CN101446563A - Method for identifying and measuring doping elements in semiconductor material - Google Patents
Method for identifying and measuring doping elements in semiconductor material Download PDFInfo
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- CN101446563A CN101446563A CNA200710178098XA CN200710178098A CN101446563A CN 101446563 A CN101446563 A CN 101446563A CN A200710178098X A CNA200710178098X A CN A200710178098XA CN 200710178098 A CN200710178098 A CN 200710178098A CN 101446563 A CN101446563 A CN 101446563A
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Abstract
A method for identifying and measuring doping elements in a semiconductor material comprises the following steps: (1) emitting X-rays to the surface of a silicon-crystal sample by a X-ray diffraction device, wherein, metallic elements including dopant elements on the surface of the silicon-crystal sample which contains a dopant generates a diffraction spectrum under the bombardment of the X-rays; (2) receiving the diffraction spectrum by a detector; and (3) determining the types of the elements by a spectral line position of a characteristic spectrum. The method has the advantages that special sampling is unnecessary for czochralski monocrystalline silicon materials containing the doping elements; and the czochralski monocrystalline silicon materials do not contact, which does not cause contamination to the czochralski monocrystalline silicon materials with nearly no damage, a detection result can be displayed in only 5-180 seconds, and the method is especially suitable for field identification. Meanwhile, the method can help measure the content of a dopant in a silicon crystal material.
Description
Technical field
Mix the detection and the discrimination method of the adulterant in the monocrystalline silicon when the present invention relates to by vertical pulling method (Czochralski method) cultivation monocrystalline silicon.
Background technology
Monocrystalline silicon is commonly used for the original material of working integrated circuit.The method of typical manufacture order crystal silicon is the Czochralski method, and it puts into earlier a little monocrystalline kind in molten state silicon.Slowly mention then, will constantly rotate crystal usually when mentioning, like this, monocrystalline just grows into bigger silicon wafer or crystal block.
When producing high-quality silicon wafer, some conditions that influence crystal growth are careful and are controlled, as temperature, pressure, impurity and pull rate.In addition, some specific impurity may be added in the molten state silicon consciously as the characteristic electron of adulterant in order to change product crystal.
The adulterant that silicon wafer is commonly used is III, V group element; Mix III family elements, such as boron (B) in the silicon wafer and can obtain room conductive-type semiconductor (P-type semiconductor), mix V group element such as phosphorus (P), arsenic (As), antimony (Sb) can electron gain conductive-type semiconductor (N-type semiconductor).Therefore determine doped chemical by the conductivity model that detects the silicon wafer material.
Well-known in semicon industry: if the conductivity model of a silicon wafer material sample is the P type, no matter the size of resistivity can judge that all the adulterant in this sample is boron (B); If the conductivity model of a silicon wafer material sample be N type and resistivity greater than 0.1 Ω cm, generally the adulterant in this sample is phosphorus (P).If the conductivity model of a silicon wafer material sample be N type and resistivity less than 0.1 Ω cm, then can not come doped chemical in the judgement sample according to conductivity model and resistivity.
Mix backing material in order to manufacture resistivity less than the heavy silicon wafer of N type of 0.1 Ω cm, phosphorus (P), arsenic (As), three kinds of N types of antimony (Sb) adulterant are incorporated in the silicon wafer to make the more excellent semiconductor material of electric conductivity usually.
The atomic radius of Sb is than Si (5.431
) big, mismatch ratio is 1.15, this means that atom as Sb can make lattice that bigger distortion takes place when entering in the lattice of Si, and the segregation coefficient of Sb is little, and it is very low to be difficult to make the resistivity of monocrystalline to be accomplished, and common resistivity is at 0.006～0.10 Ω cm.
The atomic radius of As and the radius of Si are approaching, saturation solubility in silicon wafer is than Sb saturated solubleness height in silicon wafer, segregation coefficient is also bigger, therefore mixing the resistivity that the silicon wafer of As obtains can be than the low nearly order of magnitude of the silicon wafer resistivity of mixing antimony, and resistivity is at 0.0015～0.10 Ω cm usually.
The atomic radius of P is littler than the radius of Si, saturation solubility in silicon wafer surpasses As saturated solubleness in silicon wafer, segregation coefficient is big, and it is also lower than the silicon wafer resistivity of mixing As therefore to mix the resistivity that the silicon wafer of P obtains, and common resistivity is at 0.0008～0.10 Ω cm.
By as can be seen above-mentioned, if the conductivity model of a silicon wafer material sample be N type and resistivity less than 0.1 Ω cm, then can not come doped chemical in the judgement sample according to conductivity model and resistivity.
Summary of the invention
The purpose of this invention is to provide a kind of method of differentiating and measuring doped chemical in the semiconductor material, this inventive method is different from said method, said method is a kind of method of indirect measurement, be to determine conduction type by detect the direction that charge carrier moves in the silicon wafer material in electric field, and then definite dopant type, this method is not contact the pulling of crystals silicon materials, can not cause contamination to the pulling of crystals silicon materials, only needed 5-180 seconds can show testing result, be particularly suitable for on-the-spot the discriminating, and can measure the content of adulterant in the silicon wafer material.
To achieve the above object of the invention, the present invention by the following technical solutions: include detection, the discrimination method of adulterant in this pulling of crystals silicon materials, it is characterized in that,
(1), by a cover X-ray diffraction device, to silicon wafer sample surfaces emission X-ray, the silicon wafer sample surfaces that contains adulterant comprises dopant element at interior metallic element generation diffraction spectrum under the bombardment of X-ray;
(2), receive diffraction spectrum by detecting device;
(3), come the kind of decision element by the characteristic spectrum position of spectral line.
Core of the present invention is by a cover X-ray diffraction device, to silicon wafer sample surfaces emission X-ray, the silicon wafer sample surfaces that contains adulterant comprises dopant element at interior metallic element generation diffraction spectrum under the bombardment of X-ray, the optic spectrum line of dissimilar metals element is different, and promptly each element all has its characteristic spectral line; Receive diffraction spectrum, the kind of coming decision element by the characteristic spectrum position of spectral line by a high precision, high sensitivity, high-resolution detecting device; Can calculate the size of this constituent content by the peak value of characteristic spectrum spectral line.Be applicable to that N type and resistivity are less than the detection, the discriminating that contain adulterant in the 0.1 Ω cm silicon wafer material.
Include detection, the discrimination method of adulterant in the described this pulling of crystals silicon materials, be applicable to that N type and resistivity are less than the detection, the discriminating that contain adulterant in the 0.1 Ω cm silicon wafer material; Be applicable to the detection, the discriminating that contain adulterant in N type and resistivity 0.0008～0.02 Ω cm silicon wafer material.
In this method, vertical pulling silicon wafer material comprises silicon chip (section, abrasive disc, etched sheet, polished silicon wafer) the leftover pieces (monocrystalline head, afterbody, the monocrystalline part that dislocation is arranged and the silicon material that contains above-mentioned adulterant that extracts from the vertical pulling stove), process of primary monocrystal rod, primary monocrystalline processing.
Advantage of the present invention is: do not need special sample preparation during the doped chemical pulling of crystals silicon materials that contain, the pulling of crystals silicon materials are discontiguous, can not cause contamination to the pulling of crystals silicon materials, almost be undamaged, only needed 5-180 seconds can show testing result, be particularly suitable for on-the-spot discriminating, simultaneously, method provided by the invention also can be measured the content of adulterant in the silicon wafer material.
Description of drawings
Fig. 1: the structured flowchart of measurement mechanism of the present invention
Fig. 2: Si-PIN silicon detector structural representation
Fig. 3: Si-PIN silicon detector principle schematic
Fig. 4: mix arsenic silicon wafer material X fluorescent line
Fig. 5: mix arsenic silicon wafer material X fluorescent line K α peak
Fig. 6: mix arsenic silicon wafer material X fluorescent line K β peak
The present invention uses said apparatus, and this device (containing silicon detector) market is on sale, and the trade mark is INNOV-X Alpha 4000, and it is comprised of five parts: 1. direct ratio X-ray light pipe; 2. high accuracy, high sensitivity, high-resolution detector (Detector); 3. microprocessor system; 4. the safe interlocking mechanism with Infrared Detectors reaches 5. power supply.
Among Fig. 4, Fig. 5, Fig. 6, abscissa is energy, and ordinate is counting/second.
Operation principle: direct ratio X-ray light pipe is 1. to silicon wafer sample S emission X-ray to be measured behind the plugged; Include the silicon wafer sample S of doped chemical D under X-ray bombardment, will reflect the difraction spectrum that comprises doped chemical D characteristic spectrum; 2. difraction spectrum injects high accuracy, high sensitivity, high-resolution detector; 2. detector converts the spectrum that receives to optic spectrum line signal I, with the microprocessor system of display screen and data storage 3. signal I sends into, the signal I feature that microprocessor receives compares with feature in data storage, by display screen display measurement result.
X-ray is activated and causes the leakage of X-ray when preventing from not having specimen to block X-ray window, near window, designed safe interlocking mechanism 4., safe interlocking mechanism is 4. by infrared when perceiving specimen S and having blocked X-ray window, just allow power supply 5. 1. to connect with X-ray light pipe, then just have X-ray to send; When simultaneously if 4. safe interlocking mechanism perceives specimen S and can not effectively block X-ray window, cut off immediately the emission that X-ray light pipe power supply 1. stops X-ray, thereby farthest reduced the leakage of X-ray, improved the security of the inventive method.
The inventive method does not have special requirement to the silicon wafer semi-conducting material shape of being differentiated, test sample surface is not needed to process; X-RAY window and tested sample surface have several millimeters distances or sample hour, also can obtain desirable test result.
Embodiment
1. X-ray light pipe: target produces the X-ray under the high direct voltage electro ultrafiltration, for example adopt the Ag target, maximum voltage 40KV.
2. detector is the device of particle detection and radiation, can differentiate the X ray particle of incident and the energy of radiation, the choosing/employing of this device be the silicon detector of Si-PIN structure.Si-PIN detector core cell adopts electricity refrigeration cooling system to replace liquid nitrogen, has simplified the structure of detector.
The structural representation of detector: PIN is one of many kinds of structures of semiconductor devices, be that (acceptor impurity is taken as the leading factor by one deck P-type semiconductor, the hole of positively charged [Positive] is a majority carrier) and one deck N-type semiconductor (donor impurity is taken as the leading factor, and the electronics of electronegative [Negative] is a majority carrier) and their in the middle of one deck I (the Intrinsic[intrinsic semiconductor] structure formed of layer.
Detector operation principle: under the effect of reverse voltage (internal electric field or impressed voltage), the free carrier of the near interface in the p type island region of PN junction and N type district (electronics and hole) can be pulled to both positive and negative polarity, will not have or almost do not have free carrier in the zone of near interface, this phenomenon is called and exhausts---and free carrier has exhausted.This does not have the zone of free carrier to be called depletion region or space charge region.If reverse voltage increases, depletion region can all be called part depletion to p type island region and two sides, N type district expansion (mainly to low-doped district's expansion) before the back side contact that reaches the PN device.If impressed voltage further increases, depletion region can arrive the back of the body contact of device, and this moment, depletion region can not further expand along with the increase of voltage again, was called entirely to exhaust, and made device just reach the voltage that exhausts entirely and was called total depletion voltage or exhausts voltage.When impressed voltage further increases (surpass exhaust voltage be called superpotential), although depletion layer can not expanded again, the electric field intensity in the depletion layer increases, Electric Field Distribution improve (trending towards more even).
The sensitive volume of silicon detector is exactly above-mentioned depletion region, and radiation (ray) off-energy in depletion region produces electron hole pair, and they are collected under the effect of depletion region internal electric field and produce electric signal, thereby can detect radiation and energy thereof.The quantitative analysis results that obtains, the state that silicon detector must operate at superpotential, exhausts entirely, so that the sensitive volume of detector can not change with the variation of impressed voltage, the detector sensitive volume also has enough strong and enough uniform electric field distribution to collect fully, in time the charge carrier that radiation produces simultaneously.
Each element all has the X ray of its feature, the energy that is its X ray is certain, can be according to its energy, go to seek the existing of corresponding element and (see the appendix (analysing in the characteristic X-ray energy meter of each element of usefulness K, L heat input table that can be measured for XRF side) of instructions.Wherein,
Element silicon (atomic number 12, Si), doped chemical phosphorus (atomic number 15, P), doped chemical arsenic (atomic number 33, As), doped chemical antimony (atomic number 51, characteristic X-ray energy Sb) is listed in table one:
| The atom sequence number | Symbol | Element | Kα | Kβ | Lα | Lβ | Lγ | Ll |
| 14 | Si | Silicon | 1.74 | 1.838 | ||||
| 15 | P | Phosphorus | 2.02 | 2.14 | ||||
| 33 | As | Arsenic | 10.532 | 11.729 | ||||
| 51 | Sb | Antimony | 26.274 | 29.851 | 3.605 | 3.843 | 4.35 | 3.188 |
Table one: silicon, phosphorus, arsenic and antimony characteristic X-ray energy (Kev) table
K α, K β, L α, L β, L γ are represented different characteristic X-rays respectively.Exist if survey the characteristic energy peak of certain element, the element of Xian Shiing just is present in the sample so.Method commonly used is to adopt KLM peak-seeking method (according to the peak value that the spectral line counting occurs, looking for corresponding element successively singly), and promptly an element of an element checks (replacing searching of a peak, peak).For an element, if its K α line exists, then K β line also exists, if L α exists, then L β, L γ also generally exist; That is to say that K β or L β, L γ line can be used as the checking peak that element exists, with the K linear system of an element, that the L linear system is searched the element certainty factor is higher, has the existence at the peak of two features just can judge this element existence.Tested vertical pulling silicon wafer material only contain phosphorus (atomic number 15, P), arsenic (atomic number 33, As), (atomic number 51, Sb) one of three kinds of elements, spectral line peak are can be not overlapping to antimony.
Embodiment
Embodiment 1: mix square antimony (Sb) the silicon wafer material sample of mixing of the thick 1mm of the antimony material wide 35mm X of one block length 35mm X, conductivity model is the N type, and four point probe test resistance rate is 0.018 Ω cm.
Technological parameter a: plane the X-RAY window being aimed at tested sample (S), window and sample (S) gap is less than 3mm, 3. setting the tests microprocessor time at display screen on is 30s, start power supply 5. after, 1. X-ray light pipe shines the X-ray that sends on the sample (S); Transition is taken place by X ray bombardment back in the outer-shell electron of the doped chemical that comprises in the sample (S) (D, antimony), launches feature X-ray spectrum simultaneously, and corresponding energy is K α 26.274Kev, K β 29.851Kev; 2. the Si-PIN detector receives this energy pulses counting and form corresponding crest on the energy spectral line in the test duration, the area of crest is directly proportional with the concentration of this element in sample, 3. goes up the indicating characteristic element information by microprocessor calculating at display screen to be:
| Compound Name (composition title) | Conc. content (%) | Compound Name (composition title) | Conc. content (%) |
| Si | 99.76 | Sb | 0.02 |
Result and sample include doped chemical antimony (Sb) and content coincide.
Embodiment 2: mix square arsenic (As) the silicon wafer material sample of mixing of a 35mm X of arsenic material 35mm X 1mm, conductivity model is the N type, and four point probe test resistance rate is 0.004 Ω cm.Equally detect with embodiment 1,
Obtain
Mix arsenic silicon wafer material X fluorescent line (Fig. 4);
Mix arsenic silicon wafer material X fluorescent line K α peak (Fig. 5);
Mix arsenic silicon wafer material X fluorescent line K β peak (Fig. 6);
On the X fluorescent line of mixing arsenic silicon wafer material, the K α of arsenic element and K β are significantly bimodal in formation, the energy that transforms is a spectral line: to mix arsenic silicon wafer material X fluorescent line K α peak be 10.57Kev and mix arsenic silicon wafer material X fluorescent line K β peak 11.72Kev, fit like a glove with the X ray energy (Kev) of arsenic in the table one, the concentration of arsenic element in sample is:
| Compound Name (composition title) | Conc. content (%) | Compound Name (composition title) | Conc. content (%) |
| Si | 99.91 | As | 0.09 |
Embodiment 3: mix square phosphorus (P) the silicon wafer material sample of mixing of a 35mm X of phosphate material 35mm X 1mm, conductivity model is the N type, and four point probe test resistance rate is 0.0015 Ω cm, detects with embodiment 1 one quadrat methods, and the concentration of arsenic element in sample is:
| Compound Name (composition title) | Conc. content (%) | Compound Name (composition title) | Conc. content (%) |
| Si | 99.73 | P | 0.11 |
By above three embodiment, illustrate to make things convenient for effectively to identify the doped chemical in the silicon wafer semiconductor material in (zone that sample is only required a 35mm X 35mm), quick (tens seconds) with the inventive method.
Appendix
Atom sequence number symbol element K α K β L α L β L γ Ll
12 Mg magnesium 1.25 1.30
13 Al aluminium 1.49 1.55
14 Si silicon 1.74 1.838
15 P phosphorus 2.02 2.14
16 S sulphur 2.31 2.468
17 Cl chlorine 2.62 2.82
18 Ar argons 2.96 3.19
19 K potassium 3.31 3.59
20 Ca calcium 3.69 4.01
21 Se scandiums 4.09 4.46
22 Ti titaniums 4.51 4.93
23 V vanadium 4.95 5.43
24 Cr chromium 5.41 5.95
25 Mn manganese 5.895 6.49
26 Fe iron 6.40 7.06
27 Co cobalts 6.925 7.65
28 Ni nickel 7.47 8.265
29 Cu copper 8.04 8.907
30 Zn zinc 8.63 9.572
31 Ga galliums 9.24 10.263
32 Ge germanium 9.876 10.984
33 As arsenic 10.532 11.729
34 Se selenium 11.21 12.501 1.38 1.42
35 Br bromines 11.91 13.296 1.48 1.53
36 Kr kryptons 12.63 14.12 1.59 1.64
37 Rb rubidiums 13.375 14.971 1.69 1.75
38 Sr strontiums 14.142 15.849 1.81 1.87
39 Y yttriums 14.933 16.754 1.92 2.00
40 Zr zirconiums 15.746 17.687 2.04 2.124 2.30 1.792
41 Nb niobiums 16.6584 18.647 2.17 2.257 2.46 1.902
42 Mo molybdenums 17.443 19.633 2.29 2.395 2.62 2.015
43 Tc technetiums 18.327 20.647 2.42 2.538 2.79 2.122
44 Ru rutheniums 19.235 21.687 2.56 2.683 2.96 2.252
45 Rh rhodiums 20.167 22.759 2.70 2.834 3.14 2.376
46 Pd palladiums 21.123 23.859 2.84 2.99 3.33 2.503
47 Ag silver 22.10 24.987 2.98 3.151 3.52 2.633
48 Cd cadmiums 23.109 26.143 3.13 3.316 3.72 2.767
49 Tn indiums 24.139 27.382 3.29 3.487 3.92 2.904
50 Sn tin 25.193 28.601 3.44 3.662 4.13 3.044
51 Sb antimony 26.274 29.851 3.605 3.843 4.35 3.188
52 Te hoof 27.38 31.128 3.77 4.029 4.57 3.335
53 I iodine 28.512 32.437 3.94 4.22 4.80 3.484
54 Xe xenons 29.669 33.777 4.11 4.422 5.04 3.636
55 Cs caesiums 30.854 35.149 4.286 4.62 5.28 3.794
56 Ba barium 32.065 36.553 4.47 4.828 5.53 3.953
57 La lanthanums 33.30 37.986 4.65 5.043 5.79 4.124
58 Ce ceriums 34.569 39.453 4.84 5.262 6.05 4.287
59 Pr protactiniums 35.864 40.953 5.034 5.489 6.32 4.452
60 Nd neodymiums 37.185 42.484 5.23 5.722 6.60 4.632
61 Pm hard iron 38.535 44.049 5.431 5.956 6.89 4.816
62 Sm samariums 39.914 45.649 5.636 6.206 7.18 4.994
63 Eu europiums 41.323 47.283 5.846 6.456 7.48 5.176
64 Gd gadoliniums 42.761 48.949 6.059 6.714 7.79 5.361
65 Tb terbiums 6.275 6.979 8.10 5.546
66 Dy dysprosiums 6.495 7.249 8.42 5.742
67 Ho holmiums 6.72 7.528 8.75 5.942
68 Er baits 6.948 7.81 9.09 6.152
69 Tm thuliums 7.18 8.103 9.42 6.341
70 Yb ytterbiums 7.41 8.401 9.78 6.544
71 Lu gold-platings 7.65 8.708 10.1 6.752
72 Hf hafniums 7.898 9.021 10.5 6.958
73 Ta tantalums 8.145 9.341 10.9 7.172
74 W tungsten 8.396 9.67 11.3 7.386
75 Re rheniums 8.651 10.008 11.7 7.602
76 Os osmiums 8.91 10.354 12.1 7.821
77 Ir iridium 9.17 10.706 12.5 8.040
78 Pt platinum 9.441 11.069 12.9 8.267
79 Au gold 9.711 11.439 13.4 8.493
80 Hg mercury 9.987 11.823 13.8 8.720
81 Tl thalliums 10.266 12.21 14.3 8.952
82 Pb plumbous 10.549 12.61 14.8 9.183
83 Bi bismuths 10.84 13.021 15.2 9.419
84 Po poloniums 11.13 13.441 15.7 9.662
85 At astatines 11.42 13.87 16.2
86 Rn radons 11.72 14.316 16.8
87 Fr franciums 12.03 14.77 17.3
88 Ra radium 12.34 15.233 17.8 10.620
89 Ac actiniums 12.65 15.712 18.4
90 Th thoriums 12.97 16.20 19.0 11.117
91 Pa protactiniums 13.29 16.70 19.6 11.364
92 U uranium 13.61 17.218 20.2 11.616
Claims (7)
1, include detection, the discrimination method of adulterant in a kind of pulling of crystals silicon materials, it is characterized in that,
(1), by a cover X-ray diffraction device, to silicon wafer sample surfaces emission X-ray, the silicon wafer sample surfaces that contains adulterant comprises dopant element at interior metallic element generation diffraction spectrum under the bombardment of X-ray;
(2), receive diffraction spectrum by detecting device;
(3), come the kind of decision element by the characteristic spectrum position of spectral line.
2, include detection, the discrimination method of adulterant in a kind of pulling of crystals silicon materials according to claim 1, it is characterized in that, calculate the size of this constituent content by the peak value of characteristic spectrum spectral line.
3, include detection, the discrimination method of adulterant in a kind of pulling of crystals silicon materials according to claim 1 and 2, it is characterized in that, be applicable to that N type and resistivity are less than the detection, the discriminating that contain adulterant in the 0.1 Ω cm silicon wafer material.
4, include detection, the discrimination method of adulterant in a kind of pulling of crystals silicon materials according to claim 1 and 2, it is characterized in that, be applicable to the detection, the discriminating that contain adulterant in N type and resistivity 0.0008～0.02 Ω cm silicon wafer material.
5, include detection, the discrimination method of adulterant in a kind of pulling of crystals silicon materials according to claim 1 and 2, it is characterized in that, be applicable to N type silicon wafer material, comprise that phosphorus (P), arsenic (As) and antimony (Sb) makees adulterant.
6, include detection, the discrimination method of adulterant in a kind of pulling of crystals silicon materials according to claim 1 and 2, it is characterized in that vertical pulling silicon wafer material comprises silicon chip (section, abrasive disc, etched sheet, polished silicon wafer) the leftover pieces (monocrystalline head, afterbody, the monocrystalline part that dislocation is arranged and the silicon material that contains above-mentioned adulterant that extracts from the vertical pulling stove), process of primary monocrystal rod, primary monocrystalline processing.
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| CNA200710178098XA CN101446563A (en) | 2007-11-26 | 2007-11-26 | Method for identifying and measuring doping elements in semiconductor material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103842806A (en) * | 2011-07-27 | 2014-06-04 | 原子能和代替能源委员会 | Determining the dopant content of a compensated silicon sample |
| CN108027331A (en) * | 2015-07-03 | 2018-05-11 | 株式会社岛津制作所 | Fluorescent x-ray analyzer and the spectrum display methods wherein used |
| CN111912811A (en) * | 2020-08-05 | 2020-11-10 | 西安奕斯伟硅片技术有限公司 | Method and device for measuring element content in monocrystalline silicon |
-
2007
- 2007-11-26 CN CNA200710178098XA patent/CN101446563A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103842806A (en) * | 2011-07-27 | 2014-06-04 | 原子能和代替能源委员会 | Determining the dopant content of a compensated silicon sample |
| CN108027331A (en) * | 2015-07-03 | 2018-05-11 | 株式会社岛津制作所 | Fluorescent x-ray analyzer and the spectrum display methods wherein used |
| US10948435B2 (en) | 2015-07-03 | 2021-03-16 | Shimadzu Corporation | X-ray fluorescence analysis device, and spectrum display method used in same |
| CN108027331B (en) * | 2015-07-03 | 2023-09-15 | 株式会社岛津制作所 | Fluorescent X-ray analysis device and spectrum display method used therein |
| CN111912811A (en) * | 2020-08-05 | 2020-11-10 | 西安奕斯伟硅片技术有限公司 | Method and device for measuring element content in monocrystalline silicon |
| CN111912811B (en) * | 2020-08-05 | 2023-07-25 | 西安奕斯伟材料科技有限公司 | Method and device for measuring element content in monocrystalline silicon |
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