CN101452706B - Protection film forming method - Google Patents
Protection film forming method Download PDFInfo
- Publication number
- CN101452706B CN101452706B CN2007101963995A CN200710196399A CN101452706B CN 101452706 B CN101452706 B CN 101452706B CN 2007101963995 A CN2007101963995 A CN 2007101963995A CN 200710196399 A CN200710196399 A CN 200710196399A CN 101452706 B CN101452706 B CN 101452706B
- Authority
- CN
- China
- Prior art keywords
- counterdie
- diaphragm
- film
- forms
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 116
- 230000004224 protection Effects 0.000 title description 10
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 31
- 238000010884 ion-beam technique Methods 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 28
- 238000009413 insulation Methods 0.000 claims description 24
- 238000003801 milling Methods 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 230000033228 biological regulation Effects 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000005286 illumination Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 26
- 238000005260 corrosion Methods 0.000 abstract description 26
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000004615 ingredient Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- -1 monox Chemical compound 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KKADPXVIOXHVKN-UHFFFAOYSA-N 4-hydroxyphenylpyruvic acid Chemical compound OC(=O)C(=O)CC1=CC=C(O)C=C1 KKADPXVIOXHVKN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a method for forming a thin protective film with good corrosion resistance, wherein the high-quality protected body can be provided according to the method. The method for forming the protective film on at least partial surface of the protected body comprises a bottom film formation working procedure of forming a bottom film on the surface of the protected body and a DLC film formation working procedure of forming a diamond-like carbon film on the bottom film, wherein a link of partial or entire removal of the bottom film along the direction of film thickness after the bottom film with a specified film thickness is deposited is repeatedly performed in the bottom film formation working procedure, thereby forming the bottom film on the surface of the protected body for many times. Also, the method also comprises an insulating layer formation working procedure of forming an insulating layer on the surface of the bottom film on which the diamond-like carbon film is formed before the DLC film formation working procedure.
Description
Technical field
The present invention relates to a kind of formation method of diaphragm, especially relate to the method that forms thin protective film on the surface of protected body.
Background technology
In recent years, in order to realize miniaturization and high capacity, the high record densityization of disk set is development rapidly.Therefore, need to shorten the distance between head-slider (head slider) and the disk, promptly need further to dwindle the flying height of head-slider with respect to disk.
On the other hand, if dwindle the flying height of head-slider with respect to disk, head-slider contacts with the magnetic disk surface of high speed rotating or the probability that collides also can increase.Therefore it is very necessary forming diaphragm on the flying surface of head-slider.Because this diaphragm can touch magnetic disk surface, thereby must possess high sliding (low frictional properties) and mar proof.And, should shorten the distance between magnetic head element portion and the disk, and must form the extremely thin diaphragm of thickness in order to reach high record densityization.Also have, magnetic head element portion possesses the magnetic write element and as the magneto-resistance effect element of read element, and these elements all are made by corrosion-prone magnetic material, and therefore described diaphragm must also will possess the performance that prevents the magnetic material corrosion.
With reference to Figure 12, the formation method of head-slider diaphragm of the prior art is described.As shown in the drawing; the diaphragm of head-slider is that the be connected stick (bar-block) of state of a plurality of head-sliders is carried out following operation and forms, and cleans the surface (step S101) of (cleaning) protected body (head-slider), counterdie (step S102) that the deposition principal ingredient is silicon (silicon), depositing diamond-like carbon film (Diamond like carbon:DLC) (step S103) on counterdie that is:.The head-slider diaphragm that is formed like this has the counterdie that is made of silicon fiml and silicon oxide film and forms the two-layer film configuration that DLC film is thereon formed.
For guaranteed quality, the head-slider of making according to above-mentioned operation is required must be by various corrosion tests.Here it representationally has acid dip test that is disclosed or the high temperature and humidity test that is disclosed said corrosion test in patent documentation 2 in patent documentation 1.
Yet to the diaphragm that forms through above-mentioned operation deposition, promptly the diaphragm that is made of two membranes carries out the result of filming test, just can not be by described corrosion test when film thickness deficiency 2nm.Therefore, the diaphragm that forms according to said method can not carry out filming owing to there is the corrosion resistance problem, thereby can not realize high record densityization.Otherwise, if will realize filming, then will reduce corrosion resistance, thereby reduce the quality of head-slider.
And; as shown in figure 13; the diaphragm that is disclosed in patent documentation 2 forms through following operation; that is: clean protected body (head-slider) surface (step S201), the deposition principal ingredient be the counterdie (step S202) of silicon, on counterdie depositing diamond-like carbon film (Diamond like carbon:DLC) (step S203) and, make thickness attenuation (step S204) by etching (etching) diamond-like carbon film.In view of the above, disclose the not enough 2nm of thickness of diaphragm, and passed through the technology contents of described high temperature and humidity test.But,, thereby be difficult to by the strict more acid dip test of condition, so still can not reach the purpose that improves corrosion resistance because these patent documentation 2 disclosed diaphragms equally also have the structure of described two membranes.
In view of this, the invention provides a kind of formation method of corrosion resistance good film diaphragm, and then high-quality protected body is provided, can improve above-mentioned shortcoming of the prior art with this.
Patent documentation 1: Japanese Patent Application Laid-Open 2006-107673 communique
Patent documentation 2: Japanese Patent Application Laid-Open 2007-26506 communique
Patent documentation 3: Japanese Patent Application Laid-Open 2006-343227 communique
Summary of the invention
One embodiment of the present of invention provide a kind of diaphragm formation method that forms diaphragm at least a portion surface of protected body, and it comprises: the counterdie that forms counterdie on the surface of protected body forms operation; And the DLC film that forms diamond-like carbon film on this counterdie forms operation; wherein; carry out described counterdie when forming operation; carry out repeatedly after the counterdie of deposition regulation thickness, partly removing the operation link of this counterdie again along film thickness direction, thereby repeatedly form counterdie on the surface of protected body.
The formation method of this diaphragm comprises that also insulation course forms operation, thereby before carrying out described DLC film formation operation, forms insulation course on the counterdie surface of described formation diamond-like carbon film.
And described counterdie forms operation and further comprises: partly remove this counterdie along film thickness direction after the counterdie of deposition regulation thickness on the surface of described protected body, thereby first counterdie that forms first counterdie forms link; And part is removed this counterdie again after depositing counterdie once more on first counterdie, thereby second counterdie that forms second counterdie forms link.
Specifically, form in the operation at described first counterdie, forming thickness is that the above counterdie of 1nm is removed this counterdie afterwards again, makes its film thickness reach not enough 1nm.Form in the operation at described second counterdie, forming thickness is that the above counterdie of 1nm is removed this counterdie afterwards again, makes its film thickness reach not enough 1nm.
According to present embodiment, at first directly on the surface of protected body, deposit the counterdie of setting up as continuous film with regulation thickness., along film thickness direction remove part or all the counterdie that be deposited and make the thickness attenuation of film, form first counterdie with this thereafter.Afterwards, further deposition can constitute continuous film and have the counterdie of adequate thickness thereon, and removes the counterdie that a part is deposited and make the film thickness attenuation along film thickness direction, forms second counterdie with this.In addition, can also have the formed counterdie of the method that is removed again behind the counterdie of regulation film thickness according to aforesaid deposition in further lamination on the above-mentioned counterdie.Again, diamond-like carbon film is formed on the superiors, forms diaphragm with this.In view of the above, can form becomes film, and can suppress the diaphragm of film defective.
At this moment, thin thickness may reduce the insulativity of film itself, therefore can guarantee its insulativity by the mode that forms insulation course on the counterdie surface that forms diamond-like carbon film.So just can form diaphragm with excellent corrosion resistance.Thereby can realize having formed high-qualityization of the protected body of described diaphragm.And then can also suppress the AC noise (noise) etc. of protected body and guarantee electrical specification.
Also have, in the formation method of said protection film, for example, can use any one material in silicon, monox, silicon nitride, the silit and in the formation operation of counterdie, deposit counterdie.And, form in the operation at described counterdie, the deposition of counterdie adopts sputter (sputtering) method to carry out, and particularly, the counterdie deposition in the formation operation of this counterdie has adopted ion beam sputtering method (Ion beam sputter) or magnetic control sputtering plating method (magnetron Sputter).
Also have, in the formation method of said protection film, it is that employing is carried out with respect to the oblique incidence ion beam milling method (Ion beam etching) of the film thickness direction oblique illumination ion beam of counterdie that the counterdie in the counterdie formation operation is removed step.And; before carrying out counterdie formation operation; also clean the surface clean operation of protected surface, and this surface clean operation is to adopt with respect to carrying out with the oblique incidence ion beam milling method of the direction oblique illumination ion beam of the Surface Vertical of protected body.Therefore,, promptly for protected body self, can suppress the energy that is applied in because of ion beam, can also alleviate damage (damage) this protected body for the face of removing counterdie or cleaning surface.In addition, by cleaning, can remove the natural oxide film of protected surface, and can improve the tack of formation counterdie thereon.
Also have, above-mentioned surface clean operation is to be undertaken by the oblique incidence ion beam milling method of having used the gas that contains argon gas (Argon).And, in the formation operation of above-mentioned insulation course, achieve insulating, thereby form insulation course by plasma treatment is carried out on the counterdie surface that forms diamond-like carbon film.At this moment, in the formation operation of this insulation course, use the mixed gas of argon gas and nitrogen to carry out plasma treatment.And what the plasma treatment of being undertaken by insulation course formation operation adopted is electron cyclotron resonance plasma method (Electron Cyclotron Resonance Plasma) or oblique incidence ion beam milling (Ion beam etching) method.In addition, form in the operation, adopt magnetic filtering cathode vacuum arc method (Filtered Cathodic VacuumArc at above-mentioned DLC film; FCVA) carry out the formation of diamond-like carbon film.
Another embodiment of the present invention provides a kind of manufacture method of protective, and it utilizes the formation method of said protection film to form diaphragm at least a portion surface of protected body, and produces protected body.For example, the manufacture method of this protected body can be a kind of manufacture method of head-slider, that is, utilize said protection film formation method to form diaphragm on the flying surface as the head-slider of protected body, and produce head-slider.
Another embodiment of the present invention provides a kind of protected body, and it has the diaphragm that the formation method by said protection film forms.And; be formed with diaphragm at least a portion position of this protected surface; this diaphragm comprises the counterdie of partly or entirely removing the link of this counterdie again after the counterdie that carries out on the surface of described protected body deposition regulation thickness repeatedly and being formed, and has diamond-like carbon film on this counterdie simultaneously.This diaphragm comprises that also the surface of the counterdie that can form described diamond-like carbon film is insulated the insulation course of having changed.In addition, described protected body can be a head-slider.
In addition, the invention still further relates to a kind of magnetic head fold piece combination (head gimbal assembly) with said head slide block.In the present invention can be applied to the to possess described magnetic head fold piece combination hard disk drive (hard disk drive) of (head gimbal assembly).
As described, particularly the present invention is applied in the diaphragm that is equipped on the head-slider in the hard disk drive, can shortens the distance between magnetic head element portion and the disk, can form thickness film as thin as a wafer, also can improve corrosion resistance.Thereby, when realizing the hard disk drive high record densityization, can also improve its reliability.
In sum, can form thickness according to the present invention as thin as a wafer and can suppress the diaphragm of film defective.Thereby compared to prior art, it is good that the present invention has corrosion resistance, and can realize being formed with the excellent results of high-qualityization etc. of the protected body of diaphragm.
Description of drawings
Fig. 1 is the synoptic diagram as the head-slider of protected body and formation diaphragm thereon.
Fig. 2 is the process flow diagram of expression head-slider manufacturing step.
Fig. 3 is the process flow diagram that the diaphragm in the expression head-slider manufacturing step forms step.
Fig. 4 is the manufacture process synoptic diagram that forms the head-slider of object as diaphragm, and Fig. 4 (a) represents wafer, and Fig. 4 (b), (c) represent stick.
Fig. 5 is the view when forming diaphragm on the surface of head-slider.
Fig. 6 is the view when forming diaphragm on the surface of head-slider.
Fig. 7 is the view when forming diaphragm on the surface of head-slider.
Fig. 8 is that expression is formed on the formation condition tabulation of test with the diaphragm on the head-slider.
Fig. 9 is the experimental result displayed map with head-slider of the diaphragm that forms under various conditions shown in Figure 8.
Figure 10 is the structural representation that has carried the magnetic head fold piece combination of the head-slider that is formed with diaphragm.
Figure 11 is the synoptic diagram that has carried the hard disk drive of the head-slider that is formed with diaphragm.
Figure 12 is illustrated in the process flow diagram that forms diaphragm among the embodiment of prior art.
Figure 13 is illustrated in the process flow diagram that forms diaphragm among another embodiment of prior art.
Embodiment
The diaphragm formation method that the embodiment of the invention relates to is characterized in that having the operation that forms feature on as the counterdie of a diaphragm part.Specifically, it is characterized in that having formed two hypoglyphs, and this two hypoglyph is earlier to deposit each counterdie respectively with the thickness that surpasses target film thickness, removes again afterwards that this counterdie forms until the mode that obtains required film thickness.Forming diamond-like carbon film on the counterdie and be provided with the feature of insulation course between the two but also have.
Below, explain the formation method of the diaphragm that the present invention relates to by specific embodiment.In specific embodiment, head-slider is illustrated as the object that forms diaphragm, certainly, protected body involved in the present invention is not limited in head-slider.The formation method of diaphragm provided by the invention is applicable to that also the diaphragm of any article of other electronic products etc. forms link.And, have according to all products of the formed diaphragm of method provided by the invention (protected body) and also belong within protection scope of the present invention.
First embodiment
Below in conjunction with Fig. 1 to Fig. 9 the first embodiment of the present invention is described.Head-slider and formation diaphragm have thereon been represented among Fig. 1 as protected body.Fig. 2 is the process flow diagram of expression head-slider manufacturing step, and Fig. 3 is the process flow diagram of expression as the formation step of the diaphragm of a head-slider part.Fig. 4 becomes the be connected synoptic diagram of the stick (bar-block) that forms of head-sliders that diaphragm forms object for expression is a plurality of.Fig. 5 to Fig. 7 forms the synoptic diagram of state for the expression diaphragm.Fig. 8 is the tabulation of explanation diaphragm formation condition, and Fig. 9 is the display list as a result after the head-slider with the diaphragm that forms is under various conditions experimentized.
In the present embodiment, described protected body is the head-slider 1 shown in Fig. 1 (a).This head-slider 1 has film and is formed at magnetic head portion 11 on the end of slide section 10.And, shown in Fig. 1 (b), formed diaphragm 2, make this diaphragm 2 can cover part surface as the flying surface of head-slider 1, particularly make this diaphragm 2 cover the position that read-write elements 12 is exposed from magnetic head portion 11.This Fig. 1 (b) is for being formed with the cross section skeleton diagram at that position of read-write elements 12 in the expression head-slider 1.
In the present embodiment; for head-slider 1 as shown in Figure 1; only formed diaphragm 2 on every side, but also can on other position, form diaphragm, formed diaphragm but also can go up whole of flying surface (ABS) at its position that is formed with read-write elements 12.The manufacture method that describes the head-slider 1 shown in Fig. 1 below in detail reaches the method that forms diaphragm 2 on this head-slider 1.
(the manufacture method summary of head-slider)
Below, with reference to Fig. 2 the summary of the manufacture method of head-slider 1 is described.At first, shown in Fig. 4 (a), can form operation [wafer operation (the step S1 among Fig. 2)] according to the film that has used photoetching methods such as (Photolithography), go up lamination at the wafer of making by pottery (Ceramics) material (wafer) 30 (matrix) and form the magnetic head portion 11 that forms by a plurality of thin layers.In described wafer operation, for example can use sputter (sputtering) device to wait equipment on the wafer that is positioned on the operator's console (table), to deposit the lamination material.And, also can on the film that is deposited, carry out operations such as (resist) against corrosion, exposure, phenomenon as required, and by etching (etching) device with film shaped be required form.Thus, shown in Fig. 4 (a), on almost whole on the wafer 30, form magnetic head portion 11.
Then, shown in Fig. 4 (b), the wafer 30 that is formed with magnetic head portion 11 shown in Fig. 4 (a) is cut into the stick 31 (the step S2 of Fig. 2) that is connected by a plurality of head-sliders 1.Cutting stick (bar-block) can carry out according to following operation in 31 o'clock, and for example, with the mould a plurality of sticks 31 of the clamping block that is connected and forms up and down, and stretching limit in limit cuts out stick 31 one by one with cutting tool along the vertical direction.In Fig. 4 (c), represented the stick 31 that cuts out.In addition, represented as dotted line among Fig. 4 (c), will cut into head-slider 1 one by one to every stick 31 according to this dotted line thereafter.
Then, can become the surface [grinding step (the step S3 of Fig. 2)] of stick 31 of the flying surface S of head-slider 1 with grinding (lapping) device grinding.Adjust the write element that is exposed on the flying surface S and the length of read element 12 by grinding.
Afterwards, after the grinding as the surface of the stick 31 of head-slider 1 flying surface S on form said protection film 2 (the step S4 of Fig. 2).At this moment, diaphragm 2 can be on the whole surface of flying surface S, formed, diaphragm 2 can also be on part surface, formed earlier.In addition, the formation method of diaphragm 2 will be explained below.
At last, from stick 31, cut out head-slider 1 (the step S5 of Fig. 2) one by one with the slide block cutter sweep.Thus, the position of wafer 30 has become slide section 12, and has formed the head-slider 1 that has magnetic head portion 11 in its end.And, on the flying surface S of each head-slider 1 that cuts out, form the ABS (the step S6 of Fig. 2) of regulation shape, and the predetermined processing of cleaning etc., thereby finish the manufacturing of head-slider 1.Certainly, described sequence of operation only is one of them embodiment, also can make head-slider 1 by other step or operation.
Below, describe the represented diaphragm formation method of step 4 among Fig. 2 in detail with reference to Fig. 3 to Fig. 7.At first, cleaning treatment [surface clean operation (the step S11 of Fig. 3)] is carried out on the surface 13 as the stick 31 of the flying surface S of head-slider 1 after grinding through the step S3 of Fig. 2.When carrying out this matting, can by relatively and the oblique incidence ion beam milling method of the perpendicular direction oblique illumination ion beam in the surface 13 of stick 31 carry out.In addition, in this ion beam milling method, be used to produce that the inert gas of ion uses is with the gas of argon gas (Ar) as principal ingredient.
Therefore, by the irradiation ion beam, can remove the natural oxide film on the surface 13 of stick 31, thereby can improve the tack of the counterdie (diaphragm) that is formed on thereafter on this surface 13.And, by the irradiation ion beam, can adjust the length of write element and read element.Particularly, owing to the surface 13 of stick 31 having been carried out the non-perpendicular ion beam irradiation that tilts, thereby can control the energy that these ion beams discharge stick 31.That is to say, and the vertical ion beam of surface 13 irradiation of stick 31 is compared, the preferred way that tilts and shine after certain angle with this vertical direction selected.Its result can alleviate because of cleaning treatment to the damage that the stick of being made up of head-slider 1 31 causes, can suppress the decline of quality.
Certainly, in above-mentioned surface clean operation, the gas that uses when carrying out the ion beam milling method has more than and is limited to mentioned component.And the method for cleaning also is not limited to the ion beam milling method, can adopt any cleaning method.But, should preferably select to the more low-energy cleaning method of the surface of stick 31 13 irradiations.
Then, on the surface 13 of the stick 31 after cleaning, deposition is the counterdie (counterdie formation operation) of principal ingredient as the part of diaphragm 2 and with silicon.Particularly, in the present embodiment, two hypoglyphs have been formed.In addition, the material of counterdie can be in silicon, monox, silicon nitride, the silit any one.To describe the formation operation of counterdie below in detail.
At first, on the surface 13 of the stick 31 shown in Fig. 5 (a), form first counterdie [first counterdie form operation (S12 of Fig. 3 step, S13)].Specifically, shown in Fig. 5 (b), adopt sputtering methods such as ion beam sputtering method or magnetic control sputtering plating method, deposition forms the counterdie 21 with regulation thickness on the surface 13 of the stick 31 that can become head-slider 1.At this moment, the thickness of the counterdie 21 of deposition is 1nm above (for example 3nm).Thus, it is few and be the counterdie 21 (Fig. 3 step S12) of continuous film to use sputtering method can form the film forming defective.
As Fig. 5 (c) or (c ') shown in, part or all that be deposited as counterdie 21 1nm more than removed (Fig. 3 step 13) with this make its thickness attenuation (for example less than 1nm) thereafter.At this moment, employing is removed the counterdie 21 of deposition to the oblique incidence ion beam milling method of the film thickness direction oblique illumination ion beam of counterdie 21.In addition, when adopting the ion beam milling method, the inert gas that is used to produce ion has used the gas that contains argon gas (Ar), and for example, argon content is 100% gas or is the gas of principal ingredient with the argon gas.
Thus, by the irradiation of ion beam, will remove the part of elder generation, thereby can form first counterdie 21 as thin as a wafer with the counterdie 21 of certain thickness deposition.
At this, identical with above-mentioned matting, carry out described removing when handling, owing to carried out non-perpendicular and ion beam irradiation relative film thickness direction inclination, thereby can control these ion beams and impose on stick 31 energy the surface 13 of stick 31.As a result, can alleviate stick 31 is the damage that head-slider 1 causes, thereby suppresses the decline of quality.
In addition, when removing counterdie, the element composition of the mensuration material surface that employing patent documentation 3 is disclosed and the ESCA determination method of bonding state are removed counterdie when measuring film thickness, until reaching aimed film thickness.For example, reached setting when following, can judge the counterdie of having removed specific thickness, thereby just can stop to remove processing when determine silicone content with the ESCA method.
Then, shown in Fig. 6 (a), on the surface 13 of stick 31, formed after first counterdie 21, form again the second counterdie 22[, second counterdie form operation (the step S14 of Fig. 3, S15)].Specifically, shown in Fig. 6 (b), adopt methods such as ion beam sputtering method or magnetic control sputtering plating method, deposition forms the counterdie 22 with regulation thickness on first counterdie 21 that is formed on the stick 31.At this moment, the film thickness of the counterdie 22 of deposition is 1nm above (for example 3nm).Thus, by using sputtering method, it is few and be the counterdie 22 of continuous film (the step S14 of Fig. 3) to form the film forming defective.In addition, same as above, the material of counterdie can be in silicon, monox, silicon nitride, the silit any one.
Afterwards, shown in Fig. 6 (c), remove a part (the step S15 of Fig. 3) that is deposited as the above counterdie 22 of 1nm, make the thickness attenuation (for example not enough 1nm) of its film.For example, remove counterdie and add that up to described first counterdie 21 gross thickness of second counterdie 22 is 0.8nm.The method that adopts when at this moment, removing the counterdie 22 that a part is deposited is the oblique incidence ion beam milling method of the film thickness direction oblique illumination ion beam of relative counterdie 22.In addition, when adopting the ion beam milling method, the inert gas that is used to produce ion has used the gas that contains argon gas, and for example, argon content is 100% gas or is the gas of principal ingredient with the argon gas.
Thus, by the ion beam of irradiation, part is removed the counterdie 22 that deposits with enough thick thickness earlier, so just can form thickness as thin as a wafer and be second counterdie 22 of continuous film.By in this way, can form thickness as thin as a wafer, the diaphragm of low defective.
In addition, removing when handling in the formation operation of carrying out described second counterdie 22, identical with the situation that forms above-mentioned first counterdie 21, because film thickness direction has been shone ion beam obliquely relatively, so can control the energy that this ion beam imposes on stick 31 self.As a result, can alleviate stick 31 is the damage that head-slider 1 causes, thereby suppresses the decline of quality.And, as mentioned above, when removing counterdie, adopt the element composition of patent documentation 3 disclosed mensuration material surfaces and the ESCA determination method of bonding state to measure film thickness, adjust required film thickness with this.
Then, on second counterdie 22, form the processing [insulation course forms operation (Fig. 3 step S16)] of insulation course.At this moment, same as above, because the thickness of counterdie 21,22 is very thin, there is the possibility of the insulativity decline of film itself.That is to say that impedance=resistance rate * thickness is so along with thickness attenuation impedance also can diminish, finally cause electric current to pass through.Occur in order to overcome this disadvantageous situation, formed insulation course.Specifically, carry out plasma treatment with argon gas, nitrogen or oxygen or their mixed gas on second bottom, 22 surfaces.In view of the above, shown in Fig. 7 (a), nitrogenize or oxidation make it form dielectric film 22a on the surface of second bottom 22.In addition, above-mentioned plasma treatment preferably adopts oblique incidence ion beam milling method or electron cyclotron resonance plasma method to carry out.Thus, same as above, preferably adopt low-energy method to alleviate damage to stick 31.At this moment, owing to be to adopt plasma processing to remove a part of second bottom 22, so when stating insulating in realization, also can further realize the purpose of filming.Certainly, the method on the surface of insulating second counterdie 22 has more than and is limited to said method.And, also can not make the surface insulationization of second counterdie 22, only other insulating material is set and forms insulation course and get final product on the surface of this second counterdie 22.
As mentioned above,, the insulativity of diaphragm 2 can be guaranteed, the purpose that improves corrosion resistance can also be reached by forming insulation course 22a.And, owing to kept the character of silicon or carbon constant, thereby particularly in the TMR magnetic head, 2 li of diaphragms remaining be called as the magnetic head noise composition of AC noise.The AC noise is the distinctive composition of TMR, can cause the partial short-circuit (Short) of sensor.Take place in order to block this short circuit phenomenon, preferably use the composition material of insulativity.Therefore, in order both to guarantee insulativity and don't change too many composition material that as mentioned above, preferable methods is to use Si to carry out nitrogenize or oxidation.Therefore, as mentioned above,, improved corrosion resistance by to being that the surface of the counterdie 22 of principal ingredient is carried out insulating and handled with silicon, and, can wait and guarantee electrical specification by reducing the AC noise.
And, handle by above-mentioned insulating, can also control film internal pressure important concerning filming.That is to say, be the counterdie of Main Ingredients and Appearance with silicon, can be used to improve the tack of carbon film, and also have the effect of controlled pressure simultaneously.Specifically, because of the rapid accumulation of internal pressure, internal pressure can cause above tack to be peeled off.Therefore, need change internal pressure gradually, so, handle by above-mentioned insulating, can interim control internal pressure.
Then, on above-mentioned counterdie 21,22, that is, be formed at depositing diamond-like carbon film 23[DLC film formation operation (Fig. 3 step S17) on the lip-deep insulation course 22a of second counterdie 22].For example, use magnetic filtering cathode vacuum arc method (Filtered Cathodic Vacuum Arc; FCVA) deposition forms diamond-like carbon film 23.When forming this DLC film, measure to determine to react between carbon film and the counterdie by ESCA and form the situation of SiC.In this operation, the desired value of the thickness of formed diamond-like carbon film 23 is 0.8nm.
According to above method, by second counterdie 22,22a and the DLC film 23 common diaphragms 2 that form of first counterdie 21, being insulated of surface.And, for this diaphragm 2,, make the continuous film of low defective with this by deposition of carrying out first counterdie 21 and second counterdie 22 repeatedly and the step of removing.And, plasma treatment is carried out on the surface of second counterdie 22 makes its insulating.By above structure, in head-slider 1 corrosion resistance that improves by diaphragm 2 protections, guarantee electrical specification thereby can also reduce undesirable constituents such as AC noise.
(corrosion resistance experiment)
Produce the head-slider 1 (sample) that forms diaphragm 2 according to various formation conditions (treatment process) respectively, and respectively each head-slider is carried out the test of corrosion resistance, and in Fig. 8 to Fig. 9, shown its test findings.
At first, all samples 1～16 all is to have same structure head-slider 1, and the manufacturing process of this head-slider 1 is also roughly the same.But, be treatment process with regard to the formation method of diaphragm 2, as shown in Figure 8, have nothing in common with each other.The sample 1～16 that produces according to various conditions is carried out high temperature and humidity test, and the corrosion test of acid dip test etc.And in each treatment process, the test of deposit corrosion simultaneously for the film thickness measuring stick, adopts above-mentioned ESCA determination method to calculate each thickness that constitutes diaphragm 2 with stick and film thickness measuring stick.In addition and since the measurement of thickness be directly have with corrosion test with the shape of stick much at one the film thickness measuring of shape carry out on stick, so error is minimum.And, by the value that the ESCA determination method is measured, all passed through the correction of transmission electron microscope (TEM).
Protect film formed treatment process to comprise following operation:
(1) adopt the oblique incidence ion beam milling method (IBE) of having used argon gas to carry out the surface clean of stick;
(2) adopt sputtering method depositing silicon counterdie;
(3) employing has been used argon gas to get oblique incidence IBE method and has been removed counterdie;
(4) adopt sputtering method depositing silicon counterdie once more;
(5) adopt the oblique incidence IBE method of having used argon gas to remove the superficial layer (adjusting required thickness) of counterdie;
(6) adopt the oblique incidence IBE method of the mixed gas that has used argon gas and nitrogen to carry out the nitrogen plasma processing, with the surface (have the surface a little and remove effect, thickness has approached about 0.2nm) of this nitrogenize counterdie;
(7) on this basis, adopt FCAV method depositing diamond-like carbon film (in addition, adopting the DLC film of FCVA method deposition to be also referred to as tetrahedral amorphous carbon (TtaC) film);
(8) etching DLC film (only sample 12 being carried out).
In addition, in the oblique incidence IBE method of record, for fear of stick is caused damage, set ion and can be 150V in above-mentioned (1), (3), (5), the angle of inclination is 65 degree.In addition, experimental rake angle is set at " 0 ", promptly relative vertical angle of inclination, the surface 13 of stick 31 has obtained tangible bad result after tested.Also have, in the nitrogen treatment of the oblique incidence IBE method of record, for the surface being removed the degree that effect is controlled at 0.2nm, setting ion can be 65 degree for 50V, angle of inclination, has suppressed the reduction of energy with this in (6).
In conjunction with above each treatment process (1)～(8), and the film thickness of change counterdie or DLC film, form various diaphragms, promptly form head-slider sample 1～16 with this diaphragm.Wherein, according to product provided by the present invention sample 6～11,13～16 is arranged.Just form behind two hypoglyphs its surface insulationization, and further form the product of DLC film.On the other hand, sample 1,2 mainly is the product that forms diaphragm with method of the prior art as shown in Figure 3, and sample 3～5th has carried out the product of insulation processing to it.In addition, sample 12 is the samples that form diaphragm with reference to Figure 13 according to patent documentation 2 disclosed methods.That is, sample 1～5 and 12 does not form two hypoglyphs according to the method described above, but has only the product of a hypoglyph.
And, to each sample carry out belong to corrosion test acid dip when test, according to earlier the stick of deposition being flooded 4 minutes in oxalic acid (oxalic acid) aqueous solution (0.025N), the order that calculates the slide block quantity that is corroded is then carried out.And, divided by the slide block number that drops into, represent rate of corrosion with the slide block number that corrodes with number percent (%).In addition, the corrosion of judging slide block with 1500 times observation by light microscope whether.Use two long strips, with 50 * 2=100 slide block as the sample radix.In addition, by high temperature and humidity test, respectively to before under 85 ℃, the environment of 85%RH, preserving 100 hours and sample afterwards carry out QST and measure, thereby the rate of change of measuring MRR is at the shared percent of the sample more than 5%.And, the slide block noise of measuring is, after scanning (sweep) successively according to the order of [0] Oe → [+300] Oe → [0] Oe → [300] Oe, when statistics applies [300] Oe and [300] Oe to being overlapped in noise composition on the main waveform greater than 1.2% crest, and count in each slide block this crest greater than 1.2% and added up the slide block number more than 150, afterwards divided by sum that drops into and the numerical value represented with %.
Like this, as shown in Figure 9, for high temperature and humidity test, all samples has all demonstrated low numerical value.And except sample 1,2, outside 12, the magnetic head noise of other samples has also all shown low numerical value.Moreover for the acid dip test, sample 6～11,13～16 has also shown the low numerical value below 20%.In addition, as shown in Figure 8, except that sample 1, the final thickness of other samples is all below 0.2nm.
According to above explanation; the diaphragm 2 that relates to for present embodiment; form and two-layerly again its part is removed the counterdie that forms through first deposition after having the counterdie of adequate thickness, (first counterdie 21 and second counterdie 22) can produce the continuous film that hangs down defective thus.Thereby can reach the purpose that improves corrosion resistance.Make its insulating by plasma treatment is carried out on the surface of second counterdie, can further realize improving the purpose of corrosion resistance like this, also can alleviate AC noise etc. simultaneously, also can guarantee electrical specification.As a result, can further improve the quality and the reliability of the protected bodies of being protected by said protection film 2 such as head-slider.
At this, the result that ESCA measures is, the peak position of N1s is 397.5～398eV, and the peak position of Si2p is 101.5～102eV.According to the disclosure of document, can learn and adopt Si
3N
4Situation under when N1s is 397.5eV Si2p be 101.6eV, thereby according to above-mentioned operation, it can be used as confirmation is manufactured with nitride film on the surface of second counterdie 22 evidence.
Second embodiment
Below, with reference to Figure 10 to 11 explanation second embodiment of the present invention.Figure 10 is the structural representation of the magnetic head fold piece combination (Head gimbal assembly) 50 that carries head-slider 1, and this head-slider 1 has the formed diaphragm 2 of formation method according to the diaphragm of above-mentioned first embodiment explanation.As shown in the drawing, for example, head-slider 1 is fixed on the micro-actuator (Micro-actualor) 60, and this micro-actuator 60 is carried on the tongue piece face that is formed at flexible element (Flexure) 51, this head-slider 1 mounting is on this tongue piece face simultaneously, and is carried on the magnetic head fold piece combination 50.In addition, for magnetic head fold piece combination 50, it also can not carry micro-actuator 60, but head-slider 1 directly is carried on the tongue piece face.
In addition, Figure 11 is the structural representation that carries the hard disk drive (Hard disk drive) 100 of said head tabs combination 50.This hard disk drive 100 comprises several pieces of disks, and the magnetic head fold piece combination 50 of corresponding each disk.That is, comprise magnetic head cantilever combination (Head stack assembly), and make that the disk face of each disk is relative with described head-slider 1 with a plurality of magnetic head fold piece combination 50.
As mentioned above, by carrying the magnetic head fold piece combination 50 of the head-slider 1 that first embodiment disclosed, and parts form hard disk drive 100 thus, can realize improving the high recording capacityization of this hard disk drive 100 and the purpose of reliability.
The formation method of diaphragm involved in the present invention can be applied to form on the surface of electronic products such as head-slider in the situation of diaphragm, has the utilizability on the industry.
Claims (23)
1. the formation method of a diaphragm is formed on diaphragm at least a portion surface of protected body, and it is characterized in that: this method comprises
The counterdie that forms counterdie on the surface of described protected body forms operation; And
The DLC film that forms diamond-like carbon film on described counterdie forms operation,
Wherein, form in the operation, carry out the link of after the counterdie of deposition regulation thickness, partly removing this counterdie again along film thickness direction repeatedly, thereby repeatedly form counterdie on the surface of protected body at described counterdie.
2. diaphragm formation method as claimed in claim 1 is characterized in that: this method comprises that also insulation course forms operation, thereby before carrying out described DLC film formation operation, forms insulation course on the counterdie surface of described formation diamond-like carbon film.
3. diaphragm formation method as claimed in claim 1 or 2, it is characterized in that: described counterdie forms after the counterdie of deposition regulation thickness on the surface that operation further is included in described protected body part again and removes this counterdie, thereby first counterdie that forms first counterdie forms link; And part is removed this counterdie again after depositing counterdie once more on first counterdie, thereby second counterdie that forms second counterdie forms link.
4. diaphragm formation method as claimed in claim 3 is characterized in that: form in the operation at described first counterdie, the deposition thickness is to remove this counterdie again after the above counterdie of 1nm, makes the thickness of its film less than 1nm.
5. diaphragm formation method as claimed in claim 4 is characterized in that: described second counterdie forms in the operation, and the deposition thickness is that the above counterdie of 1nm is removed this counterdie afterwards again, makes its film thickness less than 1nm.
6. as claim 1, each described diaphragm formation method in 2,4 or 5 is characterized in that: form in the operation at described counterdie, use any one material in silicon, monox, silicon nitride, the silit to deposit counterdie.
7. as claim 1, each described diaphragm formation method in 2,4 or 5 is characterized in that: form in the operation at described counterdie, adopt the oblique incidence ion beam milling method of the film thickness direction oblique illumination ion beam of relative counterdie to remove counterdie.
8. as claim 1; 2; each described diaphragm formation method in 4 or 5; it is characterized in that: this method also comprises the surface clean operation; thereby before carrying out described counterdie formation operation, clean the surface of protected body; and, adopt with respect to carrying out this surface clean operation with the oblique incidence ion beam milling method of the direction oblique illumination ion beam of the Surface Vertical of protected body.
9. diaphragm formation method as claimed in claim 8 is characterized in that: described surface clean operation is, contains by use that the oblique incidence ion beam milling method of the gas of argon gas carries out.
10. diaphragm formation method as claimed in claim 2 is characterized in that: form in the operation at described insulation course, achieve insulating by plasma treatment is carried out on the counterdie surface that forms diamond-like carbon film, thereby form described insulation course.
11. diaphragm formation method as claimed in claim 10 is characterized in that: form in the operation at described insulation course, use the mixed gas of argon gas and nitrogen to carry out plasma treatment.
12. diaphragm formation method as claimed in claim 11 is characterized in that: form in the operation at described insulation course, adopt electron cyclotron resonance plasma method or oblique incidence ion beam milling method to carry out described plasma treatment.
13. as claim 1, each described diaphragm formation method in 2,4 or 5 is characterized in that: form in the operation at described DLC film, adopt magnetic filtering cathode vacuum arc method to form described diamond-like carbon film.
14. the manufacture method of a protected body is characterized in that, this manufacture method adopts the described diaphragm of claim 1 to 13 formation method to form diaphragm at least a portion surface of protected body.
15. a protected body is characterized in that: this protected body has the diaphragm that forms by the described diaphragm of claim 1 to 13 formation method.
16. the manufacture method of a head-slider is characterized in that: this manufacture method adopts the described diaphragm of claim 1 to 13 formation method to form diaphragm on the flying surface as the head-slider of protected body.
17. a head-slider is characterized in that: this head-slider has the diaphragm that forms by the described diaphragm of claim 1 to 13 formation method.
18. protected body; on its at least a portion surface, be formed with diaphragm; it is characterized in that: described diaphragm comprises after the counterdie that carries out on the surface of described protected body deposition regulation thickness repeatedly along film thickness direction again partly removes the link of this counterdie and the counterdie that is formed, has diamond-like carbon film on this counterdie simultaneously.
19. protected body as claimed in claim 18 is characterized in that: described diaphragm comprises insulation course counterdie, being insulated of surface that can form described diamond-like carbon film.
20. head-slider; on at least a portion of its flying surface, be formed with diaphragm; it is characterized in that: described diaphragm comprises and carries out repeatedly after the counterdie of deposition regulation thickness partly removing the link of this counterdie and the counterdie that is formed along film thickness direction to have diamond-like carbon film on this counterdie simultaneously.
21. head-slider as claimed in claim 20 is characterized in that: described diaphragm comprises insulation course counterdie, being insulated of surface that can form described diamond-like carbon film.
22. a magnetic head fold piece combination, it comprises: described claim 17 or 20 or 21 described head-sliders.
23. a hard disk drive, it comprises: the described magnetic head fold piece combination of described claim 22.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101963995A CN101452706B (en) | 2007-11-28 | 2007-11-28 | Protection film forming method |
| JP2007331300A JP4898650B2 (en) | 2007-11-28 | 2007-12-25 | Method for forming protective film |
| US12/232,091 US8310788B2 (en) | 2007-11-28 | 2008-09-10 | Protective film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101963995A CN101452706B (en) | 2007-11-28 | 2007-11-28 | Protection film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101452706A CN101452706A (en) | 2009-06-10 |
| CN101452706B true CN101452706B (en) | 2011-08-17 |
Family
ID=40734906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101963995A Active CN101452706B (en) | 2007-11-28 | 2007-11-28 | Protection film forming method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4898650B2 (en) |
| CN (1) | CN101452706B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887730B (en) * | 2009-05-15 | 2014-04-30 | 新科实业有限公司 | Method for manufacturing magnetic head sliding block |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994035A (en) * | 1996-04-19 | 1999-11-30 | Nec Corporation | Method of producing magnetic head slider of the flying type having a protective coating |
| CN1691138A (en) * | 2004-04-23 | 2005-11-02 | 新科实业有限公司 | Thin-film magnetic head and manufacturing method, head gimbal assembly with thin-film magnetic head, and magnetic disk apparatus |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140225A (en) * | 1985-12-13 | 1987-06-23 | Sharp Corp | Floating type magnetic head |
| JP3538306B2 (en) * | 1998-01-08 | 2004-06-14 | 株式会社日立グローバルストレージテクノロジーズ | Thin film magnetic head and method of manufacturing the same |
| JP2003109339A (en) * | 2001-09-28 | 2003-04-11 | Tdk Corp | Magnetic head slider, method for manufacturing the same and head slider assembly |
| JP2003208703A (en) * | 2002-01-11 | 2003-07-25 | Hitachi Ltd | Magnetic recording head, manufacturing method therefor and carbon protective film forming device |
| JP2005302185A (en) * | 2004-04-14 | 2005-10-27 | Shinka Jitsugyo Kk | Thin-film magnetic head device, head gimbal assembly equipped with the same, magnetic disk device equipped with head gimbal assembly, and method for manufacturing thin-film magnetic head device |
| JP4077466B2 (en) * | 2005-05-26 | 2008-04-16 | Ｔｄｋ株式会社 | Magnetic head manufacturing method, head suspension assembly, and magnetic disk apparatus |
| JP2007026506A (en) * | 2005-07-14 | 2007-02-01 | Hitachi Global Storage Technologies Netherlands Bv | Magnetic head slider and method of manufacturing same |
-
2007
- 2007-11-28 CN CN2007101963995A patent/CN101452706B/en active Active
- 2007-12-25 JP JP2007331300A patent/JP4898650B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994035A (en) * | 1996-04-19 | 1999-11-30 | Nec Corporation | Method of producing magnetic head slider of the flying type having a protective coating |
| CN1691138A (en) * | 2004-04-23 | 2005-11-02 | 新科实业有限公司 | Thin-film magnetic head and manufacturing method, head gimbal assembly with thin-film magnetic head, and magnetic disk apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009134839A (en) | 2009-06-18 |
| CN101452706A (en) | 2009-06-10 |
| JP4898650B2 (en) | 2012-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7488429B2 (en) | Method of dry etching, method of manufacturing magnetic recording medium, and magnetic recording medium | |
| JP4947838B2 (en) | Ceramic substrate processing method and improved thin film magnetic recording head | |
| US7875372B2 (en) | Perpendicular magnetic recording medium and method of manufacturing the same | |
| KR20080086403A (en) | Metal oxynitride adhesion/corrosion barrier layer and a diamond-like carbon overcoat | |
| JP2004295989A (en) | Method for manufacturing magnetic recording medium, and magnetic recording medium | |
| WO2016145166A1 (en) | Tape head with thin tape bearing surface coating | |
| US8310788B2 (en) | Protective film forming method | |
| CN101452706B (en) | Protection film forming method | |
| US8420159B2 (en) | Method of fabricating magnetic head slider including partial removal step of protecting film | |
| CN1320523C (en) | Formation of a corrosion resistant layer on metallic thin films by nitrogen exposure | |
| CN101887730B (en) | Method for manufacturing magnetic head sliding block | |
| US7269889B2 (en) | Method of manufacturing a magnetic head | |
| US7237321B2 (en) | Method for fabricating a CPP magnetic transducer using CMP-assisted lift-off and a CMP-resistant metal layer | |
| CN205810377U (en) | Magnetic head protecting film, magnetic head, magnetic head fold piece combination and disc driver | |
| JP2005302185A (en) | Thin-film magnetic head device, head gimbal assembly equipped with the same, magnetic disk device equipped with head gimbal assembly, and method for manufacturing thin-film magnetic head device | |
| US20100302683A1 (en) | Magnetic head slider having ultra thin base layer with group 6a element and protective layer | |
| US8354034B2 (en) | Method of manufacturing a magnetic head | |
| JP3969727B2 (en) | Magnetic disk and magnetic recording apparatus | |
| US20080037167A1 (en) | Forming a head with reduced pole tip recession | |
| JP3691833B2 (en) | Thin film magnetic head substrate and manufacturing method thereof | |
| JP2007184099A (en) | Magnetic disk | |
| JP4890077B2 (en) | Manufacturing method of slider | |
| JPH01253816A (en) | Magnetic recording medium | |
| JP2004326964A (en) | Substrate for thin film magnetic head and its manufacturing method, and thin film magnetic head | |
| JPH10112018A (en) | Magnetic recording medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181009 Address after: Xinke center, six science and Technology Road East, Hongkong Science Park, Sha Tin, Hongkong, China Patentee after: Xinke Industry Co., Ltd. Address before: Chinese Hongkong Sha Hongkong Science Park Road No. six East New Technology Center Co-patentee before: Shimadzu Corp. Patentee before: Xinke Industry Co., Ltd. |
|
| TR01 | Transfer of patent right |