CN101446929A - Operating method for storing equipment, controller and communication system - Google Patents
Operating method for storing equipment, controller and communication system Download PDFInfo
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- CN101446929A CN101446929A CN 200810182701 CN200810182701A CN101446929A CN 101446929 A CN101446929 A CN 101446929A CN 200810182701 CN200810182701 CN 200810182701 CN 200810182701 A CN200810182701 A CN 200810182701A CN 101446929 A CN101446929 A CN 101446929A
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- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
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Abstract
The embodiment of the invention discloses an operating method for storing equipment, a controller and a communication system. The operating method for the storing equipment comprises: prearranged threshold value storing units in the storing equipment are bound into a combined storing unit, and a minimum unit for operating the storing equipment is arranged according to the prearranged threshold value; the combined storing unit is simultaneously operated according to the arranged minimum unit. The embodiment of the invention binds the prearranged threshold value storing units in the storing equipment into the combined storing unit, arranges the minimum unit for operating the storing equipment according to the prearranged threshold value and simultaneously operates the combined storing unit according to the arranged minimum unit. Therefore, prearranged threshold value combined storing units can be simultaneously operated when the storing equipment is operated, and the operating speed for the storing equipment can be improved.
Description
Technical field
The present invention relates to communication technical field, relate in particular to a kind of memory device method of operating, controller and communication system.
Background technology
Along with the fast development of computing machine, people are also more and more higher to the requirement of the response speed of external memory devices.
In the prior art, all be based on monolithic (block) or single page (page) for the management of flash memory (flash), that is to say, controller at every turn to the reading and writing of flash, wipe or duplicate (copy-back) and operate in a face (plane) the inside.
In realizing process of the present invention, the inventor finds that there is following defective at least in technique scheme:
Since controller at every turn to the reading and writing of flash, wipe or replicate run all is to carry out a plane the inside, so operating speed is slow, the operation execution time is long.
Summary of the invention
The embodiment of the invention provides a kind of memory device method of operating, controller and communication system, and the technical scheme of using the embodiment of the invention to provide can improve the operating speed to memory device.
The purpose of the embodiment of the invention is achieved through the following technical solutions:
A kind of memory device method of operating comprises:
The storage unit of preset threshold value in the memory device is bundled into a composite store cell;
The least unit that described memory device is operated is set according to described preset threshold value;
According to the described least unit that is provided with described composite store cell is operated simultaneously.
A kind of controller comprises:
The binding unit is used for a memory device preset threshold value storage unit is bundled into a composite store cell;
The unit is set, is used for the least unit that described memory device is operated being set according to the described preset threshold value that described binding unit uses;
Operating unit is used for according to the described described least unit that the unit setting is set described composite store cell being operated simultaneously.
A kind of communication system comprises:
Memory device comprises at least two storage unit;
Controller is used for a described memory device preset threshold value storage unit is bundled into a composite store cell; The least unit that described memory device is operated is set according to described preset threshold value; According to the described least unit that is provided with described composite store cell is operated simultaneously.
The above technical scheme that provides from the embodiment of the invention as can be seen, because the storage unit of preset threshold value in the memory device is bundled into a composite store cell, the least unit that described memory device is operated is set according to above-mentioned preset threshold value, according to the described least unit that is provided with described composite store cell is operated simultaneously, make when memory device operated, can operate simultaneously a preset threshold value composite store cell, can promote operating speed memory device.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a kind of memory device method of operating process flow diagram that the embodiment of the invention one is set forth;
Fig. 2 is the method flow diagram of a kind of flash disk operation of the embodiment of the invention two elaborations;
Fig. 3 is a kind of concrete binding mode synoptic diagram that the embodiment of the invention two is set forth;
Fig. 4 is the method flow diagram of a kind of flash disk operation of the embodiment of the invention three elaborations;
Fig. 5 is a kind of concrete binding mode synoptic diagram that the embodiment of the invention three is set forth;
Fig. 6 is the composition synoptic diagram of a kind of controller of embodiment of the invention elaboration;
Fig. 7 is the composition frame chart of a kind of communication system of embodiment of the invention elaboration.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
The embodiment of the invention provides a kind of memory device method of operating, controller and communication system, and the technical scheme of using the embodiment of the invention to provide can improve the operating speed to memory device.
The memory device that the embodiment of the invention is mentioned can be meant flash memory, only is that example describes below with the flash memory.
The characteristic of the flash of the application that the embodiment of the invention is mentioned is:
When 1, flash being carried out write operation, can be simultaneously carry out read-write operation to the same page of two plane the insides, but requirement must be the plane 0 of same layer the inside and plane 1 or the time plane 2 and plane 3; Certainly, also can carry out read-write operation to the same page of four plane the insides simultaneously, perhaps the same page inside 2 the exponent plane be carried out read-write operation.
2, can carry out erase operation to the same block inside two plane simultaneously, certainly, also can carry out erase operation to the same block inside four plane simultaneously, perhaps the same block inside 2 the exponent plane is carried out erase operation, erase operation can only be to piece, can not be that page or leaf is wiped; In general, one comprises 64 pages or 128 pages.Equally also requirement must be plane0 and plane 1 or the plane 2 and the plane 3 of same layer the inside.Wherein, plane the 0,1,2, the 3rd, arranges according to the position of flash the inside, can illustrate accordingly in flash data the inside usually.
3, when carrying out the copy-back operation, can carry out the operation of copy-back simultaneously to the data of two plane.
The copy-back operation, it is a mode of operation among the flash, it is exactly the operation that flash copies to the data of a page or leaf in inside another page, but requiring is two pieces among the plane of coexisting, or the plane 0 and the plane 1 of same layer (layer) the inside, or plane 2 page or leaf identical with position among the plane 3.
Embodiment one
Present embodiment is set forth a kind of memory device method of operating, by this method, can improve the operating speed to memory device.
Be elaborated below in conjunction with accompanying drawing, referring to Fig. 1, the method for present embodiment may further comprise the steps:
Step 101: the storage unit of preset threshold value in the memory device is bundled into a composite store cell;
Top memory device can be meant flash memory.
Said memory cells can be meant arbitrary in face, piece or the page or leaf, but also can be other storage unit.Wherein preset threshold value can be 2 exponential depth, promptly can be that face, piece or the page or leaf with 2 exponential depth in the flash memory is bundled into a combinatorial surface, piece or page or leaf.For example, can be that two faces in the flash memory are bundled into a combinatorial surface; Also can be that four faces in the flash memory are bundled into a combinatorial surface.
Perhaps, also can be that the piece of preset threshold value in the flash memory is bundled into a combination block.At this moment can improve the speed that flash memory is wiped.
Perhaps, also can be just in the flash memory preset threshold value page or leaf be bundled into a combined page.At this moment can improve flash memory is read and write or the speed of copy-back.
Step 102: the least unit that described memory device is operated is set according to described preset threshold value.
Above-mentioned memory device can be meant flash memory.
Above-mentioned memory device is operated can be that flash memory is carried out read-write operation, also can be to carry out erase operation, can also be to carry out the copy-back operation, but be not limited to only carry out aforesaid operations.
If be that two faces in the flash memory are bundled into a combinatorial surface in the step 101, step 102 a minimum read-write cell is set to two pages so, and minimum unit of erase is set to two.
If be that four faces in the flash memory are bundled into a combinatorial surface in the step 101, step 102 a minimum read-write cell is set to four pages so, and minimum unit of erase is set to four.
If be that piece with preset threshold value in the flash memory is bundled into a combination block in the step 101, step 102 item is provided with the least unit that described flash memory is wiped according to described preset threshold value so.
If be that page or leaf with preset threshold value in the flash memory is bundled into a combined page in the step 101, step 102 item is provided with the least unit that described flash memory is read and write according to described preset threshold value so.
Step 103: described composite store cell is operated simultaneously according to the described least unit that is provided with.
Can be according to the described minimum read-write that is provided with, wipe or replicator is read and write simultaneously, wiped or replicate run composite store cell.For example, can be that the same page in the preset threshold value face after the binding is read and write or the copy-back operation simultaneously, also can be the same block in the preset threshold value face after the binding is carried out erase operation simultaneously.Certainly, also can be that the same memory cell in other storage unit that bundlees the back preset threshold value is operated simultaneously.
Present embodiment is owing to be bundled into a composite store cell with the storage unit of preset threshold value in the memory device, the least unit that described memory device is operated is set according to above-mentioned preset threshold value, according to the described least unit that is provided with described composite store cell is operated simultaneously, make when memory device operated, can operate a preset threshold value composite store cell simultaneously, can promote operating speed memory device.
Further, owing to just minimum operation unit has been enlarged preset threshold value doubly, can also continue to use the technology of the storage device management of former accumulation.
Embodiment one has set forth a kind of memory device method of operating, and the following examples two and embodiment three set forth the example of two kinds of binding addresses respectively.
Embodiment two
Present embodiment is set forth and a kind of two plane to be bundled into the method for a combination plane, by this method, can improve flash memory is read and write, wiped or the speed of replicate run.
Be elaborated below in conjunction with accompanying drawing, referring to Fig. 2, the method for present embodiment can may further comprise the steps:
Step 201: plane 0 and plane 1 are bundled into a big plane, are designated as combinatorial surface (Bplane 0), plane 2 and plane 3 are bundled into a big plane, be designated as Bplane 1;
Step 202: the minimum unit of read-write is made as combined page (Bpage)=2page, and minimum unit of erase is made as combination block (Bblock)=2block;
Its address relationship mapping relations are referring to shown in Figure 3, and Fig. 3 is the synoptic diagram that how plane0 and plane1 is bundled into the binding address of a Bplane0 in the expression present embodiment.
Step 203: is management unit carrying out flash when management with Bpage or Bblock.
When carrying out read-write operation, all be simultaneously the same page of two plane to be operated like this, also be that two plane same blocks are operated when carrying out erase operation at every turn at every turn, effectively improved read-write and the erasing speed of flash.Also can improve simultaneously the speed of the operation of copy-back.
Concrete binding mode can be referring to Fig. 3, Fig. 3 is the synoptic diagram that how plane 0 and plane 1 is bundled into the binding address of a Bplane 0 in the expression present embodiment, among the figure, two plane 0 among the original plane and plane 1 are bundled, become a Bplane 0.
Present embodiment is owing to be bundled into a combinatorial surface with two faces in the flash memory, be provided with according to binding number (two) flash memory is read and write, wiped or the least unit of replicate run, make when flash memory read and write, wipes or duplicate, can read and write, wipe or duplicate piece in two faces or page or leaf simultaneously, can promote operating speed flash memory.
Further, owing to just minimum operation unit has been enlarged twice, can also continue to use the technology of the flash memory management of former accumulation.
Embodiment two has set forth and a kind of two faces has been bundled into the method for a combinatorial surface, and the following examples three are set forth a kind of method that four faces is bundled into a combinatorial surface.
Embodiment three
Present embodiment is set forth and a kind of four plane to be bundled into the method for a combination plane, by this method, can improve flash memory is read and write, wiped or the speed of replicate run.
Be elaborated below in conjunction with accompanying drawing, referring to Fig. 4, the method for present embodiment can may further comprise the steps:
Step 401: plane 0, plane 1, plane 2 and plane 3 are bundled into a big plane, are designated as Bplane.
Step 402: the unit of read-write is made as Bpage=4page with minimum, and minimum unit of erase is made as Bblock=4block;
Its address relationship mapping relations are referring to shown in Figure 5, and Fig. 5 is the synoptic diagram that how plane0, plane1, plane2 and plane3 is bundled into the binding address of a Bplane in the expression present embodiment.
Step 403: is management unit carrying out flash when management with Bpage or Bblock.
When carrying out read-write operation, all be simultaneously the same page of four plane to be operated like this, when carrying out erase operation, also be simultaneously four plane same blocks to be operated at every turn at every turn, effectively improved writing and erasing speed of flash.Also can improve simultaneously the operating speed of copy-back.
Concrete binding mode can be referring to Fig. 5, Fig. 5 is the synoptic diagram that how plane0, plane1, plane2 and plane3 is bundled into the binding address of a Bplane in the expression present embodiment, among the figure, plane0 among the original plane, plane1, plane2 and plane3 are bundled, become a Bplane.
Present embodiment is owing to be bundled into a combinatorial surface with four faces in the flash memory, be provided with according to binding number (four) flash memory is read and write, wiped or the least unit of replicate run, make when flash memory read and write, wipes or duplicate, can read and write, wipe or duplicate piece in four faces or page or leaf simultaneously, can promote operating speed flash memory.
Further, owing to just minimum operation unit has been enlarged four times, can also continue to use the technology of the flash memory management of former accumulation.
Need to prove, for aforesaid each method embodiment, for simple description, so it all is expressed as a series of combination of actions, but those skilled in the art should know, the present invention is not subjected to the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in the instructions all belongs to preferred embodiment, and related action and module might not be that the present invention is necessary.
In the above-described embodiments, the description of each embodiment is all emphasized particularly on different fields, do not have the part that describes in detail among certain embodiment, can be referring to the associated description of other embodiment.
A kind of memory device method of operating more than is provided, and the embodiment of the invention also provides a kind of controller and a kind of communication system.
At first set forth a kind of controller.
Referring to Fig. 6, a kind of controller can comprise:
Binding unit 601 is used for a memory device preset threshold value storage unit is bundled into a composite store cell;
Above-mentioned memory device can be meant flash memory, and said memory cells can be face, piece or page or leaf, but also can be other storage unit.
Above-mentioned memory device is operated can be meant flash memory is read and write, wiped or replicate run, but also can be meant the operation of flash memory being carried out other.
Can be composite store cell to be carried out read-write operation simultaneously according to the minimum read-write unit that is provided with, according to the minimum unit of erase that is provided with composite store cell is carried out erase operation simultaneously, composite store cell is carried out replicate run simultaneously according to the minimum replicator that is provided with.
Wherein, the above-mentioned unit 602 that is provided with comprises:
The read-write unit is provided with the unit, is used for the minimum unit of read-write is set to the preset threshold value number of pages;
Erase unit is provided with the unit, is used for minimum unit of erase and is set to preset threshold value piece number.
Above-mentioned controller can be used to a kind of memory device method of operating of realizing that the embodiment of the invention is mentioned, but is not limited to realize this method.
Set forth a kind of communication system below, referring to Fig. 7, a kind of communication system can comprise:
Wherein, the controller in the above-mentioned communication system can comprise binding unit 601 shown in Figure 6, unit 602 and operating unit 603 are set.
The embodiment of the invention is owing to be bundled into a composite store cell with the storage unit of preset threshold value in the memory device, the least unit that described memory device is operated is set according to above-mentioned preset threshold value, according to the described least unit that is provided with described composite store cell is operated simultaneously, make when memory device operated, can operate simultaneously the composite store cell of preset threshold value, can promote operating speed memory device.
One of ordinary skill in the art will appreciate that all or part of step that realizes in the foregoing description method is to instruct relevant hardware to finish by program, described program can be stored in a kind of computer-readable recording medium, this program comprises the steps: when carrying out
The storage unit of preset threshold value in the memory device is bundled into a composite store cell;
The least unit that described memory device is operated is set according to described preset threshold value;
According to the described least unit that is provided with described composite store cell is operated simultaneously.
The above-mentioned storage medium of mentioning can be a ROM (read-only memory), disk or CD etc.
More than a kind of memory device method of operating, controller and communication system that the embodiment of the invention provided are described in detail, the explanation of above embodiment just is used for help understanding method of the present invention and thought thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (11)
1, a kind of memory device method of operating is characterized in that, comprising:
The storage unit of preset threshold value in the memory device is bundled into a composite store cell;
The least unit that described memory device is operated is set according to described preset threshold value;
According to the described least unit that is provided with described composite store cell is operated simultaneously.
2, memory device method of operating according to claim 1 is characterized in that, the described step that the storage unit of preset threshold value in the memory device is bundled into a composite store cell is specially:
The piece of preset threshold value in the memory device is bundled into a combination block;
The described step that the least unit that described memory device is operated is set according to described preset threshold value is specially:
The least unit that described memory device is wiped is set according to described preset threshold value;
Described step of described composite store cell being operated simultaneously according to the described least unit that is provided with is specially:
According to the described least unit of wiping that is provided with described combination block is wiped simultaneously.
3, memory device method of operating according to claim 1 is characterized in that, the described step that the storage unit of preset threshold value in the memory device is bundled into a composite store cell is specially:
The page or leaf of preset threshold value in the memory device is bundled into a combined page;
The described step that the least unit that described memory device is operated is set according to described preset threshold value is specially:
The least unit that described memory device is read and write or duplicated is set according to described preset threshold value;
Described step of described composite store cell being operated simultaneously according to the described least unit that is provided with is specially:
According to the described least unit of reading and writing or duplicating that is provided with described combined page is read and write simultaneously or duplicated.
4, memory device method of operating according to claim 1 is characterized in that, the described step that the storage unit of preset threshold value in the memory device is bundled into a composite store cell is specially:
An exponential depth face of 2, piece or page or leaf in the memory device are bundled into a combinatorial surface, piece or page or leaf.
5, memory device method of operating according to claim 4 is characterized in that, the described step that the storage unit of preset threshold value in the memory device is bundled into a composite store cell is specially:
An exponential depth face of 2 in the memory device is bundled into a combinatorial surface;
The described step that the least unit that described memory device is operated is set according to described preset threshold value is specially:
Minimum read-write or replicator are set to 2 exponential depth page or leaf, and minimum unit of erase is set to 2 exponential depth piece.
6, memory device method of operating according to claim 5 is characterized in that, described described least unit according to setting is specially the step that described composite store cell is operated simultaneously:
Same page in exponential depth to 2 face is read and write or replicate run simultaneously, and the same block in the face of the exponential depth to 2 carries out erase operation simultaneously.
7, memory device method of operating according to claim 1 is characterized in that, described operation comprises read-write, duplicates or wipes.
8, a kind of controller is characterized in that, comprising:
The binding unit is used for a memory device preset threshold value storage unit is bundled into a composite store cell;
The unit is set, is used for the least unit that described memory device is operated being set according to the described preset threshold value that described binding unit uses;
Operating unit is used for according to the described described least unit that the unit setting is set described composite store cell being operated simultaneously.
9, controller according to claim 8 is characterized in that, the described unit that is provided with comprises:
The read-write unit is provided with the unit, is used for the minimum unit of read-write is set to a preset threshold value number of pages;
Erase unit is provided with the unit, is used for minimum unit of erase and is set to a preset threshold value piece number.
10, a kind of communication system is characterized in that, comprising:
Memory device comprises at least two storage unit;
Controller is used for a described memory device preset threshold value storage unit is bundled into a composite store cell; The least unit that described memory device is operated is set according to described preset threshold value; According to the described least unit that is provided with described composite store cell is operated simultaneously.
11, communication system according to claim 10 is characterized in that, described controller comprises:
The binding unit is used for a described memory device preset threshold value storage unit is bundled into a composite store cell;
The unit is set, is used for the least unit that described memory device is operated being set according to the described preset threshold value that described binding unit uses;
Operating unit is used for according to the described described least unit that the unit setting is set described composite store cell being operated simultaneously.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810182701 CN101446929A (en) | 2008-12-01 | 2008-12-01 | Operating method for storing equipment, controller and communication system |
| PCT/CN2009/075206 WO2010063229A1 (en) | 2008-12-01 | 2009-11-30 | Method for operating memory device, controller and communication system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810182701 CN101446929A (en) | 2008-12-01 | 2008-12-01 | Operating method for storing equipment, controller and communication system |
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| CN101446929A true CN101446929A (en) | 2009-06-03 |
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| CN 200810182701 Pending CN101446929A (en) | 2008-12-01 | 2008-12-01 | Operating method for storing equipment, controller and communication system |
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| WO (1) | WO2010063229A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010063229A1 (en) * | 2008-12-01 | 2010-06-10 | 成都市华为赛门铁克科技有限公司 | Method for operating memory device, controller and communication system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003233993A (en) * | 2002-02-08 | 2003-08-22 | Matsushita Electric Ind Co Ltd | Method for rewriting nonvolatile memory device |
| JP2007199905A (en) * | 2006-01-25 | 2007-08-09 | Toshiba Corp | Method for controlling semiconductor storage device |
| CN101446929A (en) * | 2008-12-01 | 2009-06-03 | 成都市华为赛门铁克科技有限公司 | Operating method for storing equipment, controller and communication system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010063229A1 (en) * | 2008-12-01 | 2010-06-10 | 成都市华为赛门铁克科技有限公司 | Method for operating memory device, controller and communication system |
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