CN101359172A - Method of making thin film pattern layer - Google Patents
Method of making thin film pattern layer Download PDFInfo
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- CN101359172A CN101359172A CNA2007101298906A CN200710129890A CN101359172A CN 101359172 A CN101359172 A CN 101359172A CN A2007101298906 A CNA2007101298906 A CN A2007101298906A CN 200710129890 A CN200710129890 A CN 200710129890A CN 101359172 A CN101359172 A CN 101359172A
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- layer manufacturing
- thinfilm pattern
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Abstract
The invention relates to a thin film pattern layer manufacturing method, comprising the following steps: providing a substrate which has a plurality of partition walls on the surface, and a plurality of containing spaces are formed among the partition walls; providing a light mask and a UV source, wherein, the light mask is arranged between the UV source and the partition walls; the light mask comprises a plurality of shading parts for shading the top surfaces of the partition walls, and a plurality of light transmission parts through which the light can pass to the containing spaces; the UV source emits UV rays which irradiate the side faces of the partition walls and the surface of the substrate through the light transmission parts; ink is filled into the containing spaces; and the ink is solidified to form a thin film pattern layer.
Description
Technical field
The present invention relates to a kind of Thinfilm pattern layer manufacturing method.
Background technology
The method of making patterned layer on substrate at present mainly comprises: light lithography method and ink-jet method.
The light lithography method: by coating photoresistance material on the board structure of the required film of preparation coating, the light shield that will have predetermined pattern is arranged on the photoresist, and expose and develops, or add etch process, and the patterned layer on substrate that formation has predetermined pattern.This light lithography method needs complicated processing procedure, and the service efficiency of material is lower and cause the manufacturing cost height.
Ink-jet method, this sentences the preparation colored filter is the example explanation.Making colored filter with ink-jet method mainly may further comprise the steps: shown in Fig. 1 (a), one substrate 42 is provided and is arranged at the dividing wall 44 that a plurality of ranks on the substrate 42 distribute, the side 44a of these a plurality of dividing walls 44 limits a plurality of receiving spaces 46, one ultraviolet light 48 is provided, and this ultraviolet light 48 is perpendicular to the surface irradiation of described substrate 42.Shown in Fig. 1 (b), (c), use an ink discharge device 50, this ink discharge device 50 has jet orifice 52, ink 54R, 54G, 54B that this ink gun 52 will form membraneous material spray in these a plurality of receiving spaces 46, after being cured, ink 54R, 54G, 54B on this substrate 42, form predetermined patterned layer on substrate, wherein, ink 54R, 54G, 54B are respectively the red, green, blue chromatic ink.Use ink-jet method to make colored filter and can once form patterned layer on substrate.Because processing procedure is simplified greatly, material uses economical, so cost significantly reduces.
Proceedings of the 2005 IEEE (the 258th to 260 page) disclose title in November, 2005 and have made in the processing procedure of colored filter for mentioning industrial inkjet processing procedure such as ink-jet method in the paper of " The Fluid Property Dependency on Ink Jetting Characteristics ", and ink-jet ink need have viscosity (viscosity) and the surface tension (surface tension) that is adapted to the ink-jet processing procedure.Therefore, can select the stronger ink-jet ink of viscosity and surface tension to strengthen wetting state between ink and substrate and ink and the dividing wall; Can certainly adopt the method shown in Fig. 1 (a) to substrate and dividing wall irradiation ultraviolet radiation.In processing procedure shown in Figure 1, ultraviolet light 48 can make airborne newly-increased ozone or original ozone isolate active oxygen, the more not hydrophilic polluter that adheres on the surface is decomposed remove, and make wetting state lifting between substrate 42 surfaces and ink 54R, 54G, the 54B; In addition, when substrate 42 or dividing wall 44 were organic material, ultraviolet light 48 can also destroy the unsaturated link on this organic material surface, and hydrophilic functionality is added, and made the wetting state between itself and ink 54R, 54G, the 54B stronger.
In traditional processing procedure, because this ultraviolet light 48 is perpendicular to the top surface 44b irradiation of described dividing wall 44, make the top surface 44b of dividing wall 44 and ink 54R, 54G, 54B wettability stronger, and the wettability of the side 44a of dividing wall 44 and ink 54R, 54G, 54B relative a little less than.When the ink spray volume in a certain receiving space 42 excessive and when making liquid level exceed the top surface 44b of dividing wall 44, exceed the top surface 44b of dividing wall 44 such as the liquid level of 54R, 54G, may cross and make by force ink 54R flow and colour mixture takes place to the ink 54G direction adjacent owing to the wetting state between ink 54R, 54G and the dividing wall 44, influence the quality of described patterned layer on substrate with ink 54G with ink 54R along dividing wall 44 top surface 44b.
Summary of the invention
In view of this, be necessary to provide a kind of Thinfilm pattern layer manufacturing method that improves the patterned layer on substrate quality.
A kind of Thinfilm pattern layer manufacturing method may further comprise the steps: a substrate is provided, and its surface has a plurality of dividing walls, forms a plurality of receiving spaces between these a plurality of dividing walls; One light shield and a ultraviolet source are provided, and wherein, described light shield is arranged between described ultraviolet source and the described dividing wall, but described light shield comprises the light shielding part of a plurality of top surfaces that are used to block dividing wall and a plurality of transmitted light transmittance section to receiving space; Described ultraviolet source sends ultraviolet light the side and the substrate surface of described a plurality of dividing walls is shone; Filling ink is to these a plurality of receiving spaces; And solidified ink is to form patterned layer on substrate.
In the described Thinfilm pattern layer manufacturing method, between ultraviolet source and dividing wall, light shield is set, make the dividing wall top surface avoid UV-irradiation, thereby can make and have more weak wettability between dividing wall top surface and the ink, reduced the trend that when the ink in a certain receiving space is spilled over to the dividing wall top surface, flows to the receiving space that is adjacent, thereby the colour mixture of ink in the minimizing adjacent containing spaces, the quality of raising patterned layer on substrate.
Description of drawings
Fig. 1 is the schematic flow sheet of a kind of Thinfilm pattern layer manufacturing method of prior art.
Fig. 2 (a) is the synoptic diagram of a kind of Thinfilm pattern layer manufacturing method of providing of first embodiment of the invention to Fig. 2 (c).
Fig. 3 is the schematic cross-section according to the patterned layer on substrate of Thinfilm pattern layer manufacturing method manufacturing shown in Figure 2.
Fig. 4 is the substrate that provides of second embodiment of the invention and the schematic cross-section of dividing wall structure.
Fig. 5 is the substrate that provides of third embodiment of the invention and the schematic cross-section of dividing wall structure.
Embodiment
Below in conjunction with accompanying drawing the embodiment of the invention is described in further detail.
First embodiment of the invention provides a kind of Thinfilm pattern layer manufacturing method, and this method may further comprise the steps:
1) provide a substrate, its surface has a plurality of dividing walls, forms a plurality of receiving spaces between these a plurality of dividing walls.
2) provide a light shield and a ultraviolet source, wherein, described light shield is arranged between described ultraviolet source and the described dividing wall, but described light shield comprises the light shielding part of a plurality of top surfaces that are used to block dividing wall and a plurality of transmitted light transmittance section to receiving space.
3) described ultraviolet source sends ultraviolet light and sees through described transmittance section the side and the substrate surface of a plurality of dividing walls shone.
4) filling ink is to these a plurality of receiving spaces.
5) solidified ink is to form patterned layer on substrate.
Below in conjunction with accompanying drawing said method is elaborated:
See also Fig. 2 (a), in step 1), provide a surface to be provided with to be the substrate 102 of a plurality of dividing walls 104 that ranks arrange, each dividing wall 104 has a plurality of side 104a and a top surface 104b respectively, a plurality of side 104a of these a plurality of dividing walls 104 limit a plurality of receiving spaces 107, and these a plurality of receiving spaces 107 are generally array and arrange.Usually, this top surface 104b is parallel with substrate 102 surfaces, and described side 104a and substrate 102 angulation θ are greater than 90 degree.Be appreciated that these a plurality of receiving spaces 107 all right mosaic modes or irregular mode arrangement etc., be not limited to present embodiment.
In step 2) in, an exposure light source 60 and a light shield 200 are provided, this light shield 200 is arranged between this exposure light source 60 and this substrate 102.Usually, described exposure light source 60 is a ultraviolet source, and present embodiment exposure light source 60 sends ultraviolet light 109.Described light shield 200 comprises a plurality of light shielding part 200a on a transmittance section 200b and 200b surface, transmittance section, and the formed pattern of described a plurality of light shielding part 200a is corresponding at substrate 102 surperficial formed patterns with a plurality of dividing walls 104.Described light shielding part 200a is used to block the directive dividing wall 104 top surface 104b light partly that exposure light source 60 sends, and the directive that sends through described exposure light source 60 that act as of described transmittance section 200b is formed the substrate 102 of receiving space 107 and the light of dividing wall 104 side 104a part.In Fig. 2 (a), described light shield 200 and dividing wall 104 are appreciated that the setting that can also contact of described light shield 200 from a distance, are not limited to present embodiment.
In step 3), described exposure light source 60 to be sending ultraviolet light 109 perpendicular to the direction on described substrate 102 surfaces, because the blocking of the light shielding part 200a of light shield 200, described ultraviolet light 109 is the side 104b of directive substrate 102 surfaces and dividing wall 104 only.The exposure light that is appreciated that described exposure light source 60 can also become other angle with substrate 102 surface, is not limited to present embodiment and vertical relations substrate 102 surfaces.
As Fig. 2 (b) and (c), in step 4), utilize an ink discharge device 300 that the ink 108 of required membraneous material is filled in the receiving space 107 to form ink layer 110, wherein, this ink discharge device 300 comprises at least one ink gun 302 and is arranged at least one jet orifice 304 of this ink gun 302 that ink 108 is by these jet orifice 304 ejections.
In step 5), utilize a solidification equipment (figure does not show) that these a plurality of ink layer 110 are solidified, to form patterned layer on substrate.This solidification equipment can be wherein any two or three combination of a heating arrangement or a ultraviolet exposure apparatus according or a vacuum extractor or said apparatus.The ink layer 110 of present embodiment is that example describes with spaced red ink water layer 110R, green ink water layer 110G and blue ink water layer 110B.
Need explanation, the purpose to substrate 102 surfaces and dividing wall 104 side 104a irradiating ultraviolet light lines 109 in the step 3) is the wetting state that strengthens between substrate 102 surfaces and dividing wall 104 side 104a and the ink 108, so that ink 108 is attached to it better.In addition, the material of described dividing wall 104 can be for including the responsive material of ultraviolet light, when UV-irradiation thereon the time, the wettability enhancing of the responsive material of described ultraviolet light and ink 108, thus make the wettability of dividing wall 104 side 104a and ink 108 stronger.
In the present embodiment, described exposure light source 60 is preferably low pressure straight pipe type ultraviolet source.In addition, the wavelength of described exposure light source 60 is preferably less than 320 nanometers, wavelength coverage adapts therewith, the material of described light shield 200 generally adopts chromium, resin material etc., the material of described dividing wall 104 can be resin photoresist etc., the side 104a that can make dividing wall 104 through the ultraviolet light irradiation after, present preferably wetting state with ink 108.
With respect to prior art, this method has adopted light shield 200 at exposure light source 60 and dividing wall 108, the side 104a of dividing wall 104 is shone, and the top surface 104b of dividing wall 104 is shone owing to the blocking of light shielding part 200a of light shield 200, thereby make the wetting state of side 104a and ink 108 stronger, ink 108 is more firm in adhering to of dividing wall 104 side 104a, also avoids simultaneously because the adjacent ink layer colour mixture that top surface 104b and the enhancing of ink wetting state take place.
The material of this substrate 102 can be selected from glass, quartz glass, Silicon Wafer (wafer), metal and plastics etc., and in the present embodiment, this substrate 102 is a glass substrate.This ink discharge device 300 can be Thermal Bubble Ink-jet Printer device or piezoelectric ink jet device etc.
See also Fig. 3, be the patterned layer on substrate 100 that forms according to the manufacture method of first embodiment, the ink layer 110 of these patterned layer on substrate 100 each row is a color of the same race, ink layer 110 in each row is spaced by different colours, as being spaced according to red ink water layer 110R, green ink water layer 110G and putting in order of blue ink water layer 110B.Certainly, described ink layer 110 can also be not limited to present embodiment for other arrangement mode.
Seeing also Fig. 4, is second embodiment of the invention substrate and dividing wall structure.As shown in Figure 4, dividing wall 206 is arranged at the side 208 and substrate 102 angulation θ of substrate 102 surfaces and dividing wall 206
1Be 90 degree.
See also Fig. 5, be the substrate and the dividing wall structure of third embodiment of the invention.As shown in Figure 5, the structure of the structure of substrate 202 and dividing wall 204 and the substrate among Fig. 4 102 and dividing wall 206 is basic identical, difference is that this substrate 202 and dividing wall 204 are structure as a whole, and the material of this substrate 202 and dividing wall 204 is selected from wherein a kind of such as glass, quartz glass, metal and plastics.
In addition, those skilled in the art can also do other variation in spirit of the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (11)
1. Thinfilm pattern layer manufacturing method may further comprise the steps:
One substrate is provided, and its surface has a plurality of dividing walls, forms a plurality of receiving spaces between these a plurality of dividing walls;
One light shield and a ultraviolet source are provided, and wherein, described light shield is arranged between described ultraviolet source and the described dividing wall, but described light shield comprises the light shielding part of a plurality of top surfaces that are used to block dividing wall and a plurality of transmitted light transmittance section to receiving space;
Ultraviolet source sends ultraviolet light and shines through the side and the substrate surface of described transmittance section to a plurality of dividing walls;
Filling ink is to these a plurality of receiving spaces; And
Solidified ink is to form patterned layer on substrate.
2. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, the material of described light shield is a chromium.
3. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, the material of described dividing wall is the resin photoresist.
4. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, the wavelength of described ultraviolet light is less than 320 nanometers.
5. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, the direction of described ultraviolet light is perpendicular to described substrate surface.
6. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, described substrate and the described a plurality of dividing wall structure that is formed in one.
7. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, described baseplate material is selected from wherein a kind of in glass, quartz glass, metal and the plastics.
8. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, the step of described filling ink is to utilize an ink discharge device that ink is filled in the receiving space, and this ink discharge device comprises at least one ink gun and at least one jet orifice that is arranged on the ink gun.
9. Thinfilm pattern layer manufacturing method as claimed in claim 8, wherein, described ink discharge device is Thermal Bubble Ink-jet Printer device or piezoelectric ink jet device.
10. Thinfilm pattern layer manufacturing method as claimed in claim 1, wherein, described curing schedule is wherein two or three the combination in any solidified ink that utilizes a heating arrangement or a vacuum extractor or an exposure device or said apparatus.
11. Thinfilm pattern layer manufacturing method as claimed in claim 10, wherein, described exposure device is a ultraviolet exposure apparatus according.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101298906A CN101359172A (en) | 2007-07-31 | 2007-07-31 | Method of making thin film pattern layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101298906A CN101359172A (en) | 2007-07-31 | 2007-07-31 | Method of making thin film pattern layer |
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| CN101359172A true CN101359172A (en) | 2009-02-04 |
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| CNA2007101298906A Pending CN101359172A (en) | 2007-07-31 | 2007-07-31 | Method of making thin film pattern layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446384A (en) * | 2020-04-14 | 2020-07-24 | Tcl华星光电技术有限公司 | Photomask and preparation method thereof |
| CN114594230A (en) * | 2022-02-22 | 2022-06-07 | 山东科技大学 | Preparation device and preparation method of mixed wettability sandstone microscopic model |
-
2007
- 2007-07-31 CN CNA2007101298906A patent/CN101359172A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446384A (en) * | 2020-04-14 | 2020-07-24 | Tcl华星光电技术有限公司 | Photomask and preparation method thereof |
| CN114594230A (en) * | 2022-02-22 | 2022-06-07 | 山东科技大学 | Preparation device and preparation method of mixed wettability sandstone microscopic model |
| CN114594230B (en) * | 2022-02-22 | 2023-10-13 | 山东科技大学 | Preparation device and preparation method of mixed wettability sandstone microscopic model |
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Effective date of registration: 20100420 Address after: Guangdong province Shenzhen city Baoan District town Longhua tenth Industrial Zone tabulaeformis East Ring Road No. 2 two Applicant after: Hongfujin Precise Industry (Shenzhen) Co., Ltd. Co-applicant after: Hon Hai Precision Industry Co., Ltd. Address before: 95054 Santa Stott Avenue, Santa Barbara, 3350, 33, California Applicant before: ICF Technology Co., Ltd. |
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Application publication date: 20090204 |