CN101425557B - Backlight module and LED thereof - Google Patents
Backlight module and LED thereof Download PDFInfo
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- CN101425557B CN101425557B CN2008101855779A CN200810185577A CN101425557B CN 101425557 B CN101425557 B CN 101425557B CN 2008101855779 A CN2008101855779 A CN 2008101855779A CN 200810185577 A CN200810185577 A CN 200810185577A CN 101425557 B CN101425557 B CN 101425557B
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Abstract
The invention provides a backlight module and a light emitting diode thereof. The light emitting diode can ensure that optical fields which emit light from the horizontal and the vertical directions are distributed differently. A luminous chip and a light guide structure are contained in the light emitting diode; and the light guide structure is positioned on the luminous chip. A pair of semiellipsoids which are mutually arranged in parallel and are mutually spliced along a junction surface is included in the light guide structure. The bottom surface of each semiellipsoid is adjacent to the junction surface, and is in an imperfect ellipse shape; and a long axle and a short axle are intersected in the center. The junction surface is adjacent to the short axle. The ellipsoidal curved surface of each semiellipsoid is adjacent to the junction surface and the bottom surface. The maximal vertical space between the ellipsoidal curved surface and the bottom surface is larger than the maximal height of the junction surface. The light emitting diode has the effect of ensuring that the optical fields radiate in a large-angle manner in the horizontal direction so as to reduce the occurrence probability of a dark band; and the light emitting diode has the effect of ensuring that the optical fields converge in the vertical direction, so that the all the light can be centralized, and the trouble of light leakage is reduced.
Description
Technical field
The present invention relates to a kind of light-emitting diode and backlight module, and relate in particular to a kind of light-emitting diode and backlight module that is applied to display floater.
Background technology
Backlight module is one of key part and component of display panels.Because liquid crystal itself can't be luminous, therefore need to supply light source by backlight module, can provide normal and the well-balanced image of brightness so as to making liquid crystal panel.A plurality of optical sheets are arranged in backlight module, for example light guide plate, diffusion sheet and prismatic lens, the light that is used for light source is sent is distributed on the liquid crystal panel equably, and then improves the brightness of liquid crystal panel.
The light source that is applied to backlight module has cold-cathode fluorescence lamp or light-emitting diode.Wherein, because light-emitting diode has possessed characteristics such as durability, the life-span is long, light and handy, power consumption is low, be regarded as desirable new generation lighting source.Especially under the surging gradually situation of present energy expenditure, light-emitting diode is subjected to the attention and the utilization of industrial circle more, so as to replacing other bigger light-emitting components of power consumption in the past.In addition, light-emitting diode is of a great variety, of many uses, becomes important tool indispensable in the modern life already.
Along with development of science and technology, the luminous efficiency of light-emitting diode improves gradually, and brightness is also more and more brighter.In other words, the required brightness of backlight module can be reached by fewer and feweri light-emitting diode.In the same backlight module, the quantity of light-emitting diode is few more, and cost is also just low more.
Please refer to Figure 1A, it illustrates the schematic top plan view of known backlit module 10, promptly represents the bright dipping situation of horizontal direction.When the quantity minimizing of light-emitting diode 12, the spacing between the light-emitting diode 12 increases thereupon.When light-emitting diode 12 is spaced, during the light 16 that light-emitting diode 12 is sent must shine at interval, otherwise will on light guide plate 14, forms blanking bar 18, and then make and produce the phenomenon that light and shade is interlocked on the picture of display.
If the subtended angle of light-emitting diode 12 bright dippings can't magnify along with increase at interval, then the light 16 that sent of light-emitting diode 12 can't shine in its adjacent interval effectively, then the blanking bar 18 in the light guide plate 14 can be got over obviously, and the uneven phenomenon of picture brightness also becomes remarkable.In other words, the quantity of light-emitting diode 12 must make trade-offs between manufacturing cost and display frame quality.
On the other hand, please refer to Figure 1B, it illustrates the schematic side view of known backlit module 10, promptly represents the bright dipping situation of vertical direction.In order to adapt to the trend of electronic product slimming, the thickness of display and backlight module 10 thereof diminishes gradually.Wherein, the thickness of light guide plate 14 also dwindles gradually.Because light-emitting diode now is big at the dispersion angle of vertical direction.Therefore, when the thickness of light guide plate 14 narrows down to the thickness that approaches light-emitting diode 12, will cause the light 16 of light-emitting diode 12 part angles can't be sent in the light guide plate 14, and form the phenomenon of light leak, also can reduce the service efficiency of light 16.
In view of this, need a kind of new backlight module 10 and light-emitting diode 12 thereof, its horizontal direction has the effect that the light field wide-angle is dispersed, to reduce the probability that blanking bar takes place, and its vertical direction has the effect of the light field of making convergence, make all light can both enter the inside of light guide plate 14, to increase the service efficiency of light.
Summary of the invention
The object of the present invention is to provide a kind of backlight module and light-emitting diode thereof, to improve above-mentioned defective.
One aspect of the present invention provides a kind of light-emitting diode, and the setting of its structure can make level different with the optical field distribution of vertical direction bright dipping.Light-emitting diode comprises luminescence chip and light guide structure at least, and wherein light guide structure is positioned on the luminescence chip.A pair of semiellipsoid is arranged in the light guide structure, and semiellipsoid engages one another each other side by side and along a composition surface.
The bottom surface contiguous engagement face of each semiellipsoid.The bottom surface is imperfect ellipse and has a major axis and a minor axis that wherein major axis and minor axis occur simultaneously in a mid point.The composition surface is perpendicular to minor axis.Each semiellipsoid has an Ellipsoidal Surface contiguous engagement face and a bottom surface.Wherein, the maximum perpendicular spacing of Ellipsoidal Surface and bottom surface is greater than the maximum height on composition surface.
The distribution of the bright dipping light field of light-emitting diode is relevant with the configuration of light guide structure.Configuration by above-mentioned light guide structure, make along each slightly the light field of the long axis direction of the bottom surface of ovalize can form distribution than wide-angle, then can converge the distribution of smaller angle along the light field of short-axis direction, and then make light field that different distributions be arranged along with different directions, can adapt to the demand of different bright dipping subtended angles.
On the other hand, the present invention discloses a kind of backlight module, and it comprises light-emitting diode and light guide plate at least, wherein lumination of light emitting diode chip and light guide structure.Configuration by light guide structure changes the intensity distributions of light in different angles with configuration.
Particularly, light-emitting diode is in abutting connection with light guide plate.The light guide structure of light-emitting diode is positioned on the luminescence chip, and between luminescence chip and light guide plate.Light guide structure has a pair of semiellipsoid, and semiellipsoid engages one another each other side by side and along a composition surface.
Each semiellipsoid has a bottom surface and an Ellipsoidal Surface.Bottom surface contiguous engagement face.The bottom surface is an imperfect ellipse and has a major axis and a minor axis that wherein major axis and minor axis occur simultaneously in a mid point, and the composition surface is perpendicular to minor axis.Ellipsoidal Surface contiguous engagement face and bottom surface, wherein the maximum perpendicular spacing of Ellipsoidal Surface and bottom surface is greater than a maximum height on composition surface.
After the orientation of the light transmission light guide structure that luminescence chip sent, its optical field distribution can be different along with light direction.Wherein, on the direction of the major axis of bottom surface, light field has the effect that wide-angle is dispersed, and so can reduce the probability that blanking bar takes place.On the direction of minor axis, light field has the phenomenon of convergence, and then reduces the light leakage phenomena that outer rim caused that illumination is mapped to light guide plate.
Description of drawings
For above-mentioned and other purposes of the present invention, feature, advantage and embodiment can be become apparent, being described in detail as follows of accompanying drawing:
Figure 1A illustrates the schematic top plan view according to a kind of backlight module of known technology.
Figure 1B illustrates the schematic side view according to a kind of backlight module of known technology.
Fig. 2 illustrates the stereogram according to the backlight module of one embodiment of the invention.
Fig. 3 A illustrates the stereogram according to encapsulating structure illustrated in fig. 2.
Fig. 3 B illustrates the profile according to the shown encapsulating structure of Fig. 3 A.
Fig. 4 illustrates the distribution map according to the distribution of light intensity corresponding angle of encapsulating structure illustrated in fig. 2.
Fig. 5 A illustrates the end view according to backlight module illustrated in fig. 2.
Fig. 5 B illustrates the vertical view according to backlight module illustrated in fig. 2.
Fig. 6 illustrates the stereogram according to the encapsulating structure of another embodiment of the present invention.
Wherein, description of reference numerals is as follows:
100: backlight module 110: light guide plate
112: the plane of incidence 114: exiting surface
120: light-emitting diode 122: luminescence chip
124: light guide structure 126: the light guide structure
200: semiellipsoid 210: composition surface
214: the second limits, 212: the first limits
220: bottom surface 222: mid point
230: Ellipsoidal Surface 232: summit
240: major axis 242: minor axis
250: particulate 300: the distribution of light intensity distribution map
320: the second curves of 310: the first curves
L1: 2: the second length of first length L
L3: 4: the four length of the 3rd length L
L5: the 5th length
Embodiment
Please refer to Fig. 2, Fig. 2 illustrates the stereogram according to the backlight module 100 of one embodiment of the invention.Backlight module 100 mainly is to be used to provide display panels light adequately and uniformly.In an embodiment of the present invention, be provided with light-emitting diode 120 and light guide plate 110 in the backlight module 100, light-emitting diode 120 is in abutting connection with light guide plate 110, the side direction light source that light guide plate 110 is responsible for light-emitting diode 120 is sent changes into area source, sees through the blooming (not shown) again and conducts light source equably to the panel (not shown).
Light-emitting diode 120 can comprise luminescence chip 122 and light guide structure 124, and wherein light guide structure 124 is positioned on the luminescence chip 122.In a preferred embodiment of the invention, luminescence chip 122 is to be coated among the light guide structure 124.
Please also refer to Fig. 2, Fig. 3 A and Fig. 3 B, wherein Fig. 3 A illustrates the stereogram of light guide structure 124, and Fig. 3 B is the profile of light guide structure 124 along its minor axis 242.Light guide structure 124 has two semiellipsoids 200.Two semiellipsoids 200 engage one another each other side by side and along a composition surface 210.
In an embodiment of the present invention, two adjacent semiellipsoids 200 are with respect to composition surface 210 minute surface symmetry each other each other.In other words, be the center with composition surface 210, two semiellipsoids 200 are the minute surface symmetry each other.
Each semiellipsoid 200 respectively has one and slightly is an imperfect oval-shaped bottom surface 220 and an Ellipsoidal Surface 230.In an embodiment of the present invention, a major axis 240 and a minor axis 242 are arranged on the bottom surface 220, occur simultaneously in the bottom surface 220 mid point 222 of major axis 240 and minor axis 242.Complete ellipse can define its curvature by mutually perpendicular major axis 240 and minor axis 242.
In an embodiment of the present invention, bottom surface 220 is that the center is mutually symmetrical with minor axis 242.Particularly, bottom surface 220 can be distinguished into two zones by minor axis 242, and these two zones are center minute surface symmetry each other with minor axis 242.
In an embodiment of the present invention, composition surface 210 is in abutting connection with the bottom surface 220, and composition surface 210 is in abutting connection with minor axis 242.In the preferred embodiment, composition surface 210 is substantially perpendicular to bottom surface 220.
As previously mentioned, light guide structure 124 is positioned on the luminescence chip 122.In a preferred embodiment of the invention, luminescence chip 122 is to be wrapped and to be embedded among the light guide structure 124.Wherein, the position of luminescence chip 122 is arranged in light guide structure 124 bottom surfaces 220 and composition surface 210 in abutting connection with part.In more detail, the minor axis 242 that luminescence chip 122 is positioned at the bottom surface 220 of two semiellipsoids 200 is connected to each other part, just the centre of light guide structure 124 bottoms.
Convenient for subsequent descriptions, define the definition of each span access location length in each semiellipsoid 200 at this earlier.Please refer to Fig. 3 A and Fig. 3 B, in each semiellipsoid 200,220 mid point 222 is called first length L 1 along the distance at major axis 240 directions 220 edges to the bottom surface from the bottom surface.220 mid point 222 is called second length L 2 along the distance at minor axis 242 directions 220 edges to the bottom surface from the bottom surface.210 minimum spacing is called the 3rd length L 3 to 220 mid point 222 to the composition surface from the bottom surface.In an embodiment of the present invention, the mid point 222 of bottom surface 220 to the composition surface 210 minimum spacing equal mid point 222 along minor axis 242 directions to the composition surface 210 distance.
Maximum perpendicular spacing between Ellipsoidal Surface 230 and the bottom surface 220 is called the 4th length L 4.In an embodiment of the present invention, the maximum perpendicular spacing between Ellipsoidal Surface 230 and the bottom surface 220 is the distance of summit 232 220 mid points 222 to the bottom surface of Ellipsoidal Surface 230 just.
The maximum height on composition surface 210 is called the 5th length L 5.Particularly, composition surface 210 is first limit 212 on composition surface 210 with Ellipsoidal Surface 230 adjacent places.Composition surface 210 is second limit 214 on composition surface 210 with 220 adjacent places, bottom surface.The maximum height on composition surface 210 is meant the maximum spacing on first limit 212 and second limit 214.In an embodiment of the present invention, the 5th length L 5 be second limit 214 just with the point of minor axis 242 intersections of bottom surface 220 along the composition surface 210 and perpendicular to the distance of second limit, 214 directions to first limit 212.
The maximum perpendicular spacing of Ellipsoidal Surface 230 and bottom surface 220 is greater than the maximum height on composition surface 210, and meaning is that the 4th length L 4 is greater than the 5th length L 5.Thus, the Ellipsoidal Surface 230 of each semiellipsoid 200 is relief slightly, forms as two olive spheroids arranged side by side.
The length of mid point 222 along major axis 240 directions to 220 edges, bottom surface is greater than the length of mid point 222 along minor axis 242 directions to 220 edges, bottom surface, and promptly first length L 1 is greater than second length L 2.In the preferred embodiment, first length L 1 can reach the effect of optical field distribution preferably more than or equal to second length L 2 of twice.In an embodiment of the present invention, first length L 1 equals the twice of second length L 2 in fact.
Three axial lengths of semiellipsoid 200 are respectively first length L 1, second length L 2 and the 4th length L 4.In other words, the curvature of semiellipsoid 200 and Ellipsoidal Surface 230 thereof can be defined by first length L 1, second length L 2 and the 4th length L 4.Wherein, first length L 1 and the 4th length L 4 all can be cutd open half thin-and-long spheroid so the external form of semiellipsoid 200 is similar to one greater than second length L 2.
As previously mentioned, composition surface 210 is between two semiellipsoids 200, and composition surface 210 is in abutting connection with the minor axis 242 of the bottom surface 220 of each semiellipsoid 200.Hence one can see that, and each bottom surface 220 mid point 222 arrives the distance that arrives 220 edges, bottom surface along minor axis 242 directions to the minimum spacing on composition surface 210 is inevitable less than mid point 222, that is to say that the 3rd length L 3 is less than second length L 2.
Single with regard to a semiellipsoid 200, composition surface 210 is equivalent to semiellipsoid 200 along the plane that is parallel to after major axis 240 vertically cuts open down.The spacing of composition surface 210 and bottom surface 220 mid points 222 can influence the size of the maximum height on composition surface 210, and promptly the 3rd length L 3 is more little, and the 5th length L 5 is big more.Particularly, the 3rd length L 3 is more little, and the summit 232 of expression composition surface 210 220 mid points 222 and Ellipsoidal Surface 230 from the bottom surface is near more, and then the maximum height on composition surface 210 can be more near the 4th length L 4.As previously mentioned, the 5th length L 5 is less than the 4th length L 4, so the 3rd length L 3 must be greater than zero.
From the above, the 3rd length L 3 between zero between second length L 2.In the preferred embodiment, the 3rd length L 3 is less than or equal to 1/2nd of second length L 2, can reach the effect of optical field distribution preferably.
Please refer to Fig. 2, light guide plate 110 is called the plane of incidence 112 with the end face of light-emitting diode 120 adjacency.The shape of the plane of incidence 112 is roughly a rectangle, has long limit 116 and minor face 118.Wherein, the direction on long limit 116 is the bearing of trend of light guide plate 110, and minor face 118 is represented the thickness of light guide plate 110.The exiting surface 114 of light guide plate 110 is in abutting connection with the plane of incidence 112.Exiting surface 114 is vertical incidence face 112 in fact.
Please refer to Fig. 2 and Fig. 3 A, the light guide structure 124 of light-emitting diode 120 is with Ellipsoidal Surface 230 butts or in abutting connection with the plane of incidence 112 of light guide plate 110.The bottom surface 220 of two semiellipsoids 200 of light guide structure 124 is parallel to the plane of incidence 112 in fact.The long limit 116 of the major axis 240 direction almost parallel planes of incidence 112 of each bottom surface 220, and the direction of minor axis 242 is roughly parallel to the minor face 118 of the plane of incidence 112.Composition surface 210 in the light guide structure 124 is parallel to exiting surface 114 in fact and perpendicular to the plane of incidence 112.
In an embodiment of the present invention, several light-emitting diodes 120 are spaced along the long limit 116 of the plane of incidence 112.As previously mentioned, the interval between wantonly two light-emitting diodes 120 needs especially that the light-emitting diode 120 of both sides provides light.Therefore in the horizontal direction, promptly on long limit 116 directions of light guide plate 110 planes of incidence 112, just along the direction of the X-axis that Fig. 2 indicated, the subtended angle of light-emitting diode 120 bright dippings must reach greatly to shine part at interval, in order to avoid produce blanking bar, cause uneven phenomenon in the interval part.In other words, the light that luminescence chip 122 is sent must have the optical field distribution than wide-angle through after the guiding of light guide structure 124 on major axis 240 directions of parallel conductive photo structure 124 bottom surfaces 220.
On the other hand, in vertical direction, promptly on minor face 118 directions of light guide plate 110 planes of incidence 112, just along the direction of the Z axle that Fig. 2 indicated.Trend based on light guide plate 110 slimmings, the thickness of light guide plate 110 will shorten gradually, therefore the light field of the vertical direction of light-emitting diode 120 must restrain, and makes all light can both enter light guide plate 110 inside, to avoid the situation that light leak and luminous efficiency reduce.In other words, the light that luminescence chip 122 is sent must have the optical field distribution of smaller angle through after the guiding of light guide structure 124 on minor axis 242 directions of parallel its bottom surface 220.
Please refer to Fig. 3 A and Fig. 4.Fig. 4 illustrates the distribution of light intensity distribution map of light guide structure 124.The distribution of light intensity distribution map is the distribution scenario that is used for representing by the light intensity corresponding angle that Ellipsoidal Surface 230 is conducted of light guide structure 124.
The transverse axis of distribution of light intensity distribution map is represented angle, is defined as 0 degree perpendicular to the direction of the bottom surface 220 of light guide structure 124, tilts for just towards clockwise direction, is defined as 90 and spends up to being parallel to bottom surface 220.Otherwise,, be defined as-90 degree up to parallel bottom surface 220 counterclockwise for negative.Though note that in follow-up narration angle represented to be used as explanation with positive number.Yet based on symmetry, though described angle should be clockwise angle, should be identical yet change along the corresponding distribution of light intensity of anticlockwise angle.
The longitudinal axis of distribution of light intensity distribution map is represented distribution of light intensity, and longitudinal axis numerical value is the numerical value after the measured value normalization of distribution of light intensity, and meaning is the ratio of measured value of the corresponding maximum light intensity of measured value of each luminous intensity.
Please also refer to Fig. 4 and Fig. 5 A.Fig. 5 A illustrates the end view of the backlight module 100 that goes out as shown in Figure 2.Two data and curves have been shown among Fig. 4,1 expression of first curve A distributes along the distribution of light intensity on minor axis 242 directions of light guide structure 124, meaning is the distribution of light intensity intensity distributions of the subtended angle of light in vertical direction, and just the distribution of light intensity of the Z axle that is indicated along Fig. 5 A distributes.
By the distribution of light intensity distribution map as can be known, when angle 0 spend to 40 the degree between the time, distribution of light intensity all can maintain more than 0.4.When angle when spending greater than 40, its distribution of light intensity reduces and gradually less than half of maximum light intensity.Hence one can see that, and light guide structure 124 can make light intensity increase and contraction significantly along the subtended angle of minor axis 242 directions, light field can be restrained, to reduce light leak probability that takes place and the luminous efficiency that improves backlight module.
Please also refer to Fig. 4 and Fig. 5 B.Fig. 5 B illustrates the partial top view of the backlight module 100 that goes out as shown in Figure 2.The expression of second curve A 2 distributes along the distribution of light intensity on major axis 240 directions of light guide structure 124, and meaning is the subtended angle distribution of light intensity intensity distributions in the horizontal direction of light, and just the distribution of light intensity of the X-axis that is indicated along Fig. 5 B distributes.By the distribution of light intensity distribution map as can be known, when angle 0 when spending between 60 degree, distribution of light intensity all can maintain more than 0.6, i.e. largest light intensity more than 60%.When angle for being approximately 70 when spending, measured distribution of light intensity is about 0.5, i.e. half of maximum light intensity.After angle was greater than 70 degree, distribution of light intensity just diminished gradually.Hence one can see that, and the light intensity of the light that luminescence chip 122 is sent after via light guide structure 124 orientations can not reduce fast even subtended angle increases its distribution of light intensity on major axis 240 directions, otherwise still can keep the light field of suitable intensity.In other words, light field has the effect that wide-angle is dispersed in the horizontal direction, and then can reduce the probability that blanking bar takes place.
Please refer to Fig. 6.Fig. 6 illustrates the stereogram according to the light guide structure 124 of another embodiment of the present invention.In order to improve the degree of the convergence of light field on the vertical direction, and improve the service efficiency of light, in the present embodiment, further be provided with light guide structure 126 in the light guide structure 124, with light reflection with wide-angle in the vertical direction.
The Ellipsoidal Surface 230 that light guide structure 126 is arranged at light guide structure 124 is 220 minor axis 242 parts in abutting connection with the bottom surface.In detail, light guide structure 126 is positioned on the Ellipsoidal Surface 230 of light guide structure 124, and is positioned at Ellipsoidal Surface 230 on the zone of the minor axis 242 of bottom surface 220.
The kind of light guide structure 126 has a variety of, for instance, can utilize the high material of reflection coefficient to reflect, and the high reflectance material comprises metal coating, reflection site, multilayer film or reflector plate.In addition, also can utilize structural change to make light reflection or refraction and reach the effect of convergence, for example use modes such as grating or holes, vee-cut shape micro-structural or other microstructures, the light that can will disperse is directed to positive bright dipping.But the invention is not restricted to this, also can select material, classification and its distributing position of required light guide structure according to actual demand.
The material of light guide structure 124 mainly can comprise the optical material that guides light, it similarly is the plastics of light-permeable, as polymethyl methacrylate (polymethylmethacrylate, PMMA), polyethylene terephthalate (polyethylene terephthalate, PET) or Merlon (poly Carbonate, PC) or its combination etc.In addition, the material of light guide structure 124 also can be the resin of light-permeable, as silica resin (silicone) or epoxy resin (epoxy) or its combination etc.In the preferred embodiment, light guide structure 124 includes filling glue, and just light guide structure can combine with encapsulation step, will fill glue and mould into required light guide structure when encapsulation.But the invention is not restricted to this, light guide structure also can be additional on the light-emitting diode after encapsulation step is finished, and can adjust according to actual demand.
In addition, please refer to Fig. 6, can have a plurality of particulates 250 in the light guide structure 124 and intersperse among wherein.Particulate 250 can comprise fluorescent particles, phosphorescent particle, diffusion particle, heat radiation particle or its combination etc.Fluorescent particles or phosphorescent particle can be arranged in pairs or groups corresponding luminescence chip and be obtained required light wavelength.But the uniformity of diffusion particle auxiliary light emission diode light-source.But the heat radiation of heat radiation particle auxiliary light emission diode.When encapsulation, particulate 250 can be distributed in and fill in the glue, and will fill glue and mould into required light guide structure.
By each embodiment of the invention described above as can be known, the structure of light guide structure is relevant with distribution of light intensity and angular distribution.Become two two elliposoidals that the olive spheroid is arranged side by side by shaped design with the surface that spreads out of light of light guide structure, make the light of sending out in the horizontal direction with vertical direction on intensity different with angular distribution.Wherein, has the effect that the light field wide-angle is dispersed in the horizontal direction, to reduce the probability that blanking bar takes place.And it has the effect that the light field of making restrains in vertical direction, makes all light to concentrate, and reduces the puzzlement of light leak.
Though the present invention discloses as above with a plurality of embodiment; yet it is not in order to limit the present invention; any those of ordinary skills; without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking appended the scope that claim defined.
Claims (22)
1. light-emitting diode comprises at least:
One luminescence chip; And
One light guide structure is positioned on this luminescence chip, and has a pair of semiellipsoid and engage side by side and along a composition surface each other, and wherein each described semiellipsoid comprises:
One bottom surface, in abutting connection with this composition surface, this bottom surface is an imperfect ellipse and has a major axis and a minor axis that wherein this major axis and this minor axis occur simultaneously in a mid point, and this composition surface is in abutting connection with this minor axis; And
One Ellipsoidal Surface, in abutting connection with this composition surface and this bottom surface, wherein a maximum perpendicular spacing of this Ellipsoidal Surface and this bottom surface is greater than a maximum height on this composition surface.
2. light-emitting diode as claimed in claim 1, wherein this bottom surface is that center line is mutually symmetrical with this minor axis.
3. light-emitting diode as claimed in claim 1, wherein the distance at the edge of this mid point along this long axis direction to this bottom surface is one first length, the distance at the edge of this mid point along this short-axis direction to this bottom surface is one second length, and a maximum perpendicular spacing of this Ellipsoidal Surface and this bottom surface is greater than this second length.
4. light-emitting diode as claimed in claim 3, wherein this first length is more than or equal to the twice of this second length.
5. light-emitting diode as claimed in claim 3, wherein this maximum perpendicular spacing of this Ellipsoidal Surface and this bottom surface is more than or equal to the twice of this second length.
6. light-emitting diode as claimed in claim 3, wherein a minimum spacing on this mid point and this composition surface is one the 3rd length, and the 3rd length is less than this second length.
7. light-emitting diode as claimed in claim 6, wherein the 3rd length is less than or equal to 1/2nd of this second length.
8. light-emitting diode as claimed in claim 1, wherein this light guide structure coats this luminescence chip.
9. light-emitting diode as claimed in claim 1, wherein the material of this light guide structure comprises filling glue.
10. light-emitting diode as claimed in claim 1, wherein this light guide structure comprises a plurality of particulates.
11. light-emitting diode as claimed in claim 1, wherein this luminescence chip is arranged in this bottom surface of this light guide structure and this composition surface in abutting connection with part.
12. light-emitting diode as claimed in claim 1 also comprises at least one smooth guide structure and is arranged on this Ellipsoidal Surface this minor axis part in abutting connection with this bottom surface.
13. light-emitting diode as claimed in claim 12, wherein this light guide structure is a metal coating, reflection site, multilayer film, reflector plate, grating, holes or vee-cut.
14. light-emitting diode as claimed in claim 1, wherein this to semiellipsoid with respect to this composition surface minute surface symmetry each other each other.
15. a backlight module comprises at least:
One light guide plate; And
One light-emitting diode, in abutting connection with this light guide plate, comprise a luminescence chip and a light guide structure, this light guide structure is positioned on this luminescence chip, and this light guide structure is between this luminescence chip and this light guide plate, and have a pair of semiellipsoid and engage side by side and along a composition surface each other, wherein each described semiellipsoid comprises:
One bottom surface, in abutting connection with this composition surface, this bottom surface is an imperfect ellipse and has a major axis and a minor axis that wherein this major axis and this minor axis occur simultaneously in a mid point, and this composition surface is in abutting connection with this minor axis; And
One Ellipsoidal Surface, in abutting connection with this composition surface and this bottom surface, wherein a maximum perpendicular spacing of this Ellipsoidal Surface and this bottom surface is greater than a maximum height on this composition surface.
16. backlight module as claimed in claim 15, wherein this bottom surface is parallel with a plane of incidence essence of this light guide plate.
17. backlight module as claimed in claim 15, wherein this composition surface is parallel with an exiting surface essence of this light guide plate.
18. backlight module as claimed in claim 15, wherein this luminescence chip is arranged in this bottom surface of this light guide structure and this composition surface in abutting connection with part.
19. backlight module as claimed in claim 15, wherein the distance at the edge of this mid point along this long axis direction to this bottom surface is one first length, the distance at the edge of this mid point along this short-axis direction to this bottom surface is one second length, and a maximum perpendicular spacing of this Ellipsoidal Surface and this bottom surface is greater than this second length.
20. backlight module as claimed in claim 19, wherein this maximum perpendicular spacing of Ellipsoidal Surface and this bottom surface is more than or equal to the twice of this second length.
21. backlight module as claimed in claim 19, wherein a minimum spacing on this mid point and this composition surface is one the 3rd length, and the 3rd length is less than this second length.
22. backlight module as claimed in claim 21, wherein the 3rd length is less than or equal to 1/2nd of this second length.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008101855779A CN101425557B (en) | 2008-12-17 | 2008-12-17 | Backlight module and LED thereof |
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|---|---|---|---|
| CN2008101855779A CN101425557B (en) | 2008-12-17 | 2008-12-17 | Backlight module and LED thereof |
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| CN101425557A CN101425557A (en) | 2009-05-06 |
| CN101425557B true CN101425557B (en) | 2010-06-02 |
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| CN110473950A (en) * | 2019-07-26 | 2019-11-19 | 惠州市华星光电技术有限公司 | Backlight module and display panel |
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|---|---|---|---|---|
| CN1577903A (en) * | 2003-07-25 | 2005-02-09 | Seoul半导体株式会社 | Chip light emitting diode and fabrication method thereof |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577903A (en) * | 2003-07-25 | 2005-02-09 | Seoul半导体株式会社 | Chip light emitting diode and fabrication method thereof |
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| CN101425557A (en) | 2009-05-06 |
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