CN101393386B - Reticle mask making method by FPD mask making equipment - Google Patents
Reticle mask making method by FPD mask making equipment Download PDFInfo
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- CN101393386B CN101393386B CN2008102171184A CN200810217118A CN101393386B CN 101393386 B CN101393386 B CN 101393386B CN 2008102171184 A CN2008102171184 A CN 2008102171184A CN 200810217118 A CN200810217118 A CN 200810217118A CN 101393386 B CN101393386 B CN 101393386B
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Abstract
The invention discloses a method for manufacturing a Reticle mask plate by using a FPD mask plate manufacturing device. The method comprises the following steps of: (1) transforming graphics designed by the Reticle mask plate into electronic data files which are identified by a Reticle mask plate exposing device by the computer aided processing; (2) putting the electronic data files obtained in step (1) on the raw material of the Reticle mask plate and carrying out the operation of the laser direct writing and photoetching by the Reticle mask plate exposing device; (3) developing the raw material of the Reticle mask plate; (4) etching the raw material of the Reticle mask plate; (5) stripping the Reticle mask plate from the raw material of the Reticle mask plate and cleaning the Reticle mask plate; and (6) attaching the protective film of the Reticle mask plate on the surface of the Reticle mask plate. The FPD mask plate mask plate manufacturing device is utilized to manufacture the Reticle mask plate, the investment is low and the production circle is short.
Description
Technical field
The invention belongs to Reticle mask method for making field, relate in particular to a kind of with the method for FPD mask making apparatus making IC bumping with the Reticle mask.
Background technology
IC bumping produces with the IC Manufacturing Technology Development with the Reticle mask; IC bumping is by litho pattern on synthetic quartz mask raw material with the Reticle mask; make at applying mask diaphragm (Pellicle film) then, it is mainly used in the following IC manufacturing process of 0.5 μ m.
IC bumping is as follows with the key technical indexes of Reticle mask:
1, material property
A. chromium film thickness: 100nm ± 10%
B. optical density (OD) (OD): 3.0 ± 0.3 (wavelength 450nm), reflectivity: 10% ± 10% (wavelength 436nm)
C. base version flatness is in 5 μ m
2, mask pattern technical indicator
A. graph processing technique mainly is the processing of GDSII file layout and according to the bar code of Code39 coding rule
B. pattern precision is controlled at ± 0.25 μ m
3, light shield cuticula (Pellicle film) applying precision: ± 0.5mm
4, defective index: critical area requires defective＜1.5 μ m
Also begin to adopt Reticle mask technology in IC encapsulation technology CSP BUMP (the Chip Size Packaging) operation in recent years.This series products physical dimension is generally 5 ＂～7 ＂, and its mask pattern accuracy requirement height is equivalent to 1.0 μ m IC manufacturing technologies.
Because IC bumping than higher, needs IC mask platemaking equipment to make with the accuracy requirement of Reticle mask, as using as electron beam E-BEAM exposure machine.IC mask platemaking equipment is the very high mask plate making apparatus of a kind of precision, and its precision generally can be accurate to several nanometers, can satisfy because the needs of Reticle mask.But, use IC mask platemaking equipment to make IC bumping and with the Reticle mask following two shortcomings are arranged: 1, IC mask platemaking equipment is very expensive, several ten million dollars of general values, and it is very harsh to requirements such as auxiliary facility, environment, therefore needs very large fund input; 2, it is longer with the cycle of Reticle mask to use IC mask platemaking equipment to make IC bumping, generally wants about 48 hours, is unfavorable for the market demands of IC bumping with the quick delivery of Reticle mask.
Summary of the invention
The object of the present invention is to provide a kind of FPD of utilization mask making apparatus to make the method for Reticle mask, particularly make the method for the Reticle mask that IC bumping uses, it is big to be intended to solve the fund input that brings with the Reticle mask with IC mask platemaking equipment making IC bumping, the problem that fabrication cycle is long.
The present invention realizes like this, a kind of method with FPD mask making apparatus making Reticle mask, may further comprise the steps: (1) handles the electronic data file that changes into the identification of Reticle mask exposure sources with the figure of Reticle mask plate design by area of computer aided; (2) electronic data file of step (1) being obtained by Reticle mask exposure sources carries out the laser direct-write photoetching operation on Reticle mask plate raw material; (3) Reticle mask plate raw material is carried out development treatment; (4) Reticle mask plate raw material is carried out etch processes; (5) the Reticle mask plate is peeled off and to its cleaning from Reticle mask plate raw material; (6) Reticle mask plate diaphragm is fitted on the surface of Reticle mask plate.
Owing to take above technical scheme, utilize the low FPD mask making apparatus of ratio of precision IC mask platemaking equipment also can produce the high IC bumping Reticle mask plate of accuracy requirement, the price of FPD mask making apparatus is lower than IC mask platemaking equipment, produce the weak point of IC bumping with the period ratio IC mask platemaking equipment of Reticle mask plate, utilizing FPD mask making apparatus production IC bumping is about 10 hours with the cycle of Reticle mask plate, producing IC bumping than IC mask platemaking equipment needs about 48 hours cycles obviously to shorten with the Reticle mask plate, make IC bumping Reticle mask plate so utilize FPD mask making apparatus, drop into lower, production cycle is shorter, can save production cost in a large number, significantly improve production efficiency.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
A kind of method of making the Reticle mask of FPD mask making apparatus of the present invention, be to make IC bumping Reticle mask in the present embodiment with FPD mask making apparatus, described FPD mask making apparatus is Micronic MP80 or HIMT MW800, and this method may further comprise the steps:
(1) figure with the mask plate design changes into the electronic data file of IC bumping with Reticle mask exposure sources by the area of computer aided processing; Be to write the graphic designs model in the present embodiment by the CAD module, and in CAD, write the barcode maker according to the code39 technical requirement, can improve software processing speed like this, also reduce the production cycle of IC bumping simultaneously with the Reticle mask plate.
(2) will carry out the laser direct-write photoetching operation by the electronic data file that step (1) is obtained by Reticle mask exposure sources on Reticle mask plate raw material, the exposure energy parameter of described Reticle mask exposure sources is 4000 to 5000;
(3) Reticle mask plate raw material is carried out development treatment, the time of described developing process is 45 seconds to 80 seconds; Described development treatment is to manifest processing by the figure that the chemical treating process that develops utilizes present technique field existing conventional means will finish the mask raw material of photoetching making at photoresist layer.
(4) Reticle mask plate raw material is carried out etch processes, the described etch process time is 45 seconds to 80 seconds; Described etch processes is that the chemical treating process by etching solution carries out etching with the chromium layer (also can be described as Chrome Film) of mask, and etching solution adopts prior art acidic etching liquid commonly used.
(5) in the completing steps (4) after the chromium layer etch processes, by the liquid parting chemical action photoresist layer of mask is peeled off and is cleaned again, finish cleaning after, again the Reticle mask plate is carried out the measurement of various precision.Use 10 times to 100 times microscope in the described measuring operation, liquid parting adopts prior art common alkali liquid parting.
(6) will check the defective of Reticle mask plate to the figure of the described Reticle mask plate design of the contrast step of the Reticle mask plate measurement result in the step (5) (1), if Reticle mask plate defectiveness is repaired processing to defective.
(7) clean by the tow sides of chemical cleaning technology, to remove impurity or the spot that abovementioned steps produces to the Reticle mask.
(8) Reticle mask diaphragm (Pellicle film) is fitted on the chromium face of the Reticle mask of finishing cleaning.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. make the method for Reticle mask with FPD mask making apparatus for one kind, may further comprise the steps:
(1) figure of Reticle mask plate design is handled the electronic data file that changes into the identification of Reticle mask exposure sources by area of computer aided;
(2) electronic data file of step (1) being obtained by Reticle mask exposure sources carries out the laser direct-write photoetching operation on Reticle mask plate raw material;
(3) Reticle mask plate raw material is carried out development treatment;
(4) Reticle mask plate raw material is carried out etch processes;
(5) the Reticle mask plate is peeled off and to its cleaning from Reticle mask plate raw material;
(6) Reticle mask plate diaphragm is fitted on the surface of Reticle mask plate.
2. a kind of method of making the Reticle mask of FPD mask making apparatus as claimed in claim 1, it is characterized in that: the exposure energy parameter of Reticle mask exposure sources is 4000 to 5000 in the described step (2), the time of developing process is 45 seconds to 80 seconds in the described step (3), and described step (4) the etch process time is 45 seconds to 80 seconds.
3. a kind of method with FPD mask making apparatus making Reticle mask as claimed in claim 1 or 2 is characterized in that: further comprising the steps of between step (5) and the step (6):
Reticle mask plate after A, measurement are peeled off from Reticle mask plate raw material;
The figure of B, the described Reticle mask plate design of contrast step (1) is checked the defective of Reticle mask plate, if Reticle mask plate defectiveness is repaired processing to defective;
C, cleaning Reticle mask plate.
4. a kind of method with FPD mask making apparatus making Reticle mask as claimed in claim 3 is characterized in that: use 10 times to 100 times microscope in the measurement technological operation of described steps A.
5. a kind of method with FPD mask making apparatus making Reticle mask as claimed in claim 1 or 2, it is characterized in that: described Reticle mask is IC bumping Reticle mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102171184A CN101393386B (en) | 2008-10-28 | 2008-10-28 | Reticle mask making method by FPD mask making equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102171184A CN101393386B (en) | 2008-10-28 | 2008-10-28 | Reticle mask making method by FPD mask making equipment |
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| Publication Number | Publication Date |
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| CN101393386A CN101393386A (en) | 2009-03-25 |
| CN101393386B true CN101393386B (en) | 2010-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008102171184A Active CN101393386B (en) | 2008-10-28 | 2008-10-28 | Reticle mask making method by FPD mask making equipment |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111830784A (en) * | 2020-07-06 | 2020-10-27 | 深圳清溢光电股份有限公司 | Production method of special-shaped glass mask |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001057333A (en) * | 1999-08-19 | 2001-02-27 | Nec Corp | Electron beam exposure mask, electron beam exposure method using this, electron beam aligner and manufacture of device |
| JP2002072444A (en) * | 2000-09-04 | 2002-03-12 | Hitachi Ltd | Method for producing semiconductor integrated circuit device |
| CN1591189A (en) * | 2003-03-31 | 2005-03-09 | Asml蒙片工具有限公司 | Source and mask optimization |
| CN1847984A (en) * | 2005-04-04 | 2006-10-18 | 中国科学院微电子研究所 | Method of realizing 100nm patterns with transparent no-chromium phase shift mask |
-
2008
- 2008-10-28 CN CN2008102171184A patent/CN101393386B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001057333A (en) * | 1999-08-19 | 2001-02-27 | Nec Corp | Electron beam exposure mask, electron beam exposure method using this, electron beam aligner and manufacture of device |
| JP2002072444A (en) * | 2000-09-04 | 2002-03-12 | Hitachi Ltd | Method for producing semiconductor integrated circuit device |
| CN1591189A (en) * | 2003-03-31 | 2005-03-09 | Asml蒙片工具有限公司 | Source and mask optimization |
| CN1847984A (en) * | 2005-04-04 | 2006-10-18 | 中国科学院微电子研究所 | Method of realizing 100nm patterns with transparent no-chromium phase shift mask |
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| CN101393386A (en) | 2009-03-25 |
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Owner name: SHENZHEN QINGYI PRECISION MASKMAKING CO., LTD. Free format text: FORMER NAME: QINGYI PRECISION MASKMAKING (SHENZHEN) CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: Two road high tech Industrial Zone in Shenzhen city Guangdong province 518057 North Song Ping Lang mountain No. 8 Patentee after: Qingyi Precision Maskmaking (Shenzhen) Co., Ltd. Address before: Two road high tech Industrial Zone in Shenzhen city Guangdong province 518057 North Song Ping Lang mountain No. 8 Patentee before: Qingyi Precision Mask Making (Shenzhen) Co., Ltd. |
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Denomination of invention: Reticle mask making method by FPD mask making equipment Effective date of registration: 20131023 Granted publication date: 20101201 Pledgee: Shenzhen SME credit financing guarantee Group Co., Ltd. Pledgor: Qingyi Precision Maskmaking (Shenzhen) Co., Ltd. Registration number: 2013990000769 |
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Date of cancellation: 20150616 Granted publication date: 20101201 Pledgee: Shenzhen SME credit financing guarantee Group Co., Ltd. Pledgor: Qingyi Precision Maskmaking (Shenzhen) Co., Ltd. Registration number: 2013990000769 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Reticle mask making method by FPD mask making equipment Effective date of registration: 20150623 Granted publication date: 20101201 Pledgee: Shenzhen SME credit financing guarantee Group Co., Ltd. Pledgor: Qingyi Precision Maskmaking (Shenzhen) Co., Ltd. Registration number: 2015990000498 |
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Date of cancellation: 20160607 Granted publication date: 20101201 Pledgee: Shenzhen SME credit financing guarantee Group Co., Ltd. Pledgor: Qingyi Precision Maskmaking (Shenzhen) Co., Ltd. Registration number: 2015990000498 |
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