CN101424842A - LCD device - Google Patents
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- CN101424842A CN101424842A CNA2007100477415A CN200710047741A CN101424842A CN 101424842 A CN101424842 A CN 101424842A CN A2007100477415 A CNA2007100477415 A CN A2007100477415A CN 200710047741 A CN200710047741 A CN 200710047741A CN 101424842 A CN101424842 A CN 101424842A
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Abstract
The invention relates to a liquid crystal display device which comprises grid electrode scanning lines mutually arranged in parallel, data lines and public electrode lines vertical and parallel to the grid electrode scanning lines, sub pixels surrounded by the grid electrode scanning lines, the data lines and the public electrode lines, and pixel electrodes corresponding to all the sub pixels, wherein two transistors are contained in each sub pixel; three ends of one transistor are respectively connected with the grid scanning lines, the data lines and the pixel electrodes; and three ends of another transistor are respectively connected with the grid scanning lines, the public electrode lines and the public electrodes. The liquid crystal display device can eliminate afterimages in the display device.
Description
Technical field
The present invention relates to liquid crystal indicator, particularly can eliminate the transverse electric field formula liquid crystal indicator of image retention function.
Background technology
Most shares that advantages such as thin-film transistor LCD device is frivolous with it, power saving, environmental protection have been captured the monitor market gradually.Along with popularizing of liquid crystal indicator, feasible performance requirement to liquid crystal indicator increases gradually, such as high brightness, high-contrast, wide angle of visibility, high chroma territory, high response speed etc.In addition, people require also more and more higher to image quality such as the Mu La of liquid crystal indicator, image retentions.
Image retention is the defective that the liquid crystal indicator size is done a highly significant of big back existence, and in transverse electric field formula liquid crystal indicator, the image retention defective is very obvious especially.Image retention is meant when LCD is long-time and shows a fixing picture that when picture was switched to next picture, original fixing picture can remain in the next picture.From the time angle, image retention is divided into long-term image retention and short-term image retention.From shaped angles, image retention is divided into face image retention and line image retention.
In liquid crystal indicator, liquid crystal molecule can not be fixed on some voltage always, and just a certain state is constant, otherwise the characteristic of liquid crystal molecule can be destroyed, and can't rotate in response to the variation of electric field again, to form different GTGs.In order to tackle this extreme case of the picture that shows same GTG always, the display voltage in the LCD just has been divided into two kinds of polarity, and one is positive polarity, and another is a negative polarity.When the voltage of show electrode is higher than public electrode voltages, just be referred to as positive polarity.And when the voltage of show electrode is lower than the voltage of public electrode, just be referred to as negative polarity.No matter be positive polarity or negative polarity, the GTG of one group of same brightness can be arranged all.So when liquid crystal panel up and down the pressure reduction absolute value of layer glass be fixedly the time, this voltage difference is similar to be a kind of alternating voltage.Under desirable AC field situation, be this defective of image retention to occur in the liquid crystal panel.
The appearance of image retention needs two pacing itemss: one is the ion-type impurity, and one is the DC voltage composition.When the DC voltage composition occurring in the panel of liquid crystal indicator, can move along this DC electric field direction for the ion-type impurity in the liquid crystal panel, and accumulate on the alignment film.DC electric field is big more, and the ion-type impurity of gathering is just many more.Same picture, the time that just same DC electric field occurs is of a specified duration more, and the ion-type impurity of gathering also can be many more.The ion that gathers together can form one with the opposite DC electric field of original DC electric field direction.This reverse DC electric field that forms when the ion concentration of assembling be enough to change liquid crystal indicator see through efficient the time, will cause the display effect of liquid crystal indicator difference to occur.That is to say, when liquid crystal indicator when a last fixed image switches to next picture, DC electric field originally disappears, but the ion that accumulates on the alignment film can't leave alignment film at once, and make this reverse DC electric field exist, to continue to keep the image of an original last picture, therefore image retention, just so-called image retention appear.
As mentioned above, the appearance of image retention needs two pacing itemss: one is the ion-type impurity, and one is the DC voltage composition.Eliminate any one pacing items and can eliminate image retention.The ion-type impurity is mainly from various materials in the liquid crystal panel, equipment and the clean room on the production line.Portion's material in the liquid crystal panel mainly concentrates on liquid crystal, alignment film, sealing-in glue, color membrane substrates and array base palte etc., wherein a part of ion brings by material itself is impure, and a part of ion is brought into owing to voltage, high temperature, illumination etc. cause portion's material to decompose in process engineering.From the ion-type impurity in portion's material, equipment and clean room is impossible eliminate, and unique what can do is exactly raising cleanliness factor separately.As a main composition of DC voltage composition is feedback (Feedthrough) voltage in the liquid crystal panel.Shown in the following formula (1) of the formula of Feedthrough voltage Vft:
Wherein, C1c represents that liquid crystal capacitance, Csc represent that memory capacitance, Cdpi represent that the pixel electrode of display unit both sides and the coupling capacitance between the data line, Cgs represent that coupling capacitance, Vgon and Vgoff between transistor source and the grid represents the on-state voltage and the OFF state voltage of controlling grid scan line respectively.From formula (1) as can be seen Csc, Cdpi1, Cdpi2 and Cgs in time with the space on the size fix substantially.The difference in size of Feedthrough voltage Vft is main relevant with controlling grid scan line voltage difference (Vgon-Vgoff) with liquid crystal capacitance C1c.GTG is different, and the DIELECTRIC CONSTANT of liquid crystal is different, so liquid crystal capacitance C1c is just different.Along controlling grid scan line since about exist distribution to postpone, the size of voltage difference (Vgon-Vgoff) is different.In transverse electric field formula liquid crystal indicator, the DIELECTRIC CONSTANT of used liquid crystal is all bigger than the liquid crystal specific inductive capacity of other display modes, thereby makes under the different GTGs, and the Feedthrough voltage Vft that is brought by liquid crystal capacitance C1c is bigger.
No matter be the Feedthrough voltage Vft that is caused by liquid crystal capacitance C1c, still the Feedthrough voltage Vft that is caused by controlling grid scan line voltage difference (Vgon-Vgoff) can form DC voltage, thereby cause image retention in liquid crystal panel.In order to tackle the image retention problem that this DC voltage of Vft causes, method relatively more commonly used is at present carried out the contrast revisal exactly.But, some unfavorable factors below the contrast revisal exists: such as, contrast descends; Pixel voltage no longer is the desirable alternating voltage of positive and negative equivalence, accumulates flip-flop easily and causes flicker.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of liquid crystal indicator, and this liquid crystal indicator has the image retention of elimination function.
For achieving the above object, the invention provides a kind of liquid crystal indicator, it comprises the controlling grid scan line that is arranged parallel to each other, form vertical with controlling grid scan line and data line that be parallel to each other and public electrode wire, controlling grid scan line, data line, the sub-pixel that public electrode wire surrounds, each sub-pixel has corresponding pixel electrode, its substantive distinguishing features is, contain two transistors in each sub-pixel, transistorized three ends are connecting controlling grid scan line respectively, data line and pixel electrode, another transistorized three ends are connecting controlling grid scan line respectively, public electrode wire and public electrode.
The present invention is owing to adopted above-mentioned technical scheme, make it compared with prior art, have following advantage and good effect: the present invention can eliminate the image retention problem in the crystal device, and because that transverse electric field formula liquid crystal indicator provided by the invention can carry out the public electrode current potential is independently-powered, so how many pixel electrode current potentials departs from and can both carry out revisal by the public electrode current potential.Like this, under the condition of amplifying the bias of pixel electrode potential, just can relax every index that those can cause that the pixel electrode current potential departs from.Such as, the value that can reduce memory capacitance Csc improves aperture opening ratio, and the difference that also can amplify (Vgon-Vgoff) simultaneously improves aperture opening ratio.
Description of drawings
Fig. 1 is the equivalent circuit diagram of liquid crystal indicator pin row substrate one side of the present invention;
Fig. 2 is a liquid crystal indicator sub-pixel structure synoptic diagram of the present invention;
The storage capacitor construction synoptic diagram of Fig. 3 for overlapping to form by pixel electrode and public electrode wire;
Fig. 4 A and Fig. 4 B are respectively public electrode voltages not to be had before the revisal and the pixel voltage view after the revisal.
Embodiment
Below with reference to accompanying drawing liquid crystal indicator of the present invention is described in further detail.
Fig. 1 is the equivalent circuit diagram of liquid crystal indicator pin row substrate one side of the present invention; Fig. 2 is a liquid crystal indicator sub-pixel structure synoptic diagram of the present invention.As depicted in figs. 1 and 2, liquid crystal indicator of the present invention comprises: array basal plate, in array base palte one side the controlling grid scan line Gn that is arranged parallel to each other (n=1～n) is arranged, form vertical with controlling grid scan line and data line Dm that be parallel to each other (m=1～m) and public electrode wire COMm (m=1～m), be to be spaced between data line Dm and the public electrode wire, by controlling grid scan line Gn, data line Dm, public electrode wire COMm surrounds many display units, each display unit is a sub-pixel, and each sub-pixel is by pixel electrode PX, public electrode Cd, memory capacitance Cs and two transistor Ts 1, assemblies such as T2 constitute.Two transistor Ts 1 among each sub-pixel PX, the grid of T2 same the sweep trace Gn that all in succession, transistor T 1 other end that the connects data line Dm pixel electrode PX that ins succession, and transistor T 2 other ends that the connect public electrode wire COMm public electrode Cd that ins succession.Wherein, pixel electrode PX and public electrode wire COMm overlap to form memory capacitance.
Compare with traditional transverse electric field formula liquid crystal indicator, liquid crystal indicator provided by the invention has mainly been realized the pixelation of public electrode current potential in array base palte one side.Data line is the same to sub-pixel input pixel electrode current potential by the transistor that links to each other, and the public electrode wire that is parallel to data line passes through to link to each other transistor to sub-pixel input public electrode current potential.Form voltage difference from the pixel electrode current potential of data line input with from the public electrode current potential that public electrode wire is imported, show required pixel voltage value exactly.
The storage capacitor construction synoptic diagram of Fig. 3 for overlapping to form by pixel electrode and public electrode.As shown in Figure 3, pixel electrode PX and public electrode Cd overlap to form memory capacitance Csc, and pixel electrode PX and public electrode Cd are arranged in parallel in opposite directions and form transverse electric field formula liquid crystal indicator.The public electrode Cd of each display unit is separate, and common electrical limit position is imported on the public electrode Cd by the transistor that is positioned at each display unit from the public electrode wire parallel with data line.The current potential of pixel electrode PX is imported from data line by transistor T 1.Public electrode Cd current potential is imported from public electrode COMm line by transistor T 2.The public electrode current potential of being imported in each sub-pixel carries out revisal according to the variation of pixel electrode current potential, and compensating value depends on the size and the residing physical location of this sub-pixel of pixel electrode PX current potential.
The revisal process of public electrode current potential is as follows: at first, determine the pixel voltage size of this sub-pixel of the revisal of wanting, determine the value of pairing liquid crystal capacitance C1c with this; Then, determine the residing position of this sub-pixel of the revisal of wanting, and calculate the signal delay that scanning-line signal arrives this sub-pixel, thereby obtain controlling grid scan line voltage difference (Vgon-Vgoff); Then, calculate Feedthrough magnitude of voltage Vft according to formula (1).At last, before the data line signal input, find the compensating value of public electrode current potential, just on the basis of public electrode current potential design load, add or deduct the Feedthrough magnitude of voltage Vft that obtains the front by look-up table.
As shown in Figure 1, below in conjunction with the revisal process of specific embodiment explanation public electrode current potential, along with controlling grid scan line Gn, beginning most and backmost respectively to a sub-pixel α and sub-pixel β should be arranged.Sub-pixel α and sub-pixel β corresponding to display unit be respectively red and blue.In ensuing analysis, set sub-pixel α and be complete black state, promptly light tight, show black; And sub-pixel β is complete white state, and both printing opacity showed blue.
In transverse electric field formula liquid crystal indicator provided by the invention, each parameter value is as follows in the sub-pixel:
Liquid crystal capacitance C1c-w=204.9fF under the complete white state;
Liquid crystal capacitance C1c-b=136.3fF under the complete black state;
Memory capacitance Csc=546.2fF;
Coupling capacitance Cgs=23.8fF between transistor source and the grid;
Coupling capacitance Cgpi=5.4fF between controlling grid scan line and the pixel electrode;
Coupling capacitance Cdpi=30.2fF between pixel electrode and the data line;
Controlling grid scan line on-state voltage Vgon=27.5V;
Controlling grid scan line OFF state voltage Vgoff=-5.5V;
The standard value of public electrode current potential, just the central value Vdc=6.5V of data line signal.
According to top parameter information, utilize formula (1) can obtain sub-pixel α and the display frame separately of sub-pixel β correspondence, i.e. Feedthrough magnitude of voltage under the Dui Ying liquid crystal capacitance:
Sub-pixel α:
... formula (2)
Sub-pixel β:
... formula (3)
For sub-pixel α and sub-pixel β, owing to be in the rear and front end of same controlling grid scan line separately respectively, be subjected to the influence that the controlling grid scan line distribution postpones, the difference of the grid voltage of two sub-pixels (Vgon-Vgoff) is different.Thereby it also is different causing the Feedthrough voltage Vft about controlling grid scan line.The difference solution procedure of this left and right sides Feedthrough voltage Vft is as follows:
Set the RC time constant T g=2.9 of controlling grid scan line;
The write time t=16.5um of each row of sub-pixel;
Liquid crystal capacitance C1c-m=182fF when being in the middle GTG between the black and white state;
So, the Feedthrough voltage swing of middle GTG is:
Sub-pixel α and sub-pixel β left and right sides Feedthrough voltage difference are:
The result of formula (5) shows, by the Feedthrough voltage that the difference of grid voltage (Vgon-Vgoff) causes, sub-pixel α goes out 0.21V greatly than sub-pixel β.
So take all factors into consideration the Feedthrough voltage that causes by liquid crystal capacitance C1c and, can draw by the Feedthrough voltage that the difference of grid voltage (Vgon-Vgoff) causes:
Feedthrough voltage Vft-α=1.30 of sub-pixel α,
Feedthrough voltage Vft-β=1.19-0.21=0.98V of sub-pixel β.
After obtaining the Feedthrough magnitude of voltage of sub-pixel α and sub-pixel β, the public electrode current potential to sub-pixel α and sub-pixel β carries out revisal respectively.Because Feedthrough voltage Vft undercuts the absolute value of pixel electrode current potential toward negative direction, so the revisal of public electrode current potential is exactly the Vft value that deducts on the basis of standard public electrode voltages separately:
The public electrode current potential of sub-pixel α is: 6.5-1.30=5.2V
The public electrode current potential of sub-pixel β is: 6.5-0.98=5.52V
After public electrode current potential after the revisal and pixel electrode current potential imported respectively, public electrode voltages was consistent with the central value of pixel voltage, that is to say that the pixel voltage between public electrode and the pixel electrode is exactly the desired voltage that designing institute needs.Is exactly a desirable alternating voltage through the pixel voltage after the revisal in positive frame and negative frame.Thereby eliminated possibility owing to inconsistent formation dc offset voltage between positive and negative frame pixel voltage central value and the public electrode voltages.Like this, after top public electrode current potential revisal processing, just no longer produce the DC electric field of setovering between the GTG and between the different physical location.This has just fundamentally eliminated a key factor that causes image retention: the direct current biasing electric field, the result can eliminate image retention exactly effectively.
Fig. 4 A is the pixel voltage view before public electrode voltages does not have revisal, Fig. 4 B is the pixel voltage view of public electrode voltages after revisal, wherein, L1 represents white attitude pixel electrode current potential central value, L2 represents public electrode voltages, L3 represents black attitude pixel electrode current potential central value, and L4 represents complete white attitude public electrode voltages value, and L5 represents black full attitude public electrode voltages value.Public electrode voltages is through after the revisal, and as can be seen, public electrode voltages is consistent with the central value of pixel voltage from Fig. 4 B.Like this, no matter be complete white state or complete black state, pixel voltage all is positive and negative symmetry for public electrode voltages separately, is desirable alternating voltage distributions.Thereby eliminated the possibility that forms dc offset voltage between the sort of pixel voltage central value shown in Fig. 4 A and the public electrode voltages.This has just fundamentally eliminated a very important factor that causes image retention: the dc offset voltage that is caused by Feedthrough voltage Vft.So, adopt transverse electric field formula liquid crystal indicator provided by the invention can eliminate image retention effectively.
The revisal of public electrode current potential can also superpose because the bias voltage value that other reasons causes the pixel electrode potential change to form except Feedthrough voltage Vft of stack on original public electrode current potential design load basis.Such as, different data line signal by stray capacitance Cdpi can pixel electrode aside on the bias voltage of different sizes of stack.Under the situation of known this data line signal size, stray capacitance Cdpi and pixel total capacitance Cpix, can obtain this bias voltage size that is superimposed upon on the pixel electrode.After public electrode current potential pixelation is handled, just can eliminate the influence that stray capacitance Cdpi brings by the identical bias voltage of the opposite size of polarity of stack on original public electrode current potential.
In order to realize the display unit of above-mentioned liquid crystal indicator, can finish by following method manufacturing: at first, use magnetically controlled sputter method, deposition one layer thickness exists on transparent glass substrate
Extremely
The first metal layer.The material of the first metal layer can use metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper.Also can use the combination of above-mentioned different materials film.By exposure technology and etching process, on certain zone of glass-based, form patterns such as controlling grid scan line, gate electrode with the first metal layer mask plate.
Then, utilize chemical vapor deposited method successive sedimentation thickness on the array base palte of finishing the first metal layer pattern to exist
Extremely
Grid electrode insulating layer film and thickness exist
Extremely
Amorphous silicon membrane.Grid electrode insulating layer film material can use silicon nitride, also can use monox and silicon oxynitride etc.Behind the mask board to explosure with active layer amorphous silicon layer is carried out etching process, form the silicon island.
Then, adopt and the similar preparation method of the first metal layer, deposition one layer thickness exists on array base palte
Extremely
The second metal level film.In certain zone, form data line, public electrode wire, public electrode and patterns such as transistorized source electrode, drain electrode by the second metal mask layer plate.
Then, deposition one layer thickness exists on whole array base palte
Extremely
Passivation layer.Its material can be a silicon nitride, also can be monox or silicon oxynitride.By the mask plate of passivation layer, utilize exposure technology and etching process to form passivation layer via hole being connected on the transistor source of data line.
At last, deposition one layer thickness exists on substrate
Extremely
The electrically conducting transparent layer film.Its material mainly be tin indium oxide (Indium Tin Oxide, ITO).Use the transparency conducting layer mask plate,, form pixel electrode, and cover via hole by exposure technology and etching process.After pixel electrode covers above the public electrode wire, be that medium forms the memory capacitance between public electrode wire and the pixel electrode with the passivation layer.
The above embodiment that proposes is a kind of implementation method, and other implementation method also can be arranged, and finishes by selecting different materials or combination of materials.Design concept provided by the invention can also be applied to fringe field switching formula liquid crystal indicator except applying to common transverse electric field formula liquid crystal indicator.
That more than introduces only is based on preferred embodiment of the present invention, can not limit scope of the present invention with this.Any measurement mechanism of the present invention is done replacement, the combination, discrete of step well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection domain.
Claims (10)
1. liquid crystal indicator, it comprises the controlling grid scan line that is arranged parallel to each other, form vertical with controlling grid scan line and data line that be parallel to each other and public electrode wire, the sub-pixel that controlling grid scan line, data line, public electrode wire surround, each sub-pixel has corresponding pixel electrode, it is characterized in that, contain two transistors in each sub-pixel, transistorized three ends are connecting controlling grid scan line, data line and pixel electrode respectively, and another transistorized three ends are connecting controlling grid scan line, public electrode wire and public electrode respectively.
2. liquid crystal indicator as claimed in claim 1 is characterized in that, the controlling grid scan line that described two transistors connect is a same controlling grid scan line.
3. liquid crystal indicator as claimed in claim 1 is characterized in that, described each sub-pixel has public electrode.
4. liquid crystal indicator as claimed in claim 3 is characterized in that the public electrode of described each sub-pixel is separate.
5. liquid crystal indicator as claimed in claim 3 is characterized in that, the public electrode and the pixel electrode of described each sub-pixel overlap to form memory capacitance.
6. liquid crystal indicator as claimed in claim 3 is characterized in that the public electrode of described each sub-pixel and data line are formed by same metal level.
7. liquid crystal indicator as claimed in claim 3 is characterized in that, the public electrode current potential of being imported in described each sub-pixel carries out revisal according to the variation of pixel electrode current potential.
8. liquid crystal indicator as claimed in claim 7 is characterized in that, the size of described revisal depends on the size and the residing physical location of this sub-pixel of pixel electrode current potential.
9. liquid crystal indicator as claimed in claim 1 is characterized in that, the public electrode wire and the pixel electrode of described each sub-pixel overlap to form memory capacitance.
10. liquid crystal indicator as claimed in claim 1 is characterized in that described data line and public electrode wire are formed by same metal level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100477415A CN101424842A (en) | 2007-11-02 | 2007-11-02 | LCD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100477415A CN101424842A (en) | 2007-11-02 | 2007-11-02 | LCD device |
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| CN101424842A true CN101424842A (en) | 2009-05-06 |
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| CNA2007100477415A Pending CN101424842A (en) | 2007-11-02 | 2007-11-02 | LCD device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018988A (en) * | 2012-12-06 | 2013-04-03 | 京东方科技集团股份有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array substrate, manufacturing method thereof and display device |
| CN104536177A (en) * | 2014-12-31 | 2015-04-22 | 深圳市华星光电技术有限公司 | Image sticking eliminating method and liquid crystal display |
| CN107293242A (en) * | 2017-08-11 | 2017-10-24 | 京东方科技集团股份有限公司 | Method of testing, making and its control method of liquid crystal display device, device |
| CN109036315A (en) * | 2018-09-06 | 2018-12-18 | 京东方科技集团股份有限公司 | Driving method, driving device and the display equipment of display panel |
| CN113376906A (en) * | 2021-08-12 | 2021-09-10 | 惠科股份有限公司 | Color film substrate and display device |
-
2007
- 2007-11-02 CN CNA2007100477415A patent/CN101424842A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018988A (en) * | 2012-12-06 | 2013-04-03 | 京东方科技集团股份有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array substrate, manufacturing method thereof and display device |
| CN104536177A (en) * | 2014-12-31 | 2015-04-22 | 深圳市华星光电技术有限公司 | Image sticking eliminating method and liquid crystal display |
| CN107293242A (en) * | 2017-08-11 | 2017-10-24 | 京东方科技集团股份有限公司 | Method of testing, making and its control method of liquid crystal display device, device |
| CN109036315A (en) * | 2018-09-06 | 2018-12-18 | 京东方科技集团股份有限公司 | Driving method, driving device and the display equipment of display panel |
| CN113376906A (en) * | 2021-08-12 | 2021-09-10 | 惠科股份有限公司 | Color film substrate and display device |
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