers to the power that the downside surface with respect to flexible complex 50 applies through gas or liquid, and said gas or liquid flow and clash into this downside surface towards the downside surface of flexible complex 50 through the hole in the fixed complex 130 320.
As shown in Figure 3, the flexible complex 50 among this embodiment comprises hole cap 310, its can by be arranged on the flexible complex 50 or within one deck reinforcing material form.Reinforcing material can form through deposited metal with through lifting away from technological composition, perhaps forms through deposit polymer, oxide or nitride layer and through chemistry or plasma etching composition.Reinforcing material can be a metal, such as Cr, Au, Au alloy or Al, but also can use other metal and nonmetal according to the present invention, comprises for example oxide, nitride or polyimides.Except forming hole cap 310, when not applying biasing, one deck reinforcing material in the mid portion influences the blade outlet angle of flexible complex.If reinforcing material conducts electricity, then can voltage be applied to hole cap 310 to produce at flexibility and fixed complex 50, between 130 or to increase electrostatic attraction.The reinforcing material of conduction can be electrically connected to the flexible electrode in the flexible complex through etched path.In certain embodiments, flexible electrode can be discontinuous on the hole of fixed complex.Through being electrically connected the enhancement layer of conduction, additional electrostatic force is provided around the hole of fixed complex.
Whether no matter have voltage to put on hole cap 310, hole cap 310 all provides more firm sealing through near the mechanical strength that hole 320, has increase.The mechanical strength that cap increases allows the electrostatic force of larger area surround electrode to help keep flexible complex 50 with respect to fixed complex 130.In single exciter, can comprise a plurality of holes and corresponding hole cap.Preferably, comprise the area of the area of hole cap greater than the hole.If the area of hole cap is less than the area in hole, the overall hardness of flexible complex 50 will only increase very little amount so, and can not obtain the ability of increased pressure.Though be depicted as the hole cap, except those zones near the hole, reinforcement can also put on other zone of flexible complex 50.The variable of control hole cap and flexible complex 50 hardness comprise that lap and the hole cap 310 between shape, hole cap and the aperture of thickness, hole cap 310 of the selection of reinforcing material, the mechanical attributes of reinforcing material (for example Young's modulus), material is arranged in that flexible complex (end face or bottom surface) is gone up or within.The preferable range of area ratio is from 1.4 to 9 between metal reinforcements and the aperture, but other scope also is applicable to the present invention.The preferable range of reinforcement (for example hole cap) thickness is from 0.5 μ m to 1.5 μ m, but other scope also is applicable to the present invention.A kind of preferred metal is the gold with chromium adhesion layer.The hole cap shaped that is fit to comprises circular cap or the many row parallel bar parallel with exciter rotating shaft (hinge) (Width).Illustrating, is 70 microns valve exciter for hole dimension, uses to strengthen cap the pressure hold facility is increased 20 to 50%.
Shown in Fig. 4 A, 4B and 5, another embodiment of the present invention has reduced the operating voltage that is used for closed flexible membrane through with the more end portion (being free end) of air-flow or flow guiding flexible complex 50 away from standing part 70.Air-flow or flow through the hole are exerted pressure with respect to the downside of flexible complex 50, thereby stop flexible complex 50 near fixed complex 130.
According to the present invention, the exciter of Fig. 4 A can arrive farther end portion with direct fluid through the shape of revising hole 420.Bellmouth, tri-angle-holed 420 such as shown in Fig. 4 A, have towards the standing part 70 of flexible complex 50 arrange single most advanced and sophisticated 430.Direct fluid through will passing the hole is away from the standing part 70 of flexible complex, hole 420 made things convenient for exciter begin close.When exciter cut out, flexible complex 50 was just reduced by the total area of air-flow or flow bump, and electrostatic force increases along with the minimizing of spacing, thereby had made things convenient for the closure of flexible complex 50 on the remainder in hole 420.Preferably but not necessarily, tri-angle-holed 420 should be at least the twice of the parallel size in this direction of this triangle with the vertical size of the stiff end of flexible complex, and more preferably are 3 times, thereby form the elongated triangular shape shown in Fig. 4 A.
According to alternative embodiment, can distribution equably on the lower surface of flexible complex through the flow in hole.Shown in Fig. 4 B, this realizes through in fixed complex, forming strip (oblongshaped) hole.Dispense flow rate will play with the deflection flow and similarly act on (also as shown in Figure 4 as stated), because dispense flow rate concentrates on minimizing more near the flow in the zone of flexible complex mid portion.When having circular port in the heart in the fixed complex below flexible complex, bigger flow will concentrate on more near mid portion.This bigger concentrated flow will reduce the ability on the flexible complex position of circular port (specifically) capping fixed complex surface.The dispense flow rate that provides through the strip hole will increase the ability of closing on the hole.In addition, have elongated orifices of the same area with circular port and will have less pitch-row that flexible complex need cross in the position in hole from (be that circular port is wideer at the place, hole site, the strip hole is narrower).This less distance changes at place, hole site and the contacted increase flexible electrode of fixed complex area, and this has increased the electrostatic force that keeps flexible complex 50 with respect to fixed complex 130.The width general in strip hole still has longer length less than the width of common circular port so that the flow area identical with circular port to be provided widely.In certain embodiments, the length in strip hole can be 30 to 90% of flexible complex length.
In another embodiment of the present invention, the exciter of Fig. 5 adopts deflection piece 590 with the more end portion deflection towards flexible complex 50 of air-flow or flow.Like this, deflection piece 590 is the more terminal or free part of fluid conductance to flexible complex 50, thereby made things convenient for exciter to close with the mode in the above-mentioned example.Deflection piece 590 can leave flexible complex 50 with portion gas or the complete deflection of fluid; Thereby and reduced from inhibition pressure away from the fluid of flexible complex 50 downside surface normal directions stream.
In this embodiment of the present invention, deflection piece 590 can for example be arranged as the cantilever type fin that on hole 320, extends; And machinery passive (promptly not being electrically driven (operated)).Schematically illustrated like Fig. 6, deflection piece 590 can comprise the chromium layer 690 that is arranged between dielectric layer 30 and the substrate 10.Chromium layer 690 can be patterned with the portal lateral dimension of the deflection fin 590 on 320 of qualification.If hole 320 carves from substrate 10 1 lateral erosion of fixed complex, the etching of substrate will stop at chromium and the polyimide film 30 that is exposed in the hole 320 so.Before stopping at releasing layer 34, for example can use oxygen RIE step to come the polyimide film of etch exposed.
A kind of technology that is used for making deflection piece 590 according to the present invention is to utilize the technology of lifting away from evaporation and composition Cr layer on the end face of silicon substrate.Then, deposit polyimides basic unit, deposit subsequently and composition bottom electrode and the fixedly polyimide insulator that covers bottom electrode.Deposit and composition releasing layer carry out remaining standard technology sequence subsequently to form the flexible membrane 30 that covers valve opening.Etching silicon afterwards, is carried out O to the back side with the hole (its stop at Cr or polyimides and can be with they etchings) that formation runs through substrate overleaf 2The RIE step is with the exposure polyimides of etch exposed releasing layer.The Cr deflection piece has prevented that the polyimides on the Cr is etched.In case releasing layer is etched, the fin that is formed in the flexible membrane is exactly freely.Polyimide layer 30 on Cr layer 690 and the Cr (not being etched owing to sheltering of Cr) is as deflection piece 590.This two-layer (being Cr and polyimides) still is attached to each other.The manufacturing that covers the flexible membrane fin of valve opening can not receive the influence that deflection piece is made.
Another embodiment of the present invention, as shown in Figure 7, prevent the static friction of flexible complex 50 and fixed complex 130.If fluid or other impurity are deposited on the exciter surface, during electricity operation (opening or closing) static friction can take place so.When keeping flat-shaped required voltage to be removed with respect to fixed complex flexible complex, static friction will stop the curling fixed complex that leaves of flexible complex.For example, if surface flexible and fixed complex has been moistened in water or oil immersion, when removing voltage, if owing to the caused surface tension of central fluid layer greater than the recovery stress in the flexible complex, flexible complex will can not curl and leave fixed complex.
In order to reduce static friction, this embodiment of the present invention non-infiltration layer (for example hydrophobic or oleophobic layer) 710,720,730 is arranged among the end face of bottom surface and flexible complex 50 of end face, flexible complex 50 of fixed complex 130 at least one or a plurality of on.Perhaps, if given non-infiltration material has suitable dielectric and engineering properties, perhaps vice versa, and layer 30,60,62 can be by 710,720,730 replacement of non-infiltration layer or as non-infiltration layer 710,720,730.
The adhesion of the infiltration composition (for example water or oil) that non-infiltration layer 710,720,730 prevents not expect; Perhaps make this composition form the liquid pearl and discontinuous film.The non-infiltration layer is described as a kind of increase and is deposited on the contact angle of lip-deep fluid so that fluid forms the material of drop or liquid pearl on this surface.For non-infiltration character, preferably contact angle is greater than 90 °.For low contact angle, fluid will soak into from the teeth outwards or launch and can not form drop or liquid pearl.Infiltration behavior meeting causes the static friction of flexible complex and fixed complex.For example; If water or oil immersion profit are flexible and the surface of fixed complex; When removing voltage, if the surface tension that is caused by the central fluid layer surpasses recovery stress in the flexible complex (cause curl stress), flexible complex will can not curl and leave fixed complex.If the surface be non-infiltration and water or oily Cheng Zhu, static friction can not take place so; In addition, the opening and closing of exciter action (curl and trail) will be released liquid pearl or drop the working region of device.
Static friction is especially general when water or oil are introduced into the exciter environment.So lay-by material of the present invention comprises polymer or other the suitable material that is used for hydrophobic, oleophobic or chemically inert surface.More specifically; Polymer can comprise fluorine-containing compound (for example polytetrafluoroethylene
Figure G2009100059127D00121
), siloxane polymer (for example dimethyl silicone polymer or PDMS) and from assembled monolayer (SAM), for example octadecylsilane (ODS), dichlorodimethylsilane (DDMS), perfluoro decyltrichlorosilane (FDTS).According to the present invention, these coatings can put on the water-wetted surface that the sideboard device of release exposes, promptly fixing dielectric (for example polyimides or SiO 2) and the metal surface, so that the surface that exposes becomes hydrophobic.For example, polymer can be used as additional spin-coated layer and is integrated in the exciter manufacture process; And side by side limited and etching by optics with polyimide layer, this is because can use identical etch chemistries (O for example 2Plasma).Through before the crimping polymer layer, applying the polymer solution of dilution and remove (spin off) redundance through centrifugal process, the non-infiltration layer also can be applied for individual layer; For example, be similar to the tackifier technology that is used for photoresist, wherein unnecessary tackifier are removed only to stay individual layer through centrifugal process.
In certain embodiments, hydrophobic or non-infiltration layer will put on the exciter device of release.This will need the polymer of vapour deposition, for example spray or utilize the solution of very dilution to carry out dip-coating through physical vapor deposition (for example evaporation), chemical vapor deposition, usefulness.
Perhaps, polymer surfaces can be by plasma treatment to change those surperficial infiltration behaviors.The plasma treatment of polymer surfaces can be from for example knowing in United States Patent(USP) No. 5,147, the 678 described prior aries; The full content of this patent is incorporated into this by reference.Under the sort of situation, need not other polymer.For example, can use according to the present invention such as fluorine plasma or chemical plasma and handle (CF for example 4, CHF 3, SF 6, and HF) and so on surface treatment.Can also use hydrogen plasma or chemical treatment (H for example according to the present invention 2, SiH 4, CH 4, organosilan) revise the chemical constitution (through combining F or H ion) of the water-wetted surface that the sideboard device of release exposes so that the surface hydrophobicity that exposes.
In any case although the progress described in the present invention or use the foregoing description, because the electric field that operating voltage produced of exciter can cause the dielectric breakdown in the exciter.The measure that prevents dielectric breakdown can allow exciter to adopt higher operating voltage.And the potential application of exciter can protected and increase to the minimizing of dielectric breakdown.
One embodiment of the present of invention have solved by the edge of fixing and flexible electrode 20,40 and the dielectric breakdown that the bight causes.Shown in Fig. 8 A, hierarchic structure flexible and fixed electrode 40,20 has caused respective edges/bight 880,890.Compare with the electric field along the plane surface of electrode 40,20, near the internal field these bights can be improved in these edge/bights 880,890.Although inserted dielectric layer 30, electric field strengthens still can cause dielectric breakdown.
In one embodiment of the invention, form edge/bight 880,890 that electric field strengthens point by smoothing to prevent that forming electric field strengthens point.A kind of method in smoothing bight is with the micro-fabrication technique deposit of standard and composition bottom electrode, and rotation is deposited on Boping material thinner than the peripheral region on the top edge of bottom electrode then.Carry out etching through the engraving method that flat-shaped material and bottom electrode is had similar etch-rate then, so that before etching surround electrode any part, remove the upper corner of bottom electrode, with its smoothing.Perhaps, also can use aforesaid grey-scale lithography to come the smoothing bight.
In another embodiment of the present invention, shown in Fig. 8 B, fixed electrode 20 is at extend past flexible electrode 40 on the direction of the standing part 70 of flexible complex 50.Therefore; Concave edge/the bight 880 of flexible electrode 40 is removed; And the convex edge/bight 890 of fixed electrode 20 is reorientated; So that flexible electrode 40 no longer is arranged on the edge/bight 890 of fixed electrode 20, and the span of dielectric layer 30 between the terminal edge/bight of electrode 20,40 increases.
Another embodiment of the present invention shown in Fig. 8 C, has solved by projection that flexible complex 50 is attached to fixed complex 130 or tooth 850 caused dielectric breakdowns.Tooth is preferably the structure in the bottom that is formed at flexible complex, its outstanding dielectric layer that runs through releasing layer and be attached to fixed complex.Tooth forms through the disappearance of releasing layer, makes flexible complex and fixed complex in the narrow zone vertical and adjacent with FX 70, to couple together.Tooth can be controlled the blade outlet angle of (preferably reducing) flexible complex 50 with respect to fixed complex 130.Through reducing blade outlet angle, can reduce operating voltage.Tooth 850 defines FX 70 extends into zone line 80 during the manufacturing of exciter zone.Fig. 9 is the SEM microphoto of flexible complex 50, and wherein flexible complex 50 has been curved to the point of tearing along the end face of tooth.This microphoto shows the relation between tooth and flexible complex 50 and the fixed complex 130.
Because this structure of flexible complex 130, flexible electrode 40 gets into the part of tooth effectively downwards, and electrical breakdown can occur in the bight of tooth.Three-dimensional bight is formed in the tooth zone flexible electrode more near the substrate place, and because the local geometric shape in this bight and exist concentrating of electric field and increase in this corners.Bight through sphering tooth 850 is to produce the tooth 860 shown in Fig. 8 C, and the acutance in bight reduces and the generation of dielectric breakdown also reduces.
In another embodiment of the present invention, flexible complex 50 has changes in surface along its outer ledge, such as protruding and depression, to alleviate a manufacturing issue relevant with MEMS technology.Figure 10 A shows the top view of the flexible complex 50 that covers with polyimides.60c has projection 60a to flexible complex 50 along its lateral outer side edge.Projection 60a is depicted as and carries out cylindrical extraction through the transverse edge from flexible complex 50 and remove and form.
In the magnitude of MEMS device, because the power that surface nature causes is occupied an leading position with respect to the power that causes owing to bulk properties usually.Accomplish Wet-type etching with flexible complex 50 when fixed complex 130 discharges, carry out rinsing to remove etchant; And also remove then rinsing residual liquid.If flexible complex 50 is suitably not dry, the surface tension that is caused can be returned the part of flexible complex 50 downwards towards fixed complex 130 deflections.In other words, leave fixed complex 130 after release etch, contact with it owing to the dry surface tension that causes also can cause flexible complex 50 to trail and become towards fixed complex 130 subsequently even flexible complex 50 is curled.
As a result, flexible complex 50 can push fixed complex 130.The static friction that obtains between flexible complex 50 and the fixed complex maybe be sufficiently strong so that after accomplishing drying, keep compound 50,130.Avoid the method for this problem to comprise above-mentioned formation non-infiltration layer 710,720 on dielectric layer 30 and 60; Come etching releasing layer 34 with dry etching, for example based on the RIE of gas; The perhaps supercritical drying of exciter.
Supercritical drying has adopted the liquid state of fluid and the critical point between the gaseous state.Through with postcritical pressurized with fluid on its critical-point pressure, be heated on the critical point temperature and just changed into gas and can not form liquid gas interface at elevated temperatures then chamber depressurization, supercritical liq.A nonrestrictive example of supercritical drying adopts CO 2As supercritical fluid.In this example, from tank, take out the exciter of rinsing, put into isopropanol bath, put into the methyl alcohol groove then.Yet exciter and some methyl alcohol are placed in the overcritical chamber, wherein add liquid CO 2And chamber is cleaned in chamber, only staying CO 2Yet supercritical drying is not a perfect craft.Thereby, various liquid (for example water, isopropyl alcohol, methyl alcohol and liquid CO 2) can be to some extent interact with the surface (for example polyimide surface) of flexible complex 50, so that flexible complex 50 presents different curling and shape.Find out that the crimp energy of flexible complex 50 reverses in potcher, flexible complex curls at said tipper pilot scale figure and gets into substrate downwards but not upwards leave substrate.In the case, the edge of flexible complex 50 will contact with fixed complex 130 and see that from above flexible complex will be protruding pillow-like.This can cause during supercritical drying drying process rinse fluid to be trapped in below the flexible complex 50 and the liquid that is detained can cause the static friction between flexible complex and the fixed complex 130.
Shown in Figure 10 A, projection 60a reduced shown in the static friction between fixed complex 130 and the flexible complex 50 can be passed through, and said projection makes fluid below the contact surface zone, to flow along outer ledge.As alternative, shown in Figure 10 B, the static friction between fixed complex 130 and the flexible complex 50 can reduce through placement variation on the contact surface of transverse edge (for example projection 60d and depression 60b) in addition.This variant on the contact surface of transverse edge is as forming through the releasing layer 34 that forms different-thickness.When structure flexible complex 50 on releasing layer 34, these change transitions are the surface of transverse edge 60c.If flexible complex 50 during drying trails, this variation has just prevented the sealing between transverse edge 60c and the fixed complex 130, thereby makes drier (liquid CO for example 2) can be near any fluid, for example etchant or purificant below flexible complex 50.Similarly the result promptly during drying prevents the sealing between transverse edge 60c and the fixed complex 130, also can obtain through in the transverse edge 60c of flexible complex 50, forming projection variation 60d.
Therefore, the invention provides the different embodiment of exciter, it reduces or eliminates the common issue with that the normal miniature exciter is run into.The manufacturing that comprises the exciter of the some or all of embodiment of the present invention can utilize like above-mentioned United States Patent(USP) No. 6,236,491 described conventional microphotolithographic techniques usually to be carried out.But, below the exemplary details that is applicable to manufacturing process of the present invention will be detailed.
With reference to accompanying drawing, substrate 10 defines the plane surface 12 that can construct the electrostatic MEMS device on it.In certain embodiments, substrate comprises silicon wafer because the through-silicon substrate etch the high aspect ratio hole ability be state-of-the-art, but also can use any suitable backing material with plane surface.Other semiconductor, glass, plastics or other material can be used as substrate 10.In order to form deflection structure, such as deflection piece 590, deposit and patterned metal layer are such as the chromium layer.The chromium layer also can be used for reinforcement, such as hole cap 310.Chromium is preferred, because it can not be used to limit and run through the for example oxygen RIE step institute etching of the valve opening 320 of polyimides.In addition, chromium provides good adhesion between polyimides and silicon, and the common wet etchant that can not be used to remove releasing layer is corroded.The deposit of chromium can be carried out and utilize lifting away from photoetching and coming composition through evaporation.
In some embodiments of the invention, insulating barrier 14 covers the plane surface of substrate 10 and electric insulation is provided.In certain embodiments, insulating barrier 14 comprises the polymer based on non-oxidized substance, such as polyimides.In certain embodiments, if in the process of removing releasing layer, used some acid, so just can not use insulator based on oxide.If release layer materials is used to remove releasing layer with compatible acid or etchant, can use other insulator so, even based on the insulator of oxide.For example, if use the etchant that does not comprise hydrofluoric acid, silicon dioxide can be used as insulating barrier so.Insulating barrier is through forming the deposition of materials that is fit on the plane surface of micro electronmechanical substrate.Polyimides can utilize the spin coating proceeding deposit, and passes through etching-film in oxygen RIE plasma and composition.Perhaps, can deposit also make public and the polyimide material of composition Photoimageable through UV.
In some embodiments of the invention, underlayer electrode 20 is arranged as the layer of the lip-deep general planar that is attached to following insulating barrier 14.In certain embodiments, underlayer electrode 20 comprises the gold layer on the end face that is deposited on insulating barrier 14.Can be on underlayer electrode 20 thin layer of deposit chromium so that can adhere to substrate better.Perhaps, also can use other metal or electric conducting material, operation is corroded as long as these materials can not be released layer processing.Cr and Au film can come deposit and utilization to lift away from photoetching technique through evaporation and come composition.The surface area of underlayer electrode 20 and shape can change according to the needs of the electrostatic force that forms expectation.
In some embodiments of the invention, can be on underlayer electrode 20 deposit second insulating barrier 30, with electrically insulating substrate's hearth electrode 20 and prevent and flexible electrode 40 short circuits.Second insulating barrier can be used as the dielectric layer with predetermined thickness between underlayer electrode 20 and flexible complex 50 and provides.In certain embodiments, second insulating barrier 30 comprises polyimides, can tolerate other inorganic dielectric insulator or polymer that releasing layer is handled but also can use.Second insulating barrier 30 can have the surface 32 of general planar.
Releasing layer is used for from the for example superstructure of fixed complex 130 structure flexible complex 50 in the present invention.On the mid portion 80 and the plane surface 32 in the zone below the end portion 100 of the flexible complex 50 that covers above releasing layer 34 at first is deposited on.Releasing layer only puts on flexible complex and is not attached in the zone below following plane surface that part of.In certain embodiments, releasing layer is included in oxide or other material that is fit to that can be etched when applying acid.Releasing layer also can be near the mid portion 80 of flexible complex 50 deposit or be etched to the thickness of attenuate, reducing resulting slit 120 when releasing layer is etched, thereby form the stairstepping surface.
After deposited capping layer, the miniature manufacturing acid etching technology through standard removes releasing layer usually, such as hydrofluoric acid etch.After removing releasing layer, separate with following plane surface 32 with end portion the centre of flexible complex 50, forms air gap betwixt.In certain embodiments, releasing layer is the SiO through the PECVD deposit 2With the releasing layer composition, and utilize wet HF or other acid etching or RIE etching to dissolve SiO with the photoresist mask layer 2The processing that anchor (anchor) around the periphery of flexible complex 50 or groove place form the stairstepping surface is carried out through photoresist mask layer and wet HF or other acidity or RIE etching similarly.
The layer of flexible complex 50 covers plane surface 32 usually, and before removing releasing layer, also covers releasing layer.These layers are vertically arranged and are illustrated, and said part is flatly arranged along flexible complex.Can construct these layers that comprise flexible complex 50 with known integrated circuit fabrication process.The polymer film 60 of ground floor puts on the exposed region of releasing layer and plane surface 32.Can use the polymer film of polyimides, comprise with releasing layer and handle compatible mutually polymer or other fexible film of inorganic material but also can use as ground floor.At least, two layers can constitute flexible complex 50: the polymer film 60 of ground floor and the flexible electrode 40 of the second layer.Perhaps, minimumly two-layerly can comprise the flexible electrode 40 of ground floor and the polymer film 62 of the second layer.Flexible complex 50 can comprise all these three layers.
Flexible electrode 40 deposits with one deck flexible conducting material cover the polymer film 60 of ground floor.But in certain embodiments, flexible electrode 40 comprises gold, but also can use other can tolerate acid flexible conductor, such as conductive polymer membrane.The surface area of flexible electrode 40 or structure can change according to the needs of the electrostatic force of form hoping or change as the function apart from the distance of deformation point 105.
In certain embodiments of the present invention, second layer flexible polymeric film 62 can put on the flexible electrode layer 40.Perhaps, can be on flexible electrode layer deposit skim chromium so that can be adhered to the layered polymer film better.No matter when use the gold layer,, then can apply chromium if improve gold and the adhesion needs that close on material.Usually, polymer film is flexible, and has the thermal coefficient of expansion different with electrode layer 40.Because electrode layer 40 (if comprised, also having biasing layer 110) expands with different ratios with the polymer film of flexible complex, the layer of high thermal expansion coefficient curls so flexible complex is just towards having more.In certain embodiments, make the biasing layer, and come the deposit polyimides with spin coating proceeding with polyimides.
Enhancement layer on the valve opening 320 can form through depositing metal film on polymeric layer 62 tops.In certain embodiments of the present invention, metal can be a gold, and has through evaporation deposit and with the chromium adhesive layer that lifts away from technological composition.Also can use other metal or material, as long as these metals have suitable mechanical strength and hardness and to the chemical resistance of release etch.
After accomplishing flexible complex 50, next step is usually directed to run through substrate ground and forms valve opening 320.Utilization puts on the photoresist mask of substrate back, carries out deep layer silicon RIE and runs through substrate 10 with etching, and stop on insulating barrier 14 or the deflection piece 590.Proceed etching with oxygen RIE then, once more from back etched up to exposing releasing layer.Can come the etching releasing layer so that the flexible complex film is discharged from substrate with wet HF engraving method then.
Then can the rinsing substrate, and dry in the supercritical drying device, to avoid the static friction of flexible membrane and substrate.Then can be through applying with polymeric material or, arbitrary exposed surface being applied hydrophobic surface handle through changing the surface that exposes with plasma or chemical treatment to form hydrophobic property.Hydrophobic surface makes device under the situation that fluid impurity is arranged through the valve opening introducing, to move.Hydrophobic surface is handled and has been prevented between flexible complex part and the substrate owing to fluid is deposited on the static friction that causes on the surface of exposure.
As stated, electrostatic actuator has plurality of applications, comprises the circuit breaker, minitype actuator, electric switch, valve and the variable radio frequency capacitor that are applied as optical shutter, radio-frequency phase shifter, infrared detector.Each embodiment of the present invention can be individually or is applied to these application in combination.
An example of this application comprises the electric switch that exciter of the present invention is used for having at relay excessive Drive Structure.In this application, a contact is located on the downside of flexible complex 50, and another contact is located on the surface of fixed complex 130.Shown in figure 11, two contacts 22 and 26 are arranged so that when making flexible membrane down to substrate, contact 22 and 26 touches switch 23 and 27 respectively.If have identical thickness around the release film between the contact and the contact, be etched and during the closing of contact when release film so, the just cooperation that the contact can be done, and contact-making surface do not have strong closing force, and this is only to surround the contact because of actuator electrode.Through on contact area with release film attenuation (whole zone or subregion), when making flexible membrane down to substrate, the contact will at first contact, and the surround electrode zone will contact then.This just is delivered to contact area with the part closing force from exciting electrode, brings better to electrically contact and lower resistance.
Another example comprises according to the present invention the exciter device in the hole (for example referring to the hole among Fig. 3,4A and the 4B) that in fixed complex, comprises as gas or fluid valve device.The valve device can etch the hole with high aspect ratio and forms (for example utilizing degree of depth RIE etching silicon wafer) through running through fixed complex.Can comprise glass, quartz or plastic as other substrate of fixed complex.Except degree of depth RIE, the hole in the fixed complex also can form through chemical etching or laser drill.The static excitation of valve device makes can control fluid or gas stream, and wherein flexible complex has prevented that with respect to the sealing of fixed complex gas or fluid stream from passing hole (promptly sealing this valve).
Other application of the present invention comprises optical switch, shutter or the circuit breaker that is used to regulate electromagnetic radiation.For optical switch, can regulate electromagnetic radiation through the outside angle of reflection that changes on the flexible complex top surface.When electrostatic actuator flattens with respect to fixed complex through voltage is put on electrode, according to incidence angle, to compare when exciter curls when not applying voltage, radiation will be left electrostatic actuator with different angle reflections.This device can be used for the micromirror array of optical switch.In addition alternatively, flexible membrane comprises light absorbing material (owing to electrode material increases or intrinsic).Like this, when the flexible membrane coverage hole, for example passing, the light in hole will be cut off.Figure 11 B is the schematic side elevation according to micromechanical actuator of the present invention, and it has constituted the optics by the micromechanical actuator excitation.Element 325 is represented light source or fluorescence detector through optical path 320 transmission or reception light respectively with 325b.
For example in shutter or circuit breaker, electromagnetic radiation can be through transparent fixed complex (wherein optical path 320 constitutes entire substrate).The wavelength of electromagnetic radiation is depended in the selection that is used as the transparent substrates of fixed complex.For example, quartz can be used for the transmission of UV or visible light, and glass can be used for visible radiation, and sapphire, ZnS, Si or Ge can be used for the IR radiation.For this application, flexible complex is flattened caused the reflection of radiation through voltage being applied to electrode, thereby the curling exciter that does not apply voltage just allows radiation to pass through substrate.The array of each device or shutter or circuit breaker can use with any electromagnetic radiation detector of this adjuster of needs or be integrated with it, such as ccd array; The HgCdTe infrared detector; The Si, GaAs or other semiconductor photo diode that are used for UV or IR; Or uncooled thermoelectricity or microradiometer infrared detector.
Under above-mentioned instruction, a lot of modification of the present invention all are possible with changing.Therefore it should be understood that within the scope of the appended claims the present invention can put into practice with the alternate manner outside being specifically described here.

Claims (40)

1. electrostatic actuator comprises:
The base portion that comprises first electrode;
Flexible membrane, it comprises at least two material layers of contacted different materials each other, at least one material layer comprises second electrode of isolating with first electrode electricity;
This flexible membrane comprises:
Be connected to base portion anchor portion and
Opposite with anchor portion and with the isolated free end of base portion,
The said free end of this flexible membrane constitutes under electrostatic force and moves with respect to base portion; And
Be located at upper surface at least one lip-deep non-infiltration compound wherein of lower surface and base portion of upper surface, the flexible membrane of flexible membrane.
2. according to the electrostatic actuator of claim 1, wherein
Said second electrode has by separated first and second parts of third part at least,
Limit near the step that is located at the said anchor portion together through first and second parts, between first and second electrodes, form the slit of classification, this slit narrows down near said anchor portion, and
In flexible membrane, second electrode transition in a continuous manner strides across first and second parts.
3. according to the electrostatic actuator of claim 1, wherein
Said second electrode has by separated first and second parts of third part at least,
Limit near the step that is located at the said anchor portion together through first and second parts, between first and second electrodes, form the slit of classification, this slit narrows down near said anchor portion, and
In flexible membrane, second electrode strides across first and second parts along the length of second electrode in the place's transition of said step.
4. according to the electrostatic actuator of claim 1, wherein first electrode is at an end that is restricted to extend through second electrode on the direction of anchor portion.
5. according to the electrostatic actuator of claim 1, also comprise:
Be arranged in the reinforcement on the flexible membrane away from the anchor portion of flexible membrane.
6. according to the electrostatic actuator of claim 1, wherein base portion comprises substrate, is arranged in first insulating barrier on the substrate, is arranged in said first electrode on first insulating barrier and is arranged in second insulating barrier on first electrode.
7. according to the electrostatic actuator of claim 1, wherein flexible membrane also comprises:
The mechanical bias member, it extends on the part of the free end that is not attached to base portion from anchor portion, and is configured to oppress flexible membrane.
8. according to the electrostatic actuator of claim 1, also comprise:
First electric contact on the flexible membrane;
Second electric contact on the base portion; With
Said first and second electric contacts have formed the relative contact through the electric switch of the motion control of flexible membrane.
9. according to the electrostatic actuator of claim 1, also comprise:
Extend through the hole of base portion; With
Said flexible membrane has the sealing surfaces that is configured to cover said hole; With
Said flexible membrane and said base portion comprise the valve through the motion control of flexible membrane.
10. according to the electrostatic actuator of claim 1, wherein
Said flexible membrane comprise in light absorbing material and the light reflecting material at least one and
Flexible membrane and base portion form the optical switch through the motion-activated of flexible membrane.
11. the electrostatic actuator according to claim 10 also comprises:
Be configured to along the light source of the surperficial direct light of flexible membrane,
Said light is reflected by the light reflecting material of flexible membrane.
12. the electrostatic actuator according to claim 10 also comprises:
Be configured to direct light and run through the light source of base portion,
Said light is absorbed by the light absorbing material of flexible membrane.
13. the electrostatic actuator according to claim 1 also comprises:
Be configured to detect the radiation detector of electromagnetic radiation;
Wherein said flexible membrane comprises light absorbing material or the light reflecting material that electromagnetic radiation and radiation detector are shielded.
14. according to the electrostatic actuator of claim 13, wherein flexible membrane comprises a plurality of flexible membranes, and radiation detector is configured to detect the electromagnetic radiation of passing base portion.
15. according to the electrostatic actuator of claim 14, wherein radiation detector comprises a plurality of radiation detectors.
16. electrostatic actuator according to claim 1, wherein said non-infiltration compound comprises polymer.
17. comprising, electrostatic actuator according to claim 9, wherein said hole extend through base portion and along the elongated orifices of extending away from the direction of anchor portion.
18. electrostatic actuator according to claim 9 also comprises:
Deflection piece, be constructed to make fluid stream from the hole fluid stream guide towards the free end deflection of flexible membrane.
19. electrostatic actuator according to claim 18, wherein said deflection piece comprise the attached end that is connected to base portion and the movable end opposite with attached end.
20. electrostatic actuator according to claim 17, wherein said Kong Zaiqi has than it towards the bigger fluid transmission cross section of a side of anchor portion towards a side of free end.
21. electrostatic actuator according to claim 20, wherein said hole comprises the triangle open mouth that narrows down gradually towards anchor portion.
22. electrostatic actuator according to claim 17, wherein said hole are included in the strip hole that extends on the longitudinal length direction of flexible membrane.
23. electrostatic actuator according to claim 17, wherein said hole comprise in common formation taper or the strip a plurality of holes of at least one.
24. electrostatic actuator according to claim 9 comprises the reinforcement that is arranged in away from the anchor portion of flexible membrane on the flexible membrane.
25. electrostatic actuator according to claim 24, wherein said reinforcement comprise the port lid that is located at a position on the flexible membrane, are used for coverage hole when flexible membrane contact base portion.
26. electrostatic actuator according to claim 25, wherein said port lid comprises at least one of round member, triangle member and elongated member.
27. electrostatic actuator according to claim 25, wherein the ratio of the area between port lid and the hole is 0.5 to 20.
28. electrostatic actuator according to claim 25, wherein the thickness of port lid is 0.1 to 3 micron.
29. electrostatic actuator according to claim 25, wherein port lid comprises electric conducting material.
30. electrostatic actuator according to claim 29, wherein port lid is connected to second electrode.
31. electrostatic actuator according to claim 25, wherein port lid comprises insulating material.
32. electrostatic actuator according to claim 24 also comprises:
First electric contact on flexible membrane;
Second electric contact on the base portion; With
Said first and second electric contacts have formed the relative contact through the electric switch of the motion control of flexible membrane.
33. electrostatic actuator according to claim 9, wherein first electrode is at an end that is restricted to extend past second electrode on the direction of anchor portion.
34. electrostatic actuator according to claim 9, wherein said flexible membrane also comprises:
The mechanical bias member, it extends on the part of the free end that is not attached to base portion from anchor portion, and is configured to oppress flexible membrane.
35. electrostatic actuator according to claim 9, wherein, projection is disposed on the contact surface of transverse edge of said flexible membrane with depression.
36. electrostatic actuator according to claim 35 wherein is disposed in raised face (RF) on the contact surface of transverse edge of said flexible membrane to base portion, said projection is extended towards base portion.
37. electrostatic actuator according to claim 36, wherein said projection comprise the fluid delivery channel of extending towards the flexible membrane core.
38. electrostatic actuator according to claim 36 comprises the wave-like on the flexible membrane periphery edge.
39. electrostatic actuator according to claim 35 comprises the wave-like on the flexible membrane periphery edge.
40. according to claim 2 or 3 described electrostatic actuators, wherein said step reduces the required electrostatic potential amount of flexible membrane that moves.
CN2009100059127A 2004-04-23 2005-04-25 Flexible electrostatic actuator Expired - Fee Related CN101471203B (en)

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9148726B2 (en) * 2011-09-12 2015-09-29 Infineon Technologies Ag Micro electrical mechanical system with bending deflection of backplate structure
DE102013209804A1 (en) * 2013-05-27 2014-11-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. ELECTROSTATIC ACTUATOR AND METHOD FOR MANUFACTURING THEREOF
WO2016100096A1 (en) 2014-12-15 2016-06-23 Robert Bosch Gmbh Flexible disposable mems pressure sensor
CN104536187B (en) * 2015-01-23 2018-01-23 京东方科技集团股份有限公司 Flexible display
CN104720215B (en) * 2015-03-13 2016-09-07 浙江大学 A kind of wearable device with massage functions and Intelligent bracelet
US10538056B2 (en) * 2015-09-11 2020-01-21 Himax Display, Inc. Assembly structure, method to form assembly structure and method to form close-loop sealant structure
CN107215845A (en) * 2017-06-01 2017-09-29 北京有色金属研究总院 A kind of MEMS electrostatic actuators and preparation method based on PDMS vibrating diaphragms
CN111578879A (en) * 2020-05-19 2020-08-25 黑龙江省网络空间研究中心 Method for micro-processing sensor array microstructure body by MEMS

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608816A2 (en) * 1993-01-26 1994-08-03 Matsushita Electric Works, Ltd. Electrostatic relay
CN1365504A (en) * 1999-07-29 2002-08-21 泰可电子后勤股份公司 Microelectromechanical relay and method for production thereof
US6621022B1 (en) * 2002-08-29 2003-09-16 Intel Corporation Reliable opposing contact structure
CN1448333A (en) * 2001-10-24 2003-10-15 日本电气株式会社 Electrostatic actuator

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85106883A (en) * 1985-09-12 1987-03-11 乔治·R·辛普森 Electrostatically actuated two-state device array
US5835256A (en) * 1995-06-19 1998-11-10 Reflectivity, Inc. Reflective spatial light modulator with encapsulated micro-mechanical elements
US5781331A (en) * 1997-01-24 1998-07-14 Roxburgh Ltd. Optical microshutter array
US6236491B1 (en) * 1999-05-27 2001-05-22 Mcnc Micromachined electrostatic actuator with air gap
US6057520A (en) * 1999-06-30 2000-05-02 Mcnc Arc resistant high voltage micromachined electrostatic switch
US6229683B1 (en) * 1999-06-30 2001-05-08 Mcnc High voltage micromachined electrostatic switch
US6373682B1 (en) * 1999-12-15 2002-04-16 Mcnc Electrostatically controlled variable capacitor
US6396620B1 (en) * 2000-10-30 2002-05-28 Mcnc Electrostatically actuated electromagnetic radiation shutter
CN1479964A (en) * 2000-12-11 2004-03-03 ���¡���ɣ����� Electrostatic device
US6731492B2 (en) * 2001-09-07 2004-05-04 Mcnc Research And Development Institute Overdrive structures for flexible electrostatic switch
JP4151338B2 (en) * 2002-07-30 2008-09-17 松下電器産業株式会社 Variable capacitance element and method for forming the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608816A2 (en) * 1993-01-26 1994-08-03 Matsushita Electric Works, Ltd. Electrostatic relay
CN1365504A (en) * 1999-07-29 2002-08-21 泰可电子后勤股份公司 Microelectromechanical relay and method for production thereof
CN1448333A (en) * 2001-10-24 2003-10-15 日本电气株式会社 Electrostatic actuator
US6621022B1 (en) * 2002-08-29 2003-09-16 Intel Corporation Reliable opposing contact structure

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