CN101373884B - Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar - Google Patents
Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 42
- 239000011247 coating layer Substances 0.000 claims description 28
- 238000007689 inspection Methods 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract 4
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 238000002372 labelling Methods 0.000 description 12
- 101100406879 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) par-2 gene Proteins 0.000 description 6
- 238000005259 measurement Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- Physics & Mathematics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
A first conductivity type cladding layer, an active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth. The second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. A plurality of columns of the ridge structure portions that are aligned in the longitudinal direction of the ridge structure portions at predetermined intervals are arranged. The arrangement is such that each of the columns is displaced from the adjacent column in the longitudinal direction of the ridge structure portions so that an end portion of each of the ridge structure portions and an end portion of the adjacent ridge structure portion overlap each other in the longitudinal direction of the ridge structure portions. A region where the end portion of each of the ridge structure portions and the end portion of the adjacent ridge structure portion overlap each other is cleaved. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of the resonator length is within the tolerance in a simple manner.
Description
Invention field
The present invention relates to a kind of semicondcutor laser unit manufacture method of the precision that is used for improving resonator length and the semiconductor laser bar inspection method of manufacturing process thereof.
Background technology
In recent years, in the various fields headed by the videodisc player, be that the DVD record-playback of feature is popularized fast with driver with the large storage capacity.In addition, can be undertaken by identical equipment always by CD, CD-R and the reading also of CD-RW of utilization in the past for the strong expectation of people.Therefore, general except the 650nm wave band red laser diode that DVD uses as the light picker light source that is used in DVD and CD record, reproduces, the 780nm wave band infrared semiconductor laser that also uses CD to use simultaneously.
The record reproducing device of DVD etc. need make its miniaturization and thin typeization along with the miniaturization of messaging devices such as personal computer.In order to realize this target, the miniaturization of light picker and thin typeization are essential.In order to realize the miniaturization and the thin typeization of light picker, effectively reduce optics device is oversimplified.As a method of oversimplifying, can enumerate red laser diode and the integrated method of infrared semiconductor laser.
Reduce such viewpoint from the miniaturization, parts number of packages of device, red laser diode and infrared semiconductor laser monolithic (monolithic) 2 long wavelength semiconductor lasers after integrated on the same semiconductor substrate are produced in batches in recent years.Thus, just semiconductor laser itself can not concentrated in the parts, can also make the optics of collimating lens and beam splitter etc. shared between red laser diode and infrared semiconductor laser, be effective to miniaturization, the thin typeization of installing.
In addition in recent years, people also require the record that writes under the high power speed, have proposed a kind of monolithic 2 long wavelength lasers (for example, referring to TOHKEMY 2001-345514 communique) of realizing the action of the laser under the high-power output.
In addition, follow the high-power outputization of semiconductor laser, for the thermal diffusivity that makes laser chip is improved, the resonator of seeking to extend as optical waveguide.For example, in the semiconductor laser of 650nm wave band, it is generally acknowledged,, need the above resonator length of 1000 μ m in order to guarantee the light output of 200mW super large.
But along with the lengthening of the resonator of semiconductor laser, the influence that the rotation error when pedestal (sub-mount) is assembled etc. is brought to light shaft offset further increases.In addition, the amplitude of fluctuation of coherence length also increases.Thereby, when advancing long resonator, need to reduce the deviation of resonator length itself.
Generally speaking, when making semiconductor laser, for the semiconductor laser wafer-separate that will have banded light-emitting zone is a strip, by and the direction of band direction quadrature on wafer surface, form line.Next, along line wafer is applied load, making it to split is bar state.Also have, when forming 650nm wave band semiconductor laser the general inclination substrate cracking method that uses for example publicity in Japanese kokai publication hei 09-266347 communique.
Utilize the formed parting plane in above-mentioned laser strip two ends to be used as mirror, the distance between mirror is a resonator length.Thereby the deviation of resonator length is by the deviation that produces in the operation of splitting---for example the deviation of the deviation of wafer crystallization direction or line etc. decides.The measurement of resonator length uses light microscope or SEM measuring appliances such as (sweep electron microscopes) to carry out after the operation of splitting.
But, adopt above-mentioned resonator length method of measurement in the past, because will measure,, in manufacturing process, need cost and time so total Measuring Time is elongated to each chip.In addition, elongated corresponding to resonator length with regard to utilizing microscopical method of measurement, need to enlarge field of view, its result is the worry that exists measure error to increase.
Summary of the invention
In view of above-mentioned problem, purpose of the present invention is, a kind of manufacture method of semicondcutor laser unit and the inspection method of the semiconductor laser bar in the manufacturing process thereof are provided, can adopt simple method that each chip is differentiated the deviation of resonator length whether in allowed band.
The manufacture method of the present invention's half semicondcutor laser unit, it is characterized by, on semiconductor substrate, make coating layer, active layer, the 1st coating layer of the 2nd conductivity type and the 2nd coating layer of the 2nd conductivity type of the 1st conductivity type carry out crystal growth successively, the 2nd coating layer to above-mentioned the 2nd conductivity type is processed, form banded a plurality of ridge structure portion, with the direction of the length direction quadrature of above-mentioned ridge structure portion on split, form laser strip.In order to solve above-mentioned problem, will arrange the row after the above-mentioned ridge structure portion separating the interval of appointment on the length direction of above-mentioned ridge structure portion, devices spaced apart is arranged a plurality of on the direction vertical with the length direction of above-mentioned ridge structure portion; Above-mentioned row and on the length direction vertical direction of above-mentioned ridge structure portion the row of institute's adjacency, on the length direction of above-mentioned ridge structure portion, stagger, so that the other end of the end of above-mentioned ridge structure portion and the ridge structure portion of institute's adjacency on the direction vertical with the length direction of above-mentioned ridge structure portion, on the length direction of above-mentioned ridge structure portion, overlap each other, split in the equitant zone, end of the ridge structure portion of the end of above-mentioned ridge structure portion and above-mentioned adjacency.
The inspection method of semiconductor laser bar of the present invention splitting in the manufacture method of semicondcutor laser unit carried out after the operation, and configuration, the shape of residual above-mentioned ridge structure portion come predicting shape bad on the part after splitting by observation.
Description of drawings
Figure 1A is the plane graph of the related semiconductor laser bar structure of expression embodiment of the present invention.
Figure 1B is the A-A ' profile of the related semiconductor laser bar structure of expression embodiment of the present invention.
Fig. 1 C is the B-B ' profile of the related semiconductor laser bar structure of expression embodiment of the present invention.
Fig. 2 A is the plane graph of the related semicondcutor laser unit manufacturing process of expression embodiment of the present invention.
Fig. 2 B is the C-C ' profile of the related semicondcutor laser unit manufacturing process of expression embodiment of the present invention.
Fig. 2 C is the D-D ' profile of the related semicondcutor laser unit manufacturing process of expression embodiment of the present invention.
Fig. 3 A is the plane graph of the operation after the presentation graphs 2A.
Fig. 3 B is C-C ' profile of Fig. 3 A.
Fig. 3 C is D-D ' profile of Fig. 3 A.
Fig. 4 is the plane graph of the state after the related semiconductor laser bar of expression embodiment of the present invention splits.
Fig. 5 is the plane graph of the related state of semiconductor laser bar after splitting on other position of expression embodiment of the present invention.
Fig. 6 is the plane graph of the related state of semiconductor laser bar after splitting on other position of expression embodiment of the present invention.
Embodiment
The manufacture method of semicondcutor laser unit of the present invention will separate the interval of appointment and row after arranging ridge structure portion on the length direction of ridge structure portion, devices spaced apart is arranged a plurality of on the direction vertical with the length direction of ridge structure portion; These row and on the length direction vertical direction of ridge structure portion the row of institute's adjacency, on the length direction of ridge structure portion, stagger, so that the other end of the end of ridge structure portion and the ridge structure portion of institute's adjacency on the direction vertical with the length direction of ridge structure portion overlaps each other on the length direction of ridge structure portion; Split in the equitant zone, end of the ridge structure portion of the end of ridge structure portion and adjacency.
In addition, carry out after the operation of splitting of the inspection method of semiconductor laser bar of the present invention in the manufacture method of semicondcutor laser unit.Configuration, the shape of residual above-mentioned ridge structure portion come predicting shape bad on the part after splitting by observation.
The manufacture method of semicondcutor laser unit of the present invention and the inspection method of semicondcutor laser unit can be taked following the whole bag of tricks with said structure as basic.
That is to say, in the manufacture method of above-mentioned semicondcutor laser unit, also can be after forming above-mentioned ridge structure portion, on the end regions of above-mentioned ridge structure portion, form current barrier layer to cover the 2nd coating layer of above-mentioned the 2nd conductivity type.
In addition, above-mentioned current barrier layer also can contain the semiconductor layer of the 1st conductivity type.
In addition, above-mentioned current barrier layer also can be to contain Si, SiN
x, SiO
2, TiO
2, Ta
2O
5, NbO
xThe perhaps monofilm of amorphous silicon hydride, or above-mentioned monofilm is by the deielectric-coating after lamination is more than 2 layers.
In addition, the deviation allowed band of the length in the resonator that forms that splits by above-mentioned ridge structure portion is during for ± A, and the length that the end of the end of above-mentioned ridge structure portion and the ridge structure portion of adjacency on the direction vertical with the length direction of above-mentioned ridge structure portion is overlapped each other is made as A/2.
In addition, in the inspection method of above-mentioned semiconductor laser bar also can be, if at least one in the part after above-mentioned the splitting at two ends, the not residual part that the ridge structure portion of adjacency on the direction vertical with the length direction of above-mentioned ridge structure portion is arranged then is judged as bad.
In addition, also can utilize the inspection of above-mentioned semiconductor laser bar inspection method, and if make semicondcutor laser unit vibration not produce vibration then be judged as bad characteristic check.
Below, for the related semicondcutor laser unit of embodiment of the present invention, its manufacture method and inspection method, one side simultaneously describes with reference to accompanying drawing.
(execution mode)
The plane graph of the semiconductor laser bar 1 of Figure 1A is the related formation of expression embodiment of the present invention a plurality of semicondcutor laser units 8, Figure 1B is the amplification profile along A-A ' line of Figure 1A, Fig. 1 C is the amplification profile along B-B ' line of Figure 1A.Shown in Figure 1A, on semiconductor laser bar 1, comprise par 2 and ridge structure portion 5.This laser strip 1 its one group of relative end face (the 1st end face 6 and the 2nd end face 7) forms by splitting.In ridge structure portion 5, comprise the labeling section 4 that is used for producing the resonator 3 of laser generation and is used for detecting resonator 3 length.Resonator 3 forms till the 1st end face 6 plays the 2nd end face 7, and has split on the part of the 1st end face 6 and the 2nd end face 7, and length (resonator length) for example is 1000 μ m.Labeling section 4 is parallel with resonator 3, be respectively formed at the 1st end face 6 and the 2nd end face 7 near.
Shown in Fig. 1 C, laser strip 1 has had the structure of semiconductor substrate 11, resilient coating 12, n type coating layer (coating layer of the 1st conductivity type) 13, active layer 14, p type the 1st coating layer (the 1st coating layer of the 2nd conductivity type) 15 and etch stopper 16 stacked in order.In ridge structure portion 5, comprise the laminated body of p type the 2nd coating layer (the 2nd coating layer of the 2nd conductivity type) 17, p type intermediate layer 18 and p type contact layer 19.
P type the 2nd coating layer 17 adopts p type (Al
xGa
1-x)
yIn
1-yP (0＜x＜1,0＜y＜1) constitutes, and is formed on the etch stopper 16.P type intermediate layer 18 adopts p type GaInP to form.P type contact layer 19 adopts p type GaAs to form.Current barrier layer 20 is formed by the semiconductor of n type.N lateral electrode 22 is formed on the back side of semiconductor substrate 11.
Also have, the x of n type coating layer 13, p type the 1st coating layer 15 and p type the 2nd coating layer 17, y for example can use the value of x=0.7, y=0.5.
Below, the manufacture method for semicondcutor laser unit in the present embodiment 8 describes.Fig. 2～Fig. 4 is the accompanying drawing of each operation of manufacture method of expression semicondcutor laser unit 8.Also have, semiconductor laser bar 1 because near end face and central area (gain regions) go up section shape and produce difference, thereby will represent that the profile of this each operation is divided near and the gain regions of resonator end face, separates expression.That is to say, Fig. 2 A and Fig. 3 A represent the plane graph of semiconductor laser bar 1 in manufacturing process's process, the profile (profile of gain regions) of C-C ' direction of Fig. 2 B and Fig. 3 B difference presentation graphs 2A and Fig. 3 A, the profile (near the profiles resonator 3 end faces) of D-D ' direction of Fig. 2 C and Fig. 3 C difference presentation graphs 2A and Fig. 3 A.Fig. 4 is the plane graph that expression makes the state after splitting along striping 31 in par 2.
At first, shown in Fig. 2 B and Fig. 2 C, on semiconductor substrate 11, utilize chemical vapor deposition method (mocvd method) to stack gradually resilient coating 12, n type coating layer 13, active layer 14, p type the 1st coating layer 15, etch stopper 16, p type the 2nd coating layer 17, p type intermediate layer 18 and p type contact layer 19.Dotted line among Fig. 2 A represents for the operation by after this forms the 1st end face 6 or the 2nd end face 7, the predetermined line that splits (below, be called striping) 31.In Fig. 2 A, the 1st regional 32a, the 2nd regional 32b, the 3rd regional 32c are respectively the zones by striping 31 defineds.
Next, on p type contact layer 19, form SiO
2Film, and form by utilizing photoetching technique and dry-etching technology to carry out pattern, shown in Figure 1A as the zone of ridge structure portion 5 on form the mask pattern 33a～33c of belt shape.The last formed SiO of each regional 32a～32c
2Mask is respectively 1SiO
2Mask 33a, 2SiO
2Mask 33b and 3SiO
2Mask 33c.In addition, form SiO
2 Film 33 so that the ridge structure portion of the 1st 5a of ridge structure portion and the 3rd regional 32c (the 3rd 5c of ridge structure portion) and the 2nd 5b of ridge structure portion, on the direction vertical with the length direction of the 2nd 5b of ridge structure portion for example away from 10 μ m.On the 1st regional 32a, the 2nd regional 32b and the 3rd regional 32c, because same respectively formation semiconductor laser bar 1, thereby below the relevant the 2nd regional 32b is elaborated.
2SiO
2Mask 33b is formed at 31 of the stripings of the 2nd regional 32b, and extends to form on the 1st regional 32a and the 3rd regional 32c, makes it to stride across striping 31.In addition, near the 2nd regional 32b striping 31 separately, with 2SiO
2Mask 33b is parallel, forms the 1SiO that extends respectively from the 1st regional 32a and the 3rd regional 32c
2Mask 33a and 3SiO
2Mask 33c.1SiO
2Mask 33a and 3SiO
2Mask 33c is formed on the straight line, is the dotted line shape that disconnects on the 2nd regional 32b.Also has 2SiO
2Mask 33b also with 1SiO
2Mask 33a and 3SiO
2Mask 33c is identical, is the dotted line shape that disconnects on the 1st regional 32a and the 3rd regional 32c with respect to length direction.
Form 2SiO
2Mask 33b, with the deviation allowed band of length in resonator 3 be ± during A, the length that extends on the 1st regional 32a and the 3rd regional 32c is respectively A/4.That is to say 2SiO
2Mask 33b and 1SiO
2The length that the end of mask 33a overlaps each other with respect to the direction with the length direction quadrature is A/2.Particularly, in allowed band be ± during 10 μ m, it forms from 1SiO
2Mask 33a and 3SiO
2Mask 33c extends to 2SiO
2The length of mask 33b is respectively 2.5 μ m.
Next, utilize this mask pattern, shown in Fig. 3 B and Fig. 3 C, p type contact layer 19, p type intermediate layer 18 and p type the 2nd coating layer 17 are carried out etching, regulation ridge structure portion 5.As shown in Figure 3A, by 1SiO
2Mask 33a, 2SiO
2Mask 33b and 3SiO
2The part that mask 33c is covered is respectively the 1st 5a of ridge structure portion, the 2nd 5b of ridge structure portion and the 3rd 5c of ridge structure portion.Ridge structure portion 5 forms in the longitudinal direction staggers, and the other end of the ridge structure portion 5 of its end and adjacency is with respect to the direction vertical with length direction, and a part is overlapping.
Also have, in the present embodiment, in order to form ridge structure portion 5, can and implement with the dry-etching and the Wet-type etching that have used inductance coupling high type plasma for example or reactive ion plasma.
Next, will be as the employed SiO of mask
2Film 33 is removed.Next, though omitted diagram, on the side of ridge structure portion 5 and etch stopper 16, form current barrier layer 20.At this moment, in ridge structure portion 5,, the presumptive area (end regions) of the portion of serving as a mark 4 is not then covered, and formed current barrier layer 20 covering as the presumptive area of resonator 3.Here, so-called end regions, owing to stipulate before the operation of will splitting below, thereby in fact be not limited to the part of the portion of serving as a mark 4, refer to certain zone that two ends of the ridge structure portion 5 before split the begin A/4 zone of two ends (for example, since).Since form as stated above, thereby do not producing on the labeling section 4 of vibration as semiconductor laser, the idle current that do not flow, and can prevent unnecessary heating.Next, on current barrier layer 20 and p type contact layer 19, form p lateral electrode 21, and on the back side of semiconductor substrate 11, form n lateral electrode 22.
Next, par 2 and ridge structure portion 5 are split along striping 31.Split and adopt the general method of using, that is to say with the direction of the length direction quadrature of ridge structure portion 5 on, on 2 surfaces, par, form line, along line wafer is loaded.
By operation as above, just can make semiconductor laser bar 1.Because make semiconductor laser bar 1 as stated above, so when splitting, the two end portions of the 1st 5a of ridge structure portion and the 3rd 5c of ridge structure portion end sections remaines in the par 2 of the 2nd regional 32b respectively, the portion 4 that serves as a mark plays a role.
Below, for resonator length that after splitting, carry out, resonator 3 the inspection method in allowed band whether, describe.At first, judge on the semiconductor laser bar 1 of the 2nd regional 32b, whether exist respectively from the 1st 5a of ridge structure portion, the 3rd 5c of ridge structure portion and extend formed labeling section 4.
Fig. 4 is that expression is split so that the plane graph of the state of resonator length after in allowed band par 2 and ridge structure portion 5.At this moment, on the 2nd regional 32b, near the 1st end face 6 and the 2nd end face 7, there is labeling section 4.This expresses, in two ends of resonator 3 as mentioned above, the error of resonator length is respectively ± 5 μ m in, and the error of resonator length add up to ± 10 μ m in.
Fig. 5 is illustrated in the plane graph when only having labeling section 4 on an end on the semiconductor laser bar 1 of the 2nd regional 32b under the state that makes after par 2 and ridge structure portion 5 split.In this case, because the resonator length of resonator 3 is outside allowed band sometimes, so only on an end, exist the semiconductor laser bar 1 of labeling section 4 to be judged as bad.Also have, when on two ends of semiconductor laser bar 1, not having labeling section 4, also be judged as bad.
Next, be present in the semiconductor laser bar 1 of two ends, whether check streaming current and produce laser generation at labeling section 4.Semiconductor laser bar shown in Figure 41 since resonator length in allowed band, and the two ends of resonator 3 have split and have formed, thereby if flowed electric current, then produce laser generation.On the other hand, though there is labeling section 4 in the semiconductor laser bar 1 shown in Fig. 6 below on two ends, an end of resonator 3 does not split, even if therefore streaming current does not produce laser generation yet.Be judged as the semiconductor laser bar 1 that does not produce vibration bad.
As mentioned above, according to present embodiment, confirm having or not of labeling section 4 by testing fixture, and streaming current makes it to produce laser generation in semiconductor laser bar 1 with light microscope etc., just can be with high accuracy and easily split after the whether inspection in specification of resonator length.Therefore, because it is just passable to carry out the measurement of resonator length, thereby can significantly shorten the review time.In addition, because of the inspection after being assembled in the pick-up etc. causes the ratio of defective products significantly to lower, therefore can reduce the cost greatly.
Also have, for not being judged as bad laser strip by above-mentioned inspection, then disconnect by each resonator, connecting wiring waits and forms semicondcutor laser unit 8.
Though not shown, in the present embodiment, represented that current barrier layer 20 is examples of n type semiconductor layer, but current barrier layer 20 is not limited to this, for example also can be to contain Si, SiN
x, SiO
2, TiO
2, Ta
2O
5, NbO
xThe perhaps monofilm of amorphous silicon hydride etc., or the deielectric-coating of the stacked multilayer film more than 2 of these monofilms.
In addition, present embodiment is self-evident, can use with royal purple laser aid headed by the monolithic multi-wavelength semiconductor device etc. to have in whole semicondcutor laser units of waveguide path.
Claims (7)
1. the manufacture method of a semicondcutor laser unit is characterized by,
On semiconductor substrate, make coating layer, active layer, the 1st coating layer of the 2nd conductivity type and the 2nd coating layer of the 2nd conductivity type of the 1st conductivity type carry out crystal growth successively,
The 2nd coating layer to above-mentioned the 2nd conductivity type is processed, and forms banded a plurality of ridge structure portion,
With the direction of the length direction quadrature of above-mentioned ridge structure portion on split, form laser strip;
In the manufacture method of this semicondcutor laser unit,
To arrange the row after the above-mentioned ridge structure portion separating the interval of appointment on the length direction of above-mentioned ridge structure portion, devices spaced apart is arranged a plurality of on the direction vertical with the length direction of above-mentioned ridge structure portion;
Above-mentioned row and on the length direction vertical direction of above-mentioned ridge structure portion the row of institute's adjacency, on the length direction of above-mentioned ridge structure portion, stagger, so that the other end of the end of above-mentioned ridge structure portion and the ridge structure portion of institute's adjacency on the direction vertical, on the length direction of above-mentioned ridge structure portion, overlap each other with the length direction of above-mentioned ridge structure portion;
Split in the equitant zone, end of the ridge structure portion of the end of above-mentioned ridge structure portion and above-mentioned adjacency.
2. the manufacture method of semicondcutor laser unit as claimed in claim 1 is characterized by,
After the above-mentioned ridge structure of formation portion,
On the end regions of above-mentioned ridge structure portion, form current barrier layer, to cover the 2nd coating layer of above-mentioned the 2nd conductivity type.
3. the manufacture method of semicondcutor laser unit as claimed in claim 2 is characterized by,
Above-mentioned current barrier layer contains the semiconductor layer of the 1st conductivity type.
4. the manufacture method of semicondcutor laser unit as claimed in claim 2 is characterized by,
Above-mentioned current barrier layer is to contain Si, SiN
x, SiO
2, TiO
2, Ta
2O
5, NbO
xThe stacked deielectric-coating after more than 2 layers of the perhaps monofilm of amorphous silicon hydride, or above-mentioned monofilm.
5. the manufacture method of semicondcutor laser unit as claimed in claim 1 is characterized by,
The deviation allowed band of the length in the resonator that forms that splits by above-mentioned ridge structure portion is during for ± A, and the length that the end of the end of above-mentioned ridge structure portion and the ridge structure portion of adjacency on the direction vertical with the length direction of above-mentioned ridge structure portion is overlapped each other is made as A/2.
6. the inspection method of a semiconductor laser bar is carried out after the operation of splitting in the described semicondcutor laser unit manufacture method of claim 1, it is characterized by,
If at least one in the part after splitting, the not residual part that the ridge structure portion of adjacency on the direction vertical with the length direction of above-mentioned ridge structure portion is arranged then is judged as bad.
7. the inspection method of a semiconductor laser bar is characterized by,
Carry out inspection, and if make semicondcutor laser unit vibration not produce vibration then be judged as bad inspection based on the described semiconductor laser bar inspection method of claim 6.
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| JP217393/2007 | 2007-08-23 | ||
| JP2007217393A JP2009054636A (en) | 2007-08-23 | 2007-08-23 | Manufacturing method of semiconductor laser device, and inspection method of semiconductor laser bar |
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| CN101373884B true CN101373884B (en) | 2011-12-07 |
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| CN1574526A (en) * | 2003-05-22 | 2005-02-02 | 松下电器产业株式会社 | Semiconductor laser |
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| US4185256A (en) * | 1978-01-13 | 1980-01-22 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
| JPH0575216A (en) | 1991-09-17 | 1993-03-26 | Furukawa Electric Co Ltd:The | Manufacture of semiconductor laser element |
| JP3027934B2 (en) | 1996-03-27 | 2000-04-04 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| JPH10190150A (en) | 1996-12-19 | 1998-07-21 | Canon Inc | Arrayed semiconductor power unit, its driving method, and wavelength division multiplexing optical transmission system |
| JP3608937B2 (en) | 1998-03-31 | 2005-01-12 | 日本オプネクスト株式会社 | Semiconductor laser |
| JP2001345514A (en) | 2000-06-01 | 2001-12-14 | Toshiba Corp | Semiconductor laser and its manufacturing method |
| JP4539077B2 (en) * | 2003-10-29 | 2010-09-08 | 日本電気株式会社 | Manufacturing method of semiconductor device |
| JP2005294297A (en) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor element |
| JP2005327908A (en) * | 2004-05-14 | 2005-11-24 | Fuji Photo Film Co Ltd | Semiconductor laser element |
| JP2006073851A (en) | 2004-09-03 | 2006-03-16 | Sanyo Electric Co Ltd | Semiconductor laser equipment |
| JP4789558B2 (en) * | 2005-09-22 | 2011-10-12 | パナソニック株式会社 | Multi-wavelength semiconductor laser device |
| US8198639B2 (en) * | 2007-09-03 | 2012-06-12 | Rohm Co., Ltd. | Method of manufacturing light emitting device with a pair of ridge protection electrodes |
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| US20090053838A1 (en) | 2009-02-26 |
| CN101373884A (en) | 2009-02-25 |
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