CN101403109A - Radio frequency electrode discharging apparatus - Google Patents
Radio frequency electrode discharging apparatus Download PDFInfo
- Publication number
- CN101403109A CN101403109A CNA2008100426649A CN200810042664A CN101403109A CN 101403109 A CN101403109 A CN 101403109A CN A2008100426649 A CNA2008100426649 A CN A2008100426649A CN 200810042664 A CN200810042664 A CN 200810042664A CN 101403109 A CN101403109 A CN 101403109A
- Authority
- CN
- China
- Prior art keywords
- frequency electrode
- radio frequency
- plate
- otter board
- discharging apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a radiofrequency electrode discharge device comprising a plate radiofrequency electrode, a gas distribution plate and a coating substrate which are arranged from top to bottom, and the device also comprises a metal meshed board arranged closely to the lower part of the gas distribution plate. By adding the metal meshed board, the radiofrequency electrode discharge device greatly reduces the direct bombarding of decomposed high-energy ions and active groups to deposition coatings, improves the decomposition rate of reactive gases, accelerates the deposition rate of films and improves the quality of films.
Description
Technical field
The present invention relates to film preparing technology, relate in particular to a kind of radio frequency plate electrode electric discharge device that is used for film preparation.
Background technology
In the amorphous silicon thin-film solar cell production technique of prior art, to pass through the mode of plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition is called for short PECVD) usually and carry out film preparation.As shown in Figure 1, 2, in this pecvd process, adopt the gas distribution mode of plate electrode and pore type structure more.As shown in Figure 1, the structural representation of existing PECVD film preparation device comprises dull and stereotyped radio frequency negative electrode 1, air distribution plate 3, coated basal plate 8.As shown in Figure 2, wherein uniformly dispersing a lot of qi-emitting holes 4 on the air distribution plate 3, the reactant gases 2 that feeds when film preparation can be broken down into ion and active group etc. under effect of electric field, pass the qi-emitting hole 4 on the air distribution plate 3 respectively and be deposited on the coated basal plate 8, the part high energy particle directly causes strong bombardment to the rete on the coated basal plate 87 under effect of electric field simultaneously, thereby cause the quality of sedimentary film to sustain damage, after adding bias voltage between radio frequency negative electrode and coated basal plate, this damage meeting is bigger; If but assurance rete 7 quality and reduce electric field action, the rate of decomposition of reactant gases will reduce, depositing of thin film speed also can slow down thereupon.
In summary, the shortcoming of prior art is:
1. because the strong bombardment that energetic ion that decomposites and active group directly cause depositional coating sustains damage the quality of film.
2. reduce electric field action if will guarantee film quality, then the rate of decomposition of reactant gases is low, and depositing of thin film speed is slow.
Summary of the invention
The objective of the invention is to propose a kind of radio frequency electrode discharging apparatus design, by below near air distribution plate, metal otter board being set, the bombardment damage that directly depositional coating is caused with the energetic ion that reduces to be decomposed out and active group, improve the rate of decomposition of reactant gases simultaneously, improve depositing of thin film speed.
The object of the present invention is achieved like this, comprises the dull and stereotyped radio-frequency electrode, air distribution plate and the coated basal plate that set gradually from top to bottom, also comprises web plate, is arranged at next-door neighbour's air distribution plate below.
Fix by ceramics pole between described web plate and the air distribution plate.
Described web plate is a metallic substance, the size of metal otter board and dull and stereotyped radio-frequency electrode coupling.
Be provided with bias voltage between described metal otter board and the dull and stereotyped radio-frequency electrode, active ion and electronics can accelerated motions under the effect of bias voltage, make that the rate of decomposition by reactant gases between metal otter board and the air distribution plate improves.
Preferably, the spacing between described metal otter board and the air distribution plate is 2 to 30mm.Highfield between metal otter board and the air distribution plate is very strong to the capacity of decomposition of reactant gases, compares with the conventional radio frequency electrode device, and the rate of decomposition of reactant gases improves, and depositing of thin film speed speeds.
Preferably, the spacing between described metal otter board and the coated basal plate is 2 to 100mm.Electric field between metal otter board and the coated basal plate is less, with traditional directly between radio-frequency electrode and coated basal plate the situation of added electric field compare, the momentum and the kinetic energy that arrive at the resolvent of coated basal plate descend, and the damage of sedimentary film is reduced.
Preferably, the qi-emitting hole size on the general air distribution plate is 0.5 ~ 5mm, and metal mesh opening is 2～5 times of qi-emitting hole size.
Preferably, metal mesh opening can not be excessive, and the area in hole is crossed conference and caused web plate self support strength not enough, and the too small meeting of the area in hole causes can not being arrived substrate surface by web plate smoothly by the active particle of plasma decomposes.
Preferably, being shaped as of metal mesh opening is square, circular, trilateral, Polygons can, can freely design.
The present invention makes it compared with prior art owing to adopted above technical scheme, has the following advantages and positively effect:
1. reduce the bombardment that the energetic ion that decomposites and active group directly cause depositional coating greatly, improved the quality of film.
2. can under the prerequisite that guarantees film quality, strengthen the rate of decomposition of reactant gases, accelerate depositing of thin film speed.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.
In the accompanying drawings:
Fig. 1 is the structural representation of the radio frequency electrode discharging apparatus of prior art.
Fig. 2 is the vertical view of the air distribution plate of prior art.
Fig. 3 is the structural representation of radio frequency electrode discharging apparatus of the present invention.
Fig. 4 is the vertical view of metal otter board of the present invention.
Drawing reference numeral:
[1] dull and stereotyped radio frequency negative electrode [2] reactant gases [3] air distribution plate [4] qi-emitting hole
[5] ceramics pole [6] web plate [7] rete [8] coated basal plate
Embodiment
Below in conjunction with accompanying drawing 3,4, specifically introduce a kind of preferable real example of the present invention:
As shown in Figure 3, the present invention includes a dull and stereotyped radio-frequency electrode 1, an air distribution plate 3, a metal otter board 6 and a coated basal plate 8 that be arranged in parallel successively from top to bottom.Dull and stereotyped radio-frequency electrode 1 is connected with a side of air distribution plate 3.Uniform distribution qi-emitting hole 4 on the air distribution plate 3 becomes arranged.Metal otter board 6 is arranged at next-door neighbour's air distribution plate 3 belows, and fixing with air distribution plate 3 by ceramics pole 5.Described web plate is a metallic substance, and the size of the size of metal otter board 6 and dull and stereotyped radio-frequency electrode 1 is complementary.Spacing between metal otter board 6 and the air distribution plate 3 is 2 to 30mm; Spacing between metal otter board 6 and the coated basal plate 8 is 2 to 100mm.
As shown in Figure 4, uniform distribution mesh on the metal otter board 6, mesh becomes arranged, nets the shape of each hole parallelogram, and is also circular, trilateral, Polygons etc.
Because being placed in the closed environment usually, dull and stereotyped radio-frequency electrode 1, air distribution plate 3 and coated basal plate 8 work, when feeding reactant gases 2, reactant gases 2 enters between air distribution plate 3 and the coated basal plate 8 by qi-emitting hole 4, if open the power supply of radio-frequency electrode this moment, and metal otter board 6 ground connection, reaction gas cognition between dull and stereotyped radio-frequency electrode 1 and metal otter board 6 is fully decomposed, and these resolvents see through metal otter board 6 and move to coated basal plate 8 surface deposition films.
Between radio-frequency electrode 1 and metal otter board 6, add a bias voltage, make that the gas 2 by qi-emitting hole 4 can produce more intensive discharge between air distribution plate 3 and metal otter board 6 in the film preparation process, ion meeting accelerated motion under the effect of bias voltage, bombardment to reactant gases strengthens, and has improved the rate of decomposition of reactant gases.
After the radio frequency plate electrode 1 of prior art adds a bias voltage, the ion that is accelerated will directly be faced depositional coating 7, and the bombardment damage that depositional coating 7 is caused increases.And the present invention is after adding metal otter board 6, can be the acceleration of ions region limits in position away from rete 7, effectively reduce the bombardment damage that the energetic ion that is decomposed out and active group directly cause depositional coating 7.
In sum, the present invention is by setting up metal otter board, reduces the bombardment that the energetic ion that decomposites and active group directly cause depositional coating greatly, strengthens the rate of decomposition of reactant gases, accelerates depositing of thin film speed, improved the quality of film.
Should be noted that at last: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; Although with reference to preferred embodiment the present invention is had been described in detail, those of ordinary skill in the field are to be understood that: still can make amendment or the part technical characterictic is equal to replacement the specific embodiment of the present invention; And not breaking away from the spirit of technical solution of the present invention, it all should be encompassed in the middle of the technical scheme scope that the present invention asks for protection.
Claims (7)
1, a kind of radio frequency electrode discharging apparatus comprises the dull and stereotyped radio-frequency electrode (1), an air distribution plate (3) and the coated basal plate (8) that set gradually from top to bottom, it is characterized in that, also comprises a web plate (6), is arranged at next-door neighbour's air distribution plate (3) below.
2, radio frequency electrode discharging apparatus as claimed in claim 1 is characterized in that, and is fixing by ceramics pole (5) between described web plate (6) and the air distribution plate (3).
3, radio frequency electrode discharging apparatus as claimed in claim 1 or 2 is characterized in that, described web plate (6) is a metallic substance, the size of metal otter board (6) and dull and stereotyped radio-frequency electrode (1) coupling.
4, radio frequency electrode discharging apparatus as claimed in claim 3 is characterized in that, the spacing between described metal otter board (6) and the air distribution plate (3) is 2 to 30mm.
5, radio frequency electrode discharging apparatus as claimed in claim 4 is characterized in that, the spacing between described metal otter board (6) and the coated basal plate (8) is 2 to 100mm.
6, radio frequency electrode discharging apparatus as claimed in claim 5 is characterized in that, is provided with a bias voltage between described metal otter board (6) and the dull and stereotyped radio-frequency electrode (1).
7, radio frequency electrode discharging apparatus as claimed in claim 6 is characterized in that, the mesh on the described metal otter board (6) is 2～5 times of qi-emitting hole (4) size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100426649A CN101403109B (en) | 2008-09-09 | 2008-09-09 | Radio frequency electrode discharging apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100426649A CN101403109B (en) | 2008-09-09 | 2008-09-09 | Radio frequency electrode discharging apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101403109A true CN101403109A (en) | 2009-04-08 |
| CN101403109B CN101403109B (en) | 2010-12-22 |
Family
ID=40537265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100426649A Expired - Fee Related CN101403109B (en) | 2008-09-09 | 2008-09-09 | Radio frequency electrode discharging apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101403109B (en) |
-
2008
- 2008-09-09 CN CN2008100426649A patent/CN101403109B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101403109B (en) | 2010-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107369813B (en) | Metal lithium electrode and preparation method thereof, lithium metal second electrode cathode, battery | |
| TWI788315B (en) | Plasma spraying device and battery electrode manufacturing method | |
| CN100567567C (en) | Can obtain the big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode of uniform electric field | |
| WO2009142924A8 (en) | Intercalation electrode based on ordered graphene planes | |
| CN102362337A (en) | Plasma processing apparatus and method of producing amorphous silicon thin film using same | |
| JP6194320B2 (en) | Battery electrode processing method | |
| TW201447029A (en) | Plasma cvd device and plasma cvd method | |
| CN101402095A (en) | Plasma surface cleaning apparatus | |
| CN101981729A (en) | Electrode for lithium secondary battery and method of manufacturing same | |
| JP2009158416A (en) | Manufacturing method for solid electrolyte thin film, parallel flat-plate type magnetron sputtering device, and manufacturing method for thin-film solid lithium ion secondary battery | |
| CN107887571A (en) | A kind of lithium ion battery composite anode pole piece and preparation method thereof, lithium ion battery | |
| CN101187014A (en) | Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field | |
| CN113215552B (en) | Method for preparing coating powder by adopting plasma vapor deposition process | |
| CN202558926U (en) | Equipment capable of realizing high-speed deposited diamond-like film on surface of three-dimensional workpiece | |
| CN101403109B (en) | Radio frequency electrode discharging apparatus | |
| CN202595259U (en) | Magnetron sputtering equipment | |
| CN113215533B (en) | Method for preparing coating powder by adopting plasma vapor deposition process | |
| CN101235488A (en) | Technique for forming thin film on substrate equipped outside radio frequency plasma | |
| CN109267037A (en) | Atmospheric plasma enhances chemical vapor deposition method and the equipment using this method | |
| CN202786417U (en) | Vertical type chemical vapor deposition device | |
| KR20110040565A (en) | Sulfur positive electrodes and method for preparing the same | |
| CN202465863U (en) | Device for spraying electrode and synchronously depositing thin film in manufacturing of flexible thin film photovoltaic cell | |
| EP3270406B1 (en) | Plasma-enhanced chemical vapor deposition apparatus and method of forming lithium-based film by using the same | |
| US20040178057A1 (en) | Method of manufacturing electrode plate for battery | |
| CN102212779A (en) | Magnetron sputtering coating device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101222 Termination date: 20140909 |
|
| EXPY | Termination of patent right or utility model |