CN101354868B - Light sensing circuit and LCD device - Google Patents
Light sensing circuit and LCD device Download PDFInfo
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- CN101354868B CN101354868B CN 200710075299 CN200710075299A CN101354868B CN 101354868 B CN101354868 B CN 101354868B CN 200710075299 CN200710075299 CN 200710075299 CN 200710075299 A CN200710075299 A CN 200710075299A CN 101354868 B CN101354868 B CN 101354868B
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- light sensing
- electric capacity
- film transistor
- sensing circuit
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Abstract
The invention provides an optical sensing circuit and a liquid crystal display device. The optical sensing circuit comprises a photosensitive thin film transistor, a plurality of resistors, a plurality of capacitors and a plurality of output ends, each capacitor comprises a grounding end and an un-grounding end, wherein the grounding end is grounded and the non-grounding end is connected to a drain electrode of the photosensitive thin film transistor through a corresponding resistor. The output ends are respectively connected to un-grounding ends of the capacitors one to one; and the time required to complete the charging of the plurality of capacitors is different. The optical sensing circuit is simple in manufacturing method and low in cost.
Description
Technical field
The invention relates to a kind of light sensing circuit and adopt the liquid crystal indicator of this light sensing circuit.
Background technology
Display device generally comprises liquid crystal indicator, plasm display device and organic electroluminescence display device etc., and its widespread use comes among various information, communication, the consumption electronic products.Liquid crystal indicator because of have low diathermaneity, characteristics such as volume is compact and power consumption is low, widespread use comes fields such as mobile phone, personal digital assistant, mobile computer, personal computer and TV at present.Liquid crystal indicator is as a kind of display device, and its display brightness is a Specifeca tion speeification.For satisfying the display brightness demand of different situations, need adjust the brightness of liquid crystal indicator.
See also Fig. 1, it is a kind of structural representation of prior art liquid crystal indicator.This liquid crystal indicator 1 comprises a display panels 11 and a module 12 backlight, this display panels 11 and these module 12 range upon range of settings backlight.This display panels 11 comprises a light sensing system (see figure 2), and it is connected to this module 12 backlight, controls this module 12 luminous intensities backlight through sensing ambient light power.
Please consult Fig. 2 together, it is the module map of the light sensing system of liquid crystal indicator shown in Figure 1.This light sensing system 111 comprises in regular turn a photo-sensitive cell 112, an A/D converter (being analog/digital converter) 113 and one control circuit 114 that connects.The power of these photo-sensitive cell 112 sense ambient light according to the corresponding current sensor that is directly proportional that produces of ambient light intensity, is delivered to this A/D converter 113.Because this current sensor is a simulating signal, this A/D converter 113 is converted into digital signal and delivers to this control circuit 114.This control circuit 114 makes it be operated in the brightness of mating with current environment light according to the brightness of this module 12 backlight of this Digital Signals.
But; This A/D converter 113 is that individual chips and its price are higher, and in these display panels 11 manufacture processes, the attaching of this A/D converter 113 and the manufacturing approach of binding are complicated; Simultaneously, adopt liquid crystal indicator 1 cost of this A/D converter 113 higher.
Summary of the invention
In order to solve above-mentioned light sensing circuit cost problem of higher, be necessary to provide a kind of lower-cost light sensing circuit.
Simultaneously, also be necessary to provide a kind of manufacturing approach simple and lower-cost liquid crystal indicator.
A kind of light sensing circuit; It comprises a photosensitive film transistor, a plurality of resistance, a plurality of electric capacity and a plurality of output terminal; Each electric capacity comprises an earth terminal and a non-earth terminal, this earth terminal ground connection, and this non-earth terminal is connected to the drain electrode of this photosensitive film transistor through corresponding resistance; These a plurality of output terminals are connected to the non-earth terminal of corresponding electric capacity one by one, and it is different that required time is accomplished in these a plurality of electric capacity chargings.
A kind of liquid crystal indicator; It comprises that one first substrate, second substrate, relative with it are clipped in liquid crystal layer between this two substrate, are arranged on this first substrate near the chromatic filter layer on this liquid crystal layer surface be arranged on the light sensing circuit of this second substrate near this liquid crystal layer surface; This chromatic filter layer comprises a plurality of spaced filter units and a black matrix"; This black matrix" this filter unit of interval also extends to this first substrate edges place, and this light sensing circuit comprises a photosensitive film transistor, a plurality of resistance, a plurality of electric capacity and a plurality of output terminal, and each electric capacity comprises an earth terminal and a non-earth terminal; This earth terminal ground connection; The corresponding resistance of this non-earth terminal process is connected to the drain electrode of this photosensitive film transistor, and these a plurality of output terminals are connected to the non-earth terminal of corresponding electric capacity one by one, and it is different that required times are accomplished in these a plurality of electric capacity chargings; This black matrix" comprises at least one opening, and this photosensitive film transistor is corresponding with this opening.
A kind of light sensing circuit; It comprises a plurality of sub-light sensing circuits; Each sub-light sensing circuit comprises a photosensitive film transistor, a resistance and an electric capacity, and each electric capacity comprises an earth terminal and a non-earth terminal, this earth terminal ground connection; This non-this resistance of earth terminal process is connected to the drain electrode of this photosensitive film transistor, and the electric capacity charging of these a plurality of sub-light sensing circuits is accomplished required time and increased in regular turn.
A kind of liquid crystal indicator; It comprises that one first substrate, second substrate, relative with it are clipped in liquid crystal layer between this two substrate, are arranged on this first substrate near the chromatic filter layer on this liquid crystal layer surface be arranged on the light sensing circuit of this second substrate near this liquid crystal layer surface; This chromatic filter layer comprises a plurality of spaced filter units and a black matrix"; This black matrix" this filter unit of interval also extends to this first substrate edges place, and this light sensing circuit comprises that it comprises a plurality of sub-light sensing circuits, and each sub-light sensing circuit comprises a photosensitive film transistor, a resistance and an electric capacity; Each electric capacity comprises an earth terminal and a non-earth terminal; This earth terminal ground connection, this non-this resistance of earth terminal process is connected to the drain electrode of this photosensitive film transistor, and the electric capacity charging of these a plurality of sub-light sensing circuits is accomplished required time and is increased in regular turn; This black matrix" comprises a plurality of openings, and this photosensitive film transistor is corresponding one by one with this opening.
Compared with prior art; Light sensing circuit of the present invention is owing to adopt this circuit design to make these a plurality of electric capacity charging completion required times different; This photosensitive film transistor can be exported different electric currents according to ambient light intensity; This different electric current forms the digital signal of different charged states as output to these a plurality of electric capacity chargings, and the use of saving analog/digital converter makes cost lower.
Compared with prior art, display device of the present invention makes it export digital signal corresponding according to ambient light intensity owing to adopt the design of this light sensing circuit, saves the installation and the use of analog/digital converter, makes manufacturing approach simple and cost is lower.
Description of drawings
Fig. 1 is a kind of structural representation of prior art liquid crystal indicator.
Fig. 2 is the module map of the light sensing system of liquid crystal indicator shown in Figure 1.
Fig. 3 is the structural representation of liquid crystal indicator first embodiment of the present invention.
Fig. 4 is the planar structure synoptic diagram of liquid crystal indicator second substrate shown in Figure 3.
Fig. 5 is the module map of the light sensing system of liquid crystal indicator shown in Figure 3.
Fig. 6 is the circuit diagram of the light sensing circuit of light sensing system shown in Figure 5.
Fig. 7 is the synoptic diagram of liquid crystal indicator second embodiment of the present invention.
Fig. 8 is the structural representation of liquid crystal indicator the 3rd embodiment of the present invention.
Fig. 9 is the circuit diagram of the light sensing circuit of liquid crystal indicator shown in Figure 8.
Embodiment
See also Fig. 3, it is the structural representation of liquid crystal indicator first embodiment of the present invention.This liquid crystal indicator 2 comprises the module backlight 22 of a display panels 21 and a setting range upon range of with it.This display panels 21 comprises second substrate 221 that one first substrate 211, is relative with it and is clamped in this two substrate 211, the liquid crystal layer between 221 231.
This first substrate 211 is provided with a chromatic filter layer 212 near the surface of this liquid crystal layer 231.This chromatic filter layer 212 comprises a plurality of red filter unit (not indicating) that is rectangular periodic intervals and arranges, a plurality of green filter unit (not indicating), a plurality of blue filter unit (not indicating) and is arranged on the black matrix" 213 of this first substrate 211.This black matrix" 213 is this red, green, blue look filter units and extend to this first substrate, 211 edges at interval, and these black matrix" 213 edges comprise an opening 214.
Please consult Fig. 4 together, it is the planar structure synoptic diagram of second substrate 221 shown in Figure 3.This second substrate 221 is provided with many sweep traces that are parallel to each other 222, the data line 223 that intersects vertically with this sweep trace 222, a plurality of thin film transistor (TFT)s 224 and the light sensing system 225 that is positioned at this sweep trace 222 and these data line 223 intersections transferred near the surface of this liquid crystal layer 231 more.
Please consult Fig. 5 together, it is the module map of light sensing system shown in Figure 4.This light sensing system 225 comprises a light sensing circuit 226 and a control circuit 227.This light sensing circuit 226 is through the power of opening 214 sense ambient light of this black matrix" 213; Deliver to this control circuit 227 according to the different digital signal of the corresponding generation of ambient light intensity; This control circuit 227 makes it be operated in the brightness of mating with current environment light according to the brightness of this module 22 backlight of this Digital Signals.
Please consult Fig. 6 together, it is the circuit diagram of the light sensing circuit of light sensing system shown in Figure 5.This light sensing circuit 226 comprises a photosensitive film transistor 241, resistance R 1～Rn capacitor C 1～Cn different with a plurality of capacitances that a plurality of resistance value is different.The end ground connection of each capacitor C 1～Cn, the other end is defined as output end vo ut1～Voutn respectively.This output end vo ut1～Voutn is connected to the drain electrode of this photosensitive film transistor 241 respectively through corresponding resistance R a 1～Rn.The position of this photosensitive film transistor 241 can fully shine above that external environment light to opening 214 that should black matrix" 213.
The principle of work of this light sensing circuit 226 is following:
When the sensing ambient light; The source electrode of this photosensitive film transistor 241 loads a high voltage VH; Its grid also loads a high voltage VG1 (VG1＞VH) so that this photosensitive film transistor 241 is opened, make its source electrode-drain current be this capacitor C 1～Cn charging through this resistance R 1～Rn respectively.Because the capacitance of this capacitor C 1～Cn is different with the resistance value of resistance R 1～Rn, so the parameters such as aforementioned capacitance and resistance value of can arranging in pairs or groups increase the duration of charging of each capacitor C 1～Cn in regular turn.Again since the source electrode-drain current of this photosensitive film transistor 241 be directly proportional with the intensity of its suffered surround lighting irradiation, so under different environment light and the duration of charging T that fixes, this output end vo ut1～Voutn exports different voltages with different.Because the voltage of this capacitor C 1～Cn when being full of is approximately VH, this output end vo ut1～Voutn voltage is that VH representes 1 so can make, and voltage representes 0 less than VH.Thereby the intensity according to the surround lighting irradiation is different, and this output end vo ut1～Voutn exports different digital values, and can represent the ambient light intensity on n+1 rank altogether.
For example, when surround lighting was more weak, the source electrode-drain current of this photosensitive film transistor 241 was less, and this capacitor C 1～C3 is full of in time T, and other capacitor C 4～Cn underfill is so the signal of this output end vo ut1～Voutn output is 1110000...00; When surround lighting was strong, the source electrode-drain current of this photosensitive film transistor 241 was bigger, and this capacitor C 1～C5 is full of in identical time T, and other capacitor C 6～Cn underfill is so the signal of this output end vo ut1～Voutn output is 1111100...00.
When this surround lighting of sensing not, the source ground of this photosensitive film transistor 241, this capacitor C 1～Cn is through the drain electrode and source electrode discharge of this photosensitive film transistor 241, in order to measurement next time.
Compared to prior art; Liquid crystal indicator 2 of the present invention is owing to adopt these light sensing circuit 226 designs to make these a plurality of capacitor C 1～Cn charging completion required times different; This photosensitive film transistor 241 can be exported different electric currents according to ambient light intensity; This different electric current forms the digital signal of different charged states as output to these a plurality of capacitor C 1～Cn chargings, makes it under the condition of normal output digital signal, has saved A/D converter; And this light sensing circuit 226 can form when the elements such as sweep trace 222, data line 223 and thin film transistor (TFT) 224 on forming this second substrate 221 together, thereby cost is lower.
Seeing also Fig. 7, is the synoptic diagram of liquid crystal indicator second embodiment of the present invention.The difference of the liquid crystal indicator 2 of itself and first embodiment is: the light sensing circuit 326 of this liquid crystal indicator (indicating) further comprises a plurality of discharge thin film transistor (TFT) Tg1～Tgn; Its drain electrode is connected to output end vo ut1～Voutn of corresponding capacitor C 1～Cn, source ground.
When the sensing ambient light; The source electrode of this photosensitive film transistor 341 loads a high voltage VH; Its grid also loads a high voltage VG1, and (VG1＞VH) so that this photosensitive film transistor 341 is opened, the source gate of this discharge thin film transistor (TFT) Tg1～Tgn loads a low-voltage VG2 (VG2＜=0) closes this discharge thin film transistor (TFT) Tg1～Tgn.
When sensing ambient light not; The grid of this photosensitive film transistor 341 load a low-voltage VG1 ' (VG1 '＜=VH) it is closed; The grid of this discharge thin film transistor (TFT) Tg1～Tgn loads a high voltage VG2, and (VG2＞VH) it is opened is so that this capacitor C 1～Cn discharge.
Compared to first embodiment,, and, make the velocity of discharge of this light sensing circuit 326 faster directly through the direct ground connection of this discharge thin film transistor (TFT) Tg1～Tgn because this light sensing circuit 326 need not pass through this resistance R 1～Rn discharge.
Please consult Fig. 8 and Fig. 9 together, Fig. 8 is the structural representation of liquid crystal indicator the 3rd embodiment of the present invention, and Fig. 9 is the circuit diagram of the light sensing circuit of liquid crystal indicator shown in Figure 8.The difference of the liquid crystal indicator of this liquid crystal indicator 4 and second embodiment is: the black matrix" 413 of this liquid crystal indicator 4 comprises a plurality of openings 414, and its light sensing circuit 426 comprises a plurality of photosensitive film transistor T1～Tn, a plurality of discharge thin film transistor (TFT) Tg1～Tgn, resistance R 1～Rn and a plurality of capacitance capacitor C 1～Cn that a plurality of resistance value is different.The end ground connection of each capacitor C 1～Cn, the other end is defined as output end vo ut1～Voutn respectively.This output end vo ut1～Voutn is connected to the drain electrode of the photosensitive film transistor T1～Tn of a correspondence respectively through corresponding resistance R a 1～Rn; One end of the non-ground connection of each capacitance capacitor C 1～Cn is connected to the drain electrode of corresponding discharge thin film transistor (TFT) Tg1～Tgn; The source ground of each discharge thin film transistor (TFT) Tg1～Tgn, thus a plurality of separate sub-light sensing circuits 427 formed.The position of this photosensitive film transistor 441 is corresponding one by one with the opening 414 of this black matrix" 413, makes external environment light can fully be radiated at each photosensitive film transistor T1～Tn.
Compared to first embodiment, this liquid crystal indicator 4 can independently be arranged on a plurality of zones respectively because should be a plurality of sub-light sensing circuit 427 is separate, make the surround lighting sensing more comprehensive, also can make full use of the space make design more convenient.
It is said that the present invention is not limited to above-mentioned embodiment, also can have other change design.Can save this a plurality of discharge thin film transistor (TFT) Tg1～Tgn like this liquid crystal indicator 4, the principle of work of the liquid crystal indicator after saving is similar to this liquid crystal indicator 2.This liquid crystal indicator 2 can also utilize the identical resistance R 1～Rn of a plurality of resistances different capacitor C 1～Cn of a plurality of capacitances that arranges in pairs or groups; Or utilize the different resistance R 1～Rn of a plurality of resistances identical capacitor C 1～Cn of a plurality of capacitances that arranges in pairs or groups, realize making the duration of charging of each capacitor C 1～Cn different.
Claims (10)
1. light sensing circuit; It is characterized in that: this light sensing circuit comprises a photosensitive film transistor, a plurality of resistance, a plurality of electric capacity and a plurality of output terminal, and each electric capacity comprises an earth terminal and a non-earth terminal, this earth terminal ground connection; This non-earth terminal is connected to the drain electrode of this photosensitive film transistor through corresponding resistance; These a plurality of output terminals are connected to the non-earth terminal of corresponding electric capacity one by one, and the source electrode-drain current of this photosensitive film transistor is different for these a plurality of electric capacity charging completion required times, and these a plurality of output terminals are respectively in a digital value 1 and 0 conversion of a digital value; When this digital value 1; This corresponding electric capacity is full of, when this digital value 0, and the electric capacity underfill that this is corresponding.
2. light sensing circuit as claimed in claim 1; It is characterized in that: this light sensing circuit further comprises a plurality of discharge thin film transistor (TFT)s; The non-earth terminal of this of each electric capacity is connected to the drain electrode of corresponding discharge thin film transistor (TFT), the source ground of this discharge thin film transistor (TFT).
3. light sensing circuit as claimed in claim 1 is characterized in that: the capacitance of these a plurality of electric capacity is different.
4. light sensing circuit as claimed in claim 1 is characterized in that: the resistance value of these a plurality of resistance is different.
5. liquid crystal indicator; It comprises that one first substrate, second substrate, relative with it are sandwiched in liquid crystal layer between this two substrate, are arranged on this first substrate near the chromatic filter layer on this liquid crystal layer surface be arranged on the light sensing circuit of this second substrate near this liquid crystal layer surface; This chromatic filter layer comprises a plurality of spaced filter units and a black matrix", and this black matrix" this filter unit of interval also extends to this first substrate edges place, and it is characterized in that: this light sensing circuit comprises a photosensitive film transistor, a plurality of resistance, a plurality of electric capacity and a plurality of output terminal; Each electric capacity comprises an earth terminal and a non-earth terminal; This earth terminal ground connection, the corresponding resistance of this non-earth terminal process is connected to the drain electrode of this photosensitive film transistor, and these a plurality of output terminals are connected to the non-earth terminal of corresponding electric capacity one by one; Source electrode-the drain current of this photosensitive film transistor is different for these a plurality of electric capacity charging completion required times; This black matrix" comprises at least one opening, and this photosensitive film transistor is corresponding with this opening, and these a plurality of output terminals are respectively in a digital value 1 and 0 conversion of a digital value; When this digital value 1; This corresponding electric capacity is full of, when this digital value 0, and the electric capacity underfill that this is corresponding.
6. light sensing circuit; It is characterized in that: this light sensing circuit comprises a plurality of sub-light sensing circuits, and each sub-light sensing circuit comprises a photosensitive film transistor, a resistance and an electric capacity, and each electric capacity comprises an earth terminal and a non-earth terminal; This earth terminal ground connection; This non-this resistance of earth terminal process is connected to the drain electrode of this photosensitive film transistor, and the source electrode-drain current of this photosensitive film transistor is accomplished required time for the electric capacity charging of these a plurality of sub-light sensing circuits and increased in regular turn, and these a plurality of output terminals are respectively in a digital value 1 and 0 conversion of a digital value; When this digital value 1; This corresponding electric capacity is full of, when this digital value 0, and the electric capacity underfill that this is corresponding.
7. light sensing circuit as claimed in claim 6; It is characterized in that: each sub-light sensing circuit further comprises a discharge thin film transistor (TFT); The non-earth terminal of this of this electric capacity is connected to the drain electrode of corresponding discharge thin film transistor (TFT), the source ground of this discharge thin film transistor (TFT).
8. light sensing circuit as claimed in claim 6 is characterized in that: the capacitance of the electric capacity of these a plurality of sub-light sensing circuits is different.
9. light sensing circuit as claimed in claim 6 is characterized in that: the resistance value of the resistance of these a plurality of sub-light sensing circuits is different.
10. liquid crystal indicator; It comprises that one first substrate, second substrate, relative with it are sandwiched in liquid crystal layer between this two substrate, are arranged on this first substrate near the chromatic filter layer on this liquid crystal layer surface be arranged on the light sensing circuit of this second substrate near this liquid crystal layer surface; This chromatic filter layer comprises a plurality of spaced filter units and a black matrix", and this black matrix" this filter unit of interval also extends to this first substrate edges place, and it is characterized in that: this light sensing circuit comprises that it comprises a plurality of sub-light sensing circuits; Each sub-light sensing circuit comprises a photosensitive film transistor, a resistance and an electric capacity; Each electric capacity comprises an earth terminal and a non-earth terminal, this earth terminal ground connection, and this non-earth terminal is connected to the drain electrode of this photosensitive film transistor through this resistance; Source electrode-the drain current of this photosensitive film transistor is accomplished required time for the electric capacity charging of these a plurality of sub-light sensing circuits and is increased in regular turn; In a digital value 1 and 0 conversion of a digital value, when this digital value 1, this corresponding electric capacity is full of these a plurality of output terminals respectively; When this digital value 0; The electric capacity underfill that this is corresponding, this black matrix" comprises a plurality of openings, this photosensitive film transistor is corresponding one by one with this opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710075299 CN101354868B (en) | 2007-07-25 | 2007-07-25 | Light sensing circuit and LCD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710075299 CN101354868B (en) | 2007-07-25 | 2007-07-25 | Light sensing circuit and LCD device |
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| Publication Number | Publication Date |
|---|---|
| CN101354868A CN101354868A (en) | 2009-01-28 |
| CN101354868B true CN101354868B (en) | 2012-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200710075299 Expired - Fee Related CN101354868B (en) | 2007-07-25 | 2007-07-25 | Light sensing circuit and LCD device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475198B (en) * | 2013-05-15 | 2015-03-01 | Au Optronics Corp | Light sensing circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114582294B (en) * | 2020-11-30 | 2023-08-15 | 京东方科技集团股份有限公司 | Display device and medical equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5381235A (en) * | 1991-12-26 | 1995-01-10 | Mitsubishi Denki Kabushiki Kaisha | Three-dimensional shape measuring device and three-dimensional shape measuring sensor |
| CN1699936A (en) * | 2004-05-21 | 2005-11-23 | 三洋电机株式会社 | Light quantity detection circuit and display panel using the same |
| CN1734241A (en) * | 2004-07-12 | 2006-02-15 | 三洋电机株式会社 | Circuit detecting ambient light |
-
2007
- 2007-07-25 CN CN 200710075299 patent/CN101354868B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5381235A (en) * | 1991-12-26 | 1995-01-10 | Mitsubishi Denki Kabushiki Kaisha | Three-dimensional shape measuring device and three-dimensional shape measuring sensor |
| CN1699936A (en) * | 2004-05-21 | 2005-11-23 | 三洋电机株式会社 | Light quantity detection circuit and display panel using the same |
| CN1734241A (en) * | 2004-07-12 | 2006-02-15 | 三洋电机株式会社 | Circuit detecting ambient light |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2003-133870A 2003.05.09 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475198B (en) * | 2013-05-15 | 2015-03-01 | Au Optronics Corp | Light sensing circuit |
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| CN101354868A (en) | 2009-01-28 |
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