CN101360804A - 具有高初始亮度的防潮电致发光磷光体及其制造方法 - Google Patents
具有高初始亮度的防潮电致发光磷光体及其制造方法 Download PDFInfo
- Publication number
- CN101360804A CN101360804A CNA200780001477XA CN200780001477A CN101360804A CN 101360804 A CN101360804 A CN 101360804A CN A200780001477X A CNA200780001477X A CN A200780001477XA CN 200780001477 A CN200780001477 A CN 200780001477A CN 101360804 A CN101360804 A CN 101360804A
- Authority
- CN
- China
- Prior art keywords
- phosphorescent substance
- bed
- coating
- fluidized
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000576 coating method Methods 0.000 claims abstract description 59
- 239000011248 coating agent Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000002243 precursor Substances 0.000 claims abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 25
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 67
- 229910052782 aluminium Inorganic materials 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 22
- 239000004411 aluminium Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000010926 purge Methods 0.000 claims description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000000717 retained effect Effects 0.000 claims description 8
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- 238000002309 gasification Methods 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 230000002045 lasting effect Effects 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 58
- 230000008569 process Effects 0.000 abstract description 11
- 239000011247 coating layer Substances 0.000 abstract description 5
- 238000000231 atomic layer deposition Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 238000012360 testing method Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229910002706 AlOOH Inorganic materials 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- 229920004439 Aclar® Polymers 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000916 dilatatory effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 hydroxyl aluminium oxide Chemical compound 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
- C09K11/582—Chalcogenides
- C09K11/584—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
灯试验 | 灯属性 | 未涂覆的磷光体对照物 | 标准CVD涂覆的对照物 | ALD800周期对照物 | ALD100周期 | ALD100周期+CVD#1 | ALD100周期+CVD#2 | ALD100周期+CVD#3 |
CIE xcoord. | 0.181 | 0.184 | 0.180 | 0.180 | 0.183 | 0.182 | 0.182 | |
CIE ycoord. | 0.464 | 0.478 | 0.462 | 0.461 | 0.469 | 0.466 | 0.465 | |
1 | 0hr,cd/m2 | 100.7 | 80.4 | 96.4 | 101.9 | 100.7 | 101.2 | 100.3 |
1 | 残留初始亮度0hr,% | 100 | 79.8 | 96.7 | 101.2 | 100 | 100.5 | 99.6 |
1 | 24hr,cd/m2 | 92.8 | 74.5 | 90.0 | 69.7 | 91.2 | 92.7 | 92.6 |
1 | 100hr,cd/m2 | 85.5 | 69.2 | 83.1 | 42.7 | 75.1 | 80.4 | 83.0 |
2 | 0hr,cd/m2 | -- | 74.6 | 90.3 | 95.8 | 100.5 | 101.9 | 100.5 |
2 | 100hr,cd/m2 | -- | 56.8 | 69.4 | 1.0 | 13.7 | 23.9 | 38.0 |
2 | 维持率%100hr/0hr | -- | 76.1 | 76.9 | 1.1 | 13.6 | 23.5 | 37.8 |
Al,涂层wt.% | -- | 3.8 | 1.6 | 0.26 | 0.64 | 0.74 | 0.84 |
灯试验 | 灯属性 | ALD 100周期+CVD #4 | ALD 100周期+CVD #5 | ALD 100周期+CVD #6 | ALD 100周期+CVD #7 | ALD 100周期+CVD #8 | ALD 100周期+CVD #9 |
CIE xcoord. | 0.181 | 0.181 | 0.183 | 0.183 | 0.183 | 0.181 | |
CIE ycoord. | 0.463 | 0.462 | 0.469 | 0.469 | 0.468 | 0.465 | |
1 | 0hr,cd/m2 | 99.1 | 95.9 | 93.2 | 92.7 | 91.9 | 91.7 |
1 | 残留初始亮度0hr,% | 98.4 | 95.2 | 92.6 | 92.1 | 91.3 | 91.1 |
1 | 24hr,cd/m2 | 93.2 | 89.1 | 86.0 | 85.6 | 85.0 | 84.7 |
1 | 100hr,cd/m2 | 83.9 | 81.6 | 78.6 | 78.6 | 78.1 | 78.3 |
2 | 0hr,cd/m2 | 100.5 | 97.8 | 91.7 | 93.4 | 91.7 | 92.7 |
2 | 100hr,cd/m2 | 49.9 | 59.2 | 66.0 | 69.4 | 70.5 | 75.9 |
2 | 维持率%100hr/0hr | 49.7 | 60.5 | 72.0 | 74.3 | 76.9 | 81.9 |
Al,涂层wt.% | 0.95 | 1.1 | 1.5 | 1.9 | 2.2 | 2.3 |
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76654206P | 2006-01-26 | 2006-01-26 | |
US60/766,542 | 2006-01-26 | ||
PCT/US2007/060538 WO2007087479A2 (en) | 2006-01-26 | 2007-01-15 | Moisture-resistant electroluminescent phosphor with high initial brightness and method of making |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101360804A true CN101360804A (zh) | 2009-02-04 |
CN101360804B CN101360804B (zh) | 2014-11-26 |
Family
ID=38309898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780001477.XA Expired - Fee Related CN101360804B (zh) | 2006-01-26 | 2007-01-15 | 具有高初始亮度的防潮电致发光磷光体及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8298666B2 (zh) |
EP (1) | EP1976957A4 (zh) |
JP (1) | JP5541866B2 (zh) |
KR (1) | KR101451992B1 (zh) |
CN (1) | CN101360804B (zh) |
CA (1) | CA2631727A1 (zh) |
WO (1) | WO2007087479A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102414342A (zh) * | 2009-03-04 | 2012-04-11 | 代尔夫特理工大学 | 用于在气动传输期间在颗粒上进行原子或分子层沉积的设备和方法 |
US8298666B2 (en) | 2006-01-26 | 2012-10-30 | Global Tungsten & Powders Corp. | Moisture resistant electroluminescent phosphor with high initial brightness and method of making |
CN113444525A (zh) * | 2021-06-25 | 2021-09-28 | 佛山安亿纳米材料有限公司 | 发光性能稳定的硫化物荧光体及制备发光性能稳定的硫化物荧光体的原子层沉积法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7833437B2 (en) * | 2006-01-26 | 2010-11-16 | Global Tungsten & Powders Corp. | Moisture-resistant electroluminescent phosphor with high initial brightness and method of making |
US8993051B2 (en) * | 2007-12-12 | 2015-03-31 | Technische Universiteit Delft | Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle |
US20160264862A1 (en) * | 2013-11-01 | 2016-09-15 | Merck Patent Gmbh | Silicate phosphors |
DE102016104194A1 (de) * | 2016-03-08 | 2017-09-14 | Osram Gmbh | Verfahren zur Herstellung von Leuchtstoffpartikeln mit einer Schutzschicht und Leuchtstoffpartikel mit einer Schutzschicht |
US10886437B2 (en) * | 2016-11-03 | 2021-01-05 | Lumileds Llc | Devices and structures bonded by inorganic coating |
MA47746A (fr) * | 2017-03-07 | 2020-01-15 | Saint Gobain | Système de vitrage automobile doté d'un affichage |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244750A (en) * | 1988-06-10 | 1993-09-14 | Gte Products Corporation | Coated electroluminescent phosphor |
US5009808A (en) * | 1988-12-27 | 1991-04-23 | Gte Products Corporation | Process for producing electroluminescent yellow zinc sulfide phosphors |
US5156885A (en) | 1990-04-25 | 1992-10-20 | Minnesota Mining And Manufacturing Company | Method for encapsulating electroluminescent phosphor particles |
US5593782A (en) * | 1992-07-13 | 1997-01-14 | Minnesota Mining And Manufacturing Company | Encapsulated electroluminescent phosphor and method for making same |
US5220243A (en) * | 1990-10-05 | 1993-06-15 | Gte Products Corporation | Moisture insensitive zinc sulfide electroluminescent materials and an electroluminescent device made therefrom |
US5080928A (en) * | 1990-10-05 | 1992-01-14 | Gte Laboratories Incorporated | Method for making moisture insensitive zinc sulfide based luminescent materials |
US5643496A (en) * | 1996-04-04 | 1997-07-01 | Osram Sylvania Inc. | Small size electroluminescent phosphor |
US5702643A (en) * | 1996-04-24 | 1997-12-30 | Osram Sylvania Inc. | ZnS:Cu electroluminescent phosphor and method of making same |
JP2001513828A (ja) * | 1997-02-24 | 2001-09-04 | スーペリア マイクロパウダーズ リミテッド ライアビリティ カンパニー | 酸素含有蛍光粉体、該蛍光粉体の製造方法、該蛍光粉体を利用してなる装置 |
DE19849581B4 (de) * | 1997-10-27 | 2005-05-12 | Osram Sylvania Inc., Danvers | Verfahren zur Herstellung eines elektrolumineszenten Phosphors mit langer Lebensdauer |
US6064150A (en) | 1998-01-12 | 2000-05-16 | Osram Sylvania Inc. | Nitride coated particle and composition of matter comprised of such particles |
CA2268602C (en) * | 1998-06-02 | 2004-06-22 | Osram Sylvania Inc. | Method for making long-life electroluminescent phosphor |
US6090311A (en) * | 1998-12-01 | 2000-07-18 | Osram Sylvania Inc. | Alkali iodide doped zinc sulfide electroluminescent phoshor |
US6613383B1 (en) * | 1999-06-21 | 2003-09-02 | Regents Of The University Of Colorado | Atomic layer controlled deposition on particle surfaces |
WO2001036559A2 (en) | 1999-11-19 | 2001-05-25 | Osram Sylvania, Inc. | Encapsulated long life electroluminescent phosphor |
US6702959B2 (en) * | 1999-11-19 | 2004-03-09 | Osram Sylvania Inc. | Long life, white light emitting electroluminescent phosphor |
US6849297B1 (en) * | 1999-11-19 | 2005-02-01 | Osram Sylvania Inc. | Encapsulated long life electroluminescent phosphor |
US20010052752A1 (en) | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
US6713177B2 (en) * | 2000-06-21 | 2004-03-30 | Regents Of The University Of Colorado | Insulating and functionalizing fine metal-containing particles with conformal ultra-thin films |
TW548239B (en) * | 2000-10-23 | 2003-08-21 | Asm Microchemistry Oy | Process for producing aluminium oxide films at low temperatures |
US6733826B2 (en) * | 2000-12-18 | 2004-05-11 | Osram Sylvania Inc. | Method and apparatus for coating electroluminescent phosphors |
CA2363532A1 (en) * | 2000-12-18 | 2002-06-18 | Osram Sylvania Inc. | Preparation of high-brightness, long life, moisture resistant electroluminescent phosphor |
US7001665B2 (en) * | 2001-04-06 | 2006-02-21 | Osram Sylvania Inc. | Electroluminescent phosphor with plural moisture resistant coatings thereon |
AU2003238853A1 (en) * | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
CN1468936A (zh) * | 2003-06-10 | 2004-01-21 | 山东宇光电子科技有限公司 | 复合包裹型ZnS∶Cu/Cu.Mn 电致发光材料及其制备方法 |
KR20050028980A (ko) * | 2003-09-19 | 2005-03-24 | 한국전자통신연구원 | 무기 박막 전계 발광 소자 및 그 제조 방법 |
US20070298250A1 (en) * | 2006-06-22 | 2007-12-27 | Weimer Alan W | Methods for producing coated phosphor and host material particles using atomic layer deposition methods |
US7833437B2 (en) * | 2006-01-26 | 2010-11-16 | Global Tungsten & Powders Corp. | Moisture-resistant electroluminescent phosphor with high initial brightness and method of making |
US8298666B2 (en) | 2006-01-26 | 2012-10-30 | Global Tungsten & Powders Corp. | Moisture resistant electroluminescent phosphor with high initial brightness and method of making |
-
2007
- 2007-01-12 US US11/622,633 patent/US8298666B2/en not_active Expired - Fee Related
- 2007-01-15 KR KR1020087013043A patent/KR101451992B1/ko not_active IP Right Cessation
- 2007-01-15 WO PCT/US2007/060538 patent/WO2007087479A2/en active Application Filing
- 2007-01-15 JP JP2008552523A patent/JP5541866B2/ja not_active Expired - Fee Related
- 2007-01-15 EP EP07710126A patent/EP1976957A4/en not_active Withdrawn
- 2007-01-15 CA CA002631727A patent/CA2631727A1/en not_active Abandoned
- 2007-01-15 CN CN200780001477.XA patent/CN101360804B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8298666B2 (en) | 2006-01-26 | 2012-10-30 | Global Tungsten & Powders Corp. | Moisture resistant electroluminescent phosphor with high initial brightness and method of making |
CN102414342A (zh) * | 2009-03-04 | 2012-04-11 | 代尔夫特理工大学 | 用于在气动传输期间在颗粒上进行原子或分子层沉积的设备和方法 |
CN102414342B (zh) * | 2009-03-04 | 2014-05-21 | 代尔夫特理工大学 | 用于在气动传输期间在颗粒上进行原子或分子层沉积的设备和方法 |
CN113444525A (zh) * | 2021-06-25 | 2021-09-28 | 佛山安亿纳米材料有限公司 | 发光性能稳定的硫化物荧光体及制备发光性能稳定的硫化物荧光体的原子层沉积法 |
Also Published As
Publication number | Publication date |
---|---|
KR101451992B1 (ko) | 2014-10-22 |
CA2631727A1 (en) | 2007-08-02 |
US20070172657A1 (en) | 2007-07-26 |
EP1976957A4 (en) | 2010-12-01 |
KR20080089336A (ko) | 2008-10-06 |
CN101360804B (zh) | 2014-11-26 |
JP2009524735A (ja) | 2009-07-02 |
WO2007087479A2 (en) | 2007-08-02 |
JP5541866B2 (ja) | 2014-07-09 |
EP1976957A2 (en) | 2008-10-08 |
US8298666B2 (en) | 2012-10-30 |
WO2007087479A3 (en) | 2008-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101360803B (zh) | 具有高初始亮度的防潮电致发光磷光体及其制造方法 | |
CN101360804B (zh) | 具有高初始亮度的防潮电致发光磷光体及其制造方法 | |
CN1192076C (zh) | 用多氧化物涂层包封的电致发光的磷光体颗粒和包封磷光体颗粒的方法 | |
US9443998B2 (en) | Multi-layer-coated quantum dot beads | |
US5220243A (en) | Moisture insensitive zinc sulfide electroluminescent materials and an electroluminescent device made therefrom | |
US5080928A (en) | Method for making moisture insensitive zinc sulfide based luminescent materials | |
US6548172B2 (en) | Diamond-like carbon coatings on inorganic phosphors | |
US6064150A (en) | Nitride coated particle and composition of matter comprised of such particles | |
CN1161445C (zh) | 氧氮化物包封的电致发光磷光体颗粒、含它的装置和包封磷光体颗粒的方法 | |
US20160264862A1 (en) | Silicate phosphors | |
JPH0625857A (ja) | 微細な材料をチタニアで被覆する方法及びそれから生成された湿度不感受性硫化亜鉛ルミネセンス材料 | |
CN105885823B (zh) | 一种改善发光材料化学稳定性的方法 | |
US6787988B2 (en) | Process for treating previously coated phosphor particles | |
MXPA99011589A (en) | Electroluminescent phosphor particles encapsulated with an aluminum oxide based multiple oxide coating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBAL TUNGSTEN + POWDERS CORP. Free format text: FORMER OWNER: OSRAM SYLVANIA INC. Effective date: 20140825 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140825 Address after: American Pennsylvania Applicant after: Global Tungsten & Powders Corp. Address before: Massachusetts, USA Applicant before: Osram Sylvania Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141126 Termination date: 20150115 |
|
EXPY | Termination of patent right or utility model |