CN101395703B - Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement - Google Patents

Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement Download PDF

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Publication number
CN101395703B
CN101395703B CN2007800071946A CN200780007194A CN101395703B CN 101395703 B CN101395703 B CN 101395703B CN 2007800071946 A CN2007800071946 A CN 2007800071946A CN 200780007194 A CN200780007194 A CN 200780007194A CN 101395703 B CN101395703 B CN 101395703B
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layer
wafer
carrier
elastomeric material
boundary layer
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CN101395703A (en
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安德烈亚斯·雅各布
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Thin material Co.,Ltd.
Nissan Chemical Corp
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Thin Materials AG
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Priority claimed from DE200610009353 external-priority patent/DE102006009353A1/en
Priority claimed from DE102006048799.0A external-priority patent/DE102006048799B4/en
Priority claimed from DE102006048800.8A external-priority patent/DE102006048800B4/en
Application filed by Thin Materials AG filed Critical Thin Materials AG
Priority claimed from PCT/EP2007/051952 external-priority patent/WO2007099146A1/en
Publication of CN101395703A publication Critical patent/CN101395703A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Abstract

The invention relates to a wafer-carrier arrangment comprising a wafer (1), a carrier layer system (5, 6) and a separation layer (4) which is arranged between the carrier layer system (5, 6) and the wafer (1). The carrier layer system (5, 6) comprises: i) a carrier layer (6) and ii) a layer made of a hardened, partially hardenend of hardenable elastomer material on the separating layer side, or comprises both layers. The separation layer (4) is: iii) a plasma polymer layer and iv) the adhesive strength between the carrier layer system (5, 6) and the separating layer (4), according to hardening of the elastomer material, is greater than the adhesive strength between the wafer (1) and the separating layer (4).

Description

Wafer-carrier device and manufacturing approach thereof, the layer system that is used for the wafer-carrier device and manufacturing approach thereof
Wafer-carrier device and manufacturing approach thereof, the layer system that is used for the wafer-carrier device and manufacturing approach thereof
Technical field
The present invention relates to a kind of wafer-carrier and arrange that said layout comprises wafer, carrier layer system and is arranged on the boundary layer between carrier layer system and the wafer, and be used for the layer system that this wafer-carrier is arranged.The present invention relates to this wafer-carrier in addition and is arranged in chip back surface processing; Preferably at wafer grinding and/or the purposes when cutting apart; And relate to a kind of method that is used to make this layer system, a kind ofly be used to make method and a kind of processed wafer back side that is used for that this wafer-carrier is arranged, the method for cutting apart especially for chip back surface attenuate and/or wafer.
Background technology
At present there are very high demand in thin as far as possible electronic component and circuit.When making this electronic component and circuit (diode, transistor, IC, transducer etc.), upward apply structure and the layer that is used to produce desired electric function by different processes at wafer (can be the doping disk of processing by silicon, GaAs etc.).Present this wafer provides diaphragm or other protective layers on positive (this face is active face or applies the residing face of structure) after accomplishing required for this reason procedure of processing.The task of this film or layer is, protection front wafer surface and particularly apply superincumbent electricity and mechanical structure during the attenuate subsequently of chip back surface and/or other processing.Attenuate is through carrying out like the wear down (Grinden) of chip back surface, the technology such as (Laeppen), grinding (Schleifen), corrosion of grinding.
The target of this process is to reduce the original thickness of wafer.In this regard, the degree of minimizing is mainly confirmed by machinery desired during attenuate and/or other processing steps at the back and heat load: because wafer will be as long as attenuate will pass through a large amount of processing steps, so it embodies a kind of very high economic worth.Therefore must the risk of broken wafers be remained on the as far as possible little degree.Corresponding therewith, attenuate usually can not carry out on its degree of hoping originally, will excessive loss occur owing to the wafer fracture because on original degree of hoping, carry out the words of attenuate.
According to prior art, usually chip back surface is carried out chemical treatment for the fracture characteristics that improves wafer after the attenuate.After possible purifying step, diaphragm is taken off or removed in addition from wafer surface.Can carry out other procedure of processings subsequently and/or take being used to improve other measures of wafer characteristics and carrying out for example as the inspection that is used for quality control.Utilize metal level repeatedly to apply the back side of thinned wafer.This painting method usually by sputter or similarly vacuum deposition method carry out and cause repeatedly heat load.
After this chip back surface downward (active face upwards) is placed on saw film (Saegefolie), expanded film or the framework.Carry out cutting apart of wafer subsequently, just wafer is divided into discrete component (microplate (Mikroplaettchen), chip (Dies)).Undertaken by rotation cutting disc or other machine saw devices this cutting apart usually.But also use laser separation process.Also wafer is broken off when cutting apart as replacement scheme, wherein, part is used the householder method like cutting.
From alleged reason, adopt the conventional method intractable or make extremely thin wafer.These difficulties also produce in addition thus, and promptly wafer must bear mechanical load during attenuate and afterwards.These loads occur under scenario:
During-the wafer grinding, wherein, if make the wafer extremely thin easy waviness that becomes,
-take off during the diaphragm or protective layer of protection front wafer surface during the attenuate,
-with wafer be placed on the saw film on during and
-between the delivery period between each procedure of processing, but when particularly applying overleaf, wherein, if the back side is coated under the situation that wafer carries out after cutting apart, at least also heat load can appear.
As replacement scheme to alleged method; Also use these methods at present; Wherein front wafer surface just by the such structuring of chemical corrosion, plasma etching of grinding, delineation, ditch and/or the structure of delineating structure, made these structures during reduction process subsequently, from the back side wafer cut apart by machinery and/or chemical method before reduction process.
Open source literature DE103 53 530 and WO2004/051708 disclose a kind of selectable scheme in the above-mentioned technology aspect the attenuate of wafer and the further processing: propose in these documents; Be the attenuate of wafer and the processing use boundary layer and the carrier layer of back; Wherein, Boundary layer is a plasma polymer layer, its than on the wafer more firmly attached to carrier layer on.Through can be by the adhering to or the attachment removal characteristic of the plasma polymer layer of professional adjustment according to the plasma polymerization action method, this layer can constitute like this, and itself and carrier layer are had than the adhesive strength bigger with wafer.In this regard, can adjust like this, extremely thin wafer also can be separated with boundary layer (with carrier layer), and too high mechanical load do not occur with the adhesive strength of wafer.
The shortcoming of disclosed method is in the alleged document; The carrier layer that the there proposes is not an optimum Match: particularly under wafer surface (wafer that for example perhaps has side recessed (Hinterschneidung) as the wafer with flange (Bums) in its surface) situation of three-dimensional structureization; The carrier layer that is proposed (for example polyimides or polyamide) is really up to the mark: because the plasma polymer boundary layer is utilized the surface texture of the constant layer cover wafers of thickness basically, so space such as side are recessed or flange between the space need fill by the material of carrier layer.If this situation, so because the hardness of carrier layer must cause carrier layer to be separated again with wafer with can having destruction.If carrier layer is not filled surface texture, stay so the tack between carrier layer and the boundary layer is had a negative impact and can cause the cavity of undesirable field trash.In addition, because the carrier layer thermal coefficient of expansion different with wafer produces additional mechanical stress to wafer.
Summary of the invention
Therefore the object of the invention is, particularly a kind of layer system that is improved is being provided aspect the carrier layer structure.
According to the present invention, this purpose arranges through a kind of wafer-carrier and is achieved that said layout comprises
-wafer,
-carrier layer system and
-be arranged on the boundary layer between carrier layer system and the wafer,
Wherein, said carrier layer system comprises
(i) carrier layer and
(ii) the boundary layer side by solidify, partly solidified or layer that the curable elastomer material constitutes, perhaps form by these two layers, and
Wherein, said boundary layer does
(iii) plasma polymer layer and
(iv) the adhesive strength between carrier layer system and the boundary layer after elastomeric material solidifies greater than the adhesive strength between wafer and the boundary layer.
Elastomeric material except the elastomer of polymerization, also comprises its low molecular precursor (Vorstufe) (until monomer) in this article.It can be as yet not or only partial cross-linked low molecular liquid or be similar to the material of pasty state.
Corresponding therewith, the curable elastomer material is the commercial habitual precursor of polymer elastomer in the framework of this paper.Partly solidified elastomeric material has been in this article for having produced polymerization/crosslinked curable elastomer material, but polymerization/crosslinked does not finish as yet and/or can carry out further polymerization/crosslinked through selectable chemistry or physical mechanism when needing.The elastomeric material that solidifies is its polymerization/crosslinked elastomer that finishes basically in the framework of this paper.It should be noted that in this case that polymerization/crosslinked end is meant exists traditional elastomer.
" plasma polymer layer " is a kind of layer that can make by the plasma polymerization effect in the framework of Ben Wenben.The plasma polymerization effect is a kind of method, and wherein the precursor of gaseous state (being also referred to as monomer usually) is deposited upon on the substrate that can freely select as highly cross-linked through plasma excitation.The prerequisite of plasma polymerization effect is to have atom such as carbon or the silicon that forms chain in the working gas.Through excitation, the molecule of gaseous material (precursor) is splinter through the bombardment that utilizes electronics and/or high energy ion.Meanwhile produce the free radical that highly encourages or the molecular fragment of ion, they in gas compartment, react to each other and be deposited on the surface that will apply.The discharge of plasma and strong ion thereof and electron bombard continuous action are further reacted the height combination that also can realize molecule deposition in this sedimentary deposit thereby can on sedimentary deposit, cause.
In the framework of Ben Wenben, notion " plasma polymer layer " also comprises can be by the layer of plasma enhanced chemical vapor deposition (PE-CVD) manufacturing.In this case, for the control reaction is extra substrate is heated.So for example can make SiO by silane and oxygen 2-coating.It is emphasized that in addition the atmospheric pressure plasma method also can be used to make according to the present invention the plasma polymer layer that will use, although preferred lower pressure Plasma Polymerization at present.
In the framework of Ben Wenben, will be used for being called " monomer " (gaseous precursors) as gas or vapor to the material of plasma through plasma polymerization effect cambium layer.What be called " liquid precursor " is that the for example effect through plasma particle, electronics or the UV radiation of highly excitation (for example through) can be crosslinked and evaporated liquid in advance.
Plasma polymer layer is obviously different with polymeric layer on its micro-composition.Under the polymer situation; The cohesive process of monomer carries out with foreseeable mode; And at plasma polymerization on; Employed monomer is through contacting acute variation (until destroying fully) and with reactive materials form deposition with plasma, thereby forms a kind of highly cross-linked layer, and the zone of repetition regularly not.Corresponding therewith, plasma polymerization acts on the meaning of this paper different with plasma-induced polymerization.This point also is applicable to so-called " forming the plasma polymerization effect of structure ", because under " gentleness " condition of plasma, also unpredictalbe molecular breakdown can occur.
Among the WO2004/051708A2 that mentions in front, disclose and be applicable to plasma polymer layer of the present invention.Said document is incorporated this paper into way of reference.This is specially adapted to be used among the WO2004/051708A2 make the information of plasma polymer boundary layer and boundary layer itself.
Patent documentation DE100 34 737C2 equally also disclose and can be used for plasma polymer boundary layer of the present invention.But what need consider here is; Must be with respect to wafer orientation and therefore be deposited under the situation on the wafer in the plasma polymer boundary layer in the surface of the stronger attachment removal effect of the disclosed plasma polymer boundary layer in there, the reaction of plasma process control correspondingly with DE10034 737C2 in disclosed mode carry out on the contrary.Under this prerequisite, therefore the disclosure of DE100 34 737C2 particularly incorporates this paper into way of reference in deposition process and the plasma polymer boundary layer disclosure aspect own.
The professional can confirm the adhesive strength between each layer and it is defined as " total adhesion between coating and its background " according to DIN971-1:1996-09.
The advantage of arranging according to wafer-carrier of the present invention is, because the characteristic (pliability, dilatancy) of elastomeric material, is between the boundary layer on the wafer when needing in carrier layer and can produces desirable being connected.Particularly the adhesive strength between the layer of plasma polymer layer and elastomeric material formation can be adjusted like this; When separating between the carrier layer system that the layer that carrier layer and elastomeric material are constituted is formed and the wafer, boundary layer remains adhered on the elastomer layer.Exist on the wafer under the recessed situation of three-dimensional surface structure such as flange and side simultaneously, also can with the wafer good separation.
Elastomer layer advantage in addition is, it is the tension force that occurs owing to the different heat expansion coefficient of linear expansion between carrier layer of using in each case and the wafer of balance within the specific limits.Another major advantage of elastomer layer is; Its convexity on the front wafer surface that the mechanical stress that prevents under the enough situation of thickness to occur owing at wafer grinding the time causes is flange extruding wafer for example, thereby injustice possibly occur and breaking-up wafer under extreme case.
For purposes of the invention importantly, the selection of elastomeric material and plasma polymer boundary layer both with this material also with various situation under the coupling of the wafer surface that exists.(perhaps PECVD method) adjustment plasma polymer boundary layer when the professional is controlled at the plasma polymer deposition process through appropriate method.The boundary layer of plasma polymer is facilitated required attachment characteristic in this regard, and making that wafer-carrier is arranged under the coating systems situation can be so that operation.This point especially also is applicable to the processing during the attenuate.On the other hand, the carrier layer system must can be by rights and wafer-separate.The plasma polymer boundary layer is mentioned formation aspect its adhesive strength, makes between wafer surface (for example equally also can comprise other layers as passivation layer) and the boundary layer to have predetermined breaks (Sollbruchstelle).In this regard, for the attachment characteristic of this predetermined breaks, the load tolerance (Belastungstoleranz) of wafer behind the attenuate between operability before separating (or the load that occurs here) and separation period importantly.
Self-evident, as the to play an important role layer that also has elastomeric material to constitute.The hardness of elastomeric material must make said material enough soft, preferably the wafer surface of no cavity investing mechanismization (interface that wherein, can have the structure postforming on the structure on surface).In addition; Silicone materials must be enough hard or cocoa change sufficiently rigid state into; The carrier layer system is applied on the wafer surface (indirectly) afterwards, guarantees the operability of wafer-carrier layout because the plasma polymer boundary layer is arranged between wafer surface and the boundary layer system.Particularly elastomer layer itself must be enough firmly, make and separate between wafer and the plasma polymer boundary layer and elastomer layer itself does not ftracture basically.
Self-evident, the professional be readily appreciated that two layers forming the carrier layer system (carrier layer and by solidify, partly solidified or layer that the curable elastomer material constitutes) each other adhesive strength must be greater than the adhesive strength between boundary layer and the wafer.
When structure was arranged according to wafer-carrier of the present invention, elastomeric material must be enough soft as already mentioned, so that surround the form of wafer surface fully.This point for example can realize thus that promptly curable elastomeric material is with spin coating or spraying or be applicable to that other technology mode liquid state of coating liquid material are coated on the wafer that is coated with the plasma polymer boundary layer.The elastomeric material of liquid curable must be cured subsequently, so that can satisfy its function.As selection, also can curable or partly solidified elastomeric material be coated on the carrier layer and continue when needing partly solidified, thereby produce gelatinous denseness.Self-evident, offer being connected of the layer that constitutes for carrier layer and elastomeric material the professional from for example through the bonding a large amount of possibilities of sulfuration (Vulkanisieren) until extruding.Here, the professional selects appropriate method according to employed material under the various situation.
In case made the carrier layer system, just can it be connected with the top wafer that has deposited the plasma polymer boundary layer.This point for example can be carried out through extruding, but the technology that also can use other physics and/or chemical generation to adhere to.The material that the professional here also uses according to reality was both also selected corresponding method as the layer that elastomeric material constitutes as boundary layer.In addition, if desired with boundary layer and wafer-separate, the professional considers the residing state of elastomeric material in this regard.This point is particularly significant under following situation, promptly when when wafer surface is connected, full solidification-this is not a kind of preferred scheme to elastomeric material as yet with (being coated with plasma polymer).
Self-evident, the professional it is understandable that for the plasma polymer boundary layer with enough elasticity and expansiveness, said plasma polymer boundary layer also can be deposited on the layer of curable elastomer material formation.In this case, in the step of back, just will deviate from the carrier layer system that comprises plasma polymer layer on the face of carrier layer and be connected with the proper method that wafer adheres to through generation.Important here also is to surround structurized wafer surface when needing well.The professional it should be noted that especially; When manufacturing is arranged according to wafer-carrier of the present invention; The layer that elastomeric material constitutes carries out whole surface distributed and said layer system as far as possible with respect to wafer surface, does not have fully preferably that air is mingled with or cavity is made.This point particularly realizes in a kind of preferred version of the present invention thus; Be the curable elastomer material of the layer that constitutes of elastomeric material or partly solidified elastomeric material enough " liquid state ", so that (because the plasma polymer boundary layer is indirect) surrounds the structure on wafer surface.Then can be cured then.Self-evident, lamination also can carry out under vacuum condition.
The curing of curable elastomer material or partly solidified elastomeric material through by the professional that select with mode match materials, for example through carrying or extract the energy of hot form or for example polymerization and/or sulfurization are carried out through suitable chemical reaction.
Self-evident, the professional should understand layer that elastomeric material constitutes and needn't be made up of also this material fully and can also comprise suitable additive.But wherein mechanical property embodies through elastomeric material basically.This layer is self-evident to be elastomer layer after solidifying as beforely.
What for the professional, be readily appreciated that is, arranges according to wafer-carrier of the present invention also to comprise other layers, for example resemble that carrier layer and elastomeric material constitute layer between adhesive phase.At last importantly, said layer all can be realized its function under various situation, that is to say, particularly
Adhesive strength between-boundary layer and the wafer is a minimum adhesive strength between two layers in the whole layer system, thereby predetermined breaks is provided between boundary layer and wafer,
The layer that-elastomeric material constitutes has surface texture besieged denseness on required degree of guaranteeing wafer when layer system is connected with wafer,
The layer that-elastomeric material constitutes makes layer system enough stable for the further processing of wafer after solidifying, and it is particularly enough stable, so that wafer is when separating (perhaps opposite) with boundary layer, and not layer not the breaking of elastomeric material formation, and
It is enough stable that-carrier layer is arranged wafer-carrier.
The layer that constitutes at elastomeric material in some cases can also be born the function of carrier layer simultaneously.
At last, be arranged in the back side processing that can make wafer under the above-mentioned prerequisite according to wafer-carrier of the present invention and obviously carry out with being more prone to, because simple to operate and have a suitable stabilizing layer system.Particularly can be with wafer attenuate greatly, because because the mechanical stress of relatively little (and can control to a great extent through the selection plasma polymer layer) appears in the plasma polymer boundary layer when wafer separates with layer system.
What aspect boundary layer, note also is, self-evident it is understandable that for the professional, and the plasma polymer boundary layer not necessarily must or be deposited on the wafer or be deposited on the layer that elastomeric material constitutes.Boundary layer also can at first be independent of the layer manufacturing of wafer and elastomeric material formation and for example be connected through extruding with them subsequently in principle.But preferred boundary layer is deposited on the wafer surface, because the profile tracer of wafer surface obtains best the assurance through the plasma polymer boundary layer like this.
Preferred in addition a kind of foundation wafer-carrier of the present invention arranges, said layout is included in the connection material layer and second carrier layer on the face (back side of wafer) that wafer back separates interlayer.
Be understood that easily, after the processed wafer back side, just produce the wafer-carrier of just having introduced certainly and arrange.It is emphasized that in this regard second carrier layer can be different fully with first carrier layer on material.Connecting material layer is used for second carrier layer is connected with wafer.Concerning these materials that can construct, importantly, guarantee separable by rights connection the between second carrier layer and the wafer differently.Connecting material layer for example can be the adhesive phase of UV or thermal release, and it reduces under the effect of UV light radiation or heat energy or loses its adhesive force.Self-evident, preferably after the corresponding reduction of adhesive force, the least possible at this, particularly preferably do not connect material layer and stay on the wafer.Connecting material layer when needing can be the plasma polymer boundary layer from its that aspect, its to the adhesive force of second carrier layer greater than adhesive force to wafer.
The advantage of this second carrier layer can be to be convenient to attenuate and/or the operation of the wafer cut apart, and can make or help layer system and the wafer-separate (this being continued to consult the hereinafter content) on the front wafer surface when needing.
Part of the present invention also has a kind of carrier layer system that is used for according to wafer-carrier layout of the present invention, and said layer system comprises
(i) carrier layer,
(ii) by solidify, partly solidified or layer that the curable elastomer material constitutes and
(iii) deviate from the diaphragm of taking off on the face of carrier layer at the layer that elastomeric material constitutes.
The diaphragm that can take off is the film that can remove from elastomeric material according to mechanical approach noresidue ground at this.
The foundation of being introduced carrier layer of the present invention system uses according to the preparatory stage of wafer-carrier layout of the present invention and when manufacturing is arranged according to wafer-carrier of the present invention.This point can be carried out thus, promptly removes the diaphragm that can take off and subsequently the carrier layer system is pushed perhaps with the wafer that has the plasma polymer boundary layer to be connected with other suitable modes.
The advantage of this carrier layer system particularly since diaphragm can finely deposit and transport and also can produce in place away from wafer manufacturing and processing.
Part of the present invention also relates to a kind of layer system that is used for according to wafer-carrier layout of the present invention, and it comprises
(i) carrier layer,
(ii) by solidify, partly solidified or layer that the curable elastomer material constitutes and
(iii) deviate from the plasma polymer boundary layer on the face of carrier layer, wherein, also preferably on the plasma polymer boundary layer deviates from the face of carrier layer, the diaphragm that can take off is provided here at the layer that elastomeric material constitutes.
As long as aforementioned prerequisite is fit to the plasma polymer boundary layer, this product also can be used for making according to wafer-carrier of the present invention especially effectively to be arranged.Being also advantageous in that here, layer system can be made and can be used as prefabrication separately and used.
Part of the present invention also relates to a kind of foundation wafer-carrier of the present invention and arranges or a kind of foundation layer system of the present invention; Wherein, Said elastomeric material is starkly lower than the typical Shore-A hardness under the solid state in the Shore-A hardness under the partly solidified state; This typical Shore-A hardness is 15～78, and is preferred 20～70, further preferred 30～60 with especially preferred 40-55.
Significantly lower Shore-A hardness is meant than the Shore-A hardness of hanging down 10%, preferred 20% and preferred especially 40% under the solid state at least under the partly solidified state.There is not Shore-A hardness to widely applying particularly preferably in reality under the partly solidified state; Because elastomeric material (going back) is not the mould that has Shore-A hardness on the traditional sense body (Formhaertkoerper) of quenching; But with pasty state, when needing or even the state that can flow exist.
As stated; The partly solidified state of the layer that elastomeric material constitutes is used to facilitate elastomeric material to produce suitable denseness; Make it surround (being covered) wafer surface form, when lamination, do not flow freely but then by the plasma polymer boundary layer with enough degree.
The partly solidified state of elastomeric material can produce according to different modes.If the curing of elastomeric material (for example polymerization) realizes with thermal control, just only carry heat energy, until reaching desired partly solidified state to elastomeric material.Solidify (polymerization) reaction when needing accordingly also can for example interrupt perhaps on desired degree, slowing down as cooling off through discharging heat targetedly.This point is particularly suitable under the only thermoinducible situation of curing reaction.
Can solidify the elastomeric material of (polymerization and/or crosslinked) by two kinds of mechanism as selecting to use.This point for example can realize through different reactive groups is provided in the curable elastomer material.For example, can at first carry out curing/polymerized/cross-linked that UV facilitates, and (self-evident facilitate through the plasma polymer boundary layer) just begins for example second kind of reaction mechanism of chemistry afterwards only on contact wafer surface.
For many application, also can preferably use the curable elastomer material, it is perhaps during partly solidified process, depending on continuous energy delivery (for example light/UV light/heat) during the solidification process at least, to keep solidification process.
Arrange or a kind of foundation layer system of the present invention that according to the preferred a kind of foundation of the present invention wafer-carrier of the present invention wherein, elastomeric material is perhaps being made on the polysiloxanes basis on the material foundation that is similar to polysiloxanes aspect its characteristic.
Important in this respect characteristic in this case particularly mechanical strength, thermal endurance, vacuum compatible property and with the low chemical reactivity of other materials.
The preferred material of elastomeric material is silicone elastomer, rubber and the material that is similar to rubber.
Preferred in addition a kind of foundation wafer-carrier of the present invention arranges or a kind of foundation layer system of the present invention that wherein, carrier layer is polyimides or aramid layer, preferably adopts the mode of Kapton or Ultem film, is glassy layer or silicon layer.
Preferred especially a kind of foundation wafer-carrier of the present invention arranges, wherein thermal coefficient of expansion and the thermal coefficient of expansion of wafer of carrier layer linear expansion under 20 ℃ differs maximum 10.0*10 -6/ ℃, preferred maximum 5*10 -6/ ℃, further preferred maximum 2.5*10 -6/ ℃, preferred especially maximum 1.8*10 -6/ ℃.
The advantage that the last foundation of being mentioned wafer-carrier of the present invention is arranged is, selects the effect of carrier layer materials to be according to thermal coefficient of expansion, makes to occur very little between wafer and the carrier layer or the mechanical stress based on the different expansions of material preferably do not occur.
Corresponding therewith, the glass of carrier layer preferred glass or modification, this glass aspect its thermal coefficient of expansion with the thermal coefficient of expansion of wafer only have very little difference or with form the wafer identical materials in fact.In this case, it is desirable to use the Borofloat33 glass like supplier Planoptik, its thermal coefficient of expansion under 20 ℃ of room temperatures is 3.2*10 -6/ ℃, therefore very approaching with the thermal coefficient of expansion of silicon.
But preferred especially a kind of at this at the glass that is complementary aspect its thermal coefficient of expansion, because this glass is quite inexpensive generally speaking and light and/or UV light can see through the layer that can (part) curing elastomer material constitutes by it in addition.
Also preferred a kind of foundation wafer-carrier of the present invention arranges, wherein, second carrier layer is flexible greater than first carrier layer of film and preferred especially second carrier layer flexible.
Flexiblely carry out more as follows: for carrying out the flexible comparison of two layers, produce respectively by the material of forming layer and to have equal length and width and highly be the body of bed thickness separately.Preferred these body longitudinal extensions.Subsequently an end of body is fixed, and applied definite power to the other end.Relatively original plane that body that bigger (elasticity) deflection occurs has bigger flexible through on loose end, applying power.In this regard, the flexible strain that relates generally to, rather than stiff for example as press-bending.
Particularly carrier layer less by flexibility/situation that flexible materials with smaller is for example formed as glass under; Advantage for wafer and boundary layer mechanical separation is; (attenuate) wafer can be crooked jointly together with the layer system on its back side; Thereby wafer is on the one hand through the protection of the carrier layer on its back side, and occurs mechanical shear stress on the other hand, makes to throw off being connected between wafer and the boundary layer to become easy.Self-evident, separation process can for example be supported (to this also referring to following content) as slewing rollers and advantageously carrier layer fixed in addition through the mechanical assistance instrument.
The special preferable material of second carrier layer is by one deck or the film formed of multilayer PP, PE, PET and/or other plastics more at this.The material of preferred second carrier layer can expand.This film for example is saw film (being also referred to as " blue film (bluetape) " in the industry usually), as being provided by manufacturer such as Lintec or Nitto.
The foundation wafer-carrier of the present invention that preferably has second carrier layer arranges that wherein, said connection material layer comprises or is made up of the material that is preferably adhesive, and this material perhaps disappears to adhesive force reduction under the effect of radiation and/or heat of wafer.
This preferred connection material layer can make the also preferred noresidue of second carrier layer and wafer separate.This separation is carried out at wafer and plasma polymer boundary layer after separating usually.The last wafer that can obtain not have the layer system that is used to process in this manner.
Concerning many application; Preferred a kind of foundation wafer-carrier of the present invention is arranged or a kind of foundation layer system of the present invention; Wherein, The layer and/or second carrier layer that carrier layer and/or elastomeric material constitute constitute like this, make them can the static loading and/or can be fixed by the face of static loading.
Be the corresponding layer of preferred formation (but static loading), professional's a series of possibilities capable of using.Desired effect on the one hand can be through selecting each layer (mainly) but material or through mention to one or more layer in the particle of the corresponding static loading of adding obtain.
The advantage of this preferred implementation of the present invention is, can also can fix according to wafer-carrier of the present invention with the surface generation interaction of static loading by the static characteristic of layer and arrange (for example being used for transporting).Self-evident, also can for example fix for different processes as attenuate or back face metalization.The static fixedly processing under the against vacuum condition is particularly advantageous.
According to the also preferred a kind of foundation of the present invention layer system with diaphragm of the present invention, wherein said diaphragm for example can be to be coated with the paper of polysiloxanes or the film of being made up of PP, PE, PET or other plastics.The key characteristic of film is can be easy to separate with the elastomer layer of carrier with preferred noresidue ground again.
When part of the present invention also relates to the boundary layer of layer that the elastomeric material of curing constitutes and plasma polymer and/or is arranged in the processed wafer back side according to layer system of the present invention and/or foundation wafer-carrier of the present invention, preferably at the attenuate of wafer and/or the purposes when cutting apart.
Part of the present invention also relates to according to the purposes of layer system of the present invention when manufacturing is arranged according to wafer-carrier of the present invention.
In addition, part of the present invention also comprises a kind of method that is used to make foundation layer system of the present invention, said method comprising the steps of:
A) formation of carrier layer,
B) formation of the layer of curable elastomer material formation,
C) will be at step a) and b) in the layer that produces be connected, preferably with step a) or b) simultaneously,
Solidify the layer that perhaps partly solidified curable elastomer material constitutes when d) needing,
Deviate from deposition plasma polymer boundary layer on the face of carrier layer at the layer that elastomeric material constitutes when e) needing,
The diaphragm that can take off when f) needing is applied on the face that layer that elastomeric material constitutes deviates from carrier layer or the plasma polymer boundary layer deviates from the face of carrier layer.
What for the professional, be readily appreciated that in this regard is, is called as step when needing and depends on the execution mode that should make which kind of layer system (preferred when needing) in this method respectively and implement.
Particularly in step d), the layer segment that preferred curable elastomer material constitutes solidifies, and accomplishes its task and can solidify afterwards contacting (facilitating through the plasma polymer boundary layer) with wafer surface with the best.
Part of the present invention also relates to a kind of method that is used to make foundation wafer-carrier layout of the present invention, said method comprising the steps of:
A) wafer is provided,
B) provide according to layer system of the present invention; Wherein, If the layer system that is provided comprises the plasma polymer boundary layer, this boundary layer constitutes like this, make between carrier layer system and the boundary layer adhesive strength the carrier layer system be connected with wafer and elastomeric material solidify after greater than the adhesive strength between wafer and the boundary layer; Wherein said connection is facilitated through boundary layer
Take diaphragm off from layer system when c) needing,
D) if the layer system that is provided does not comprise the plasma polymer boundary layer; Be deposited upon on the layer that wafer or elastomeric material constitute this so; Make between carrier layer system and the boundary layer adhesive strength the carrier layer system be connected with wafer and elastomeric material solidify after greater than the adhesive strength between wafer and the boundary layer; Wherein said connection is facilitated through boundary layer
E) wafer that layer system is applied with the plasma polymer boundary layer when needing be connected and
F) curing of elastomeric material.
In said foundation method of the present invention, key is the starting point of professional's introduction from the front is particularly selected each layer relatively with its function a material.The degree that elastomeric material solidifies, preferably through at first partly solidified and curing subsequently, the professional also will adjust according to demand separately.
It is also noted that, for producing and being connected each layer and having various possibilities can supply the professional to use.Lamination for example can carry out through extruding, bonding or chemical connection, wherein, must satisfy the prerequisite that the front is introduced all the time aspect layer and the layer adhesive strength to each other, so that make layer can realize that it is according to function of the present invention.
Also have different possibilities can supply the professional to use according to material chosen to producing layer, therefore, layer for example can be at first with the spin coating that is applicable to coating liquid material or spraying process is liquid applies, but they can be from the beginning apply with the mode of film.Only otherwise the above-mentioned functions of influence layer, also can use promote to adhere to or reduce the material that adheres to and this use according to the layer function that will obtain also be suitable.
Part of the present invention also has a kind of method that is used for the processed wafer back side, said method comprising the steps of:
A) make according to wafer-carrier layout of the present invention, it (is gone back) on chip back surface and is not comprised the connection material layer and second carrier layer, and
B) back side of processed wafer.
In the preferred in the end said foundation method of the present invention with the thinning back side of wafer.This point can for example be carried out as wear down, grinding, grinding or corrosion through traditional method.
Self-evident, also can on the basis of arranging according to wafer-carrier of the present invention, effectively take other measures that is used for the processed wafer back side, for example as the metallization at the back side, by the structureization of corrosion and the doping at the back side.
For the professional, can directly be understood that, also can under vacuum condition, implement according to many steps of method of the present invention.This point preferably is applicable to be connected (the particularly extruding) of layer with the wafer of elastomeric material formation; Wherein, the plasma polymer boundary layer that is between the layer that wafer and elastomeric material constitute is being on the wafer on the time point that contact or unimportant on elastomeric material constitutes layer.
Preferred a kind of foundation method of the present invention wherein, applies the connection material layer and second carrier layer on the back side at wafer after the back side processing of accomplishing chip back surface.
Self-evident, mention at last the layer apply like this, make these layers to each other and and wafer between adhesive strength greater than the adhesive strength between wafer and the plasma polymer boundary layer.
Corresponding therewith, preferably a kind ofly be used for the method at the processed wafer back side according to the present invention, wherein after step c), separate between wafer and the plasma polymer boundary layer after step b) and when needing.
In carrier layer is under the situation of the layer that for example this flexibility is very little as sheet glass, preferred especially this method.Particularly using than this carrier layer under the flexible second higher carrier layer situation, wafer can carry out according to method for optimizing of the present invention from the separation of boundary layer is corresponding as follows:
Carrier layer is fixed on it deviates from the face of wafer.This for example especially for sheet glass as accomplishing by the suction of vacuum under the situation of carrier layer.But also can be for example through clamping mechanical fixation.Second carrier layer that will preferably exist with the film mode is now mentioned by proper device.This device for example can be a guide roller; Designing like this aspect its radius; Make its by wafer, connect system that material layer and second carrier layer form when crooked, only by maybe or even getting rid of hardly because the masterpiece of mechanical stress damage wafer is used for wafer.Self-evident in this regard it is understandable that, wafer grinding is many more, and just it becomes thin more, and the bending that it bore is high more.
Through mentioning by second carrier layer, connect the system that material layer and wafer are formed, on the predetermined breaks between plasma polymer boundary layer and the wafer, separate.As by the agency of, this separation preferred mechanical ground carries out.In this regard, for example using under the situation of guide roller and can select feed speed like this, making the wafer nonoverload but the plasma polymer boundary layer is separated with wafer fully.After separating does not produce also can continue processing when needed for the front wafer surface of processing the layer system that is applied.
Preferred a kind of foundation method of the present invention is wherein also separated second carrier layer with the boundary layer after separating at wafer.This preferably carries out under the adhesive force situation that reduces between connection material layer and the wafer.For example reducing or losing under the adhesive case of its bonding effect, perhaps carry heat energy to reduce adhesive force through the UV radiation through UV radiation or heat energy.This point also is the part according to method for optimizing of the present invention.
Preferred in addition a kind of foundation method of the present invention, wherein wafer is cut apart before removing the plasma polymer boundary layer and/or before removing second carrier layer.This point for example can be carried out thus, and promptly the plasma polymer boundary layer is divided into microplate (chip) by appropriate method (to this for example with reference to foregoing) after separating with wafer.But corresponding separation also can be before applying second carrier layer, and the plasma polymer boundary layer is still carried out during on the wafer.
The advantage of this method is, the wafer of cutting apart (just in fact its part of having cut apart) as long as also just contact with the carrier layer or second carrier layer keeps together, and the single matrix of layer system also keeps together separately.Naturally it is understandable that for the professional suitable in many cases is when wafer is cut apart, not separate or at least not exclusively separate each layer system.
Below about doing further prompting with making according to wafer-carrier layout of the present invention or according to layer system of the present invention according to method of the present invention:
-use liquid precursor:
As WO2004/051708A2 by the agency of, be the attachment characteristic (or attachment removal characteristic, stalling characteristic) of adjustment plasma polymer layer, it can be favourable using liquid precursor.Mixture as liquid precursor particularly suitable silicone oil and appropriate solvent in framework of the present invention.
Liquid precursor for example can be by spin coating, spraying, and wherein wafer rotates respectively, pours into a mould, and wherein utilizes precursor from top cast wafer surface, or dipping, wherein wafer is immersed in the precursor (back side that covers together with film when needing) and is coated on the wafer.
In this regard; For many application, advantageously be coated in precursor on the wafer like this; Even bear on the position of extra high shear action when in the recessed zone of side of key or between wafer and the plasma polymer boundary layer, separating, produce thicker precursor layer.
Crosslinked when precursor needs as introducing in the foregoing open source literature, this also can carry out when the plasma polymer boundary layer deposits by plasma.If precursor layer is thickness big (thicker) on several positions, sedimentation or cross-linking method just can constitute like this, make precursor not crosslinked or not exclusively crosslinked on the position of key especially.Therefore it also for example exists and in the tack between extra reduction wafer surface and the boundary layer on the crucial especially position as oil or with partial cross-linked mode.On position crucial on the form, be more prone to separating particularly between wafer and the boundary layer thus.
Can preferably solvent evaporation be fallen (if precursor comprises solvent) after applying precursor.This for example can be through the suction solvent steam, place vacuum chamber or support through heating.
-elastomeric material
The elastomer that preferred elastomeric material is based on polysiloxanes is the Wacker of manufacturer for example, and Burghausen adheres to liquid polysiloxane rubber, ELASTOSIL LR3070 or LR3070 type certainly.As the other materials of selecting to use natural gum, the rubber of solid state or have rubber elastomer characteristics.Certainly can also use the suitable mixture or the layer compound of different elastomeric materials.
Certainly the Shore hardness of the layer that constitutes of elastomeric material under partly solidified and solid state, be complementary with its function respectively (with reference to noted earlier).For the professional suitable material and possibility is provided at this.
If it highly is the flange of 50 μ m for example that wafer to be processed for example has in its surface, Shore hardness is 20～60th, and is favourable.Self-evident for the professional is that the thickness of the layer that elastomeric material constitutes must enough surpass the height of flange.
Coating can for example be carried out through scraper plate by the layer that the curable elastomer material constitutes.The crosslinked of this layer can carry out through a plurality of steps (partly solidified, curing) as stated.The for example above-mentioned Wacker of manufacturer, the polysiloxane rubber of Burghausen can be through being squeezed within 5 minutes sulfuration and crosslinked/cured thus under 165 ℃.
With the partial cross-linked temporary transient curing that similarly it is also conceivable that the layer that elastomeric material constitutes, for example through cooling or deep cooling.This process also obviously can be used to interrupt curing reaction (cross-linking reaction) as stated.Corresponding cooling preferably under dry atmosphere, stops the air humidity condensation under protective gas atmosphere when needing.
If the layer that elastomeric material is constituted cools down, when then this layer contacts with wafer surface or before (for example through pushing) for example heating/the thawing under protective gas atmosphere be suitable.
-lamination
Lamination can utilize connector (Bonder) to carry out, and wherein the pressure of vacuum, temperature, UV light, lamination or these parameters of duration are used as required and/or selected by the professional.
The layer thickness of the layer that-elastomeric material constitutes is set
This can preferably utilize two extruding punch dies of mechanical brake (Anschlags) and/or parallel importing connector to carry out.
Thickness (highly) control of arranging from the purpose implementation basis of quality assurance wafer-carrier of the present invention can be favourable.
-the second carrier layer:
Can use the saw film (being also referred to as blue film) that preferably has expansion characteristics as second carrier layer.This saw film is provided by manufacturer such as Lintec, Nitto or Advantek.Preferably use the film of the Advantek of manufacturer as second carrier layer, for example have the sort of of the responsive adhesive of presser sensor adhesive (for example DX112A type) or UV (for example DU099D type) with adhesive linkage.The adhesive force of this saw film as second carrier layer is measured as 700gr. according to ASM D 1000 methods.Considering under the situation of this adhesion that separating between plasma polymer boundary layer and the wafer can be carried out under the situation that applies pulling force to second boundary layer (also with reference to below content).
In this respect importantly, wafer is enough big with the adhesive force of second carrier layer (facilitating through being connected material layer when needing), makes its adhesive force that surpasses wafer and boundary layer (also comprising the knockout press that for example when the flange demoulding (Entformen), occurs).If second carrier layer is made up of DU099D type saw film, the adhesive force that radiation that just can be through UV light will be measured according to ASM D 1000 methods drops to 20gr also so prepare separating of second carrier layer and wafer from original 700gr.
Description of drawings
By accompanying drawing and embodiment the present invention is elaborated below.Self-evident, the present invention is not limited to accompanying drawing and/or embodiment.Wherein:
Fig. 1 illustrates according to the present invention and is used for the layer system that wafer-carrier is arranged;
Fig. 2 illustrates according to wafer-carrier of the present invention and arranges;
Fig. 3 illustrates the sketch map according to the possible separation process of the present invention, wherein separates between wafer and the plasma polymer boundary layer.Embodiment
Foundation shown in Figure 1 layer system of the present invention comprise boundary layer 6, by solidify, partly solidified or layer 5, plasma polymer boundary layer 4 that the curable elastomer material constitutes and the diaphragm 9 that can take off.
Wafer-carrier shown in Figure 2 is arranged and is comprised wafer 1; It comprises the active area 2 and passivation layer 3 with electricity and/or mechanical function element; Plasma polymer boundary layer 4; Its profiling covers the wafer surface that comprises flange 7, the layer 5 and the carrier layer 6 that are made up of elastomeric material curable, partly solidified or that solidify.
Fig. 3 illustrates the sketch map according to separation process of the present invention, wherein separates between wafer and the plasma polymer boundary layer.At wafer this illustrate 1, its part cut apart (8) and the layer that on its front, constitutes with plasma polymer boundary layer 4, by the elastomeric material that solidifies 5 is connected with carrier layer 6.Carrier layer 6 is preferably sheet glass.Carrier layer 6 is fixed on the substrate 16 (for example conveyer belt).Second carrier layer 17 through guide roller 11 on wafer 1,8 back sides of attenuate by roller 10 laminations.Connecting material layer does not illustrate separately.Second carrier layer exists as film.The wafer-carrier layout that produces like this after the lamination for example is transported to roll 13 through the motion of substrate 16, and wherein, second carrier layer 17 is passed through roll 13 with 180 °, and substrate 16 does not change direction from roll bypass mistake.Separate on plasma polymer boundary layer 4 and wafer 1, position 12 between 8 through this set.Wafer remains adhered on second carrier layer 17 and can transfer in the framework 14 subsequently.
Film frame (Filmframe) 15 commonly used in consequent frame film with wafer (part) 1,8 and the semi-conductor industry is corresponding, and can handled easily with simplify transportation.Tack that can be through reduce connecting the material layer (not shown) when needing is with wafer 1 or its part of cutting apart 8 (as microplate), for other purposes are separated with second carrier layer.
Embodiment
6 inches wafers of the about 700 μ m of thickness need be thinned to the thickness of 50 μ m, with its back face metalization, test, cut apart by saw then.Be on the front wafer surface is the flange of height 60 μ m and diametral pitch (Pitch) 150 μ m.
Wafer utilizes precursor to apply from its front by the sprayer of the Garching of manufacturer
Figure G2007800071946D0021151049QIETU
, and said precursor is formed by the AK50 type silicone oil of the Wacker of 1 part of Burghausen of manufacturer with as 500 parts of isopropyl alcohols of solvent.Adjust sprayer like this at this, make its assurance utilize the even coated wafers of precursor surface.
Wafer places aspirator with wafer after applying by spraying.Volatile solvent evaporation and on wafer surface, stay the layer that the thick silicone oil of about 120nm constitutes under this suction.
Now wafer is sent in the vacuum chamber.This vacuum chamber vacuumizes now, wherein, evaporates and extracts last remaining solvent out.As disclosed among the WO2004/051708 plasma polymer boundary layer is deposited on the wafer subsequently.
Use the sheet glass of 6 inches of diameters and thickness 2.5mm as carrier layer.At this, glass has at room temperature the thermal coefficient of expansion near silicon.
On the one side of sheet glass, apply the thick polysiloxane rubber layer of 300 μ m.This polysiloxane rubber is the material of the WACKER of the Burghausen of manufacturer, and name is called ELASTOSIL LR3070 and Shore hardness is 50.This material be grouped into by two kinds of one-tenth and must be in blender before it uses with the mixed of 1:1.Now two kinds of constituents mixts are poured on the one side of sheet glass.Sheet glass sinks to being in the precision die (Passform) in this case.At this, the surface of precision die upper side and sheet glass upside has the difference in height of about 300 μ m.Now elastomeric material is distributed like this by scraper plate, make and form the thick conforming layer of 300 μ m on the glass surface.Wipe elastomeric redundance off.At this advantageously, the material of precision die and scraper plate is selected like this, makes itself and elastomer only have the tack of non-constant.
With the elastomer layer that lies in the sheet glass in the precision die and applied (polysiloxane rubber) now the short time be heated to about 120 ℃, therefore and begin the sulfidation (partly solidified) in the elastomer.It is only partial cross-linked and have so many self intensity to reach elastomer thus, sheet glass can be taken out from precision die, and coated in this case elastomer layer can not change shape owing to it is mobile.
If the layer system that sheet glass and elastomer (partly solidified) constitute needs the long period to preserve,, bear below 50 ℃ can it being cooled on this device just with in its device of packing into.This device has blanket of nitrogen in this case, to avoid the humidity condensed of frosting form.
But layer system also can use immediately.The wafer that for this reason will introduce before this is placed on the chuck in the connector of the EVG of Austrian manufacturer
Figure G2007800071946D0022151118QIETU
together with its coated boundary layer like this, makes residing of the boundary layer of its front-just-upwards.With the sheet glass of layer system-just have elastomer coated-be placed on like this on the wafer surface, elastomer layer is contacted with boundary layer subsequently.Seal connector now, and wafer with boundary layer and the present residing chamber of sheet glass with elastomer layer are vacuumized by pump.After reaching enough vacuum, now wafer and layer system are pushed by two chucks.Producing elastomer like this is connected with the no bubble shape of wafer surface.The flange of wafer is surrounded by partial cross-linked elastomeric material at this fully.Through two chucks with wafer and carrier extruding are heated to 165 ℃, elastomer is crosslinked fully (curing) in 5 minutes.
Can wafer-carrier be arranged now and from connector, take out.Plane parallel property assurance wafer through connector has the thickness error below the 10 μ m together with its carrier.
Now wafer-carrier is arranged in the grinder of packing into and, made wafer have the residual thickness of 50 μ m the scope of freedom (back side) of wafer wear down to a certain extent.
Be to eliminate the defective that occurs on the chip back surface during the process of lapping, the wafer of attenuate is placed in the vacuum chamber together with the carrier layer system, in this vacuum chamber, corrode, to remove the damage on surface by the abradant surface of plasma to wafer.In this case advantageously, wafer-carrier is arranged in processing temperature and its part that this short time bears up to 300 ℃ was not having big difference aspect its hot expansibility.
Subsequently wafer is placed in the vacuum chamber and on its scope of freedom and metallize.
From the purpose that the LED reverse mounting type with back face metalization separates with boundary layer, go up the DU099D type saw film that applies the Advantek of manufacturer by laminating roll overleaf.This saw film is fixed on its crowning.The scope of freedom of sheet glass is also fixed by vacuum draw simultaneously.The stiff end of saw film is now around the guide roller guiding.At the diameter of this guide roller diameter greater than such roller, on said roller LED reverse mounting type can be owing to bending overload breakage.
LED reverse mounting type separates with boundary layer thus, and wherein, boundary layer is retained on the face of sheet glass.
Wafer surface is now by solvent such as actinon and purification of water.
Saw film (second carrier layer) stretches tight by framework now and can arrive checkout gear together with the wafer transport of lamination.After wafer and parts thereof are by the contact pilotage electrical testing, wafer is become its parts by separating abrasive cut-off saw on saw device.After this wafer that cuts is positioned on the saw film.Swelling film utilizes the exposure of UV light to reduce the attachment characteristic of film like this with the while by film, and single parts can be shifted out by winning automatically with apparatus for placing.

Claims (29)

1. wafer-carrier device, said device comprises:
-wafer (1),
-carrier layer system (5,6) and
-be arranged on the boundary layer (4) between carrier layer system (5,6) and the wafer (1),
Wherein, carrier layer system (5,6) comprises
(i) carrier layer (6) and
(ii) said boundary layer side by solidify, partly solidified or layer (5) that the curable elastomer material constitutes,
Perhaps form by these two layers, and
Wherein, boundary layer (4) does
(iii) plasma polymer layer and
(iv) the adhesive strength between carrier layer system (5,6) and the boundary layer (4) after said elastomeric material solidifies greater than the adhesive strength between wafer (1) and the boundary layer (4).
2. according to the wafer-carrier device of claim 1, said device separates in said wafer back to comprise on the face of interlayer (4) and connects material layer and second carrier layer (17).
3. according to the wafer-carrier device of claim 1 or 2, wherein said elastomeric material is partly solidified.
4. according to the wafer-carrier device of claim 1 or 2, wherein said elastomeric material has the Shore-A hardness that is starkly lower than under the solid state and/or under solid state, is having 15～78 Shore-A hardness under the partly solidified state.
5. according to the wafer-carrier device of claim 1 or 2, wherein said elastomeric material is made on the polysiloxanes basis.
6. according to the wafer-carrier device of claim 1 or 2, wherein carrier layer (6) is polyimides or aramid layer, glassy layer or silicon layer.
7. according to the wafer-carrier device of claim 1 or 2, wherein, the thermal coefficient of expansion of carrier layer (6) linear expansion and the thermal coefficient of expansion of wafer (1) differ maximum 10*10 -6/ ℃.
8. according to the wafer-carrier device of claim 2, wherein, second carrier layer (17) is a film.
9. according to the wafer-carrier device of claim 2, wherein, flexible greater than carrier layer (16) of second carrier layer (17) flexible.
10. according to the wafer-carrier device of claim 2, wherein, second carrier layer (17) is for by one deck or the film that constitutes of multilayer PP, PE, PET and/or other plastics more.
11. according to the wafer-carrier device of claim 2, wherein said connection material layer comprises following material or is made up of this material, said material reduces or disappearance under the effect of radiation and/or heat the adhesive force of wafer.
12. according to the wafer-carrier device of claim 1 or 2, wherein, layer (5) that carrier layer (6) and/or said elastomeric material constitute and/or second carrier layer (17) be formation like this, makes them can the static loading and/or can be fixed by the face of static loading.
13. one kind is used for according to claim 1～6 and 12 each the layer systems of wafer-carrier device, said layer system comprises
(i) carrier layer (6),
(ii) by solidify, partly solidified or layer (5) that the curable elastomer material constitutes and
(iii) deviate from the plasma polymer boundary layer (4) on the face of said carrier layer at the layer that elastomeric material constitutes.
14. according to the layer system of claim 13, said layer system is included in the diaphragm of taking off (9) on the face that said plasma polymer boundary layer (4) deviates from carrier layer (6).
15. according to claim 13 or 14 described layer systems, wherein, diaphragm (9) is film that is made up of PP, PE, PET and/or other plastics or the paper that utilizes silicone-coated.
16. the layer (5) that constitutes by the elastomeric material that solidifies and the boundary layer (4) of plasma polymer and/or according in the claim 13～15 each layer system and/or according to each the purposes of wafer-carrier device when processed wafer (1) back side in the claim 1,3～7 and 12.
17. purposes according to claim 16 is used for the attenuate of wafer (1) and/or cuts apart.
18. making according to the purposes during each wafer-carrier device in the claim 1～12 according to each layer system in the claim 13～15.
19. one kind is used for making according to each the method for layer system of claim 13～15, said method comprising the steps of:
A) formation of carrier layer (6),
B) formation of the layer (5) of curable elastomer material formation,
C) will be at step a) and b) in the layer that produces be connected,
Solidify the layer (5) that perhaps partly solidified said curable elastomer material constitutes when d) needing,
When e) needing the layer (5) that said elastomeric material constitutes deviate from the face of carrier layer (6) deposition plasma polymer boundary layer (4) and
The diaphragm that can take off when f) needing (9) is applied on the face that layer (5) that said elastomeric material constitutes deviates from carrier layer (6) perhaps, and said plasma polymer boundary layer (4) deviates from the face of carrier layer (6).
20. method according to claim 19, wherein step c) and step a) or b) carry out simultaneously.
21. one kind is used for making according to claim 1,3～7 and 12 each the methods of wafer-carrier device, said method comprising the steps of:
A) wafer (1) is provided,
B) provide according to each layer system in the claim 13～15; Wherein, if the layer system that is provided comprises plasma polymer boundary layer (4), this boundary layer (4) constitutes like this; Make between carrier layer system (5,6) and the boundary layer (4) adhesive strength carrier layer system (5,6) be connected with wafer (1) and elastomeric material solidify after greater than the adhesive strength between wafer (1) and the boundary layer (4); Wherein, said connection is facilitated through boundary layer (4)
Take diaphragm (9) off from layer system when c) needing,
D) if the layer system that is provided does not comprise plasma polymer boundary layer (4); So this layer (4) is deposited on the layer (5) of wafer (1) or elastomeric material formation; Thereby the adhesive strength between carrier layer system (5,6) and the boundary layer (4) carrier layer system (5,6) be connected with wafer (1) and elastomeric material solidify after greater than the adhesive strength between wafer (1) and the boundary layer (4); Wherein said connection is facilitated through boundary layer (4)
E) wafer that utilizes when needing plasma polymer boundary layer (4) to apply said layer system is connected, and
F) curing of elastomeric material.
22. a method that is used for processed wafer (1) back side said method comprising the steps of:
A) make according to each wafer-carrier device in the claim 1,3～7 and 12, wherein said layer system is applied to the front of wafer (1), and
B) back side of processed wafer (1).
23. according to the method for claim 22, wherein, in step b) with the thinning back side of wafer (1).
24. according to the method for claim 22, wherein,, on the back side of wafer (1), apply and connect material layer and second carrier layer (17), thereby produce according to each wafer-carrier device in the claim 2～11 as the step c) after the step b).
25. according to each method in the claim 22～24, wherein, as after the step b) when needing the step d) after step c), carry out separating between wafer (1) and the plasma polymer boundary layer (4).
26. according to the method for claim 25, wherein said separation is mechanically carried out.
27., wherein, then wafer (1) is separated under the situation that changes the connection material layer with being connected when needing between the material layer as step e) according to the method for claim 25.
28. according to the method for claim 27, wherein said being separated under the situation of using UV radiation and/or heat energy carried out.
29., wherein, before step c) and/or before the step e), wafer (1) is cut apart according to the method for claim 25.
CN2007800071946A 2006-03-01 2007-03-01 Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement Active CN101395703B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE200610009394 DE102006009394A1 (en) 2006-03-01 2006-03-01 Wafer treatment involves presenting components during thinning of wafer, separation of components and intermediate production steps, where front of wafer is coated with layer or layer system comprising interface and carrier layer
DE102006009353.4 2006-03-01
DE102006009394.1 2006-03-01
DE200610009353 DE102006009353A1 (en) 2006-03-01 2006-03-01 Wafer treatment, involves coating front side of wafer with layer with separation properties and carrier layer, where carrier layer exhibits electrostatic properties and includes elastomer layer or hard layer of polyimide
DE102006048799.0A DE102006048799B4 (en) 2006-10-16 2006-10-16 Method and device for detaching a thin wafer or already separated components of a thin wafer from a carrier
DE102006048800.8 2006-10-16
DE102006048799.0 2006-10-16
DE102006048800.8A DE102006048800B4 (en) 2006-10-16 2006-10-16 Hard carrier multilayer system for supporting thin wafers in semiconductor fabrication
PCT/EP2007/051952 WO2007099146A1 (en) 2006-03-01 2007-03-01 Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement

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DE102006048800B4 (en) 2006-10-16 2018-12-13 Nissan Chemical Industries, Ltd. Hard carrier multilayer system for supporting thin wafers in semiconductor fabrication
DE102010045035A1 (en) * 2010-09-10 2012-03-15 Siemens Aktiengesellschaft Encapsulation and manufacture of an encapsulated assembled printed circuit board
JP2012064710A (en) * 2010-09-15 2012-03-29 Asahi Glass Co Ltd Manufacturing method of semiconductor element
DE102014219095A1 (en) * 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. The wafer carrier assembly
CN113257722B (en) * 2021-06-29 2021-09-28 深圳中科四合科技有限公司 Chip film-pouring method and chip film-pouring equipment

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CN1668715A (en) * 2002-07-15 2005-09-14 陶氏康宁东丽硅氧烷株式会社 Silicone-based adhesive sheet, method of bonding a semiconductor chip to a chip attachment component, and a semiconductor device

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