CN101399015B - DC simulation power supply device - Google Patents
DC simulation power supply device Download PDFInfo
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- CN101399015B CN101399015B CN2007101225125A CN200710122512A CN101399015B CN 101399015 B CN101399015 B CN 101399015B CN 2007101225125 A CN2007101225125 A CN 2007101225125A CN 200710122512 A CN200710122512 A CN 200710122512A CN 101399015 B CN101399015 B CN 101399015B
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Abstract
The invention relates to a direct-current analog power supply device, comprising a direct-current analog power supply circuit and a control circuit. The direct-current analog power supply circuit is connected with working power supply and a source drive integrated circuit respectively and is used for receiving working voltage from the working power supply and outputting direct-current analog voltage to the source drive integrated circuit; the control circuit is connected with the direct-current analog power supply circuit and is used for causing the direct-current analog power supply circuit to output maximum direct-current analog voltage or typical direct-current analog voltage to the source drive integrated circuit according to the control signal input by an aging system. In the invention, the maximum direct-current analog voltage is output when an aging project of a TFT-LCD module manufacturing procedure is carried out, so as to improve the detection efficiency of defective drive integrated circuits in the aging project of the TFT-LCD module manufacturing procedure; except the above situation, the typical direct-current analog voltage is output on the other situations, thereby leading the TFT-LCD to work normally.
Description
Technical field
The present invention relates to a kind of supply unit of Thin Film Transistor-LCD, particularly a kind of DC simulation power supply device.
Background technology
Thin Film Transistor-LCD (TFT-LCD) manufacturing mainly comprises three important flow processs: array processing procedure, the upright processing procedure of group and module processing procedure, the final stage of module processing procedure need be carried out burn-in test with the upright module of finishing of group, under "on" position, test, to filter out the bad product of quality.
Typical DC simulation voltage when the burn-in test of prior art adopts the TFT-LCD operate as normal usually is applied in the drive integrated circult of TFT-LCD module, to test its job stability.Though simulation real work situation so targetedly, the time is longer, and efficient is lower, has influenced the production rate of TFT-LCD to a certain extent.
Summary of the invention
The purpose of this invention is to provide a kind of DC simulation power supply device,, improve the bad detection efficiency of drive integrated circult in the aging engineering of module group procedure by producing two kinds of DC simulation power supplys.
To achieve these goals, the invention provides a kind of DC simulation power supply device, comprising:
The DC simulation power circuit is connected with the source drive integrated circult with working power respectively, is used for receiving operating voltage and exporting DC simulation voltage to described source drive integrated circult from described working power;
Control circuit, be connected with described DC simulation power circuit, be used for when the ageing system input control signal, making described DC simulation power circuit to export maximum DC simulation voltage, when ageing system does not have input control signal, make described DC simulation power circuit export typical DC simulation voltage to described source drive integrated circult to described source drive integrated circult.
Described control circuit comprises NPN transistor, first resistance, second resistance, the 3rd resistance and first electric capacity, and described DC simulation power circuit comprises dc conversion modules and peripheral circuit, wherein:
NPN transistor, base stage is connected with ageing system, is used to receive the control signal that ageing system sends; Emitter is by the 3rd resistance eutral grounding; Collector is connected with the feedback pin of described dc conversion modules;
First resistance, an end is connected with the current collection pin of described dc conversion modules by schottky diode, and the other end is connected with the feedback pin of described dc conversion modules;
Second resistance, an end is connected with the feedback pin of described dc conversion modules, and the other end is connected with the grounding leg of described dc conversion modules;
First electric capacity, an end is connected with schottky diode, other end ground connection.
On the technique scheme basis, described control signal is the DC voltage of 3.3V or 5V.
The invention provides a kind of DC simulation power supply device, by the control circuit that is connected with ageing system is set, control signal according to ageing system makes the DC simulation power circuit export two kinds of voltages at least---maximum DC simulation voltage and typical DC simulation voltage, promptly when the aging engineering of TFT-LCD module group procedure, export maximum DC simulation voltage, improve the bad detection efficiency of drive integrated circult in the aging engineering, the typical DC simulation voltage of output makes the TFT-LCD operate as normal under other situations in addition.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is the structural representation of DC simulation power supply device of the present invention;
Fig. 2 is the circuit diagram of DC simulation power supply device one embodiment of the present invention.
Description of reference numerals:
100-DC simulation power circuit; The 200-control circuit; The 10-working power;
20-source drive integrated circult; The 30-ageing system; The VDD-operating voltage;
AVDD-DC simulation voltage; AVDD
H/L-control signal; The Q-NPN transistor;
R1-first resistance; R2-second resistance; R3-the 3rd resistance;
C1-first electric capacity; The L1-inductance.
Embodiment
Fig. 1 is the structural representation of DC simulation power supply device of the present invention, DC simulation power supply device of the present invention comprises DC simulation power circuit 100 and control circuit 200, DC simulation power circuit 100 is connected between TFT-LCD working power 10 and the source drive integrated circult 20, TFT-LCD working power 10 is used to provide operating voltage VDD, DC simulation power circuit 100 is used to receive operating voltage VDD, to source drive integrated circult 20 output DC simulation voltage AVDD, control circuit 200 is connected with DC simulation power circuit 100, is used for the control signal AVDD according to ageing system 30 inputs
H/LMake DC simulation power circuit 100 to the maximum DC simulation voltage AVDD of source drive integrated circult 20 outputs
MAXOr typical DC simulation voltage AVDD
TYP
Among the existing TFT-LCD, the DC simulation power circuit is single, fixing typical DC simulation voltage AVDD to the source drive integrated circult
TYP, technique scheme of the present invention is by the control circuit that is connected with ageing system is set, according to the control signal AVDD of ageing system
H/LMake DC simulation power circuit output two kinds of voltages---maximum DC simulation voltage AVDD
MAXWith typical DC simulation voltage AVDD
TYP, promptly when the aging engineering of TFT-LCD module group procedure, export maximum DC simulation voltage AVDD
MAX, and be input in the drive integrated circult of source as driving voltage, make and give the IC peak load by TCP, improve the bad detection efficiency of drive integrated circult in the aging engineering of module group procedure, the typical DC simulation voltage AVDD of output under other situations in addition
TYP, make the TFT-LCD operate as normal.
Fig. 2 is the circuit diagram of DC simulation power supply device one embodiment of the present invention.As shown in Figure 2, control circuit comprises NPN transistor Q, first resistance R 1, second resistance R 2, the 3rd resistance R 3 and first capacitor C 1, the DC simulation power circuit comprises dc conversion modules DC/DC and peripheral circuit thereof, wherein, the base stage B of NPN transistor Q is connected with ageing system, receives the control signal AVDD that ageing system sends
H/LAnd to the control circuit input, the emitter E of NPN transistor Q is by the 3rd resistance R 3 ground connection; The collector C of NPN transistor Q is connected with the feedback pin FB of dc conversion modules DC/DC; One end of first resistance R 1 is connected with the current collection pin SW of dc conversion modules DC/DC by schottky diode D1, the other end is connected with the feedback pin FB of dc conversion modules DC/DC, one end of second resistance R 2 is connected with the feedback pin FB of dc conversion modules DC/DC, the other end is connected with the grounding leg GND of dc conversion modules DC/DC, one end of first capacitor C 1 is connected with schottky diode D1, other end ground connection.
In the present embodiment, control signal AVDD
H/LBe the DC voltage of 3.3V or 5V, promptly put into when aging the control signal AVDD of ageing system output 3.3V or 5V as TFT-LCD
H/L, DC simulation power circuit 100 is according to control signal AVDD
H/LProduce maximum DC simulation voltage AVDD
MAXIts principle is: as the control signal AVDD of 3.3V or 5V
H/LWhen being input to the base stage B of NPN transistor Q, NPN transistor Q conducting, then second resistance R 2 and the 3rd resistance R 3 are in parallel, and resistance is reduced, so the maximum DC simulation voltage AVDD of DC simulation power circuit 100 outputs
MAX, and
AVDD
MAX＝VDD*(1+R1×(R2+R3)/R2×R3)；
When the base stage B of NPN transistor Q did not have control signal output, NPN transistor Q was open circuit, and resistance is normal resistance, the typical DC simulation voltage AVDD of DC simulation power circuit 100 outputs
TYP, and
AVDD
TYP＝VDD*(1+R1/R2)。
In the present embodiment, the input pin Vin of dc conversion modules DC/DC receives operating voltage VDD, connects inductance L 1 between input pin Vin and the current collection pin SW, and the syndeton of dc conversion modules DC/DC and other peripheral circuits all adopts the available circuit structure, repeats no more.
In the present embodiment, control signal AVDD
H/LCan directly generate by ageing system, voltage signal to the base stage B of NPN transistor Q output 3.3V or 5V, also can adopt ageing system only to generate the technical scheme of aging engineering identification signal, aging engineering identification signal can be switching signal or high-low level signal, and the voltage signal that is generated 3.3V or 5V by the correspondent voltage circuit is to the base stage B of NPN transistor Q output.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (3)
1. a DC simulation power supply device is characterized in that, comprising:
The DC simulation power circuit is connected with the source drive integrated circult with working power respectively, is used for receiving operating voltage and exporting DC simulation voltage to described source drive integrated circult from described working power;
Control circuit, be connected with described DC simulation power circuit, be used for when the ageing system input control signal, making described DC simulation power circuit to export maximum DC simulation voltage, when ageing system does not have input control signal, make described DC simulation power circuit export typical DC simulation voltage to described source drive integrated circult to described source drive integrated circult.
2. DC simulation power supply device according to claim 1, it is characterized in that, described control circuit comprises NPN transistor, first resistance, second resistance, the 3rd resistance and first electric capacity, and described DC simulation power circuit comprises dc conversion modules and peripheral circuit, wherein:
NPN transistor, base stage is connected with ageing system, is used to receive the control signal that ageing system sends; Emitter is by the 3rd resistance eutral grounding; Collector is connected with the feedback pin of described dc conversion modules;
First resistance, an end is connected with the current collection pin of described dc conversion modules by schottky diode, and the other end is connected with the feedback pin of described dc conversion modules;
Second resistance, an end is connected with the feedback pin of described dc conversion modules, and the other end is connected with the grounding leg of described dc conversion modules;
First electric capacity, an end is connected with schottky diode, other end ground connection.
3. DC simulation power supply device according to claim 1 and 2 is characterized in that, described control signal is the DC voltage of 3.3V or 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101225125A CN101399015B (en) | 2007-09-26 | 2007-09-26 | DC simulation power supply device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101225125A CN101399015B (en) | 2007-09-26 | 2007-09-26 | DC simulation power supply device |
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| Publication Number | Publication Date |
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| CN101399015A CN101399015A (en) | 2009-04-01 |
| CN101399015B true CN101399015B (en) | 2010-09-15 |
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| CN2007101225125A Active CN101399015B (en) | 2007-09-26 | 2007-09-26 | DC simulation power supply device |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943086B (en) * | 2014-04-02 | 2016-07-06 | 合肥鑫晟光电科技有限公司 | A kind of analog voltage source circuit and display device |
| CN106373513A (en) * | 2016-11-15 | 2017-02-01 | 武汉华星光电技术有限公司 | Liquid crystal display aging test method and liquid crystal display |
| CN109473053B (en) * | 2018-11-08 | 2020-09-04 | 惠科股份有限公司 | Circuit for aging display panel and display panel |
| CN109215548B (en) * | 2018-11-08 | 2020-09-08 | 惠科股份有限公司 | Circuit for aging display panel and display panel |
| CN113433720B (en) * | 2021-06-17 | 2022-05-06 | 惠科股份有限公司 | Liquid crystal display panel testing method and device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1371086A (en) * | 2001-02-14 | 2002-09-25 | 株式会社日立制作所 | Liquid crystal drive and liquid crystal display unit |
| CN1522382A (en) * | 2001-07-03 | 2004-08-18 | ���ǵ�����ʽ���� | Apparatus for supplying power and liquid crsytal display having the same |
| CN1873489A (en) * | 2005-06-01 | 2006-12-06 | 三星电子株式会社 | Method of manufacturing liquid crystal display, liquid crystal display, and aging system |
-
2007
- 2007-09-26 CN CN2007101225125A patent/CN101399015B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1371086A (en) * | 2001-02-14 | 2002-09-25 | 株式会社日立制作所 | Liquid crystal drive and liquid crystal display unit |
| CN1522382A (en) * | 2001-07-03 | 2004-08-18 | ���ǵ�����ʽ���� | Apparatus for supplying power and liquid crsytal display having the same |
| CN1873489A (en) * | 2005-06-01 | 2006-12-06 | 三星电子株式会社 | Method of manufacturing liquid crystal display, liquid crystal display, and aging system |
Non-Patent Citations (2)
| Title |
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| JP 特开2006-4918 A,全文. |
| JP特开平11-289761A 1999.10.19 |
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| CN101399015A (en) | 2009-04-01 |
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