CN101394081A - Electro-static discharge protection design with low capacitance - Google Patents
Electro-static discharge protection design with low capacitance Download PDFInfo
- Publication number
- CN101394081A CN101394081A CNA2007101543081A CN200710154308A CN101394081A CN 101394081 A CN101394081 A CN 101394081A CN A2007101543081 A CNA2007101543081 A CN A2007101543081A CN 200710154308 A CN200710154308 A CN 200710154308A CN 101394081 A CN101394081 A CN 101394081A
- Authority
- CN
- China
- Prior art keywords
- voltage source
- electrostatic discharge
- protection circuit
- low capacitance
- esd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000013461 design Methods 0.000 title claims abstract description 7
- 230000003068 static effect Effects 0.000 claims description 51
- 238000012360 testing method Methods 0.000 claims description 26
- 230000001012 protector Effects 0.000 claims description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 206010003497 Asphyxia Diseases 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 abstract description 9
- 238000003466 welding Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A low-capacitance electrostatic discharge protective circuit adopts the design for protection against low-capacitance electrostatic discharge and comprises an electrostatic discharge detection circuit and an electrostatic discharge protective element, wherein the electrostatic discharge detection circuit is connected between a first voltage source and a second voltage source and is used for detecting an electrostatic discharge voltage to generate a triggering signal; the electrostatic discharge protective element is provided with one end connected with either the first voltage source or the second voltage source, and the other end connected with an input welding spot; and the electrostatic discharge protective element carries out electrostatic discharge protection according to the triggering signal.
Description
Technical field
The present invention is relevant for the low capacitance ESD-protection circuit, is particularly to the electrostatic discharge (ESD) protection testing circuit is arranged at low capacitance ESD-protection circuit between VDD and the VSS.
Background technology
Usually, integrated circuit needs electrostatic discharge (ESD) protection (electrostatic discharge, the ESD) protection of circuit, the static discharge voltage destruction of coming to avoid internal circuit configuration to be dashed forward.Fig. 1 represents the circuit diagram of the ESD protection circuit 100 of known technology.As shown in Figure 1, ESD protection circuit 100 comprises one first electric static discharge protector 101, one second electric static discharge protector 103, a resistive element 105.First electric static discharge protector 101 and second electric static discharge protector 103 can utilize metal oxide semiconductor transistor, diode or thyristor usually, and (SiliconControlled.Rectifier SCR) waits enforcement.ESD protection circuit 100 is connected in a connection welding 107 and an internal circuit 109, flow to internal circuit 109 in order to prevent static discharge current from connection welding 107.Generally speaking; can be led from first electric static discharge protector 101 or second electric static discharge protector 103 from the static discharge voltage that connection welding 107 enters; yet if resistance 105 too hour electric current can flow through resistance 105 and enter internal circuit 109; and then cause the damage of internal circuit 109; otherwise if resistance 105 is too big; though internal circuit 109 can be more protected, also cause the circuit delay increase to be difficult for the problem of high speed operation simultaneously.
Except above-mentioned shortcoming, along with the progress of circuit design, original ESD protection circuit can't provide appropriate protection, and therefore new ESD protection circuit constantly development comes out.Fig. 2 represents the circuit diagram of the ESD protection circuit 200 of another known technology, and it is disclosed in the patent of U.S. Patent Publication No. US 2003/0042498.As shown in Figure 2; ESD protection circuit 200 comprises an electrostatic discharge testing circuit 201; it is connected to an input solder joint 203 and an internal circuit 205; whether there is a static discharge voltage to produce in order to detect, makes electric static discharge protector 207 conductings so that static discharge voltage is got rid of if the words that have then produce a triggering signal (voltage or electric current).In this example, electric static discharge protector 207 comprises a N type metal oxide semiconductor 211 and a thyristor 213.Other of ESD protection circuit 200 action in detail have been disclosed in the above-mentioned United States Patent (USP) with structure, so do not repeat them here.
Yet as shown in Figure 2, electrostatic discharge testing circuit 201 has an electric capacity 209, and N type metal oxide semiconductor 211 also can have a capacitor C.Therefore can influence from the signal quality of input solder joint 203 inputs, and such situation is obvious especially at the circuit of high-speed transfer.
Summary of the invention
Therefore, the present invention proposes a kind of ESD protection circuit, and it places between VDD and the VSS electrostatic discharge testing circuit to reduce parasitic capacitance.
Embodiments of the invention provide a kind of ESD protection circuit, and it comprises: an electrostatic discharge testing circuit, be connected between one first voltage source and one second voltage source, and be used for detecting a static discharge voltage to produce a triggering signal; And an electric static discharge protector, have an end connect first voltage source and second voltage source one of them, and the other end connects an input solder joint, electric static discharge protector carries out electrostatic discharge (ESD) protection according to triggering signal.This ESD protection circuit can also comprise a static discharge strangulation element, is connected in first voltage source, second voltage source and electrostatic discharge testing circuit, is used for moving according to triggering signal.
By above-mentioned circuit, can reduce of the influence of the parasitic capacitance of electrostatic discharge testing circuit to input solder joint input signal, make this circuit can be applicable to the high speed input/output interface circuit.
Description of drawings
Fig. 1 represents the circuit diagram of the ESD protection circuit 100 of known technology.
Fig. 2 represents the circuit diagram of the ESD protection circuit 200 of known technology.
Fig. 3 represents the circuit diagram according to the low capacitance ESD-protection circuit of first preferred embodiment of the present invention.
Fig. 4 represents the details drawing of low capacitance ESD-protection circuit shown in Figure 3.
Fig. 5 represents the circuit diagram according to the low capacitance ESD-protection circuit of second preferred embodiment of the present invention.
Fig. 6 represents the circuit diagram according to the low capacitance ESD-protection circuit of the 3rd preferred embodiment of the present invention.
The main element symbol description
100,200 ESD protection circuits
300,600 low capacitance ESD-protection circuit
101 first electric static discharge protectors
103 second electric static discharge protectors
105 resistive elements
107,203,309 input solder joints
109,205,311 internal circuits
201,301,503,605 electrostatic discharge testing circuits
207 electric static discharge protectors
209 electric capacity
211 N type metal oxide semiconductors
213 thyristors
303 static discharge strangulation elements
305,503 P type thyristors
307,603 diodes
401 P type metal oxide semiconductor transistors
403 N type metal oxide semiconductor transistors
405 resistance
407 electric capacity
501,601 N type thyristors
Embodiment
In the middle of specification and claim, used some vocabulary to censure specific element.The person with usual knowledge in their respective areas should understand, and hardware manufacturer may be called same element with different nouns.This specification and claims are not used as distinguishing the mode of element with the difference of title, but the criterion that is used as distinguishing with the difference of element on function.Be an open term mentioned " comprising " in the middle of specification and the follow-up request in the whole text, so should be construed to " comprise but be not limited to ".In addition, " connection " speech comprises any indirect means that are electrically connected that directly reach at this.Therefore, be connected in one second device, then represent this first device can directly be electrically connected in this second device, or be electrically connected to this second device indirectly through other devices or connection means if describe one first device in the literary composition.
Fig. 3 represents the circuit diagram according to the low capacitance ESD-protection circuit 300 of first preferred embodiment of the present invention, and it uses the electrostatic discharge (ESD) protection design of low electric capacity.As shown in Figure 3, low capacitance ESD-protection circuit 300 comprises an electrostatic discharge testing circuit 301, a static discharge strangulation element 303, a P type thyristor 305 and a diode 307, flows into internal circuit 311 in order to prevent static discharge current.Electrostatic discharge testing circuit 301 is connected to one first voltage source V DD and one second voltage source V SS, is used for detecting a static discharge voltage when taking place (that is a static discharge phenomenon) to produce a triggering signal Strig.P type thyristor 305 carries out electrostatic discharge (ESD) protection (that is deriving static discharge current) according to triggering signal Strig, and triggering signal Strig is a trigger current in this embodiment, in order to control P type thyristor 305.Yet P type thyristor 305 can also replace by other electric static discharge protectors, if P type thyristor 305 is other electric static discharge protectors, triggering signal Strig is not defined as trigger current.In the present embodiment, also in order to get rid of the static discharge current that static discharge voltage produced, also the triggering signal Strig by electrostatic discharge testing circuit 301 is controlled static discharge strangulation element 303.
The detailed action of low capacitance ESD-protection circuit 300 can be as described below: when an electrostatic discharge event takes place; and input solder joint 309 relative second voltage source V ss are when being a positive voltage; static discharge current is entered and via diode 307 to first voltage source V DD by input solder joint 309; flow into static discharge strangulation elements 303 (that is produce a triggering signal Strig give static discharge strangulation element 303) via electrostatic discharge testing circuit 301 again, and carry static discharge current simultaneously to P type thyristor 305 (that is produce a triggering signal Strig give P type thyristor 305) by electrostatic discharge testing circuit 301 by electrostatic discharge testing circuit 301.Static discharge strangulation this moment element 303 is able to conducting to get rid of the static discharge current by first voltage source V DD to the second voltage source V SS effectively, the static discharge current that P type thyristor 305 then utilizes electrostatic discharge testing circuit 301 to carry has reduced the required trigger voltage of conducting and has quickened conducting speed, more effectively to get rid of the static discharge current by input solder joint 309 to second voltage source V SS.
Fig. 4 represents the details drawing of low capacitance ESD-protection circuit shown in Figure 3, and it uses the electrostatic discharge (ESD) protection design of low electric capacity.In this example, static discharge strangulation element 303 is a P type thyristor, and therefore the triggering signal Strig in order to control static discharge strangulation element 303 also is a trigger current.And electrostatic discharge testing circuit 301 comprises a P-type mos transistor 401, a N type metal oxide semiconductor transistor 403, a resistance 405 and an electric capacity 407.The source electrode of P-type mos transistor 401 is connected in the first voltage source V DD.The source electrode of N type metal oxide semiconductor transistor 403 is connected in the second voltage source V SS, and its grid is connected in the grid of P-type mos transistor 401.One end of resistance 405 is connected in the first voltage source V DD, and the other end is connected in the grid of P-type mos transistor 401 and N type metal oxide semiconductor transistor 403.Electric capacity 407 one ends are connected in the second voltage source V SS, and the other end is connected in the grid of P-type mos transistor 401 and N type metal oxide semiconductor transistor 403.It is noted that structure shown in Figure 4 in order to for example, is not that other structures that can realize identical function also should be included within the present invention in order to qualification the present invention only.
Except electrostatic discharge protective circuit shown in Figure 3 300, can also other modes present according to electrostatic discharge protective circuit of the present invention.For instance, the diode 307 in the electrostatic discharge protective circuit 300 shown in Figure 3 replaces with a N type thyristor 501 as can be as shown in Figure 5.In this example, the triggering signal Strig (trigger current) that P type thyristor 503 and N type thyristor 501 are all electrostatic discharge testing circuit 505 controls.
Perhaps, the structure that electrostatic discharge protective circuit of the present invention can also be shown in Figure 6 realizes that as shown in Figure 6, electrostatic discharge protective circuit 600 has a N type thyristor 601 and a diode 603.N type thyristor 601 is connected to the first voltage source V DD and input solder joint 602, and it is the conducting by triggering signal Strig that testing circuit 605 produced also.Diode 603 is connected between the input solder joint 602 and the second voltage source V SS.The manner of execution of Fig. 5 and Fig. 6 can be pushed away easily by the description of Fig. 3, so do not repeat them here.
It is noted that; though above-mentionedly all explain with P type or N type thyristor; but be not in order to limiting the present invention, other can all can be used in the present invention by electric static discharge protector that electrostatic discharge testing circuit controls such as metal oxide semiconductcor field effect transistor etc.In addition, because static discharge strangulation element is not a necessary element of the present invention in order to assist getting rid of static discharge current, therefore also can not comprise static discharge strangulation element according to low capacitance ESD-protection circuit of the present invention.
According to above-mentioned circuit, because electrostatic discharge testing circuit is moved between VDD and the VSS between input solder joint and VSS.Therefore can reduce of the influence of the parasitic capacitance of electrostatic discharge testing circuit, make electrostatic discharge testing circuit according to the present invention possess the low parasitic capacitance characteristic, can be applicable to the high speed input/output interface circuit input solder joint input signal.And, owing to electrostatic discharge testing circuit is removed between input solder joint and VSS, so can save the usable floor area of chip.
And, if when using thyristor,, therefore can not be subjected to the influence of traditional cmos processing procedure bolt-lock effect (Latch-up) because of correlation technique quite ripe (for example 0.13 or more advanced CMOS processing procedure) as electric static discharge protector.And, therefore because the low voltage (Holding Voltage) of keeping of thyristor has been higher than the minimum voltage in the chip operation, will no longer be subjected to the effect of bolt-lock and influence the operate as normal of whole chip.Be more preferably, if use P type thyristor, its tolerance level comes goodly than diode, and parasitic capacitance is lower than diode.
The above only is preferred embodiment of the present invention, and all equivalences of being carried out according to the present patent application claim change and revise, and all should belong to covering scope of the present invention.
Claims (8)
1. low capacitance ESD-protection circuit, the electrostatic discharge (ESD) protection design that it uses low electric capacity comprises:
One electrostatic discharge testing circuit is connected between one first voltage source and one second voltage source, is used for detecting a static discharge voltage to produce a triggering signal; And
One electric static discharge protector, have an end connect this first voltage source and this second voltage source one of them, and the other end connects an input solder joint, this electric static discharge protector carries out electrostatic discharge (ESD) protection according to this triggering signal.
2. low capacitance ESD-protection circuit as claimed in claim 1, wherein this electric static discharge protector is a thyristor.
3. low capacitance ESD-protection circuit as claimed in claim 2; wherein this thyristor is a P type thyristor; the one end is connected in this second voltage source, and this low capacitance ESD-protection circuit also comprises a diode and is connected between this first voltage source and this P type thyristor.
4. low capacitance ESD-protection circuit as claimed in claim 2; wherein this thyristor is a P type thyristor; the one end is connected in this second voltage source, and this low capacitance ESD-protection circuit also comprises a N type thyristor and is connected between this first voltage source and this P type thyristor.
5. low capacitance ESD-protection circuit as claimed in claim 2; wherein this thyristor is a N type thyristor; the one end is connected in this first voltage source, and this low capacitance ESD-protection circuit also comprises a diode and is connected between this second voltage source and this N type thyristor.
6. low capacitance ESD-protection circuit as claimed in claim 1, it also includes:
One static discharge strangulation element is connected in this first voltage source, this second voltage source and this electrostatic discharge testing circuit, is used for according to this triggering signal action.
7. low capacitance ESD-protection circuit as claimed in claim 1, wherein this electrostatic discharge testing circuit comprises:
One P-type mos transistor, its source electrode are connected in this first voltage source;
One N type metal oxide semiconductor transistor, its source electrode is connected in this second voltage source, and its grid is connected in the transistorized grid of this P-type mos;
One resistance, one end are connected in this first voltage source, and the other end is connected in this P-type mos transistor and the transistorized grid of this N type metal oxide semiconductor; And
One electric capacity, one end are connected in this second voltage source, and the other end is connected in this P-type mos transistor and the transistorized grid of this N type metal oxide semiconductor.
8. low capacitance ESD-protection circuit as claimed in claim 1, wherein this triggering signal is a trigger current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101543081A CN101394081A (en) | 2007-09-17 | 2007-09-17 | Electro-static discharge protection design with low capacitance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101543081A CN101394081A (en) | 2007-09-17 | 2007-09-17 | Electro-static discharge protection design with low capacitance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101394081A true CN101394081A (en) | 2009-03-25 |
Family
ID=40494223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101543081A Pending CN101394081A (en) | 2007-09-17 | 2007-09-17 | Electro-static discharge protection design with low capacitance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101394081A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593805A (en) * | 2011-01-14 | 2012-07-18 | 快捷半导体(苏州)有限公司 | ESD protection against charge coupling |
| CN103683235A (en) * | 2012-09-24 | 2014-03-26 | 上海华虹宏力半导体制造有限公司 | Electrostatic discharge self-protection circuit |
| CN113921516A (en) * | 2021-09-17 | 2022-01-11 | 杭州傲芯科技有限公司 | Electrostatic discharge protection module and device using same |
-
2007
- 2007-09-17 CN CNA2007101543081A patent/CN101394081A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593805A (en) * | 2011-01-14 | 2012-07-18 | 快捷半导体(苏州)有限公司 | ESD protection against charge coupling |
| CN103683235A (en) * | 2012-09-24 | 2014-03-26 | 上海华虹宏力半导体制造有限公司 | Electrostatic discharge self-protection circuit |
| CN113921516A (en) * | 2021-09-17 | 2022-01-11 | 杭州傲芯科技有限公司 | Electrostatic discharge protection module and device using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7087938B2 (en) | ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuit | |
| US7274546B2 (en) | Apparatus and method for improved triggering and leakage current control of ESD clamping devices | |
| JP4651044B2 (en) | Circuit apparatus and method for protecting integrated semiconductor circuits | |
| KR100849069B1 (en) | Electro static discharge device | |
| US6690557B2 (en) | CMOS whole chip low capacitance ESD protection circuit | |
| US8315024B2 (en) | Electrostatic discharge protection circuit, integrated circuit and method of protecting circuitry from an electrostatic discharge voltage | |
| US6867957B1 (en) | Stacked-NMOS-triggered SCR device for ESD-protection | |
| US7289307B2 (en) | High voltage ESD circuit by using low-voltage device with substrate-trigger and gate-driven technique | |
| US8830640B2 (en) | Electrostatic discharge protection circuit | |
| US6912109B1 (en) | Power-rail ESD clamp circuits with well-triggered PMOS | |
| US20150245546A1 (en) | Electrostatic discharge protection circuit | |
| US20090195951A1 (en) | Method and Apparatus for Improved Electrostatic Discharge Protection | |
| KR101039856B1 (en) | A circuit for electrostatic to discharge | |
| US20090135534A1 (en) | Semiconductor integrated circuit | |
| CN1998120A (en) | Method and apparatus for providing current controlled electrostatic discharge protection | |
| KR20060122813A (en) | Electrostatic discharge protection circuit and method of operation | |
| US10181721B2 (en) | Area-efficient active-FET ESD protection circuit | |
| US20070297105A1 (en) | Active ESD Protection | |
| US10158225B2 (en) | ESD protection system utilizing gate-floating scheme and control circuit thereof | |
| US20090086393A1 (en) | Electrostatic discharge protection circuit for protecting semiconductor device | |
| US20070236842A1 (en) | Electrostatic discharge protection circuit | |
| US7855862B1 (en) | Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path | |
| WO2006033993A1 (en) | Apparatus for esd protection | |
| US10454269B2 (en) | Dynamically triggered electrostatic discharge cell | |
| US7675722B2 (en) | Device to protect semiconductor device from electrostatic discharge |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090325 |