CN101442000A - Semiconductor device including semiconductor thin film, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film - Google Patents

Semiconductor device including semiconductor thin film, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film Download PDF

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CN101442000A
CN101442000A CNA2008101881434A CN200810188143A CN101442000A CN 101442000 A CN101442000 A CN 101442000A CN A2008101881434 A CNA2008101881434 A CN A2008101881434A CN 200810188143 A CN200810188143 A CN 200810188143A CN 101442000 A CN101442000 A CN 101442000A
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light
film
semiconductor film
phase
alignment mark
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CN101442000B (en
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小川裕之
秋田典孝
谷口幸夫
平松雅人
十文字正之
松村正清
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LG Electronics Inc
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Liguid Crystal Advanced Technology Development Center K K
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Abstract

Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

Description

Comprise the semiconductor device of semiconductive thin film, the method for crystallising and the device of this film
The application is for dividing an application, and its original application is the patent application of submitting to Patent Office of the People's Republic of China on August 9th, 2005, and application number is 200510091162.1, and denomination of invention is " comprising the semiconductor device of semiconductive thin film, the method for crystallising and the device of this film ".
Background of invention
The present invention relates to semiconductive thin film method for crystallising, have crystalline semiconductor film substrate, be used for the crystallization apparatus of semiconductive thin film, the manufacture method of the optical modulation element, the semiconductor device that in crystalline membrane, forms and the thin-film semiconductor device that use at this crystallization apparatus, they all are applicable to for example active matrix flat panel display of electronic installation.The technology of the alignment mark that particularly, the present invention relates in amorphous or polycrystalline semiconductor thin film to form under the situation in territory, recrystallization zone of big crystallite dimension, is formed for aiming at.
Semiconductor film formation technology is to be used for forming on dielectric substrate for example important technology of thin-film transistor (TFT), contact type sensor or electrooptical device of semiconductor device.Generally, have the MIS structure and particularly have the field-effect transistor of MOS structure as thin-film transistor.
For example, have this general characteristic as the LCD of an example of flat-panel monitor, i.e. thin and in light weight, the low in energy consumption and easy realization of size is colored to be shown.Because these features, LCD is widely used as the display of PC and other various personal digital assistant devices.When LCD was active array type, thin-film transistor was used as the switching device of pixel, and as the device that constitutes pixel-driving circuit.
Under a lot of situations, the active layer of thin-film transistor, promptly the charge carrier mobile layer is to be formed by the Si semiconductor film.Under normal conditions, the Si semiconductor film is formed on the dielectric substrate by for example CVD or sputter.According to for example film-forming temperature and these conditions of rate of film build, this Si semiconductor film forms amorphous silicon or polysilicon on dielectric substrate, and this polysilicon comprises the many crystal grain that separated by the grain boundary.
Compare with silicon metal, the carrier mobility of amorphous silicon is hanged down one or two order of magnitude.Therefore, usually, make the amorphous silicon film crystallization that once forms by high-temperature heat treatment, and use this silicon metal.
The carrier mobility of the polysilicon that forms by crystallization is than high about 10 times to 100 times of the carrier mobility of amorphous silicon.This feature is very good for the semiconductor film material that will be formed for the switching device of LCD for example.In this case, propose a kind of method for crystallising recently, wherein,, generate the silicon metal of big crystallite dimension for mobility that improves electronics or hole and the inhomogeneities that reduces grain boundary in the channel region.
In recent years, wherein polysilicon has had vigorous growth as the application of the thin-film transistor of active layer.Because it carries out the ability of high speed operation, the thin-film transistor that utilizes silicon metal as constitute logical circuit for example the switching device of domino logic door and cmos transmission gate caused special concern.These logical circuits have been used to drive circuit, multiplexer, EPROM, EEPROM, CCD and the RAM of LCD for example or electroluminescence (EL) display.
The typical prior art processes that forms the silicon thin film that comprises polysilicon region will be described now.In this technology, the dielectric substrate of preparation example at first as forming by glass.Then, for example on this insulated substrate surface, form SiO 2Film is as bottom (undercoat layer) or resilient coating.Subsequently, on this bottom, form the thick amorphous silicon film of about 50nm by for example CVD.In order to reduce the hydrogen concentration in the amorphous silicon film, this amorphous silicon film is carried out dehydrogenation handle.This amorphous silicon film comes crystallization by for example excimer laser crystallization method.Particularly, excimer laser beam is applied to this amorphous silicon film.Therefore, this amorphous silicon fusing and recrystallize into polysilicon.
At present, the silicon thin film that is formed by the polysilicon of such acquisition is used as the active layer of n raceway groove or p channel thin-film transistor.In this case, the mobility of this thin-film transistor (mobility that electronics or hole are caused by electric field) is approximately 100 to 150cm when the n channel transistor 2/ V sec, and when the p channel transistor, be 80cm 2/ V sec.Utilize this thin-film transistor, drive circuit for example signal-line driving circuit and scan line drive circuit can be formed on the same substrate as the pixel switch device, and therefore can make the display of integrated drive electronics.The structure of this integral body can reduce the production cost of display.
Yet, the electrology characteristic of utilization by the thin-film transistor of the polysilicon membrane manufacturing of art methods crystallization also do not have high to the DC transducer that can be applied to digital of digital video data is converted to analog video data, and the signal processing circuit that perhaps is applied to the fast acquisition of digital video data is this degree of gate array for example.In order thin-film transistor to be applied to for example D C transducer or signal processing circuit, to think to have current drives performance than above-mentioned thin-film transistor Senior Two to five times.In addition, also must about 300cm 2The field-effect mobility of/V sec.
In order to realize the added value of higher levels of function of display and Geng Gao, must further improve the electrology characteristic of thin-film transistor.For example, when increasing the static memory of being made up of thin-film transistor for memory function is provided to each pixel, the electrology characteristic of this thin-film transistor of needs is substantially equal to utilize the transistorized electrology characteristic of single crystal semiconductor.Therefore, must improve the characteristic of semiconductor film.
A kind of method of possible raising semiconductor film characteristic is to make the degree of crystallinity of semiconductor film approach the degree of crystallinity of monocrystalline.If the whole semiconductor film on the dielectric substrate can be made for monocrystalline, obtain to be similar to and use the Devices Characteristics of SOI substrate just to become possibility, use the device of SOI substrate to be studied as LSI of future generation.This effort has been carried out more than 10 years as 3D device project, but does not also set up the technology of the whole semiconductor film of single crystals.At present, still have the needs that on dielectric substrate, form single crystal semiconductor films.
About the crystallization of amorphous semiconductor film, a kind of technology has been proposed, wherein, crystallization crystal grain in the semiconductor film is long to bigger size, thereby can obtain and in the situation effect much at one of this amorphous semiconductor film of single crystals basically.In this method, the irradiation excimer laser beam utilizes phase shifter spatially this excimer laser beam to be carried out intensity modulated.In this phase modulated excimer laser crystallization method, give Temperature Distribution to amorphous silicon membrane, and this amorphous silicon membrane fusing and crystallization again.Therefore, in crystal silicon film, obtain big crystallite dimension crystal region.
In this phase modulated excimer laser crystallization method, adopt phase shifter on the plane of silicon thin film, to give excimer laser beam a kind of intensity distributions, the temperature gradient corresponding to this intensity distributions is provided in this silicon thin film.This temperature gradient helps to be parallel on the direction on silicon thin film plane from the growth of low-temperature space to the crystalline silicon crystal grain of high-temperature region.As a result, compare the larger sized crystalline silicon of to grow with traditional laser crystallization method.
According to this method, silicon metal crystal grain grows into about several microns granularity, and it can comprise for example channel region of thin-film transistor of active device at least.By form thin-film transistor in megacryst silicon crystal grain zone, the thin-film transistor that acquisition has the electrology characteristic that satisfies above-mentioned requirements becomes possibility.
This phase modulated excimer laser crystallization method is the effective technology that is used to obtain big crystallite dimension crystalline silicon.Yet, in this phase modulated excimer laser crystallization method, at first at the low-temperature space of crystal growth growth crystallite.Utilize this crystallite as seed crystal, the bigger crystal grain of growing.Therefore, again in the crystal silicon film, both there had been the zone that comprises big crystallite dimension crystalline silica polymorph grain, had the polycrystalline zone that comprises little crystallite dimension silicon metal crystal grain again at this.Under the situation that adopts this crystallization processes, must accurately locate the thin-film transistor that in the zone that comprises big crystallite dimension crystalline silica polymorph grain, forms subsequently.
If thin-film transistor is from big crystallite dimension silicon metal region shifting and be formed on the polycrystalline zone, the electrology characteristic of thin-film transistor will be degenerated significantly.If the thin-film transistor that this electrology characteristic is degenerated for example is included in the flat-panel monitor, this flat-panel monitor will become substandard products, and output will reduce significantly.In order to form a plurality of big crystallite dimensions continuously forming a plurality of thin-film transistors on the same substrate again under the situation in silicon metal zone,, just can not obtain enough positional precisions if only move substrate by mechanical means.
In order to address this problem, attempted in crystallization processes, being pre-formed alignment mark.Particularly, before crystallization again, on bottom or support substrates, form alignment mark in advance.Carry out crystallization processes according to this alignment mark.
Fig. 9 illustrates the example of prior art alignment mark formation method.To form the silicon thin film of thin-film transistor (not shown) therein in order to form, preparation example such as glass or quartzy dielectric substrate 111.In case of necessity, on dielectric substrate 111, form for example SiO 2The bottom (not shown).Subsequently, on the surface of dielectric substrate 111 or bottom, form the alignment mark 112 of reservation shape by for example photoetching or chemical etching.Then, for example on support substrates, form amorphous silicon membrane or polysilicon membrane 113.By discerning alignment mark 112 optically, confirm the position of dielectric substrate 111, and come crystallization presumptive area 114 by phase modulated excimer laser crystallization method.
This crystal region 114 had both comprised that polycrystalline zone 116 also comprised big crystallite dimension crystalline region 115, this polycrystalline zone 116 comprises the little crystallite dimension silicon crystal grain that begins crystallization from it, and big crystallite dimension crystalline region 115 comprises the big crystallite dimension monocrystalline of having grown from little crystallite dimension silicon crystal grain.Carry out crystallization with reference to alignment mark 112, and will begin the polycrystalline zone 116 in zone and big crystallite dimension crystalline region 115 as crystallization and be arranged on precalculated position on the dielectric substrate.
Yet above-mentioned art methods need form the additional step of alignment mark 112 by for example photoetching.Therefore, the elongated this problem of manufacturing process has appearred.
On the other hand, the active layer of thin-film transistor (charge carrier mobile layer) is formed by for example Si semiconductor film.The Si semiconductor film is divided into amorphous silicon (α-Si) film and polycrystalline (on-monocrystalline silicon metal) film usually.
Polysilicon mainly be polysilicon (polysilicon) (polycrystalline-Si), but microcrystal silicon (μ c-Si) is also referred to as polysilicon.Also comprise for example SiGe, SiO, CdSe, Te and CdS outside the available semiconductor film material silica removal.
As the method for crystallising that improves the crystalline silica polymorph particle size, a kind of method has been proposed, wherein, on as the semiconductor film of process object, shine by in optical system, inserting the light (for example, referring to Japanese patent application KOKAI publication number No.2000-306859 (hereinafter referred to as document 1)) of phase shifter (phase modulation component) intensity distributions that produce, that have appointment.
In addition, as the method that increases crystallite size when the crystallization amorphous semiconductor films, the present inventor has proposed to shine and has used phase modulation component spatially to carry out the excimer laser beam of intensity modulated.In this method, amorphous silicon membrane is melted and crystallization again by laser beam, and therefore becomes polysilicon membrane.This method is called " phase modulated excimer laser crystallization method " (for example, referring to Surface Science, Vol.21, No.5,278-287 page or leaf, 2000 (hereinafter referred to as document 2)).This inventor has made the development of this skilled industryization in propelling.
The big crystallite dimension monocrystalline silicon crystal grain that is formed by the method for crystallising of document 2 is centered on by countless little crystallite dimension polysilicon grain or amorphous silicon.Big crystallite dimension monocrystalline silicon crystal grain has the channel region that can form one or more thin-film transistors or the size of a plurality of channel regions.
The inventor makes for example industrialization development of disclosed method for crystallising in document 2 in propelling.Even successfully obtain big crystallite dimension silicon crystal grain by this development, also can cause this situation, that is, the channel region of thin-film transistor is not formed on the intra-zone of big crystallite dimension monocrystalline silicon crystal grain.If moving of occurrence positions then this problem can occur, i.e. for example extremely degeneration of switching characteristic of the electrology characteristic of thin-film transistor.
Therefore it is consistent with the channel region of thin-film transistor that the sin qua non makes the big crystallite dimension monocrystalline silicon crystal grain that obtains by above-mentioned crystallization, to realize the speed-sensitive switch characteristic of thin-film transistor.In order to make the formation position consistency of big crystallite dimension monocrystalline silicon crystal grain and thin-film transistor, when carrying out crystallization by the phase modulated method, the inventor has studied the formation of the alignment mark that is used to aim at simultaneously.
Undertaken by the phase modulated method in the method for crystallization, needing high flow capacity (fluence).Yet, because this high flow capacity is ablated in the zone without phase modulated (film destroy).Therefore, the problem that exists the formation of the formation of crystal grain and alignment mark not carry out simultaneously.
Also do not set up such method and apparatus, this method and apparatus is used to make the scope of the big crystallite dimension monocrystalline silicon crystal grain that forms on substrate accurately to conform to the position that will form thin-film transistor.
The present invention can provide a kind of method and apparatus, and this method and apparatus can accurately form the semiconductor active device, i.e. switching device by the formation of the distinctive alignment mark of the present invention in the zone that has formed big crystallite dimension crystal grain by crystallization.
Summary of the invention
The zone that has different crystallinity on semiconductor film can optical identification.Form reservation shape if having the zone of different crystallinity, this zone just can be used as alignment mark.In an embodiment of the present invention, the alignment mark by needing in the initial laser radiation formation crystallization processes subsequently.Particularly, utilize the alignment mark that forms by initial laser radiation, make substrate alignment and carry out crystallization processes.Form the single grain of big crystallite dimension by this crystallization processes.In another embodiment, when being used for the initial laser radiation technology of crystallization, be formed on the alignment mark that needs in the photoetching of thin-film transistor manufacturing step simultaneously.
According to embodiments of the invention, provide a kind of and be used to utilize laser to come the method for crystallising of crystallization amorphous or polycrystal semiconductor film, comprising: form alignment mark by the precalculated position of first laser radiation on amorphous or polycrystal semiconductor film; And utilization forms the crystal region with big crystallite dimension based on the aligning of alignment mark by second laser radiation.
In this method for crystallising, second laser radiation has the energy density higher than first laser radiation.In addition, in this method for crystallising, carry out second laser radiation by phase shifter.In the step that forms this alignment mark, be formed on alignment mark that need, that be used for photoetching in the subsequent step of making thin-film transistor simultaneously.
According to embodiments of the invention, provide a kind of semiconductor film to form substrate, this semiconductor film forms substrate and comprise support substrates and the semiconductor film that forms on this support substrates surface, and wherein this semiconductor film comprises: by the alignment mark part of the formation of first laser radiation on the precalculated position; With the territory, recrystallization zone that forms by second laser radiation with big crystallite dimension.
This semiconductor film forms substrate and also comprises the bottom that is formed by the insulating material between this support substrates and this semiconductor film.In addition, this semiconductor film formation substrate also comprises the diaphragm that is formed by the lip-deep insulating material of this semiconductor film.
According to embodiments of the invention, a kind of optical modulation element is provided, this optical modulation element comprises: light modulated also is formed for the first intensity modulation structure of the light distribution of crystallization; With the second intensity modulation structure that forms as one with the first intensity modulation structure or form dividually, this second intensity modulation structure light modulated also is formed for forming the light distribution of alignment mark, and this alignment mark is represented the precalculated position on the crystal region.
In this optical modulation element, this second intensity modulation structure comprises can compare the pattern of reduction light intensity to arbitrary value with the light intensity that is used for crystallization.In this optical modulation element, the second intensity modulation structure is the structure that changes light intensity when image focusing.In this optical modulation element, the structure that changes light intensity when image focusing changes phase modulation values selectively or partly.In this optical modulation element, when image focusing, change the area that the structural change of light intensity can printing opacity.In this optical modulation element, the light transmission capacity of the pattern that the second intensity modulation structural change can printing opacity.In this optical modulation element, so constitute the second intensity modulation structure, make by the area that has the zone of out of phase in the transmission region area of netted or dot pattern decision per unit area or the per unit area.
According to embodiments of the invention, a kind of optical modulation element is provided, this optical modulation element comprises light modulated and forms two or more intensity modulation zones of predetermined light distribution, wherein at least a in these two or more intensity modulation zones is made up of two kinds of basic pattern, first basic pattern in these two kinds of basic pattern comprises one group of resistance light zone and transmission region, and second basic pattern in these two kinds of basic pattern only comprises a resistance light zone, perhaps comprise one group of resistance light zone and transmission region, and the area ratio in resistance light zone is greater than the area ratio in resistance light zone in first basic pattern.
According to embodiments of the invention, a kind of optical modulation element is provided, this optical modulation element comprises light modulated and forms two or more intensity modulation zones of predetermined light distribution, at least a first basic pattern and second basic pattern of comprising in these two or more intensity modulation zones wherein, this first basic pattern comprises one group of two or more phase modulated zone with out of phase modulation value, this second basic pattern only comprises the zone with single phase value, comprises that perhaps its area ratio is different from one group of two or more phase modulated zone with out of phase value of area ratio in first basic pattern.
According to embodiments of the invention, a kind of method of making thin film semiconductor's substrate is provided, wherein presumptive area is shone on thin film semiconductor's substrate of non-single crystal semiconductor film from the light of light source and crystal growth having continuously by being unit with the predetermined area, this method comprises: the precalculated position on non-single crystal semiconductor film forms first light distribution or second light distribution for the light from light source, this first light distribution is used for the presumptive area of crystallization non-single crystal semiconductor film, and this second light distribution is used to form the alignment mark that its optical characteristics is different from the optical characteristics of non-single crystal semiconductor film; Use rayed non-single crystal semiconductor film with first or second light distribution with predetermined timing; And the presumptive area of crystal growth non-single crystal semiconductor film, and at this precalculated position formation alignment mark.
In the method for making thin film semiconductor's substrate, form first and second light distribution simultaneously, and the light with first and second light distribution is radiated on the non-single crystal semiconductor film simultaneously.
According to embodiments of the invention, a kind of thin-film semiconductor device is provided, this thin-film semiconductor device comprises from the semiconductor layer of the non-single crystal semiconductor film crystal growth that provides at irradiation object and the alignment mark that forms this non-single crystal semiconductor film, this semiconductor layer and alignment mark are by utilizing a kind of above-mentioned optical modulation element, with the light with first light distribution and second light distribution is that unit irradiation non-single crystal semiconductor film forms with the predetermined area, this first light distribution is used for the crystallization non-single crystal semiconductor film, and this second light distribution is used to form the alignment mark of the position on the expression crystal region.
According to embodiments of the invention, a kind of manufacture method of thin-film semiconductor device is provided, comprise:, be formed for crystallization in first light distribution of the non-single crystal semiconductor film that provides on the irradiation object be used to form second light distribution of the alignment mark of the position on the expression crystal region by utilizing a kind of above-mentioned optical modulation element; With the predetermined area is the unit irradiates light, and this light has first light distribution that is used for crystallization and is used to form second light distribution of the alignment mark of the position on the expression crystal region; And in non-single crystal semiconductor film, form crystal growth semiconductor layer and alignment mark.
According to embodiments of the invention, a kind of display is provided, comprising: a plurality of pixel electrodes that provide with horizontal and vertical matrix form; Be connected to a plurality of thin-film transistors of these a plurality of pixel electrodes; And the scan line and the holding wire that are electrically connected to these a plurality of thin-film transistors, wherein this pixel electrode, this thin-film transistor, this scan line and this holding wire are formed on this semiconductor film formation substrate, and this display also comprises can be according to the indication mechanism of the operation display message of thin-film transistor, and the operation of this thin-film transistor is corresponding to the signal that offers holding wire.
According to embodiments of the invention, a kind of display is provided, comprise: switching device, this switching device comprises the zone that obtains with the reservation shape patterning by with semiconductor layer, and this semiconductor layer is by utilizing a kind of above-mentioned optical modulation element, apparatus to be useful on the light distribution of this non-single crystal semiconductor film of crystallization and comprising that the light of the light distribution of the pattern of representing the position on the crystal region is that unit shines non-single crystal semiconductor film and begins crystal growth from the non-single crystal semiconductor film that irradiation object provides with the predetermined area; Be connected to the holding wire of this switching device; With preset distance with its on form the dielectric substrate of switching device relative to (counter) electrode; And can come the indication mechanism of display message according to the operation of switching device, the operation of this switching device is corresponding to the signal that offers holding wire.
According to embodiments of the invention, a kind of method for crystallising is provided, be used for having rayed non-single crystal semiconductor film and this non-single crystal semiconductor film of crystallization of two or more light distribution, in the first and second light distribution zones that are used for providing two or more light distribution, the second light distribution zone is made up of two kinds of zones with different light intensity degree, and sets up I 1I 2I 3Relation, I wherein 1Be the light intensity maximum in the first light distribution zone, I 2And I 3Be respectively the light intensity high-value and the low-value in the second light distribution zone.
In this method for crystallising, when the minimum intensity of light of ablating owing to the even irradiation of the light of light distribution in non-single crystal semiconductor film is I aThe time, set up I aI 2I 3Relation.In this method for crystallising, when non-single crystal semiconductor film is Ic owing to the minimum intensity of light that melts with the irradiation of the light with even light distribution, set up I 2I cI 3Relation.
According to embodiments of the invention, a kind of phase shifter is provided, this phase shifter comprises: light modulated also is formed for the intensity modulation structure of the light distribution of crystal semiconductor film; With form as one with this intensity modulation structure or form dividually and form structure by the alignment mark that forms with this intensity modulation structure components identical (member), this alignment mark forms the structure light modulated and forms the light distribution that comprises the reservation shape pattern, and forms the alignment mark in the precalculated position on the expression crystal region.
In this phase shifter, this intensity modulation structure comprises a kind of above-mentioned optical modulation element.
According to embodiments of the invention, a kind of device that is used for crystalline semiconductor film is provided, this device comprises: the light source of the light of emission predetermined wavelength; A kind of above-mentioned optical modulation element; And the object maintaining body that keeps irradiation object and can move freely.
According to embodiments of the invention, a kind of device that is included in the thin-film transistor that the amorphous that is arranged on the substrate or polycrystal semiconductor film form is provided, this substrate has the surface that is formed by insulating material, this device comprises alignment mark and thin-film transistor at least, this alignment mark comprises by amorphous or polycrystal semiconductor film are carried out the zone that thermal metamorphism forms, make this zone have the optical characteristics of reflective condition, this is different from the optical characteristics of this amorphous or polycrystal semiconductor film, and this thin-film transistor is arranged in the zone that forms by this amorphous of part single crystals or polycrystal semiconductor film.
According to embodiments of the invention, can freely change the irradiation light intensity.Therefore, be used for obtaining the identical step of the semi-conductive flow of big crystallite dimension crystalline phase irradiation from semiconductor film, can be simultaneously form alignment mark having on the pending substrate of thin film semiconductor.
The accompanying drawing summary
Figure 1A illustrates manufacturing step according to first embodiment of the invention to Fig. 1 E;
Fig. 2 illustrates the object lesson of the mask that is used to form alignment mark of the present invention;
Fig. 3 A is the view that is used to explain the phase modulated excimer laser crystallization method that adopts in the present invention to Fig. 3 D;
Fig. 4 is the perspective view that can be used for phase shift mask of the present invention;
Fig. 5 A illustrates and can be used for the phase shifter that has the step part with the trellis arranged in form of the present invention, and Fig. 5 B illustrates the light distribution relevant with this phase shifter;
Fig. 6 A and Fig. 6 B are illustrated in many nmosfet formation regions in the first embodiment of the invention and are formed on state on the extensive insulation substrate;
Fig. 7 illustrates the object lesson that can be used for semiconductor film crystallization apparatus of the present invention;
Fig. 8 A and Fig. 8 B illustrate the object lesson of the LCD of using semiconductive thin film formed according to the present invention;
Fig. 9 illustrates the method for crystallising of semiconductor film of the prior art;
Figure 10 is the schematic diagram that is used to illustrate the object lesson of the crystallization apparatus that can use the present invention second and the 3rd embodiment;
Figure 11 is the schematic diagram that the object lesson of the indicia patterns MK that can be used for crystallization apparatus shown in Figure 10 is shown, and the light intensity that this indicia patterns MK is used for being used for from light source crystallization is set to predetermined value;
Figure 12 A schematically illustrates the light intensity variation pattern that passes indicia patterns shown in Figure 11 and the example of degree to Figure 12 C;
Figure 13 A is to be used for indicia patterns shown in the key-drawing 12A and the phase modulated structure can change the schematic diagram of the principle of transmitted light intensity according to it to Figure 13 D;
Figure 14 A to Figure 14 C be used to explain as with reference to figure 13A to 13D the phase change in described some spreading range and the schematic diagram of the relation between the light intensity;
Figure 15 A and Figure 15 B are used for explaining the schematic diagram that concerns between the unthreaded hole function of the image focusing optical system of crystallization apparatus combination shown in Figure 10 and point spread function;
Figure 16 A to Figure 16 C be used for illustrating in part with first phase value and have under the paired situation of the part of second phase value, at the schematic diagram of the ratio (duty ratio) of the described indicia patterns transmission part of reference Figure 11;
Figure 17 is used for explaining for passing the light of Figure 16 A to indicia patterns shown in the 16C (phase modulation component), relation between light intensity and the phase difference and the curve chart that has the part of first phase value and have the relation between the part of second phase value;
Figure 18 is the schematic diagram that is used to illustrate indicia patterns shown in Figure 11, and resistance light metallic film wherein is set selectively, thus a pair of shield portions and non-shield portions, that is and, 1 district (Unit 1) can form the transmission part with predetermined area;
Figure 19 A is to be used for illustrating that the duty ratio in indicia patterns shown in Figure 180 is the schematic diagram of (resistance light area)/(glazed area) to Figure 19 C;
Figure 20 is the ratio that is used to explain shield portions and non-shield portions as being unit when changing with 1 district (unit) with reference to figure 19A as described in the 19C, the variation of transmitted light intensity;
Figure 21 A and Figure 21 B are the schematic diagrames that is used to illustrate the example of light intensity change pattern, this light intensity change pattern provides available light intensity, thereby on semiconductor film forms alignment mark with when carrying out crystal growth in the rayed with predetermined strength on semiconductor film;
Figure 22 is the curve chart that is used to explain the example of light distribution, and this light distribution obtains by using pattern shown in Figure 21 A and the 21B that the semiconductor film on the dielectric substrate is used the light with predetermined strength;
Figure 23 A and Figure 23 B are on the basis that is illustrated in reference to the principle of figure 21A and 21B and Figure 22 explanation, use 1100mJ/cm in identical manufacturing step 2The enlarged photograph of the result's who obtains under the situation of the semiconductor film on the rayed same substrate of flow example;
Figure 24 is the enlarged photograph in zone " A " among Figure 23 A;
Figure 25 is the view that is used to explain the example that utilizes the result that pattern shown in Figure 23 A obtains under the situation that forms mark on the semiconductor film on the substrate and detect from the detector of the known lithographic equipment of optical signals of this mark;
Figure 26 is the schematic diagram that is used for illustrating the example of the indicia patterns of using at crystallization apparatus shown in Figure 10 (phase modulation component);
Figure 27 A is that explanation is used to utilize phase modulation component shown in Figure 11 to form the schematic diagram of the manufacturing step example of electronic device (semiconductor active device) on the pending surface of dielectric substrate to Figure 27 F;
Figure 28 is the schematic diagram that is used to illustrate an example, and in this example, to forming in the step of electronic device shown in the 27F, substrate moves along the plane of this substrate with reference to alignment mark AM at Figure 27 A; With
The example of the display that the transparent insulation substrate of the schematically illustrated utilization of Figure 29 support semiconductor film according to the present invention is made utilizes and is pre-formed alignment mark with reference to the described phase modulation component of figure 12A on the presumptive area on amorphous semiconductor film surface.
Embodiment
First embodiment
Now will be with reference to Figure 1A to Fig. 1 E explanation first embodiment of the present invention.At first, the support substrates 11 that preparation is formed by insulating material, for example glass substrate, quartz substrate or plastic.Utilize this support substrates 11, manufacturing is comprised that this support substrates 11 and the semiconductor film that is positioned at the semiconductor film 13 on this support substrates 11 form substrate 10.Be applied in the present invention under the situation of LCD for example, suggestion uses the nothing alkalescence glass substrate of Corning #1737 for example as this support substrates 11.The material of support substrates 11 is not limited to insulating material among the present invention.In case of necessity, can use for example Semiconductor substrate of Si, Ge, SiGe, SiGeC, GaAs, GaP, InAs, GaN, ZnTe, CdSe or CdTe.
On this support substrates 11, form the dielectric film 12 that for example about 500nm is thick, be used as bottom.This dielectric film 12 is by for example SiO 2Film forms.This SiO 2Film can form by CVD, and for example plasma chemical vapor deposition or low pressure chemical gaseous phase deposition perhaps form by sputter.Prevent from the desirable diffusion of impurities of the support substrates 11 of for example glass semiconductor film 13 to the dielectric film 12 as the dielectric film 12 of the bottom of semiconductor film 13.In addition, dielectric film 12 has the heat accumulation effect, with the heat that is used for accumulating in semiconductor film 13 fusings and produces at semiconductor film 13 during crystallization.Dielectric film 12 can form stack layer structure (not shown), for example SiN film and SiO 2The combination of film, rather than single SiO 2Film.
Then, form technology by traditional cvd film, for example plasma chemical vapor deposition or low pressure chemical gaseous phase deposition perhaps by sputter, form amorphous or polycrystal semiconductor film 13 on dielectric film 12.For example, can pass through monosilane SiH 4Thermal decomposition at SiO 2Form silicon thin film on the film.In this case, in 600 ℃ to 700 ℃ normal film-forming temperature scope, the granularity that forms the part of monocrystalline wherein is approximately the polycrystal layer of 20nm.In about temperature range below 500 ℃, form amorphous film.Semiconductor film 13 used herein be about 30 to 200nm thick, preferably approximately 50 to the thick silicon thin film of 100nm.
In the present invention, semiconductor film 13 is not limited to silicon thin film.Can use physically suitable semiconductor film, for example Ge, SiGe or SiGeC film.Under normal conditions, semiconductor film 13 is formed on the whole surface of dielectric film 12.
Subsequently, shown in Figure 1A, on the whole surface of semiconductor film 13, form the thick diaphragm 14 of about 300nm as so-called coverlay.For example, SiO 2Film, SiN film, SiON film, SiOx (x=1 or 2) film or its stack layer structure can be used as diaphragm 14.This dielectric film 12 and diaphragm 14 have the heat accumulation effect, to be used for accumulating in the heat that semiconductor film 13 produces.
After dehydrogenating technology, the alignment mark 15 that is used for aiming at the territory, recrystallization zone in phase modulated excimer laser crystallization method (back will illustrate) is formed on the part of semiconductor film 13 by the laser crystallization method.Alignment mark 15 forms in the step of thin-film transistor also useful after crystallization again.
In addition, when assembling liquid crystal display (referring to Fig. 8 B), alignment mark can be used for aiming in the step that connects substrate 91 and 92 by shaped as frame potted component 118.And alignment mark can be used for aiming in the scribing step that substrate 61 for example shown in Figure 6 is divided into smaller substrate.In addition, form semiconductor device for example in the step of thin-film transistor in semiconductor film, alignment mark can be used as the reference of determining the mask position.In initial laser radiation technology, can add the required alignment mark of photoetching in the thin-film transistor manufacturing step that is formed on subsequently.
As shown in Figure 2, be used to form the mask of alignment mark or the irradiation formation alignment mark 15 that phase shifter 16 (the following alignment mark that also is called forms mask or phase shifter) passes through laser beam 19.At this moment laser radiation is called " first laser radiation ".Preferably, this laser beam should be to have the evenly homogenizing light beam of light intensity of two dimension.
Can constitute alignment mark and form mask 16, make to be used for determining that alignment mark shaped aperture 18 is formed on sheet metal 17, for example 300nm to the thick chromium thin film of 500nm or 300nm to the thick aluminium film of 400nm.The laser beam of vertical incidence on support substrates 11 passes opening 18 and arrives semiconductor film 13.Laser beam heats semiconductor film 13, these semiconductor film 13 heated shapes be corresponding to the shape of opening 18, and form the thermal metamorphism zone in semiconductor film 13.The optical characteristics in thermal metamorphism zone is different from the not optical characteristics of heating region, so the former with the latter can optically be differentiated.
When utilizing alignment mark shown in Figure 2 to form mask 16, alignment mark is a cross.The shape of alignment mark is not limited to cross.The resistance luminescent material of mask is not limited to the sheet metal of reflection lasering beam, and can be the material that absorbs laser beam, for example silicon nitride film.Selectively, can use the phase shifter of local modulation laser beam irradiation intensity.When using this phase shifter, mark part is made up of two or more irradiation areas with different light intensity.
Utilizing as shown in Figure 2 alignment mark to form mask or phase shifter (shifter) at 16 o'clock, for manufacturing installation and manufacturing process for simplicity, can use to be applicable to the excimer laser apparatus of back with the phase modulated excimer laser crystallization method of explanation.In this case, preferred step that forms alignment mark 15 and the crystallisation step again that the back will illustrate carried out continuously.Under thermal metamorphism alignment mark 15 will be formed on situation in amorphous or the polysilicon membrane 13, in order to ensure accurate profile and with the optics difference of adjacent part, the preferred approximately 0.3J/cm that for example uses 2Flow.For example, XeCl (wavelength: 248nm) or KrF (wavelength: 308nm) can be as the excimer laser source that can be used for again crystallisation step (back will illustrate) usually.
Subsequently, shown in Fig. 1 C, can use the back with the phase modulated excimer laser crystallization method that describes in detail.Excimer laser beam 20 with for example light distribution shown in Fig. 3 B is radiated on the surface of diaphragm 14.This laser radiation is called " second laser radiation ".In second laser radiation, according to the position of coming the irradiation of setting laser bundle by first laser radiation preformed alignment mark 15 in semiconductor film 13.For example, the size and dimension in the zone of the second laser radiation effect is that every limit all is the rectangle of 2mm.Therefore, under normal conditions, on support substrates 11, scan irradiation position with reference to alignment mark 15.By a plurality of zones of Continuous irradiation, can be with matrix form described a plurality of zones of crystallization again.By this method, can form the large tracts of land crystal region.In second laser radiation, semiconductor film needs fusing.Therefore, the energy density that second laser radiation need be higher than first laser radiation.For example, use traffic is approximately 0.7 to 1.0J/cm 2Laser beam.
By utilizing second laser radiation of second laser beam 20, most of laser radiation zone of semiconductor film 13 becomes big crystallite dimension crystal region 21.Therefore, irradiation has for example excimer laser beam 20 of the suitable light distribution shown in Fig. 3 B, and gives semiconductor film 13 1 kinds of Temperature Distribution.Form big crystallite dimension crystal region 21, make that being heated to the above semiconductor film 13 of fusing point divides beginning to high-temperature part crystallization gradually from low-temp. portion.In the low temperature position with low laser beam intensity, (polycrystalline-Si) or microcrystal silicon (μ c-Si) at first form polysilicon.Yet,, help the growth of the crystal grain of growth easily, and form big crystallite dimension crystal region by crystal growth according to temperature gradient.In the territory, recrystallization zone, obtain to be enough to form for example large area crystal grain of the channel part of thin-film transistor.
Shown in Fig. 1 D, semiconductor film 13 is by partially-etched, and forms the semiconductor island 22 of mutual electric insulation, will form for example thin-film transistor in this semiconductor island 22.Be used at alignment mark 15 under the situation of step of Production Example such as thin-film transistor, the zone of alignment mark 15 can remain not etching, shown in Fig. 1 D.If alignment mark 15 is not used in manufacturing step subsequently, then can remove alignment mark 15.In island 22, the active area of thin-film transistor at least, promptly channel region is arranged in the territory, big crystallite dimension recrystallization zone.
Fig. 1 E is the cross-sectional view that is illustrated in two thin-film transistors 23 that form and that have same structure in two islands 22, as the object lesson of electronic device.Traditional method for fabricating thin film transistor can be applied to form these thin-film transistors 23.
In Fig. 1 E, the source region 24 of thin-film transistor 23, channel region 25 and drain region 26 are formed in the relevant island 22.SiO for example 2 Gate insulating film 27 be formed on the surface of channel region 25.Gate electrode 28 forms on this gate insulating film 27.Under normal conditions, support substrates 11 and thin-film transistor 23 are by for example SiO 2Insulating protective film 31 cover.Source electrode 29 and drain electrode 30 by through hole 32 from the source region 24 and drain region 26 draw.In this example, form thin-film transistor.Yet needless to say, the electronic component except the thin-film transistor for example pixel electrode of capacitor, diode and LCD panel can be formed in this island 22.
With reference now to Fig. 3,, the phase modulated excimer laser crystallization method of using in the present embodiment is described.For example, phase shifter is used for the phase modulated excimer laser crystallization method of present embodiment as shown in Figure 3A.Fig. 3 A illustrates the cross section of phase shifter 41.By the material of the transparent substrates with different-thickness adjacent area 42 and 43 is provided, for example the quartz substrate material forms phase shifter 41.Fig. 4 is the perspective view of phase shifter 41.Step part 44 places that boundary between two zones 42 and 43 forms form so-called phase shifting part, and the excimer laser beam 45 of incident there can diffraction or interference.Therefore, the incident excimer laser beam with even light intensity can have the spatial distribution that the cycle changes.
Phase shifter 41 in the present embodiment constitutes has step part 44, and this step part 44 makes the laser beam that passes adjacent patterns 42 and 43 have opposite phases (180 ° of phase differences).In other words, the zone 42 and 43 that is arranged alternately comprises first bar-shaped zone 42 and second bar-shaped zone 43, the phase change of the laser beam of homophase incident, make to have for example phase place of π, and have 0 phase place from phase shifter second bar-shaped zone 43 emitting laser bundles from phase shifter first bar-shaped zone 42 emitting laser bundles.
In the present embodiment, phase shifter 41 is that 1.508 rectangular substrate forms by refractive index.Each first and second bar-shaped zone 42 and 43 has the width of 25 μ m in the horizontal direction.The size of step Δ t between the bar-shaped zone 42 and 43 is corresponding to the phase difference θ between the outgoing laser beam.Phase difference θ is drawn by θ=2 π Δ t (n-1)/λ, and wherein λ is the wavelength of laser beam, and n is the refractive index of quartz substrate.For example, under the situation of using wavelength as the KrF excimer laser of 248nm, refractive index is 1.508.When step Δ t was 244nm, the phase difference between the transmitted light beam was 180 °.Therefore, can by with the degree of depth of 244nm selectively the smooth quartz substrate of etching and bar-shaped zone 42 corresponding parts form phase shifter 41.Zone by the etching attenuate is first bar-shaped zone 42, and etching area is not second bar-shaped zone 43.
When use had the phase shifter 41 of this structure, the laser beam intensity that obtains shown in Fig. 3 B distributed 46.In the semiconductor film 13 with the laser beam irradiation with intensity distributions 46, minimum intensity of light part 55 has minimum temperature.This semiconductor film 13 has the periodicity Temperature Distribution 47 according to laser beam intensity distribution 46.Usually, select intensity of laser beam and irradiation time, even make that semiconductor film 13 also can melt, and can obtain suitable temperature gradient in minimum intensity of light part 55.
If stop the irradiation of laser beam 45, have the part of minimum intensity of light, promptly the lowest temperature part 48,48 ' and 48 " in or drop to and be lower than fusing point with the temperature of semiconductor film 13 in the contiguous zone of these parts, and beginning crystallization.At this moment, many polycrystalline occur, this polycrystalline is used as the semiconductor film seed crystal of crystallization again.Particularly, crystallite or polycrystalline are at first in lowest temperature part 48,48 ' and 48 " in form.Yet, divide beginning continuously during growth at crystal from the low-temp. portion of temperature gradient part 49, help to have the growth of crystal block section in the crystal orientation of the crystal growth of being particularly suitable for.Therefore, can obtain a plurality of big relatively crystal grain in each temperature gradient part 49.Subsequently, the territory, big crystallite dimension recrystallization zone of formation and thin-film transistor active area size match.
In the above-described embodiments, as Fig. 3 A and shown in Figure 4, structure phase shifter 41 makes the linear phase shifting part that is formed by step part 44 be arranged in parallel.Yet the structure of phase shifter is not limited thereto.
For example, shown in Fig. 5 A, can use the step part 44 that wherein has different area area modulated type phase shifter with matrix arrangement.Particularly, area modulated type phase shifter is such mask, wherein modulates the area ratio of step part 44, to obtain the light distribution shown in Fig. 5 B.In Fig. 5 A, symbol W represents the repeat length of phase shifter, and Δ t is the size of step.In Fig. 5 B, BP is beam profile (beam profile), and PH is the amplitude of beam profile, and PW is the pitch width (pitch width) of beam profile, and θ is the angle between the part of the mutual reversed dip of beam profile.
Fig. 3 C is the microphoto that the crystal semiconductor film 50 of phase shift mask 41 acquisitions that utilize shown in Fig. 3 A is shown.The position that polycrystalline zone 51,51 ' and 51 " is vertically formed in the lowest temperature part 48,48 ' and 48 corresponding to phase shift mask 41 ". Crystal 51,51 ' and 51 " grows into the large single crystal that granularity is about 2.5 μ m in the horizontal from the polycrystalline zone.In horizontal adjacent polycrystalline zone 51,51 ', 51 " between the middle part finish crystal growth.Vertical grain boundary 53 appears at the middle part.By suitably selecting temperature gradient, can obtain bigger crystal block section 52.Big crystallite dimension crystal region can form and be adjacent to polycrystalline zone 51,51 ' and 51 ".
Fig. 3 D illustrates the example that forms district 54 corresponding to the device of the crystal semiconductor film 50 shown in Fig. 3 C.For example, the channel region 25 of thin-film transistor 23 or thin-film transistor 23 is formed on each device and forms in the big crystallite dimension crystal region in the district 54.
Fig. 6 illustrates wherein many devices and forms district's 54 object lessons that are formed on the extensive insulation substrate 61.For example, be used as the SiO of bottom 2Film 62 is formed on by for example not having on the dielectric substrate 61 that alkaline glass substrate forms.Amorphous or polysilicon film 63 are formed on this SiO 2On the film 62.Alignment mark 64 at first is formed in this silicon fiml by first laser radiation.
Subsequently, form a plurality of crystal regions 65.Each XY worktable can form each crystal region 65 by second laser radiation when moving with preset space length, for example, dielectric substrate 61 has been installed on this XY worktable.For example, the time spent is done in each second laser radiation, can be used for the aligning of laser radiation according to the alignment mark 64 that forms on semiconductor film.Therefore, crystal region 65 can accurately be positioned on this dielectric substrate 61.Each crystal region 65 comprises that a plurality of devices form district 54.Alignment mark 64 also can be used in the processing step of Production Example such as thin-film transistor, for example forms the step on the island 22 shown in Fig. 1 D.And alignment mark 64 can be used for cutting and the step that is connected substrate.
Fig. 7 illustrates the embodiment of the crystallization apparatus 70 that can be used for the crystallization of semiconductor film according to the present invention.In this example, excimer laser 71 (for example XeCl, KrF etc.) is as lasing light emitter.Yet lasing light emitter is not limited to this excimer laser.As shown in Figure 7, on the emitting side of the excimer laser 71 of emission pulse laser bundle 72, be provided for successively controlling laser beam 72 energy density attenuator 73 and be used for the homogenizing optical system 74 of homogenizing laser beam intensity.Attenuator 73 and homogenizing optical system 74 are common attenuator and homogenizing optical systems of using in traditional optical device.
Alignment mark forms mask or phase shifter 75, and perhaps phase shifter 76 is arranged on the emitting side of homogenizing optical system 74.First irradiation (usually several times) that utilizes alignment mark to form mask or phase shifter 75 utilizes second irradiation (usually several times) of phase shifter 76 afterwards.Usually the travel mechanism 84 that is used to displacement elements can be as form the mechanism that replaces between mask or phase shifter 75 and the phase shifter 76 at alignment mark.By this travel mechanism 84, change alignment mark and form mask or phase shifter 75 and phase shifter 76.The laser beam pattern that forms mask or phase shifter 75 or phase shifter 76 formation by alignment mark sees through projecting lens 77, and size constancy or size reduce or increase.
XY platform 78 that can move on perpendicular to the direction of the laser beam direction of propagation or XYZ θ platform 78 (can move and can rotate with required angle the platform of the substrate in the XY plane on the X that is perpendicular to one another, Y and Z direction) are arranged on the emitting side of projecting lens 77.The dielectric substrate 80 that forms semiconductive thin film 79 on it will be placed on XYZ θ platform 78 grades.This XYZ θ platform 78 is connected to driver 81 and moves on perpendicular to the direction of beam direction by driver 81.On XYZ θ platform 78, be provided for detecting at least the light receiving element 82 of the position of the alignment mark 64 that on semiconductive thin film 79, forms.
This excimer laser 71, attenuator 73, be used for travel mechanism 84, driver 81 and light receiving element 82 that alignment mark forms mask or phase shifter 75 or phase shifter 76 and be electrically connected to controller 83 by holding wire 87.Controller 83 controls are from the signal of element 71,73,84,81 and 82.Controller 83 comprises signal processor 85 and memory cell 86, the control signal that this signal processor 85 producing components 71,73,84,81 and 82 are required, and memory cell 86 storage assemblies are handled required information and program.
Controller 83 comprises program, this program makes it possible to form alignment mark by the precalculated position of first laser radiation on amorphous or polycrystal semiconductor film at least, and by adopting second irradiation according to the aligning of alignment mark to form the territory, recrystallization zone with big crystallite dimension.Controller 83 can be carried out the required various controls of crystallization apparatus again, comprise the light emission control of the excimer laser 71 of emission pulse laser bundle, in first irradiation and second irradiation attenuator 73 energy density control, utilize mask/phase shifter displacement control of mask/phase shifter travel mechanism 84, by means of the drive controlling of 81 couples of XYZ θ of driver platform 78 and by means of the position detection control of 82 pairs of alignment marks 64 of light receiving element and semiconductive thin film 79.
Fig. 8 A and Fig. 8 B illustrate the embodiment of the LCD of utilizing the manufacturing of crystalline semiconductor film again with the alignment mark that is formed in the semiconductive thin film.Reference numeral 102 is illustrated in the alignment mark that forms on the signal-line driving circuit part 100 that LCD 90 tops provide.Reference numeral 102 ' is illustrated in the alignment mark that forms on the downside display part 119.The nmosfet formation region that forms district 54 corresponding to device shown in Figure 6 is represented with numeral 103 and 103 '.For the purpose of simplifying the description, only show upper right portion, remainder omits.In the present embodiment, alignment mark is positioned at four corners of driving circuit section and display part.Yet the quantity of alignment mark and arrangement can suitably be determined according to the quantity and the arrangement of nmosfet formation region.
Shown in Fig. 8 B, LCD 90 comprises a pair of up and down transparent substrates 91 and 92, liquid crystal layer 93, a plurality of pixel electrode 94 and to electrode 97.In addition, shown in Fig. 8 A, LCD 90 comprises a plurality of pixel electrodes 94, multi-strip scanning line 95, many signal line 96 that is arranged to matrix and a plurality of thin-film transistors 98 that are connected to pixel electrode 94.
Paired transparent substrates 91 and 92 can be formed by for example glass substrate. Transparent substrates 91 and 92 is connected to each other by frame shape encapsulant 118.Liquid crystal layer 93 be sealed in by paired transparent substrates 91 and 92 and encapsulant 118 region surrounded in.
On the inner surface of one of paired transparent substrates 91 and 92, for example, on the inner surface of lower substrate 92, be provided at and be arranged to a plurality of pixel electrodes 94 of matrix form, multi-strip scanning line 95 and the holding wire 96 that is connected to a plurality of thin-film transistors 98 of relevant pixel electrode 94 and is electrically connected to thin-film transistor 98 on horizontal and vertical.In the present embodiment, thin-film transistor 98 and pixel electrode 94 be formed on again crystallizer form the zone 103 and 103 ' on.
Scan line 95 horizontal expansions also are connected to the grid of thin-film transistor 98.One end of scan line 95 is connected to scan line drive circuit 99.Holding wire 96 longitudinal extensions also are connected to thin-film transistor 98.One end of holding wire 96 is connected to signal-line driving circuit 100.Scan line drive circuit 99 and signal-line driving circuit 100 are connected to liquid-crystal controller 101.Liquid-crystal controller 101 receives picture signal and synchronizing signal from the outside, and produces pixel video signal Vpix, vertical scanning control signal YCT and horizontal sweep control signal XCT.
In the embodiment shown in Fig. 8 A and the 8B, the semiconductor film that has wherein formed thin-film transistor 98 is arranged on the transparent substrates 92, and alignment mark 102,102 ' is formed on precalculated position on the semiconductor film by first laser radiation.Discern alignment mark 102,102 ' optically, and determine to come the position of crystallization by the phase modulated excimer laser beam with reference to alignment mark 102,102 '.For example, shown in Fig. 3 D, thin-film transistor 98 is formed on corresponding to device and forms in the nmosfet formation region 103,103 ' in district 54.Thin-film transistor 98 can form by traditional thin-film transistor manufacturing process.
Second embodiment
Below, describe second embodiment in detail.In a second embodiment, for example, shown in Figure 12 A, utilize phase value modulation type mask pattern MK, the alignment mark that on the semiconductor film on the substrate, is formed for aiming at.Below the technology that illustrates is applicable to the purposes except forming alignment mark.
The schematically illustrated example that is applicable to the crystallization apparatus that forms the alignment mark among second embodiment of Figure 10.The laser beam that uses in crystallization apparatus shown in Figure 10 has for example wavelength of 248nm, to be used to heat the non-single crystal semiconductor film that forms on substrate 206.This crystallization apparatus can comprise for example KrF excimer laser 201, and this KrF excimer laser 201 can be exported the laser beam of the illuminated portion that can melt non-single crystal semiconductor film.As another example, can use the YAG laser as light source.And, can use the XeCl laser as exporting the light source that can heat and melt the energy of this non-single crystal semiconductor film.
From the laser beam process lamp optical system 202 of light source 201, thereby can make even basically perpendicular to the light intensity in the irradiated plane of beam direction.
Lamp optical system 202 comprises the homogenizer (not shown).This homogenizer makes the light intensity homogenizing of incoming laser beam in irradiated plane.
The laser beam that is incident on the phase modulation component 203 has the predetermined strength distribution by phase modulation component 203 in irradiated plane.The light beam that generates enters image focusing optical system 204.The beam convergence that passes image focusing optical system 204 is on the pending substrate 206 that remains on the platform 205.Substrate 206 usefulness that remain on the platform 205 have the laser beam irradiation that predetermined strength distributes by phase modulation component 203, thus fusing and the lip-deep semiconductor film of crystalline substrate again.
Platform 205 can be along the freely mobile substrate 206 of exposure plane under the control of for example XYZ θ controller 207.Here, exposure plane is defined as the plane from the illumination light focusing of image focusing optical system 204.Therefore, can be radiated at desired location on the substrate 206 from the illumination light with light distribution of phase modulation component 203.Therefore, can be with the predetermined pattern of preset space length irradiation according to the size qualification of phase modulation component 203.
Though the back will illustrate details with reference to Figure 27, can construct substrate 206, make non-single crystal semiconductor film 282 and coverlay 283 be stacked on dielectric substrate 280 for example on the glass substrate by bottom protective film 281.Bottom protective film prevents the diffusion of impurities from glass substrate.In addition, bottom protective film has the effect that absorbs and accumulate in the heat that produces when melting non-single crystal semiconductor film.For example, silicon oxide film or organic sog film can be used as bottom protective film.Semiconductor device for example semiconductor active device and semiconductor passive device is formed in the non-single crystal semiconductor film.This non-single crystal semiconductor film is meant amorphous semiconductor film or polycrystal semiconductor film.The material of available non-single crystal semiconductor film comprises for example SiGe, Si0, CdSe, Te and CdS and silicon.Coverlay is formed by the materials with function with the heat that absorbs and produce when gathering the fusing non-single crystal semiconductor film.For example, silicon oxide film can be used as coverlay.
Figure 11 illustrates the example of the indicia patterns that is applicable to crystallization apparatus shown in Figure 10.In example shown in Figure 11, can be set at predetermined from the light intensity of the light emitted that is used for crystallization than low value, to form alignment mark.
Indicia patterns MK provide phase delay mainly can for the transmitted light in the desired zone unit, i.e. phase difference distributes thereby this light has predetermined strength under light focuses on state on the image focusing object.Selectable, indicia patterns MK mainly can make the transmitted light in the desired zone unit that the difference of light transmission capacity is arranged, and distributes thereby this light has predetermined strength under light focuses on state on the image focusing object.Indicia patterns MK can form mesh shape or point-like.
In a second embodiment, for example, form the substrate of phase modulation component 203, provide thickness difference (being the step part) to form indicia patterns MK thus by etching selectively.Quartz glass is the preferred material of the substrate of phase modulation component 203.Can make the glass material of phase modulation component 203, preferred quartz glass have step and partly form indicia patterns MK by machinery or chemical treatment.Indicia patterns MK can also carry out patterning and forms by will be pre-formed light transmissive material film on the phase modulation component substrate with reservation shape.At indicia patterns MK is under the situation of light transmissive material film, for example, and the thickness by controlling this film or by changing the shared area of this film, the light distribution that can obtain to be scheduled to.
Figure 12 A is the schematic diagram of the feature of phase modulation component when being used to explain that indicia patterns MK wherein shown in Figure 11 and phase modulating part branch form as one to 12C.Figure 12 A is the plane graph of schematically illustrated whole phase modulation component when forming as one wherein as with reference to the described indicia patterns MK of Figure 11 and phase modulating part branch.Figure 12 B and Figure 12 C illustrate the light distribution that obtains when light passes on the phase modulation component as the represented position of the line B-B among Figure 12 A and line C-C respectively.
Ordinate in each width of cloth curve chart of Figure 12 B and Figure 12 C is represented light intensity, this light intensity is with in the pattern that wherein big crystallite dimension Si crystal is grown in a predetermined direction, at the a-Si film, promptly can carry out crystal growth in the semiconductor film and the maximum stream flow I1 that can not ablate is that standardization is carried out on the basis.
In Figure 12 C, be " β " and " γ " if pass the standardized light intensity of indicia patterns MK, the size of " β " and " γ " is expressed as follows
1>γ>β，
Because carrying out mark with the flow that is used for crystallization forms.
In fact, consider that the tolerance of the variation of distance between the thickness offset of varied in thickness about a-Si layer on the irradiation object, irradiation object or irradiation object and the illuminating optical system sets the value of " γ ".In other words, the light intensity higher limit γ that is radiated on the indicia patterns MK part must be set at the value that can prevent that following situation from taking place, this situation is that above-mentioned ablation takes place, and will lose according to the alignment mark that indicia patterns MK is formed on the semiconductor film on the substrate.In the zone of ablating took place, the accuracy (possibility that the indicia patterns MK of formation retains) of identification alignment mark reduced.
Simultaneously, a-Si (amorphous silicon) and p-Si (polysilicon), perhaps c-Si (silicon metal) has different refractive indexes, therefore can optical identification.In other words, for the identification mark pattern, must form the indicia patterns in a-Si zone and p-Si zone or c-Si zone.If it is " α " that semiconductor film to be crystallized begins the light intensity (that is, change crystal structure required light intensity) of crystallization place, " β " and " γ " formula that must meet the following conditions then,
γ>α>β …(A)
In order to realize beneficial effect of the present invention more satisfactorily, preferably, lower limit β in the condition formula (A) and higher limit γ are set at optimum value according to wavelength, light intensity, semiconductor film structure and the light distribution used.
Irradiation object is a substrate 206, constructs this substrate 206, makes the SiO that 300nm is thick 2Layer (following insulating barrier) is formed on the glass plate that for example 0.7mm is thick, and thick a-Si layer of 200nm and the thick SiO of 300nm are provided thereon 2Layer (going up insulating barrier).Supposition now is 248nm (a KrF excimer laser beam) from the light wavelength λ of the light source of crystallization apparatus shown in Figure 10.In addition, the subject side numerical aperture of supposing (equal) multiplication factor optical systems such as image focusing optical system 204 is and image focusing optical system 204 is 0.031.And the numerical aperture NA of image focusing optical system 204 is set at 0.0155, so the sigma of illuminator can become 0.5.Suppose that phase modulation component 203 has 180 ° of phase differences.
Result of the test under these conditions is described.(wavelength: 248nm) irradiation has the object 206 of above-mentioned a-Si film, changes intensity simultaneously with excimer laser beam.When the peak value of the excimer laser beam with the flow that is used for crystallization surpasses 1000mJ/cm 2The time, ablate (film damage).Therefore think that a-Si and p-Si lose.On the other hand, be equal to or less than 200mJ/cm when light intensity 2The time, confirm crystallization does not take place, and a-Si film or a-Si on the glass substrate.
Therefore confirm, when light intensity is higher than 200mJ/cm 2And be not higher than 1000mJ/cm 2The time, the semiconductor film on the glass substrate becomes p-Si (polysilicon or polycrystalline) or c-Si (silicon metal).
Therefore, in the phase modulation pattern of big crystallite dimension Si crystal that is being used for growing, if the standard of luminous intensity of laser beam turns to " 1 " when taking place to ablate, then the critical value " α " that begins crystallization of the a-Si film on the glass substrate can be expressed as
α＝0.2。
In this case, the relation table between " β " and " γ " is shown
γ>0.2>β。
Figure 13 A is the view that is used for interpretation principle to 13D, according to this principle, is that light intensity on the process object can change by the image focusing irradiation optical system at substrate.Usually, the light amplitude distribution U of the image that focuses on of phase modulation component 203 (x y) is expressed as equation (B):
U(x，y)＝T(x，y)*ASF(x，y) ...(B)
In equation (B), T (x is that the complex amplitude light transmittance of phase modulation component 203 distributes y), and * represents convolution (convolution integral), and ASF (x y) is the point spread function of image focusing optical system 204.Point spread function is defined as the dot image distribution of amplitudes in the image focusing optical system.
Because amplitude is even, so the complex amplitude light transmittance distribution T of phase modulation component 203 is expressed as following equation (C),
T＝T 0e iφ(x，y) …(C)
In equation (C), T 0Be constant, φ (x, y) expression PHASE DISTRIBUTION.
Have uniform circular unthreaded hole and do not have under the situation of aberration in image focusing optical system 204, about point spread function ASF (x y) sets up following formula (D),
ASF(x，y)∝?2J 1(2π/λ·NA·r)/(2π/λ·NA·r) …(D)
R=(x wherein 2+ y 2) 1/2
In formula (D), J 1Be Bessel function, λ is a light wavelength, and NA is the image-side numerical aperture of image focusing optical system as mentioned above 204.
More specifically, the point spread function of image focusing optical system 204 shown in Figure 13 A is the light distribution on the picture plane 204f of pending substrate 206.This light distribution is shown in Figure 13 B.In Figure 13 B, abscissa is represented the plane of incidence of substrate 206, and ordinate is represented incident intensity.
In other words, the diameter that can represent with dotted line among Figure 13 B of the point spread function of image focusing optical system 204 shown in Figure 13 A is that the cylindrical 204e of R is similar to.Therefore, diameter is the complex amplitude on the picture plane 204f shown in integral result decision Figure 13 A of the inner COMPLEX AMPLITUDE of circle of R ' (on the optics corresponding to the diameter R among Figure 13 B) on phase modulation component 203 shown in Figure 13 C.
As mentioned above, the light amplitude that focuses on as the formation image on the 204f of plane is that light intensity is drawn by the complex amplitude light transmittance distribution of phase modulation component 203 and the convolution of point spread function.
Consider the situation that point spread function is similar to by cylindrical 204e.In this case, the complex amplitude light transmittance of phase modulation component 203 carries out integration with the inner even weight of circular some spreading range R ' shown in Figure 13 C.The result of integration is the complex amplitude of picture on the 204f of plane, and its absolute value square is light intensity.
The point spreading range R of image focusing optical system 204 is restricted portions between the intersection point 204j of amplitude curve and abscissa 204i in Figure 13 B.
Therefore, along with a phase change of spreading range R inside diminishes, light intensity increases.On the contrary, along with phase change becomes big, light intensity reduces.Shown in Figure 13 D,, will be more readily understood above-mentioned situation if consider the summation of the inner phase vectors 204h of unit circle 204g.
Figure 14 A is the schematic diagram that is used to explain as with reference to figure 13A relation between phase change and the light intensity in described some spreading range R of 13D to Figure 14 C.
The phase value that Figure 14 A illustrates four zones all is 0 ° a situation.Each summation that has four phase vectors 205g of amplitude E on 0 ° of direction is amplitude 204E, and its square is corresponding with light intensity 16I.The phase value that Figure 14 B illustrates two zones all is 0 °, the phase value in two zones is situations of 90 ° in addition.The summation of two phase vectors on 0 ° of direction and two phase vectors on 90 ° of directions with Correspondence, and its square is corresponding with light intensity 8I.
The phase value that Figure 14 C illustrates a zone is that 0 °, another regional phase value are 90 °, to also have another regional phase value be that 180 °, the phase value in a remaining zone are 270 ° situations.At the phase vectors 205s on 0 ° of direction, at the phase vectors 205t on 90 ° of directions, in the summation of phase vectors 205u on 180 ° of directions and the phase vectors 205v on 270 ° of directions is OE, and its square is corresponding with OI.
Figure 15 A and Figure 15 B are used for the unthreaded hole function of interpretation of images Focused Optical system 204 and the view of the relation between the point spread function.Figure 15 A illustrates the relation between unthreaded hole function and the light transmittance.Figure 15 B illustrates the relation between point spread function and the unthreaded hole function.Usually, point spread function (Figure 15 B) is to obtain by Fourier transform unthreaded hole function (Figure 15 A).Particularly, have uniform circular unthreaded hole and do not have under the situation of aberration in image focusing optical system 204, (x y) is represented by above-mentioned formula (D) point spread function ASF.
Have uniform circular unthreaded hole and do not have under the situation of aberration in image focusing optical system 204, the known point spread function get for the first time central area before the point of 0 value (that is, Airy disc) radius R/2 are expressed as equation (E),
R/2＝0.61λ/NA …(E)
In the present invention, shown in Figure 14 B and Figure 15 B, some spreading range R is meant the circular central region before point spread function F (x) gets 0 value for the first time.Consider now as Figure 14 A to shown in Figure 14 C, optically comprise the situation of a plurality of (is four at Figure 14 A) phase modulation unit in the circle corresponding in 14C with the some spreading range R of image focusing optical system.In this case, simply calculate, can control light amplitude, i.e. light intensity with analyzing by summation according to a plurality of phase vectors 205g.Thus, even can relatively easily obtain the light distribution of relative complex.
Therefore, in the present invention, in order freely to control light intensity, the phase modulation unit of necessary is phase modulation component 203 is optically less than the radius of the some spreading range R (referring to Figure 13 B) of image focusing optical system 204, i.e. R/2.In other words, necessary is, with regard to the image focusing plane (predetermined plane) of the image focusing optical system of image focusing optical system 204 image-side, based on the PHASE DISTRIBUTION size of the phase modulation unit of phase modulation component 203 radius R/2 less than the some spreading range R of image focusing optical system 204.Unit scope C shown in Figure 12 A is substantially equal to the size with reference to the some spreading range R of figure 13B explanation.
The mask pattern MK with reference to Figure 11 explanation be regional area (duty ratio) D of unit change with 1 district (1 unit), to change its phase value and phase difference, as Figure 16 A to shown in the 16C.Therefore, will can freely set transmitted intensity with reference to Figure 17 explanation as the back.If as an example referring to Figure 16 B, form the constant part of phase value or the part of the first phase value φ 2 is provided by the line Lp that intersects vertically.Therefore, have the part of out of phase value, the part that promptly has the second phase value φ 1 is formed in the Dp.Needless to say, have the part of the first phase value φ 2 and have the part of the second phase value φ 1 can be opposite.And the area that the phase value in per 1 district changes can freely be set.Figure 16 A illustrates wherein that duty ratio D is approximately 5% example, and Figure 16 B illustrates wherein that duty ratio D is approximately 50% example, and duty ratio D is approximately 90% example and Figure 16 C illustrates wherein.
Figure 17 illustrates the shared area in each light transmission part in (Unit 1) than (abscissa among Figure 17), and described light transmission part is a pair ofly in the phase modulation component with reference to Figure 11 and Figure 12 A explanation to have the part of first phase value and have the part of second phase value.That is to say that Figure 17 illustrates as Figure 16 A to the variation of the area ratio in the zone that has the out of phase value shown in the 16C be radiated at relation between the light intensity (%) on the substrate.
Can clearly be seen that from Figure 17, pass the light intensity of phase modulation component 203 and can recently freely set by changing the area that in the phase modulated zone of 1 unit of phase modulation component 203, has the part of first phase value and have between the part of second phase value.The size in the phase modulated zone of 1 unit is decided by the size with reference to Figure 11 and the described unit of Figure 12 A scope C.
As the front illustrated, the size of unit scope C is decided by the NA and the light source 201 wavelength of light emitted λ of the lens (lamp optical system 202) of crystallization apparatus.Have in the phase modulated zone of 1 unit that forms phase modulation component 203 under the situation of the part of first phase value and the part with second phase value, unit scope C (referring to Figure 11 and Figure 12 A) must be set at and be less than or equal to λ/NA.
Can clearly be seen that from Figure 17, be set at phase difference under any situation of θ=60 ° (perhaps 300 °), θ=90 ° (perhaps 270 °), θ=120 ° (perhaps 240 °) and θ=180 °, as with reference to figure 16A as described in Figure 17 C, when duty ratio D took maximum by force in 50% time, and in the scope of duty ratio D between 0% and 50%, light intensity descends gradually.On the other hand, confirm that light intensity increases gradually in the scope of duty ratio D between 50% and 100%.
This variation of light intensity can explain with following equation (F),
I＝(2-2cos?θ)D 2-(2-2cos?θ)D+1 …(F)
Wherein I is a light intensity, and θ is a phase difference, and D is duty ratio (has between the zone of out of phase value area than).
Therefore, when on utilizing the semiconductor film of phase value modulation type mask pattern MK on substrate, forming alignment mark, the best light intensity of light of exposure is according to the factor on semiconductor film one side, and for example the composition of substrate semiconductor-on-insulator film, thickness or the like and the phase difference and the duty ratio D thereof that give mask pattern MK arbitrarily set.
The 3rd embodiment
Below, the embodiment of light transmission capacity modulation type is described, indicia patterns MK wherein, the metal material that for example can hinder light (blocking light) is arranged on the glass substrate with preset width (area) and spacing (at interval).
Figure 18 flag activation pattern MK is applied to the situation of the method except the method for above-mentioned change phase value.In the 3rd implements, utilize resistance light type mask pattern MK on the semiconductor film on the substrate, to form alignment mark.Below the technology that illustrates is applicable to the purposes except forming alignment mark.
The metallic film of resistance light is provided in this case, selectively.Therefore, per 1 district (Unit 1) is set and has the shield portions PS (perhaps Pt) of predetermined area and shield portions (being the light transmission part) Ss (perhaps St) not.For example,,, in each 1 district (Unit 1), change and suppress light transmissive region area, i.e. shield portions Ps (perhaps Pt) and the not ratio between the shield portions Ss (perhaps St) to shown in the 19C as Figure 19 A.By this method, as will can freely setting the light intensity that passes indicia patterns MK with reference to Figure 20 explanation.Needless to say, can at random make not shield portions and shield portions according to the method that metallic film is provided selectively.
For example, with reference to figure 19B, if form not shield portions with the interval Ss that intersects vertically, shield portions Ps just forms point-like.If be provided at the strip metal film St that extends on the right angle orientation, shield portions Pt does not just form point-like.Because transmission part and shield portions have opposite pattern, as long as consider the area ratio, the number of types of indicia patterns MK is exactly two.
Specifically, to shown in the 19C, area is set at the duty ratio D of per Unit 1 (as described in earlier in respect of figures 11 and Figure 12 A, comprise about 4 to 9 districts and corresponding to unit scope C) than i.e. (shield portions area/1 cellar area) as Figure 19 A.Thus, as will can freely setting the light intensity of the indicia patterns MK that passes phase modulation component with reference to Figure 20 explanation.Figure 19 A illustrates duty ratio D be approximately 0% situation of (transmission or do not hinder light) fully, and Figure 19 B illustrates duty ratio D and is approximately 50% situation, and Figure 19 C illustrates the situation that duty ratio D is approximately 100% (hindering light fully).
Figure 20 is used for explaining for example providing with reference to figure 19A to the described resistance light of 19C metallic film, and the ratio between change shield portions and the non-shield portions, promptly passes the curve chart of the light intensity variation of phase modulation component 203 under the situation of duty ratio D.Unit 1 not size of shield portions is decided by the size with reference to Figure 11 and the described unit of Figure 12 A scope C.In addition, the size of unit scope C is by the NA and the light source 201 wavelength of light emitted λ decision of the lens (lamp optical system 202) of crystallization apparatus.This has illustrated in the above.
Can clearly be seen that from Figure 20, be set at duty ratio D under any situation of D=0% (transmission fully), D=50% and D=100% (hindering light fully), when duty ratio D is 100%, light intensity is got maximum, and from duty ratio is 0% (transmission fully), and light intensity descends gradually.
This variation of light intensity can explain with following equation (G),
I＝(1-D) 2＝D 2-2D+1 …(G)
Wherein I is a light intensity, and D is duty ratio (shielded area/transmission (not blocking) area).
Therefore, when on utilizing the semiconductor film of resistance light type mask pattern MK on substrate, forming alignment mark, the light intensity of the best of the light of exposure is according to the factor of semiconductor film the side for example composition, thickness or the like of the semiconductor film on the substrate and ratio (duty ratio) D of mask pattern MK, and promptly (shielded area/transmission area) arbitrarily set.
The strong measurement result that changes in Mingguang City with reference now to Figure 21 A and Figure 21 B, this light intensity can provide the light transmission capacity modulation type pattern of predetermined light intensity to change by utilizing as reference Figure 18 and Figure 19 A as described in 19C.
For example, for the big crystallite dimension monocrystalline silicon crystal grain of growing, for example need approximately 1J/cm 2Flow (irradiates light).Yet, shown in Figure 21 B, when pattern does not comprise the zone that is used to change phase value and only comprises the regional 209b of complete transmission, as the curve among Figure 22 bShown in, 1J/cm 2The light direct irradiation of flow is on semiconductor film.Therefore, above-mentioned ablation taking place, and is difficult to form the pattern that can be used as alignment mark identification.
On the contrary, shown in Figure 21 A,, can at random set light transmission capacity, i.e. light intensity on transmission region 209b by the regional 209a that can change the resistance light area with predetermined ratio (area ratio) is provided.About the pattern shown in Figure 21 A, confirm by simulation, when duty ratio (not shield portions area/gross area) for example is set at 40% and 1J/cm 2When the light transmission capacity of flow is standardized as " 1 ", as the curve among Figure 22 aShown in, light intensity becomes about 60%.
Figure 23 A and Figure 23 B are the principles that illustrates according to reference to figure 21A and 21B and Figure 22 explanation, use 1J/cm in identical manufacturing step 2The enlarged photograph of the result's who obtains in the time of on the semiconductor film of the rayed of flow on same substrate example.
Figure 23 A illustrates the situation of the light that utilizes the patterned illumination predetermined strength, and this pattern has the zone that phase modulation component was scheduled to and was used as to phase value, and can be predetermined strength with the flow restriction of irradiates light.In this case, find that going up existence at substrate (test piece) contrasts difference (difference in contrast) accordingly with master pattern.
On the other hand, Figure 23 B illustrates the situation of utilizing non-intersity limitation pattern promptly not go up the light of irradiation predetermined strength in same substrate (test piece) as the pattern of phase modulation component in identical manufacturing step.Shown in Figure 23 B, the semiconductor film on the substrate looks deceives, and original pattern can not be discerned.Have reason to think and ablation (film damage) has taken place in the semiconductor film on substrate.
Figure 24 is the enlarged drawing of the regional A among Figure 23 A.In Figure 24, the boundary member that the core that the color density on the background changes changes corresponding to the color density on the background among Figure 23 A.And, can clearly be seen that from Figure 24 the pattern that forms has the pitch of 3 μ m on the semiconductor film on the substrate, and or even the pattern that can be used as alignment mark also have enough resolution.
Figure 25 illustrates by known lithographic equipment and detects the testing result that obtains when utilizing pattern shown in Figure 23 A to be formed on mark on the semiconductor film on the substrate.As can be seen from Figure 25, can be similar to the input of the situation of aim detecting in the common lithographic equipment step.
In brief, by using above-mentioned principle of the present invention (promptly, can at random set the irradiation light intensity of transmission or the pattern of phase value than changing based on area for example by utilizing), under the situation that does not cause ablation, the big crystallite dimension monocrystalline silicon crystal grain and on the semiconductor film on the substrate, form alignment mark and become possibility of growing.
As mentioned above, by using optical modulation element according to the second and the 3rd embodiment, distribute the rayed of (predetermined amount of flow) on the semiconductor film on the substrate when having predetermined strength, and during the growing semiconductor crystal of semiconductor film, can in the step identical, form spendable alignment mark in the subsequent step with making oarse-grained crystallization processes.
For example, when forming semiconductor active device or the like on the relevant grown crystal zone of semiconductor film, this helps to aim at.Be incorporated into the position of the indicia patterns of phase modulation component by change, can form alignment mark in the desired location on will the semiconductor film of grown crystal.In the present invention, even alignment mark is arranged on the desired location on the semiconductor film on the substrate, the characteristic of the semiconductor active device that will form or the like is not had side effect yet in manufacturing step subsequently.
Optical modulation element shown among the second and the 3rd embodiment each all comprises two or more light modulated and the intensity modulation zone of predetermined light distribution is provided.At least a intensity modulation zone is made up of two kinds of basic pattern.First basic pattern is characterised in that and comprises one group of resistance light zone and transmission region.Second basic pattern is characterised in that and only comprises resistance light zone, perhaps comprises one group of resistance light zone and transmission region, and the area that wherein hinders the light zone is than the area ratio greater than resistance light zone in first basic pattern.
This structure can be described as the shield portions Ps (Pt) of the every indicia patterns MK (3) shown in Figure 18 and the 19A-19C and not shield portions or regional transmission Ss (St), and the optical modulation element 203 that wherein integrally forms indicia patterns MK.
In addition, be characterised in that according to the optical modulation element of the second and the 3rd embodiment and comprise two or more intensity modulation zones, wherein at least a intensity modulation zone comprises first basic pattern and second basic pattern, this first basic pattern comprises one group of two or more phase modulated zone with out of phase modulation value, this second basic pattern only comprises the zone with single phase value, and perhaps its area is than one group of two or more the phase modulated zone that is different from the first basic pattern area ratio.
This structure can be described as Figure 11 and Figure 16 A first phase value φ 1 (perhaps Dp) and the second phase value φ 2 (perhaps Lp) to the every indicia patterns MK (3) shown in the 16C, and the optical modulation element 203 that wherein integrally forms indicia patterns MK.
Method according to the second and the 3rd embodiment is a kind of method for crystallising, the illumination that is used for having two or more light distribution is mapped to non-single crystal semiconductor film and this non-single crystal semiconductor film of crystallization, in the first and second light distribution zones that are used for providing two or more light distribution, the second light distribution zone is made up of two kinds of zones with different light intensity, and set up following relation
I 1>I 2>I 3
Wherein, I 1Be the light intensity maximum in the first light distribution zone, and I 2And I 3Be respectively the high-value and the low-value of the light intensity in the second light distribution zone.
When the minimum intensity of light when taking place to ablate in non-single crystal semiconductor film owing to the irradiation of the light with even light distribution is Ia, set up following relation,
I a>I 2>I 3。
On the other hand, when the minimum intensity of light when non-single crystal semiconductor film melts owing to the irradiation of the light with even light distribution is Ic, set up following relation,
I 2>I c>I 3。
The 4th embodiment
Figure 27 A is that explanation is utilizing the described crystallization apparatus that can form alignment mark of the second and the 3rd embodiment to come to form in the zone of crystallization for example sectional view of the step of semiconductor active device of electronic device to 27F.
Shown in Figure 27 A, the dielectric substrate 280 of preparation example such as alkali glass, quartz glass, plastics or polyimides.On dielectric substrate 280, form underlying membrane 281, amorphous semiconductor film 282 and coverlay 283 by CVD or sputter.For example, underlying membrane 281 is by 50nm thick SiN or the thick SiO of 100nm 2Stack layer form.For example, amorphous semiconductor film 282 is formed to the thick Si of 200nm, Ge or SiGe by for example about 50nm.For example, coverlay 283 is by SiO 2, SiON, SiO xPerhaps SiN forms.
Then, for example the laser beam E of KrF excimer laser beam or XeCl excimer laser beam is radiated on the some or all of surface of amorphous semiconductor film 282 and coverlay 283 by phase modulation component 203, for example, be radiated on the presumptive area, as described in reference to illustrational Figure 12 A, on this phase modulation component 203, integrally form indicia patterns MK.
As shown in figure 26, for example, phase modulator 203 has the indicia patterns MK that is used to aim at, and has the phase shift pattern SP that is used for impelling at the substrate 206 as process object crystal growth.
12A is described as earlier in respect of figures, and phase modulation component 203 comprises Xian ﹠amp; Intermittent pattern 230, this Xian ﹠amp; Intermittent pattern 230 comprises line part 231 and compartment 232, and its width is optically littler than the diameter of the some spreading range (circle C represents among Figure 12 A) of above-mentioned image focusing optical system 204.Usually, when using term " Xian ﹠amp simply; Intermittent pattern " time, it is meant a pair of regional transmission and regional transmission not.In this manual, the circulation of two kinds of outs of phase is called as " Xian ﹠amp; Intermittent pattern ".
In Figure 12 A, each line part 231 (using shadow representation) has the first phase value φ 1 (for example 0 °).Each compartment 232 that is expressed as shadeless blank has the second phase value φ 2 (for example 180 °).Width between adjacent lines part 231 and compartment 232 is than changing on the direction of arrow x.That is, when part with to have the part of the second phase value φ 2 paired, and when having indicated spacing, has the shared area of the part of the first phase value φ 1 than on the direction of arrow x, changing with first phase value φ 1.
Phase modulation component 203 shown in Figure 12 A has this PHASE DISTRIBUTION, that is, as the line part 231 of first area and all different in each position as the ratio of area occupied between the compartment 232 of second area with phase value φ 2 with phase value φ 1.
As mentioned above, by suitably changing the line part 231 that comprises in the unit scope C and the ratio of compartment 232 area occupied, this unit scope C is optically corresponding to the some spreading range of image focusing optical system 204, and the light distribution on the substrate 206 may be controlled to has predetermined value.
Particularly, shown in Figure 12 A, form Xian ﹠amp; Intermittent pattern 230 makes that the central area on vertically (arrow x) is set at the first phase value φ 1 (0 °) basically, and the ratio with area of the second phase value φ 2 (180 °) increases gradually towards two ends on arrow x direction.
The incident light that (that is, from the paper front of Figure 12 B to the direction at the back side) passes phase modulation component 203 on arrow z direction passes Xian ﹠amp shown in Figure 12 B when it; Has largest light intensity during the center 230A of intermittent pattern 230.On the other hand, the incident light that passes the end positions 230B of phase modulation component 203 has minimum intensity of light.
Have the phase modulation component 203 of changing patterns shown in Figure 12 A by use, obtaining V-shaped part and inverted V-shaped part becomes possibility in the light distribution that vertically (arrow x) goes up this crenellation pattern of alternately arranging.In this case, passing the peak value that light intensity is provided on phase modulation component 203 near the light of center 230A on the direction of arrow x.
As mentioned above, utilize the phase modulation component 203 shown in Figure 12 A, can obtain the intensity distributions pattern shown in Figure 12 B, i.e. the minimum of light distribution is arranged on the precalculated position, and intensity increases towards the marginal portion gradually from this minimum.Utilization has the light of this intensity distributions pattern, can be along the in-plane (x direction) of substrate 206 from seeded growth (cross growth) big crystallite dimension crystal.Therefore, can form the crystal semiconductor film of big crystallite dimension.
Particularly, in sag vertical curve type distribution patterns, wherein the V-arrangement pattern light distribution of light intensity linear increase towards the marginal portion provides the linear temperature gradient towards the marginal portion.Therefore, under the situation that does not interrupt crystal growth, can make and have the more crystal semiconductor film of coarsegrain.Shown in Figure 12 B, there is not to produce light distribution with unnecessary erratic behavior.Therefore, have the light distribution of above-mentioned pattern, can generate crystal grain with the array of high fill-ratio by utilization.
Set the center of phase modulation component and the length between the end and be in the back of the step 5 μ m are arranged in to(for) the pitch with 10 μ m the electronic device (semiconductor active device) that will make for example TFT (thin-film transistor) be useful.
On the other hand, the light intensity of passing the phase modulation component 203 that comprises indicia patterns MK zone is a predetermined value in the set positions corresponding to indicia patterns MK, and shown in Figure 12 C, so mark is formed on the pending substrate.At this moment, if indicia patterns MK is a phase modulation-type, the light intensity that then will pass indicia patterns MK is set at reference to figure 16A to Figure 16 C, Figure 17 and the described level of formula (F).In addition, if indicia patterns MK is the intensity modulation type, promptly hinder the light type, the light intensity that then will pass indicia patterns MK is set at reference to figure 19A to Figure 19 C, Figure 20 and the described value of formula (G).
Indicia patterns MK should preferably be formed on this given position, thereby the characteristic of the semiconductor active device that will form in manufacturing step subsequently etc. is not had side effects.Therefore wish to be formed on except on the position the upper/lower positions at the indicia patterns MK that provides on the phase modulation component shown in Figure 26 203, promptly except the position the position of the seed crystal that on the pending glass substrate 206 generation is used for crystal growth, perhaps be formed on the position except following scope, this scope begins to extend and corresponding to forming for example zone of TFT (thin-film transistor) of active device from the seed crystal as the center.In this case, in the zone that does not have phase shift pattern SP or indicia patterns MK, the irradiation light intensity is not modulated, and handles light under the situation that keeps its intensity.In case of necessity, this light can stop by Protective film or the like.
Be radiated on the substrate 280 by laser beam E, the semiconductor film 282 on the substrate 280 once melts, shown in Figure 27 B.When semiconductor film 282 crystallizations, produce the polycrystal semiconductor film or the single crystal semiconductor films 284 that comprise big crystallite dimension crystal.Simultaneously, alignment mark 284A is formed on the precalculated position of this polycrystal semiconductor film or single crystal semiconductor films 284, and this alignment mark 284A is corresponding to the indicia patterns MK that forms as one with phase modulation component 203.The alignment mark 284A that reads with reference to the scanner detector spare (not shown) of lithographic equipment determines the position of substrate 280.Subsequently, the substrate 280 that is kept by platform 205 moves on two axis directions along the plane of substrate 280, and this will describe with reference to Figure 28 in the back.
Shown in Figure 27 C, utilize photoetching technique, polycrystal semiconductor film or single crystal semiconductor films 284 are patterned into reservation shape, so that form the semiconductor film 285 in the channel region for example will be used as thin-film transistor, source region, drain region or the like, and form the alignment mark 284A that will be retained on the substrate 280.
Then, shown in Figure 27 D, by CVD, sputter or the like on the surface of semiconductor film 285 and alignment mark 284A, form 20nm to 100nm thick, will be as for example SiO of gate insulating film 286 2Film.
Shown in Figure 27 E, the metallic film that on gate insulating film 286, have predetermined thickness, will be used as gate electrode 287 is formed by silicide, MoW or the like.By for example mask and etched series of steps, metallic film is patterned into reservation shape.Utilize gate electrode 287 as mask, implanting impurity ion 288 is being to be boron (B) under phosphorus or the situation at p channel transistor under the situation of N channel transistor for example.Though not shown, the structure that generates is annealed in nitrogen atmosphere (for example, following 1 hour at 450 ℃), and impurity is activated.Therefore, source region 291 and drain region 292 are formed in the semiconductor film 285 of island shape.Needless to say, owing to gate electrode 287 does not have the zone of implanting impurity ion 288 to become raceway groove 290 as mask.
In the subsequent step of Figure 27 F, form interlayer dielectric 289, and form contact hole in the precalculated position by the step (not shown) with predetermined thickness.Source electrode 293 and drain electrode 294 are connected to source region 291 and drain region 292 by this contact hole, and source region 291 is connected by raceway groove 290 with drain region 292.
By above-mentioned steps, can in polycrystalline or single crystal semiconductor, form thin-film transistor (TFT).
The drive circuit that polycrystalline transistor or single-crystal transistor by the above-mentioned steps manufacturing is applicable to LCD, EL (electroluminescence) display or the like perhaps is applicable to the integrated circuit of memory (SRAM, DRAM) for example or CPU.
Be incorporated into the position of the indicia patterns MK of phase modulation component by change, can form alignment mark 284A in the desired location on will the semiconductor film of grown crystal.According to the present invention,, can the characteristic of the semiconductor active device that will form in manufacturing step subsequently or the like not had side effects even alignment mark is arranged on the desired location on the semiconductor film on the substrate yet.
Then, following examples will be described, comprising the display that is applied to be similar to display shown in Figure 8 by base material, for example LCD according to the zone of the crystallization apparatus crystallization of the second and the 3rd embodiment.
Figure 29 illustrates the situation of using the second and the 3rd embodiment, the big crystallite dimension monocrystalline silicon crystal grain of wherein growing when forming alignment mark 350.In the present embodiment, utilize the transparent insulation substrate of support semiconductor film to make display, on this semiconductor film, be pre-formed alignment mark 350 in the lip-deep presumptive area of amorphous semiconductor film.For example, can be according to a following pixel being the unit or the substrate processing unit that is unit with one group of pixel, form alignment mark 350 with preset space length to determined number.
For example, active matrix liquid crystal display 300 is described.LCD 300 comprises with the relative a pair of transparent substrates of preset distance (not shown; See 91 and 92 among Fig. 8 B), liquid crystal layer is (not shown; See 93 among Fig. 8 B), pixel electrode 331, scan line 332, holding wire 333, (not shown to electrode; See 97 among Fig. 8 B) and TFT 330.
Described paired transparent substrates can be formed by for example glass substrate.Transparent substrates is connected to each other by the encapsulant (not shown), to keep inner airtight.In the described substrate at least one comprises semiconductor film, on this semiconductor film, by means of for example being pre-formed alignment mark 350 with reference to the described phase modulation component of figure 12A in the lip-deep presumptive area of amorphous semiconductor film.Utilize this alignment mark to form predetermined pattern or electrode structure.
Liquid crystal layer is sealed in by in the encapsulant region surrounded between the paired transparent substrates.On one the inner surface in paired transparent substrates, provide with rectangular horizontal and vertical matrix to form a plurality of pixel electrodes 331 of arranging, be electrically connected to a plurality of TFT 330 of relevant pixel electrode 331, and the scan line 332 and the holding wire 333 that are electrically connected to TFT 330.
Scan line 332 transversely extends in parallel pixel electrode 331.One end of scan line 332 is connected to a plurality of scan line terminal (not shown) that the pre-position on transparent substrates is provided with.The scan line terminal is connected to scan line drive circuit 341.
Holding wire 333 pixel electrode 331 vertically on extend in parallel.One end of holding wire 333 is connected to a plurality of holding wire terminal (not shown) that the pre-position on transparent substrates is provided with.The holding wire terminal is connected to signal-line driving circuit 342.
Scan line drive circuit 341 and signal-line driving circuit 342 are connected to liquid-crystal controller 343.Picture signal and the synchronizing signal that for example provides from the outside is provided liquid-crystal controller 343, and produces pixel video signal Vpix, vertical scanning control signal YCT and horizontal sweep control signal XCT.
The inner surface of another transparent substrates is provided with relative with pixel electrode 331 membranaceous transparent in electrode.In addition, the inner surface of transparent substrates can be provided with and pixel electrode 331 and colour filter that the relative pixel portion of electrode is associated, and can be provided with this pixel portion between the light blocking film that is associated of zone.
The Polarizer (not shown) is arranged on the outside of paired transparent substrates.Under the situation of the LCD of transmission, surface emitting light source (not shown) is set on the back side of transparent substrates.Needless to say, this LCD can be reflection-type or Transflective (trans-reflectivetype).
As mentioned above, according to the optical element of the second and the 3rd embodiment, when the rayed with predetermined light distribution was on pending object, the light with intensity of specific pattern can be radiated on the desired location simultaneously.
By using the phase modulation component of the second and the 3rd embodiment, can form seed crystal in the optional position on the semiconductor film that is deposited on predetermined thickness on the dielectric substrate.Crystal can begin growth from seed crystal, and can form alignment mark in the optional position on semiconductor film in identical manufacturing step.
In addition, by obtain big crystallite dimension crystal semiconductor film from the seeded lateral growth crystal, this seed crystal is to obtain by the crystallization apparatus and the method for crystallising of utilization according to the phase modulation component (optical element) of the second and the 3rd embodiment.Utilize this big crystallite dimension crystal semiconductor film, can obtain can high speed operation and have semiconductor active device, LCD of good characteristic of semiconductor or the like.
The present invention is not limited to the foregoing description.In fact can under the situation that does not break away from spirit of the present invention, carry out various modifications and variations.Described embodiment can as far as possible suitably make up, and can obtain in the case to be combined as the advantage on basis.

Claims (3)

1, a kind of method for crystallising, the illumination that is used for having two or more light distribution is mapped to non-single crystal semiconductor film, and makes this non-single crystal semiconductor film crystallization,
It is characterized in that in the first and second light distribution zones that are used for providing described two or more light distribution, the described second light distribution zone is made up of two kinds of zones with different light intensity, and sets up following relation,
I 1>I 2>I 3
I wherein 1Be the light intensity maximum in the described first light distribution zone, and I 2And I 3Be respectively the high-value and the low-value of the light intensity in the described second light distribution zone.
2, method for crystallising according to claim 1 is characterized in that, when the minimum intensity of light that takes place in described non-single crystal semiconductor film owing to the irradiation of the light with even light distribution to ablate is I aThe time, set up following relation,
I a>I 2>I 3。
3, method for crystallising according to claim 1 is characterized in that, the minimum intensity of light when described non-single crystal semiconductor film melts owing to the irradiation of the light with even light distribution is I cThe time, set up following relation,
I 2>I c>I 3。
CN2008101881434A 2004-08-09 2005-08-09 Crystallizing method for the semiconductor thin film Expired - Fee Related CN101442000B (en)

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JP232745/2004 2004-08-09
JP2004232745A JP4763983B2 (en) 2004-08-09 2004-08-09 Light modulation element, crystallization apparatus, crystallization method, thin film semiconductor substrate manufacturing apparatus, thin film semiconductor substrate manufacturing method, thin film semiconductor device, thin film semiconductor device manufacturing method, display device, and phase shifter
JP232750/2004 2004-08-09
JP2004232750A JP2006054223A (en) 2004-08-09 2004-08-09 Crystallization method of semiconductor thin film, substrate having crystallized semiconductor thin film, and crystallization device of semiconductor thin film

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