CN101441962B - Micro-tip array device based on field-causing electron emission principle and method for producing the same - Google Patents
Micro-tip array device based on field-causing electron emission principle and method for producing the same Download PDFInfo
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- CN101441962B CN101441962B CN2007101777953A CN200710177795A CN101441962B CN 101441962 B CN101441962 B CN 101441962B CN 2007101777953 A CN2007101777953 A CN 2007101777953A CN 200710177795 A CN200710177795 A CN 200710177795A CN 101441962 B CN101441962 B CN 101441962B
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Abstract
The invention discloses a micro probe array device based on the field electron emission principle, which consists of a silicon nitride film separation end 1, micro probes 2 attached with low work function metal and a wiring groove 3 distributed with metal conducting wires, wherein the separation end 1 is used for preventing the micro probes from contacting a processed material when the device works and controlling the distance between the micro probes and the surface of the processed material; the micro probes 2 are used for generating strong electric field at the probes when micro voltage is applied between a bonding pad and the material to be processed according to the principle of point discharge and causing a great amount of electrons to penetrate voltage barrier and escape; and the wiring groove 3 is used for attaching or accommodating metal which is used as the conducting wires and used as line passages to realize controlling each micro probe. The invention simultaneously discloses a method for manufacturing the micro probe array device based on the field electron emission principle. By the device and the method, high-resolution nano-figure processing and high-density data storage are achieved, and the problem of low working efficiency of a single probe is solved.
Description
Technical field
The present invention relates to field-causing electron lift-off technology field, relate in particular to a kind of micro-tip array device based on field-causing electron emission principle and preparation method thereof, can be applicable to nano-scale pattern processing and high density information and store.
Background technology
Since people's invention tunnel microscopes (STM) such as G.Bining of nineteen eighty-two IBM Corporation, various little most advanced and sophisticated devices have been emerged both at home and abroad.These devices have been widely used in all many-sides such as material surface is found out, high density data access, superfine graph processing.
At present, aspect the high density information storage, little tip is based on principle that electric heating writes and carries out work.This method is that little tip is closely contacted with recording medium, adds heated tip then, makes most advanced and sophisticated emission hot-fluid, and softening gradually recording medium forms pit with the expression data bit.
Aspect figure processing, the technology of utilizing little most advanced and sophisticated device to process has: utilize the tip directly sample surfaces to be delineated; Prepare metallic nanodots by most advanced and sophisticated highfield with sample room.
Above method owing to exist between tip and the recording medium contacts, and causes easily to stain and wear and tear.And utilizing the field-causing electron emission effect of metal tip can launch low-energy electron beam, this electron beam is applied in can avoid proximity effect in the figure processing effectively, thereby improves resolution.And because the processed sample surfaces distance of little distance between two tips is very near, effective beam diameter of electron beam is very little, thereby can produce nano level figure.In addition, because little tip does not touch processed sample, therefore do not exist and stain and wear problems.
Summary of the invention
(1) technical problem that will solve
In view of this, one object of the present invention is to provide a kind of micro-tip array device based on field-causing electron emission principle, stores to realize processing of high-resolution nano level figure and high density data, and solves the ineffective problem of single probe.
Another object of the present invention is to provide a kind of manufacture method of the micro-tip array device based on field-causing electron emission principle, stores to realize processing of high-resolution nano level figure and high density data, and solves the ineffective problem of single probe.
(2) technical scheme
For reaching an above-mentioned purpose, the invention provides a kind of micro-tip array device based on field-causing electron emission principle, this device is made of silicon nitride film isolation end 1, little most advanced and sophisticated 2 and the cloth line groove 3 that is furnished with plain conductor that are attached with tungsten, wherein,
Isolation end 1 is used for avoiding little tip to contact with machined material when device is worked, and controls the distance on little tip and machined material surface;
Little most advanced and sophisticated 2, be used for principle according to point discharge, when adding a small voltage between pad and material to be processed, most advanced and sophisticated place produces very strong electric field, causes a large amount of penetration of electrons potential barriers to overflow;
In the such scheme, described isolation end 1 is for＜100 in the crystal orientation〉single crystal silicon material on the low stress nitride silicon thin film of deposit, the thickness of this silicon nitride film is 1 micron.
In the such scheme, described little most advanced and sophisticated 2 are generated by sputter layer of metal tungsten on the silicon tip end, have several separately controllable little tips on each device, this little tip is by the identical or different operation of peripheral circuit control carrying out simultaneously, this 10 * 10 microns of little most advanced and sophisticated undercut surfaces size, high 5 microns, most advanced and sophisticated place radius of curvature is less than 50 nanometers.
In the such scheme, described silicon tip end is the cone point that obtains by anisotropic etch monocrystalline silicon; The thickness of described tungsten is 2000 dusts.
In the such scheme, described cloth line groove 3 is obtained by anisotropic etch monocrystalline silicon, is of a size of 0.5 * 1.5 centimetre, dark 5 microns; Be attached with the metallic film as the lead that connects little tip in cloth line groove 3, wire end has the pad of controlling single little point discharge respectively, and pad size is 1 * 1 millimeter, micro needlepoint is connected with external circuit, by the independent or unified operation of control program.
In the such scheme, described metal as lead is the duplicature of chromium and gold, and the chromium layer thickness is 50 dusts, and golden layer thickness is 1000 dusts.
For reaching above-mentioned another purpose, the invention provides a kind of manufacture method of the micro-tip array device based on field-causing electron emission principle, this method comprises:
A, at substrate face growth low stress nitride silicon thin film;
B, on the silicon nitride film of growth, generate the positioning pattern of little tip and cloth line groove;
C, use KOH solution carry out wet etching, generate taper silicon tip end and cloth line groove;
D, splash-proofing sputtering metal tungsten forms little tip on the silicon tip end that forms, and evaporation chromium and gold are as metal line and connection pads in the cloth line groove that forms.
In the such scheme, substrate described in the steps A is that the crystal orientation is＜100〉thick 300 microns single-sided polishing monocrystalline silicon piece, adopting the LPCVD method is 1 micron low stress nitride silicon thin film at this substrate face growth thickness.
In the such scheme, the positioning pattern that generates little tip and cloth line groove described in the step B adopts dry etching method to realize, the size of the positioning pattern of described little tip and cloth line groove is respectively the rectangle of 10 * 10 microns squares and 0.5 * 1.5 centimetre.
In the such scheme, the thickness of the tungsten of sputter described in the step D is 2000 dusts, and the thickness of the chromium of evaporation is 50 dusts, and the thickness of the gold of evaporation is 1000 dusts.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, adopts the processing of field emitted electron Shu Jinhang figure, resolution height; Add the voltage with respect to processed sample by lead to metal tip, because the tip is very near sample surfaces (spacing is an isolation end thickness), small voltage also can produce very strong electric field, make the surface potential barrier of most advanced and sophisticated metal material reduce, barrier width narrows down, cause a large amount of electronics can pass through potential barrier and overflow, thereby change, realize nano-scale pattern processing or storage by the character of electron beam exposure sample segment.
2, adopt the little tip of array that to unify or control respectively, operating rate height; External control circuit links to each other by the lead that is connected little tip on pad and the device.There is separately independently pad at each little tip, therefore can or control each tip uniformly by external circuit independence.
3, use monocrystalline silicon as the substrate manufacturing, with low cost; The monocrystalline silicon of employing＜100〉crystal orientation is as substrate.Often adopt soi structure to compare with existing little most advanced and sophisticated device, reduced cost of manufacture as making substrate.
4, by the standard MEMS processes, the rate of finished products height; By the standard MEMS processes.The silicon nitride film figure of isolation end forms by LPCVD and dry etching; Little tip is made by wet etching and sputter low workfunction metal (as: tungsten); The cloth line groove is by the wet etching manufacturing; Metal line forms by the evaporated metal material.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples:
Fig. 1 is the structural representation of the micro-tip array device based on field-causing electron emission principle provided by the invention;
Fig. 2 is the manufacture method flow chart of the micro-tip array device based on field-causing electron emission principle provided by the invention;
Fig. 3 is the manufacture craft flow chart according to Fig. 2;
Among the figure, 1. support end, 2. little tip, 3. cloth line groove, 4. plain conductor, 5. pad, 6. substrate, 7. low stress nitride silicon thin film, 8. little most advanced and sophisticated positioning pattern, 9. cloth line groove positioning pattern, 10. silicon tip end.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structural representation of the micro-tip array device based on field-causing electron emission principle provided by the invention, and this device is made of silicon nitride film isolation end 1, little most advanced and sophisticated 2 and the cloth line groove 3 that is furnished with plain conductor that are attached with tungsten.Wherein, isolation end 1 is used for avoiding little tip to contact with machined material when device is worked, and controls the distance on little tip and machined material surface; Little most advanced and sophisticated 2 principles that are used for according to point discharge, when adding a small voltage between pad and material to be processed, most advanced and sophisticated place produces very strong electric field, causes a large amount of penetration of electrons potential barriers to overflow; Cloth line groove 3 is used to adhere to or hold the metal as lead, realizes control to each little tip as line channel.
Above-mentioned isolation end 1 is for＜100 in the crystal orientation〉single crystal silicon material on the low stress nitride silicon thin film of deposit, the thickness of this silicon nitride film is 1 micron.
Above-mentioned little most advanced and sophisticated 2 low workfunction metal (as: tungsten) by sputter one deck 2000 dusts on the silicon tip end generate, the silicon tip end is the cone point that obtains by anisotropic etch monocrystalline silicon, have several separately controllable little tips on each device, this little tip is by the identical or different operation of peripheral circuit control carrying out simultaneously, this 10 * 10 microns of little most advanced and sophisticated undercut surfaces size, high 5 microns, most advanced and sophisticated place radius of curvature is less than 50 nanometers.
Above-mentioned cloth line groove 3 is obtained by anisotropic etch monocrystalline silicon, is of a size of 0.5 * 1.5 centimetre, dark 5 microns; Be attached with the metallic film as the lead that connects little tip in cloth line groove 3, wire end has the pad of controlling single little point discharge respectively, and pad size is 1 * 1 millimeter, micro needlepoint is connected with external circuit, by the independent or unified operation of control program.Metal as lead is the duplicature of chromium and gold, and the chromium layer thickness is 50 dusts, and golden layer thickness is 1000 dusts.
Based on the structural representation of micro-tip array device based on field-causing electron emission principle shown in Figure 1, Fig. 2 shows the manufacture method flow chart of the micro-tip array device based on field-causing electron emission principle provided by the invention, and this method comprises:
Step 201: at substrate face growth low stress nitride silicon thin film;
Step 202: the positioning pattern that on the silicon nitride film of growth, generates little tip and cloth line groove;
Step 203: use KOH solution to carry out wet etching, generate taper silicon tip end and cloth line groove;
Step 204: splash-proofing sputtering metal tungsten forms little tip on the silicon tip end that forms, and evaporation chromium and gold are as metal line and connection pads in the cloth line groove that forms.
Substrate described in the above-mentioned steps 201 is that the crystal orientation is＜100〉thick 300 microns single-sided polishing monocrystalline silicon piece, adopting the LPCVD method is 1 micron low stress nitride silicon thin film at this substrate face growth thickness.
The positioning pattern that generates little tip and cloth line groove described in the above-mentioned steps 202 adopts dry etching method to realize, the size of the positioning pattern of described little tip and cloth line groove is respectively the rectangle of 10 * 10 microns squares and 0.5 * 1.5 centimetre.
The thickness of the tungsten of sputter described in the above-mentioned steps 204 is 2000 dusts, and the thickness of the chromium of evaporation is 50 dusts, and the thickness of the gold of evaporation is 1000 dusts.
Making provided by the invention is＜100 by the crystal orientation based on the process chart of the micro-tip array device of field-causing electron emission principle as shown in Figure 3〉thick 300 microns single-sided polishing monocrystalline silicon piece as substrate (6).The first step as Fig. 3-1, uses LPCVD at substrate face growth 1 micron low stress nitride silicon thin film (7).In second step, as Fig. 3-2, by generating the positioning pattern of little tip and cloth line groove on the silicon nitride film that is dry-etched in growth, dimension of picture is respectively the rectangle (9) of 10 * 10 microns squares (8) and 0.5 * 1.5 centimetre.In the 3rd step, as Fig. 3-3, use KOH solution to carry out wet etching, and generate the silicon tip end (10) and the cloth line groove (3) of taper.In the 4th step, as Fig. 3-4, the tungsten of sputter 2000 dusts on the silicon tip end that has formed forms little tip (2).In the 5th step, as Fig. 3-5, the gold of the road of evaporation 50 dusts and 1000 dusts is as metal line (4) and connection pads (5) in the cloth line groove that has formed.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the micro-tip array device based on field-causing electron emission principle is characterized in that, this device is made of silicon nitride film isolation end (1), the cloth line groove (3) that is attached with little tip (2) of tungsten and is furnished with plain conductor, wherein,
Isolation end (1) is used for avoiding little tip to contact with machined material when device is worked, and controls the distance on little tip and machined material surface;
Little tip (2) is used for the principle according to point discharge, and when adding a small voltage between pad and material to be processed, most advanced and sophisticated place produces very strong electric field, causes a large amount of penetration of electrons potential barriers to overflow;
Cloth line groove (3) is used to adhere to or hold the metal as lead, realizes control to each little tip as line channel.
2. the micro-tip array device based on field-causing electron emission principle according to claim 1, it is characterized in that, described isolation end (1) is for＜100 in the crystal orientation〉single crystal silicon material on the low stress nitride silicon thin film of deposit, the thickness of this silicon nitride film is 1 micron.
3. the micro-tip array device based on field-causing electron emission principle according to claim 1, it is characterized in that, described little tip (2) is generated by sputter layer of metal tungsten on the silicon tip end, have several separately controllable little tips on each device, this little tip is by the identical or different operation of peripheral circuit control carrying out simultaneously, this 10 * 10 microns of little most advanced and sophisticated undercut surfaces size, high 5 microns, most advanced and sophisticated place radius of curvature is less than 50 nanometers.
4. the micro-tip array device based on field-causing electron emission principle according to claim 3 is characterized in that, described silicon tip end is the cone point that obtains by anisotropic etch monocrystalline silicon; The thickness of described tungsten is 2000 dusts.
5. the micro-tip array device based on field-causing electron emission principle according to claim 1 is characterized in that, described cloth line groove (3) is obtained by anisotropic etch monocrystalline silicon, is of a size of 0.5 * 1.5 centimetre, dark 5 microns;
In cloth line groove (3), be attached with metallic film as the lead that connects little tip, wire end has the pad of controlling single little point discharge respectively, pad size is 1 * 1 millimeter, micro needlepoint is connected with external circuit, by the independent or unified operation of control program.
6. the micro-tip array device based on field-causing electron emission principle according to claim 5 is characterized in that, described metal as lead is the duplicature of chromium and gold, and the chromium layer thickness is 50 dusts, and golden layer thickness is 1000 dusts.
7. the manufacture method based on the micro-tip array device of field-causing electron emission principle is characterized in that, this method comprises:
A, at substrate face growth low stress nitride silicon thin film;
B, on the silicon nitride film of growth, generate the positioning pattern of little tip and cloth line groove;
C, use KOH solution carry out wet etching, generate taper silicon tip end and cloth line groove;
D, splash-proofing sputtering metal tungsten forms little tip on the silicon tip end that forms, and evaporation chromium and gold are as metal line and connection pads in the cloth line groove that forms.
8. the manufacture method of the micro-tip array device based on field-causing electron emission principle according to claim 7, it is characterized in that, substrate described in the steps A is that the crystal orientation is＜100〉thick 300 microns single-sided polishing monocrystalline silicon piece, adopting the LPCVD method is 1 micron low stress nitride silicon thin film at this substrate face growth thickness.
9. the manufacture method of the micro-tip array device based on field-causing electron emission principle according to claim 7, it is characterized in that, the positioning pattern that generates little tip and cloth line groove described in the step B adopts dry etching method to realize, the size of the positioning pattern of described little tip and cloth line groove is respectively the rectangle of 10 * 10 microns squares and 0.5 * 1.5 centimetre.
10. the manufacture method of the micro-tip array device based on field-causing electron emission principle according to claim 7, it is characterized in that, the thickness of the tungsten of sputter described in the step D is 2000 dusts, and the thickness of the chromium of evaporation is 50 dusts, and the thickness of the gold of evaporation is 1000 dusts.
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| CN104096311B (en) * | 2014-07-01 | 2016-03-23 | 中山大学 | Based on the manufacture method of the microneedle array of high voltage electric field |
| CN106546879A (en) * | 2015-09-18 | 2017-03-29 | 国网智能电网研究院 | A kind of SF6The preparation method of gas sensor and its sparking electrode |
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| CN1413353A (en) * | 1999-12-31 | 2003-04-23 | 尖端设备公司 | Segmented grid drive for dynamic electron beam shape correction in field emission cathodes |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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