CN101399306A - InP-InAsP nanowire LED and preparation thereof - Google Patents
InP-InAsP nanowire LED and preparation thereof Download PDFInfo
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- CN101399306A CN101399306A CNA2008101220003A CN200810122000A CN101399306A CN 101399306 A CN101399306 A CN 101399306A CN A2008101220003 A CNA2008101220003 A CN A2008101220003A CN 200810122000 A CN200810122000 A CN 200810122000A CN 101399306 A CN101399306 A CN 101399306A
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Abstract
An InP-InAsP nanowire LED and a preparation method thereof belong to the technology field of light-emitting diodes. The InP-InAsP nanowire LED comprises a substrate, a p-InP nanowire layer, an InAsxP1-x nanowire array and an n-InP nanowire layer are sequentially arranged on one surface of the substrate from bottom to top by deposition, a first electrode is arranged on the other surface of the substrate by deposition, a second electrode is arranged on the n-InP nanowire layer by deposition, the InAsxP1-x nanowire array is an active layer of the LED, wherein, the range of the x value is 0-0.6. The InP-InAsP nanowire LED takes the InAsP nanowire array as the active layer, thereby being capable of obtaining the higher light emitting efficiency; emergent light with the different wave bands can be obtained through the control and the regulation of the size, and other factors of the InAsP nanowire array according to the needs of the different occasions or the different customers, thereby being capable of preparing light-emitting devices which emit red light, infrared light, mid-infrared light, and the like.
Description
Technical field
The invention belongs to the technical field of light-emitting diode, especially the technical field of nano-wire LED is specifically related to a kind of InP-InAsP nanowire LED and preparation method thereof.
Background technology
Along with development of material technology, directly in various matrix, as: growth direct band gap nano wire becomes possibility on silicon, the gallium nitride.Use and the quantum optices field in the solid luminescence illumination, owing to have higher luminous efficiency, nano-wire array is considered to a kind of desirable luminescent material, and in addition, because quantum confinement effect, nano wire has than the better luminescent properties of body material.Therefore,, luminous efficiency can be improved greatly, and according to quantum constraint effect,, the emission light of different-waveband can be obtained by width of nano wire etc. is regulated with the active layer of nano wire as light-emitting diode.And the luminous efficiency of traditional at present ruddiness that uses, infrared LED is all lower.
Summary of the invention
At problems of the prior art, the object of the present invention is to provide the technical scheme of a kind of InP-InAsP nanowire LED and preparation method thereof, adopt nano wire as active layer, the luminous efficiency of LED is improved greatly.
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that comprising substrate, and the one side of substrate deposits successively from bottom to top p-InP nano wire layer, InAs are set
xP
1-xNano-wire array and n-InP nano wire layer, the another side deposition of substrate is provided with first electrode, and deposition is provided with second electrode, InAs on the n-InP nano wire layer
xP
1-xNano-wire array is the active layer of LED, and wherein the scope of x value is 0～0.6.
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that substrate is silicon, gallium nitride, zinc oxide or sapphire.
Described a kind of InP-InAsP nanowire LED and preparation method thereof, the nanowire diameter that it is characterized in that described p-InP nano wire layer and n-InP nano wire layer is 50～200nm, InAs
xP
1-xThe nanowire diameter of nano-wire array is 20～50nm.
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that the method for preparing the InP-InAsP nanowire LED comprises following processing step:
1) adopt the metal organic vapor method to deposit p-InP nano wire layer, InAs from bottom to top successively in the one side of substrate
xP
1-xNano-wire array and n-InP nano wire layer;
2) regulate growth temperature to 420～450 ℃, use hydrogen as carrier gas, with PH
3Gas is as the main P doped source that is subjected to of InP;
3) behind the temperature stabilization, adding molar fraction in reactor is 2.0 * 10
-5～2.5 * 10
-5Trimethyl indium, and to use molar fraction simultaneously be 1.7 * 10
-6H
2S gas realizes that the n type mixes, and after the nanowire diameter of n-InP nano wire layer reached 50～200nm, adding molar fraction was 3.2 * 10
-4～3.7 * 10
-4Diethyl zinc carry out the p type and mix, reach 50～200nm until the nanowire diameter of p-InP nano wire layer;
4) when the p-n junction of InP begins to take shape, stop hydrogen and H
2The air feed of S begins to import gas AsH simultaneously
3Carry out InAs
xP
1-xThe growth of nano wire, growth of vertical are in substrate and have the InP and the InAs in gap each other
xP
1-xNano wire continues at PH behind the growth ending
3Environment in be cooled to room temperature;
5) after growth finishes, adopt spin coating proceeding that organic photoresist is filled in the gap between the nano wire, adopt etching method to remove the oxide layer of nanowire surface;
6) adopt sputtering method to deposit second electrode, deposit first electrode at the another side of substrate at n-InP nano wire layer upper surface;
7) exposure washes photoresist at last.
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that production method step 2) described in use hydrogen as carrier gas, the flow of hydrogen is 6 liters/minute, air pressure is 50mbar, PH
3The molar fraction of gas is 8 * 10
-3～8.5 * 10
-3
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that the input gas AsH described in the production method step 4)
3Carry out InAs
xP
1-xThe growth of nano wire, wherein InAs
xP
1-xThe content of As is by regulating AsH in the nano wire
3With PH
3Ratio control.
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that InAs
xP
1-xLED glowed when the nanowire diameter of nano-wire array was 20～30nm, and LED sent out infrared light when diameter was 30～40nm, and LED sent out mid-infrared light when diameter was 40～50nm.
Described a kind of InP-InAsP nanowire LED and preparation method thereof is characterized in that first electrode is thick Zn alloy of 15nm thick Ti alloy, 30nm or the thick Au alloy of 90nm, and second electrode is thick Ti alloy of 100nm or the thick Al alloy of 15nm.
The present invention as active layer, can obtain higher photoluminescence efficiency with the InAsP nano-wire array; According to different occasions or different clients' needs, by size of InAsP nano-wire array etc. is carried out regulating and controlling, can obtain the emergent light of different-waveband, can prepare glow, the luminescent device of multiple color such as infrared light and mid-infrared light.
Description of drawings
Fig. 1 is the structural representation of InP-InAsP nanowire LED of the present invention;
Fig. 2 is the luminescent spectrum figure of InP-InAsP nanowire LED of the present invention under different bias voltages;
Fig. 3 is the luminescent spectrum figure of InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array is 20 nanometers, and bias voltage is 2.2 volts;
Fig. 4 is the luminescent spectrum figure of InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array is 30 nanometers, and bias voltage is 2.2 volts;
Fig. 5 is the luminescent spectrum figure of InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 40 nanometers, and bias voltage is 2.0 volts;
Fig. 6 is the luminescent spectrum figure of InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 50 nanometers, and bias voltage is 2.0 volts.
Embodiment
Below in conjunction with accompanying drawing the utility model is described further.
As shown in Figure 1, a kind of InP-InAsP nanowire LED and preparation method thereof, the one side of substrate 2 from bottom to top successively deposition p-InP nano wire layer 3, InAs are set
xP
1-xNano-wire array 4 and n-InP nano wire layer 5, the nanowire diameter of p-InP nano wire layer 3 and n-InP nano wire layer 5 is 50～200nm, InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 20～50nm, InAs
xP
1-xNano-wire array 4 is the active layer of LED, and wherein the scope of x value is 0～0.6.The another side deposition of substrate 2 is provided with first electrode 1, and deposition is provided with second electrode 6 on the n-InP nano wire layer 5, and substrate 2 is silicon, gallium nitride, zinc oxide or sapphire.First electrode 1 is thick Zn alloy of thick Ti alloy of 15nm or 30nm or the thick Au alloy of 90nm, and first electrode 1 is a p type electrode, and second electrode 6 is thick Ti alloy of 100nm or the thick Al alloy of 15nm, and second electrode 6 is a n type electrode.
Above-mentioned InP-InAsP nanowire LED preparation method is as follows:
At first adopt the metal organic vapor method to deposit p-InP nano wire layer 3, InAs from bottom to top successively in the one side of substrate 2
xP
1-xNano-wire array 4 and n-InP nano wire layer 5, deposition puts it in the reactor after finishing, and regulates growth temperature to 420～450 ℃, uses hydrogen as carrier gas, with PH
3Gas is as the main P doped source that is subjected to of InP, and the flow of hydrogen is 6 liters/minute, and air pressure is 50mbar, PH
3The molar fraction of gas is 8 * 10
-3～8.5 * 10
-3After treating temperature stabilization, adding molar fraction in reactor is 2.0 * 10
-5～2.5 * 10
-5Trimethyl indium, and to use molar fraction simultaneously be 1.7 * 10
-6H
2S gas realizes that the n type mixes, and after the nanowire diameter of n-InP nano wire layer 5 reached 50～200nm, adding molar fraction was 3.2 * 10
-4～3.7 * 10
-4Diethyl zinc carry out the p type and mix, reach 50～200nm until the nanowire diameter of p-InP nano wire layer 3.When the p-n junction of InP begins to take shape, stop hydrogen and H
2The air feed of S begins to import gas AsH simultaneously
3Carry out InAs
xP
1-xThe growth of nano wire, growth of vertical is in substrate 2 and have the InP and the InAs in gap each other
xP
1-xNano wire, wherein InAs
xP
1-xThe content of As is by regulating AsH in the nano wire
3With PH
3Ratio control, the scope of x value is 0～0.6.Continue at PH behind the growth ending
3Environment in be cooled to room temperature.After growth finishes, adopt spin coating proceeding that organic photoresist is filled in the gap between the nano wire, adopt etching method to remove the oxide layer of nanowire surface.Adopt sputtering method to deposit second electrode 6 then at n-InP nano wire layer 5 upper surfaces, another side at substrate 2 deposits first electrode 1, first electrode 1 is thick Zn alloy of thick Ti alloy of 15nm or 30nm or the thick Au alloy of 90nm, first electrode 1 is a p type electrode, second electrode 6 is thick Ti alloy of 100nm or the thick Al alloy of 15nm, and second electrode 6 is a n type electrode.Exposure at last washes photoresist.
After finishing above-mentioned technology, can obtain the InP-InAsP nanowire LED, welding lead frame on first electrode 1, second electrode 6 can obtain LED with its encapsulation then.According to different occasions or different clients' needs, by size of InAsP nano-wire array etc. is carried out regulating and controlling, can obtain the emergent light of different-waveband, can prepare glow, the luminescent device of multiple color such as infrared light and mid-infrared light.InAs
xP
1-xLED glowed when the nanowire diameter of nano-wire array 4 was 20～30nm, and LED sent out infrared light when diameter was 30～40nm, and LED sent out mid-infrared light when diameter was 40～50nm.
Figure 2 shows that the luminescent spectrum figure of InP-InAsP nanowire LED of the present invention under different bias voltages.As can be seen from the figure, when bias voltage was 2.2V, the luminous efficiency of InP-InAsP nanowire LED was the highest, can reach more than 95%, and the luminescence center wavelength corresponds to 765nm, and when bias voltage during less than 1.8V, luminous efficiency reduces.
Figure 3 shows that InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 20 nanometers, when bias voltage is 2.2 volts, and the luminescent spectrum figure of this LED, abscissa is represented emission wavelength, and its center emission wavelength is 765nm, and what ordinate was represented is normalized luminous intensity.
Figure 4 shows that InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 30 nanometers, when bias voltage is 2.2 volts, and the luminescent spectrum figure of this LED, abscissa is represented emission wavelength, and its center emission wavelength is 993nm, and what ordinate was represented is normalized luminous intensity.
Figure 5 shows that InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 40 nanometers, when bias voltage is 2.0 volts, and the luminescent spectrum figure of this LED, abscissa is represented emission wavelength, and its center emission wavelength is 1033nm, and what ordinate was represented is normalized luminous intensity.
Figure 6 shows that InP-InAsP nanowire LED of the present invention, wherein InAs
xP
1-xThe nanowire diameter of nano-wire array 4 is 50 nanometers, when bias voltage is 2.0 volts, and the luminescent spectrum figure of this LED, abscissa is represented emission wavelength, and its center emission wavelength is 1500nm, and what ordinate was represented is normalized luminous intensity.
Claims (8)
1. InP-InAsP nanowire LED and preparation method thereof is characterized in that comprising substrate (2), and the one side of substrate (2) deposits successively from bottom to top p-InP nano wire layer (3), InAs are set
xP
1-xNano-wire array (4) and n-InP nano wire layer (5), the another side deposition of substrate (2) is provided with first electrode (1), and n-InP nano wire layer (5) is gone up deposition second electrode (6), InAs is set
xP
1-xNano-wire array (4) is the active layer of LED, and wherein the scope of x value is 0～0.6.
2. a kind of InP-InAsP nanowire LED as claimed in claim 1 and preparation method thereof is characterized in that substrate (2) is silicon, gallium nitride, zinc oxide or sapphire.
3. a kind of InP-InAsP nanowire LED as claimed in claim 1 and preparation method thereof is characterized in that the nanowire diameter of described p-InP nano wire layer (3) and n-InP nano wire layer (5) is 50～200nm, InAs
xP
1-xThe nanowire diameter of nano-wire array (4) is 20～50nm.
4. a kind of InP-InAsP nanowire LED as claimed in claim 1 and preparation method thereof is characterized in that the method for producing the InP-InAsP nanowire LED comprises following processing step:
1) adopt the metal organic vapor method to deposit p-InP nano wire layer (3), InAs from bottom to top successively in the one side of substrate (2)
xP
1-xNano-wire array (4) and n-InP nano wire layer (5);
2) regulate growth temperature to 420～450 ℃, use hydrogen as carrier gas, with PH
3Gas is as the main P doped source that is subjected to of InP;
3) behind the temperature stabilization, adding molar fraction in reactor is 2.0 * 10
-5～2.5 * 10
-5Trimethyl indium, and to use molar fraction simultaneously be 1.7 * 10
-6H
2S gas realizes that the n type mixes, and after the nanowire diameter of n-InP nano wire layer (5) reached 50～200nm, adding molar fraction was 3.2 * 10
-4～3.7 * 10
-4Diethyl zinc carry out the p type and mix, reach 50～200nm until the nanowire diameter of p-InP nano wire layer (3);
4) when the p-n junction of InP begins to take shape, stop hydrogen and H
2The air feed of S begins to import gas AsH3 simultaneously and carries out InAs
xP
1-xThe growth of nano wire, growth of vertical is in substrate (2) and have the InP and the InAs in gap each other
xP
1-xNano wire continues behind the growth ending to be cooled to room temperature in the environment of PH3;
5) after growth finishes, adopt spin coating proceeding that organic photoresist is filled in the gap between the nano wire, adopt etching method to remove the oxide layer of nanowire surface;
6) adopt sputtering method to deposit second electrode (6), deposit first electrode (1) at the another side of substrate (2) at n-InP nano wire layer (5) upper surface;
7) exposure washes photoresist at last.
5. a kind of InP-InAsP nanowire LED as claimed in claim 4 and preparation method thereof is characterized in that production method step 2) described in use hydrogen as carrier gas, the flow of hydrogen is 6 liters/minute, air pressure is 50mbar, PH
3The molar fraction of gas is 8 * 10
-3～8.5 * 10
-3
6. a kind of InP-InAsP nanowire LED as claimed in claim 4 and preparation method thereof is characterized in that the input gas AsH described in the production method step 4)
3Carry out InAs
xP
1-xThe growth of nano wire, wherein InAs
xP
1-xThe content of As is by regulating AsH in the nano wire
3With PH
3Ratio control.
7. as claim 1 or 3 described a kind of InP-InAsP nanowire LEDs and preparation method thereof, it is characterized in that InAs
xP
1-xLED glowed when the nanowire diameter of nano-wire array (4) was 20～30nm, and LED sent out infrared light when diameter was 30～40nm, and LED sent out mid-infrared light when diameter was 40～50nm.
8. as claim 1 or 4 described a kind of InP-InAsP nanowire LEDs and preparation method thereof, it is characterized in that first electrode (1) is thick thick Zn alloy or the thick Au alloy of 90nm of Ti alloy, 30nm of 15nm, second electrode (6) is thick Ti alloy of 100nm or the thick Al alloy of 15nm.
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|---|---|---|---|
| CN2008101220003A CN101399306B (en) | 2008-11-06 | 2008-11-06 | InP-InAsP nanowire LED and preparation thereof |
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| CN2008101220003A CN101399306B (en) | 2008-11-06 | 2008-11-06 | InP-InAsP nanowire LED and preparation thereof |
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| CN101399306B CN101399306B (en) | 2010-11-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201516A (en) * | 2011-04-22 | 2011-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED (light emitting diode) with InGaN nanopillar array active region and fabrication method thereof |
| CN103737010A (en) * | 2014-01-27 | 2014-04-23 | 湖南大学 | InAsxP1-x alloy nanowires and preparation method thereof |
-
2008
- 2008-11-06 CN CN2008101220003A patent/CN101399306B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201516A (en) * | 2011-04-22 | 2011-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED (light emitting diode) with InGaN nanopillar array active region and fabrication method thereof |
| CN102201516B (en) * | 2011-04-22 | 2013-11-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED (light emitting diode) with InGaN nanopillar array active region and fabrication method thereof |
| CN103737010A (en) * | 2014-01-27 | 2014-04-23 | 湖南大学 | InAsxP1-x alloy nanowires and preparation method thereof |
| CN103737010B (en) * | 2014-01-27 | 2016-01-20 | 湖南大学 | A kind of InAs xp 1-xalloy nano-wire and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN101399306B (en) | 2010-11-24 |
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