CN101386402B - A kind of Infrared Detectors and manufacture method thereof - Google Patents
A kind of Infrared Detectors and manufacture method thereof Download PDFInfo
- Publication number
- CN101386402B CN101386402B CN200810201309.1A CN200810201309A CN101386402B CN 101386402 B CN101386402 B CN 101386402B CN 200810201309 A CN200810201309 A CN 200810201309A CN 101386402 B CN101386402 B CN 101386402B
- Authority
- CN
- China
- Prior art keywords
- infrared detectors
- metal electrode
- detector
- sensitive material
- release guard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of Infrared Detectors and manufacture method thereof, relate to the manufacturing process technology field of Infrared Detectors.A kind of infrared detector structure provided by the invention comprises silicon substrate, stack gradually detector sacrifice layer, release guard and supporting layer on a silicon substrate, metal electrode and detector sensitive material; wherein; detector sensitive material is formed at surface of metal electrode and the release guard do not covered by metal electrode and support layer surface, or is covered in release guard and support layer surface and is filled between adjacent metal electrode.Compared with prior art, Infrared Detectors provided by the invention and manufacture method thereof, detector sensitive material is deposited again after having made metal electrode, decrease the damage of subsequent technique to detector sensitive material, and the short circuit between metal electrode can be avoided, correspondingly can improve the performance of this Infrared Detectors, yield rate and reliability.
Description
Technical field
The present invention relates to the manufacturing process of Infrared Detectors, specifically, relate to a kind of Infrared Detectors and manufacture method thereof.
Background technology
Microelectromechanical systems (Micro-Electro-Mechanical System, MEMS) technology have small, intelligent, can perform, the plurality of advantages such as accessible site, processing compatibility are good, cost is low, therefore it has started to be widely used in the numerous areas comprising infrared detection technique field.Infrared Detectors is a kind of MEMS product applied in infrared detection technique field widely, it utilizes detector sensitive material (being generally non-crystalline silicon or vanadium oxide) absorb infrared ray and convert it into the signal of telecommunication, realize thermal imaging function accordingly, it can be used for the safety detection of electric power networks, the detection of forest fire alarm and the detection of human body temperature and other places.
In Infrared Detectors, the quality of quality on Infrared Detectors of detector sensitive material and metal electrode has extremely important impact.Prior art is when manufacturing Infrared Detectors; first deposit detector sacrifice layer on a silicon substrate successively by chemical vapor deposition method (CVD); release guard and supporting layer; and detector sensitive material; then depositing metal layers on this detector sensitive material; then make metal electrode figure by lithography, then by wet method or dry etch process the metal level that sensitive material detecting layer does not have photoresist to protect removed and form metal electrode.Above-mentioned direct depositing metal layers on detector sensitive material also forms the technique of metal electrode because directly etching on detector sensitive material by photoetching and etching technics, etching injury or pollution can be formed on this detector sensitive material, these pollute or damage can produce harmful effect to the quality of Infrared Detectors, such as its uniformity, sensitivity can reduce greatly, produce short circuit between metal electrode.
It should be noted that; when manufacturing Infrared Detectors; also comprise and remove sacrificial layer material to form the step of half unsettled micro-bridge structure by release process; this micro-bridge structure is by support layer supports; therefore release guard and supporting layer all have very important effect for this step and whole infrared detector structure; when specifically making, double-layer structure can be adopted respectively as release guard layer and supporting layer, a Rotating fields also can be adopted simultaneously to realize the effect of release guard and support.But the manufacturing process about micro-bridge structure and release guard and supporting layer is not emphasis of the present invention, therefore does not do further expansion at this.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of Infrared Detectors and manufacture method thereof, affects the quality of Infrared Detectors to avoid when manufacturing Infrared Detectors damage or pollution detection device sensitive material.
For solving the problems of the technologies described above; the invention provides a kind of Infrared Detectors; comprise silicon substrate, be formed at detector sacrifice layer, release guard and supporting layer on silicon substrate successively, and the metal electrode be formed at successively on release guard and supporting layer and detector sensitive material.Wherein, described detector sensitive material is formed at surface of metal electrode and the release guard do not covered by metal electrode and support layer surface, or described detector sensitive material is covered in release guard and support layer surface and is filled between adjacent metal electrode.
Correspondingly, present invention also offers a kind of Infrared Detectors manufacture method, it comprises the following steps: 1) make detector sacrifice layer on a silicon substrate; 2) on detector sacrifice layer, supporting layer is made; 3) on supporting layer, deposition prepares metal level; 4) on described metal level, photoresist is coated with and chemical wet etching goes out metal electrode; 5) in the device architecture surface deposition detector sensitive material that step 4 completes.
Compared with prior art, a kind of Infrared Detectors provided by the invention and manufacture method thereof, first make metal electrode, and realize it graphically by chemical wet etching, and then deposit detector sensitive material.Because detector sensitive material has made the chemical wet etching operation that can not experience metal electrode afterwards again, thus subsequent technique is greatly reduced to the etching injury of detector sensitive material and pollution, and the short circuit between metal electrode can be avoided, correspondingly greatly can improve the performance of this Infrared Detectors, yield rate and reliability.
Accompanying drawing explanation
Fig. 1 is the structure sectional view of the Infrared Detectors of first embodiment of the invention.
Fig. 2 is the metal electrode of the Infrared Detectors of first embodiment of the invention, the flow chart of detector sensitive material layer manufacturing method.
Fig. 3 has been the structure sectional view of Infrared Detectors after step S3 in Fig. 2.
Fig. 4 has been the structure sectional view of Infrared Detectors after step S4 in Fig. 2.
Fig. 5 is the structure sectional view of the Infrared Detectors of second embodiment of the invention.
Detailed description of the invention
Be described in detail, to understanding technical scheme of the present invention, object and beneficial effect further below in conjunction with the preferred embodiment of accompanying drawing to a kind of Infrared Detectors provided by the invention and manufacture method thereof.
First embodiment
Fig. 1 is the sectional view of Infrared Detectors of the present invention.Infrared Detectors comprises: silicon substrate 1, detector sacrifice layer 2, release guard and the supporting layer 3 be sequentially laminated on silicon substrate 1, metal electrode 40, sensitive material detecting layer 5.Wherein detector sacrifice layer 2 is porous silicon or non-crystalline silicon sacrifice layer or silica (SiO2), detector sensitive material 5 is non-crystalline silicon or vanadium oxide or other materials, release guard and supporting layer 3 can be silica (SiO2), silicon oxynitride (SiON), silicon nitride (SiN), carborundum (SiC) or other are based on silicon (Si), oxygen (O), carbon (C), the dielectric film of nitrogen (N) or other compositions, also can be the above-mentioned film of non-stoichiometric, the silica of such as oxygen enrichment or Silicon-rich, also can be and be mixed with boron (B), phosphorus (P), the above-mentioned film of carbon (C) or other elements, such as fluorine silex glass (FSG), boron-phosphorosilicate glass (BPSG) or phosphorosilicate glass (PSG) etc.
Refer to Fig. 1 and composition graphs 2, Fig. 2 is the Infrared Detectors manufacture method flow chart shown in Fig. 1.Infrared Detectors manufacture method of the present invention comprises the following steps:
Step S1, makes detector sacrifice layer 2 on a silicon substrate.In the present embodiment, described detector sacrifice layer 2 is polyimides (polymide) or silicon (Si) or silica (SiO2), it is made by coating or chemical vapor deposition method (CVD), and is discharged by chemical etching process.
Step S2, detector sacrifice layer 2 makes release guard and supporting layer 3.Described release guard and supporting layer 3 are by ald (ALD), low-pressure chemical vapor deposition (LPCVD), plasma reinforced chemical vapour deposition (PECVD), aumospheric pressure cvd (APCVD), sub-aumospheric pressure cvd (SACVD), the preparation of high density plasma CVD (HDPCVD) technique.In the present embodiment, this release guard and supporting layer 3 adopt double-layer structure to realize, and wherein, release guard layer is silica, and supporting layer is silicon nitride.
Step S3, prepares metal level 4 by deposited by physical vapour deposition (PVD), and described metal level 4 can be titanium, tantalum, titanium nitride, tantalum nitride, the titanium nitride of stacked on top of one another and the tantalum of titanium or stacked on top of one another and tantalum nitride.In the present embodiment, described metal level 4 is titanium nitride and the titanium of stacked on top of one another.Device architecture after completing steps S3 refers to Fig. 3.
Step S4, described metal level 4 is coated with photoresist and chemical wet etching goes out described metal electrode 40.Its metal electrode etching technics is parked on release guard and supporting layer 3; metal electrode 40 is greater than a preset security value with the etching selection ratio of release guard and supporting layer 3; described preset security value is 10, this by etching gas be argon gas (Ar), the dry plasma etch technique of fluoroform (CHF3), boron chloride (BCl3) or chlorine (Cl2) etches described metal electrode.In the present embodiment, the dry plasma etch technique being argon gas by etching gas etches described metal electrode 4.
See Fig. 4, and combine the structure showing the Infrared Detectors after completing steps S4 see Fig. 3, Fig. 4, as shown in the figure, patterned metal electrode 40 is positioned on release guard and supporting layer 3.
Step S5; on metal electrode 40 and the release guard do not covered by metal electrode 40 and supporting layer 3 surface; make detector sensitive material 5 by chemical vapor deposition method, described chemical vapor deposition method can be ALD, LPCVD, PECVD, APCVD, SACVD or HDPCVD.In the present embodiment, detector sensitive material 5 is the non-crystalline silicon of boron-doping.
See Fig. 1, and combine the structure showing the Infrared Detectors after completing steps S5 see Fig. 3 and Fig. 4, Fig. 1, as shown in the figure, detector sensitive material 5 is positioned on the metal electrode 40 graphically.
Second embodiment
The manufacture method of the present embodiment and the difference of the first embodiment are; after step S5; namely on the infrared detector structure basis shown in Fig. 1, a step is added: removal unit detector-dividing sensitive material, to expose metal electrode 40 or release guard and supporting layer 3 or sacrifice layer 2.
Detector sensitive material remove number according to technique need and determine; if only metal electrode 40 need be exposed; then only need on the infrared detector structure basis shown in Fig. 1; the detector sensitive material covered on metal electrode 40 is etched away; and planarization in addition; complete the infrared detector structure figure after making as shown in Figure 5, this detector sensitive material 5 ' be covered in release guard and supporting layer 3 surface and be filled between adjacent metal electrode 40.If need to expose release guard and supporting layer 3; as long as then the detector sensitive material of corresponding part is etched away; as sacrifice layer 2 need be exposed further, then continue release guard and the supporting layer 3 of etching corresponding part, thus obtain required panel detector structure.
From foregoing description, a kind of Infrared Detectors provided by the invention and manufacture method thereof, before the making step of metal electrode being put into the deposition step of detector sensitive material, subsequent technique so can be avoided to damage or pollution detection device sensitive material, and avoid the short circuit between electrode, greatly can improve the performance of Infrared Detectors, yield rate and reliability simultaneously.
It should be noted that, the Infrared Detectors described in the present invention can be non-refrigeration type Infrared Detectors or refrigeration-type Infrared Detectors.
Claims (14)
1. an Infrared Detectors manufacture method, is characterized in that, comprises the following steps:
1) detector sacrifice layer is made on a silicon substrate;
2) on detector sacrifice layer, release guard and supporting layer is made;
3) on release guard and supporting layer, deposition prepares metal level;
4) on described metal level, photoresist is coated with and chemical wet etching goes out metal electrode;
5) in the device architecture surface deposition detector sensitive material that step 4 completes;
Wherein, described detector sensitive material is formed at surface of metal electrode and the release guard do not covered by metal electrode and support layer surface, can not experience the chemical wet etching operation of metal electrode after described detector sensitive material has made again.
2. Infrared Detectors manufacture method as claimed in claim 1, is characterized in that, in described step 1, makes detector sacrifice layer on a silicon substrate, is made by coating or chemical vapor deposition method, and is discharged by chemical etching process.
3. Infrared Detectors manufacture method as claimed in claim 1; it is characterized in that; in described step 2, release guard and supporting layer are by ald, low-pressure chemical vapor deposition, plasma reinforced chemical vapour deposition, aumospheric pressure cvd, sub-aumospheric pressure cvd, the preparation of high density plasma CVD technique.
4. Infrared Detectors manufacture method as claimed in claim 1, it is characterized in that, in described step 3, metal level is titanium, tantalum, titanium nitride, tantalum nitride, the titanium nitride of stacked on top of one another and the tantalum of titanium or stacked on top of one another and tantalum nitride.
5. Infrared Detectors manufacture method as claimed in claim 1, it is characterized in that, in described step 4, the dry plasma etch technique being argon gas, fluoroform, boron chloride or chlorine by etching gas etches described metal electrode.
6. Infrared Detectors manufacture method as claimed in claim 1, it is characterized in that, in described step 4, metal electrode etching technics stops on release guard and supporting layer.
7. Infrared Detectors manufacture method as claimed in claim 1, it is characterized in that, in described step 4, the etching selection ratio of metal electrode and release guard and supporting layer is greater than a preset security value.
8. Infrared Detectors manufacture method as claimed in claim 7, it is characterized in that, described preset security value is 10.
9. Infrared Detectors manufacture method as claimed in claim 1, is characterized in that, also comprises step 6: removal unit detector-dividing sensitive material after described step 5, to expose metal electrode or release guard and supporting layer or sacrifice layer.
10. an Infrared Detectors; Infrared Detectors manufacture method as claimed in claim 1 is utilized to be formed; described Infrared Detectors comprises silicon substrate and is formed at detector sacrifice layer, release guard and the supporting layer on silicon substrate successively; it is characterized in that; described Infrared Detectors also comprises and is formed at metal electrode on release guard and supporting layer and detector sensitive material successively, and described detector sensitive material is formed at surface of metal electrode and the release guard do not covered by metal electrode and support layer surface.
11. Infrared Detectors as claimed in claim 10, is characterized in that, described detector sensitive material is covered in release guard and support layer surface and is filled between adjacent metal electrode.
12. Infrared Detectors as claimed in claim 10, it is characterized in that, described release guard and supporting layer are silica, silicon oxynitride, silicon nitride, carborundum, or doped with the above-mentioned material of boron, phosphorus, carbon or fluorine element.
13. Infrared Detectors as claimed in claim 10, is characterized in that, described detector sacrifice layer is porous silicon or non-crystalline silicon sacrifice layer or silicon dioxide layer.
14. Infrared Detectors as claimed in claim 10, it is characterized in that, described detector sensitive material is non-crystalline silicon or vanadium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810201309.1A CN101386402B (en) | 2008-10-16 | 2008-10-16 | A kind of Infrared Detectors and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810201309.1A CN101386402B (en) | 2008-10-16 | 2008-10-16 | A kind of Infrared Detectors and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101386402A CN101386402A (en) | 2009-03-18 |
| CN101386402B true CN101386402B (en) | 2015-08-12 |
Family
ID=40476110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810201309.1A Active CN101386402B (en) | 2008-10-16 | 2008-10-16 | A kind of Infrared Detectors and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101386402B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353459B (en) * | 2011-07-05 | 2016-01-27 | 上海集成电路研发中心有限公司 | Detector and manufacture method thereof |
| CN102963860B (en) * | 2012-11-01 | 2016-04-06 | 上海集成电路研发中心有限公司 | The manufacture method of infrared detector with micro-bridge structure |
| CN109132994A (en) * | 2018-07-11 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | MEMS electrode microbridge forming method |
| CN109399552B (en) * | 2018-11-27 | 2024-04-02 | 苏州锐杰微科技集团有限公司 | Manufacturing method of micro-electro-mechanical system infrared detector |
| CN111960377B (en) * | 2020-07-29 | 2024-03-15 | 上海集成电路研发中心有限公司 | Manufacturing method of micro-bridge deck of MEMS sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819291A (en) * | 2005-12-29 | 2006-08-16 | 中国科学院上海微系统与信息技术研究所 | Production of micromechanical infrared detector array based on double material effect |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101460816B (en) * | 2006-05-25 | 2011-07-13 | 松下电工株式会社 | Infrared sensor |
| CN101183690B (en) * | 2007-12-13 | 2012-10-10 | 上海集成电路研发中心有限公司 | Infrared detector and method of producing the same |
| CN101246055A (en) * | 2008-03-13 | 2008-08-20 | 电子科技大学 | Lithium tantalate thin film infrared detector and manufacturing method |
-
2008
- 2008-10-16 CN CN200810201309.1A patent/CN101386402B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819291A (en) * | 2005-12-29 | 2006-08-16 | 中国科学院上海微系统与信息技术研究所 | Production of micromechanical infrared detector array based on double material effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101386402A (en) | 2009-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101445215B (en) | Infrared receiver and manufacturing method thereof | |
| CN102353459B (en) | Detector and manufacture method thereof | |
| CN101183690B (en) | Infrared detector and method of producing the same | |
| CN102169919B (en) | Detector and manufacture method thereof | |
| CN101386402B (en) | A kind of Infrared Detectors and manufacture method thereof | |
| CN105424199B (en) | A kind of the infrared detector unit structure and manufacturing method of difference output | |
| CN105185803B (en) | Back-illuminated type mixing imaging detector pixel structure and preparation method thereof | |
| US20090140148A1 (en) | Bolometer and method of manufacturing the same | |
| US9758370B2 (en) | Monolithic CMOS-MEMS microphones and method of manufacturing | |
| JP7030422B2 (en) | A device for detecting electromagnetic radiation having an enclosed structure including at least one interference filter. | |
| JP2006226890A (en) | Thermal infrared detection element | |
| CN106298827A (en) | A kind of non-refrigerated infrared focal plane probe pixel and preparation method thereof | |
| CN102086016B (en) | MEMS micro-bridge structure and manufacture method thereof | |
| CN105185802A (en) | Single-chip visible-light infrared hybrid imaging detector pixel structure and preparation method thereof | |
| CN102683475A (en) | Manufacturing method of infrared detector based on temporary release protective layer | |
| CN105206637A (en) | Hybrid imaging detector pixel structure with step supports and preparation method of hybrid imaging detector pixel structure | |
| US5930594A (en) | Method of manufacturing rigid floating microstructure elements and a device equipped with such elements | |
| CN101419092A (en) | Pyroelectric infrared detector for planarization thermal isolation structure and method for making same | |
| EP3635351B1 (en) | Microelectromechanical (mems) fabry-perot interferometer, apparatus and method for manufacturing fabry-perot interferometer | |
| EP3050105B1 (en) | Semiconductor bolometer and method of fabrication thereof | |
| CN101913550B (en) | The manufacture method of microbridge structure of micro-electromechanical system | |
| US11878906B2 (en) | Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device | |
| CN102092671B (en) | The manufacture method of smooth sacrifice layer and MEMS micro-bridge structure | |
| CN102942158B (en) | The manufacture method of detecting structure | |
| CN109824008B (en) | Uncooled infrared focal plane detector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 310053 No. 639, bin Kang Road, Hangzhou, Zhejiang, Binjiang District Co-patentee after: Shanghai integrated circuit research and Development Center Co., Ltd. Patentee after: Zhejiang Dali Science and Technology Co., Ltd. Address before: Shanghai city B District 201203 Bibo Road, Zhangjiang hi tech Park No. 177 Huahong Science Park Building 4 Co-patentee before: Zhejiang Dali Science and Technology Co., Ltd. Patentee before: Shanghai integrated circuit research and Development Center Co., Ltd. |
|
| CP03 | Change of name, title or address |