CN101390217A - Flip-chip device having underfill in controlled gap - Google Patents
Flip-chip device having underfill in controlled gap Download PDFInfo
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- CN101390217A CN101390217A CNA2007800069804A CN200780006980A CN101390217A CN 101390217 A CN101390217 A CN 101390217A CN A2007800069804 A CNA2007800069804 A CN A2007800069804A CN 200780006980 A CN200780006980 A CN 200780006980A CN 101390217 A CN101390217 A CN 101390217A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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Abstract
A flip-chip and underfilled device, which includes a semiconductor chip (101) with contact pads and a workpiece (102) with contact pads in matching locations; the workpiece may be an insulating substrate or another semiconductor chip. The workpiece and the chip are spaced by a gap (103) of substantially uniform average width. Attached to each chip contact pad is a column-shaped spacer (140), which includes two or more deformed spheres of non-reflow metals, preferably gold, bonded together to a height about equal to the gap width. The spacer is attached to the contact pad (110) substantially normal to the chip surface and extends from the chip pad to the matching workpiece pad (120); it is bonded to the workpiece pad by reflow metals (141) such as tin or tin alloy, which covers at least portions of the workpiece pad and the spacer. The gap may be filled with a polymer material surrounding the reflow metal and spacers.
Description
Technical field
The present invention relates generally to semiconductor device and technology field, and more particularly, relate to the low profile flip-chip apparatus for assembling of control gap to be used to carry out fill at the even end is provided between chip and substrate.
Background technology
Integrated circuit (IC) chipset installed to have conductor wire when connecting by solder projection (for example, printed circuit mother board on) the dielectric substrate time, the spaced apart gap of chip and substrate.The solder projection interconnection extends across described gap.The IC chip is semiconductor (for example, silicon, SiGe or GaAs) normally, and substrate is usually by making based on the material of pottery or polymer, for example, and FR-4.Therefore, there is significant difference between the thermal coefficient of expansion between chip and the substrate (CTE); For example, with silicon (being about 2.5ppm/ ℃) as semi-conducting material and with plastics FR-4 (being about 25ppm/ ℃) during as backing material, the difference of CTE is about the value of an order of magnitude.Because this CTE difference, when sub-assembly device use or reliability testing during when standing temperature cycles, (especially in joint area) produces thermal and mechanical stress on welding flux interconnected.These stress tend to make joint and projection fatigue, thereby cause the sub-assembly fracture also finally to be broken down.
Do not influence electrical connection in order to distribute mechanical stress and reinforcement solder joints, usually with the gap between polymeric material filling semiconductor chip and the substrate.The polymeric material encapsulates projection is also filled any space in the gap.For example, in well-known " C-4 " technology of International Business Machines Corporation (International Business Machines Corporation) exploitation, be to use polymeric material to fill any space in the gap between silicon and the ceramic substrate.
Usually experienced reflux technique and be formed for the after-applied encapsulant of the metal joint that electrically contacts between IC chip and the substrate at solder projection.Viscous polymeric precursor (being called " end filling " sometimes) interspersed among on the substrate with chip by chip and by capillary force it is drawn in the gap.Then to predecessor heat, polymerization and " curings " is with the formation encapsulant.
Well-known in the industry, fill the required temperature cycles of curing process and can produce thermal and mechanical stress on himself at the end, and this can be to chip and/or the welding flux interconnected adverse effect that causes.When sub-assembly when reflux temperature is cooled to ambient temperature, can produce extra stress.The stress that these processing steps produced can be with the solder joints delamination, make the passivation fracture of chip, or with rupture propagation in circuit structure.
Usually, to the susceptibility of the fracture of the solder joints of integrated circuit and hierarchy just along with the reduction (the ongoing trend toward miniaturization as semiconductor product is required) of solder ball size and just along with because the reduction of the gap width due to the solder ball size that reduces and greatly increasing.In addition, it is more and more unreliable that the reduction of gap width gets the polymeric rheology based on capillary force, and this causes the space in the end packing material that the inhomogeneities with the remarkable increase of size and stress accompanies.
Summary of the invention
The applicant recognizes needs a kind of assemble method, it can accept the solder ball diameter and the solder ball spacing of the reduction of flip-chip device on the one hand, and can eliminate the width in the gap in apparatus for assembling and influencing each other of bulb diameter on the other hand, so that polymeric material can be filled the gap and do not stayed the space.Can therefore utilize the stress distribution benefit of end packing material, and can not cause harmful side effect, thereby produce the enhanced device reliability end fill process.Described method relevant, cheaply and enough flexibly so that be applied to different semiconductor product families and various design and processes modification.
One embodiment of the present of invention are a kind of flip-chips and through end filling device, the workpiece that it comprises the semiconductor chip with contact mat and has the contact mat in matched position; Described workpiece can be dielectric substrate or second half conductor chip.Described workpiece and described chip chamber separate roughly the evenly gap of mean breadth.What be attached to each chip contact mat is columnar spacers, and it comprises the deformed sphere of two or more the non-reflow metal (being preferably gold) that reach the height that approximates described gap width of being bonded together.Described distance piece is approximately perpendicular to described chip surface and is attached to described contact mat and extends to described coupling workpiece pad from described chip mat; Described coupling workpiece pad joins described workpiece pad to by reflow metal (for example, tin or ashbury metal), to cover the several portions at least of described workpiece pad and described distance piece.Described gap can be used around the polymeric material of described reflow metal and distance piece and fill.
Another example of the present invention is a kind ofly to be used to make flip-chip and through the method for end filling semiconductor device.Described method begins by semiconductor wafer is provided, and described semiconductor wafer has the device that has the contact mat that is positioned at some pad positions place.The ball that the free air balls technology of using line to engage will be preferably gold or copper places and is squeezed on first contact mat.The polybenzazole precursor thing of selecting the known fluid mechanical property is as end packing material.After this, repeat described ball placement and have the columnar spacers of learning compatible height with the fluid machinery of packing material of the selected end with formation.
Severally get off, workpiece wafer is provided, it has the contact mat of the position of the position that is arranged in the coalignment contact mat.Reflow metal (for example, tin or ashbury metal) is applied to the contact mat of device wafer or workpiece wafer.Then place described workpiece wafer on the device wafer and described workpiece pad is aimed at the coupling distance piece on the described device.Apply heat energy so that the metal reflow on the described contact mat so that join described distance piece to described workpiece, so that described semiconductor wafer is electrically connected with described workpiece wafer, but still the gap of spaced apart height according to described distance piece.After this, available described selected end packing material is filled described gap.At last, and preferably will be through the single semiconductor device that changes into discrete flip-chip and fill of the wafer of assembling the end of through by sawing.
Before this individualized step,, be favourable with described being encapsulated in the protective material through assembling and the semiconductor of filling and workpiece wafer the end of through for some embodiment.
Described workpiece can be the dielectric substrate that forms one with conductor wire, or it can be second half wafer conductor.
Description of drawings
Figure 1A describes to be assembled in the schematic sectional view of the semiconductor device on the substrate with some distance pieces, and described distance piece determines evenly to fill with polymeric material the width in necessary gap between module units, gap.
Figure 1B illustrates the schematic sectional view that is assembled in the semiconductor device on another substrate with a distance piece, and described distance piece determines evenly to fill with polymeric material the width in necessary gap between module units, gap.
Fig. 2 is to the important step of the manufacturing process of 5 schematic illustration distance pieces and device assembly.
Fig. 2 schematically show the free air balls that is attached to the device contact mat through the extruding spheroid.
Fig. 3 schematically shows forming by two on the device contact mat columnar spacers through pushing the free air balls manufacturing.
Fig. 4 schematically shows the columnar spacers on the contact mat of the flipped device of aiming at the substrate contact mat.
Fig. 5 is illustrated schematically in the device distance piece that contacts with substrate bond pad that end fill process step connects by reflow metal before.
Embodiment
Figure 1A and 1B graphic extension are through the several portions of assembled semiconductor device.Device among Figure 1A comprises: semiconductor chip 101, itself and workpiece 102 spaced apart gaps 103; And conductor 104, the described gap of its bridge joint and be electrically connected described chip and workpiece.Gap 103 usable polymers materials 105 are filled.Device among Figure 1B comprises: semiconductor chip 151, itself and workpiece 152 spaced apart gaps 153; And conductor 154, the described gap of its bridge joint and be electrically connected described chip and workpiece.Gap 153 usable polymers materials 155 are filled.
Insulating barrier 111 and 161 more generally can be a solder mask; When described solder mask define as shown in Figure 1A through exposing metal 110 and 160 time, usually metal gasket is called the metal gasket that solder mask defines.
In Figure 1A, workpiece 102 and chip 101 spaced apart gaps 103.The width in gap 103 is localized variation: in the contact mat position, the gap has width 103a; Between contact mat, the gap has width 103b.Width 103a is the distance between chip surface 101a and the surface of the work 102a.Width 103b than on the little chip of width 103a and workpiece on tectal thickness and.
Similar consideration is applicable to the gap 153 among Figure 1B.
In Figure 1A, the major part at the core place of conductor 104 is columnar spacers 140, and it comprises the deformed sphere of two or more the non-reflow metal that reach the height that approximates gap width of being bonded together; The remainder of conductor core and height thereof are provided by metal trace 120.
As defined herein, the term reflow metal is meant molten metal or alloy under the temperature between about 150 and 320 ℃; The example is the scolder of being made by tin or various ashbury metal (containing silver, copper, bismuth and lead).On the contrary, the non-reflow metal of term is meant molten metal or alloy under the temperature between about 900 and 1200 ℃; The example is silver, Jin Jitong.
In Figure 1B, the core of conductor 154 is to be made by columnar spacers 190, and described columnar spacers comprises the deformed sphere (example of Figure 1B shows four deformed sphere) of a string non-reflow metal that is bonded together.Distance piece 190 has the height of the gap width of approximating. Distance piece 140 and 190 preferred non-reflow metal are gold or billon; Another selection is that distance piece 140 and 190 can be copper or copper alloy.
Show that as Figure 1A and 1B distance piece is approximately perpendicular to chip surface (101a, 151a) and is attached to chip contact mat (110,160) and extends to coupling workpiece contact mat (120,170) from the chip contact mat.Distance piece joins the workpiece contact mat to by reflow metal (141,191) (being preferably tin or ashbury metal).Reflow metal covers the several portions at least of workpiece contact mat (120,170) and the several portions of distance piece (140,190); In the example of Figure 1A and 1B, reflow metal covers distance piece fully.Therefore, reflow metal is with chip (101,151) and workpiece (102,152) electrical interconnection.
Chip and the isolated gap of workpiece usable polymers material are filled, and described polymeric material is around connector and preferably comprise predecessor based on epoxy resin or polyimide compound.In Figure 1A, the polymer of filling the gap is appointed as 105 and around connector 104, and in Figure 1B, the polymer of filling the gap is appointed as 155 and around connector 154.Polymeric material is filled the gap and roughly can not formed the space.
Routine techniques only uses single ball to come jockey wafer and workpiece wafer; Therefore gap between assembled wafers is determined by the size (diameter) of these balls.Therefore, the spacing of the center to center between the ball also is subjected to the restriction of bulb diameter and can't reduces under the situation that does not make gap turn narrow simultaneously.On the contrary, according to the present invention, the width in gap is by the height of distance piece and therefore controls through the number of extrusion metal spheroid.Therefore, the distance piece center line is to spacing reduction freely under the situation of not reducing the gap simultaneously of center line.In this way, can make the device of narrow pad spacing of combination and broad gap.For the device with given contact mat spacing, the diameter of selecting deformed sphere is so that the spacing of contact mat center to center is not more than 150% of diameter.
Another embodiment of the present invention is a kind ofly to be used to make flip-chip and through the method for end filling semiconductor device, described semiconductor device comprises the workpiece in a chip and a spaced apart gap.As mentioned above, the width in the gap between chip and the workpiece can change around mean value.For many devices, owing to must fill the gap equably with polymeric material, so some law of applied fluid dynamics of the present invention and deformable medium is to select required distance piece height at the preferred polymers predecessor with suitable fluid machinery character.
For the deformable medium that flows in the gap that in different piece, has different cross section q, its continuity need time per unit flow through each cross section the deformability medium amount and q and therewith the speed v in the cross section be directly proportional:
qv＝const。
In the gap, deformable medium flows the most soon at the smallest cross-sectional place.
Make the speed v of circulating medium of density p relevant by following equation afterwards at Bernoulli (Bernoulli) with its pressure p:
1/2?ρv
2+p＝const。
The pressure p of circulating medium is more little, and its speed is big more.Therefore, the pressure at small cross sections place is less than the pressure at larger cross-section place.
When the part that has a different cross section when the gap is separated by the different length in gap, also must consider to fall along the pressure of gap length; And described reduction depends on that the characteristic, laminar flow of stream are to turbulent flow.
Because of the pressure due to the friction Δ p falls with the deformable medium experience that flows in the part of the radius r in gap and length 1 at the Mean Speed v on the tube section.For idealized conditions (for example, ignoring the inertia of circulating medium), found the Kazakhstan root and poiseuille (the Hagen and Poiseuille) equation of laminar flow:
Δp＝8η1v/r
2。(η=Dynamic Viscosity)
Media falls along the pressure of gap portion length and is directly proportional with the first power of Mean Speed and is inversely proportional to the secondary power of part radius.
On the contrary, for turbulent flow, described relation is
Δp＝ρλ1v
2/r。
(ρ=density, the λ=no dimension relevant) with the switching criterion from the laminar flow to the turbulent flow of Reynolds.
Media falls along the pressure of gap portion length and is directly proportional with the secondary power of Mean Speed and is inversely proportional to the first power of part radius.
With reference to Figure 1A, it is half some gap portions of width 103b at radius r, and is half some gap portions of width 103a at radius r.As discussed above, gap width is determined by distance piece 140.
Be used for flip-chip constructed in accordance and begin by the semiconductor wafer with active and passive surface is provided through the method for end filling semiconductor device; Described active surface comprises the device with the contact mat that is arranged in some pad positions.In the embodiment of Fig. 2, show that the part of semiconductor wafer 201 has the active surperficial 201a that is covered by protection cover layer 202.Window in the cover layer 202 is provided to the path as the device metal thing 203 of contact mat; Therefore described window delineates the contact mat position.Metallide 203 is preferably made by copper alloy, and it has the surface configuration that is suitable for the line joint in window; Copper has the aluminum alloy surface layer that is suitable for the gold thread joint or closelys follow the nickel dam that pushes up the gold layer and pile up (not showing these superficial layers among Fig. 2).
To be formed at first free air balls 204 on the transfer matic connector by on the contact mat 203 that is pressed in device 201 and it is flattened.Diameter 205 can be in the scope of about 15 to 120 μ m.In this embodiment, free air balls is to be made by closing line, and it is the alloy that is rich in the mixture cures of gold and the copper by having little percentage and other metal.In habitual transfer matic connector, lead (preferably diameter is between about 15 and 90 μ m) is lined up to plough and is passed capillary 206.Place, tip at lead uses flame or activating technology to form free air balls or spheroid.Described ball has from the representative diameter of about 1.2 to 1.6 diameters of wire.With capillary towards metal gasket 203 move and with ball by being pressed on the metal gasket.Compression (also be called Z or smash to pieces) power usually about 17 and 75g between.When pushing, temperature is usually in from 150 to 270 ℃ scope.Be appointed as 204a through extrusion ball through the fray-out of flame tip; Its from apparatus surface 201a towards outside.
In Fig. 3, second ball 302 of size that will approximate first ball with the substantial linear sequence is by on the top that is pressed in first ball (be now through extruding and be designated as 301), preferably so that the center to center line approximately perpendicular to the equatorial plane of described ball.Tolerable and the vertically arranged deviation of looking.Can repeat the formation of ball and place so that its height is learned based on the fluid machinery of packing material of the selected end and the columnar spacers of the required gap width of device to be formed in that the device wafer upside-down mounting is formed on workpiece wafer the time.
In Figure 1B, the distance piece of display segment, it forms, engages with about linear order by transfer matic and produce and pile up through the extrusion ball body by four of about equal sizes, thus the formation columnar spacers.Through the tip of fray-out of flame outside surfaces for attachment 151a points to.The axle of the distance piece of segmentation is approximately perpendicular to surfaces for attachment.
For many products, the placement of repetition produces the distance piece of about equal height, so that the spaced apart roughly uniform distance of semiconductor wafer and workpiece wafer.Yet for some embodiment, technological merit of the present invention is to make predetermined space spare than the more segmentation of other technology, so as to make that distance piece follows specific device exactly do not wait surface topography.
In the next step of the manufacture method of graphic extension, provide workpiece wafer 401 in Fig. 4, it has the active surperficial 401a that is covered by protection cover layer 402.Workpiece 401 can be second half wafer conductor or form the sheet dielectric substrate of one with conductor wire and through hole.Window in the cover layer 402 is provided to the path as the workpiece metal thing 403 of the contact of arriving workpiece.Embodiment depicted in figure 4 shows that the workpiece contacts metal forms double-screw bolt or projection 403; Another selection is that the embodiment among Figure 1B shows that workpiece contacts metal 170 forms layer.The position of the location matches chip contact mat of workpiece contact mat.
Next, reflow metal 404 (for example, tin or ashbury metal) is applied to the metal of workpiece contacts.In Fig. 4, described reflow metal is schematically illustrated as the thin layer around metal 403; Another selection is that it maybe can be paste that described reflow metal can have spherical form.
In other embodiments, reflow metal is applied to distance piece on the device contact.
Then, with semiconductor wafer 201 upside-down mountings and be positioned on the workpiece wafer 401.With described wafer aligned so that the distance piece 440 on the device aim at mating workpiece contact mat 403, as describing among Fig. 4.Aligning is by line 405 indications.
Next, apply heat energy so that the reflow metal 404 on the workpiece contact mat refluxes so that join distance piece 440 to workpiece contacts.In addition, device wafer is lowered on the workpiece metal thing till setting up contacting between distance piece 440 and the metallide 403.This block diagram is illustrated among Fig. 5.In this technology, reflow metal 504 can be the moistening part or all of of distance piece 440.Therefore semiconductor wafer 201 is electrically connected to workpiece wafer 401, but still according to the vertical separation standard width of a room in an old-style house crack 503 of distance piece 440.Wafer through connecting is cooled to ambient temperature.
After this, fill gap 503 with selected polymeric material (being preferably predecessor) based on epoxy resin or polyimides.Allow predecessor generation polymerization.
For some embodiment, it is favourable will being encapsulated in the protective material through assembling and the semiconductor of filling the end of through and workpiece wafer, preferably uses mold compound in the transfer moulding technology.At last, preferably will be through the single semiconductor device that changes into discrete flip-chip and fill of assembled wafers the end of through by sawing.
Although described the present invention with reference to illustrative embodiment, this explanation should be interpreted as have limiting meaning.With reference to this explanation, be understood by those skilled in the art that the various modifications and the combination of illustrative embodiment, and other embodiments of the invention.
As an example, described embodiment is to semiconductor device and to have any other device of contact mat all effective, and described device must experience in assembling on substrate or the printed circuit board (PCB) and the gap between end filling device and the substrate and then.As another example, described semiconductor device can comprise the product based on silicon, SiGe, GaAs and other semi-conducting material that on the make adopts.As another example, notion of the present invention to many semiconductor device technology nodes effectively and be not restricted to wherein specific one.
Any this type of modification or embodiment are contained in the invention plan of therefore, being advocated.
Claims (10)
1, a kind of semiconductor device, it comprises:
Semiconductor chip, it has the surface that comprises first contact mat that is positioned at some positions;
Workpiece, it has the surface that comprises second contact mat that is positioned at some positions, described some positions of described first contact mat of described some location matches, the gap that described workpiece and described street are opened a width;
Have the columnar spacers of a height, it comprises two or more non-reflow metal distortion of materials spheroids, and described deformed sphere is bonded together and is attached to each first pad and extends towards coupling second pad from described first pad; And
The reflow metal material, it covers the several portions at least of described second pad and described distance piece and makes described chip and described workpiece electrical interconnection.
2, device as claimed in claim 1, it further has fills described gap and around the polymeric material of described reflow metal and distance piece.
3, device as claimed in claim 2, wherein said distance piece height cooperates with the fluid machinery character of described polymeric material, so that described polymeric material is filled described gap and roughly do not formed the space.
4, as claim 1,2 or 3 described devices, wherein said deformed sphere has the size that approximately equates.
5, as claim 1,2 or 3 described devices, wherein said non-reflow metal material comprises at least one in gold or the copper; Wherein said reflow metal material comprises at least one in tin or the ashbury metal; And wherein said polymeric material comprises the predecessor based on epoxy resin and polyimide compound.
6, device as claimed in claim 1, wherein said deformed sphere has diameter, so that the spacing of the described first contact mat center to center is not more than 150% of described diameter.
7, a kind of method that is used to make semiconductor device, it may further comprise the steps:
Semiconductor wafer is provided, and it has the surface that comprises first contact mat that is positioned at some positions;
Non-reflow metal ball is placed and is squeezed on each first contact mat;
Provide the polybenzazole precursor thing as end packing material;
Repeat described ball and place step has height with formation columnar spacers;
Workpiece wafer is provided, and it has the surface that comprises second contact mat that is positioned at some positions, described some positions of described first contact mat of described some location matches;
The reflow metal material is applied in described first and second contact mat at least one;
Described workpiece wafer is positioned on the device wafer, and described second pad is aimed at the described distance piece on the described device;
Apply heat energy so that the described metal material on described second pad refluxes to be used for joining described distance piece to described workpiece, so that described semiconductor wafer is connected with electrically conducting manner with described workpiece wafer, but still the spaced apart gap of defining by the described height of described distance piece;
Fill described gap with packing material of the described end; And
With the described single discrete semiconductor device that changes into of wafer through assembling.
8, method as claimed in claim 7, it further is included in before the described individualized step, is encapsulated in step in the protective material with described through assembling and the semiconductor of filling the end of through and workpiece wafer.
9, method as claimed in claim 7, wherein said non-reflow metal ball are no air gold goals or do not have one in the air copper ball.
10, as claim 7,8 or 9 described methods, wherein the Metal Ball that produces described repetition with the line joint technology is placed, so that described ball through extruding has the size that approximately equates and is bonded together to form columnar spacers.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77769906P | 2006-02-28 | 2006-02-28 | |
| US60/777,699 | 2006-02-28 | ||
| US11/424,555 | 2006-06-16 |
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| Publication Number | Publication Date |
|---|---|
| CN101390217A true CN101390217A (en) | 2009-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800069804A Pending CN101390217A (en) | 2006-02-28 | 2007-02-28 | Flip-chip device having underfill in controlled gap |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347532A (en) * | 2013-07-31 | 2015-02-11 | 日月光半导体制造股份有限公司 | Semiconductor packaging piece and manufacturing method thereof |
| WO2021179185A1 (en) * | 2020-03-10 | 2021-09-16 | 华为技术有限公司 | Chip stacking structure, manufacturing method, and electronic device |
-
2007
- 2007-02-28 CN CNA2007800069804A patent/CN101390217A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347532A (en) * | 2013-07-31 | 2015-02-11 | 日月光半导体制造股份有限公司 | Semiconductor packaging piece and manufacturing method thereof |
| CN104347532B (en) * | 2013-07-31 | 2017-08-04 | 日月光半导体制造股份有限公司 | Semiconductor package assembly and a manufacturing method thereof |
| WO2021179185A1 (en) * | 2020-03-10 | 2021-09-16 | 华为技术有限公司 | Chip stacking structure, manufacturing method, and electronic device |
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