CN101393841A - Reaction ionic etching method - Google Patents
Reaction ionic etching method Download PDFInfo
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- CN101393841A CN101393841A CNA2007100462551A CN200710046255A CN101393841A CN 101393841 A CN101393841 A CN 101393841A CN A2007100462551 A CNA2007100462551 A CN A2007100462551A CN 200710046255 A CN200710046255 A CN 200710046255A CN 101393841 A CN101393841 A CN 101393841A
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Abstract
The invention provides a reaction ion etching method. The etching is carried out in a reaction chamber. An electro-static chuck for carrying a wafer is arranged in the reaction chamber. The method includes the following steps: a. an etching gas is introduced into the reaction chamber; b. the radio frequency is applied, and the etching gas forms a plasma under the action of the radio frequency; and c. a direct current high voltage is applied, and the wafer can be firmly attached to the electro-static chuck. The plasma suspending above the wafer is generated under the action of the radio frequency in the step b, and the dust particles in the reaction chamber are accommodated in the plasma. Compared with the prior art, the invention effectively prevents the figure on the surface of the wafer from being covered by the dust particles in the inner wall of the reaction chamber, and effectively reduces the wafer defect rate, thereby improving the yield of wafer etching.
Description
Technical field
The present invention relates to conductor etching technology, relate in particular to a kind of reaction ionic etching method.
Background technology
At present, whole ic manufacturing technology develops towards the direction of high integration, small-feature-size (CD).And etching is one of core process technology of decision characteristic size.
Popular exemplary apparatus is reactive ion etching (RIE-Reactive Ion Etch) system at present, and it has been widely used in the manufacturing of microprocessor (CPU), storage (DRAM) and various logic circuitry.Its classification is divided into dielectric material etching (Dielectric Etch), polysilicon etching (Poly-silicon Etch) and metal etch (Metal Etch) according to etched material.
Typical etch system structure mainly is divided into transport module (Transfer Module), technical module (Process Module) etc.Technical module is the core of whole system, and etch process is just finished in technical module.A board can be with 2-4 technical module, and technical module comprises reaction chamber, vacuum and control pressurer system, radio frequency (RF) system, electrostatic chuck and wafer temperature control system, gas flow control system and etch endpoint detection system etc.Transport module is to finish the transmission of wafer from the wafer cassette to the technical module, guarantees that wafer is placed on the electrostatic chuck center of technical module.Delivery module is sent to the electrostatic chuck center with wafer, open the gas flow control system and charge into etching gas, apply high direct voltage and radio frequency then, make etching gas under action of radio, produce glow discharge to reaction chamber, make etching gas or atom generation ionization, form plasma; Electronegative free electron is little because of quality under the electric field action that radio frequency produced, and movement velocity is fast, very fast arrival negative electrode; Then because quality is big, speed can not arrive negative electrode to cation slowly in the identical time, thereby has formed electronegative sheath layer voltage near making negative electrode.Because the operating air pressure of reaction chamber makes cation obtain very effective acceleration near negative electrode, reach etched purpose simultaneously thereby vertically bombard the wafer that is positioned over cathode surface.
As above-mentioned, prior art is to apply high direct voltage earlier wafer is adsorbed on the electrostatic chuck securely, charges into brilliant back of the body cold gas again, after high direct voltage is stable, adds radio frequency and forms plasma.Yet, when high direct voltage one applies, some residual on reaction chamber inwall micronic dusts will be attached to crystal column surface under the effect of high direct voltage, these micronic dusts can cover the figure that forms by processing procedures such as front developments on the wafer, in etched process, these crystal column surfaces that covered by micronic dust can be not etched, influences the yield of crystal round etching.
Summary of the invention
The object of the present invention is to provide a kind of reaction ionic etching method, it can effectively improve the yield of wafer.
For achieving the above object, the invention provides a kind of reaction ionic etching method, this is etched in the reaction chamber and carries out, and comprises the electrostatic chuck that carries wafer in the reaction chamber; Wherein, this method comprises the steps: that a. charges into etching gas to reaction chamber; B. apply radio frequency, under the effect of radio frequency, etching gas forms plasma; C. apply high direct voltage, the effect of high direct voltage is adsorbed on the electrostatic chuck wafer securely.Action of radio produces and is suspended in wafer top plasma among the step b, and the micronic dust in the reaction chamber is inclusive in the plasma.
Compared with prior art, the present invention has prevented that effectively the figure of crystal column surface from being covered by the micronic dust of reaction chamber inwall, effectively reduces the wafer defect incidence, thereby improved the yield of crystal round etching.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural representation of reactive ion etching system of the present invention.
Embodiment
The present invention mainly provides a kind of new reaction ionic etching method.Be etched in the reaction chamber and carry out, comprise the electrostatic chuck that is provided with the carrying wafer in the reaction chamber, etching is under vacuum state the etching gas that feeds reaction chamber 1 to be applied radio frequency, etching gas is dissociated and on effect etched wafer 5 surfaces of high direct voltage.
At first wafer 5 is sent to electrostatic chuck 3 centers, opens gas flow control system (not shown) and charge into etching gas, apply radio frequency then to reaction chamber 1; At interval certain hour Duan Houzai applies high direct voltage, charges into brilliant back of the body cold gas when high direct voltage applies again after stable, reaches the effect of cool wafers, thus etching gas is dissociated and under the effect of electrode accelerating impact wafer 5 surfaces reach etched purpose.As can be seen from Figure 1, radio frequency, high direct voltage and brilliant back of the body cold gas are that order is opened successively.In preferred embodiment of the present invention, open between radio frequency and the unlatching high direct voltage interlude section at 1s between the 20s.
Method provided by the invention is to apply radio frequency earlier, action of radio produces and is suspended in wafer 5 top plasmas, because charged particle (electronics in the plasma, cation) constantly motion, make and impel reaction chamber 1 interior micronic dust adsorption charge charged micronic dust to be suspended in the plasma, and then apply high direct voltage, just can not make micronic dust be adsorbed in wafer 5 surfaces owing to adding high direct voltage generation electric field, the electric field of high direct voltage generation simultaneously be adsorbed on the electrostatic chuck 3 wafer 5 more securely.
The present invention mentions in the new engraving method, be to take to apply earlier the technology that radio frequency applies high direct voltage again, the figure that has effectively prevented wafer 5 surfaces is covered by the micronic dust of reaction chamber 1 inwall, effectively reduces wafer 5 defective incidences, thereby has improved wafer 5 etched yields.
Claims (4)
1, a kind of reaction ionic etching method, this is etched in the reaction chamber and carries out, and is provided with the electrostatic chuck of carrying wafer in the reaction chamber; It is characterized in that this method comprises the steps:
A. charge into etching gas to reaction chamber;
B. apply radio frequency, under the effect of radio frequency, etching gas forms plasma;
C. apply high direct voltage, the effect of high direct voltage is adsorbed on the electrostatic chuck wafer securely.
2, a kind of reaction ionic etching method as claimed in claim 1 is characterized in that, action of radio produces and is suspended in wafer top plasma among the described step b, and the micronic dust in the reaction chamber is inclusive in the plasma.
3. a kind of reaction ionic etching method as claimed in claim 1 is characterized in that, described step b applies behind the radio frequency certain hour Duan Houzai execution in step c at interval.
4. a kind of reaction ionic etching method as claimed in claim 3 is characterized in that, the scope that the described time period is selected is between 1 second to 20 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710046255A CN100585798C (en) | 2007-09-21 | 2007-09-21 | Reactive ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710046255A CN100585798C (en) | 2007-09-21 | 2007-09-21 | Reactive ion etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101393841A true CN101393841A (en) | 2009-03-25 |
| CN100585798C CN100585798C (en) | 2010-01-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710046255A Active CN100585798C (en) | 2007-09-21 | 2007-09-21 | Reactive ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100585798C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459458A (en) * | 2019-08-29 | 2019-11-15 | 上海华力集成电路制造有限公司 | Plasma etch process |
| CN117238743A (en) * | 2023-11-10 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
-
2007
- 2007-09-21 CN CN200710046255A patent/CN100585798C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459458A (en) * | 2019-08-29 | 2019-11-15 | 上海华力集成电路制造有限公司 | Plasma etch process |
| CN110459458B (en) * | 2019-08-29 | 2021-12-07 | 上海华力集成电路制造有限公司 | Plasma etching process |
| CN117238743A (en) * | 2023-11-10 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
| CN117238743B (en) * | 2023-11-10 | 2024-02-09 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100585798C (en) | 2010-01-27 |
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| C14 | Grant of patent or utility model | ||
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111115 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |