CN101393971B - Novel light emitting transistor and manufacturing method thereof - Google Patents
Novel light emitting transistor and manufacturing method thereof Download PDFInfo
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- CN101393971B CN101393971B CN2008102019859A CN200810201985A CN101393971B CN 101393971 B CN101393971 B CN 101393971B CN 2008102019859 A CN2008102019859 A CN 2008102019859A CN 200810201985 A CN200810201985 A CN 200810201985A CN 101393971 B CN101393971 B CN 101393971B
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- emitting transistor
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Abstract
The invention relates to a novel light emitting triode and a preparation method thereof. The triode is prepared by the following steps: a channel is formed on the anode of an organic electroluminescence diode by utilizing the photoetching technique, two source electrodes and one drain electrode are formed, and the unchanged cathode is taken as the grid electrode, wherein the length of the channelis 5 microns-30 microns. The triode has the FET characteristics of current modulation and the OLED characteristics of electro-optical conversion.
Description
Technical field
The present invention relates to a kind of new light emitting transistor and preparation method thereof.
Background technology
In recent years, the organic semiconductor luminescent device is widely used in led lighting, flat-panel monitor and and light activated organic film laser field owing to have high brightness, fast deferred reaction, high contrast and make characteristics such as simple.Utilize organic film or monocrystalline, aphthacene or 5,6,11 for example, the organic field that 12-tetraphenyl aphthacene is made is potent answer triode (FETs) also to have very important use is worth.And Hepp (2003), Ahles (2004), Rost (2004), Oyamada (2005) and Nakamura (2005) etc. had reported the emitting, electroluminescent diode (OLED) that Weimer triode (TFT) drives, and the organic light emission triode.Because triode can utilize the amount and the kind of the 3rd electrode control iunjected charge, and utilizes light emitting transistor can make the drive circuit of display simpler, light emitting transistor has become an important research direction in the luminous field of high-performance.
But, as Okumoto (2000) report because light emitting transistor is luminous mainly along the edge direction conduction of film or crystal, luminous intensity relatively a little less than, spectrum is difficult to be observed.
Summary of the invention
One of purpose of the present invention is to overcome the problem that the light emitting transistor luminous intensity is not strong and spectrum is difficult to observe that exists in the prior art, and a kind of new light emitting transistor is provided.
Two of purpose of the present invention is to provide the preparation method of this triode.This method is to form a very narrow raceway groove by photoetching technique (wet etching) on the anode of electroluminescent diode, constitutes a kind of structure that is similar to triode, referring to Fig. 1.
For achieving the above object, the present invention adopts following technical scheme:
A kind of light emitting transistor, with the organic electroluminescent LED is template, it is characterized in that this triode is to adopt photoetching technique to produce a raceway groove on the anode of organic electroluminescent LED, form a source and a drain electrode, the length of this raceway groove is 5 microns～30 microns; In source and drain electrode, cover organic matter layer; The negative electrode of Gai Donging is not as grid, and this negative electrode is a metal electrode; The length of this raceway groove is 5 microns～30 microns.
A kind of method for preparing above-mentioned light emitting transistor is characterized in that steps of the method are:
A) utilizing electron-beam lithography to form a length on the non-blooming glass substrate of cleaning is 5 microns～30 microns pattern, then, coat EB resist above, be ZEP520A, re-use thermal evaporation and plate the thick LiF of 400nm-600nm, next, use opaque Metal Cr to be plated in above the substrate, LiF is peeled off ultrasonic Treatment 30-60 minute with hot water; At last, use this Metal Cr pattern of finishing as mask plate, be placed on the substrate of the ITO pattern that scribbles sensitising agent, use UV light exposure 20-30 second, cleaned 35 minutes with etching liquid at last, length of formation is 5 microns～30 microns raceway groove on ITO;
B) adopt routine techniques on the anode of step a preparation, to cover organic matter layer and metal electrode, thereby form new light emitting transistor.
The present invention is a template with the organic electroluminescent LED, on anode, make one long be micron-sized raceway groove, form two sources and drain electrode, the negative electrode of Gai Donging is not as grid.Under the situation that the voltage seal adds, cause electric current when vertical direction flows, also flowing at transverse direction.By changing the length of raceway groove, can adjust the density of transverse current.High-intensity transverse current can cause luminous FET.In addition, this raceway groove position can not exert an influence to Devices Characteristics.
Triode of the present invention is a diode with FET characteristic, and it overcomes the light that exists in existing three offices in edge-emission with in the shortcoming of metal electrode delustring.Cause diode with the luminous electricity of TFT driving in addition and compare, triode of the present invention promptly has the FET characteristic that electric current modifies tone, and also has the OLED characteristic of electric light conversion simultaneously.
Description of drawings
Fig. 1 is the structural representation of triode of the present invention.
Fig. 2 is the I of triode of the present invention
D-and I
G-V
DChange curve, raceway groove length are 30 microns.
Fig. 3 is the electric modified tone characteristic of triode of the present invention,
Fig. 4 is the I of triode of the present invention with changes in channel length
D-V
DCurve
Embodiment
The present invention uses 150nm Mg/Ag alloy as gate electrode 4, and 150nm ITO is as source 1,2 and drain 3, and referring to Fig. 1, the l among the figure represents the length of raceway groove, and its length is 5 microns-30 microns.Its concrete preparation method is: at first utilize electron-beam lithography to form one 5 microns-30 microns pattern on the non-blooming glass substrate of cleaning, then, coat EB resist (ZEP520A) above, re-use thermal evaporation and plate the thick LiF of 400nm-600, next, use opaque Metal Cr to be plated in above the substrate, LiF is peeled off (liftoffed), ultrasonic Treatment 30-60 branch with hot water.At last, use this Metal Cr pattern of finishing, be placed on the substrate of the ITO pattern that scribbles sensitising agent as mask plate, use UV light exposure 20-30 second, cleaned 35 minutes with etching liquid at last, form the pattern that very thin space is arranged on ITO, constitute two sources 1,2 and drain 3.
Utilize the vacuum vapor plating system on transparency electrode, to form organic substance and metal electrode 4, make above-mentioned device.Device uses 200-300nm tris[2-naphthyl (phenyl) amino] triphenylamine (2-TNATA) (also can use other organic material as the implanted layer in hole, perhaps oxide such as ZnO), 4 of 50-100nm, 4 '-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB) is as hole transport layer, 30-60nmtris (8-hydroxyquinoline) aluminum (Alq3) is as luminescent layer (perhaps 4,4 '-Bis-(2,2-diphenyl-vinyl)-biphenyl (DPVBi, λ=461nm), 1,3-bis[2-(4 '-terbutylphenyl)-1,3,4-oxadiazol-5-yl] benzene (OXD7, λ=380nm), Poly (9,9-dioctyllfluoren-2,7-diyl (PFO, λ=436nm) etc.), and the bathocuproine of 5-10nm is as hole blocking layer, and 50-100nm2,5-bis (6 '-(2 ', 2 " bipyridyl))-1; 1-dimethyl-3,4-diphenylsilole is as the electronics transport layer.
Embodiment one: the studying of organic molecule OLED with field effect.ITO thickness is 150nm, use 250nm 2-TNATA (perhaps CuPC) as the implanted layer in hole and the active layer of TFT, 4 of 50nm, 4 '-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB) is as hole transport layer, 60nmtris (8-hydroxyquinoline) aluminum (Alq3) is as luminescent layer, and 10nm bathocuproine is as hole blocking layer.Channel length L (see figure 1) is respectively 5 microns, 15 microns and 30 microns.
Embodiment two: the studying of macromolecule PLED with field effect.ITO thickness is 150nm, utilizes the solution lacquering technique to prepare macromolecule that pentacene etc. has high mobility on ITO, and thickness is 200nm.Then, preparation luminescent layer MEH-PPV 150nm and electrode material.Channel length L (see figure 1) is respectively 5 microns, 15 microns and 30 microns.
The photoelectric characteristic analysis of invention device
Referring to Fig. 2, Fig. 2 is the I of 30 microns triode for raceway groove length
DAnd I
GAlong with V
DVariation.For an OLED, when low-voltage ohmic contact between electrode and the organic layer, when high voltage the tunnel contact.As negative V
DWhen higher, I
G-V
DI in stable state
GUnder the situation, show different characteristics.Along with the increase of negative grid voltage, since the function of current of source and grid, the I under the stable state
GValue will improve.
When device of the present invention has the OLED characteristic, also has the FET characteristic.Referring to Fig. 3, I when Fig. 3 changes for drain voltage
SRelative variation, transverse axis is a gate voltage.At low-voltage region, can find I
SDepend on V
DAlthough, I
SValue in μ A level.But, when drain voltage is increased to some values, the IS state that will reach capacity, at this moment, device mainly shows as the OLED characteristic.
Key of the present invention is to make the FET configuration luminescent device of a very narrow raceway groove, and raceway groove length is very remarkable to the Effect on Performance of device.With bottom contact FET configuration electroluminescent device is example, and under the long situation of different raceway grooves, channel length is 5,15 and 30 microns, I
D-V
DCharacteristic is different fully.Along with V
DReduction, I
DCurve descends from positive cube and changes negative increase into.This is mainly due to I
DThe sense of current change along with raceway groove length shortens, from along leakage-grid bearing to along the source-the leakage direction.The light-emitting zone of device also can change.In addition, when raceway groove length is 15 microns, work as V
DWhen reaching some values, the I of device
DTurn to negative value from positive value.This critical point can be regarded I as
DReached poised state in vertical and horizontal direction, promptly enter electric current leakage and go out the electric current that leaks equal, referring to Fig. 4.
Claims (2)
1. light emitting transistor, with the organic electroluminescent LED is template, it is characterized in that this triode is to adopt photoetching technique to produce a raceway groove on the anode of organic electroluminescent LED, form a source (1) and a drain electrode (2), the length of this raceway groove (3) is 5 microns～30 microns; (1) and drain electrode (2) are gone up and are covered organic matter layer in the source; The negative electrode of Gai Donging is not as grid (4), and this negative electrode is a metal electrode.
2. method for preparing light emitting transistor according to claim 1 is characterized in that steps of the method are:
A. utilizing electron-beam lithography to form a length on the non-blooming glass substrate of cleaning is 5 microns～30 microns pattern, then, coat electron sensitive resist above, be ZEP520A, re-use thermal evaporation and plate the thick LiF of 400nm-600nm, next, use opaque Metal Cr to be plated in above the substrate, LiF is peeled off ultrasonic Treatment 30-60 minute with hot water; At last, use this Metal Cr pattern of finishing as mask plate, be placed on the substrate of the ITO pattern that scribbles sensitising agent, use UV light exposure 20-30 second, cleaned 35 minutes with etching liquid at last, length of formation is 5 microns～30 microns raceway groove on ITO;
B. adopt routine techniques on the anode of step a preparation, to cover organic matter layer and metal electrode, thereby form light emitting transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102019859A CN101393971B (en) | 2008-10-30 | 2008-10-30 | Novel light emitting transistor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102019859A CN101393971B (en) | 2008-10-30 | 2008-10-30 | Novel light emitting transistor and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101393971A CN101393971A (en) | 2009-03-25 |
| CN101393971B true CN101393971B (en) | 2011-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008102019859A Withdrawn - After Issue CN101393971B (en) | 2008-10-30 | 2008-10-30 | Novel light emitting transistor and manufacturing method thereof |
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| CN (1) | CN101393971B (en) |
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| CN101393971A (en) | 2009-03-25 |
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Effective date of registration: 20140515 Address after: 226600, Jiangsu province Nantong city Haian county old dam Town Industrial Park Patentee after: Nantong Mingxin Microelectronics Co., Ltd. Address before: 200444 Baoshan District Road, Shanghai, No. 99 Patentee before: Shanghai University |
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