CN101420009A - Production process for golden electrode for LED - Google Patents
Production process for golden electrode for LED Download PDFInfo
- Publication number
- CN101420009A CN101420009A CNA2008102194542A CN200810219454A CN101420009A CN 101420009 A CN101420009 A CN 101420009A CN A2008102194542 A CNA2008102194542 A CN A2008102194542A CN 200810219454 A CN200810219454 A CN 200810219454A CN 101420009 A CN101420009 A CN 101420009A
- Authority
- CN
- China
- Prior art keywords
- gold
- preparation
- electrode
- layer
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000010931 gold Substances 0.000 claims abstract description 86
- 229910052737 gold Inorganic materials 0.000 claims abstract description 84
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 80
- 238000002360 preparation method Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 238000001704 evaporation Methods 0.000 claims description 35
- 230000008020 evaporation Effects 0.000 claims description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 150000004820 halides Chemical class 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 claims description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 20
- 238000006722 reduction reaction Methods 0.000 abstract description 9
- 239000003638 chemical reducing agent Substances 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 23
- 239000000126 substance Substances 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- JEOOVNWNJKBHRG-UHFFFAOYSA-N [Na+].[S--].[S--].[Au+3] Chemical compound [Na+].[S--].[S--].[Au+3] JEOOVNWNJKBHRG-UHFFFAOYSA-N 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- 238000005275 alloying Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000002343 gold Chemical class 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 239000000872 buffer Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 238000004500 asepsis Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- -1 gold ion Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode gold electrode preparation method, which comprises the following steps: firstly, an ohmic-contact metal layer and a thin gold layer undergo vapour-deposition successively, and then the chemical reduction gold plating is adopted to precipitate a gold layer with a required thickness on the surface of the thin gold layer undergoing the vapour-deposition, so that the preparation of the light-emitting diode gold electrode is completed. The method adopts the chemical reduction gold plating method to prepare the gold electrode, so as to save significantly the consumption of gold, and lower the cost of raw material. The preparation method is simple in operation, and the storage of plating solution is stable. The prepared gold electrode has the advantages of high purity, smooth and bright surface, compactness and uniformity, has no pin-hole cracks or other defects, and is firmly combined.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to the preparation method of golden electrode for LED.
Background technology
Light-emitting diode (LED) is a kind of electric energy to be converted into the luminescent device of luminous energy, is widely used in numerous areas such as indication, demonstration, decoration, illumination, becomes the necessary part of our life.
The main material of existing light-emitting diodes pipe electrode is a gold, and the general method that adopts vacuum evaporation or sputter that goes up is made.But these preparation methods can not accurately control the deposition position of gold, make most deposition of gold arrive the zone of non-electrode, cause the utilance of gold low, have wasted the high raw material of a large amount of prices, thereby have increased the production cost of light-emitting diode.
Chemical gilding can be divided into two kinds: chemical replacement method and chemical reduction method.The plating by chemical displacement gold plate as thin as a wafer, be unfavorable for extensive use, chemical reduction method is gold-plated then this phenomenon can not occur, this gold plating method not only can plate thicklyer, and the golden stratification good stability of plating, surface oxidation-resistant ability and decay resistance are also high, and conductivity, resistance to wear, solderability are all very desirable, so this gold plating method has a wide range of applications and development prospect.
The electronation gold, the external reduce deposition that often is called gold plate, be also referred to as the self-catalyzed deposition of gold, this gold plating method is current to be developed very soon in the world, it is by ornamental plating, industrial plating, develop into the high connector plating of requirement, it has following advantage: do not need electrolysis installation and auxiliary equipment 1.; No matter the plating piece geometry how, its thickness of coating is even; 3. the coating outward appearance is good; 4. can accurately control the thickness of coating.
If the electronation craft of gilding can be applied in the gold electrode preparation of light-emitting diode, then can solve current golden electrode for LED well and prepare existing problem, had not yet to see relevant report.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of preparation method of stable golden electrode for LED is provided, this method is to utilize the gold-plated method of electronation that gold is separated out to electrode position, form the high-quality gold layer of desired thickness by control plating rate and time, thereby improve the utilance of gold, reduce the manufacturing cost of Light-Emitting Diode.
Above-mentioned purpose of the present invention is achieved by following scheme:
A kind of preparation method of golden electrode for LED, this method is that first evaporation successively has the metal level of ohmic contact and the gold layer of one deck very thin thickness, adopt the gold-plated gold layer of on the thin golden laminar surface of evaporation, separating out desired thickness of electronation again, promptly finished the preparation of golden electrode for LED.
The gold layer of above-mentioned very thin thickness, i.e. gold evaporation layer, its thickness is more than or equal to 300 dusts and smaller or equal to 600 dusts (300～600 dust).
The gold-plated gold layer that obtains of above-mentioned electronation, its thickness is more than or equal to 7000 dusts and smaller or equal to 15000 dusts (7000～15000 dust).
The preparation method of above-mentioned golden electrode for LED, its detailed step is as follows:
(1) evaporation transparency conducting layer on chip P type layer; Orient the figure of P, N type layer electrode with photoresist;
(2) metal level that first evaporation has ohmic contact on transparency conducting layer, N type layer; The gold layer of evaporation one deck very thin thickness on this metal level again; Metal-stripping after evaporation is finished (Lift-off) and clean wafer;
(3) adopt the gold-plated method of electronation on the thin golden laminar surface of evaporation, to separate out the gold of desired thickness;
(4) behind the clean wafer wafer that makes gold electrode is heat-treated the preparation of promptly finishing golden electrode for LED.
In the above-mentioned steps (1), the figure of location P, N type layer electrode adopts the universal method of this area.
In the above-mentioned steps (2), clean wafer adopts Lift-off to remove unnecessary photoresist and metal earlier behind the evaporation, uses acetone and isopropyl alcohol ultrasonic oscillation clean wafers again, removes residual photoresist and organic substance.
In the above-mentioned steps (3), the gold-plated method of electronation is commonly used the gold-plated method of sulphite, the gold-plated method of halide, the gold-plated method of thiosulfate or the like.The gold-plated used chemical gold plating liquid of electronation is made up of the buffer of golden salt, complexing agent, reducing agent, stabilizer and adjusting acid-base value, does not contain cyanide, asepsis environment-protecting.The concentration of described complexing agent, reducing agent, stabilizer, buffer and golden salt can be selected collocation voluntarily according to user's needs, and it is general that agents useful for same is this area.
When the wafer that evaporation is had thin gold layer immerses in the chemical gold plating liquid, the gold ion in the chemical gold plating liquid is self-excitation catalysis under the effect of reducing agent, separates out gold in the golden laminar surface generation reduction reaction of evaporation.
Chemical equation is Au
++ e=Au ↓.
This reaction does not then take place in the zone that wafer surface does not have the covering of gold layer, so the gold that consumes in the solution all is used for the deposition of gold electrode, therefore can save a large amount of golden raw material.
In addition, chemical gold plating liquid can also be by adding golden salt and additional liquid Recycling, and stable storing is operated simple and easy.
The selection of each reaction condition parameter had certain influence to the outward appearance and the performance of Gold plated Layer during electronation of the present invention was gold-plated, and electronation is gold-plated to be 45～65 ℃ in temperature generally, and pH value is to carry out under 7～8 the condition.The recommendation response condition is: gold sodium sulfide in the chemical gold plating liquid (in gold) is 5g/L, and the pH value is 7.5, and electronation is gold-plated to be 50 ℃ in temperature.
In the above-mentioned steps (4), clean wafer can alternately wash with the deionization hydro-thermal is cold, heat treatment to wafer can be adopted following method: at nitrogen flow more than or equal to 5sccm and smaller or equal to 30sccm (5～30sccm), temperature is more than or equal under 200 ℃ and the condition smaller or equal to 350 ℃ (200～350 ℃), the wafer that makes gold electrode is heat-treated, heat treatment period more than or equal to 5min smaller or equal to 20min (5～20min).The 1sccm=1 ml/min.
Evaporation process of the present invention is those skilled in the art's common technologies in common knowledge.
Compared with prior art, the present invention has following beneficial effect:
1. the present invention adopts the gold-plated legal system of electronation to be equipped with gold electrode, and the gold that consumes in the chemical gold plating liquid all is used for the deposition of gold electrode, therefore can save a large amount of golden raw material;
2. chemical gold plating liquid can also be by golden salt of interpolation and additional liquid Recycling, stable storing, and operate simple and easy;
3. defectives such as gold electrode purity height, surface-brightening, the densification of adopting method of the present invention to make is even, needleless hole slight crack, and in conjunction with firm;
4. preparation method of the present invention provides new direction for golden electrode for LED preparation method's research.
Description of drawings
Fig. 1 is Light-Emitting Diode gold electrode preparation method's of the present invention concrete process chart;
Fig. 2 is the generalized section of the Light-Emitting Diode of keeper electrode position among the embodiment 1;
Fig. 3 is the generalized section of the light-emitting diode behind the thin gold layer of vacuum evaporation among the embodiment 1;
Fig. 4 adopts the gold-plated method of electronation to deposit the generalized section of the light-emitting diode after thicker golden layer among the embodiment 1;
Fig. 5 is the generalized section of the Light-Emitting Diode of keeper electrode position among the embodiment 2;
Fig. 6 is the generalized section of the light-emitting diode behind the thin gold layer of vacuum evaporation among the embodiment 2;
Fig. 7 adopts the gold-plated method of electronation to deposit the generalized section of the light-emitting diode after thicker golden layer among the embodiment 2;
Among the figure, 1 is Sapphire Substrate, and 2 is N type layer, and 3 is active layer, and 4 is P type layer, and 5 is transparency conducting layer, and 6 is silicon dioxide layer of protection, and 7 is photoresist, and 8 are the thin gold layer of evaporation, and 9 are the gold-plated layer of electronation.
Embodiment
As shown in Figure 1, the preparation method of the golden electrode for LED of present embodiment 1 comprises the steps:
(1) epitaxial growth N type layer 2, active layer 3, P type layer 1 on Sapphire Substrate 1; Etch N type layer 2 with the plasma etching board, and evaporation P type layer transparency conducting layer 5; In the mode of photoetching the photoresist 7 of the figure transfer of P, N electrode mask, as shown in Figure 2 to chip surface;
(2) on transparent electrode layer 5, N type layer 2 successively evaporation have the metal level of ohmic contact and the gold 8 that a layer thickness is 300 dusts, as shown in Figure 3; Remove unnecessary photoresist and metal by Lift-off, use acetone and isopropyl acetone ultrasonic oscillation clean wafers again, remove residual photoresist and organic substance;
(3) be 5g/L at chemical gilding fluid component gold sodium sulfide (in gold), the pH value is 7.5, and temperature is under 50 ℃ the condition, the gold 9 that to utilize reduction reaction be 10000 dusts at the golden laminar surface deposit thickness of evaporation, as shown in Figure 4;
(4) alternately wash clean wafer with the cold deionized water of heat; In the alloying furnace that feeds 10sccm nitrogen, temperature is under 225 ℃ the condition, the wafer that makes gold electrode to be carried out the heat treatment of 15min.
Present embodiment prepares the gained gold electrode, and its golden purity is 99.99%, and hardness is 60HV, firm welding.
As shown in Figure 1, the preparation method of the golden electrode for LED of present embodiment 2 comprises the steps:
(1) epitaxial growth N type layer 2, active layer 3, P type layer 1 on Sapphire Substrate 1; Etch N type layer 2 with the plasma etching board, and evaporation P type layer transparency conducting layer 5; In the mode of photoetching the photoresist 7 of the figure transfer of P, N electrode mask, as shown in Figure 2 to chip surface;
(2) on transparent electrode layer 5, N type layer 2 successively evaporation have the metal level of ohmic contact and the gold 8 that a layer thickness is 500 dusts, as shown in Figure 3; Remove unnecessary photoresist and metal by Lift-off, use acetone and isopropyl acetone ultrasonic oscillation clean wafers again, remove residual photoresist and organic substance;
(3) be 5g/L at chemical gilding fluid component gold sodium sulfide (in gold), the pH value is 7.8, and temperature is under 60 ℃ the condition, the gold 9 that to utilize reduction reaction be 15000 dusts at the golden laminar surface deposit thickness of evaporation, as shown in Figure 4;
(4) alternately wash clean wafer with the cold deionized water of heat; In the alloying furnace that feeds 10sccm nitrogen, temperature is under 250 ℃ the condition, the wafer that makes gold electrode to be carried out the heat treatment of 15min.
Present embodiment prepares the gained gold electrode, and its golden purity is 99.99%, and hardness is 60HV, firm welding.
As shown in Figure 1, the preparation method of the golden electrode for LED of present embodiment 3 comprises the steps:
(1) epitaxial growth N type layer 2, active layer 3, P type layer 4 on Sapphire Substrate 1; Etch N type layer 2 with the plasma etching board, and evaporation P type layer transparency conducting layer 5 and silicon dioxide layer of protection 6; The photoresist 7 of the image transfer of P, N electrode mask to chip surface, the silicon dioxide of electrode position is removed in etching, as shown in Figure 5 in the mode of photoetching;
(2) on transparent electrode layer 5, N type layer 2 successively evaporation have the metal level of ohmic contact and the gold 8 that a layer thickness is 400 dusts, as shown in Figure 6; Remove unnecessary photoresist and metal by Lift-off, use acetone and isopropyl acetone ultrasonic oscillation clean wafers again, remove residual photoresist and organic substance;
(3) be 5g/L at chemical gilding fluid component gold sodium sulfide (in gold), the pH value is 7.5, and temperature is under 55 ℃ the condition, the gold 9 that to utilize reduction reaction be 10000 dusts at the golden laminar surface deposit thickness of evaporation, as shown in Figure 7,
(4) alternately wash clean wafer with the cold deionized water of heat; In the alloying furnace that feeds 10sccm nitrogen, temperature is under 225 ℃ the condition, the wafer that makes gold electrode to be carried out the heat treatment of 15min.
The gold electrode of present embodiment preparation, its golden purity is 99.99%, hardness is 60HV, firm welding.
As shown in Figure 1, the preparation method of the golden electrode for LED of present embodiment 4 comprises the steps:
(1) epitaxial growth N type layer 2, active layer 3, P type layer 4 on Sapphire Substrate 1; Etch N type layer 2 with the plasma etching board, and evaporation P type layer transparency conducting layer 5 and silicon dioxide layer of protection 6; The photoresist 7 of the image transfer of P, N electrode mask to chip surface, the silicon dioxide of electrode position is removed in etching, as shown in Figure 5 in the mode of photoetching;
(2) on transparent electrode layer 5, N type layer 2 successively evaporation have the metal level of ohmic contact and the gold 8 that a layer thickness is 600 dusts, as shown in Figure 6; Remove unnecessary photoresist and metal by Lift-off, use acetone and isopropyl acetone ultrasonic oscillation clean wafers again, remove residual photoresist and organic substance;
(3) be 5g/L at chemical gilding fluid component gold sodium sulfide (in gold), the pH value is 7.7, and temperature is under 65 ℃ the condition, the gold 9 that to utilize reduction reaction be 15000 dusts at the golden laminar surface deposit thickness of evaporation, as shown in Figure 7,
(4) alternately wash clean wafer with the cold deionized water of heat; In the alloying furnace that feeds 10sccm nitrogen, temperature is under 250 ℃ the condition, the wafer that makes gold electrode to be carried out the heat treatment of 15min.
The gold electrode of present embodiment preparation, its golden purity is 99.99%, hardness is 60HV, firm welding.
The chip of embodiment 2 and 4 prepared golden electrode for LED and the golden electrode for LED of the method preparation of adopting evaporation or sputter is carried out the forward comparison of voltage, reliability and tensile test, and the result is as shown in table 1.
The performance that the gold-plated method of table 1 electronation, vapour deposition method and sputtering method prepare golden electrode for LED compares
| Electrode is made | The LED size | Measuring current | Vf(V) | Reliability test | Tensile test |
| Evaporation | 12mil×12mil | 20mA | 3.26 | OK | 18N |
| Sputter | 12mil×12mil | 20mA | 3.21 | | 17N |
| Embodiment | |||||
| 2 | 12mil×12mil | 20mA | 3.23 | | 16N |
| Embodiment | |||||
| 4 | 12mil×12mil | 20mA | 3.24 | OK | 16N |
As shown in table 1, the golden electrode for LED that adopts the gold-plated legal system of electronation of the present invention to be equipped with, with the golden electrode for LED that adopts existing vapour deposition method of using always and sputtering method preparation, performances such as the forward voltage of its chip, reliability and electrode adhesion are consistent, yet golden electrode for LED cost of the present invention is cheaper, help reducing the cost of chip, increase the competitiveness of product in market.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (7)
1, a kind of preparation method of golden electrode for LED, it is characterized in that this method is metal level and the thin gold layer of one deck that first evaporation successively has ohmic contact, adopt the gold-plated method of electronation on the thin golden laminar surface of evaporation, to separate out the gold layer of desired thickness then, promptly finished the preparation of golden electrode for LED.
2, preparation method according to claim 1 is characterized in that the thickness of the thin gold layer of described evaporation is 300～600 dusts.
3, preparation method according to claim 1 is characterized in that the golden layer thickness that the gold-plated method of described electronation is separated out is 7000～15000 dusts.
4, preparation method according to claim 1 is characterized in that this preparation method specifically comprises the steps:
(1) evaporation transparency conducting layer on chip P type layer; Orient the figure of P, N type layer electrode with photoresist;
(2) metal level that first evaporation has ohmic contact on transparency conducting layer, N type layer; Evaporation one deck approaches the gold layer on this metal level again; Metal-stripping and clean wafer after evaporation is finished;
(3) adopt the gold-plated method of electronation on the thin golden laminar surface of evaporation, to separate out the gold of desired thickness;
(4) behind the clean wafer wafer that makes gold electrode is heat-treated the preparation of promptly finishing golden electrode for LED.
5, preparation method according to claim 4 is characterized in that the gold-plated method of electronation in the described step (3) is that sulphite is gold-plated, halide is gold-plated or thiosulfate is gold-plated.
6, preparation method according to claim 4, it is characterized in that in the described step (3) electronation gold-plated be 45～65 ℃ in temperature, pH value is to carry out under 7～8 the condition.
7, preparation method according to claim 4, it is characterized in that the method for in the described step (4) wafer being heat-treated is: at nitrogen flow 5～30sccm, under the condition that temperature is 200～350 ℃, the wafer that makes gold electrode is heat-treated, heat treatment period is 5～20min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102194542A CN101420009B (en) | 2008-11-27 | 2008-11-27 | Production process for golden electrode for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102194542A CN101420009B (en) | 2008-11-27 | 2008-11-27 | Production process for golden electrode for LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101420009A true CN101420009A (en) | 2009-04-29 |
| CN101420009B CN101420009B (en) | 2010-09-22 |
Family
ID=40630705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102194542A Expired - Fee Related CN101420009B (en) | 2008-11-27 | 2008-11-27 | Production process for golden electrode for LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101420009B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446778A (en) * | 2010-10-08 | 2012-05-09 | 北大方正集团有限公司 | Method for improving wire bonding performance |
-
2008
- 2008-11-27 CN CN2008102194542A patent/CN101420009B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446778A (en) * | 2010-10-08 | 2012-05-09 | 北大方正集团有限公司 | Method for improving wire bonding performance |
| CN102446778B (en) * | 2010-10-08 | 2015-08-26 | 北大方正集团有限公司 | Improve the method for wire bonding performance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101420009B (en) | 2010-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100541843C (en) | A kind of GaN base LED P-node transparent conducting film and preparation method thereof | |
| WO2005040459B1 (en) | Electroplating compositions and methods for electroplating | |
| CN104934330A (en) | Film transistor and preparation method thereof, array substrate and display panel | |
| JP5854726B2 (en) | Method of electroplating silver strike on nickel | |
| CN107910405B (en) | A kind of production method of light-emitting diode chip for backlight unit | |
| TW200502437A (en) | Solution for etching copper surfaces and method of depositing metal on copper surfaces | |
| CN104167496B (en) | Inversion type top emitting device and preparation method thereof | |
| TW201038767A (en) | An electroless gold plating solution for forming a gold microstructure, a method for forming the gold microstructure using this plating soltion, and a gold microstructure formed by this method | |
| JP2019513280A (en) | Flexible substrate peeling method | |
| TW200723536A (en) | Method for manufacturing conductive copper lines on panel for display device | |
| CN102108533B (en) | Multi-layer electroplating process for making coins by using cyanide-free plating copper-tin alloy layer as surface layer | |
| CN101420009B (en) | Production process for golden electrode for LED | |
| CN101887938A (en) | LED chip and manufacturing method thereof | |
| AU2002358303A1 (en) | Material deposition from a liquefied gas solution | |
| TW201722880A (en) | Method for producing glass plate having film | |
| CN104064647A (en) | Novel LED chip and manufacturing method thereof | |
| CN101834240A (en) | Light-emitting diode with high-reflectivity contact electrode and manufacturing method thereof | |
| CN104701343B (en) | Organic EL display device and its manufacturing method | |
| TWI267135B (en) | Polishing method and polishing device, and manufacturing method for semiconductor device | |
| CN103943738B (en) | The preparation method of the light emitting diode of suppression electrode light absorbs | |
| CN105321826A (en) | Method of manufacturing semiconductor device and semiconductor device | |
| WO2005031035A3 (en) | Method for producing thin semiconductor films by deposition from solution | |
| JP6616637B2 (en) | Method for forming conductive film on transparent conductive film | |
| CN102709156A (en) | Wet etching method for ZnO-based transparent conductive film | |
| CN102664225A (en) | Light-emitting diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: INVENLUX OPTOELECTRONICS (CHINA) CO., LTD. Free format text: FORMER OWNER: PODIUM PHOTONICS (GUANGZHOU) LTD. Effective date: 20110909 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 510530 GUANGZHOU, GUANGDONG PROVINCE TO: 314300 JIAXING, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110909 Address after: 314300 Zhejiang bridge in Haiyan County province area highway 01 north, east of B7 Road (Zhejiang Bearing Co. Ltd. KGI 2 buildings 201 rooms) Patentee after: InvenLux Photoelectronics (China) Co., Ltd. Address before: 510530, No. 16, Gong Gong Road, Eastern District, Guangzhou economic and Technological Development Zone, Guangdong Patentee before: Podium Photonics (Guangzhou) Ltd. |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Production process for golden electrode for LED Effective date of registration: 20130108 Granted publication date: 20100922 Pledgee: Pudong Development Bank of Shanghai, Limited by Share Ltd, Jiaxing branch Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000017 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20130423 Granted publication date: 20100922 |
|
| RINS | Preservation of patent right or utility model and its discharge | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20130716 Granted publication date: 20100922 |
|
| RINS | Preservation of patent right or utility model and its discharge | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20130702 Granted publication date: 20100922 Pledgee: Pudong Development Bank of Shanghai, Limited by Share Ltd, Jiaxing branch Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000017 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Production process for golden electrode for LED Effective date of registration: 20130822 Granted publication date: 20100922 Pledgee: Haiyan Hangzhou Bay Bridge New Area Development Co., Ltd. Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000603 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20150813 Granted publication date: 20100922 Pledgee: Haiyan Hangzhou Bay Bridge New Area Development Co., Ltd. Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000603 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150929 Address after: 314300, Jiaxing Province, Haiyan County, Zhejiang Economic Development Zone, Hangzhou Bay Bridge, New District, 01 provincial road, B7 Road East Patentee after: Zhejiang Invenlux Technology Co.,Ltd. Address before: 314300 Zhejiang bridge in Haiyan County province area highway 01 north, east of B7 Road (Zhejiang Bearing Co. Ltd. KGI 2 buildings 201 rooms) Patentee before: InvenLux Photoelectronics (China) Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100922 Termination date: 20201127 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |