CN101358831B - Large scale atomic gate nanometer measuring device - Google Patents
Large scale atomic gate nanometer measuring device Download PDFInfo
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- CN101358831B CN101358831B CN2008100703590A CN200810070359A CN101358831B CN 101358831 B CN101358831 B CN 101358831B CN 2008100703590 A CN2008100703590 A CN 2008100703590A CN 200810070359 A CN200810070359 A CN 200810070359A CN 101358831 B CN101358831 B CN 101358831B
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Abstract
The present invention discloses a large-scale atom-lattice nanometer measuring device, and comprises a multi-level shock-absorption system and a base, and is characterized in that a combined shock absorption terrace that is arranged on the base is provided with a nanometer feeding working terrace, and the movable nanometer feeding working terrace is provided with an atom lattice, and the nanometer feeding working terrace drives the atom lattice to move; a probe on a scanning tunnel microscope is arranged above the atom lattice, and the probe is driven by a piezoelectric ceramic driving device to move; a signal collector is connected with the scanning tunnel microscope; a pulse circuit converts the analog signal into a pulse signal to trigger the counter to count the number, and then is inputted into a computer to be processed. The measuring device greatly increases the measuring range and adapts to the requirements of the nanometer component processing technology; the maximum range on the direction of X is 20 mm, and the maximum range on the direction of Y is 20 mm; the nanometer measurement can be performed both on the direction of X and the direction of Y; the measurement range is decided by the maximum distance of the nanometer feeding working terrace.
Description
Technical field
The present invention relates to a kind of atomic gate nanometer measuring device, especially large scale atomic gate nanometer measuring device; It is the instrument of machineries such as Measuring Object surface topography, length, displacement, physical quantity, and its purposes is to do solid surface analysis, atom/molecule assembling, nano measurement and nanoprocessing.
Background technology
Along with the development of manufacturing technology towards microcosmic and high precision direction, nano measurement technology and nanofabrication technique develop rapidly.At present, nano measurement mainly contains 1. scanning tunnel microscope (STM), atomic force microscope (AFM) measurement; 2. X ray interferometer measurement; 3. measuring method such as Fabry-Perot etalon micrometer system and all kinds of optics nano measurements.Scanning tunnel microscope adds bias voltage between probe and measured workpiece, when the gap between probe and workpiece produces tunnel effect during less than 5 nanometers, the electric current that flows through this gap is very responsive to gap length, keep the constant or maintenance clearance constant of tunnel current, by three-dimensional Piezoelectric Ceramic, can obtain body surface three-dimensional size and contour shape.This method can obtain the vertical direction resolution of 0.01nm and the horizontal direction resolution of 0.1nm.The X ray interferometer is to produce diffraction by the x-ray bombardment silicon wafer to measure, because the spacing of lattice of silicon is very stable, is about 0.2nm, can realize nanometer accuracy measurement.Fabry-Perot etalon micrometer system complex structure has very high resolution, can reach 2.1 * 10
-8Nm.Though above measuring method can be carried out the measurement of nanometer or nano-precision, but a common weakness is arranged, be exactly that measurement range is too little, the sweep limit of scanning tunnel microscope is about 10 μ m, the maximum range of Fabry-Perot etalon micrometer system is about 1.1 μ m, the measurement range of X ray interferometer is: 200 μ m are difficult to satisfy the needs that engineering is used.For the nano measurement of large scale, German Heidenhain company is the development and production grating chi that gone out to have nanometer resolution, and its resolution is: 2nm, maximum range is: 20mm, this processing for nano-precision provides the support of measuring technique.But for nanostructures (comprising the processing of atom and molecule level, surface atom reconstruct etc.), because the diameter＜1nm (diameter as silicon atom is 0.2nm) of atom needs more high-resolution measuring technique.
The process technology of nanostructures (comprising the processing of atom and molecule level, surface atom reconstruct etc.) is a kind of process technology that grows up on scanning tunnel microscope (STM), atomic force microscope bases such as (AFM).This technology has immeasurable application prospect.The scientist of American I BM company forms an annulus with 48 atoms with scanning tunnel microscope (STM) on the copper surface, Chinese science family expenses scanning tunnel microscope (STM) is inscribed out map of China on graphite surface, Institute of Chemistry, Academia Sinica has carved the lines that 2000nm is long, 10nm is wide with scanning tunnel microscope (STM), and this technology will have broad application prospects in the manufacturing of VLSI (very large scale integrated circuit).But because the sweep limit of scanning tunnel microscope (STM) is about 10 μ m * 10 μ m, the disposable whole patterns that carve on the integrated circuit (IC) chip that can not be complete, therefore to use this technology and make integrated circuit (IC) chip, need the nano measurement system of development large scale.
In nanometer technology, nano measurement technology, nanofabrication technique and nanostructured are three big research fields of nanometer technology, and the nano measurement technology is the basis of nanometer technology.Therefore, the nanometer measuring device of large scale is an urgent demand of Nano-technology Development.
Summary of the invention
The objective of the invention is to overcome the little weak point of measurement range in the above-mentioned existing nano measurement technology, for nanometer technologies such as nano measurement and nanoprocessing provide a kind of large scale atomic gate nanometer measuring device.
Technical scheme of the present invention can reach by following measure: large scale atomic gate nanometer measuring device comprises multistage vibration insulating system, pedestal; It is characterized in that: the combination vibration reduction platform is arranged on the pedestal; On the combination vibration reduction platform, nanometer feeding worktable is set, on the packaged type nanometer feeding worktable atom grid is set, drive the atom grid during nanometer feeding movable workbench and move; Probe on the scanning tunnel microscope is arranged on atom grid top, and probe moves under piezoelectric ceramic actuator drives; Signal picker is connected with scanning tunnel microscope, and the cycle variation of tunnel current is sent into pulsing circuit after gathering, and pulsing circuit is a pulse signal flip-flop number counting with analog signal conversion, imports COMPUTER CALCULATION again and handles.
Described multistage vibration insulating system constitutes the two-stage spring shock absorption by two shock-absorbing springs that are arranged on the support, constitutes by magnetic vibration insulating system and combination vibration reduction platform again, and shock-absorbing spring is connected with pedestal with the magnetic vibration insulating system.
Large scale atomic gate nanometer measuring device of the present invention with respect to prior art, has following characteristics:
1, increases measurement range greatly, adapted to the needs of nanostructures process technology; Maximum magnitude at directions X is 20mm, is 20mm at the maximum magnitude of Y direction.
2, large scale nanometer measuring device of the present invention all can carry out nano measurement on directions X and Y direction, and the size of measurement range is decided by nanometer feeding worktable range.
3, on large scale nanometer measuring device of the present invention, dispose a nanoprocessing system again, can realize the nanoprocessing of large scale,, can constitute a complete nano measurement and system of processing in conjunction with the CAD/CAM technology.
Description of drawings
The present invention is further illustrated below in conjunction with accompanying drawing:
Fig. 1 is a large scale nanometer measuring device structural representation.
Fig. 2 is a large scale nanometer measuring device measuring principle synoptic diagram.
Fig. 3 is graphite atomic structure (atom grid) synoptic diagram.
Fig. 4 is a piezoelectric ceramics linear stepping motor fundamental diagram.
Embodiment
In Fig. 1,1-shock-absorbing spring, 2-support, 3-magnetic vibration insulating system, 4-pedestal, 5-combination vibration reduction platform, 6-nanometer feeding worktable, 7-atom grid, 8-probe, 9-piezoelectric ceramic actuator, 10-piece of stainless steel, 11-copper billet, 12-magnet, 13-scanning tunnel microscope, 14-signal picker.
Among Fig. 2,14-signal picker, 15-pulsing circuit, 16-counter, 17-computing machine, 18-demonstration printing device.
Large scale atomic gate nanometer measuring device of the present invention, comprise multistage vibration insulating system, this multistage vibration insulating system constitutes the two-stage spring shock absorption by two shock-absorbing springs 1 that are arranged on the support 2, constitute by magnetic vibration insulating system 3 and combination vibration reduction platform 5 again, magnetic vibration insulating system 3 wherein comprises parts such as piece of stainless steel 10, copper billet 11, magnet 12, shock-absorbing spring 1 is connected with pedestal 4 with magnetic vibration insulating system 3, and combination vibration reduction platform 5 is arranged on the pedestal 4; This multistage vibration insulating system can be eliminated various vibration factors in the environment to the influence of measurement mechanism, especially eliminates its influence to pedestal 4, to guarantee measuring accuracy.On combination vibration reduction platform 5 nanometer feeding worktable 6 is set, on the packaged type nanometer feeding worktable 6 atom grid 7 is set, nanometer feeding worktable 6 drives or drives atom grid 7 and moves.Concrete drive unit is the piezoelectric ceramics linear stepping motor among the figure, and the nanometer feeding worktable 6 that its drive is attached thereto moves, and makes atom grid 7 synchronously controlled moving.
Piezoelectric ceramics linear stepping motor drive principle as shown in Figure 4, state 1 expression clamps, and 2 expressions are expanded, and 3 expressions are loosened etc., all are prior aries, are not described further at this.
The material that has strict lattice structure with atomic arrangement such as graphite, silicon is the atom grid, its adjacent two atoms be spaced apart scale, as the atom lattice structure of graphite, its atomic separation is about the atom lattice structure of 0.32nm, silicon, its atomic separation is about 0.2nm.According to tunnel effect principle, when the relative position of the probe of scanning tunnel microscope and atom grid chi changed, tunnel current changed thereupon.When nanometer feeding movable workbench, tunnel current becomes cyclical variation thereupon, when tunnel current changes one-period, the expression movable workbench atomic separation δ.By electronic technology tunnel current is converted into pulse voltage, counts with the pulse voltage flip-flop number again, must arrive displacement: S=N δ (wherein: N is a umber of pulse, and δ is an atomic separation).
Claims (4)
1. large scale atomic gate nanometer measuring device comprises multistage vibration insulating system, pedestal (4); It is characterized in that: combination vibration reduction platform (5) is arranged on the pedestal (4); On combination vibration reduction platform (5), nanometer feeding worktable (6) is set, atom grid (7) are set on the packaged type nanometer feeding worktable (6), drive atom grid (7) when nanometer feeding worktable (6) is mobile and move; Probe (8) on the scanning tunnel microscope (13) is arranged on atom grid (7) top, and probe (8) moves under piezoelectric ceramic actuator (9) drives; Signal picker (14) is connected with scanning tunnel microscope (13), the cycle variation of tunnel current is sent into pulsing circuit (15) after gathering, pulsing circuit (15) is pulse signal flip-flop number (a 16) counting with analog signal conversion, imports computing machine (17) computing again;
Described multistage vibration insulating system constitutes the two-stage spring shock absorption by two shock-absorbing springs (1) that are arranged on the support (2), constitute by magnetic vibration insulating system (3) and combination vibration reduction platform (5), shock-absorbing spring (1) is connected with pedestal (4) with magnetic vibration insulating system (3) again.
2. large scale atomic gate nanometer measuring device according to claim 1 is characterized in that: atom grid (7) constitute for the material with strict lattice structure.
3. large scale atomic gate nanometer measuring device according to claim 1 and 2 is characterized in that: nanometer feeding worktable (6) drives by the piezoelectric ceramics linear stepping motor.
4. large scale atomic gate nanometer measuring device according to claim 1 is characterized in that: computing machine (17) is connected with showing printing device (18), and the computing result is shown or printing by showing printing device (18).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100703590A CN101358831B (en) | 2008-09-23 | 2008-09-23 | Large scale atomic gate nanometer measuring device |
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| CN2008100703590A CN101358831B (en) | 2008-09-23 | 2008-09-23 | Large scale atomic gate nanometer measuring device |
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| Publication Number | Publication Date |
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| CN101358831A CN101358831A (en) | 2009-02-04 |
| CN101358831B true CN101358831B (en) | 2011-01-26 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101846760B (en) * | 2010-04-09 | 2012-02-01 | 重庆理工大学 | Method for making nano-grating |
| CN102384986A (en) * | 2011-11-01 | 2012-03-21 | 浙江大学 | Scanning tunneling microscope having large-scope and high depth-to-width ratio measurement capabilities |
| CN103245801B (en) * | 2013-05-04 | 2016-05-25 | 邹华兵 | Scanning-tunnelling nano-precision measuring instrument |
| CN103292742B (en) * | 2013-05-04 | 2016-03-02 | 邹华兵 | Scanning-tunnelling ultraprecise angel measuring instrument |
| CN115752221B (en) * | 2023-01-07 | 2023-04-11 | 山东省三鼎汽车配件有限公司 | Brake disc roundness detection device |
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