CN101454873A - Radio frequency devices with enhanced ground structure - Google Patents
Radio frequency devices with enhanced ground structure Download PDFInfo
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- CN101454873A CN101454873A CN200780019019.9A CN200780019019A CN101454873A CN 101454873 A CN101454873 A CN 101454873A CN 200780019019 A CN200780019019 A CN 200780019019A CN 101454873 A CN101454873 A CN 101454873A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/184—Strip line phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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Abstract
Tunable radio frequency (RF) devices, such as phase shifters and filters, are formed by depositing thin film layers on a substrate and patterning the thin film layers by various lithography techniques. A thin film metal layer is patterned to form a plurality of capacitors and inductors, leaving at least two grounding regions that lie closely adjacent the capacitors and inductors. As patterned portions of the grounding regions are electrically isolated from each other. Performance of the devices are improved by electrically bridging the differential potential grounding regions.
Description
Technical field
The present invention is directed to based on radio-frequency unit, particularly have the ground connection bridge circuit and improve the tunable optic filter and the phase shifter of the coplanar waveguide structure of this class device performance by the combination of film formed a plurality of inductors of multi-layer thin and capacitor.The mode that these capacitors and inductor change can be arbitrarily.
Background technology
Along with the raising of operating frequency, the structure of carrying electronic signal will change.On microwave frequency, usually ground and signal structure are combined and reduce loss to greatest extent and keep signal integrity.In order to change signal, use inductive effect and capacity effect to realize filtering usually and postpone this class to change.In many cases, all need to regulate or to change the intensity of this effect, a method that achieves this end is exactly the numerical value that changes electric capacity.
But variable dielectric materials presents the spontaneous polarity of reorientation, thereby causes variable dielectric constant.When applying electric field, this dielectric constant can be changed, and this important characteristic makes it be applicable to the tunable microwave device.Tunable dielectric comprises ferroelectric, such as: barium strontium titanate (Ba
xSr
1-xTiO
3, wherein the x span is 0-1, more excellent span is 0.1-0.9, best span is 0.4-0.6, or claims BST), and other materials is for example mixed yttrium bismuth zinc niobate (BZN).It is early stage the sixties that the research of variable dielectric microwave device starts from twentieth century, yet up to date, have benefited from the maturation of low-loss, high tunability ferroelectric material manufacturing process, and people just take up again to this research.Because its high-k, high-breakdown-voltage and relative low loss, BST is studied one of maximum ferroelectric material.Examples of microwave applications includes but not limited to: variable capacitance diode, tunable optic filter, phase shifter, oscillator, tunable matching network, resonator and delay line.
Variable dielectric materials can be made to piece, film and form thick film.Ferroelectric films demonstrates has the dependent change in dielectric constant of moderate moisture (temperature coefficient).Variation in the diaphragm deposition process has caused improved dielectric constant-temperature response, and such as using the multilayer diaphragm, every tunic sheet has different Curie temperature.The optimization of circuit design can reduce the temperature dependency of dielectric constant equally.BZN has even lower temperature coefficient and lower loss, yet its dielectric constant is also lower.
Distributed microwave device and lamped element microwave device have all used ferroelectric to design.Ferroelectric material, such as BST, present high-k (such as, the dielectric constant of bst thin film is 500, the dielectric constant of BST piece is 10000), thereby have can the reduction means volume advantage.Yet this makes and be difficult to carry out impedance matching in the discrete circuitry such as co-planar waveguide (CPW).On the other hand, circuit with lumped element uses element still less, thus further reduced parts volume, reduced loss.
The present invention is directed to improved lumped-element radio-frequency components, such as tunable optic filter and phase shifter.Especially, the character that the present invention relates to CPW is fused among the circuit with lumped element.When CPW being fused in the element that has three inductors at least, it is very important that ground structure just becomes; When comprising four or more inductor in the structure, ground structure is just even more important; And when cascade low-pass/high-pass filter and cascade phase shifter were arranged in the structure, ground structure was just extremely important.The operating frequency of these devices generally in the 2-35GHz scope, yet more extensive, can reach 0.5-50GHz even bigger scope.
The core of lumped-element tunable dielectric devices is a tunable capacitor, and the tunable dielectric material of this capacitor is a variable dielectric, and this point is more general when material is BST.Variable dielectric capacitors can use parallel-plate or plane figure to construct.Parallel plate thin film structures use low dc voltage tuning (such as, voltage is less than 20V), but because usually and the composition and the etching of the Pt hearth electrode that uses together of BST, make this structure complexity that becomes.In addition, generate high crystallization and flawless bst thin film need chemically compatible, on microwave frequency conductive hearth electrode.Platinum once was the main hearth electrode of parallel-plate BST capacitor, yet its low electric conductivity has caused high equipment loss.On the other hand, plane figure needs lithography step still less, and allows the thicker metal of deposition to reduce metal loss.More importantly, can be with epitaxial film deposition on single crystalline substrate, to guarantee lower dielectric loss and the dielectric constant of Geng Gao.Deposition technique such as pulsed laser deposition (PLD) and Organometallic Chemistry gas deposition (MOCVD), has been used to such as MgO and LaAlO
3The substrate of costliness on generate epitaxial film.Yet these technologies cost an arm and a leg, and need the raw material of high price, and yield poorly.Sputtered film often need deposit after annealing and handle and improve crystalline quality.
Open (open atmosphere), low-cost combustion chemistry gas deposition (CCVD) technology of development provide a kind of attractive alternative method so that generate the extension bst thin film on the Sapphire Substrate of cheapness recently, and have high yield and high yield potentiality.Being deposited in No. the 6986955th, the United States Patent (USP) such as, the CCVD of bst thin film just has description.Another kind can be to mix yttrium bismuth zinc niobate (BZN) as the dielectric tunable dielectric material of tunable capacitor.Mixing the yttrium bismuth zinc niobate belongs to structural formula and is generally A
2B
2O
6Green stone one class of nitrogen oxide of O ' (O '=the 7th oxygen) is non-ferroelectric.BZN presents medium dielectric constant (170-200), extremely low loss (tan δ～5 * 10
-4) and low frequency on (～1MHz) high tunability (55%).In addition, by change of component and technology controlling and process, can between-400 to 200ppm/ ℃, regulate the capacitance temperature factor of BZN.
Along with the general development of electronic system in military, commerce and public safety market, to volume little, in light weight, low in energy consumption (SWAP) and have additional function and the low-cost need for equipment of superior function day by day increases.Make spiral inductors and greatly reduced the size of lamped element, yet compare with straight inductors, the former symmetry has also reduced.Ground structure is the present invention, makes asymmetric design---even when using CPW in the main signal structure---also have normal performance.
A structure that important application is a tunable optic filter of the present invention.Microwave filter uses widely in radar, communication, testing equipment and electronic warfare (EW) system.For high-frequency receiver, must use the signal that filter is eliminated does not need frequency range, to avoid receiver overload itself and to avoid the bad interference of working frequency range with external signal.Aspect transmission, must inhibit signal purity, so that farthest reduce interference, observe government and avoid to greatest extent being detected radio frequency source by the enemy about the regulation of radio radiation and in Military Application to other users.
Tunable optic filter is applied in all main fields of microwave engineering.Tunable optic filter described in most of documents and materials is divided into three kinds of fundamental types: mechanically tunable filter, magnetic tunable optic filter and electronically tunable filter.Compare with the magnetic tunable optic filter with machinery, the electronically tunable filter can be on wide (octave) tuning range by tuning soon, and volume with compactness.Most of electronically tunable filters use variable capacitance diodes, and on higher frequency, and these diodes are based on GaAs (GaAs).The electric capacity of variable capacitance diode changes along with reverse voltage; When variable capacitance diode was connected with resonant circuit or resonant element, this capacitance variations can change resonance frequency.Yet the power handling capability of the filter of these variod tunings is lower, and consumes operating power.
In recent years, tunable dielectric and radio-frequency micro electromechanical system (RF MEMS) technology has been shown one's talent becomes the alternative of the tunable microwave device application that has development prospect.They have all shown high power handling ability, negligible power consumption and high-insulativity.
Tunable optic filter based on ferroelectric BST has been confirmed by a lot of people.Tunable optic filter based on RF MEMS transducer has demonstrated much lower loss, yet that they tend to present is discrete and tuning slowly, and has integrity problem.
For modern multiband multi-frequency communication system, need the reconfigurability of frequency and bandwidth.Use the widest tunable techniques to relate to and use variable resistor element to produce lasting tuning and couple variations by variable capacitance diode.Realized to change bandwidth by PIN diode and interdigital coupled resonators.Here described by with a tunable low pass filter (LPF) and a tunable high pass filter (HPF) cascade, obtained band pass filter (BPF) or band stop filter (BSF).By regulating LPF and HPF respectively, the not only tuning centre frequency of BPF (or BSF), and during in regulating LPF or HPF any one, the bandwidth of BPF (or BSF) also has been changed.
LPF is the filter by low frequency, restriction high frequency.The inductor of one group of series connection or shunt capacitor or both combinations are exactly a simple low pass filter.HPF is by high frequency, the filter of restriction low frequency.One group of series capacitors or shunt inductance device or both combinations are exactly a simple high pass filter.Some popular filter functions have: Chebyshev (waiting ripple amplitude), Bessel-Thomson (maximally-flat group delay), Butterworth (maximally-flat amplitude) and Gaussian.
The phase shifter that another important application of the present invention is made up of plural layers.Phase shifter is to be used for communicating by letter and the primary element of the electronic scanning phased array antenna of radar, has typically represented prime cost, the volume and weight of making military tactics aerial array.Can eliminate the obstruction and the interference of mobile communications device by phase shifter, and still receive needed signal, even when this signal and interference are in same frequency.
Compare with the magnetic tuned phase shifters with machinery, electronically tunable phase shifter structure compactness, response is fast, and power consumption is little.Semiconductor phase shifter uses PIN diode, and GaAs variable capacitance diode or mos field effect transistor are as conversion or tuned cell.Although these devices are not expensive, their losses on K frequency band or higher frequency band are higher, and power handling capability is lower.Microelectromechanicswitches switches (MEMS) is used advanced integrated circuit (IC) treatment technology, and it provides the possibility of integration GaAs monolithic integrated microwave circuit (MMIC) or MOSFET technology.These microelectromechanicswitches switches provide low insertion loss, high insulating properties, negligible power consumption and low mutual modulation distortion (IMD); Yet, their need high driving voltage (such as: even 40V is higher), low conversion speed (〉 10 μ s), and the problem of interruption, reliability, encapsulation and variable g value (g-force) may appear.The present invention is suitable for all structures that can change by the method for any aforesaid manufacturing tunable capacitor or inductor based on variable capacitor, but tunable dielectric is a preferred embodiment.
Only by a Dc bias, tunable dielectric material just presents intrinsic tunable capacitance, and these tunable dielectric devices have continuity (analog quantity), high tuning speed, low-loss, durability, low power consumption and high power handling ability.All these unique character have attracted the concern such as microwave applications such as tunable optic filter, phase shifter, matching network and oscillectors.Yet the progress of tunable dielectric devices is but very little.Reason has many-side: (1) because crystal mass is bad, compared with similar products, its loss is still higher; (2) technology with rational cost manufacturing high-quality, large tracts of land BST appears; And/or (3) required Dc bias too high (～100V), perhaps IMD also is a problem.
Extension bst film sheet on the actual commercial sapphire wafer described in No. the 6986955th, the United States Patent (USP) of mentioning in the above has been verified to have low-loss and high tunability.The low pressure of in No. the 6986955th, 6970500 and 7031136, United States Patent (USP), having described to demonstrate improved IMD performance (＜20V) capacitor arrangement.
Several the optional designs about the variable capacitance phase shifter have been proposed.Reflection phase shifter comprises a 3-dB coupler and several reflection load.Though reflective topology can obtain wide bandwidth, this coupler has directly caused the insertion loss of phase shifter, and need take most chip area.Can come control load line phase shifter by the capacitive load that changes on the coplanar waveguide transmission line.The phase shifter that uses this topology easily low frequency (＜10GHz) go up elongated.Designed the phase shifter that uses all-pass network (APN) topology that volume is little, loss is low.
Summary of the invention
Radio frequency variset, particularly tunable optic filter and phase shifter are film formed by multi-layer thin, and it is the film that is made of electric conducting material that one deck is wherein arranged, and typically are metal film layer (thickness＜10 micron).By utilizing, come this conductive material thin film layer composition removing the some parts of this layer as photoetching technique, thereby form conductive path, comprise the current-carrying part and the electrode for capacitors of inductor, and stay the radio frequency grounded part of this conductive material layer.This radio frequency ground connection is by inductor or capacitor and radio frequency electrical signal insulation.This ground structure shape uniqueness, this moment, a plurality of inductors and capacitor were to be formed on together in the device because its shape and with the interaction/coupling of lamped element and holding wire, this ground connection understanding can not be fixed its correct current potential.When this ground connection narrower, afterbody in shape point, during with the signal conductive next-door neighbour, this phenomenon is just remarkable.For addressing this problem, and under low-loss situation, keep less component size, need be the ground structure that extends by electric conductor, as metal, those walk around electric component or holding wire nearby the line of ground connection couple together, reduce the earthing potential drift to greatest extent.This is for close electrode for capacitors and the close regional particular importance that is connected the current-carrying part of nearest inductor from main signal.According to the present invention, by the performance that provides conductive structure to improve this radio-frequency unit, this conductive structure does not have the coupling part bridge joint with the radio frequency of conductive layer radio frequency grounded part.
Small size and high-performance, these 2 particular importances.Usually use the CPW circuit to reduce loss to greatest extent, thereby be required to use in the radio frequency interface of design apparatus, the ground connection on this circuit has certain separating based on the material that uses with operating frequency with holding wire.By in design, keeping the association between ground connection and the signal as much as possible---just as a CPW device---performance that just can optimization lump component arrangement.This is a kind of form that merges CPW and lamped element uniquely.When capacitor and inductor are designed to symmetrically, when perhaps having only the inductor below two or two, can move well at the situation lower device that does not have the ground connection bridge circuit.But, along with the increase of complexity and asymmetry, in order to guarantee stable earth potential, to the also increase simultaneously of demand of ground connection bridge circuit.Therefore, as more than three or three---under the perhaps more excellent situation, four or more---inductor the time, this demand is just higher.When the inductor more than five or five, will further need the ground connection bridge circuit.The situation that needs most the ground connection bridge circuit is when two or more elements are concatenate in the single assembly.
Description of drawings
Fig. 1 shows the schematic diagram of one seven grades lamped element Chebyshev low pass filters; It has four series reactors and three shunt capacitors.
Fig. 2 shows the ideal responses for filter shown in Figure 1, and wherein cut-off frequency is 8GHz, and the passband ripple coefficient is 0.01.In this figure and other accompanying drawings, S
11Expression return loss (or reflection loss), S
21Loss (or transmission coefficient) is inserted in expression.
Fig. 3 shows the schematic diagram of one seven grades lamped element Chebyshev high pass filters; It has four series capacitors and three shunt inductance devices.
Fig. 4 shows the ideal responses of filter shown in Figure 3, and wherein cut-off frequency is 8GHz, and the passband ripple coefficient is 0.01.When in these circuit, using the BST tunable capacitor, when regulating the BST capacitor, can change cut-off frequency by applying Dc bias.
Fig. 5 shows the electroresponse (ideal) of the seven grades of HPF shown in Figure 3 that have tunable BST capacitor, and the numerical value of this BST capacitor is pressed 2.5:1 and descended when regulating.
Fig. 6 shows the ideal responses of a band pass filter (BPF) that constitutes by cascade LPF shown in Figure 1 and HPF shown in Figure 3.The cut-off frequency of noting this LPF and HPF is redesigned, so that form a BPF with good responses.
Fig. 7 a shows the schematic diagram of seven grades of low pass filters, and Fig. 7 b shows the schematic diagram of a BPF, and each all has the input and output of CPW.
Fig. 8 a show according to the present invention each shown in Fig. 7 b not with the measurement result of the BPF of ground connection bridge circuit, Fig. 8 b shows the measurement result of the BPF of each band ground connection bridge circuit shown in Fig. 7 b according to the present invention.
Fig. 9 shows the schematic diagram of an all-pass network (APN) phase shifter.Use the BST capacitor to come phase shift.
Figure 10 shows the schematic diagram of three cascade APN phase shifters of band ground connection bridge circuit and CPW I/O.
Figure 11 shows the analog result of three cascade APN phase shifters not being with ground connection bridge circuit (a) and band ground connection bridge circuit (b).
Figure 12 shows according to the present invention band ground connection bridge circuit and has incorporated the plane graph of the phase shifter of lamped element/CPW.
Figure 13 shows according to the present invention band ground connection bridge circuit and has incorporated the plane graph of the high pass/low pass filter of lamped element/CPW.
Figure 14 shows along the cross-sectional view of 14-14 line among Figure 13.
Embodiment
Fig. 1 shows the schematic diagram of one seven grades lamped element Chebyshev low pass filters.This filter has four series reactors and three shunt capacitors.Fig. 2 shows the electroresponse of this filter, and wherein cut-off frequency is 8GHz, and the passband ripple coefficient is 0.01.Fig. 3 shows the schematic diagram of one seven grades lamped element Chebyshev high pass filters.This filter has four series capacitors and three shunt inductance devices.Fig. 4 shows the electroresponse of this filter, and wherein cut-off frequency is 8GHz, and the passband ripple coefficient is 0.01.When in these circuit, using tunable capacitor, when regulating this capacitor, can change cut-off frequency by applying Dc bias.Fig. 5 shows the electroresponse of seven grades of LPF that have tunable capacitor, and the numerical value of this capacitor is pressed 2.5:1 and descended when regulating.This tuning principle is equally applicable to HPF, band pass filter (BPF) and band stop filter (BSF).
When two filter cascades illustrated in figures 1 and 2, the running of whole device is just as a BPF.Its simulated responses is shown in Figure 6.Therefore when with same tuning this LPF of ratio while and HPF, the centre frequency of BPF just is moved.Though only the capacitor among this LPF or the HPF is applied bias voltage, its bandwidth changes.
Based on above principle, constructed a film circuit with lumped element.Input and output have all used a cutting back co-planar waveguide (CPW).This CPW uses ground connection-signal-ground connection (GSG) detection so that measure, and uses flip chip technology (fct) or lead-in wire bonding method so that this filter is attached on the printed circuit board (PCB) (PCB).LPF is shown in Figure 7 with the cascade LPF/HPF that has such input and output.
The present invention relates to make as shown in Figure 7 filter normally to move or improve the ground structure of its operation.Concerning capacitor, plane and parallel-plate layout can be used, and spiral type or straight inductors all are suitable for.Can realize ground connection connection, but more recommend to use the metal bridge circuit to realize by the lead-in wire bonding.Fig. 8 a and 8b show BPF (8b) and measurement result of (8a) afterwards before adding lead-in wire bonding ground connection bridge circuit.Notice that the decline of high frequency side is just so not rapid owing to used a Pyatyi LPF and seven grades of HPF.(Fig. 8 observes two peak values a) time, and when band ground connection bridge circuit (Fig. 8 b), observes desirable single peak value when not being with the ground connection bridge circuit as can be seen.This component end item has used BST, and its frequency and bandwidth can be conditioned.
Fig. 9 shows the schematic diagram of an all-pass network phase shifter.Use tunable capacitor to come phase shift.Simulation shows the phase deviation that can obtain 120 degree for the capacitor tunability of 2.5:1, therefore will obtain the phase deviation of 360 degree, needs three such phase shifters.In the present invention, the input and output side of each phase shifter has all connected a cutting back co-planar waveguide (CPW), and needs to use the ground connection bridge circuit to make functional phase shifter.A schematic representation of apparatus like this is shown in Figure 10.
Figure 11 shows band ground connection bridge circuit and not with the analog result of three cascade APN phase shifters of ground connection bridge circuit.
Figure 12 shows phase shifting equipment 100, and this device comprises by photoetching, deposits and peel off three cascade phase shifters 102 that formed by the plural layers composition.Originally be that the continuous metal thin layer that one deck has covered the composition photoresist is a kind of like this structure now: after zone 104,106,108 and 112 removes metal, such as peeling off, this structure has comprised roughly by the central radio-frequency transmission structures of 120 expressions and next-door neighbour and the access area 126a and the 126b that arrange along transmission region 120. Access area 126a and 126b pass through metal removal zone 104,106,108 and 112 electric insulation each other.The radio-frequency structure of capacitor 130 has been determined to comprise in the remainder of metal level and metal removal zone, and wherein dielectric material 131 is below the zone of this capacitor, spiral inductors 132 and straight inductors 134.According to the present invention, access area 126a and 126b are electrically connected by bridge arrangement 142, and access area 126a and 126b each away from part by structure 140 internal bridged.Show the various piece of bridge arrangement 144 bridge joint spiral inductors 132 equally.All bridge arrangement 140,142 and 144 all are to form together in the lithography/deposition/lift-off processes that is used for printing this structure.By utilizing structure 120 and 104 correct bandwidth and substrate (in this example, being sapphire) dielectric constants to constitute co-planar waveguide (CPW) about ground.
In phase shifter, the ground connection bridge circuit is by improving the performance of all inductors and capacitor device with quadrat method.If there is not bridge circuit, because the shape of a plurality of component ambients (element can be the transition of inductor, capacitor or CPW part), ground has lost it and has unified current potential.Each element all is designed to have certain characteristic, if having different current potentials from the nearest metal of this element, then these characteristics will change.Ground connection bridge arrangement of the present invention makes this earth potential more consistent, thereby discrete component can more respond as being designed to ground, and does not have local resonance.
The neighbouring element of ground connection bridge circuit and their processes has some interactions really; Basically they form a low value capacitor over the ground.In order to reduce this effect to greatest extent, when making the ground connection bridge circuit, should use dielectric materials, and the bridge circuit width never should be above making the enough consistent required width of earth potential.Too narrow ground connection bridge circuit can present the characteristic of inductor, can't obtain desired neutralization.Usually, the ground connection bridge circuit is should be at least the same wide with the metal wire that is used for constituting inductor element, preferably, is the width that doubles metal wire.
Whenever possible, the unusual balance and do not have CPW to make any end unevenly finish or begin of the grounded metal at holding wire two ends.Need be that CPW is in the place of neighbouring element end to an important area of ground connection analysis of bridge.The ground connection bridge circuit needs across holding wire or be parallel to holding wire, perhaps may across with the combination of parallel ground connection bridge circuit.In the junction of device,,, may need the ground connection bridge circuit on the holding wire perhaps at the end of asymmetric element when single phase shifter or filter are in cascade together.Can simulate with or without the structure of ground connection bridge circuit and determine where need the ground connection bridge circuit.Simulation discloses in many cases, and the ground connection bridge circuit has all improved performance or has made device according to required feature operation.In order to obtain efficient, can design the ground connection bridge circuit for device in the place that those expectations need the ground connection bridge circuit, and can simulate these designs.If the simulation display result is good, then do not need similarly not simulating with the structure of ground connection bridge circuit.
The length that need minimize total reduces device volume and cost, farthest reduces current potential resonance and reduce metal loss.Make interdigitated capacitors (IDC) or plane-parallel capacitor (PPC) and spiral inductors,, can reduce the length of ground connection passage and signalling channel to substitute based on linear elements.Higher capacitance is arranged on this holding wire if desired, can widen this signalling channel, make IDC or PPC capacitor length unlikely oversize and cause device longer.Fixed capacitor or MEMS (micro electro mechanical system) (MEMS) or can from these ground structures, benefit equally based on the variable capacitor of diode.
Figure 13 shows high pass/low pass filter 200, and this high-pass structure 202 illustrates as vertical structure 202 on the left sides, and this lowpass structures illustrates on the right as transversary 204.The same with the phase shifter of Figure 12, the HPF/LPF of Figure 13 forms by photoetching/deposition/lift-off technology as print structure.By from zone 210,212,214,216,218 and 220, removing metal and staying at the central radio-frequency conduction region shown in 224, determined different capacitor 230,232 and 234, and different inductors 240 and 242.Be connected by bridging structure 260 with 250b as the initial access area 250a that passes through the electric insulation of metal composition printing.Access area 250a and 250b away from the zone further by structure 262 bridge joints.The improvement that obtains by this bridge joint has argumentation in the above with reference to figure 8a and 8b.
Preferably, the structure shown in Figure 12 and 13 constitutes by depositing a plurality of thin layers, and this radio-frequency structure constitutes by different photoetching techniques.Such deposition, photoetching and lift-off technology are known in this area.
Figure 12 and 13 shows after the metal level composition is formed the radio frequency conductive structure of similar capacitor and inductor, further the deposit film material with form different bridge arrangement with photoetching technique.Figure 14 shows along the cross-sectional view of the amplification of 14-14 line among Figure 13.On the substrate 270 below is the remainder of original metal level, comprises radio frequency conductive structure 224 and access area 250a and 250b.Ground structure 260 comprises the cross section metal 262 and the level cross-sectionn 264 of lifting.Zone below this level cross-sectionn 264 is shown in Figure 14 as air gap, but can use non-conducting material, such as low-loss residual light definable polymeric material, fills this zone.
Wherein a kind of method that forms this structure is described below.This structure forms on sapphire (aluminium oxide) substrate.By carry out on this Sapphire Substrate CCVD deposit one deck typically thickness be about 0.1 micron to about 0.4 micron BST layer.Come this BST layer of etching by wet etch process, to stay some BST districts as the electric capacity dielectric regions.Deposition and wet etching AZO (Al-Doped ZnO) form electric resistance structure.The AZO structure has very high resistive, and it does not carry radiofrequency field, but meeting conduct direct current electric current; Therefore, the AZO structure can be used as the electrode of Dc bias.In this, total has all shielded, and one deck gold thin film is deposited by electron beam evaporation, and patterned by peeling off.Then by electron beam evaporation with peel off and form another thick metal layers (Ti/Cu/Au), with current-carrying part that capacitor and inductor are provided and earthing material on every side.Apply the photosensitive polymer of selling with the Cyclotene trade mark of Dow company, and it is patterned into passivation layer, so that these parts are avoided moisture, dust and other pollutions.Then by electron beam evaporation, then peel off and form this metal as bridge circuit.
Though above-mentioned flow process is to form bridge arrangement by deposition and photoetching technique, can also form this bridge circuit by the lead-in wire bonding.
Claims (20)
1. one kind by the film formed radio-frequency unit of multi-layer thin, and this radio-frequency unit comprises a plurality of capacitors, a plurality of inductor and at least one holding wire and two access areas,
Each of described at least two access areas is positioned at described a plurality of capacitors of distance and the enough near position of inductor, so that in radio spectrum, interact,
Form described at least two access areas, make described at least two access areas electric insulation each other, perhaps poor along have radio-frequency potential samely, and
In improvement, form the electric conducting material bridge circuit, so that be electrically connected described at least two access areas, the radio-frequency potential that perhaps reduces same access area to greatest extent is poor.
2. radio-frequency unit according to claim 1, wherein the electric conducting material bridge circuit is electrically crossed over this holding wire, thereby connect at least two described access areas away from part.
3. radio-frequency unit according to claim 1, wherein at least one described capacitor is adjustable.
4. radio-frequency unit according to claim 3, the dielectric material of wherein said at least one described capacitor is tunable.
5. radio-frequency unit according to claim 3, the dielectric material of wherein said at least one described capacitor are to mix yttrium bismuth zinc niobate or barium strontium titanate.
6. radio-frequency unit according to claim 3, wherein said device plays phase shifter.
7. radio-frequency unit according to claim 3, wherein said device plays filter.
8. radio-frequency unit according to claim 3, wherein said device plays low pass filter.
9. radio-frequency unit according to claim 3, wherein said device plays high pass filter.
10. radio-frequency unit according to claim 3, wherein said device plays low-pass/high-pass filter.
11. radio-frequency unit according to claim 1, wherein the electric conducting material bridge circuit is the same wide with the circuit that is used for forming at least one inductor at least.
12. radio-frequency unit according to claim 1, wherein the electric conducting material bridge circuit is the twice of width that is used for forming the circuit of at least one inductor at least.
13. radio-frequency unit according to claim 1, wherein the electric conducting material bridge circuit is parallel with holding wire, thereby has connected the several sections of same access area.
14. radio-frequency unit according to claim 2, wherein at least one additional electric conducting material bridge circuit is parallel with holding wire, thereby has connected the several sections of same access area.
15. radio-frequency unit according to claim 1 is a co-planar waveguide.
16. one kind by the film formed radio-frequency unit of multi-layer thin, this radio-frequency structure comprises: input, output, a plurality of capacitor, a plurality of inductor, holding wire and at least two access areas,
Each of described at least two access areas is placed with respect to holding wire, so as this device input or output the formation co-planar waveguide,
Each of described at least two access areas is positioned at described a plurality of capacitors of distance and the enough near position of a plurality of inductor, so that in radio spectrum, interact,
Form described at least two access areas, make described at least two access areas electric insulation each other, perhaps poor along have radio-frequency potential samely, and
In improvement, form at least one electric conducting material bridge circuit, so that be electrically connected described at least two access areas, the radio-frequency potential that perhaps reduces same ground structure to greatest extent is poor.
17. radio-frequency unit according to claim 16, wherein the electric conducting material bridge circuit is parallel with described holding wire, thereby has connected the several sections of same access area.
18. radio-frequency unit according to claim 16, wherein the electric conducting material bridge circuit is electrically crossed over described holding wire, thus connect at least two described access areas away from part.
19. radio-frequency unit according to claim 17, wherein at least one additional electric conducting material bridge circuit is also parallel with holding wire, thereby has connected the several sections of same access area.
20. radio-frequency unit according to claim 16 is a tunable capacitor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80802106P | 2006-05-24 | 2006-05-24 | |
| US60/808,021 | 2006-05-24 | ||
| PCT/US2007/011848 WO2008108783A2 (en) | 2006-05-24 | 2007-05-17 | Radio frequency devices with enhanced ground structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101454873A true CN101454873A (en) | 2009-06-10 |
| CN101454873B CN101454873B (en) | 2010-09-22 |
Family
ID=39738926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200780019019.9A Expired - Fee Related CN101454873B (en) | 2006-05-24 | 2007-05-17 | Radio frequency devices with enhanced ground structure |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8988169B2 (en) |
| CN (1) | CN101454873B (en) |
| GB (1) | GB2452424B (en) |
| WO (1) | WO2008108783A2 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20090134953A1 (en) | 2009-05-28 |
| CN101454873B (en) | 2010-09-22 |
| WO2008108783A2 (en) | 2008-09-12 |
| WO2008108783A3 (en) | 2008-10-23 |
| GB0820195D0 (en) | 2008-12-10 |
| US8988169B2 (en) | 2015-03-24 |
| GB2452424B (en) | 2009-12-30 |
| GB2452424A (en) | 2009-03-04 |
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