CN101447378A - Reflection type GaN ultraviolet light photo-cathode material structure and manufacture method thereof - Google Patents
Reflection type GaN ultraviolet light photo-cathode material structure and manufacture method thereof Download PDFInfo
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- CN101447378A CN101447378A CNA2008102333225A CN200810233322A CN101447378A CN 101447378 A CN101447378 A CN 101447378A CN A2008102333225 A CNA2008102333225 A CN A2008102333225A CN 200810233322 A CN200810233322 A CN 200810233322A CN 101447378 A CN101447378 A CN 101447378A
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Abstract
The invention provides a reflection type GaN ultraviolet light photo-cathode material structure and a manufacture method thereof. The structure consists of a substrate, an unintentionally adulterated GaN buffer layer, a p type GaN photoelectric emission layer and a Cs or Cs/O active layer which are arranged from top to bottom in the direction of thickness, wherein, the unintentionally adulterated GaN buffer layer grows on the substrate, the p type GaN photoelectric emission layer extends outwards and grows on the GaN buffer layer, and the Cs or Cs/O active layer adheres to the front surface of the p type GaN photoelectric emission layer, and thickness is measured by the magnitude order of nm. By adopting the unintentionally adulterated GaN material as the buffer layer between the substrate material and the p type GaN photoelectric emission material, the structure acquires a GaN photoelectric emission material with zero interface recombination rate; the invention increases the possibility of emitting electrons from the interface to vacuum, thereby finally enhancing the overall quantum efficiency of the GaN ultraviolet light photo-cathode; and as ultraviolet light with large wavelength is absorbed on the interface between the GaN photoelectric emission layer and the buffer layer, the material structure with zero interface recombination rate can acquire higher long wave ultraviolet sensitivity.
Description
Technical field
The invention belongs to the ultraviolet detection material technical field, be specifically related to the ultraviolet light photo-cathode material structure that a kind of based semiconductor material epitaxy technology, semi-conducting material doping techniques and ultra high vacuum surface activation technology combine.
Background technology
In recent years, along with improving and the development of ultra high vacuum technique of GaN material preparation technology, p type doping techniques, GaN ultraviolet light photo negative electrode is just becoming a kind of ultraviolet light photo negative electrode of novel high-performance.The surface of this negative electrode has negative electron affinity (NEA), be that the surface vacuum energy level of negative electrode is lower than in the body energy level at the bottom of the conduction band, therefore light induced electron only need run to the surface in the body, just can be transmitted into vacuum easily and need not the potential barrier that superfluous kinetic energy removes to overcome material surface, the escape probability of electronics increases greatly like this, and be cold electron emission, therefore has the quantum efficiency height, dark emission is little, distinct advantages such as the emitted electron energy distribution is concentrated, its quantum efficiency is generally 30%, the quantum efficiency that is much higher than traditional cesium telluride ultraviolet light photo negative electrode 10% with positron affinity (PEA), and, GaN material energy gap is at～3.6eV, the following ultra-violet radiation of response 400nm is typical " day is blind " material, has good capability of resistance to radiation.
GaN ultraviolet light photo negative electrode can be worked under reflective or transmission-type.When light from the incident of negative electrode front surface and electronics is reflective work during surface emitting in the past also; When light from the rear surface incident of negative electrode and electronics is transmission-type work during surface emitting in the past.Reflective GaN ultraviolet light photo-cathode material structure generally comprises backing material (normally sapphire), epitaxial growth p type GaN photoemissive material and the low work function active coating on substrate from bottom to top.Wherein between backing material and the p type GaN material because material lattice constant difference big (about 16%), lattice does not match, therefore can cause these two kinds of material interfaces to produce bigger interface recombination rate, can in the photoelectron emissions process, capture the free electron that is excited, thereby reduce electronics emission quantity, finally cause a lower cathode quantum efficiency.
Find that by literature search the reflection type GaN ultraviolet light photo negative electrode of external preparation generally adopts the AlN resilient coating to overcome the problems referred to above that lattice does not match and causes between backing material and p type GaN material.The lattice constant difference of AlN material and GaN material is about 3%, so the two can better mate.This structure is compared with the GaN material structure of direct extension on substrate, the photoelectric emission performance improves, but owing to still have certain crystal lattice difference between padded coaming AlN and the photoemissive material GaN, therefore still there is certain interface recombination rate in the interface between these two kinds of materials, influences the emission of electronics.
Summary of the invention
Have above-mentioned deficiency at prior art, the interface recombination rate that the purpose of this invention is to provide a kind of GaN photoemissive material is zero reflection type GaN ultraviolet light photo-cathode material new structure.
The object of the present invention is achieved like this: a kind of reflection type GaN ultraviolet light photo-cathode material structure is characterized in that this material structure is made of GaN resilient coating, p type GaN photoemissive layer and Cs or the Cs/O active coating of substrate, involuntary doping at thickness direction from bottom to top; Wherein, the GaN buffer growth of involuntary doping is on substrate, and thickness is between 10-200nm; P type GaN photoelectric emission layer epitaxially grown is on described GaN resilient coating, and thickness is between 100-200nm, and doping content is 10
17-10
19Cm
-3Between; Cs or Cs/O active coating are adsorbed on the front surface of p type GaN photoemissive layer, and thickness is at the nm order of magnitude.
The manufacture method of described reflection type GaN ultraviolet light photo-cathode material structure comprises the steps:
Step 1: the upper surface that has polished in Sapphire Substrate, the GaN resilient coating of the involuntary doping of the epitaxial growth technology growth 10-200nm thickness by semi-conducting material;
Step 2: then,, on the GaN resilient coating that step 1 obtains, grow 100-200nm thickness, doping content 10 by the p type doping process of epitaxial growth technology and GaN material
17-10
19Cm
-3P type GaN photoemissive layer as photoemissive material, the epitaxial material of the growth that obtains;
Step 3: the epitaxial material of the growth that step 2 is obtained is removed grease through chemical cleaning; Again it is sent in the ultra-high vacuum system, under 700-900 ℃, material surface carried out 10-30 minutes the thermal purification that adds, make material surface reach the atom level clean level;
Step 4: the p type GaN material surface absorption monolayer Cs or the multi-layer C s/O that step 3 are obtained by activation technology form Cs or Cs/O active coating, finally prepare the GaN ultraviolet light photo negative electrode with negative electron affinity.
Compared to existing technology, the present invention has following beneficial effect:
(1) the present invention proposes the reflective ultraviolet light photo-cathode material structure that a kind of based semiconductor material epitaxy technology, semi-conducting material doping techniques and ultra high vacuum surface activation technology combine, this structure adopts the GaN material of involuntary doping as the resilient coating between backing material and the p type GaN photoemissive material, thereby obtains to have the GaN photoemissive material of zero interface recombination rate; Improved at the interface that electronics is transmitted into the probability of vacuum, and finally improved the overall quantum efficiency of GaN ultraviolet light photo negative electrode.
(2) since long wavelength's ultraviolet light will be between GaN photoemissive layer and resilient coating absorption at the interface, therefore the material structure of this zero interface recombination rate can obtain higher long wave ultraviolet sensitivity.
(3) this ultraviolet light photo-cathode material structure can be used as a kind of cold electron source of ultraviolet efficiently, is applied to devices such as microwave tube, circular accelerator meter; Also can be used as the light-sensitive element of active ultraviolet detector, be applied to fields such as ultraviolet alarm.
Description of drawings
Fig. 1 is the layer structural representation of GaN ultraviolet light photo-cathode material of the present invention;
Fig. 2 is the fundamental diagram of the GaN ultraviolet light photo-cathode material of invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1: as shown in Figure 1, a kind of reflection type GaN ultraviolet light photo-cathode material structure, this material structure are made of GaN resilient coating 2, p type GaN photoemissive layer 3 and Cs or the Cs/O active coating 4 of substrate 1 (as sapphire), involuntary doping from bottom to top; Wherein, the GaN resilient coating 2 of involuntary doping is grown on the substrate 1 by the semiconductor epitaxial growing technology, and thickness is 50nm; 3 epitaxial growths of p type GaN photoemissive layer are on described GaN resilient coating 2, and thickness is 100nm, and doping content is 5 * 10
17On the front surface of p type GaN photoemissive layer 3, thickness is a monoatomic layer to Cs active coating 4 by ultra high vacuum activation technology adsorbed close.
Embodiment 2: with implement 1 different be that the thickness of GaN resilient coating 2 is 100nm; 3 epitaxial growths of p type GaN photoemissive layer are on described GaN resilient coating 2, and thickness is 100nm, and doping content is 5 * 10
17On the front surface of p type GaN photoemissive layer 3, thickness is a monoatomic layer to Cs active coating 4 by ultra high vacuum activation technology adsorbed close.
Embodiment 3: with implement 1 different be that the thickness of GaN resilient coating 2 is 100nm; 3 epitaxial growths of p type GaN photoemissive layer are on described GaN resilient coating 2, and thickness is 150nm, and doping content is 5 * 10
17On the front surface of p type GaN photoemissive layer 3, thickness is a monoatomic layer to Cs active coating 4 by ultra high vacuum activation technology adsorbed close.
The manufacture method of above-mentioned reflection type GaN ultraviolet light photo-cathode material structure is: at first, the upper surface that has polished in Sapphire Substrate 1, the GaN resilient coating 2 of the involuntary doping by thickness as described in epitaxial growth technology (as metal oxide chemical vapor deposition MOCVD, the molecular beam epitaxy MBE etc.) growth of semi-conducting material; Secondly, at the p type doping process by identical epitaxial growth technology and GaN material, the described thickness of growth, doping content are 10 on GaN resilient coating 2
17-10
18Cm
-3P type GaN photoemissive layer 3 as photoemissive material; Then, the epitaxial material of the growth that obtains is removed grease through chemical cleaning (as utilizing the hydrofluoric acid clean material surface of purity 50%); Again it is sent in the ultra-high vacuum system and heat,, make material surface reach the atom level clean level as under 900 ℃, material surface being carried out 20 minutes the thermal purification that adds; At last, make p type GaN material surface absorption monolayer Cs or multi-layer C s/O, finally prepare GaN ultraviolet light photo negative electrode with negative electron affinity by activation technology.
The operation principle of reflection type GaN ultraviolet light photo-cathode material structure of the present invention is: this ultraviolet light photo-cathode material is reflective work, be that ultraviolet light goes into to shine from the front surface of negative electrode, absorbed by p type GaN photoemissive layer through active coating 4, the light of shorter wavelength absorbs on GaN photoemissive layer 3 surfaces, the light of longer wavelength absorbs in GaN photoemissive layer 3 bodies, and more long wavelength's light will be in the absorption at the interface between GaN photoemissive layer 3 and the resilient coating 2; After absorbing photon, GaN photoemissive layer 3 obtains energy, when incident photon energy during greater than the energy gap (3.4eV) of GaN material, the electronics that is in valence band just can transit to conduction band becomes free electron, and these free electrons arrive cathode surface and are transmitted into vacuum by diffusion.For the free electron that produces at the interface, because the GaN material that adopts involuntary doping among the present invention is as resilient coating 2, it and p type GaN photoemissive layer 3 are same materials, so do not have the interface recombination rate, thereby have avoided electronics compound at the interface.After electronics is transmitted into vacuum, collected, and export with the photoelectric current form by adding Acquisition Circuit by plus high-pressure.The ultraviolet light of incident is strong more, and the photon energy that GaN absorbs is just many more, and the photoelectric current of output is big more.
The present invention is not limited to the restriction of described enforcement to the thickness of resilient coating, photoelectric emission layer thickness and active coating, as long as the simple change of being done on the structure of technical solution of the present invention all falls into protection scope of the present invention.
Claims (5)
1, a kind of reflection type GaN ultraviolet light photo-cathode material structure, it is characterized in that this material structure is made of GaN resilient coating (2), p type GaN photoemissive layer (3) and Cs or the Cs/O active coating (4) of substrate (1), involuntary doping at thickness direction from bottom to top.
2, reflection type GaN ultraviolet light photo-cathode material structure according to claim 1 is characterized in that, the GaN resilient coating (2) of described involuntary doping is grown on the substrate (1), and thickness is between 10-200nm.
3, reflection type GaN ultraviolet light photo-cathode material structure according to claim 1 is characterized in that, described p type GaN photoemissive layer (3) epitaxial growth is on described GaN resilient coating (2), and thickness is between 100-200nm, and doping content is 10
17-10
19Cm
-3Between.
4, reflection type GaN ultraviolet light photo-cathode material structure according to claim 1 is characterized in that, described Cs or Cs/O active coating (4) are adsorbed on the front surface of p type GaN photoemissive layer (3), and thickness is at the nm order of magnitude.
5, make the method for the described reflection type GaN ultraviolet light photo-cathode material structure of claim 1, comprise the steps:
Step 1: the upper surface that has polished in Sapphire Substrate (1), the GaN resilient coating (2) of the involuntary doping of the epitaxial growth technology growth 10-200nm thickness by semi-conducting material;
Step 2: then,, go up growth 100-200nm thickness, doping content 10 at the GaN resilient coating (2) that step 1 obtains by the p type doping process of epitaxial growth technology and GaN material
17-10
19Cm
-3P type GaN photoemissive layer (3) as photoemissive material, the epitaxial material of the growth that obtains;
Step 3: the epitaxial material of the growth that step 2 is obtained is removed grease through chemical cleaning; Again it is sent in the ultra-high vacuum system and carry out, under 700-900 ℃, material surface carried out 10-30 minutes the thermal purification that adds, make material surface reach the atom level clean level;
Step 4: the p type GaN material surface absorption monolayer Cs or the multi-layer C s/O that step 3 are obtained by activation technology form Cs or Cs/O active coating (4), finally prepare the GaN ultraviolet light photo negative electrode with negative electron affinity.
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| CN100595858C CN100595858C (en) | 2010-03-24 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102087937A (en) * | 2011-01-07 | 2011-06-08 | 南京理工大学 | Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof |
| CN102280331A (en) * | 2011-07-12 | 2011-12-14 | 北京工业大学 | Field emission cathode with electron emission-enhanced mixed phase nitride film and preparation method of field emission cathode |
| CN103295855A (en) * | 2013-05-29 | 2013-09-11 | 南京理工大学 | Index-doped reflecting-type GaAs (gallium arsenide) photoelectric cathode and production method thereof |
| CN105428183A (en) * | 2015-11-17 | 2016-03-23 | 南京理工大学 | Reflective NEA GaN nanowire array photoelectric negative electrode and manufacturing method therefor |
| CN114121572A (en) * | 2021-11-22 | 2022-03-01 | 徐源 | Novel photoelectric emission material and preparation method thereof |
-
2008
- 2008-12-11 CN CN200810233322A patent/CN100595858C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102087937A (en) * | 2011-01-07 | 2011-06-08 | 南京理工大学 | Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof |
| CN102280331A (en) * | 2011-07-12 | 2011-12-14 | 北京工业大学 | Field emission cathode with electron emission-enhanced mixed phase nitride film and preparation method of field emission cathode |
| CN102280331B (en) * | 2011-07-12 | 2013-10-02 | 北京工业大学 | Field emission cathode with electron emission-enhanced mixed phase nitride film and preparation method of field emission cathode |
| CN103295855A (en) * | 2013-05-29 | 2013-09-11 | 南京理工大学 | Index-doped reflecting-type GaAs (gallium arsenide) photoelectric cathode and production method thereof |
| CN105428183A (en) * | 2015-11-17 | 2016-03-23 | 南京理工大学 | Reflective NEA GaN nanowire array photoelectric negative electrode and manufacturing method therefor |
| CN114121572A (en) * | 2021-11-22 | 2022-03-01 | 徐源 | Novel photoelectric emission material and preparation method thereof |
| CN114121572B (en) * | 2021-11-22 | 2022-10-18 | 徐源 | Novel photoelectric emission material and preparation method thereof |
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|---|---|
| CN100595858C (en) | 2010-03-24 |
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