CN101438302A - Method and device for transmitting data by charge modulation - Google Patents
Method and device for transmitting data by charge modulation Download PDFInfo
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- CN101438302A CN101438302A CNA2007800162199A CN200780016219A CN101438302A CN 101438302 A CN101438302 A CN 101438302A CN A2007800162199 A CNA2007800162199 A CN A2007800162199A CN 200780016219 A CN200780016219 A CN 200780016219A CN 101438302 A CN101438302 A CN 101438302A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
- G06K19/0713—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management the arrangement including a power charge pump
Abstract
Contactless data transmission device (DV1) comprising an antenna circuit (ACT) supplying AC voltage (VA1) in the presence of an alternating excitation field (FLD), and a charge modulation transistor (SW) having a control terminal receiving a charge modulation signal having at least one low state and one high state, and a conduction terminal receiving the AC voltage (VA1). According to the invention, the device includes means (BCT) for supplying a DC overvoltage (Vppl) greater than a peak value of the alternating voltage (VA1) supplied by the antenna circuit, and means (VCT) for applying a charge modulation signal (Slm2) to the control terminal of the charge modulation transistor (SW) which, in the high state, has a voltage level equal to the DC overvoltage (Vppl).
Description
Technical field
The present invention relates to transmit the method for data by the electric charge modulation, and in order to implement the device that this transmits data method.
The invention particularly relates to non-contact data conveyer by induction coupling or radio-frequency (RF) identification (Radio Frequency Identification, RFID) device, the device of being put down in writing with the ISO/IEC15693 standard as ISO/IEC 14443.The invention particularly relates to the non-contact data conveyer of passive type, it can take out supply voltage from the AC signal that its antenna circuit is supplied.
Background technology
Fig. 1 is for providing the basic synoptic diagram of tradition with the passive type non-contact data conveyer DV0 that sends data by induction coupling and electric charge modulation.For for purpose of brevity, below this device is called " non-contact device ".Device DV0 comprises modulated antenna circuit ACT, electric charge modulation transistor SW and data transfer circuit DSCT.The capacitor Ca that antenna circuit ACT comprises aerial coil La and is parallel to aerial coil.
Electric charge modulation transistor SW is a MOS transistor at this, second conduction terminal (drain electrode) that has first conduction terminal (source electrode) of the terminal T1 that is connected to antenna circuit and be connected to the terminal T2 of antenna circuit.Commutation diode Dr is connected between the ground connection (GND) of terminal T1 and device.Smmothing capacitor Cs and Zener diode DZ are connected between the terminal T2 and ground connection of antenna circuit abreast.
Non-contact device DV0 is by equaling or starting near the magnetic field FLD of the frequency of operation place of antenna circuit modulating frequency vibration.Magnetic field FLD is launched by for example reader RD1, and reader RD1 emission magnetic field FLD end is provided with aerial coil Lr, and will be applied to aerial coil Lr in the pumping signal of frequency of operation place vibration.Observe aforementioned iso standard the frequency of operation of device can be for example 13.56 MHz (MHz).
Because the induction coupling phenomenon exchanges the aerial coil La that aerial signal appears at device DV0.This aerial signal causes signal VA1 to appear at the terminal T1 of antenna circuit and the terminal T2 that signal VA2 appears at antenna circuit.
With regard to the ground connection of device DV0, signal VA1 is that half-wave rectification AC signal and signal VA2 are almost by capacitor Cs smooth adjustment and by the direct current signal of diode DZ amplitude limit.Device DV0 is almost passive in this hypothesis, use the direct current supply voltage vcc of rectified signal VA1 as data transfer circuit DSCT.
The basic framework of this non-contact device allows to make a plurality of contactless portable electronic item, for example noncontact chip card, contactless identification mark, electronic tag etc.
For transmitting data DTx to reader RD1, device DSCT is applied to transistor SW with a scale-of-two electric charge modulation signal Slm1, scale-of-two electric charge modulation signal Slm1 produces according to data DTx, and data DTx is encoded according to predetermined coding protocol (NRZ, Manchester, BPSK etc.) usually.When signal Slm1 is " 1 ", it equals or is same as voltage vcc (ignoring the consume of circuit DSCT intercommunication element) in fact.Transistor SW so conducting and have fixed resistance in series (drain source resistance, RDson).Therefore antenna circuit is generally resistive short about hundreds of ohm (Ohms) by this.The impedance that the effect of short circuit (partial short circuit, resistance in series does not equal zero) is to modulate antenna circuit, and this modulation impedance is coupling in by induction in the aerial signal of reader RD1 and transmits.By the adaptive filtering circuit, therefore reader can take out modulation signal from its aerial signal that has, and after rectification and decoding, derives the data DTx that device DV0 is transmitted from aerial signal.
Fig. 2 A is depicted as between the electric charge modulation period that is distributed between two time point t1 and t2, when transistor SW is blocked the waveform of signal VA1 and when transistor SW conducting the waveform of signal VA1.Fig. 2 A also illustrates the waveform of supply voltage vcc.Fig. 2 B is depicted as electric charge modulation signal Slm1, and it is " 1 " (Vcc, high state) between time point t1 and t2, and is " 0 " (ground connection, low state) outside between the electric charge modulation period.
Outside between the electric charge modulation period, the amplitude maximum of signal VA1 and signal VA1 equal at peak value VA1max and absolute value to vibrate between negative minimum value-Vd of critical voltage Vd of commutation diode Dr.The supply voltage vcc is similarly maximum.Between the electric charge modulation period that is distributed between two time point t1 and t2, the peak value of signal VA1 reduces in fact and the value of being no more than VA1min, and the supply voltage vcc also reduces.The impedance modulation of reader RD1 antenna circuit that the Modulation and Amplitude Modulation of magnetic field FLD and response will be installed the antenna circuit short circuit of DV0 causes this two kinds of phenomenons.
The advantage of this non-contact device structure is electric charge depth of modulation (being amplitude), i.e. poor between the VA1min of amplitude VA1max and AC signal VA1 is relatively low and keep the reception of electric energy between modulation period.
Yet this advantage need become shortcoming in the application that increases communication distance between reader RD1 and non-contact device DV0 than the large charge depth of modulation at some.In fact, the detected electric charge modulation signal of reader RD1 amplitude also is the function of distance between reader RD1 and non-contact device DV0: communication distance is long more, because the induction coupling is lower, can be poor more so be mixed to the electric charge modulation signal image of reader antenna signal.In these situations, can only increase communication distance by increasing the electric charge depth of modulation.Be to measure the influence of electric charge modulation in the reader, the variation of selecting set a distance reader/device to measure antenna current i in the reader.Carry out the measurement that electric current changes by voltage V (i) being imposed on resistance in series.Do not change V (i) min if reach minimum voltage, then depth of modulation is considered as deficiency.
Summary of the invention
The objective of the invention is to allow to increase the electric charge depth of modulation and can not be unfavorable for the means that energy receives, and energy receives for supply voltage vcc and supplies with complete passive non-contact device or be supplied to additional feed voltage partly that passive non-contact device is important in unacceptable mode.
Reaching this purpose can be by providing a kind of non-contact data conveyer, it comprises the antenna circuit of supply alternating voltage when having ac-excited, have control terminal and have the electric charge modulation transistor of electric charge modulation signal of at least one low state and a high state and the conduction terminal that receives alternating voltage with reception, this device comprises delivery member, it supplies the DC boosting voltage of the alternating voltage peak of supplying greater than antenna circuit: and apply member, it is applied to the control terminal of electric charge modulation transistor with an electric charge modulation signal, and the electric charge modulation signal has the voltage level that is same as DC boosting voltage when high state.
According to an example, described device comprises the booster circuit of the alternating voltage supply DC boosting voltage of supplying from antenna circuit.
According to an example, described device comprises that the alternating voltage of supplying from antenna circuit produces the generation member of non-DC boosting voltage, and the booster circuit of supplying DC boosting voltage from non-DC boosting voltage.
According to an example, described device comprises the voltage adaptation circuit, has the second electric charge modulation signal of the voltage level that is same as DC boosting voltage in high state the time with the first electric charge modulation signal transitions that will have non-booster voltage level when the high state.
According to an example, described booster circuit comprises at least one charging pump stage.
According to an example, charge pump is also supplied the voltage in order to electric erasable of wiping or programming and programmable storage.
According to an example, the alternating voltage that charge pump receiving antenna circuit is supplied is with as the pump signal.
According to an example, the electric charge modulation transistor is a MOS transistor.
According to an example, antenna circuit comprises the aerial coil of supply alternating voltage when having AC magnetic field.
According to an example, first terminal of antenna circuit is connected to a terminal of commutation diode, and another terminal of commutation diode receives a reference potential; Second terminal of antenna circuit is connected to a terminal of smmothing capacitor, and another terminal of smmothing capacitor receives reference potential; There is first terminal of antenna circuit in alternating voltage; Second terminal of antenna circuit has the commutating voltage that is relevant to reference potential; And modulation transistor receives commutating voltage on first conduction terminal and the alternating voltage on another conduction terminal.
The invention still further relates to a kind of portable electronic object, particularly chip card or electronic tag that comprises according to device of the present invention.
The invention still further relates to a kind of non-contact data transfer approach of reaching by the electric charge modulation, this method comprises: the antenna circuit that supply alternating voltage when having ac-excited is provided; The electric charge modulation transistor is provided, it has the conduction terminal of the alternating voltage that the terminal that is connected to antenna circuit and receiving antenna circuit supplied, generation is greater than the DC boosting voltage of alternating voltage peak: and the control terminal that the electric charge modulation signal is applied to the electric charge modulation transistor, the electric charge modulation signal has at least one low state and a high state, and has the voltage level that is same as DC boosting voltage when high state.
According to an example, the alternating voltage of supplying from antenna circuit produces DC boosting voltage.
According to an example, the non-DC boosting voltage of supplying from antenna circuit that alternating voltage produced produces DC boosting voltage.
According to an example, described method comprises: the first electric charge modulation signal that has non-booster voltage level when being provided at high state; With the first electric charge modulation signal transitions for having the second electric charge modulation signal of the voltage level that is same as DC boosting voltage when the high state; And the control terminal that the second electric charge modulation signal is applied to modulation transistor.
According to an example, use at least one charging pump stage to produce booster voltage.
According to an example, also use charge pump to produce in order to the electric erasable wiping or programme and the voltage of programmable storage.
According to an example, the alternating voltage that the use antenna circuit is supplied is as the pump signal of charge pump.
According to an example, use MOS transistor as the electric charge modulation transistor.
According to an example, antenna circuit comprises the aerial coil of supply alternating voltage when having AC magnetic field.
According to an example, described method comprises: a terminal that first terminal of antenna circuit is connected to commutation diode; One reference potential is applied to another terminal of commutation diode; Second terminal of antenna circuit is connected to a terminal of smmothing capacitor; Described reference potential is applied to another terminal of smmothing capacitor; Cause first terminal of antenna circuit to present alternating voltage, and second terminal of antenna circuit present the commutating voltage that is relevant to reference potential; And commutating voltage is applied on the conduction terminal of modulation transistor and and is applied on transistorized another conduction terminal alternating voltage.
Description of drawings
Above-mentioned and other purpose of the present invention, advantage and feature will more at large be disclosed in the following narration of a plurality of examples according to the present invention, and it will cooperate but be not limited to the following drawings is narrated, wherein:
The aforementioned traditional structure that Figure 1 shows that the non-contact data conveyer;
Earlier figures 2A is depicted as when having ac-excited signal, appears at the signal in Fig. 1 device;
Earlier figures 2B is depicted as the conventional charge modulation signal;
Fig. 3 is the isoboles of electric charge modulation switch between the electric charge modulation period;
Figure 4 shows that the mutual conductance function of Fig. 3 electric charge modulation switch;
Figure 5 shows that general structure according to non-contact data conveyer of the present invention;
Fig. 6 is for existing the isoboles of the electric charge modulation switch in Fig. 5 device between the electric charge modulation period;
Fig. 7 A is depicted as when having ac-excited, appears at the signal in Fig. 5 device;
Fig. 7 B is depicted as according to electric charge modulation signal of the present invention;
Figure 8 shows that first example of Fig. 5 device;
Figure 9 shows that and have the pump structure that charges in Fig. 8 device;
Figure 10 shows that second example of Fig. 5 device;
Figure 11 shows that and have the pump structure that charges in Figure 10 device;
Figure 12 shows that the 3rd example of Fig. 5 device;
Figure 13 shows that and have the pump structure that charges in Figure 12 device;
Figure 14 shows that the 4th example of Fig. 5 device;
Figure 15 shows that and have the pump structure that charges in Figure 14 device; And
Figure 16 shows that the portable object that is provided with according to non-contact data conveyer of the present invention.
Embodiment
As above-mentioned, the objective of the invention is to allow in the non-contact data conveyer of type shown in Figure 1, increase the electric charge depth of modulation, and can not be unfavorable for the means that energy receives in unacceptable mode, and energy to receive for supply passive or half passive device of voltage vcc supply (having unsteady energy source) be important.
For reaching this purpose, the present invention at first by transistor SW shown in Figure 1 based on the analysis of electric charge modulation scheme.Fig. 3 is for when electric charge modulation signal Slm1 equals 1, i.e. voltage vcc (Fig. 2 B), the isoboles of transistor SW between the electric charge modulation period.Transistor receives voltage vcc at its control terminal (is gate terminal at this), and receive voltage vcc (VA2) at a conduction terminal (is its drain terminal at this), and receive the half-wave rectification alternating voltage VA1 of waveform shown in Fig. 2 A at its another conduction terminal (is its source terminal at this).As if transistorized gate terminal have same potential with its drain terminal.Transistor isoboles shown in Figure 3 thereby comprise the circuit that connects gate terminal and drain terminal.Transistor as operation (saturated) and its mutual conductance functional schema as the diode in Fig. 4, wherein Vds is transistor drain-source voltage, Ids is the transistor drain-source current of flowing through, Vt is transistorized critical voltage, the drain source resistance when RDSon is in conducting state for it.Transistor for will conducting must reach following condition:
Vcc-Vt>VA1
That is:
VA1<Vcc-Vt
Therefore, when alternating voltage was lower than Vcc-Vt, transistor SW was conducting, and was blocked in opposite condition following time.Therefore the effective charge modulation areas reduces and is dispersed between the curve Vcc-Vt shown in Fig. 2 A and the straight line-Vd.In other words, when signal VA1 changed between-Vd and VA1min, the electric charge modulation transistor was conducting being lower than Vcc-Vt as VA1, and is blocked when VA1 becomes greater than Vcc-Vt, and became when being lower than Vcc-Vt conducting once again etc. at VA1.Can therefore observe replacing fast between transistor turns state and blocking state.
Cause adverse effect for obtaining energy not being received than the large charge depth of modulation, the present invention proposes and will be applied to transistorized gate terminal greater than the DC voltage of the maximum peak voltage VA1max of alternating voltage VA1.Under these conditions, transistor no longer is set to diode and is lasting conducting between the electric charge modulation period.
Figure 5 shows that according to non-contact data conveyer DV1 of the present invention.Device DV1 comprises all elements of aforementioned means DV0, and with the same reference numeral mark.Therefore antenna circuit ACT, the commutation diode Dr that is connected to the terminal T1 of antenna circuit, the smmothing capacitor Cs and the limiter diode DZ that is connected to the terminal T2 of antenna circuit that comprise coil La and capacitor Ca arranged, be connected the electric charge modulation transistor SW between terminal T1 and T2, and go up the data transfer circuit DSCT that is close to DC voltage VA2 (use) driving as supplying voltage vcc by terminal T2.Suppose herein and Fig. 8,10,12,14 of explanation subsequently in, device according to the present invention is present among the AC magnetic field FLD that reader RD1 shown in Figure 1 launched, so not explanation separately in this figure.
According to the present invention, device DV1 comprises booster circuit BCT and voltage adaptation circuit VCT in addition.Booster circuit BCT is between the electric charge modulation period, and suppling signal VA1 may have the voltage Vpp1 greater than peak value VA1max.Circuit VCT is driven and is received the electric charge modulation signal Slm1 by data transfer circuit DSCT supply by voltage Vpp1.As described above, the high level of signal Slm1 corresponding voltage Vcc (ignore circuit DSCT communication device consume) in fact.Circuit VCT is transformed into electric charge modulation signal Slm2 with signal Slm1.The logic lock that circuit VCT can be the voltage breakout box (for example with coupling amplifier (follower amplifier)) of any type known, driven by voltage Vpp1, trigger or the bistable state that drives by voltage Vpp1 etc.
Therefore, voltage vcc is formed signal Slm2 but the high level of this signal is by voltage Vpp1 by the reflection of signal Slm1.The low level of the signal Slm2 preferably low level with signal Slm1 is identical, and is earthing potential (GND) at this.As shown in Figure 6, therefore transistor is in the linear operation state, and its grid voltage Vpp1 is always greater than its drain electrode-source voltage (Vcc-VA1).When signal Slm2 equaled 1 (Vpp1), transistor continued conducting.
Fig. 7 A is depicted as between the electric charge modulation period that is distributed between two time point t1 and t2, signal VA1 and voltage vcc, and Fig. 7 B is depicted as the waveform of electric charge modulation signal Slm2, and it equals Vpp1 between time point t1 and t2.Comparison diagram 7A and Fig. 2 A can find out that AC signal VA1 is at the critical voltage-Vd of diode and be starkly lower than vibration between the crest voltage VA1min ' of crest voltage VA1min among Fig. 2 A.Yet, energy receives and not to be inconsistent the increase that expectedly is subjected to the electric charge depth of modulation and to have and influence slightly, and concerning identical current sinking, the supply voltage vcc is subject to and reduces the very identical influence that reduces (Fig. 2 A and Fig. 7 A are depicted as the energy that the electric energy that supply line consumed that is loaded with voltage vcc is lower than taking-up, and voltage vcc reaches the situation of a lower flat) shown in Fig. 2 A.The result of the true contradiction of this accident and obvious and increase electric charge depth of modulation can be explained, in brief, when the amplitude of signal AC1 during greater than Vcc-Vt, transistor is conducting but not is blocked that in fact electric energy is sent to the terminal T2 (terminal provisioning Vcc) of antenna circuit by transistor.Really, between the electric charge modulation period, the electric charge modulation transistor is operation but be equivalent to resistance as the diode for another example not.
In fact, can produce the voltage Vpp1 that booster circuit BCT is supplied in the following manner:
1) if device is half active formula (partly passive), the voltage of being supplied by the local voltage source that boosts (for example battery) then,
2) if device is complete passive type, voltage vcc of supplying by the antenna circuit that boosts or one of them of signal VA1, VA2, if rectification is not to carry out in the terminal of antenna circuit, then signal VA2 may be for exchanging (for example in the situation of the full-wave rectification performed by diode bridge).
Shown in Fig. 8,10,12 and 14 according to the example of complete passive type non-contact device DV2 of the present invention, DV3, DV4, DV5 with individually explanation hereinafter.
Non-contact device DV2 shown in Figure 8 comprises that supply voltage Vpp1 gives the charge pump PMP1 of voltage adaptation circuit VCT.Charge pump is driven by voltage vcc and receives two opposite pump signal IN1, IN2 of phase place that supplied with oscillator OSC at input end.Oscillator is preferably very simply to reach the low cost manufacturing.For example by the formed ring oscillator of the anti-phase lock of a succession of odd number, the output of last lock is connected to the input of first lock.When modulation signal Slm2 must be applied to modulation switch SW, the signal ON1 that data transfer circuit DSCT is supplied started oscillator.
As shown in Figure 9, charge pump PMP1 can comprise pump stage ST1, the ST2 of for example two series connection and comprise diode D5 and the output stage of capacitor C5.Level ST1 comprises two diode D1, D2 and two capacitor C1, C2.Level ST2 comprises two diode D3, D4 and two capacitor C3, C4.Diode D1 receives voltage vcc on its anode and its negative electrode is connected to the anode of capacitor C1 and the anode of diode D2.The negative electrode of diode D2 is connected to the anode of capacitor C2 and the anode of diode D3.The negative electrode of diode D3 is connected to the anode of capacitor C3 and the anode of diode D4.The negative electrode of diode D4 is connected to the anode of capacitor C4 and the anode of diode D5.The negative electrode of diode D5 is connected to anode and the supply voltage Vpp1 of capacitor C5.The negative electrode of capacitor C5 is connected to ground, and the negative electrode that the negative electrode of capacitor C1, C3 receives pump signal H1 and capacitor C2, C4 receives pump signal H2.
Equal 5 volts for voltage vcc, and the pump signal has the low level that equals 5 volts high level and equal 0 volt, voltage Vpp1 can for example be from 12 to 13 volts.
Non-contact device DV3 shown in Figure 10 comprises in order to voltage Vpp1 is applied to the charge pump PMP2 of voltage adaptation circuit VCT.Charge pump is driven by voltage vcc and is received from the half-wave AC signal VA1 that antenna circuit terminal T1 obtains at input end IN1, and its another pump input IN2 is connected to ground.
Charge pump PMP2 can make as shown in figure 11.It only comprises the single pump stage ST1 identical with charge pump PMP1.Diode D1 is connected to the anode of capacitor C1 and the anode of diode D2 at its anode reception voltage vcc and its negative electrode.The negative electrode of diode D2 is connected to the anode of capacitor C2 and supplies voltage Vpp1.The negative electrode that the negative electrode of capacitor C1 receives AC signal VA1 and capacitor C2 is connected to ground.Equal 5 volts for voltage vcc, and pump signal VA1 has about 8 to 10 volts of amplitudes, voltage Vpp1 can for example be from 12 to 13 volts.
Non-contact device DV4 shown in Figure 12 comprises microprocessor or the wired logic control circuit CCT that replaces circuit DSCT, provides to carry out the high level command that reader RD1 (with reference to Fig. 1) is transmitted.Control circuit CCT is provided with electric erasable and programmable storage MEM (EEPROM), and instruction is the instruction that for example is used to write or read storer, anti-collision instruction, recognition instruction etc.Device DV4 comprises demodulation circuit DEMCT equally, and demodulation circuit DEMCT has the input that is connected to antenna circuit terminal T1, and supplies the output that is transmitted data DTr by modulated magnetic field FLD amplitude by reader RD1.Above-mentioned data DTr obtains from exchanging among the signal VA1 by there being the filtering circuit in the demodulator, and allows to take out by the carrier in compression magnetic field the envelope of this signal.Control circuit CCT can be subsequently with the data and the envelope decoding of taking out.Data DTr forms above-mentioned instruction and can comprise the application data that desire is handled, and particularly wants the data of write store MEM.
Charge pump PMP3 provides to supply about 12 to 15 volts high pressure Vpp2 to wipe and programmable memory MEM.Charge pump PMP3 receives pump signal H1, the H2 that the oscillator OSC similar to aforementioned oscillator supplied at input IN1, IN2, and is started by the signal ON1 that control circuit CCT is supplied.Charge pump can equally advantageously be used for the voltage Vpp1 of supplies charges modulation signal Slm2.
As shown in figure 13, charge pump PMP3 can comprise for example three series connection pump stage ST1, ST2 and ST3, comprise first output stage of diode D5 and capacitor C5 and comprise diode D6 and second output stage of capacitor C6.Level ST1, the ST2 and first output stage are provided with to be relevant to content shown in Figure 9, and form the equivalence of pump PMP1, the negative electrode supply voltage Vpp1 of diode D5.Level ST3 is provided with and connects with level ST2 and its output is connected to the anode of diode D6, and the negative electrode of diode D6 is supplied voltage Vpp2 and is connected to the anode of capacitor C6, and the negative electrode of capacitor C6 is connected to ground.
Non-contact device DV5 shown in Figure 14 only is similar in appearance to device DV4 and its difference that it comprises receiving and takes from antenna circuit terminal T1 and as the charge pump PMP4 of the AC signal VA1 of pump signal.Signal VA1 is applied to the input IN1 of charge pump and the input IN2 of charge pump is connected to ground.
Charge pump PMP4 comprises two pump stage ST1, ST2 of series connection, and it is activated (Figure 11) in this as the pump stage ST1 of charge pump PMP2.Therefore, in level ST1, diode D1 is connected to the anode of capacitor C1 and the anode of diode D2 at its anode reception voltage vcc and its negative electrode.The negative electrode of diode D2 is connected to the anode of capacitor C2 and supplies voltage Vpp1.The negative electrode that the negative electrode of capacitor C1 receives AC signal VA1 and capacitor C2 is connected to ground.In level ST2, the anode of diode D3 is connected to the negative electrode of diode D2 among grade ST1, and receives voltage Vpp1.The negative electrode of diode D3 is connected to the anode of capacitor C3 and the anode of diode D4.The negative electrode of diode D4 is connected to the anode of capacitor C4 and supplies voltage Vpp2.The negative electrode that the negative electrode of capacitor C3 receives AC signal VA1 and capacitor C2 is connected to ground.
Person of ordinary skill in the field the present invention as can be known can have other a plurality of examples.
Particularly,, can use two signals to carry out pump and charge as pump signal H1, H2 if signal VA1, VA2 be all interchanges (by the diode bridge full-wave rectification), and with the input grounding of charge pump.In addition, to such an extent as to the electric charge modulation transistor can have very low or cross the low series resistance that is not enough to modulate the electric charge of antenna circuit at least.In the case, loaded impedance (resistance, capacitor ...) can be set up with modulation transistor and connect.When the electric charge modulation transistor was conducting, loaded impedance was carried out the electric charge modulation of antenna circuit, and the electric charge modulation transistor can be used as simple switch under this situation.
Voltage adaptation circuit VCT can be similarly a negater circuit.In this situation, signal Slm2 is the phase anti-graphics of signal Slm1 and is positioned at high level, i.e. voltage Vpp1, and this moment, signal Slm1 was positioned at low level.
The present invention can have multiple application equally.Device DV2, DV3 are simple conveyer and the portable noncontact object that can make label type or recognition type, with according to the data that write among the determined time interval transfer circuit DSCT.Device DV4, DV5 can receive and carry out the instruction that is used to write and read its storer, and allow to make the multiple portable noncontact object as noncontact chip card, no-contact electronic mark, non-contact electronic lable etc.Usually be set in the support that receives semi-conductor chip or on the support except aerial coil, or be set on the actual chips outside (coil on chip, chip coil), the multiple element of constituent apparatus DV1 to DV5 is integrated into semi-conductor chip usually.
For instance, electronic tag TG shown in Figure 16 comprises the semi-conductor chip 12 of one element of substrate 10, aerial coil 11, the integrating apparatus DV1 to DV5 of insulation material (paper, sheet etc.).Aerial coil 11 is made by ink-jet or etched conductors material.The inside surface of chip 12 comprises the electrical pickoff (not shown) that connects terminal 11-1,11-2 of aerial coil.
The present invention is not limited to inductively coupled circuit and can be widely applied to any device that antenna circuit is set, and receives the induction AC signal that allows to produce supply voltage.The present invention especially can be applicable to have the electric coupling noncontact circuit of design with the antenna circuit of reception electric field UHF, and it is when transmitting data, and the impedance of modulating its antenna circuit is with the modulation reflection coefficient.
Preferred embodiment of the present invention and effect thereof have more than been described; certainly; the present invention also can have other embodiment; under the situation that does not deviate from spirit of the present invention and essence; the person of ordinary skill in the field works as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of claim of the present invention.
Claims (21)
1, a kind of non-contact data conveyer, it comprises the antenna circuit that there is supply alternating voltage when ac-excited, have control terminal has the electric charge modulation transistor of electric charge modulation signal of at least one low state and a high state and the conduction terminal that receives alternating voltage with reception, this device comprises:
Delivery member, it supplies the DC boosting voltage of the alternating voltage peak of supplying greater than antenna circuit: and
Apply member, it is applied to the control terminal of electric charge modulation transistor with the electric charge modulation signal, and the electric charge modulation signal has the voltage level that is same as DC boosting voltage when high state.
2, device according to claim 1 is characterized in that, comprises the booster circuit of the alternating voltage supply DC boosting voltage of supplying from antenna circuit.
3, device according to claim 1 is characterized in that, comprises that the alternating voltage of supplying from antenna circuit produces the generation member of non-DC boosting voltage, and the booster circuit of supplying DC boosting voltage from non-DC boosting voltage.
4, according to each the described non-contact data conveyer in the claim 1 to 3, it is characterized in that, comprise the voltage adaptation circuit, have the second electric charge modulation signal of the voltage level that is same as DC boosting voltage with the first electric charge modulation signal transitions that will have non-booster voltage level when the high state in high state the time.
According to claim 2 or 3 described non-contact data conveyers, it is characterized in that 5, booster circuit comprises at least one charging pump stage.
6, non-contact data conveyer according to claim 5 is characterized in that, charge pump is also supplied the voltage in order to wipe or programme electric erasable and programmable storage.
According to claim 5 or 6 described non-contact data conveyers, it is characterized in that 7, the alternating voltage that charge pump receiving antenna circuit is supplied is with as the pump signal.
8, according to each the described non-contact data conveyer in the claim 1 to 7, it is characterized in that the electric charge modulation transistor is a MOS transistor.
According to each the described non-contact data conveyer in the claim 1 to 8, it is characterized in that 9, antenna circuit comprises the aerial coil of supply alternating voltage when having AC magnetic field.
10, according to each the described non-contact data conveyer in the claim 1 to 9, it is characterized in that:
First terminal of antenna circuit is connected to a terminal of commutation diode, and another terminal of commutation diode receives a reference potential;
Second terminal of antenna circuit is connected to a terminal of smmothing capacitor, and another terminal of smmothing capacitor receives described reference potential;
There is first terminal of antenna circuit in alternating voltage;
Second terminal of antenna circuit has the commutating voltage that is relevant to reference potential; And
Modulation transistor receives commutating voltage on first conduction terminal and the alternating voltage on another conduction terminal.
11, a kind of portable electronic object, particularly chip card or electronic tag that comprises according to each the described device in the claim 1 to 10.
12, a kind of non-contact data transfer approach of reaching by the electric charge modulation, this method comprises:
The antenna circuit of supply alternating voltage when having ac-excited is provided;
The electric charge modulation transistor is provided, and it has the conduction terminal of the alternating voltage that the terminal that is connected to antenna circuit and receiving antenna circuit supplied, and this method comprises:
Generation is greater than the DC boosting voltage of alternating voltage peak: and
The electric charge modulation signal is applied to the control terminal of electric charge modulation transistor, and the electric charge modulation signal has at least one low state and a high state, and has the voltage level that is same as DC boosting voltage when high state.
13, method according to claim 12 is characterized in that, the alternating voltage of supplying from antenna circuit produces DC boosting voltage.
14, method according to claim 12 is characterized in that, the non-DC boosting voltage of supplying from antenna circuit that alternating voltage produced produces DC boosting voltage.
15, according to each the described method in the claim 12 to 14, it is characterized in that comprising:
The first electric charge modulation signal that has non-booster voltage level when being provided at high state;
With the first electric charge modulation signal transitions for having the second electric charge modulation signal of the voltage level that is same as DC boosting voltage when the high state; And
The second electric charge modulation signal is applied to the control terminal of modulation transistor.
16, according to each the described method in the claim 12 to 15, it is characterized in that, use at least one charging pump stage to produce booster voltage.
17, method according to claim 16 is characterized in that, also uses charge pump to produce the voltage in order to wipe or programme electric erasable and programmable storage.
According to claim 16 or 17 described methods, it is characterized in that 18, the alternating voltage that the use antenna circuit is supplied is as the pump signal of charge pump.
19, according to each the described method in the claim 12 to 18, it is characterized in that, use MOS transistor as the electric charge modulation transistor.
According to each the described method in the claim 12 to 19, it is characterized in that 20, antenna circuit comprises the aerial coil of supply alternating voltage when having AC magnetic field.
21, according to each the described method in the claim 12 to 20, it is characterized in that comprising:
First terminal of antenna circuit is connected to a terminal of commutation diode;
One reference potential is applied to another terminal of commutation diode;
Second terminal of antenna circuit is connected to a terminal of smmothing capacitor;
Described reference potential is applied to another terminal of smmothing capacitor;
Cause first terminal of antenna circuit to present alternating voltage, and second terminal of antenna circuit present the commutating voltage that is relevant to reference potential; And
Commutating voltage is applied on the conduction terminal of modulation transistor and and is applied on transistorized another conduction terminal alternating voltage.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0604086A FR2900752B1 (en) | 2006-05-05 | 2006-05-05 | METHOD AND DEVICE FOR DATA TRANSMISSION BY LOAD MODULATION |
| FR0604086 | 2006-05-05 | ||
| PCT/IB2007/001139 WO2007129187A1 (en) | 2006-05-05 | 2007-05-02 | Method and device for transmitting data by charge modulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101438302A true CN101438302A (en) | 2009-05-20 |
| CN101438302B CN101438302B (en) | 2011-06-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800162199A Active CN101438302B (en) | 2006-05-05 | 2007-05-02 | Method and device for transmitting data by charge modulation |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8285204B2 (en) |
| EP (1) | EP2016537B1 (en) |
| CN (1) | CN101438302B (en) |
| AT (1) | ATE443902T1 (en) |
| CA (1) | CA2651297C (en) |
| DE (1) | DE602007002561D1 (en) |
| FR (1) | FR2900752B1 (en) |
| HK (1) | HK1130338A1 (en) |
| WO (1) | WO2007129187A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108534826A (en) * | 2018-03-26 | 2018-09-14 | 王智华 | Wireless communication system, detection device and building structure |
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|---|---|---|---|---|
| TWI361603B (en) * | 2008-04-25 | 2012-04-01 | Univ Nat Taiwan | Signal conversion device, radio frequency tag, and method for operating the same |
| JP6178424B2 (en) | 2012-11-14 | 2017-08-09 | ヴェクトリアス メディカル テクノロジーズ リミテッド | Drift compensation for embedded capacitance-based pressure transducers |
| US10105103B2 (en) | 2013-04-18 | 2018-10-23 | Vectorious Medical Technologies Ltd. | Remotely powered sensory implant |
| US10205488B2 (en) | 2013-04-18 | 2019-02-12 | Vectorious Medical Technologies Ltd. | Low-power high-accuracy clock harvesting in inductive coupling systems |
| WO2017115112A1 (en) | 2015-12-30 | 2017-07-06 | Vectorious Medical Technologies Ltd. | Power-efficient pressure-sensor implant |
| CN105577896B (en) * | 2014-10-14 | 2019-08-02 | 国民技术股份有限公司 | The method and system that information mutually passes |
| EP3291723A2 (en) | 2015-05-07 | 2018-03-14 | Vectorious Medical Technologies Ltd. | Heart implant with septum gripper |
| CN111264034A (en) * | 2017-10-25 | 2020-06-09 | 日本精机株式会社 | Receiving circuit and communication device |
| DE102017126349A1 (en) | 2017-11-10 | 2019-05-16 | Bundesdruckerei Gmbh | METHOD FOR CONNECTING A FIRST DATA BLOCK TO A SECOND DATA BLOCK, METHOD FOR VERIFYING THE INTEGRITY OF A BLOCK CHAIN STRUCTURE, DEVICE AND COMPUTER PROGRAM PRODUCT |
| FR3074940A1 (en) * | 2017-12-07 | 2019-06-14 | Stmicroelectronics (Rousset) Sas | DETECTION OF AN NFC DEVICE |
| KR102603180B1 (en) * | 2017-12-14 | 2023-11-16 | 삼성전자주식회사 | Modulation index setting circuit of NFC device, NFC device and method of operating the NFC device |
| WO2019220232A1 (en) * | 2018-05-17 | 2019-11-21 | Vectorious Medical Technologies Ltd. | Low-power high-accuracy clock harvesting in inductive coupling systems |
| EP3742341B1 (en) | 2019-05-20 | 2022-07-27 | Nxp B.V. | Rfid transponder and method of operating the same |
| EP3751462B1 (en) | 2019-06-11 | 2022-01-05 | Nxp B.V. | Transponder and corresponding operating method |
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| GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
| US6054925A (en) * | 1997-08-27 | 2000-04-25 | Data Investments Limited | High impedance transponder with improved backscatter modulator for electronic identification system |
| FR2776865B1 (en) * | 1998-03-31 | 2000-05-05 | Commissariat Energie Atomique | INDUCTIVE COUPLING TELETRANSMISSION DEVICE |
| FR2791489B1 (en) * | 1999-03-25 | 2001-06-08 | Inside Technologies | METHOD FOR MODULATING THE AMPLITUDE OF AN ANTENNA SIGNAL |
| FR2791493B1 (en) * | 1999-03-25 | 2001-06-08 | Inside Technologies | TRANSMITTING / RECEIVING CIRCUIT OF DATA BY INDUCTIVE COUPLING |
| FR2815490B1 (en) * | 2000-10-16 | 2006-07-07 | Inside Technologies | CONTACTLESS INTEGRATED CIRCUIT READER |
| DE10151440C1 (en) * | 2001-10-18 | 2003-02-06 | Siemens Ag | Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor. |
| FR2831305B1 (en) * | 2001-10-23 | 2004-01-30 | Inside Technologies | CONTACTLESS INTEGRATED CIRCUIT COMPRISING AUTOMATIC FRAME IDENTIFICATION MEANS |
| US7494066B2 (en) * | 2003-12-19 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| FR2888652B1 (en) * | 2005-07-18 | 2007-10-12 | Oberthur Card Syst Sa | ACTIVE SECURING METHOD AND DEVICE FOR NON-CONTACT ELECTRONIC DEVICE |
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2006
- 2006-05-05 FR FR0604086A patent/FR2900752B1/en not_active Expired - Fee Related
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2007
- 2007-05-02 DE DE602007002561T patent/DE602007002561D1/en active Active
- 2007-05-02 CN CN2007800162199A patent/CN101438302B/en active Active
- 2007-05-02 EP EP07734456A patent/EP2016537B1/en active Active
- 2007-05-02 WO PCT/IB2007/001139 patent/WO2007129187A1/en active Search and Examination
- 2007-05-02 AT AT07734456T patent/ATE443902T1/en active
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- 2007-05-02 US US12/299,391 patent/US8285204B2/en active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108534826A (en) * | 2018-03-26 | 2018-09-14 | 王智华 | Wireless communication system, detection device and building structure |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE443902T1 (en) | 2009-10-15 |
| DE602007002561D1 (en) | 2009-11-05 |
| EP2016537A1 (en) | 2009-01-21 |
| CA2651297C (en) | 2014-11-18 |
| FR2900752B1 (en) | 2008-10-10 |
| WO2007129187A1 (en) | 2007-11-15 |
| HK1130338A1 (en) | 2009-12-24 |
| US8285204B2 (en) | 2012-10-09 |
| CN101438302B (en) | 2011-06-29 |
| CA2651297A1 (en) | 2007-11-15 |
| US20090203313A1 (en) | 2009-08-13 |
| EP2016537B1 (en) | 2009-09-23 |
| FR2900752A1 (en) | 2007-11-09 |
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