CN101351297A - Low melting temperature compliant solders - Google Patents
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- CN101351297A CN101351297A CNA2006800326090A CN200680032609A CN101351297A CN 101351297 A CN101351297 A CN 101351297A CN A2006800326090 A CNA2006800326090 A CN A2006800326090A CN 200680032609 A CN200680032609 A CN 200680032609A CN 101351297 A CN101351297 A CN 101351297A
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Abstract
Low melting temperature compliant solders are disclosed. In one particular exemplary embodiment, a low melting temperature compliant solder alloy comprises from about 91.5% to about 97.998% by weight tin, from about 0.001% to about 3.5% by weight silver, from about 0.0% to about 1.0% by weight copper, and from about 2.001% to about 4.0% by weight indium.
Description
Technical field
[001] disclosure relate generally to flux composition relates more specifically to low melting temperature compliant solders.
Background technology
[002] characteristic size along with semiconductor devices continues to dwindle, and low-k (low K) material is used to substitute conventional insulator (for example, silica) more continually in the manufacturing of semiconductor devices.At present, (K～2.5-3) is the industry first-selection of low-K material in the manufacturing of semiconductor devices to carbon doped silicon oxide (SiOC).
[003] carbon doped silicon oxide (SiOC) generally includes many pores, to improve low K performance.Yet these pores make this low-K material be highly brittle and are easy to fracture.Therefore, during Electronic Packaging and assembly technology, known this low-K material is owing to the stress that produces in the welding process breaks.Particularly, solder paste reflow process requires reflux temperature on the liquidus temperature of solder alloy approximately 20-30 ℃.For example, for the Sn63Pb37 soldering paste of routine, reflux temperature is usually near 210-230 ℃.Yet the most proximad the transformation of Sn-Ag-Cu unleaded solder alloy has caused reflux temperature to increase to about 235-260 ℃ of typical case greatly.In the table that liquidus temperature of some and yield strength are summarised in Fig. 1 in these Sn-Ag-Cu unleaded solder alloys.
[004] because the mismatch of thermal coefficient of expansion between the higher liquidus temperature (＞218 ℃) of Sn-Ag-Cu unleaded solder alloy and these Sn-Ag-Cu unleaded solder alloys and the low-K material, therefore in low-K material, produce heavily stressedly in the cooling period of high temperature reflux technology, and in low-K material, cause breaking and damaging.Consider above-mentionedly, the solder alloy with lower fusion temperature needs.
[005] except the demand to solder alloy with low liquidus temperature, it is vital with the ability that adapts to possible stress or impact load for the reliability of the electronic device that adopts low-K material that solder flux carries out deformation.Generally speaking, the solder flux with low yield strength is more soft, and is easier to deformation, to discharge stress.Common low melting temperature solder alloy mainly is made up of the Sn-Ag-In and the Sn-Ag-Cu-In solder alloy of common 91Sn9Zn solder alloy and granted patent at present.Yet, to compare with the Sn-Ag-Cu solder alloy, these common low melting temperature solder alloy are on yield strength and rigidity greatly at least 50%.Brief overview to these common low melting temperature solder alloy is provided in the table of Fig. 2.
[006] as shown in Figure 2, the 91Sn9Zn solder flux has 199 ℃ fusing point, and this solder flux stone (yield strength of 9.1ksi) and unusual rigidity.Equally as shown in Figure 2, the Sn-Ag-In of granted patent and Sn-Ag-Cu-In solder alloy also are stone and rigidity.Particularly, United States Patent (USP) 5,580,520 disclose have (71.5-91.9) %Sn, (2.6-3.3) %Ag and (4.8-25.9) solder alloy of %In, it has the fusing point below 213 ℃, but really up to the mark for the low-K material that is used for embedding semiconductor devices.In addition, United States Patent (USP) 6,176,947 disclose have (76-96) %Sn, (0.2-2.5) %Cu, (2.5-4.5) %Ag and (6-12) solder alloy of %In, it has the liquidus temperature below 215 ℃, but has proved for rigidity too for the low-K material that embeds semiconductor devices uses.Similarly, United States Patent (USP) 6,843,862 disclose have (88.5-93.5) %Sn, (3.5-4.5) %Ag, (2-6) %In, (0.3-1) %Cu and can reach 0.5% antioxidant and the alloy composite of anti-skinning additive.This alloy is the really up to the mark and rigidity too for the low-K material that is used for embedding semiconductor devices equally.In addition, United States Patent (USP) 6,689,488 have disclosed a kind of solder alloy, it has (1-3.5) %Ag, (0.1-0.7) %Cu, (0.1-2) %In, surplus is Sn, but this alloy composite has demonstrated or fusion temperature is too high, or for the low-K material that is used for embedding semiconductor devices rigidity too.
[007] considers aforementioned content, provide the low melting temperature compliant solders that overcomes above-mentioned deficiency and defective to expect.
Summary of the invention
[008] low melting temperature compliant solders is disclosed.In a concrete illustrative embodiments, the low melting temperature compliant solders alloy comprises: about by weight 91.5% to about 97.998% tin, about 0.001% to about 3.5% silver, about 0.0% to about 1.0% copper and about by weight 2.001% to about 4.0% indium by weight by weight.
[009] according to the others of this concrete illustrative embodiments, the low melting temperature compliant solders alloy can comprise about at the most 3.0% indium by weight.
[010] according to this further aspect of concrete illustrative embodiments, the low melting temperature compliant solders alloy can comprise about at the most 2.5% indium by weight.
[011] according to the still further aspect of this concrete illustrative embodiments, the low melting temperature compliant solders alloy can further comprise the impurity of trace.
[012] according to the still further aspect of this concrete illustrative embodiments, the low melting temperature compliant solders alloy does not comprise the impurity of trace.
[013] according to the other aspect of this concrete illustrative embodiments, the low melting temperature compliant solders alloy can further comprise by weight from about 0.01% to about 3.0% at least aly be selected from following adulterant: zinc (Zn), nickel (Ni), iron (Fe), cobalt (Co), germanium (Ge), phosphorus (P), aluminium (Al), antimony (Sb), cadmium (Cd), tellurium (Te), bismuth (Bi), platinum (Pt), rare earth element and their combination, to improve non-oxidizability and to increase physical property and thermal fatigue resistance.
[014] according to the still other aspect of this concrete illustrative embodiments, described rare earth element can be selected from cerium (Ce), lanthanum (La), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), actinium (Ac), thorium (Th), protactinium (Pa) and their combination.
[015] in another concrete illustrative embodiments, the low melting temperature compliant solders alloy comprises: about by weight 89.7% to about 94.499% tin, about 3.5% to about 6.0% silver, about 0.0% to about 0.3% copper and about by weight 2.001% to about 4.0% indium by weight by weight.
[016] according to the others of this concrete illustrative embodiments, the low melting temperature compliant solders alloy can comprise about at the most 3.0% indium by weight.
[017] according to this further aspect of concrete illustrative embodiments, the low melting temperature compliant solders alloy can comprise about at the most 2.5% indium by weight.
[018] according to the still further aspect of this concrete illustrative embodiments, the low melting temperature compliant solders alloy can further comprise the impurity of trace.
[019] according to the still further aspect of this concrete illustrative embodiments, the low melting temperature compliant solders alloy does not comprise the impurity of trace.
[020] according to the other aspect of this concrete illustrative embodiments, the low melting temperature compliant solders alloy can further comprise: by weight from about 0.01% to about 3.0% at least aly be selected from following adulterant: zinc (Zn), nickel (Ni), iron (Fe), cobalt (Co), germanium (Ge), phosphorus (P), aluminium (Al), antimony (Sb), cadmium (Cd), tellurium (Te), bismuth (Bi), platinum (Pt), rare earth element and their combination, to improve non-oxidizability and to increase physical property and thermal fatigue resistance.
[021] according to the still other aspect of this concrete illustrative embodiments, described rare earth element can be selected from cerium (Ce), lanthanum (La), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), actinium (Ac), thorium (Th), protactinium (Pa) and their combination.
[022] present, the disclosure will be with reference to as shown in the drawing its illustrative embodiments more detailed description in addition.Although disclosure reference example embodiment is described below, should be appreciated that the disclosure is not limited to this.Obtain this paper instruction one of skill in the art will recognize that other enforcement, change and embodiment and other use field, these are within the scope of the present disclosure described herein, and about these, the disclosure can have significant practicality.
The accompanying drawing summary
[023] understand the disclosure more comprehensively for helping, with reference now to accompanying drawing, wherein identical key element is with identical numeric reference.These accompanying drawings should not be interpreted into the restriction disclosure, and intention only is exemplary.
[024] Fig. 1 shows the liquidus temperature of several Sn-Ag-Cu unleaded solder alloys and the table of yield strength.
[025] Fig. 2 shows the liquidus temperature of several frequently seen low melting temperature solder alloy and the table of yield strength.
[026] Fig. 3 is a curve map, and it shows the influence that indium (In) adds standard Sn-Ag-Cu (SAC) alloy to.
[027] Fig. 4 shows the Sn-1Ag-0.5Cu alloy composite of interpolation indium (In) with respect to the liquidus temperature of indium (In) concentration and the table of yield strength.
[028] Fig. 5 shows the Sn-2Ag-0.5Cu alloy composite of interpolation indium (In) with respect to the liquidus temperature of indium (In) concentration and the table of yield strength.
[029] Fig. 6 shows the Sn-2.5Ag-0.5Cu alloy composite of interpolation indium (In) with respect to the liquidus temperature of indium (In) concentration and the table of yield strength.
[030] Fig. 7 shows the Sn-3Ag-0.5Cu alloy composite of interpolation indium (In) with respect to the liquidus temperature of indium (In) concentration and the table of yield strength.
[031] Fig. 8 shows the Sn-4Ag-0.2Cu alloy composite of interpolation indium (In) with respect to the liquidus temperature of indium (In) concentration and the table of yield strength.
[032] Fig. 9 shows the curve map of Sn-Ag-Cu-In alloy phase for the yield strength of indium (In) concentration.
[033] Figure 10 shows the fast phase of SEM (SEM), and wherein energy-dispersive spectroscopy (EDS) is used to be identified in the main reinforcing particle in the Sn-Ag-Cu alloy composite that adds indium (In).
The detailed description of illustrative embodiments
[034] with reference to figure 3, it shows and adds the influence of indium (In) to standard Sn-Ag-Cu (SAC) alloy.As shown in Figure 3, indium (In) is added into standard Sn-Ag-Cu (SAC) alloy and causes liquidus temperature to descend.Particularly, when indium (In) was added into standard Sn-Ag-Cu (SAC) alloy with the amount more than 2%, the liquidus temperature of resulting Sn-Ag-Cu-In alloy was lowered to below the liquidus temperature of standard Sn-Ag-Cu (SAC) alloy.Therefore, using indium (In) concentration in the semiconductor devices that adopts low-K material can be favourable at the Sn-Ag-Cu-In alloy more than 2%.
[035] yet, add indium (In) and also cause yield strength to increase sharply to standard Sn-Ag-Cu (SAC) alloy, reason is solution hardening, and high strength Sn-Ag-Cu-In alloy may cause heavily stressed and unacceptable high defective.Therefore, definite compositing range that produces the Sn-Ag-Cu-In alloy of low liquidus temperature, low yield strength and low rigidity will be favourable.In fact, the disclosure relates to the Sn-Ag-Cu-In alloy composite that shows low liquidus temperature, low yield strength and low rigidity.This class Sn-Ag-Cu-In alloy composite comprises: Ag (0.001-3.5) %, Cu (0-1) %, In (2.001-4) %, and surplus is Sn, and Ag (3.5-6) %, Cu (0-0.3) %, In (2.001-4) %, surplus is Sn.These Sn-Ag-Cu-In alloy compositions derive from a series of test of many times of example as follows.
Embodiment 1
[036] the Sn-1Ag-0.5Cu alloy composite of interpolation indium (In) is illustrated in the table of Fig. 4 with respect to the liquidus temperature and the yield strength of indium (In) concentration.The yield strength of resulting alloy composite increases sharply along with the increase of indium (In) concentration.
[037] the Sn-2Ag-0.5Cu alloy composite of interpolation indium (In) is illustrated in the table of Fig. 5 with respect to the liquidus temperature and the yield strength of indium (In) concentration.Along with the concentration of indium (In) increases to 2.5%, the yield strength of resulting alloy composite keeps constant.Yet when the concentration of indium (In) surpassed 2.5%, yield strength increased along with the increase of indium (In) concentration.
[038] the Sn-2.5Ag-0.5Cu alloy composite of interpolation indium (In) is illustrated in the table of Fig. 6 with respect to the liquidus temperature and the yield strength of indium (In) concentration.Along with the concentration of indium (In) increases to approximately 2.5%, the yield strength of resulting alloy composite keeps constant.Yet when the concentration of indium (In) surpassed 2.5%, yield strength increased along with the increase of indium (In) concentration.
[039] the Sn-3Ag-0.5Cu alloy composite of interpolation indium (In) is illustrated in the table of Fig. 7 with respect to the liquidus temperature and the yield strength of indium (In) concentration.Along with the concentration of indium (In) increases to approximately 2.5%, the yield strength of resulting alloy composite has decline slightly.Yet when the concentration of indium (In) surpassed 2.5%, yield strength increased along with the increase of indium (In) concentration.
[040] the Sn-4Ag-0.2Cu alloy composite of interpolation indium (In) is illustrated in the table of Fig. 8 with respect to the liquidus temperature and the yield strength of indium (In) concentration.Owing to the high-yield strength that produces because of high silver (Ag) concentration (＞3.5%) (＞6ksi), be used with respect to low copper (Cu) concentration (0.2%) of standard Sn-Ag-Cu (SAC) alloy (that is, 0.5%).When the concentration of indium (In) increase to about 2.5% the time, the yield strength of resulting alloy composite descend (about 20%).Yet when the concentration of indium (In) surpassed 2.5%, yield strength increased along with the increase of indium (In) concentration.
[041] the Sn-Ag-Cu-In alloy phase is shown in the curve map among Fig. 9 for the yield strength of indium (In) concentration.As shown in Figure 9, obviously, along with the increase of indium (In) concentration, the yield strength of adding the Sn-1Ag-0.5Cu alloy composite of indium (In) very rapidly increases, thereby these alloy composites are unacceptable to the low-K material that is used for embedding semiconductor devices.Yet, under situation with higher silver (Ag) concentration, along with indium (In) concentration increase to about 2.5%, add indium (In) the Sn-Ag-Cu alloy composite yield strength or keep constant or slight decline, yield strength increases along with the increase of indium (In) concentration afterwards.For example, when indium (In) when concentration increases to about 2.5-3%, the yield strength of adding Sn-2Ag-0.5Cu, the Sn-2.5Ag-0.5Cu of indium (In) and Sn-3Ag-0.5Cu alloy composite causes the slight decline of yield strength.Yet, when silver (Ag) concentration increase to 4% and copper (Cu) concentration be reduced to 0.2% (that is, in the time of Sn-4Ag-0.2Cu), the reduction of yield strength be very significant (about 20%), although this low yield strength compositing range is dwindled greatly.Similarly, can reasonably expect: (for example, Sn-6Ag-0.2Cu), will produce even the reduction of more significant yield strength, but the low yield strength compositing range will become even be narrower when above when silver (Ag) concentration becomes 4%.These results show, the yield strength of adding Sn-(0-2) the %Ag-0.5Cu alloy composite of indium (In) increases along with the increase of indium (In) concentration, but the yield strength of adding Sn-(2-3.5) the %Ag-0.5Cu alloy composite of indium (In) descends along with the increase of indium (In) concentration (that is, (2.001-4) %In).Back one alloy combination deposits yields low melting temperature compliant solders of the present disclosure, it is used for embedding the low-K material of semiconductor devices.In addition, when copper (Cu) concentration further was reduced to 0.2%, the yield strength of adding Sn-(3.5-6) the %Ag-0.2Cu alloy composite of indium (In) reduced the most remarkable.
[042] in order obtaining The above results better to be understood, above mentioned alloy to be carried out scanning electron microscopy (SEM) and energy-dispersive spectroscopy method (EDS).For example, Figure 10 shows the fast phase of SEM, and wherein EDS is used for being identified in the main reinforcing particle of the Sn-Ag-Cu alloy composite that adds indium (In).As shown in figure 10, the main reinforcing particle in the Sn-Ag-Cu alloy composite of this interpolation indium (In) utilizes EDS to be accredited as Sn
66.6Ag
29.4In
4Particularly, bright territory can be accredited as and consist of Sn
66.6Ag
29.4In
4Sn-Ag-In, and the lead matrix can be accredited as the solid solution of indium (In) in tin (Sn).The clear micro-structural of determining of this and standard Sn-Ag-Cu (SAC) alloy forms contrast, in described micro-structural, and main reinforcement Ag
3(less important reinforcing particle is the Cu that copper (Cu) produces to the Sn particle
6Sn
5) be evenly distributed in tin (Sn) matrix.That is to say, because indium (In) adds stoichiometric Ag to
3Among the Sn, the Sn that indium (In) mixes
66.6Ag
29.4In
4Particle is unordered and not according to stoichiometry.More specifically, these are not according to stoichiometric Sn
66.6Ag
29.4In
4Particle is unlike Ag
3The Sn particle strengthens solder flux like that, and reason is the loss of cohesive force (coherency) in the more soft matter of non-stoichiometric compound and tin (Sn) matrix.
[043] in addition, find that the dominant mechanism of Sn-Ag-Cu-In solder alloy is normally strengthened in the solution hardening of indium.Yet in Sn-Ag-Cu-In composition of the present disclosure, indium (In) is removed from solution, thereby reduces the solution hardening effect, and replaces formation not according to stoichiometric Sn
66.6Ag
29.4In
4Particle, it is unlike replaced stoichiometry Ag
3The such reinforced alloys of Sn particle.As the result of above-mentioned effect, the yield strength of the Sn-Ag-Cu alloy composite of present disclosed interpolation indium (In) increases (that is, (2.001-4) between the %In) along with indium (In) concentration and reduces.
[044] Figure 10 also shows, along with silver (Ag) concentration is reduced to below 2%, finds Sn
66.6Ag
29.4In
4Particle is sparsely distributed, and reason is that less indium (In) is removed from solution, and softening effect is insignificant.By contrast, when silver (Ag) concentration surpasses 6%, can be used to form Sn
66.6Ag
29.4In
4(In) is depleted for the indium of particle.Yet, Ag
3The Sn number of particles continues to increase, and reason is that the amount of available silver (Ag) increases, make softening effect significantly and the low-intensity compositing range dwindle.According to the disclosure, by reducing less important reinforcing particle Cu by reducing copper (Cu) concentration
6Sn
5Quantity, realized the further decline of yield strength, thereby produced even more favourable alloy composite.
[045] disclosure is not subject in the scope of the specific embodiment described herein.In fact, except described herein these, other various embodiments of the present disclosure and will be tangible for those of ordinary skills to description and accompanying drawing that other changes by the front of the present disclosure.Therefore, other embodiment of this class and variation are intended to fall within the scope of the present disclosure.In addition, although the disclosure is described in herein under the situation of particular implementation based on specific purpose in specific environment, but one of skill in the art will recognize that, its serviceability will be not limited only to this, and the disclosure can advantageously be implemented in any multiple environment for any multiple purpose.Therefore, described claims should be taken into account that the Breadth Maximum and the spirit of present disclosure are explained as described herein.
Claims (14)
1. low melting temperature compliant solders alloy, it comprises: about by weight 91.5% to about 97.998% tin, about 0.001% to about 3.5% silver, about 0.0% to about 1.0% copper and about by weight 2.001% to about 4.0% indium by weight by weight.
2. the described low melting temperature compliant solders alloy of claim 1, wherein said alloy comprises about at the most 3.0% indium by weight.
3. the described low melting temperature compliant solders alloy of claim 1, wherein said alloy comprises about at the most 2.5% indium by weight.
4. the described low melting temperature compliant solders alloy of claim 1, wherein said alloy further comprises the impurity of trace.
5. the described low melting temperature compliant solders alloy of claim 1, wherein said alloy does not comprise the impurity of trace.
6. the described low melting temperature compliant solders alloy of claim 1, further comprise about by weight 0.01% to about 3.0% at least aly be selected from following adulterant: zinc (Zn), nickel (Ni), iron (Fe), cobalt (Co), germanium (Ge), phosphorus (P), aluminium (Al), antimony (Sb), cadmium (Cd), tellurium (Te), bismuth (Bi), platinum (Pt), rare earth element and their combination, to improve non-oxidizability and to increase physical property and thermal fatigue resistance.
7. the described low melting temperature compliant solders alloy of claim 6, wherein said rare earth element is selected from cerium (Ce), lanthanum (La), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), actinium (Ac), thorium (Th), protactinium (Pa) and their combination.
8. low melting temperature compliant solders alloy, it comprises: about by weight 89.7% to about 94.499% tin, about 3.5% to about 6.0% silver, about 0.0% to about 0.3% copper and about by weight 2.001% to about 4.0% indium by weight by weight.
9. the described low melting temperature compliant solders alloy of claim 8, wherein said alloy comprises about at the most 3.0% indium by weight.
10. the described low melting temperature compliant solders alloy of claim 8, wherein said alloy comprises about at the most 2.5% indium by weight.
11. the described low melting temperature compliant solders alloy of claim 8, wherein said alloy further comprises the impurity of trace.
12. the described low melting temperature compliant solders alloy of claim 8, wherein said alloy does not comprise the impurity of trace.
13. the described low melting temperature compliant solders alloy of claim 8, further comprise about by weight 0.01% to about 3.0% at least aly be selected from following adulterant: zinc (Zn), nickel (Ni), iron (Fe), cobalt (Co), germanium (Ge), phosphorus (P), aluminium (Al), antimony (Sb), cadmium (Cd), tellurium (Te), bismuth (Bi), platinum (Pt), rare earth element and their combination, to improve non-oxidizability and to increase physical property and thermal fatigue resistance.
14. the described low melting temperature compliant solders alloy of claim 13, wherein said rare earth element are selected from cerium (Ce), lanthanum (La), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), actinium (Ac), thorium (Th), protactinium (Pa) and their combination.
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| US72003905P | 2005-09-26 | 2005-09-26 | |
| US60/720,039 | 2005-09-26 | ||
| US11/422,782 | 2006-06-07 |
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| CN103240541A (en) * | 2013-05-13 | 2013-08-14 | 金封焊宝有限责任公司 | Tin zinc multi-element alloy solder for soldering copper and aluminum and preparation method thereof |
| CN103921010A (en) * | 2012-11-21 | 2014-07-16 | 拉曼大学 | Welding alloy |
| CN104870673A (en) * | 2012-12-18 | 2015-08-26 | 千住金属工业株式会社 | Lead-free solder alloy |
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| CN102321831B (en) * | 2011-10-24 | 2012-11-28 | 南京信息工程大学 | High-spreadability tin-antimony-rare earth lead-free solder alloy and preparation method thereof |
| CN102321831A (en) * | 2011-10-24 | 2012-01-18 | 南京信息工程大学 | High-spreadability tin-antimony-rare earth lead-free solder alloy and preparation method thereof |
| CN103921010B (en) * | 2012-11-21 | 2019-01-22 | 拉曼大学 | Welding alloy |
| CN103921010A (en) * | 2012-11-21 | 2014-07-16 | 拉曼大学 | Welding alloy |
| US10343238B2 (en) | 2012-12-18 | 2019-07-09 | Senju Metal Industry Co., Ltd. | Lead-free solder alloy |
| CN104870673A (en) * | 2012-12-18 | 2015-08-26 | 千住金属工业株式会社 | Lead-free solder alloy |
| TWI502073B (en) * | 2012-12-18 | 2015-10-01 | Senju Metal Industry Co | Lead - free solder alloy |
| CN104870673B (en) * | 2012-12-18 | 2016-07-06 | 千住金属工业株式会社 | Lead-free solder alloy |
| CN103240541B (en) * | 2013-05-13 | 2014-08-13 | 金封焊宝有限责任公司 | Tin zinc multi-element alloy solder for soldering copper and aluminum and preparation method thereof |
| CN103240541A (en) * | 2013-05-13 | 2013-08-14 | 金封焊宝有限责任公司 | Tin zinc multi-element alloy solder for soldering copper and aluminum and preparation method thereof |
| CN105463247A (en) * | 2015-12-03 | 2016-04-06 | 江阴恩特莱特镀膜科技有限公司 | Alloy for binding target and manufacturing method and application of alloy |
| CN106311994A (en) * | 2016-08-29 | 2017-01-11 | 芜湖楚江合金铜材有限公司 | High-performance tin-plated copper wire |
| CN109648222A (en) * | 2019-01-21 | 2019-04-19 | 上海莜玮汽车零部件有限公司 | A kind of leadless welding alloy and its application |
| CN111590233A (en) * | 2020-06-11 | 2020-08-28 | 中山翰华锡业有限公司 | High-weldability environment-friendly superfine solder wire for intelligent manipulator welding and preparation method thereof |
| CN111590233B (en) * | 2020-06-11 | 2021-12-31 | 中山翰华锡业有限公司 | High-weldability environment-friendly superfine solder wire for intelligent manipulator welding and preparation method thereof |
| CN112404791A (en) * | 2020-11-18 | 2021-02-26 | 昆明理工大学 | Tin-zinc series lead-free solder alloy and preparation method thereof |
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Application publication date: 20090121 |