CN101446754A - Photo-mask, method for preparing photo-mask and method for exposure - Google Patents
Photo-mask, method for preparing photo-mask and method for exposure Download PDFInfo
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- CN101446754A CN101446754A CNA2007101710879A CN200710171087A CN101446754A CN 101446754 A CN101446754 A CN 101446754A CN A2007101710879 A CNA2007101710879 A CN A2007101710879A CN 200710171087 A CN200710171087 A CN 200710171087A CN 101446754 A CN101446754 A CN 101446754A
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Abstract
The invention provides a photo-mask, comprising a substrate, at least a first mask pattern which is arranged on the same substrate and corresponding to an X-pole exposure light source, and at least a second mask pattern which is corresponding to a Y-pole exposure light source; wherein, the first mask patterns and the second mask patterns appear in pair. The invention also discloses a method for preparing photo-masks and a method for exposure. The photo-mask, the method for preparing the photo-mask and the method for exposure avoid the error during the exposure processed caused by conversion of photo-mask and standard photo-mask, and can improve the exposure precision.
Description
Technical field
The present invention relates to photomask, the method for making photomask and the method for exposure.
Background technology
Photoetching process is an important technology indispensable in the integrated circuit fabrication process.Described photoetching process generally includes following steps, earlier at photosensitive materials such as crystal column surface coating photoresistances, after the photosensitive material drying, by exposure machine the mask graph on the photomask is exposed to the sun on described photosensitive material with specific light source, subsequently, again with developer with developing photosensitive material, and utilize the figure develop out as shielding, carry out technologies such as etching, and finally finish the transfer of mask graph.
More and more littler along with size of devices in the integrated circuit fabrication process, also more and more higher for the requirement of photoetching process.At present, all be to reach the purpose that exposes the smaller szie figure generally by the exposure wavelength that dwindles exposure light source.Yet, this only by the mode of dwindling exposure wavelength, the problem of photoetching resolution deficiency can appear usually.In order to increase photoetching resolution, integrated circuit fabrication process of today has developed resolution enhance technology such as optical proximity correction and phase shift mask.Recently, technology-" double exposure technique " that another kind of raising resolution also occurred, described " double exposure technique " is that the circuitous pattern that needs expose is resolved into two parts, a part of circuitous pattern at first exposes, exposure figure moves on to vicinity then, more remaining a part of circuitous pattern is exposed.Adopt this technology can improve photoetching resolution.And the current double exposure technique that is based on bipolar illumination that in " double exposure technique ", uses.Described double exposure is earlier the layout figure to be resolved into the X utmost point and the Y utmost point two covers, and writes photomask formation mask graph, respectively mask graph is exposed again.For example number of patent application be can also find in 03128638.0 the Chinese patent application more about utilizing bipolar illumination to obtain to have method than the circuitous pattern of small-feature-size.
And, present technology is to adopt set rule (the X utmost point has the different rule of two covers with the Y utmost point), carry out different moving at every limit in the layout figure, correspond respectively to two of the X utmost point and the Y utmost point with formation and overlap the layout figures, again two cover layout figures are carried out writing in two photomasks after the optics correction.Double expose the component graphics that obtains reality thereby exposure back figure superpose then on wafer.Yet, because the layout figure corresponding to the X utmost point and the Y utmost point writes on two photomasks, thereby needs the convert light mask between double exposure, and calibration is made in the position of photomask, and such calibration tends to bring error to exposure process, has reduced exposure accuracy.
Summary of the invention
The invention provides a kind of photomask, the method for making photomask and the method for exposure, solve the not high problem of prior art exposure accuracy.
For addressing the above problem, the invention provides a kind of photomask, comprise substrate, be positioned at least one first mask graph and at least one second mask graph on the same substrate corresponding to Y utmost point exposure light source corresponding to X utmost point exposure light source, wherein, described first mask graph and second mask graph occur in pairs.
Described first mask graph is positioned at the first half of substrate, and described second mask graph is positioned at the Lower Half of substrate.
Described first mask graph is positioned at the left side of substrate, and described second mask graph is positioned at the right-hand part of substrate.
Described first mask graph and second mask graph are spaced on substrate.
The present invention also provides a kind of method of making photomask, comprises the following steps,
The layout figure is resolved into two cover layout figures corresponding to X utmost point exposure light source and Y utmost point exposure light source;
After the described decomposition two cover layout figure is carried out the optics correction, to obtain the first layout correction pattern and the second layout correction pattern respectively;
The selected first layout correction pattern and the second layout correction pattern write the zone on same substrate;
The described first layout correction pattern and the second layout correction pattern are transferred to the pairing zone that writes on the substrate, form first mask graph and second mask graph,
Wherein, described first mask graph and second mask graph occur in pairs.
The write zone of the selected first layout correction pattern on substrate is the first half of substrate, and the write zone of the selected second layout correction pattern on substrate is the Lower Half of substrate.
The write zone of the selected first layout correction pattern on substrate is the left side of substrate, and the write zone of the selected second layout correction pattern on substrate is the right-hand part of substrate.
The selected first layout correction pattern and the second layout correction pattern write the zone for being spaced on substrate.
The present invention also provides a kind of exposure method, comprises the following steps,
Photomask is provided, comprises substrate and be formed on the substrate corresponding to first mask graph of X utmost point exposure light source with corresponding to second mask graph of Y utmost point exposure light source;
According to the position of the mask graph on the photomask, respectively to exposing corresponding to first mask graph of X utmost point exposure light source and second mask graph of Y utmost point exposure light source on the photomask,
Wherein, described first mask graph and second mask graph occur in pairs.
Described first mask graph is positioned at the first half of substrate, and described second mask graph is positioned at the Lower Half of substrate.
Described first mask graph is positioned at the left side of substrate, and described second mask graph is positioned at the right-hand part of substrate.
Described first mask graph and second mask graph are spaced on substrate.
Describedly respectively first mask graph and second mask graph are exposed for earlier all first mask graphs or second mask graph on the photomask being exposed, again second mask graph or first mask graph are exposed.
Describedly respectively first mask graph and second mask graph are exposed for earlier first mask graph and second mask graph that belongs to a layout figure being exposed, first mask graph and second mask graph that the next one is belonged to a layout figure exposes again.
Compared with prior art, above-mentioned disclosed photomask, the method for making photomask and the method for exposure have the following advantages: the method for above-mentioned disclosed photomask, the method for making photomask and exposure is by in the photoetching process of using double exposure technique, to be produced on the same photomask through two cover layout figures of the X utmost point and the decomposition of the Y utmost point, again corresponding mask graph on the photomask is exposed respectively, thereby avoided convert light mask and alignment light mask to the error that exposure process brings, improved the precision of exposure.
Description of drawings
Fig. 1 is a kind of embodiment synoptic diagram of photomask of the present invention;
Fig. 2 is the another kind of embodiment synoptic diagram of photomask of the present invention;
Fig. 3 is a kind of embodiment synoptic diagram of the present invention's method of making photomask;
Fig. 4 is a kind of embodiment synoptic diagram of exposure method of the present invention;
Fig. 5 is the undecomposed preceding layout pictorial diagram of a kind of embodiment correspondence of photomask of the present invention.
Embodiment
The method of photomask disclosed in this invention, the method for making photomask and exposure is in the photoetching process of using double exposure technique, to be produced on the same photomask through two cover layout figures of the X utmost point and the decomposition of the Y utmost point, again corresponding mask graph on the photomask is exposed respectively, thereby avoided convert light mask and alignment light mask to the error that exposure process brings, improved the precision of exposure.
With reference to shown in Figure 1, a kind of embodiment of photomask of the present invention comprises:
The spacing of described mask graph, for example spacing of first mask graph 10 and first mask graph 11; The spacing of first mask graph 10 and second mask graph 20; The spacing of second mask graph 21 and second mask graph 20; The spacing of second mask graph 21 and second mask graph 11 is generally the width of cut-off rule on the photomask, and for example the spacing of mask graph described herein is 80um.Described substrate 1 is the light-permeable plate on the photomask, is generally transparent materials such as organic glass.And described first mask graph 10,11 and second mask graph 20,21 all are positioned at the light tight zone on the photomask, and the material in described light tight zone is generally chromium, and described chromium is positioned on the described light-permeable plate.
With reference to shown in Figure 2, the another kind of embodiment of photomask of the present invention comprises:
The spacing of described mask graph, for example spacing of first mask graph 10 and first mask graph 11; The spacing of first mask graph 10 and second mask graph 20; The spacing of second mask graph 21 and second mask graph 20; The spacing of second mask graph 21 and second mask graph 11 is generally the width of cut-off rule on the photomask, and for example the spacing of mask graph described herein is 80um.Described substrate 1 is the light-permeable plate on the photomask, is generally transparent materials such as organic glass.And described first mask graph 10,11 and second mask graph 20,21 all are positioned at the light tight zone on the photomask, and the material in described light tight zone is generally chromium, and described chromium is positioned on the described light-permeable plate.
With reference to shown in Figure 3, a kind of embodiment that the present invention makes the method for photomask comprises the following steps,
Step s1 resolves into two cover layout figures corresponding to X utmost point exposure light source and Y utmost point exposure light source with the layout figure;
Step s2 carries out the optics correction to the cover of two after described decomposition layout figure, to obtain the first layout correction pattern and the second layout correction pattern respectively;
Step s3, the selected first layout correction pattern and the second layout correction pattern write the zone on same substrate;
Step s4, the described first layout correction pattern and the second layout correction pattern are transferred to the pairing zone that writes on the substrate, form first mask graph and second mask graph, described first mask graph is corresponding to the first layout correction pattern, second mask graph is corresponding to the second layout correction pattern, wherein, described first mask graph and second mask graph occur in pairs.
The write zone of the selected first layout correction pattern on substrate is the first half of substrate, and the write zone of the selected second layout correction pattern on substrate is the Lower Half of substrate.
The write zone of the selected first layout correction pattern on substrate is the left side of substrate, and the write zone of the selected second layout correction pattern on substrate is the right-hand part of substrate.
The selected first layout correction pattern and the second layout correction pattern write the zone for being spaced on substrate.
The spacing of described mask graph is generally the width of cut-off rule on the photomask, and for example the spacing of mask graph described herein is 80um.Described substrate is the light-permeable plate on the photomask, is generally transparent materials such as organic glass.And described first mask graph and second mask graph all are positioned at the light tight zone on the photomask, and the material in described light tight zone is generally chromium, and described chromium is positioned on the described light-permeable plate.
With reference to shown in Figure 4, a kind of embodiment of exposure method of the present invention comprises the following steps,
Step s10 provides photomask, comprises substrate and is formed on the substrate corresponding to first mask graph of X utmost point exposure light source with corresponding to second mask graph of Y utmost point exposure light source;
Step s20, according to the position of first mask graph on the photomask and second mask graph, mobile photomask exposes to first mask graph and second mask graph respectively,
Wherein, described first mask graph and second mask graph occur in pairs.
Described first mask graph is positioned at the first half of substrate, and described second mask graph is positioned at the Lower Half of substrate.
Described first mask graph is positioned at the left side of substrate, and described second mask graph is positioned at the right-hand part of substrate.
Described first mask graph and second mask graph are spaced on substrate.
The spacing of described mask graph is generally the width of cut-off rule on the photomask, and for example the spacing of mask graph described herein is 80um.Described substrate is the light-permeable plate on the photomask, is generally transparent materials such as organic glass.And described first mask graph and second mask graph all are positioned at the light tight zone on the photomask, and the material in described light tight zone is generally chromium, and described chromium is positioned on the described light-permeable plate.
Described respectively first mask graph and second mask graph exposures be, earlier all first mask graphs or second mask graph on the photomask exposed, and second mask graph or first mask graph exposed again.
Described first mask graph and second mask graph are exposed is, earlier first mask graph and second mask graph that belongs to a layout figure exposed, first mask graph and second mask graph that the next one is belonged to a layout figure exposes again.
Be example from making photomask to described exposure process with one below, be elaborated, so that the method for above-mentioned photomask, the method for making photomask and exposure is clearer.
Continue when needs are used double exposure technique in photoetching process, at first just need the layout figure that will carry out photoetching process to be decomposed with reference to shown in Figure 3.For example, with reference to shown in Figure 5, described layout figure is one group of broken line figure parallel to each other, described broken line figure comprise along the x direction corresponding with X utmost point exposure light source first line segment (indicating among Fig. 1) and along with second line segment (indicating among Fig. 1) of the corresponding y direction of Y utmost point exposure light source, first line segment and second line segment intersect vertically.So described layout figure just can be decomposed into two cover layout figures, and a cover layout figure comprises first line segment, and another set of layout figure comprises second line segment.
As everyone knows, when transferring to mask graph on the wafer, be easy to produce optical approach effect (OPE, optical proximity effect), for example right-angled corner rounding (right-angled cornerrounded), the terminal deflation of straight line (line end shortened) and straight line live width increase/reduction (linewidth increase/decrease) etc. all are that the common mask graph that optical approach effect caused is transferred to the defective on the wafer.Thereby, before the layout figure being write photomask formation mask graph, earlier the layout figure is revised with regard to needs.In this example, described layout figure has been broken down into two cover layout figures corresponding to X utmost point exposure light source and Y utmost point exposure light source, thereby just need overlap the layout figures to described two and revise respectively and obtain the first layout correction pattern and the second layout correction pattern.And the purpose of revising is exactly the influence that the compensate for optical approach effect brings, generally to the modification method of linear figure rule-based optical approach effect revised law is arranged, based on the optical approach effect revised law of model, well known to a person skilled in the art method based on the optical approach effect revised law of pixel etc., the method for just no longer optics being closed on correction has been described in detail here.
After obtaining the first layout correction pattern and the second layout correction pattern, owing to the first layout correction pattern and the second layout correction pattern need be write same photomask, thereby before this, the zone that just needs the selected respectively earlier first layout correction pattern and the second layout correction pattern to write.As previously mentioned, the zone that the first layout correction pattern and the second layout correction pattern write lays respectively at the both sides of substrate, with reference to shown in Figure 1, the zone that the first layout correction pattern and the second layout correction pattern write can lay respectively at the first half and the latter half of substrate; With reference to shown in Figure 2, the zone that the first layout correction pattern and the second layout correction pattern write also can lay respectively at the left-half and the right half part of substrate.Certainly, the first layout correction pattern and the second layout correction pattern writes the zone and also can be spaced.
After having selected the zone that the first layout correction pattern and the second layout correction pattern write, just can the first layout correction pattern and the second layout correction pattern be write substrate, form first mask graph and second mask graph by electron beam writing station or laser beam writing station.The material of described first mask graph and second mask graph is light tight material, is generally chromium.So far, the making of photomask has just been finished.
And after photo mask production is finished, photomask sent into carry out exposure manufacture process in the exposure system.After photomask is admitted to exposure system, need to calibrate for the position of photomask earlier, so that photomask can accurately be positioned the position of setting under the exposure light source.After finishing calibration, just can use X utmost point exposure light source or Y utmost point exposure light source that corresponding mask graph has been exposed respectively.Continue with reference to shown in Figure 4, described exposure system is according to the position of first mask graph on the photomask and second mask graph, and mobile photomask exposes to first mask graph and second mask graph respectively
The exposure process here can have two kinds of selections, a kind of is to use a kind of single light source that all corresponding mask figures on the photomask are exposed earlier, for example use X aurora source that first all on the photomask mask graphs is exposed, and then change another kind of single light source all corresponding mask figures on the photomask are exposed, for example use Y aurora source that second all on the photomask mask graphs is exposed; Another kind is to expose respectively according to the layout figure before each first mask graph and the pairing decomposition of second mask graph, promptly use X aurora source and Y aurora source that first mask graph and second mask graph that belongs to a layout figure exposed in turn, after finishing, again first mask graph and second mask graph that belongs to another layout figure exposed, until the exposure of finishing all mask graphs on the photomask.
Following example is in order to make above-mentioned description to exposure process clearer, is not to be used for limiting.For example, continue with reference to shown in Figure 1, first mask graph 10 and second mask graph 20 are mask graphs that a layout figure writes after decomposing, revising; And first mask graph 11 and second mask graph 21 are mask graphs that another layout figure writes after decomposing, revising.So to the exposure process of described mask graph, both can be to use X utmost point exposure light source earlier to all first mask graphs on the substrate 1, promptly first mask graph 10 and first mask graph 11 expose, re-use Y utmost point exposure light source to all second mask graphs on the substrate 1, promptly second mask graph 20 and second mask graph 21 advance the shape exposure; Also can be after earlier using X utmost point exposure light source and Y utmost point exposure light source to expose in turn to first mask graph 10 that belongs to a layout figure on the substrate 1 and the secondth mask graph 20, first mask graph 11 and second mask graph 21 that substrate 1 is belonged to another layout figure uses X utmost point exposure light source and Y utmost point exposure light source to expose in turn again.
In two kinds of above-mentioned exposure process, because pairing mask graph of X utmost point exposure light source and the pairing mask graph of Y utmost point exposure light source all are formed on the same photomask, thereby between exposure of the X utmost point and the exposure of the Y utmost point, do not need to calibrate for the position of photomask again, only need be after finishing wherein a kind of exposure, another kind of exposure light source corresponding mask figure moved under this exposure light source get final product.So just avoid introducing the necessary recalibration process of new photomask, not only improved the efficient of exposure, also avoided recalibrating the error of bringing to exposure.And because required mask graph all is made on same the photomask, double exposure relatively before needs two photomasks, has also reduced cost.
In sum, the method of above-mentioned disclosed photomask, the method for making photomask and exposure is by in the photoetching process of using double exposure technique, to be produced on the same photomask through two cover layout figures of the X utmost point and the decomposition of the Y utmost point, again corresponding mask graph on the photomask is exposed respectively, thereby avoided convert light mask and alignment light mask to the error that exposure process brings, improved the precision of exposure.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (14)
1. photomask, it is characterized in that, comprise: substrate, be positioned at least one first mask graph and at least one second mask graph on the same substrate corresponding to Y utmost point exposure light source corresponding to X utmost point exposure light source, wherein, described first mask graph and second mask graph occur in pairs.
2. photomask as claimed in claim 1 is characterized in that described first mask graph is positioned at the first half of substrate, and described second mask graph is positioned at the Lower Half of substrate.
3. photomask as claimed in claim 1 is characterized in that described first mask graph is positioned at the left side of substrate, and described second mask graph is positioned at the right-hand part of substrate.
4. photomask as claimed in claim 1 is characterized in that, described first mask graph and second mask graph are spaced on substrate.
5. a method of making photomask is characterized in that, comprising:
The layout figure is resolved into two cover layout figures corresponding to X utmost point exposure light source and Y utmost point exposure light source;
After the described decomposition two cover layout figure is carried out the optics correction, to obtain the first layout correction pattern and the second layout correction pattern respectively;
The selected first layout correction pattern and the second layout correction pattern write the zone on same substrate;
The described first layout correction pattern and the second layout correction pattern are transferred to the pairing zone that writes on the substrate, form first mask graph and second mask graph,
Wherein, described first mask graph and second mask graph occur in pairs.
6. the method for making photomask as claimed in claim 5 is characterized in that, the write zone of the selected first layout correction pattern on substrate is the first half of substrate, and the write zone of the selected second layout correction pattern on substrate is the Lower Half of substrate.
7. the method for making photomask as claimed in claim 5 is characterized in that, the write zone of the selected first layout correction pattern on substrate is the left side of substrate, and the write zone of the selected second layout correction pattern on substrate is the right-hand part of substrate.
8. the method for making photomask as claimed in claim 5 is characterized in that, the selected first layout correction pattern and the second layout correction pattern write the zone for being spaced on substrate.
9. the method for an exposure is characterized in that, comprising:
Photomask is provided, comprises substrate and be positioned on the substrate corresponding to first mask graph of X utmost point exposure light source with corresponding to second mask graph of Y utmost point exposure light source;
According to the position of the mask graph on the photomask, respectively to exposing corresponding to first mask graph of X utmost point exposure light source and second mask graph of Y utmost point exposure light source on the photomask;
Wherein, described first mask graph and second mask graph occur in pairs.
10. the method for exposure as claimed in claim 9, it is characterized in that, describedly respectively first mask graph and second mask graph are exposed for earlier all first mask graphs or second mask graph on the photomask being exposed, again second mask graph or first mask graph are exposed.
11. the method for exposure as claimed in claim 9, it is characterized in that, describedly respectively first mask graph and second mask graph are exposed for earlier first mask graph and second mask graph that belongs to a layout figure being exposed, first mask graph and second mask graph that the next one is belonged to a layout figure exposes again.
12. the method for exposure as claimed in claim 9 is characterized in that, described first mask graph is positioned at the first half of substrate, and described second mask graph is positioned at the Lower Half of substrate.
13. the method for exposure as claimed in claim 9 is characterized in that, described first mask graph is positioned at the left side of substrate, and described second mask graph is positioned at the right-hand part of substrate.
14. the method for exposure as claimed in claim 9 is characterized in that, described first mask graph and second mask graph are spaced on substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101710879A CN101446754A (en) | 2007-11-27 | 2007-11-27 | Photo-mask, method for preparing photo-mask and method for exposure |
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| CNA2007101710879A CN101446754A (en) | 2007-11-27 | 2007-11-27 | Photo-mask, method for preparing photo-mask and method for exposure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799685A (en) * | 2018-11-30 | 2019-05-24 | 无锡市好达电子有限公司 | A kind of preceding road wafer photolithography method of SAW filter |
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- 2007-11-27 CN CNA2007101710879A patent/CN101446754A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799685A (en) * | 2018-11-30 | 2019-05-24 | 无锡市好达电子有限公司 | A kind of preceding road wafer photolithography method of SAW filter |
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