CN101470308B - LCD with high aperture ratio - Google Patents
LCD with high aperture ratio Download PDFInfo
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- CN101470308B CN101470308B CN2007101598845A CN200710159884A CN101470308B CN 101470308 B CN101470308 B CN 101470308B CN 2007101598845 A CN2007101598845 A CN 2007101598845A CN 200710159884 A CN200710159884 A CN 200710159884A CN 101470308 B CN101470308 B CN 101470308B
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Abstract
A thin film transistor liquid crystal display comprises a substrate, a first conductor, an non-organic insulating layer, a transparent electrode, a second conductor wire, an non-organic passivation layer, and a pixel electrode, wherein the first conductor wire is arranged on the substrate, the non-organic insulation layer is used to cover the substrate, the transparent electrode directly contacts with the non-organic insulation layer, the second conductor wire is interlaced with the first conductor wire, the non-organic passivation layer is used to cover the substrate, and the pixel electrode for directly contacting with the non-organic passivation layer is overlapped with part of the transparent electrode and the first conductor wire.
Description
Technical field
The present invention relates to a kind of Thin Film Transistor-LCD, relate in particular to a kind of Thin Film Transistor-LCD that has high aperture and not influenced by coupling effect.
Background technology
(Thin-Film-Transistor Liquid-CrystalDisplay, popularizing TFT-LCD) can be seen the trace of Thin Film Transistor-LCD to large-sized display device from small size along with Thin Film Transistor-LCD.Yet, more, under identical resolution, diminish because of being subject to the viewing area toward the Thin Film Transistor-LCD of small size development, cause aperture ratio of pixels to reduce, cause the brightness of product, contrast to reduce; Perhaps when designing the product of high-res more, can make pixel aperture ratio low excessively, cause the brightness that needs to increase backlight, just can keep certain display brightness, yet increase the brightness of backlight, can cause the cost of module backlight to increase, therefore, the aperture opening ratio that how to increase dot structure is the important research direction of research and development Thin Film Transistor-LCD.
Prior art has begun to develop polycrystalline SiTFT production of liquid crystal displays technology, because the electron mobility of polysilicon (p-si) arrives hundred times than the amorphous silicon of widely applying now (a-si) high tens, make the size of thin film transistor (TFT) can do forr a short time, and has high aperture opening ratio, yet the required technological temperature of the production technology of polycrystalline SiTFT LCD comes highly than amorphous silicon film transistor LCD, and need laser annealing that amorphous silicon structures is transformed into polysilicon structure, at cost, on the yield all less than the production technology of amorphous silicon film transistor LCD.
Please refer to Fig. 1 and Fig. 2, Fig. 1 is the vertical view of dot structure in the known Thin Film Transistor-LCD.Fig. 2 is the synoptic diagram of Fig. 1 along the section of AA ' line.As shown in Figure 1, dot structure 10 comprises in the Thin Film Transistor-LCD: the data lines (data line) 14 that 12, two of two sweep traces that are arranged in parallel (scan line) are arranged perpendicular to sweep trace 12, be arranged on the thin film transistor (TFT) 16 of data line 14 and sweep trace 12 intersections, the bridging line (common line) 18 between sweep trace 12 and the pixel electrode 20 overlapping with part sweep trace 12 and data line 14, wherein thin film transistor (TFT) 16 includes drain electrode 110 and source electrode 120.Because pixel electrode 20 is overlapping with sweep trace 12 signals and line 14, thereby produce coupling capacitance (Cpd, capacitance between pixel and data line) in overlapping part.As shown in Figure 2, dot structure 10 further comprises in the LCD: array substrate 22, organic layer (organic layer) 24, conductive layer (conductive layer) 26, gate insulator (gate insulating layer) 28 and protective seam (passivation layer) 30.Thin film transistor (TFT) 16 is arranged on the array substrate 22 with bridging line 18; this conductive layer (conductivelayer) 26 is arranged between gate insulator 28 and the protective seam 30; 24 of organic layers are arranged between protective seam 30 and the pixel electrode 20; and organic layer 24 all has two through holes (through hole) 32,34 with protective seam 30, makes pixel electrode 20 be seen through through hole 34 and electrically is connected to the drain electrode 110 of thin film transistor (TFT) 18 and electrically is connected to conductive layer (conductive layer) 26 through through hole 34.Therefore, the technique known utilization is provided with organic layer 24, and the thickness of increase organic layer 24 is to reduce the coupling capacitance of 12 of pixel electrode 20 and data line 14 and sweep traces, so that coupling effect is minimized.But since this known dot structure 10 between pixel electrode 20 and protective seam 30, increased thickness reach about 3 microns organic layer 24 in; not only increase manufacturing cost and make that also the thickness of dot structure 10 increases in the Thin Film Transistor-LCD, so how under the prerequisite that reduces coupling effect, to promote the target that pixel aperture ratio has done one's utmost to improve for industry.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of Thin Film Transistor-LCD, so that it has high aperture and not influenced by coupling effect.
According to claims of the present invention; the invention provides a kind of Thin Film Transistor-LCD, it comprises: substrate, be arranged on first lead on the substrate, be used to cover substrate inorganic insulation layer, be used for directly contacting inorganic insulation layer transparency electrode, be used for second lead staggered, be used to cover the inorganic protective layer of substrate and directly be contacted with inorganic protective layer with first lead and with transparency electrode and the partly overlapping pixel electrode of first lead.
The invention provides a kind of Thin Film Transistor-LCD; it has the transparency electrode that is in direct contact with on the bridging line; and promote the storage capacitors value by the area that increases transparency electrode; and by promoting the thickness of inorganic protective layer; the distance of the pixel electrode that is in direct contact with on the inorganic protective layer and transparency electrode is strengthened; to reduce the coupling effect that coupling capacitance was produced,, Thin Film Transistor-LCD of the present invention is not subjected to pixel electrode to be overlapped in the influence that coupling capacitance caused of data line and sweep trace again so that having high aperture.
Description of drawings
Fig. 1 is the vertical view of known pixel structure for thin film transistor liquid crystal display.
Fig. 2 is the diagrammatic cross-section of Fig. 1 along AA ' line.
Fig. 3 is the vertical view of the pixel structure for thin film transistor liquid crystal display of first preferred embodiment of the invention.
Fig. 4 is the diagrammatic cross-section of Fig. 3 along BB ' line.
Fig. 5 is the data line sectional view of the Thin Film Transistor-LCD of first preferred embodiment of the invention.
Fig. 6 is the synoptic diagram of electric capacity connecting circuit of the dot structure of Thin Film Transistor-LCD of the present invention.
Fig. 7 is the diagrammatic cross-section of the pixel structure for thin film transistor liquid crystal display of second preferred embodiment of the invention.
Fig. 8 is the vertical view of the pixel structure for thin film transistor liquid crystal display of third preferred embodiment of the invention.
Fig. 9 is the diagrammatic cross-section of Fig. 8 along CC ' line.
Embodiment
Please refer to Fig. 3 and Fig. 4, Fig. 3 is the vertical view of the pixel structure for thin film transistor liquid crystal display of first preferred embodiment of the invention, and Fig. 4 is the diagrammatic cross-section of Fig. 3 along BB ' line.As shown in Figure 4, the dot structure 50 of Thin Film Transistor-LCD include data line 54 that two sweep traces that are arranged in parallel 52, two arrange perpendicular to sweep trace 52, be arranged on the thin film transistor (TFT) 56 of data line 54 and sweep trace 52 intersections, between sweep trace 52 and the pixel electrode 60 overlapping with the parallel in essence bridging line 58 of sweep trace 52, transparency electrode 62 and heavy and transparency electrode 62 and part sweep trace 52 and data line 54.It should be noted that with the overlapping pixel electrode 60 of data line 54 partly and sweep trace 52 to be not limited to above restriction, but can be only overlapping or only overlapping with part of scanning line 52 with segment data line 54.
As shown in Figure 4, bridging line 58 generally can form by identical photoetching process with sweep trace 52, and bridging line 58 generally is meant the 1st metal level (M1) with sweep trace 52.Data line 54 forms after sweep trace 52, so data line 54 typically refers to the 2nd metal level (M2).The dot structure 50 of Thin Film Transistor-LCD further comprises substrate 64, wherein thin film transistor (TFT) 56 is arranged on the substrate 64 with bridging line 58, and transparency electrode 62 is arranged on the bridging line 58 and directly contacts bridging line 58, there is no other materials and intercept between bridging line 58 and transparency electrode 62.In addition; 56 of thin film transistor (TFT)s comprise the grid 66 that is arranged on the substrate 64, cover on grid 66 and the substrate 64 inorganic gate insulation layer 68, be arranged on amorphous silicon layer 70 on the inorganic gate insulation layer 68, be arranged on doped layer 72 on the amorphous silicon layer 70, be arranged on source electrode 74 and the drain electrode 76 on doped layer 72 and the inorganic gate insulation layer 68 and cover inorganic protective layer 78 on the substrate 64; wherein pixel electrode 60 is provided with and is in direct contact with on the inorganic protective layer 78; and inorganic protective layer 78 has through hole, so that pixel electrode 60 is connected to source electrode 74.It should be noted that there is no any organic layer between pixel electrode 60 and the inorganic protective layer 78 is arranged on wherein, and the thickness of inorganic protective layer 78 can reach 4500 dusts between 9000 dusts, therefore LCD of the present invention has the structure of simplification.In the present embodiment; the material of inorganic protective layer 78 can be silicon nitride (siliconnitride), silicon oxynitride (silicon oxy-nitride) or monox (silicon oxide); the above-mentioned individual layer that material constituted wherein; or stack the sandwich construction that forms, but be not limited thereto by above-mentioned material.Pixel electrode 60 then is a transparent conductive material with the material of transparency electrode 62, for example: and indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) etc., but be not limited thereto.In addition, transparency electrode 62 has first border 80 respectively at the side near sweep trace 52 and data line 54, and scanning linear 52 and data line 54 have second border 82 that is parallel to first border 80 respectively, and pixel electrode 60 has the 3rd border 84 that is parallel to second border 82, wherein in the present embodiment, second border 82 can be near the 3rd border 84 and first border 80, and between the 3rd border 84 and first border 80, but be not limited to this, first border 80 can be between the 3rd border 84 and second border 82, perhaps first border 80, the relative position on second border 82 and the 3rd border 84 can be done the appropriateness change as required.
Please refer to Fig. 5, and in the lump with reference to figure 3 and Fig. 4, Fig. 5 is the data line sectional view of the Thin Film Transistor-LCD of first preferred embodiment of the invention.As shown in Figure 5, Thin Film Transistor-LCD further comprises: the relative substrate 122 that is provided with respect to substrate 64, be arranged on relative substrate 122 with respect to the chromatic filter layer 124 of the side of substrate 64, be arranged on chromatic filter layer 124 with respect to the comparative electrode 126 of the side of substrate 64, be arranged on liquid crystal layer 128 between relative substrate 122 and the substrate 64, two and be separately positioned on the alignment film 130 of liquid crystal layer both sides and be arranged on relative substrate 122 with respect to the side of substrate 64 and the black matrix" 86 of respective data lines 54 settings.Wherein, pixel electrode 60 is overlapping with transparency electrode 62, and overlapping part can produce storage capacitors.In addition since pixel electrode 60 parts on data line 54, its overlapping part is opaque because of data line 54 by opaque material constitutes, therefore can be used as light shield layer uses, so present embodiment is by above-mentioned storage capacitor structure and utilize data line to work as light shield layer, therefore can reduce between pixel and neighbor the width of black matrix" 86 on the data line, the transmittance that makes backlight penetrate single pixel region promotes, thereby increases the zone of pixel openings.Present embodiment also can be applicable on the sweep trace, the width (not shown) of black matrix" 86 on the sweep trace between reduction pixel and neighbor.In addition, the part that pixel electrode 60 overlaps data line 54 can produce coupling capacitance, from known LCD as can be known coupling capacitance can make thin film transistor (TFT) produce coupling effect, mainly be because the coupling capacitance that produces can cause filling on the pixel electrode 60 full electric charge before next display frame conversion, can be subjected to data line 54 and transmit different voltage influences, show the image quality distortion and cause.Therefore, in order to promote the influence that aperture opening ratio is not subjected to coupling effect again, present embodiment provides and reduces the method that coupling effect does not influence aperture opening ratio again.Please refer to Fig. 6, Fig. 6 is the synoptic diagram of the electric capacity connecting circuit of pixel structure for thin film transistor liquid crystal display of the present invention.As shown in Figure 6, the coupling capacitance ratio of data line is ((Cpd1+Cpd2)/((Cpd1+Cpd2)+Cst+Clc+ (Cgs+Cpg))) in single pixel region, Cpd1 is the pixel electrode overlapping coupling capacitance that produces of pixel region data line therewith, Cpd2 is pixel electrode and the overlapping coupling capacitance that produces of adjacent pixel regions data line, Cst is the storage capacitors between pixel electrode and transparency electrode, Clc is the electric capacity of liquid crystal cells (Liquid Crystal), Cgs is the grid of thin film transistor (TFT) and the stray capacitance between source electrode, and Cpg is the electric capacity between pixel electrode and film crystal tube grid.By above-mentioned formula as can be known; compare with the situation on the sweep trace at segment data line with pixel electrode is underlapped; it is higher that pixel electrode overlaps the Cpd1 and the Cpd2 of segment data line and sweep trace situation; therefore the coupling capacitance ratio is also higher; so if keep the underlapped situation on segment data line and sweep trace of pixel electrode; can reduce Cpd1 and Cpd2 and increase Cst; therefore Cpd1 and Cpd2 can reduce by the thickness that increases inorganic protective layer; yet after inorganic protective layer thickness increases; Cst then also reduces simultaneously; reduction to the coupling capacitance ratio is not benefited than having; therefore; present embodiment increases the area that transparency electrode is in direct contact with the area on the bridging line and increases transparency electrode simultaneously; to increase the overlapping area of pixel electrode and transparency electrode, Cst is increased, and then make the underlapped situation on segment data line and sweep trace of coupling capacitance ratio value and pixel electrode identical; therefore, can reduce the coupling effect that coupling capacitance produces.Because transparency electrode is that pixel electrode is to be made of transparent material, therefore no matter area is much, does not influence pixel aperture ratio.
In addition; please refer to Fig. 4; except the means of the area that utilize to increase transparency electrode 62; present embodiment is also by being set directly at transparency electrode 62 on the surface of inorganic protective layer 78; and about 4500 dusts of the thickness of inorganic protective layer 78 are between 9000 dusts; increase the thickness of inorganic protective layer 78,, so also can reduce the influence of coupling effect so that the coupling capacitance between pixel electrode 60 and data line and the sweep trace is dwindled.
Please refer to Fig. 7, Fig. 7 is the diagrammatic cross-section of the pixel structure for thin film transistor liquid crystal display of second preferred embodiment of the invention.For convenience of description, element same as the previously described embodiments uses same reference numerals, and identical part will not repeat to give unnecessary details.As shown in Figure 7; the dot structure 90 of the Thin Film Transistor-LCD of present embodiment comprises: substrate 64, be arranged on thin film transistor (TFT) 56 on the substrate 64, be arranged on transparency electrode 62 on the substrate 64, directly contact transparency electrode 62 and be arranged on bridging line 58 and pixel electrode 60 on the transparency electrode 62; wherein thin film transistor (TFT) 56 comprises and covers the inorganic gate insulation layer 68 on grid 66 and the substrate 64 and cover inorganic protective layer 78 on the substrate 64, and pixel electrode 60 is in direct contact with on the inorganic protective layer 78.Present embodiment and the difference of the foregoing description are that the position of transparency electrode 62 is arranged on bridging line 58 times and directly contacts with bridging line 58, can also promote the performance of storage capacitors by the area that increases transparency electrode 62, and then reduce the coupling effect of coupling capacitance.In addition, transparency electrode 62 has first border 80 respectively on the side limit near sweep trace 52 and data line 54, and sweep trace 52 has second border 82 that is parallel to first border 80 respectively with data line 54, and pixel electrode 60 has the 3rd border 84 that is parallel to second border 82, wherein in the present embodiment, second border 82 can be near the 3rd border 84 and first border 80 and between the 3rd border 84 and first border 80, but be not limited to this, first border 80 can be between the 3rd border 84 and second border 82, perhaps first border 80, the relative position on second border 82 and the 3rd border 84 can be done the appropriateness change as required.
Please refer to Fig. 8 and Fig. 9, Fig. 8 is the vertical view of the pixel structure for thin film transistor liquid crystal display of third preferred embodiment of the invention, and Fig. 9 is the diagrammatic cross-section of Fig. 8 along CC ' line.For convenience of description, use same reference numerals with the first preferred embodiment similar elements, and identical part will not repeat to give unnecessary details.As Fig. 8 and shown in Figure 9; the dot structure 100 of the Thin Film Transistor-LCD of present embodiment comprises: substrate 64; be arranged on the grid 66 on the substrate 64; be arranged on the bridging line 58 on the substrate 64; be arranged on the inorganic gate insulation layer 68 on grid 66 and the bridging line 58; be arranged on the inorganic gate insulation layer 68 and directly contact the transparency electrode 62 of inorganic gate insulation layer 68; be arranged on the inorganic protective layer 78 on inorganic gate insulation layer 68 and the transparency electrode 62 and be arranged on pixel electrode 60 on the inorganic protective layer 78; wherein inorganic gate insulation layer 68 has through hole 102, so that transparency electrode 62 is connected to bridging line 58.The difference of the present embodiment and first preferred embodiment is that inorganic gate insulation layer 68 has through hole 102, and transparency electrode 62 then is arranged on the inorganic gate insulation layer 68, and transparency electrode 62 is connected to bridging line 58 by through hole 102.Compare with the foregoing description, the dot structure 100 of present embodiment makes the pixel electrode 60 and the distance of transparency electrode 62 shorten to have bigger storage capacitors, the coupling effect that can more effectively reduce coupling capacitance and produced.But the present invention is not limited to only to be applied in storage capacitors is positioned at type (Cst oncommon type) on the bridging line, also can be applicable to storage capacitors and is positioned at type (Cst on gatetype) on the grid.In addition, transparency electrode 62 has one first border 80 respectively at the side near sweep trace 52 and data line 54, and scanning linear 52 has second border 82 that is parallel to first border 80 respectively with data line 54, and pixel electrode 60 has the 3rd border 84 that is parallel to second border 82, wherein in the present embodiment, second border 82 can be near the 3rd border 84 and first border 80 and between the 3rd border 84 and first border 80, but be not limited to this, first border 80 can be between the 3rd border 84 and second border 82, perhaps first border 80, the relative position on second border 82 and the 3rd border 84 can be done the appropriateness change as required.
In sum; the invention provides a kind of Thin Film Transistor-LCD; it has the transparency electrode that is in direct contact with on the bridging line; can promote the storage capacitors value by the area that increases transparency electrode; and by promoting the thickness of inorganic protective layer; the distance of the pixel electrode that is in direct contact with on the inorganic protective layer and transparency electrode is strengthened; to reduce the coupling effect that coupling capacitance was produced, therefore Thin Film Transistor-LCD of the present invention not only has high aperture but also be not subjected to pixel electrode to overlap the influence that coupling capacitance caused of data line and sweep trace.
The above only is the preferred embodiments of the present invention, the scope of with good grounds claim of the present invention equivalent deformation and the modification made, all should belong to covering scope of the present invention.
Claims (10)
1. LCD comprises:
Substrate;
Be arranged on first lead on the described substrate;
Inorganic insulation layer is used to cover described substrate;
Be used for directly contacting the transparency electrode of described inorganic insulation layer, wherein said transparency electrode and described first lead electrically link;
With the second staggered lead of described first lead;
Inorganic protective layer is used to cover described substrate; And
Pixel electrode is used for directly contacting described inorganic protective layer, and with described transparency electrode and described first and described second lead a part of overlapping;
Wherein said inorganic protective layer has thickness, and described thickness is between 4500 dust to 9000 dusts; Described inorganic protective layer is set between described pixel electrode and the described transparency electrode.
2. LCD as claimed in claim 1, wherein said transparency electrode has first border, and described second lead has second border that is parallel to described first border, and described pixel electrode has the 3rd border that is parallel to described second border.
3. LCD as claimed in claim 1, wherein said second lead is sweep trace or data line.
4. LCD as claimed in claim 2, wherein said second border is near described the 3rd border and described first border.
5. LCD as claimed in claim 2, wherein said second border is between described the 3rd border and described first border.
6. LCD as claimed in claim 1, wherein said first lead is a bridging line.
7. LCD as claimed in claim 6 wherein described transparency electrode is arranged between described pixel electrode and the described inorganic insulation layer, and described inorganic insulation layer has through hole.
8. LCD as claimed in claim 7, wherein said transparency electrode is connected to described bridging line by described through hole.
9. LCD as claimed in claim 1 wherein is arranged on described inorganic insulation layer between described pixel electrode and the described transparency electrode.
10. LCD as claimed in claim 1 wherein is arranged on described transparency electrode and described first lead under the described inorganic insulation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101598845A CN101470308B (en) | 2007-12-25 | 2007-12-25 | LCD with high aperture ratio |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101598845A CN101470308B (en) | 2007-12-25 | 2007-12-25 | LCD with high aperture ratio |
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| CN101470308A CN101470308A (en) | 2009-07-01 |
| CN101470308B true CN101470308B (en) | 2011-03-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI474092B (en) * | 2011-11-07 | 2015-02-21 | Pixel structure and manufacturing method thereof | |
| TWI502265B (en) * | 2013-01-25 | 2015-10-01 | Sipix Technology Inc | Electrophoretic display |
| CN106526992A (en) | 2016-12-30 | 2017-03-22 | 深圳市华星光电技术有限公司 | COA substrate and liquid crystal panel |
| CN106873278A (en) * | 2017-04-25 | 2017-06-20 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
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