CN101431069A - Power semiconductor module with temperature sensor - Google Patents
Power semiconductor module with temperature sensor Download PDFInfo
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- CN101431069A CN101431069A CNA2008101744085A CN200810174408A CN101431069A CN 101431069 A CN101431069 A CN 101431069A CN A2008101744085 A CNA2008101744085 A CN A2008101744085A CN 200810174408 A CN200810174408 A CN 200810174408A CN 101431069 A CN101431069 A CN 101431069A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
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Abstract
The invention relates to a power semiconductor module with a temperature sensor. The power semiconductor module has an electrically and thermally conductive base plate (1), an electrically insulating and thermally conductive substrate (2) arranged on the base plate, at least a metallization (21, 23) placed on the side of the substrate (2) turned away from the base plate (1), at least a semiconductor member (24) electrically connected to the metallization (21, 23) or fixed on the substrate (2) and/or the metallization (21, 23), a housing (4) with the base plate (1) at least partly surrounding the substrate (2) and said at least one semiconductor member (24), and a temperature sensor (5) enclosed partially by housing (4) and the base plate and embedded in a block (7) formed by an electrically insulating and thermally conductive mass, wherein the block (7) is thermo-contacted with at least one semiconductor member (24).
Description
Technical field
The present invention relates to have the power semiconductor modular of temperature sensor.
Background technology
It is known having the power semiconductor modular that is applied to the temperature sensor on the substrate, and the substrate that wherein is used for its part is fixed to the substrate of power semiconductor modular.These substrates have the electric insulation layer of thermal conductive resin, make to exist heat conduction to contact with substrate.Yet the electric insulation in this power semiconductor modular in the space of substrate top is problematic, and described space is filled with the embedding composition usually.In this case, this embedding composition embeds temperature sensor at least in part.If be damaged, because the high-energy input may in the embedding composition electrical breakdown take place.So no longer provide temperature sensor and the carrying high pressure the power electronic parts between required reliable electric insulation.Therefore, the better electric insulation between the parts of preferred temperature transducer and carrying high pressure.
This realizes by power semiconductor modular, this power semiconductor modular has conduction and heat-conducting substrate, be arranged on electric insulation on this substrate and thermal conductive substrate, be applied at least substrate away from the metallization on the side of substrate and be fixed to substrate and/or metallization and be electrically connected to metallized at least one semiconductor device.And, shell is provided, it surrounds substrate and described at least one semiconductor device at least in part with substrate.In this case, shell and substrate also surround the temperature sensor be embedded in the piece that is made of electric insulation and heat conduction composition at least in part, and wherein said contacts with substrate heat.
Summary of the invention
According to embodiments of the invention, a kind of power semiconductor modular is provided, comprise: the substrate of conduction and heat conduction, be arranged on the electric insulation on the substrate and the substrate of heat conduction, at least be applied to substrate away from the metallization on that side of substrate, at least one semiconductor device, it is fixed to substrate and/or metallization and is electrically connected with metallization, shell, it surrounds substrate and described at least one semiconductor device at least in part with substrate, and temperature sensor, this temperature sensor is by shell and substrate surrounds at least in part and this temperature sensor is embedded in the piece that the composition by electric insulation and conduction constitutes, wherein said with described at least one semiconductor device thermo-contact.
Description of drawings
Explain the present invention in more detail based on the exemplary embodiment shown in the accompanying drawing below, wherein similar elements has identical reference marker.In the drawings:
Fig. 1 illustrates the power semiconductor modular with integrated temperature sensor according to prior art with sectional view;
Fig. 2 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, and this integrated temperature sensor has plastic body and fixing in substrate;
Fig. 3 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, and this integrated temperature sensor has plastic body and the adhesive bond on substrate;
Fig. 4 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, and this integrated temperature sensor has plastic body and the adhesive bond on substrate;
Fig. 5 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, and this integrated temperature sensor has plastic body and is connected with spiral in substrate;
Fig. 6 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, and this integrated temperature sensor has the plastic body that comprises two material areas;
Fig. 7 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, the bonding conductor that this integrated temperature sensor has plastic body and laterally draws; And
Fig. 8 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, and this integrated temperature sensor has plastic body and bonding conductor heat sink and that draw downwards.
Embodiment
Fig. 1 shows the known power semiconductor modular with integrated temperature sensor with sectional view.Power semiconductor modular according to Fig. 1 comprises substrate 1 and substrate 2, and this substrate 2 has lower metalization 21, insulating interlayer 22 and upper metallization 23.One or more semiconductor devices 24 and bonding conductor 25 are arranged on the substrate 2 also coupled.First bonding conductor 61 and second bonding conductor 62 that also comprise siloxanes embedding composition 3, shell 4, temperature sensor 5 and temperature sensor 5 according to the power semiconductor modular of Fig. 1.
According to Fig. 1, substrate 2 is arranged on the substrate 1 and is coupled, wherein substrate 2 provide usually between electronic semi-conductor's parts 24 interconnection and with the interconnection of signal and being connected of outwards drawing is provided, for example bonding conductor 25.In this case, temperature sensor 5 be arranged on that independent substrate 2 ' is gone up and for example the welding by heat conduction be connected with adhesive bond with this independent substrate 2 ' and link to each other.Semiconductor device 24 and temperature sensor 5 are accommodated in the shell 4 together.
In this case, temperature sensor 5 is provided with as far as possible near semiconductor device 24, plans to monitor its temperature, may the temperature difference also guarantee thermometric pinpoint accuracy thus so that guarantee the minimum between temperature sensor 5 and the semiconductor device 24.In this case, the heat conduction to temperature sensor 5 also takes place via substrate 1 and substrate 2.
Described temperature sensor by electric insulation in soft embedding composition (the being siloxanes embedding composition 3) region surrounded electric insulation of temperature sensor 5 prove problematic in this case.If voltage raises, may in siloxanes embedding composition 3 electrical breakdown take place then, may cause the damage or the destruction of temperature sensor 5 thus.In this case, provide temperature sensor 5 and be in reliable electric insulation between the semiconductor device 24 of power semiconductor modular of high pressure no longer reliably.
Fig. 2 illustrates the exemplary embodiment that has the power semiconductor modular of integrated temperature sensor 5 according to of the present invention with sectional view.Power semiconductor modular according to Fig. 2 also comprises substrate 1 and substrate 2.First bonding conductor 61 and second bonding conductor 62 of shell 4, temperature sensor 5, temperature sensor 5 are provided in addition.Compared to Figure 1, comprise piece around temperature sensor 5 according to the power semiconductor modular of Fig. 2, for example plastic body 7, are formed integrally on the pin (pin) 71 on the plastic body 7, and are included in the opening 11 in the substrate 1.Other parts shown in Fig. 2 are corresponding to those of Fig. 1, and therefore specify no longer in more detail.
According to Fig. 2, temperature sensor 5 is embedded in its oneself the plastic body 7, and wherein this plastic body 7 directly contacts with siloxanes embedding composition 3 with substrate 1.Pin 71 on the plastic body 7 is engaged in the opening 11 in the substrate 1.Plastic body 7 around the temperature sensor 5 is also towards outside extend past shell 4, and makes first bonding conductor 61 of outwards drawing and second bonding conductor 62 (equally outwards drawing) and shell 4 electric insulations of temperature sensor 5 by this way.In this case, temperature sensor 5 is arranged on by this way and makes its location as far as possible near substrate 1 in the plastic body 7, and this substrate 1 is because its high-termal conductivity and enough parts of the heat that will be produced by semiconductor device 24 are delivered to plastic body 7 and are delivered to temperature sensor 5 thus.The result obtains the temperature survey of pinpoint accuracy.
The material of plastic body 7 wherein embeds temperature sensor 5 by for example casting, comprises for example showing the polymer that high-termal conductivity but has good electric insulation.This polymer for example has greater than the thermal conductivity in the scope of 1W/m.K, so that also determine the temperature survey of pinpoint accuracy by this mode.The example of suitable polymer is a thermoplastics, for example polyamide, polypropylene, polyphenylene sulfide (polyphenylene sulfide), liquid crystal or the like.
In this case, pin 71 and opening 11 can be embedded into for example circular cross-section, and wherein other corresponding mutually cross section also is fine, for example square or hexagonal cross-section or the like.Under the situation of the circular cross-section embodiment of pin 71 and opening 11, pin 71 can for example embed in the substrate 1 with the diameter bigger slightly than the opening 11 that is associated.Because the material of plastic body 7 or embedding composition generally have elasticity to a certain degree, for example when using polymer, therefore selling 71 can remain on wherein safely to be pressed in cooperation (press fit) patchhole 11 and with mechanical means.
As the replacement that is pressed into cooperation, pin 71, opening 11 and plastic body 7 can also use adhesive bond technical battery to receive substrate 1 with other contact area of substrate 1.In this case, pin 71 can for example embed with ratio open 11 slightly little sizes, and the adhesive that connects for use in adhesive bond can easily be contained between the adhesive bond zone that is adjacent to each other.As an example, use the adhesive that has high heat conductance equally in this case, very thin even this adhesive layer is made usually.
Be and in the preproduction step of separating with power semiconductor modular, make plastic body 7 and the temperature sensor 5 that is cast in wherein according to another advantage of the plastic body 7 of Fig. 2.Can use conventional injection-moulding plastic (injection-molding) technology in this case, thus envoy cost-saving and create possibility efficiently.Then correspondingly will be by this way plastic body 7 preproduction and that comprise temperature sensor 5, first bonding conductor 61 and second bonding conductor 62 insert in the substrate 1 of power semiconductor modular with pin 71 or with its adhesive bond.Afterwards, the parts of other outfit of plastic body 7 and power semiconductor modular utilize siloxanes embedding composition 3 to carry out embedding jointly.
Fig. 3 illustrates the power semiconductor modular with another exemplary integrated temperature sensor embodiment with sectional view.Power semiconductor modular according to Fig. 3 also comprises substrate 1, substrate 2, shell 4, temperature sensor 5, plastic body 7 and bonding conductor 61 and 62.Other parts shown in Figure 3 are also corresponding to according to those of Fig. 1 and Fig. 2.The material of plastic body 7 wherein embeds temperature sensor 5, also comprises the polymer that shows high-termal conductivity and electric insulation.Yet, compare with Fig. 2, plastic body 7 is to be embedded under the situation of pin not having here.Therefore, under situation, in substrate 1, there is not the opening 11 that is used for holding pin according to the power semiconductor modular of Fig. 3 yet.Plastic body 7 and substrate and thus the machinery between temperature sensor 5 and the substrate be connected with heat conduction and connect 72 by adhesive bond and form.Also use adhesive in this case with high heat conductance.Principal advantages according to the embodiment of Fig. 3 is that the geometry of plastic body 7 is simplified (not having pin 71), also need not provide opening 11 in substrate 1.This means can be more simply with more save local plastic body 7 and the substrate 1 made.
Fig. 4 illustrates the power semiconductor modular with another exemplary integrated temperature sensor embodiment with sectional view.Power semiconductor modular according to Fig. 4 also comprises substrate 1, substrate 2, shell 4, temperature sensor 5, plastic body 7 and bonding conductor 61 and 62.Other parts shown in Figure 4 also corresponding to according to Fig. 1-3 those and therefore specify no longer in more detail.
According to Fig. 4, to compare with embodiment according to Fig. 3, the plastic body 7 of temperature sensor 5 is not arranged on the substrate 1 in this case, but is located immediately on the substrate 2.According to Fig. 4, the plastic body 7 of temperature sensor 5 and the machinery between the substrate 2 are connected with heat conduction by fixing (fixing) in the zone 231 of the upper metallization 23 (referring to Fig. 1) of substrate 2 and are embedded into.In this case, the described fixing adhesive bond that also can be embodied as connects.Also use adhesive in this case with high heat conductance.According to the advantage of the embodiment of Fig. 4 be the plastic body 7 of temperature sensor 5 be provided with the semiconductor device 24 of more contiguous power semiconductor modular, produce from semiconductor device 24 to plastic body 7 and thus thus to the heat conduction that further improves of temperature sensor 5.
In the exemplary embodiment according to Fig. 2 and 3,5 heat conduction path comprises substrate 2 (comprising upper metallization 23, insulating interlayer 22 and lower metalization 21), substrate 1 and plastic body 7 from semiconductor device 24 to temperature sensor.By contrast, in Fig. 4,5 heat conduction path only comprises upper metallization 23 and plastic body 7 from semiconductor device 24 to temperature sensor, produces lower temperature thus and descend between semiconductor device 24 and temperature sensor 5.
Fig. 5 illustrates power semiconductor modular in another exemplary embodiment with sectional view, and it is similar to the embodiment according to Fig. 2 to a great extent, and difference is that plastic body 7 has the pin 73 that forms with external screw thread.In this case, the opening 11 in the substrate 1 utilizes corresponding internal thread to be embedded into, and plastic body 7 can be screwed in the substrate 1 so that the connection of the mechanical strength that acquisition is expected between substrate 1 and plastic body 7 and the heat conduction of expectation thus.Also in this embodiment, in addition can be at the adhesive that use has good thermal conductivity between the zone that adjoins each other of plastic body 7 and substrate 1 or opening 11, so that further improve mechanical stability and heat transmission.
Fig. 6 illustrates a kind of power semiconductor modular with sectional view, and this power semiconductor modular comprises plastic body 7, temperature sensor, substrate 1 and the semiconductor device 24 with threaded pin 73.In this case, provide the first area 74 of plastic body 7 and the second area 75 of plastic body 7.Be that according to the specific characteristic of the plastic body 7 of Fig. 6 this plastic body evenly and continuously do not made by same material, but described regional 74 and 75 by the different materials manufacturing, that is to say for example by different polymer manufacturings.
In this case, first area 74 comprises the polymeric material that for example has minimum possible thermal conductivity, for example has the PVC less than the thermal conductivity of the magnitude of 0.2W/mK.Second area 75 comprises the polymeric material with the highest possible thermal conductivity characteristics, for example has the plastics greater than the thermal conductivity of 1W/mK.The example of suitable polymer is a thermoplastics, for example polyamide, polypropylene, polyphenylene sulfide, liquid crystal or the like.As a result, form interface 76 between the first area 74 of plastic body 7 and second area 75, described interface is shown in broken lines in Fig. 6.
In this case, temperature sensor 5 is arranged in the second area 75 with high heat conductance, exactly is as close as possible interface 77, conducts the heat to the plastic body 7 from this interface.In the exemplary embodiment according to Fig. 6, described interface 77 is between plastic body 7 and substrate 1.In this case, as seeing from Fig. 4, the interface 77 that heat is incorporated in the plastic body 7 also can for example be the upper metallization 23 of substrate 2.
By contrast, under the situation according to the embodiment of Fig. 7, the heat accumulation that 77 places introduce plastic body 7 at the interface is 76 places at the interface.This means that the second area 75 that wherein is provided with temperature sensor 5 is heated to higher temperature, it is the temperature of the semiconductor device 24 of more approaching measurement thus.That is to say descend to confirm it is less, improved thermometric accuracy thus in the temperature to the bang path of temperature sensor 5.
Fig. 7 illustrates a kind of power semiconductor modular with sectional view, and this power semiconductor modular also comprises the bonding conductor 61,62 of substrate 1, substrate 2, shell 4, temperature sensor 5 and temperature sensor 5.In addition, the power semiconductor modular according to Fig. 7 comprises semiconductor device 24, substrate 2, siloxanes embedding composition 3, the plastic body 7 with pin 71 and the opening in substrate 1 11.Other parts shown in Figure 8 corresponding to according to Fig. 1-7 those and therefore specify no longer in more detail.
Because insulated bonding conductor 61 and 62 is laterally drawn from shell in plastic body 7, therefore can realize the plastic body 7 of less physical dimension generally.The result, the thermal capacity reduction of plastic body 7 and the temperature sensor 5 that is enclosed in are wherein heated more quickly, measure thus and become more accurate, especially under the situation of temperature fluctuation, that is to say that the reaction time of the 5 pairs of temperature fluctuations of temperature sensor in the plastic body 7 reduces.
In addition, this embodiment has realized that also the interface 77 that enlarges is used for heat is incorporated into plastic body 7 from substrate 1, provides from substrate 1 to plastic body 7 and transmit to the heat faster of temperature sensor 5 thus thus equally.In addition, first and second bonding conductors 61 and 62 can be provided with further from the power component that carries voltage, and for example semiconductor device 24, obtain the reliable isolation or the insulation of expectation thus.
Fig. 8 illustrates the power semiconductor modular with integrated temperature sensor with sectional view, this power semiconductor modular has from each known parts of prior figures, for example substrate 1, shell 4, plastic body 7, pin 71, temperature sensor 5, the substrate 1 with opening 11 and bonding conductor 61 and 62.In addition, this power semiconductor modular comprises heat sink 8 of (the heat sink fin) 82 that have heat sink and opening 81.In this case, heat sink 8 substrates 1 that are connected to power semiconductor modular.This heat sink 8 for example are used for dissipating is delivered to ambient air to it from the unnecessary heat of power semiconductor modular and by cooling fin (cooling fin) 82.In this case, cooling fin 82 provides the big surf zone unwanted heat that is used to dissipate.According to Fig. 8, the bonding conductor 61 of temperature sensor 5 and 62 is drawn out to the outside from power semiconductor modular by the pin 71 of plastic body and the opening 11 the substrate 1.As seeing from Fig. 8, as according to Fig. 7, the plastic body 7 of the physical dimension that this generation reduces, it provides the advantage of describing about Fig. 7 equally, the thermal capacity that promptly reduces, to short reaction time of the variations in temperature of semiconductor device 24 and with the reliable isolation or the insulation of semiconductor device 24.
If power semiconductor modular utilization as shown in Figure 8 is fixed to heat sink 8 of substrate 1 and is embedded into, so described heat sinkly can have corresponding opening 81 equally so that the bonding conductor 61 and 62 of temperature sensor 5 is drawn out to the outside.For this reason, the opening 81 in heat sink 8 is correspondingly aimed at the opening 11 in the substrate 1 in assembling process.In this case, the pin 71 of plastic body 7 for example only has certain-length and makes it not extend beyond opening 11 in the substrate 1 to enter in heat sink 8 the opening 81.As an example, pin 71 as shown in Figure 8 only partly extends in the opening 11 of substrate 1, so that minimize the destruction of heat sink 8 pairs of measurements.
List of reference signs:
1 substrate
Opening in 11 substrates
2 substrates
The lower metal of 21 substrates
22 insulating interlayers
The upper metallization of 23 substrates
FX in 231 upper metallization
24 semiconductor devices
25 bonding conductors
3 siloxanes embedding compositions
4 shells
5 temperature sensors
First bonding conductor of 61 temperature sensors
Second bonding conductor of 62 temperature sensors
The plastic body of 7 temperature sensors
71 pins
72 adhesive bond connect
73 threaded pins
The first area of 74 plastic bodies
The second area of 75 plastic bodies
76 interfaces
77 interfaces
8 is heat sink
81 openings in heat sink
82 heat sink
Claims (16)
1. power semiconductor modular comprises:
The substrate (1) of conduction and heat conduction,
Be arranged on the electric insulation on the substrate (1) and the substrate (2) of heat conduction,
At least be applied to substrate (2) away from the metallization (21,23) on that side of substrate (1),
At least one semiconductor device (24), it is fixed to substrate (2) and/or metallization (21,23) and is electrically connected with metallization (21,23),
Shell (4), its with substrate (1) surround at least in part substrate (2) and described at least one semiconductor device (24) and
Temperature sensor (5), this temperature sensor is by shell (4) and substrate (1) surrounds at least in part and this temperature sensor is embedded in the piece (7) that the composition by electric insulation and conduction constitutes wherein said (7) and described at least one semiconductor device (24) thermo-contact.
2. power semiconductor modular as claimed in claim 1, wherein said composition has the thermal conductivity greater than 1W/mK.
3. power semiconductor modular as claimed in claim 1 or 2, wherein said composition comprises plastics.
4. power semiconductor modular as claimed in claim 3, wherein said composition comprises polymer.
5. as each the described power semiconductor modular in the claim of front, wherein shell (4) has opening and described (7) to be embedded into by this way and to be arranged so that it passes through described opening outstanding from shell (4).
6. power semiconductor modular as claimed in claim 5 wherein has the electrical connection (61,62) that is used for temperature sensor (5) from the outstanding part of shell (4).
7. power semiconductor modular as claimed in claim 6, wherein said connection (61,62) is outstanding from shell (4) away from the mode of substrate (1) with orientation.
8. power semiconductor modular as claimed in claim 6, wherein said connection (61,62) are outstanding along the direction that is parallel to substrate (1) from shell (4).
9. power semiconductor modular as claimed in claim 6, it is outstanding from shell (4) by described opening (11) that wherein substrate (1) has opening (11) and described connection (61,62).
10. as each the described power semiconductor modular in the claim of front, wherein said (7) are at least by substrate (1) and described at least one semiconductor device (24) thermo-contact.
11. as each the described power semiconductor modular in the claim of front, wherein said (7) are at least by substrate (2) and/or its metallization (21,23) and described at least one semiconductor device (24) thermo-contact.
12. as each the described power semiconductor modular among the claim 1-11, wherein substrate (1) has opening (11) and described and has pin (71), wherein said pin extends in the opening (11) of substrate (1) in the mode that formation is pressed into cooperation.
13. as each the described power semiconductor modular among the claim 1-11, wherein substrate (1) has screwed opening (11) and described (7) have the pin (73) that has the respective opposed screw thread, and wherein said pin (7) is screwed in the opening (11) of substrate (1) to form the spiral ways of connecting.
14. as each the described power semiconductor modular among the claim 1-11, wherein said (7) are affixed to substrate (1), substrate (2) or its metallization (21,23) by adhesive bond.
15. as each the described power semiconductor modular in the claim of front, wherein said (7) have two zones (74,75), described two zones have different thermal conductivities, and the position, the zone with higher heat-conductivity (75) in described two zones is more approached substrate (1) and surrounded temperature sensor (5).
16. as each the described power semiconductor modular in the claim of front, wherein shell (4) has been filled soft embedding composition (3).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007052630.1 | 2007-11-05 | ||
| DE102007052630.1A DE102007052630B4 (en) | 2007-11-05 | 2007-11-05 | Power semiconductor module with temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101431069A true CN101431069A (en) | 2009-05-13 |
| CN101431069B CN101431069B (en) | 2011-08-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101744085A Active CN101431069B (en) | 2007-11-05 | 2008-11-05 | Power semiconductor module with temperature sensor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101431069B (en) |
| DE (1) | DE102007052630B4 (en) |
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| CN102054830A (en) * | 2009-09-30 | 2011-05-11 | 英飞凌科技股份有限公司 | Power semiconductor module and method for driving the same |
| CN103078491A (en) * | 2011-10-26 | 2013-05-01 | 英飞凌科技股份有限公司 | Power module |
| CN103378021A (en) * | 2012-04-30 | 2013-10-30 | 英飞凌科技股份有限公司 | Power module with directly attached thermally conductive structures |
| KR20160003671A (en) * | 2013-04-26 | 2016-01-11 | 에이비비 테크놀로지 아게 | Power semiconductor module |
| CN105745751A (en) * | 2013-11-18 | 2016-07-06 | Bsh家用电器有限公司 | Device having a power electronics module for supplying an electric load of a household appliance with electrical supply voltage, household appliance, and method for producing such a device |
| CN110648982A (en) * | 2018-06-26 | 2020-01-03 | 英飞凌科技德累斯顿公司 | Method for producing a semiconductor device |
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| EP4068349B1 (en) * | 2021-03-30 | 2023-09-20 | Siemens Aktiengesellschaft | Power module |
| EP4102555A1 (en) * | 2021-06-10 | 2022-12-14 | Infineon Technologies AG | Power semiconductor module |
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| DE10024516B4 (en) * | 2000-05-18 | 2006-03-09 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | The power semiconductor module |
| JP4097613B2 (en) * | 2004-03-09 | 2008-06-11 | 三菱電機株式会社 | Semiconductor device |
-
2007
- 2007-11-05 DE DE102007052630.1A patent/DE102007052630B4/en not_active Expired - Fee Related
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2008
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| CN102054830A (en) * | 2009-09-30 | 2011-05-11 | 英飞凌科技股份有限公司 | Power semiconductor module and method for driving the same |
| CN103078491A (en) * | 2011-10-26 | 2013-05-01 | 英飞凌科技股份有限公司 | Power module |
| CN103078491B (en) * | 2011-10-26 | 2016-08-03 | 英飞凌科技股份有限公司 | Power model |
| CN103378021A (en) * | 2012-04-30 | 2013-10-30 | 英飞凌科技股份有限公司 | Power module with directly attached thermally conductive structures |
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| CN105745751A (en) * | 2013-11-18 | 2016-07-06 | Bsh家用电器有限公司 | Device having a power electronics module for supplying an electric load of a household appliance with electrical supply voltage, household appliance, and method for producing such a device |
| CN105745751B (en) * | 2013-11-18 | 2019-03-29 | Bsh家用电器有限公司 | Device, household appliance with power electronics modules and the method for manufacturing the device |
| CN112105935A (en) * | 2018-05-29 | 2020-12-18 | 国际商业机器公司 | Biosensor package |
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| CN110648982A (en) * | 2018-06-26 | 2020-01-03 | 英飞凌科技德累斯顿公司 | Method for producing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101431069B (en) | 2011-08-03 |
| DE102007052630A1 (en) | 2009-05-14 |
| DE102007052630B4 (en) | 2019-08-14 |
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