CN101470664B - 一种应用于mlc介质的nand闪存的管理方法 - Google Patents
一种应用于mlc介质的nand闪存的管理方法 Download PDFInfo
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- CN101470664B CN101470664B CN200710033029XA CN200710033029A CN101470664B CN 101470664 B CN101470664 B CN 101470664B CN 200710033029X A CN200710033029X A CN 200710033029XA CN 200710033029 A CN200710033029 A CN 200710033029A CN 101470664 B CN101470664 B CN 101470664B
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CN200710033029XA CN101470664B (zh) | 2007-12-29 | 2007-12-29 | 一种应用于mlc介质的nand闪存的管理方法 |
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CN200710033029XA CN101470664B (zh) | 2007-12-29 | 2007-12-29 | 一种应用于mlc介质的nand闪存的管理方法 |
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CN101470664A CN101470664A (zh) | 2009-07-01 |
CN101470664B true CN101470664B (zh) | 2012-04-18 |
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CN101075211A (zh) * | 2007-06-08 | 2007-11-21 | 马彩艳 | 基于sector访问的flash存储器的存储管理 |
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CN101075211A (zh) * | 2007-06-08 | 2007-11-21 | 马彩艳 | 基于sector访问的flash存储器的存储管理 |
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CN101470664A (zh) | 2009-07-01 |
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Address after: 510663 301-303, 401-402, zone C1, 182 science Avenue, Science City, Guangzhou high tech Industrial Development Zone Patentee after: Guangzhou Ankai Microelectronics Co.,Ltd. Address before: 301-303 401-402, zone C1, No. 182, science Avenue, Science City, Guangzhou high tech Industrial Development Zone Patentee before: ANYKA (GUANGZHOU) MICROELECTRONICS TECHNOLOGY Co.,Ltd. |
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Address after: 510555 No. 107 Bowen Road, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou Ankai Microelectronics Co.,Ltd. Address before: 301-303, 401-402, zone C1, No. 182, science Avenue, Science City, Guangzhou high tech Industrial Development Zone Patentee before: Guangzhou Ankai Microelectronics Co.,Ltd. |
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