CN101372311A - High depth-to-width ratio silicon oxide etching technique - Google Patents
High depth-to-width ratio silicon oxide etching technique Download PDFInfo
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- CN101372311A CN101372311A CNA2008102224444A CN200810222444A CN101372311A CN 101372311 A CN101372311 A CN 101372311A CN A2008102224444 A CNA2008102224444 A CN A2008102224444A CN 200810222444 A CN200810222444 A CN 200810222444A CN 101372311 A CN101372311 A CN 101372311A
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Abstract
The invention relates to a high depth-to-width ratio silicon oxide etching technique; an inductive coupling plasma etching system is adopted, reaction gases include C4F8, H2 and He, and the following technical parameters are adopted: 1000-1800W of the power of an ion source, 300-400W of the power of a sheet bearing platform, 4-12mT of the pressure of a reaction chamber, 10-20sccm/min of the flow rate of C4F8, 4-8sccm/min of the flow rate of H2 and 150-200sccm/min of the flow rate of He. The technical proposal of the high depth-to-width ratio silicon oxide etching technique is that: by adjusting a series of important etching technical parameters such as the power of the ion source, the power of the sheet bearing platform, the pressure of the reaction chamber, and the like, the silicon oxide etching speed and selection ratio of etching mask films can significantly enhanced and the etching requirements for side wall verticality can be met.
Description
Technical field
The present invention relates to the lithographic technique field, relate in particular to a kind of high depth-to-width ratio silicon oxide etching technique.
Background technology
In MEMS (Micro Electro Mechanical System, MEMS) technical field, the high-aspect-ratio lithographic technique more and more demonstrates its importance.Since the mid-90, the technical staff is conceived to the research of the deep erosion of silicon materials more and obtains certain breakthrough, thereby the MEMS technology has been pushed ahead major step.Along with the MEMS technology develops to device miniaturization, intellectuality and modern direction, except silicon materials being had demand, the various novel MEMS devices of making basic material with silica, quartz and glass also arise at the historic moment.From market demand situation in recent years, carry out the research of high depth-to-width ratio silicon oxide lithographic technique and will good progradation be arranged the MEMS device research in fields such as inertia device, fiber waveguide device, infrared sensor, novel fuse, biochip, for the process technology basis is established in the industrialization of these devices, simultaneously more novel MEMS device has been developed the critical support effect.The development of MEMS technology is demanded urgently in the research of advanced person's high depth-to-width ratio silicon oxide lithographic technique, and the breakthrough of this technology will develop the generation profound significance to wider, darker direction to the research in MEMS field.
Because the silica etching is compared with silicon etching, there are two significantly differences of physical chemical mechanism and etching system, the realization difficulty of its technology is much larger than silicon etching.The researcher attempts using common RIE (Reactive Ion Etching, reactive ion etching system) or the high-density plasma etching system carry out the silica etching of high-aspect-ratio, what report adopted that the high-density plasma etching system obtains the silica deep etching technology at first is Britain STS company.Basic high depth-to-width ratio silicon oxide lithographic technique AOE (Advanced Oxide Etch had been solidified in the said firm on the equipment of development in 2000, advanced silica etching), in the AOE technology, used special-purpose ICP (Inductively Coupled Plasma, inductively coupled plasma) system, process gas is mainly C
4F
8Gas, mask material adopt photoresist or metal usually.This technology makes realization can repeat, have better uniformity and high mask selects the deep erosion of silica of ratio to become possibility.
With C
4F
8In the etching environment for main etching gas, the technological parameter outstanding to the etch rate influence is ion gun power, wafer-supporting platform power and chamber pressure, within the specific limits, improves the numerical value of these several parameters, etch rate can be obviously improved, but inhomogeneity decline can be caused simultaneously; Simultaneously, the raising of ion gun or wafer-supporting platform power also can strengthen the degree of injury of reaction particle to etching print surface, therefore need find the equalization point of above-mentioned each parameter in the silicon oxide etching technique of high-aspect-ratio.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is to find the relation of etch technological condition and etching parameters, a kind of high depth-to-width ratio silicon oxide etching technique of optimization is provided.
(2) technical scheme
In order to achieve the above object, technical scheme of the present invention proposes a kind of high depth-to-width ratio silicon oxide etching technique, adopt the inductively coupled plasma etching system, and reacting gas comprises C
4F
8, H
2And He, and adopt following technological parameter window:
Ion gun power: 1000-1800W;
Wafer-supporting platform power: 300-400W;
Chamber pressure: 4-12mT;
C
4F
8Flow: 10-20sccm/min;
H
2Flow: 4-8sccm/min;
He flow: 150-200sccm/min.
In the above-mentioned high depth-to-width ratio silicon oxide etching technique, the technological parameter of described employing is specially:
Ion gun power: 1000W;
Wafer-supporting platform power: 300W;
Chamber pressure: 8mT;
C
4F
8Flow: 10sccm/min;
H
2Flow: 8sccm/min;
He flow: 174sccm/min.
In the above-mentioned high depth-to-width ratio silicon oxide etching technique, the technological parameter of described employing is specially:
Ion gun power: 1800W;
Wafer-supporting platform power: 300W;
Chamber pressure: 8mT;
C
4F
8Flow: 10sccm/min;
H
2Flow: 8sccm/min;
He flow: 174sccm/min.
In the above-mentioned high depth-to-width ratio silicon oxide etching technique, the etch mask of this process using is a photoresist.
In the above-mentioned high depth-to-width ratio silicon oxide etching technique, described inductively coupled plasma etching system is the STS AOE 34443 type etching machines of Britain STS company.
(3) beneficial effect
The technical scheme of high depth-to-width ratio silicon oxide etching technique of the present invention, by to comprising the adjustment of a series of important etching technics parameters such as ion gun power, wafer-supporting platform power, chamber pressure, can obviously improve silica etch rate, to etch mask select than and depth-to-width ratio, can satisfy the etching requirement of verticality of side wall simultaneously.
Description of drawings
Fig. 1 is ICP (Inductively Coupled Plasma, inductively coupled plasma) the reaction chamber structure schematic diagram that the embodiment of the invention adopted;
Fig. 2 is an etching reaction process schematic diagram;
Fig. 3 is the graph of a relation that active particle produces ratio and electron collision number in the etching process;
Fig. 4 is the comparison schematic diagram of etch rate under the different technical parameters variable in the embodiment of the invention one.
The specific embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Present embodiment at first needs the principle from plasma etching, and the oxidation silicon deep etching process is inquired into.
1.1 Plasma technology basic principle
Plasma is a kind of ionized gas, comprising molecule, ion, electronics etc.Though there is free charge in the plasma, because positive and negative electric charge is cancelled out each other, therefore plasma is electroneutral as a whole, reaches certain poised state.Under common discharging condition, ionisation of gas is partly, but at some in particular cases, also ionization fully.Plasma is the three states of matters---the 4th kind of possible state beyond solid-state, liquid state and the gaseous state.Compare with common gases, have a large amount of free charged particles in the plasma, make it have stronger electro permanent magnetic.
Plasma has the multiple essential characteristic that is different from other states of matters, as: plasma is known from experience the sheath layer that formation has screen effect around electrical body and floating electrode; Exist mutual vibration etc. between electronics and the ion.
Owing to contain a large amount of positive and negative charges in the plasma, they can shield those external interference that may influence plasma balance automatically, screen effect shows as: when introducing two during respectively with battery lead plate that power positive cathode links to each other in plasma, negative electrical charge (electronics) in the plasma can accumulate in positive electrode around, and positive charge (cation) can accumulate in negative electrode around.When equating, the electric weight in institute generation on the electric weight in the electrode exterior charging layer and the electrode electrode potential will be shielded fully the electric field effects that makes the plasma beyond screen layer not introduced by external electrode fully.The space charge layer of this one deck around electrode is called the sheath layer.
The pole plate of floating then be with the external world without any the pole plate that is electrically connected.When being put in the plasma, will form the sheath layer to the pole plate of floating on its surface.
Because warm-up movement, electronics and ion fly to pole plate randomly.The cosine law of following by gas molecule motion as can be known, the population that drops in the unit interval on the unit are pole plate is:
Wherein, n is a particle concentration, and v is the average speed of particle.If the charged particle in the plasma is electronics and monovalence cation, the two all has electric charge e.The electronics and the caused current density of ion that fly to pole plate so are respectively:
Can think the concentration approximately equal of electronics and ion, i.e. n in the plasma
e=n
i, but because the average speed v of electronics
eAverage speed v much larger than ion
iSo, j
eJ
iThis makes and occurs the net negative charge accumulation on the pole plate, has produced the negative potential with respect to plasma.Under this negative potential effect, electronics is repelled, and cation is attracted.So current density j that electronics causes
eConstantly reduce, and the current density j that cation causes
iConstantly increase.Negative potential on pole plate reaches certain value V
f, this moment, pole plate and electromotive force were V
pPlasma between electrical potential difference V
p-V
fJust in time make j
e=j
i, the pole plate electromotive force just tends towards stability.The electromotive force V that this is stable
fBe called the electromotive force of floating, V is obviously arranged
f＜V
pLike this, around floating body, formed the embracing layer of positive charge, i.e. the sheath layer.V
p-V
fBe that electronics passes through the sheath layer and arrives the required potential barrier that overcomes of pole plate from plasma, according to glass and graceful now function can pass through the electron concentration n of this potential barrier
e' satisfy:
Reached dynamic equilibrium owing to arrive the positive and negative charge of pole plate, therefore had:
Because n
e' be n
eIn a part, so have:
v
e′＝v
e (1.2.6)
Formula (1.2.4) and formula (1.2.6) substitution (1.2.5) can be got:
Consider n
e=n
iAnd v=(8kT/ π m)
1/2, formula (1.2.7) can turn to:
That part of electronics that only can overcome this potential barrier could arrive pole plate, to being etched with contribution.Therefore the energy of plasma is high more, and corrasion is strong more.
The polarity of plasma all is positive with respect to any floating body wherein, and this is that the easier plasma that leaves makes it electronegative to electrode movement because of the movement velocity height of electronics than ion.But such result will make and stay superfluous positive charge in the plasma, hinder electronics continue leave, both reach certain balance at last, plasma keeps stable positive potential with respect to these objects.It should be noted that voltage drop will directly influence the ion energy that bombards pole plate in the sheath layer.Ion can be subjected to the acceleration of sheath layer electric field after entering the sheath layer, if there is not collision in the sheath layer, the potential energy that ion obtains from sheath layer electric field will all become the kinetic energy of bombardment pole plate.Owing to always form the sheath layer around being in insulating bodies in the plasma, under the different situations sheath layer voltage one, second of the three ten-day periods of the hot season to tens volt do not wait.Under this electrical potential difference effect, the kinetic energy when ion is stamped pole plate approaches interatomic binding energy in the pole plate (usually in the 1-10eV scope), usually causes the change of polar board surface physicochemical property.The film of testing surface is etched with material impact in this collision process article on plasma body.
In the silica etching process, the chemical reaction process of active gases particle and solid state surface under the existing glow discharge condition also has the physical process of the very big particle bombardment sputter substrate surface of these energy.
Reactive ion is carved SiO
2The time, adopt fluoride gas, in glow discharge, decomposite fluorine atom or chlorine atom, same SiO
2The surface atom reaction generates gaseous products, reaches the etching purpose.Gas commonly used is fluorine base gas, generally is under the 13.3-0.133Pa vacuum condition, and by the effect of high frequency highfield, (density is 10 to make very easily endergonic electronics (1-10eV)
9-10
12/ cm
3) cause ionization with the gas molecule collision that feeds reative cell.In gas glow discharge, the degree of ionization that directly causes is more weak, approximately has only 10
-4-10
-7Gas molecule be ionized.But by repeatedly collision, can make that the increasing gas molecule of quantity is excited, activation and ionization.When the reative cell physical dimension is fixed, the applied power density constant when kind, flow, chamber pressure, underlayer temperature and the sample load that feeds gas remains unchanged, will produce the gas plasma glow discharge of uniform dynamic equilibrium at last.
1.2 the principle features of high-density plasma technology
The main application of plasma technique in microelectronics is exactly dry etching, and at present the most frequently used is reactive ion etching.Along with the development of plasma technology, the high-density plasma lithographic technique demonstrates its advantage day by day.In various high-density plasma etching systems, characteristics such as the ICP system is simple in structure with it, good uniformity are widely used in the high-aspect-ratio etching technics, and this also provides good hardware platform for the deep erosion research of high-aspect-ratio.In high density reactive ion etching system, reaction pressure is several milli torrs (mT), and gas density can reach 1000cm
-3Magnitude, and plasma density is substantially near the density of gas particle.The reduction of gas density and the increase of ion concentration make bias voltage induce the more common etching system of effect of etching that the raising of several magnitudes is arranged.As shown in Figure 1, be the ICP reaction chamber structure schematic diagram that high depth-to-width ratio silicon oxide etching technique embodiment of the present invention is adopted.Etching gas enters reative cell by air inlet, under the effect of certain ion gun power (reative cell top), produce high-density plasma, the electric field that wafer-supporting platform power (temperature control electrode below) is produced makes the effective etching active particle in the high-density plasma reach the etching print surface that places on the temperature control electrode, the non-masking regional of print is carried out etching, and reacted volatilization gas will be discharged from bleeding point.Above-mentioned ICP chamber hardware system architecture characteristics make ICP that the high density of providing has been provided, the ability of high-energy plasma body, thus possessed the ability of deep erosion, high-aspect-ratio, high selectivity.
1.3 silica etching mechanism
At first, particle flow depends on the kind of etching active particle and the frequency of pioneer's particle hits, has selected the heavier C of molecular mass in the present embodiment for use
4F
8As main etching gas, i.e. pioneer's particle of etching, because its molecular mass is bigger, therefore, and other fluorine base gas relatively, the quantity that its active group is excited is relative with the resident time longer, and the etching reaction process is as shown in Figure 2.Under plasmoid, C
4F
8The process of gas molecule ionization has following several situation:
The particle of being excited in plasma is mainly CF
3The time, key reaction process and product:
3/4SiO
2+ CF
3=3/4SiF
4+ CO+2O---is unnecessary to go out the O atom---reduce and select ratio
The particle of being excited in plasma is mainly CF
2The time, key reaction process and product:
1/2SiO
2+ CF
2=1/2SiF
4+ CO---〉best etch mode
When being excited particle when being mainly CF, key reaction process and product in the plasma:
1/4SiO
2+ CF=1/4SiF
4+ 1/2CO+1/2C---C precipitation---etching stops
Follow above-mentioned three kinds of possible courses of reaction, chemical reaction and product that the F-ion participates in:
4F-+SiO
2----〉SiF4+2O unnecessary go out O atom---reduce and select ratio
From the same SiO of above active particle of being excited
2Course of reaction as can be seen, CF
2Particle is etching SiO
2The best be excited active particle.Owing to the increase of the degree of being excited along with the residence time of pioneer's particle in plasma increases, therefore how to control the residence time of pioneer's particle in plasma, just how to control the C:F ratio, thereby improve CF
2: CF
3: the proportionality coefficient of CF becomes the key of silica etching.Increase CF
2+ and C
2F
4The ratio of+ion helps SiO
2Etching.
Except that the chemical reaction process of the above, the silica etching relies on the ion bombardment strongly.This bombardment effect belongs to physical process, and it helps to remove surperficial adsorbate, also can cause surface of solids lattice damage simultaneously, forms in the several atomic layers in surface and activates point, and these active sites are convenient to the chemical reaction of free radical.As chamber pressure lower (below the 6.65Pa), apply big (the about 0.44W/cm of power density
2) time, this physical sputtering effect is more obvious.As seen, etch rate also is decided by the flow of ion and active particle thereof from experience chart shown in Figure 3.The ratio that radical active particle produces depends on the number of electron collision again.
2. embodiment one: silica etching experimental study
In process of the test, present embodiment adopts SHIPLEY SPR-6400 photoresist, adopts Sopra GES5, Tencor AS500 contourgraph and JSM-7500F field emission scanning electron microscope to be used to measure the etching result.
2.1 the experimental study of silica etching condition and etching parameters relation
Following experiment is to change a certain etching technics parameter on experience technology basis, fixes other technological parameter, the etching of dividing into groups, and etch period is the etching result of 10min, its result relatively sees the following form shown in 1.
Basis experience process conditions: C
4F
8Flow is 10sccm/min; The He flow is 174sccm/min; H
2Flow is 8sccm/min; Pressure is 4mT; Ion gun power is 1000W; Wafer-supporting platform power is 300W.
Table 1
Can draw the comparison of technological parameter in conjunction with above-mentioned table 1, as shown in Figure 4 to the influence of silica etching key parameter.From above chart, can draw, with C
4F
8In the etching environment for main etching gas, the technological parameter outstanding to the etch rate influence is ion gun power, wafer-supporting platform power and chamber pressure.Within the specific limits, improve the numerical value of these several parameters, can obviously improve etch rate.But can cause inhomogeneity decline simultaneously.Simultaneously, the raising of ion gun or wafer-supporting platform power also can strengthen the degree of injury of reaction particle to etching print surface.For glass material, the increase of pressure can make the glass etching Sidewall angles tilt more on the contrary.Therefore, improve for making whole etching parameters, the value of etching condition parameter need be compromised.Under the prerequisite that does not reduce other parameter indexs, improve as far as possible and carve silica erosion speed and the selection ratio of mask.Obtain one group of optimal conditions parameter of high depth-to-width ratio silicon oxide etching technique of the present invention thus:
Ion gun power: 1000-1800W;
Wafer-supporting platform power: 300-400W;
Chamber pressure: 4-12mT;
C
4F
8Flow: 10-20sccm/min;
H
2Flow: 4-8sccm/min;
He flow: 150-200sccm/min.
2.3 silica etching experimental result and analysis
2.3.1 ion gun power is to the influence of etching parameters
The increase of ion gun power is improved the energy of reaction particle, thereby effective etching active group density of reacting gas is improved thereupon greatly, has aggravated SiO
2With the chemical reaction of etching active particle, thereby make SiO
2Etch rate accelerate greatly thereupon.When ion gun power is too high, the further increase of isoionic density and energy can cause the temperature on etching print surface sharply to increase, the spread heat inequality, but uniformity can obviously descend, if make mask with photoresist, cause photoresist local heating wrinkling easily.
2.3.2 wafer-supporting platform power is to the influence of etching parameters
The increase of wafer-supporting platform power has improved the intensity of reaction particle accelerating field greatly, and energy and speed when making reaction particle arrive substrate surface strengthen, thereby have aggravated the etching active particle to silica material Surface Physical etching, thereby make SiO
2Etch rate accelerate greatly thereupon.But simultaneously, the energy when arriving substrate surface owing to active particle strengthens, and the physical sputtering effect is also strengthened thereupon.Increasing SiO
2Etch rate has simultaneously also increased the surface damage of film, and, the bombardment effect of photoresist made select than descend thereupon.If substrate SiO
2Thick or the glass substrate of film adhesive, surface radiating weakens greatly, if with photoresist when making etch mask, can to cause photoresist to be assembled wrinkling etc. for etching for a long time.
2.3.3 chamber pressure is to the influence of etching parameters
Can see that from experimental result chamber pressure increases, silica is slightly descended to the selection ratio of photoresist, etch rate can slightly increase along with the increase of pressure under certain pressure.
2.3.4 the influence of the combination of reacting gas and flow and etching parameters
C
4F
8Increase can make reaction rate and silica to the selection of photoresist than increasing thereupon, but work as C
4F
8Flow be increased to a certain degree the time, etch rate tends to be steady basically; And H
2Introducing the unnecessary products such as oxygen in the reaction product atmosphere in time are reduced, help slowing down etching to photoresist, therefore the silica etching selection ratio is significantly improved, but can reduces the concentration of etching gas, the silica etch rate is slightly descended.In etching gas, introduce He gas, can improve the energy of active particle, increase its collision probability, make etch rate improve.But surpass certain limit, the concentration of effective etching gas is reduced, from and etch rate is descended.
2.3.5 silicon oxide etching technique condition and the etching parameters optimized
Draw two groups of optimal conditions parameters of high depth-to-width ratio silicon oxide etching technique of the present invention by above analysis, shown in following table 2 and table 3, wherein the etch mask of Cai Yonging is photoresist to its etching result who obtains respectively.
Table 2
Table 3
Claims (5)
1. a high depth-to-width ratio silicon oxide etching technique adopt the inductively coupled plasma etching system, and reacting gas comprises C
4F
8, H
2And He, it is characterized in that, adopt following technological parameter window:
Ion gun power: 1000-1800W;
Wafer-supporting platform power: 300-400W;
Chamber pressure: 4-12mT;
C
4F
8Flow: 10-20sccm/min;
H
2Flow: 4-8sccm/min;
He flow: 150-200sccm/min.
2. high depth-to-width ratio silicon oxide etching technique as claimed in claim 1 is characterized in that, the technological parameter of described employing is specially:
Ion gun power: 1000W;
Wafer-supporting platform power: 300W;
Chamber pressure: 8mT;
C
4F
8Flow: 10sccm/min;
H
2Flow: 8sccm/min;
He flow: 174sccm/min.
3. high depth-to-width ratio silicon oxide etching technique as claimed in claim 1 is characterized in that, the technological parameter of described employing is specially:
Ion gun power: 1800W;
Wafer-supporting platform power: 300W;
Chamber pressure: 8mT;
C
4F
8Flow: 10sccm/min;
H
2Flow: 8sccm/min;
He flow: 174sccm/min.
4. as each described high depth-to-width ratio silicon oxide etching technique of claim 1～3, it is characterized in that the etch mask of this process using is a photoresist.
5. as each described high depth-to-width ratio silicon oxide etching technique of claim 1～4, it is characterized in that described inductively coupled plasma etching system is the STS AOE34443 type etching machine of Britain STS company.
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|---|---|---|---|
| CNA2008102224444A CN101372311A (en) | 2008-09-17 | 2008-09-17 | High depth-to-width ratio silicon oxide etching technique |
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|---|---|---|---|
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ID=40446722
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102351439A (en) * | 2011-07-22 | 2012-02-15 | 大连民族学院 | Method and apparatus for depositing film in fiber by using atmospheric pressure glow discharge |
| CN110347014A (en) * | 2019-07-16 | 2019-10-18 | 哈尔滨工业大学（深圳） | It is a kind of to prepare the high vertical wide vertical etch technique than titanium dioxide |
-
2008
- 2008-09-17 CN CNA2008102224444A patent/CN101372311A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102351439A (en) * | 2011-07-22 | 2012-02-15 | 大连民族学院 | Method and apparatus for depositing film in fiber by using atmospheric pressure glow discharge |
| CN102351439B (en) * | 2011-07-22 | 2013-06-12 | 大连民族学院 | Method and apparatus for depositing film in fiber by using atmospheric pressure glow discharge |
| CN110347014A (en) * | 2019-07-16 | 2019-10-18 | 哈尔滨工业大学（深圳） | It is a kind of to prepare the high vertical wide vertical etch technique than titanium dioxide |
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