CN101441297A - Polarization luminous element - Google Patents
Polarization luminous element Download PDFInfo
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- CN101441297A CN101441297A CNA2007101936894A CN200710193689A CN101441297A CN 101441297 A CN101441297 A CN 101441297A CN A2007101936894 A CNA2007101936894 A CN A2007101936894A CN 200710193689 A CN200710193689 A CN 200710193689A CN 101441297 A CN101441297 A CN 101441297A
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Abstract
The invention discloses a polarization luminous element, including a base plate and luminous semiconductor stack structure which is on the base plate and comprises a first area and a second area, wherein the second area includes a photon crystal structure. The first area generates light source which generates polarization light through passing the crystal structure.
Description
Technical field
The present invention relates to a kind of light-emitting component that can send polarization light.
Background technology
Among the optical system of needs polarization light source, in order to allow general non-polarized light source be controlled at the element place of the single polarized light of control, must in the middle of optical design, add polarization converter, make light source have the particular polarization direction, but this not only takes up space on Design for optical system, and light source is utilizing through the element that only has the single polarized light of light Be Controlled of half after the polarization conversion.
Other conventional art is also favourable to produce polarized light with photonic crystal.It generally is photonic crystal (photonic crystal) structural sheet that oval-shaped hole is set in light emitting diode.Fig. 1 illustrates traditional photon crystal structure distribution schematic diagram.Consult Fig. 1, photon crystal structure has some photonic crystal distribution patterns 100a, 100b, 100c, and the shape of the xsect of each photonic crystal is oval.Owing to this photon crystal structure can penetrate according to the difference of incident light polarization direction or reflect, the light that penetrates this photon crystal structure thus promptly has the characteristic of polarized light.Therefore, after the luminescent layer below the photon crystal structure layer was luminous, light can be reflected by the photon crystal structure layer because of the difference of polarised direction of itself or penetrate.The light that penetrates can have polarization characteristic.The light that is reflected, can penetrate and the repetitive cycling use from the photon crystal structure layer after reflecting once more running into the reflection horizon.The reflection horizon that oval-shaped photonic crystal hole is added in the LED core forms the light circulative metabolism, makes the light that sends have the characteristic of polarization.
Yet the dealer still continues to research and develop the light-emitting component with polarization effect, seeks various design.
Summary of the invention
The invention provides a kind of light-emitting component of polarization, comprise substrate and emitting semiconductor stacked structure.The semiconductor stack stack structure comprises first area and second area at least on substrate, wherein second area comprises photon crystal structure, and the first area produces light source, and this light source row produces polarized light behind this photon crystal structure.
The invention provides a kind of light-emitting component of polarization, comprise substrate and semiconductor stack stack structure.The semiconductor stack stack structure comprises a plurality of strip regions on substrate, wherein comprise at least one photon crystal structure between these strip regions.When the light source row that is produced after arriving photon crystal structure, can be removed and have polarization characteristic through one section waveguiding structure.
The invention provides a kind of light-emitting component of polarization, comprise substrate and semiconductor stack stack structure.The semiconductor stack stack structure comprises at least one outstanding block layer on substrate.Comprise photon crystal structure on the outstanding block layer.When the light source row that is produced produces polarized light behind photon crystal structure.
The invention provides a kind of light-emitting component of polarization, comprise substrate and semiconductor stack stack structure.The semiconductor stack stack structure comprises a plurality of outstanding block layer forming array and distributes on substrate, comprises photon crystal structure on each outstanding block layer.When the light source row that is produced changes polarized light into behind photon crystal structure.
For the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. are described below in detail.
Description of drawings
Fig. 1 illustrates the crystal distributed architecture synoptic diagram of traditional photon crystal structure.
Fig. 2 illustrates according to the embodiment of the invention, the coordinate in the corresponding k of photon crystal structure space, the schematic diagram of mechanism of generation polarization.
Fig. 3 illustrates the checking synoptic diagram of angle of light degree and light polarization degree.
Fig. 4 illustrates according to the embodiment of the invention, according to the luminous mechanism synoptic diagram of the light-emitting component of the polarization of waveguide mode.
Fig. 5 illustrates the generation mechanism of planar light.
Fig. 6 illustrates according to one embodiment of the invention, the light-emitting component schematic perspective view of waveguide mode.
Fig. 7 illustrates in Fig. 6 along the structural representation of the section of I-I.
Fig. 8 illustrates according to another embodiment of the present invention, the diagrammatic cross-section of the light-emitting component of polarization.
Fig. 9 illustrates according to another embodiment of the present invention, the diagrammatic cross-section of the light-emitting component of polarization.
Figure 10 illustrates according to one embodiment of the invention, the diagrammatic cross-section of the light-emitting component of polarization.
Figure 11 illustrates according to the embodiment of the invention, the light-emitting component schematic perspective view of polarization.
Figure 12 to 15 illustrates according to the embodiment of the invention, the diagrammatic cross-section of the light-emitting component of polarization.
Figure 16 A and 16B illustrate the light emitting element structure stereographic map and the top view of platform structure.
Figure 17 illustrates according to one embodiment of the invention, the light-emitting component stereographic map of platform structure formula.
Figure 18 illustrates according to one embodiment of the invention, along the cross-sectional view of the III-III line of Figure 17.
Figure 19 to 21 illustrates according to some embodiments of the invention, along the cross-sectional view of the III-III line of Figure 17.
Figure 22 illustrates according to the embodiment of the invention, the light-emitting component schematic perspective view.
Description of reference numerals
100a, 100b, 100c: photonic crystal distribution patterns 106: planar light
110: photon crystal 1 12: lattice
114: light-emitting zone 116: photonic crystal region
118: light emitting source 120: reflection horizon
122: photon crystal structure 124: planar light
200: substrate 202: the semiconductor stack stack structure
210: luminescence unit 212: photon crystal structure
Conductive-type semiconductor layer 222 in 220: the first: the active illuminating layer
Conductive-type semiconductor layer 226 in 224: the second: ohmic contact layer
228: waveguiding structure 230: wave guide direction
232:DBR structural sheet 300: substrate
Conductive-type semiconductor layer 304 in 302: the first: the semiconductor stack stack structure
305: outstanding 306: the first electrode layer of block layer
308: the second electrode lay 310: photon crystal structure
312: light-emitting component 320: the active illuminating layer
Conductive-type semiconductor layer 324 in 322: the second: ohmic contact layer
The 332:DBR structural sheet
Embodiment
The present invention proposes a kind of light-emitting component of tool polarization characteristic, for example this light-emitting component can be applied in the optical system that needs the polarization light source.The polarized light of light-emitting component can directly use, and need not use polarization converter.Or, when the light-emitting component of this tool polarization characteristic uses at the collocation polarization converter, can allow the loss of light source significantly reduce.Below for some embodiment as description of the invention, but the present invention is not subject to illustrated embodiment, and illustrated embodiment does suitable combination mutually, need not be limited to other single embodiment.
The present invention can utilize the design of waveguiding structure, platform structure and photon crystal structure to obtain the bright dipping that polarizes.This has the light-emitting component of polarization characteristic, for example can be applied in relevant ranges such as Projection Display.
The present invention proposes a kind of light-emitting component of tool polarization bright dipping, comprises the configuration of electrode, photonic crystal and waveguiding structure.Design cycle, radius, the degree of depth, lattice and the arrangement mode of size, shape and the photonic crystal of waveguiding structure according to the wavelength of light-emitting component, cooperate electrode design control light-emitting zone simultaneously, and modulation semiconductor stack thickness of structure and position, the bright dipping of reaching light-emitting component has polarization characteristic.
About the design of photonic crystal, the characteristic that the present invention is directed to photonic crystal is done more deep discovering, the crystalline network of photonic crystal and incident direction of light can be with to get light intensity relevant.Fig. 2 illustrates according to the embodiment of the invention, photon crystal structure and incident light direction, corresponding k (the coordinate synoptic diagram in space of=2 π/λ).Consult Fig. 2, photon crystal structure is made up of a plurality of photon crystal 1 10, for example forms the lattice 112 of sixfold symmetry.Learning after deliberation, is in the Г of lattice M direction as the planar light 106 of incident, and then getting light intensity from the photon crystal structure top can be maximum.
Fig. 3 illustrates the checking synoptic diagram of angle of light degree and light polarization degree.Consult Fig. 3, as 0 degree, then incident light can have and significantly gets light effect in the directions of 0 degree with 30 degree with a Г M direction.Because light can make that light approaches plane wave after through one section waveguide, and the light source that is produced is main for the TE pattern, thereby impel the polarised direction of light to arrange unanimity because of the direction of propagation perpendicular to light, so incident light carries out strong can making bright dipping have tangible polarization effect after getting light in 0 degree and the directions of 30 degree.The present invention also thus Mechanism Design go out the light-emitting component of polarization, for example be the light-emitting diode of polarization.
Fig. 4 illustrates according to the embodiment of the invention, according to the luminous mechanism synoptic diagram of the light-emitting component of the polarization of waveguide mode.Consult Fig. 4, for the light emitting source 118 of light-emitting zone 114, its light that sends is entered the zone 116 of photon crystal structure 122 by lateral steering.For example reflection horizon 120 can be set again again, avoid light to leak outside, also allow the light of this part to reuse again.The light that takes out from photon crystal structure 122 tops has the effect of polarization.Fig. 5 illustrates the generation mechanism of planar light.Because light sends from light source 118, can complanation light 124 behind the segment distance of passing through.Mechanism is by the effect of photon crystal structure 122 as the aforementioned for this planar light 124, and the light of obtaining above zone 116 has the polarization effect.
Fig. 6 illustrates according to one embodiment of the invention, the light-emitting component schematic perspective view of waveguide mode.Consult Fig. 6, below describe the light-emitting component of more concrete polarization, comprise substrate 200, semiconductor stack stack structure 202, first electrode layer 206 and the second electrode lay 208.Semiconductor stack stack structure 202 comprises first area and second area at least on substrate 200.Wherein second area comprises photon crystal structure 212.The second electrode lay is corresponding with first electrode layer, constitutes light-emitting component.At present embodiment for example: the second electrode lay 208 is shared, constitute two luminescence units 210 with two first electrode layers 206, and the first area has luminescence unit 210.
Fig. 7 illustrates in Fig. 6 along the structural representation of the section of I-I.Consult Fig. 7, the semiconductor stack stack structure 202 of present embodiment for example is a light-emitting diode structure, includes the stacked structure of active illuminating layer 222, first conductive-type semiconductor layer 220 and second conductive-type semiconductor layer 224.First conductive-type semiconductor layer 220 for example is the n conductive-type semiconductor layer, and second conductive-type semiconductor layer 224 for example is the p conductive-type semiconductor layer.Otherwise again, first conductivity type also can be the p conductivity type, and then second conductivity type is the n conductivity type.On the conductivity type of correspondence, respectively has its corresponding electrode 206 and 208.This corresponding electrode can be positioned at the coplanar of light-emitting element chip or coplanar not, and the active illuminating layer is between n N-type semiconductor N and p N-type semiconductor N, and electric current makes that the active illuminating layer is luminous after being injected by electrode.The semiconductor stack stack structure is formed on the substrate 200, and its material for example can be III-V family or Silicon constitutes, for example semiconductor material such as n-GaN and p-GaN.The material of substrate 200 can for example be glass, metal, sapphire (sapphire), crystal, SiC, Si, GaAs, GaP or AlN etc., is not limited to specific material.
In addition, ohmic contact layer 226 also can be arranged on the semiconductor stack stack structure 202 between the electrode layer 206 and second conductive-type semiconductor layer 224.Electrode layer 208 is on first conductive-type semiconductor layer 220 of semiconductor stack stack structure 202.So, apply suitable forward bias voltage drop by electrode layer 206 and 208 and just can make light emitting diode send light, and guided to photon crystal structure 212 by waveguiding structure 228.
On making, for example on substrate 200, form epitaxial structure with n-GaN 220, active illuminating layer 222 and p-GaN 224, less than the distance of p-GaN 224 to substrate 200, active illuminating layer 222 is between n-GaN 220 and p-GaN 224 to the distance of substrate 200 for n-GaN220.Can be on p-GaN224 by chemical vapor deposition (chemical vapor deposition, CVD) mode is made layer of material, for example be SiOx or SiNx etc., then photoetching process comprise coat photoresist on this material after, among photoresist, produce the pattern of photonic crystal in the mode of interfere type photoetching, beamwriter lithography or gold-tinted photoetching.Next after utilizing etched mode the pattern of photonic crystal to be transferred in the material of chemical vapor deposition made by photoresist, pass through again etching with this design transfer to the stacked structure of GaN, this etch process can eating thrown active illuminating layer 222 or eating thrown active illuminating layer 222 not.So form photon crystal structure 212 in the light emitting diode, photonic crystal region for example is 90 microns in the length of horizontal direction.On p-GaN and n-GaN, make p type pad and n type pad at last respectively as electrode layer 206 and 208.And when among photoresist, producing the pattern of photonic crystal, can utilize the mode of gold-tinted photoetching to reserve the zone of required p electrode, photonic crystal is not done in this zone, and between p electrode and p-GaN, also for example form transparent ohmic contact layer 226, as the material of NiO or Ni/Au etc.
After the active illuminating layer 222 of p electrode 206 belows is luminous, because interface refractive index difference causes the cause of light reflection, and make light form waveguide mode in epitaxial structure or substrate, epitaxial structure or the substrate of supporting waveguide mode to propagate are waveguiding structure 228.If photonic crystal is made in the substrate, then the waveguide mode in the substrate can be taken out by photonic crystal, because the light that active illuminating layer 222 sends mostly is the TE pattern, the polarization direction of the light of propagating along transverse axis (y axle) in waveguiding structure is on the x axle (TExlight) all, when this light ray propagation during to photonic crystal region, photonic crystal can take out light and keep the polarised direction on its original x axle, thereby makes this light emitting diode have the characteristic of polarization.
Again, the lattice pattern of photon crystal structure 212 for example can comprise quadruple symmetry, sixfold symmetry, rectangle lattice, periodic arrangement structure, multiple periodicity arrangement architecture, quasi periodic structures or aperiodic structure.And the structure example of photon crystal structure 212 crystal units is as the structure except hole, for example can be column, taper, concavo-convex, discontinuous concavo-convex or in conjunction with wherein several structures continuously.The cross sectional form of crystal unit can be polygon, circle or ellipse etc.
In addition, in order to improve light-emitting area to increase the light intensity that of light emitting diode, the transparent ohmic contact layer may extend to p-GaN 224 surfaces of photonic crystal region.Fig. 8 illustrates according to another embodiment of the present invention, the diagrammatic cross-section of the light-emitting component of polarization.Consult Fig. 8, the structure of present embodiment and the structural similarity of Fig. 7, however ohmic contact layer 226 can extend to the zone of photon crystal structure 212.In other words, the zone of photon crystal structure 212 also can be luminous.Cooperate epitaxial structure thickness and big or small design again, make the active illuminating layer can only send the light of pattern, so light emitting diode can send high-intensity polarization light with particular polarization direction.
Again, in design, the number of modes that can exist in the waveguiding structure can be determined by Several Parameters.For example, when the thickness of symmetrical wave guide structure was d, the number of modes that can exist in this waveguiding structure was: M=2* (d/ λ
0) * NA,
λ
0Be optical wavelength in the vacuum, NA is a numerical aperture.
Moreover, for the effect that promotes waveguide makes the light of propagating along the y axle increase, in the middle of light emitting diode, can add distribution Bragg reflector (Distributed Bragg Reflector, structure DBR).Fig. 9 illustrates according to another embodiment of the present invention, the diagrammatic cross-section of the light-emitting component of polarization.Consult Fig. 9, after the active illuminating layer below the electrode 206 222 was luminous, dbr structure layer 232 made most light all propagate along the y axle, and the polarization direction of the light of propagating along the y axle all on the x axle (TEx light).When this light ray propagation during to photonic crystal region, photonic crystal can take out light and keep the polarised direction on its original x axle, because the light of propagating along the y axle increases, so also improve the polarization light intensity of light emitting diode.
Figure 10 illustrates according to one embodiment of the invention, the diagrammatic cross-section of the light-emitting component of polarization.Consult Figure 10,, can make transparent ohmic contact layer 226 extend to the surface of the upper strata dbr structure layer 232 of photonic crystal region in order to improve light-emitting area to increase the light intensity that of light emitting diode.At this moment, the active illuminating layer 222 of transparent ohmic contact layer 226 below all can be luminous.Cooperate epitaxial structure thickness and big or small design again, make the active illuminating layer can only send the light of pattern, so light emitting diode can send high-intensity polarization light with particular polarization direction.In addition, on the rightabout side of waveguide, can add reflection configuration,, reduce the light that scatters and disappears the side thus and improve the light of on wave guide direction, propagating simultaneously as the photon crystal structure of a tool reflection characteristic.
Light emitting diode of the present invention can be made into for example light emitting source of big light-emitting area.Figure 11 illustrates according to the embodiment of the invention, the light-emitting component schematic perspective view of polarization.Consult Figure 11, the present embodiment place different with preceding embodiment is to increase the number and the width that reduces photonic crystal region on the y axle of y axle top electrode.Because in the process of waveguide, when light enters photonic crystal region, the light of part can be taken out by photon crystal structure, therefore, when light constantly when photonic crystal region is propagated, photon crystal structure can constantly take out the light of propagating in waveguiding structure, make light ray propagation extremely from light source local time far away more, and the light intensity that photon crystal structure can take out will be weak more.Therefore, the size of suitable design photonic crystal region and the suitable number of electrodes of collocation increase light-emitting area and can make light emitting diode have preferable polarization to go out light intensity.So present embodiment constitutes a plurality of luminescence units 210 as having two n electrodes 208 and three p electrodes 206.And the photon crystal structure 212 between p electrode 206 and n electrode 208 for example is 15 microns in the axial length of y.Because the active illuminating layer of p electrode 206 belows all can be luminous, therefore increased light-emitting area, the polarised direction that the most light that be transmitted to n electrode direction by the p electrode this moment could be taken out and keep it by photon crystal structure when propagating makes light emitting diode have the characteristic of polarization.Figure 12 to 15 illustrates according to the embodiment of the invention, the diagrammatic cross-section of polarization light-emitting component.Consult Figure 12, Figure 12 is the cross-section structure of Figure 11 at II-II.The structural similarity of itself and earlier figures 7, but the quantity of size and luminescence unit do to change and adjust, increase light-emitting area and quality, and then the easier demand that reaches the polarization light source.Consult Figure 13, transparent ohmic contact layer 226 extends to photon crystal structure 212.Consult Figure 14, it is the structure of setting up DBR layer 232.Consult Figure 15, it for example is to be provided with DBR layer 232 simultaneously and transparent ohmic contact layer 226 is extended to photon crystal structure 212.
The present invention also can design light-emitting component with the mode of platform structure.Figure 16 A and 16B illustrate the light emitting element structure stereographic map and the top view of platform structure.Consult Figure 16 A, the light-emitting component of platform-type polarization comprises substrate 300, semiconductor stack stack structure 304, first electrode layer 306 and the second electrode lay 308.Semiconductor stack stack structure 304 is formed on the substrate 300, comprising 305 formation of outstanding block layer.Comprise photon crystal structure 310 on the outstanding block layer 305.First electrode layer 306 is on outstanding block layer 305.The second electrode lay 308 in semiconductor stack stack structure 304 302 on, and be positioned at the edge of outstanding block layer 305, with first electrode layer, 306 corresponding formation light-emitting components 312.Outstanding block layer 305 is also referred to as platform (platform) structure 305.
Below, first electrode layer 306 for example is to be embodiment with the p electrode, the second electrode lay 308 for example is that the n electrode is done explanation for embodiment.Light by the active illuminating layer of semiconductor stack stack structure is sent can be subjected to the guiding and the control of platform structure, makes light propagate along the x direction of principal axis.Consult Figure 16 B, after electric current was injected by electrode, the active illuminating layer of p electrode 306 belows can be luminous, because interface refraction coefficient difference, causes the cause of light reflection and make light form waveguide mode in platform structure 305.The platform structure 305 of supporting waveguide mode to propagate can comprise epitaxial structure or substrate.If photonic crystal is made in the substrate, then the waveguide mode in the substrate can be taken out by photonic crystal.The light that sends owing to active illuminating layer 320 in platform structure 305 mostly is the TE pattern, along its polarization direction of light that the x axle is propagated all on the y axle (TEy light), when the light of propagating along the x axle enters photonic crystal region, photonic crystal can take out light and keep the polarised direction on its original y axle, thereby makes this light emitting diode have the characteristic of polarization.In addition, the relevant position (e) of the size (c and d) of the structure of size (a and b) that more can be by the modulation photonic crystal region and shape, photonic crystal, electrode and shape and electrode and photonic crystal improves the polarization characteristic of light emitting diode.Each platform structure taper of can be column or cutting off for example, for example width is between about 5～500 microns for its size, and length is between about 10～1000 microns, and is highly about below 10 microns.Actual size is decided according to design.
In addition, in order to improve light-emitting area to increase the light intensity that of light emitting diode, machine-processed as the aforementioned, the transparent ohmic contact layer may extend to the p-GaN surface of photonic crystal region.At this moment, the active illuminating layer of transparent ohmic contact layer below all can be luminous, cooperate the thickness of platform structure 305, the design of size and shape again, make the active illuminating layer can only send the light of pattern, so light emitting diode can send high-intensity polarization light with particular polarization direction.Moreover, for the effect that promotes waveguide makes the light of propagating along the x axle increase, in the middle of light emitting diode, can add dbr structure.Because after the active illuminating layer of p electrode below is luminous, dbr structure makes most light all propagate along the x axle, and the polarization direction of the light of propagating along the x axle all on the y axle (TEy light), when this light ray propagation during to photonic crystal region, photonic crystal can take out light and keep the polarised direction on its original y axle, therefore the light of propagating along the x axle in the platform structure increases, so also improve the polarization light intensity of light emitting diode.
In addition, in order to improve light-emitting area to increase the light intensity that of light emitting diode, the transparent ohmic contact layer may extend to the surface of the upper strata DBR of photonic crystal region, at this moment, the active illuminating layer of transparent ohmic contact layer below all can be luminous, cooperate the thickness of platform structure, the design of size and shape again, make the active illuminating layer can only send the light of pattern, so light emitting diode can send high-intensity polarization light with particular polarization direction.In addition, on the rightabout side of waveguide, can add reflection configuration,, reduce the light that scatters and disappears the side thus and improve the light of on wave guide direction, propagating simultaneously as the photon crystal structure of tool reflection characteristic.
Particularly, Figure 17 illustrates according to one embodiment of the invention, the light-emitting component stereographic map of platform structure formula.Consult Figure 17, a plurality of light-emitting components 312 can be set on substrate 300.Semiconductor stack stack structure 304 includes first conductive-type semiconductor layer 302 and outstanding block layer 305 on substrate 300, wherein comprise a plurality of outstanding block layer 305 forming array on first conductive-type semiconductor layer 302 and distribute.Comprise photon crystal structure 310 on each outstanding block layer 305.First electrode layer 306 is on each outstanding block layer 305.The second electrode lay 308 in semiconductor stack stack structure 304 302 on, be positioned at the edge of outstanding block layer 305, corresponding with first electrode layer 306, constitute luminescence unit.
Figure 18 illustrates according to one embodiment of the invention, along the cross-sectional view of the III-III line of Figure 17.Consult Figure 18, technology such as the deposition by semiconductor technology, photoetching, etching, semiconductor stack stack structure lamination is formed on the substrate 300.Semiconductor stack stack structure 304 laminations include first conductive-type semiconductor layer 302, active illuminating layer 320 and second conductive-type semiconductor layer 322, be formed on the substrate 300, and ohmic contact layer 324 are formed on 304.Through the photoetching etching, form outstanding block layer 305, photon crystal structure 310 is arranged on it.In addition, electrode layer 306,308 is formed at respectively on the ohmic contact layer 324 and first conductive-type semiconductor layer 302.The structure of material and photonic crystal such as previous description.
After electric current was injected by electrode, the active illuminating layer 320 of electrode 306 belows can be luminous.Make light form waveguide mode in platform structure owing to interface refractive index difference causes the cause of light reflection, the platform structure of supporting waveguide mode to propagate can comprise epitaxial structure or substrate.If photonic crystal is made in the substrate, then the waveguide mode in the substrate can be taken out by photonic crystal.In platform structure because the light of propagating along the x axle, its polarization direction is all on the y axle, when the light of propagating along the x axle entered photonic crystal region, photonic crystal can take out light and keep the polarised direction on its original y axle, thereby makes this light emitting diode have the characteristic of polarization.In addition, the relevant position of the size of the structure of size that more can be by the modulation photonic crystal region and shape, photonic crystal, electrode and shape and electrode and photonic crystal improves the polarization characteristic of light emitting diode.
Figure 19-21 illustrates according to some embodiments of the invention, along the cross-sectional view of the III-III line of Figure 17.According to previously described design variation, consult Figure 19, in order to improve light-emitting area to increase the light intensity that of light emitting diode, transparent ohmic contact layer 324 may extend to second conductive-type semiconductor layer, 322 surfaces of photonic crystal region.At this moment, the active illuminating layer of transparent ohmic contact layer below all can be luminous, cooperate the thickness of each platform structure, the design of size and shape again, make the active illuminating layer can only send the light of pattern, so light emitting diode can send high-intensity polarization light with particular polarization direction.Moreover, consult Figure 20, for the effect that promotes waveguide makes the light of propagating along the x axle increase, in the middle of light emitting diode, can add the structure of dbr structure layer 332.After the active illuminating layer 320 of electrode 306 belows is luminous, the structure of dbr structure layer 332 makes most light all propagate along the x axle, and the polarization direction of the light of propagating along the x axle is all on the y axle, when this light ray propagation during to photonic crystal region, photonic crystal can take out light and keep the polarised direction on its original y axle.Because the light of propagating along the x axle in platform structure increases, so also improve the polarization light intensity of light emitting diode.
Moreover, consult Figure 21, in order to improve light-emitting area to increase the light intensity that of light emitting diode, transparent ohmic contact layer 324 may extend to the surface of the upper strata dbr structure layer 332 of photonic crystal region.The active illuminating layer 320 of transparent ohmic contact layer 324 below all can be luminous, cooperate the thickness of each platform structure, the design of size and shape again, make active illuminating layer 320 can only send the light of pattern, so light emitting diode can send high-intensity polarization light with particular polarization direction.In addition, on the rightabout side of waveguide, can add reflection configuration,, reduce the light that scatters and disappears in the side thus, improve the light of on wave guide direction, propagating simultaneously as the photon crystal structure of a tool reflection characteristic.
Figure 22 illustrates according to the embodiment of the invention, light-emitting component device schematic perspective view.Consult Figure 22, in order to increase bigger light-emitting area, also increase simultaneously and get light quantity, present embodiment can be provided with the platform structure of a plurality of light emitting diodes 312 on substrate, and then reaches the light-emitting device of plane matrix.As for the structure of platform-type light emitting diode 312 as described above.
Generally speaking, because light is constantly when photonic crystal region is propagated, photon crystal structure can constantly take out the light of propagating in waveguiding structure, make light ray propagation extremely from light source local time far away more, the light intensity that photon crystal structure can take out will be weak more, and therefore the size of the photonic crystal region in platform structure needs suitable design.Add amount of light that need to consider chip integral body,, light intensity, cooperate the polarization bright dipping of each platform to obtain having the light emitting diode of the characteristic of polarization again to improve so on chip, form the structure of plane matrix.
After the characteristic of optics, the present invention is to dispose in a horizontal manner by the ray structure and the photon crystal structure of light emitting diode after deliberation, and the light of taking-up can have polarization effect.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (36)
1. the light-emitting component of a polarization comprises:
Substrate; And
The semiconductor stack stack structure on this substrate, comprises first area and second area at least, and wherein this second area comprises photon crystal structure, and this first area produces light source, and this light source row produces polarized light behind this photon crystal structure.
2. the light-emitting component of polarization as claimed in claim 1 also comprises:
First electrode layer and with the corresponding the second electrode lay of this first electrode layer to produce this light source.
3. the light-emitting component of polarization as claimed in claim 1, wherein this photon crystal structure is to constitute lattice pattern at the structural a plurality of crystal units of this semiconductor stack.
4. the light-emitting component of polarization as claimed in claim 3, wherein this lattice pattern comprises quadruple symmetry, sixfold symmetry, rectangle lattice, periodic arrangement structure, multiple periodicity arrangement architecture, quasi periodic structures or aperiodic structure.
5. the light-emitting component of polarization as claimed in claim 3, wherein the structure of this crystal unit comprises hole, column, taper, concavo-convex, discontinuous concavo-convex or in conjunction with wherein several structures continuously.
6. the light-emitting component of polarization as claimed in claim 3, the wherein polygon of the cross sectional form of this crystal unit, circle or oval.
7. the light-emitting component of polarization as claimed in claim 1, wherein this semiconductor stack stack structure comprises:
First conductive-type semiconductor layer;
The active illuminating layer is on this first conductive-type semiconductor layer;
Second conductive-type semiconductor layer is on this active illuminating layer; And
Ohmic contact layer is at least between this second conductive-type semiconductor layer and this first electrode layer.
8. the light-emitting component of polarization as claimed in claim 7, wherein this semiconductor stack stack structure also comprises at least one distributed Bragg reflecting layer, between this first conductive-type semiconductor layer and this substrate and the one between this second conductive-type semiconductor layer and this ohmic contact layer or both.
9. the light-emitting component of polarization as claimed in claim 1, wherein this photon crystal structure is a plurality of semiconductor column on this second area of this semiconductor stack stack structure, also can send light.
10. the light-emitting component of a polarization comprises:
Substrate; And
The semiconductor stack stack structure on this substrate, comprises a plurality of strip regions, wherein comprises at least one photon crystal structure between this strip region, wherein works as the light source row that is produced and produce polarized light behind this photon crystal structure.
11. the light-emitting component of polarization as claimed in claim 10, wherein this semiconductor stack stack structure also comprises:
A plurality of first electrode strip layers are on each this strip region of this semiconductor stack stack structure; And
At least one second electrode strip layer, at this semiconductor stack stack structure and between this photon crystal structure, corresponding to produce this light source with this first electrode strip layer.
12. the light-emitting component of polarization as claimed in claim 10, wherein this photon crystal structure is to constitute lattice pattern at the structural a plurality of crystal units of this semiconductor stack.
13. the light-emitting component of polarization as claimed in claim 12, wherein this lattice pattern comprises quadruple symmetry, sixfold symmetry, rectangle lattice, periodic arrangement structure, multiple periodicity arrangement architecture, quasi periodic structures or aperiodic structure.
14. the light-emitting component of polarization as claimed in claim 12, wherein the structure of this crystal unit comprises hole, column, taper, concavo-convex, discontinuous concavo-convex or in conjunction with wherein several structures continuously.
15. the light-emitting component of polarization as claimed in claim 12, the wherein polygon of the cross sectional form of this crystal unit, circle or oval.
16. the light-emitting component of polarization as claimed in claim 10, wherein this semiconductor stack stack structure comprises:
First conductive-type semiconductor layer;
The active illuminating layer is on this first conductive-type semiconductor layer;
Second conductive-type semiconductor layer is on this active illuminating layer; And
Ohmic contact layer is at least between this second conductive-type semiconductor layer and this first electrode strip layer.
17. the light-emitting component of polarization as claimed in claim 16, wherein this semiconductor stack stack structure also comprises at least one distributed Bragg reflecting layer, between this first conductive-type semiconductor layer and this substrate and the one between this second conductive-type semiconductor layer and this ohmic contact layer or both.
18. the light-emitting component of polarization as claimed in claim 10, wherein this photon crystal structure is in the structural a plurality of semiconductor column of this semiconductor stack, also can send light.
19. the light-emitting component of a polarization comprises:
Substrate; And
The semiconductor stack stack structure, on this substrate, wherein this semiconductor stack stack structure comprises at least one outstanding block layer, comprises photon crystal structure on this outstanding block layer, and wherein the light source row that is produced produces polarized light behind this photon crystal structure.
20. the light-emitting component of polarization as claimed in claim 19 also comprises:
First electrode layer; And
With the corresponding the second electrode lay of this first electrode layer, to produce this light source.
21. the light-emitting component of polarization as claimed in claim 19, wherein this photon crystal structure is to constitute lattice pattern at the structural a plurality of crystal units of this semiconductor stack.
22. the light-emitting component of polarization as claimed in claim 21, wherein this lattice pattern comprises quadruple symmetry, sixfold symmetry, rectangle lattice, periodic arrangement structure, multiple periodicity arrangement architecture, quasi periodic structures or aperiodic structure.
23. the light-emitting component of polarization as claimed in claim 21, wherein the structure of this crystal unit comprises hole, column, taper, concavo-convex, discontinuous concavo-convex or in conjunction with wherein several structures continuously.
24. the light-emitting component of polarization as claimed in claim 21, the wherein polygon of the cross sectional form of this crystal unit, circle or oval.
25. the light-emitting component of polarization as claimed in claim 19, wherein this semiconductor stack stack structure comprises:
First conductive-type semiconductor layer;
The active illuminating layer is on this first conductive-type semiconductor layer;
Second conductive-type semiconductor layer is on this active illuminating layer; And
Ohmic contact layer is at least between this second conductive-type semiconductor layer and this first electrode layer.
26. the light-emitting component of polarization as claimed in claim 25, wherein this semiconductor stack stack structure also comprises at least one distributed Bragg reflecting layer, between this first conductive-type semiconductor layer and this substrate and the one between this second conductive-type semiconductor layer and this ohmic contact layer or both.
27. the light-emitting component of polarization as claimed in claim 19, wherein this photon crystal structure is a plurality of semiconductor column, also can be luminous individually.
28. the light-emitting component of a polarization comprises:
Substrate; And
The semiconductor stack stack structure is on this substrate, wherein this semiconductor stack stack structure comprises a plurality of outstanding block layer forming array distributions, each should comprise photon crystal structure on the outstanding block layer, wherein works as the light source row that is produced and produce polarized light behind this photon crystal structure.
29. the light-emitting component of polarization as claimed in claim 28 also comprises:
First electrode layer should be given prominence on the block layer at each; And
The second electrode lay is positioned at the edge of this outstanding block layer on this semiconductor stack stack structure, corresponding with this first electrode layer, to produce this light source.
30. the light-emitting component of polarization as claimed in claim 28, wherein this photon crystal structure is to constitute lattice pattern at the structural a plurality of crystal units of this semiconductor stack.
31. the light-emitting component of polarization as claimed in claim 30, wherein this lattice pattern comprises quadruple symmetry, sixfold symmetry, rectangle lattice, periodic arrangement structure, multiple periodicity arrangement architecture, quasi periodic structures or aperiodic structure.
32. the light-emitting component of polarization as claimed in claim 30, wherein the structure of this crystal unit comprises hole, column, taper, concavo-convex, discontinuous concavo-convex or in conjunction with wherein several structures continuously.
33. the light-emitting component of polarization as claimed in claim 30, the wherein polygon of the cross sectional form of this crystal unit, circle or oval.
34. the light-emitting component of polarization as claimed in claim 28, wherein this semiconductor stack stack structure comprises:
First conductive-type semiconductor layer;
The active illuminating layer is on this first conductive-type semiconductor layer;
Second conductive-type semiconductor layer is on this active illuminating layer; And
Ohmic contact layer is at least between this second conductive-type semiconductor layer and this first electrode layer.
35. the light-emitting component of polarization as claimed in claim 34, wherein this semiconductor stack stack structure also comprises at least one distributed Bragg reflecting layer, between this first conductive-type semiconductor layer and this substrate and the one between this second conductive-type semiconductor layer and this ohmic contact layer or both.
36. the light-emitting component of polarization as claimed in claim 28, wherein this photon crystal structure is a plurality of semiconductor column, also can be luminous individually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101936894A CN101441297A (en) | 2007-11-22 | 2007-11-22 | Polarization luminous element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101936894A CN101441297A (en) | 2007-11-22 | 2007-11-22 | Polarization luminous element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101441297A true CN101441297A (en) | 2009-05-27 |
Family
ID=40725810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101936894A Pending CN101441297A (en) | 2007-11-22 | 2007-11-22 | Polarization luminous element |
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| Country | Link |
|---|---|
| CN (1) | CN101441297A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047784A (en) * | 2010-07-13 | 2015-11-11 | 乐金显示有限公司 | Light emitting diode, method of fabricating the same, and liquid crystal display |
| CN112310254A (en) * | 2019-07-29 | 2021-02-02 | 隆达电子股份有限公司 | Light emitting assembly |
-
2007
- 2007-11-22 CN CNA2007101936894A patent/CN101441297A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047784A (en) * | 2010-07-13 | 2015-11-11 | 乐金显示有限公司 | Light emitting diode, method of fabricating the same, and liquid crystal display |
| CN105047784B (en) * | 2010-07-13 | 2018-04-27 | 乐金显示有限公司 | Light emitting diode and its manufacture method and the liquid crystal display for including it |
| CN112310254A (en) * | 2019-07-29 | 2021-02-02 | 隆达电子股份有限公司 | Light emitting assembly |
| CN112310254B (en) * | 2019-07-29 | 2022-08-02 | 隆达电子股份有限公司 | Light emitting assembly |
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Open date: 20090527 |