CN101349850A - Liquid crystal display panel, photo-electric device and manufacture method thereof - Google Patents

Liquid crystal display panel, photo-electric device and manufacture method thereof Download PDF

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Publication number
CN101349850A
CN101349850A CNA2008102151848A CN200810215184A CN101349850A CN 101349850 A CN101349850 A CN 101349850A CN A2008102151848 A CNA2008102151848 A CN A2008102151848A CN 200810215184 A CN200810215184 A CN 200810215184A CN 101349850 A CN101349850 A CN 101349850A
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China
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substrate
display panels
light
electrically connected
emitting component
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CNA2008102151848A
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Chinese (zh)
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CN100585479C (en
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陈飞顺
阙嘉慧
张俪琼
张禄坤
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AU Optronics Corp
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AU Optronics Corp
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Abstract

The invention provides a liquid crystal display panel, a photoelectric device and a production method. The liquid crystal display panel comprises a first baseboard, a scan line, a data line, a first switch component, a second switch component, wires, a lighting component, a pixel electrode, a first storage capacitor, a second baseboard and a liquid crystal layer, wherein the scan line, the data line, the first switch component, the second switch component, the wires, the lighting component, the pixel electrode and the first storage capacitor are arranged on the first baseboard, the second baseboard is opposite to the first baseboard, the liquid crystal layer is between the first and the second baseboards, and the lighting component is arranged on the first baseboard as a backlight source of the liquid crystal display panel, therefore the liquid display panel can work without a backlight module to attain a thin and light structure.

Description

Display panels, electrooptical device and manufacture method thereof
Technical field
The invention relates to a kind of display panel, electrooptical device and manufacture method thereof, and particularly relevant for a kind of light, thin, short, little display panels, electrooptical device and manufacture method thereof.
Background technology
In general, semi-penetrated semi-reflected liquid crystal display (Transflective LCD) is made of semi-penetrating and semi-reflective liquid crystal display panel and backlight module.Area source and external light source that semi-penetrated semi-reflected liquid crystal display can utilize backlight module to provide simultaneously show, therefore can present good display effect among the environment of Different Light intensity.
In semi-penetrating and semi-reflective liquid crystal display panel, the dot structure of active component array base board can be divided into penetrating region and echo area, and it provides penetration and reflective two kinds of different display modes respectively.Specifically, the light source that the part in the echo area normally is used as showing with metal material reflect ambient light source then sees through area source that backlight module provides as the light source that shows in the part of penetrating region.Yet, the light of the area source that backlight module provides only can be used in the part of penetrating region, light at the area source of echo area will be covered by metal material, and then only could allow the area source of backlight module effectively utilize in the part of penetrating region, thereby reduce the light utilization efficiency of backlight module.
As mentioned above, therefore known semi-penetrated semi-reflected liquid crystal display, will reduce the light utilization efficiency of backlight module owing to use backlight module to provide area source to carry out the demonstration of image in the part of its echo area.In other words, select for use which kind of preferable backlight replacing known backlight module, and then improve that its light utilization efficiency is real to be a present semi-penetrated semi-reflected liquid crystal display big problem extremely to be overcome.
Summary of the invention
In view of this, the invention provides a kind of display panels, it adopts organic electroluminescent device as backlight, makes can have more compact external form when it is applied to display, and can have cheaper cost when making display.
The present invention provides a kind of manufacture method of display panels in addition, and it can produce above-mentioned display panels.
The present invention more provides a kind of electrooptical device, and it has above-mentioned display panels, makes it have more compact external form and cheaper cost.
The present invention provides a kind of manufacture method of above-mentioned electrooptical device again.
The present invention proposes a kind of display panels, and this display panels comprises one first substrate, at least one sweep trace, at least one data line, at least one first on-off element, at least one second switch element, at least one lead, at least one light-emitting component, at least one pixel electrode, at least one first reservior capacitor, one second substrate and a liquid crystal layer.Sweep trace is disposed on first substrate.Data line is disposed on first substrate, and staggered with sweep trace.First on-off element is disposed on first substrate, and the grid of first on-off element is electrically connected with sweep trace and the source electrode of first on-off element is electrically connected with data line.An echo area is used as in the zone that first on-off element is positioned on first substrate.The second switch arrangements of components and is electrically insulated with first on-off element on first substrate.Conductor configurations and is electrically connected with first end of second switch element on first substrate.Light-emitting component is disposed on first substrate, and is electrically connected with second end of second switch element.A penetrating region is used as in the zone that light-emitting component is positioned on first substrate.Pixel electrode is disposed on first substrate, and is electrically connected with the drain electrode of first on-off element.First reservior capacitor is disposed on first substrate, and is electrically connected via the drain electrode of pixel electrode with first on-off element.Second substrate is positioned at the subtend of first substrate.Liquid crystal layer is between first substrate and second substrate.
The present invention proposes a kind of manufacture method of display panels in addition, and it comprises: one first substrate is provided.Dispose at least one sweep trace on first substrate.Then, dispose at least one data line on first substrate, wherein data line and sweep trace are staggered.Dispose at least one first on-off element on first substrate, wherein the grid of first on-off element is electrically connected with sweep trace and the source electrode of first on-off element is electrically connected with data line, and an echo area is used as in the zone that this first on-off element is positioned on first substrate.Dispose at least one second switch element on first substrate, wherein the second switch element and first on-off element are electrically insulated.Dispose at least one lead on first substrate, wherein lead is electrically connected with first end of second switch element.Dispose at least one light-emitting component on first substrate, wherein light-emitting component is electrically connected with second end of second switch element, and a penetrating region is used as in the zone that this light-emitting component is positioned on first substrate.Dispose at least one pixel electrode on first substrate, wherein pixel electrode is electrically connected with the drain electrode of first on-off element.Dispose at least one first reservior capacitor on first substrate, wherein first reservior capacitor is electrically connected via the drain electrode of pixel electrode with first on-off element.Provide one second substrate in the subtend of first substrate.Provide a liquid crystal layer between first substrate and second substrate to form a kind of display panels.
The present invention more proposes a kind of electrooptical device, and it comprises above-mentioned display panels.
The present invention reintroduces a kind of manufacture method of electrooptical device, and it comprises the manufacture method of above-mentioned mentioned display panels.
In sum, the backlight when display panels of the present invention configuration light-emitting component shows as display panels on first substrate, wherein the light-emitting component position is as a penetrating region.Therefore, display panels need not use traditional backlight module as backlight when showing, can save the cost of manufacture that it is applied to display, but and display have compact external form.In addition, the present invention also provides the production method of above-mentioned display panels.Adopt the electrooptical device of above-mentioned display panels similarly can save its cost of manufacture, and have comparatively compact advantage.
Description of drawings
Figure 1A illustrates and is the schematic equivalent circuit on the display panels of one embodiment of the invention and first substrate thereof.
The diagrammatic cross-section of the display panels that Figure 1B is illustrated for the regional area 101 of Figure 1A.
Fig. 2 A to Fig. 2 H illustrates the making schematic flow sheet into the display panels of first embodiment of the invention.
The diagrammatic cross-section of the display panels of another example that Fig. 3 is illustrated for the regional area 101 of Fig. 1.
Fig. 4 A～Fig. 4 E illustrates the making schematic flow sheet into the display panels of second embodiment of the invention.
Fig. 5 illustrates and is the schematic equivalent circuit on the display panels of another example of the present invention and first substrate thereof.
Fig. 6 illustrates the more display panels of an example and the schematic equivalent circuit on first substrate thereof into the present invention.
Fig. 7 illustrate is the synoptic diagram of the electrooptical device of one embodiment of the invention.
Drawing reference numeral
100,100a, 300,300a, 500,600,720: display panels
110: the first substrates
110a, 120a: outside surface
111: sweep trace
112,610: data line
113: the first on-off elements
113a: grid
113b: source electrode
113c: drain electrode
114: the second switch element
114a: first end
114b: second end
115: lead
116,270: light-emitting component
116a, 270a: first electrode
116b, 270b: functional layer
116c, 270c: second electrode
117,280: pixel electrode
117a, 280a: reflecting electrode
117b, 280b: transparency electrode
118: the first reservior capacitors
120: the second substrates
122: the common electrode layer
130: liquid crystal layer
140,140a, 260,260a: flatness layer
142: raised design
150,274: interior light polarizing film
160: polaroid
170,272: protective seam
180: the second reservior capacitors
210: the first patterned conductive layers
220: the first insulation courses
230: the first patterned semiconductor layer
240: the second patterned conductive layers
250: the second insulation courses
620: pixel region
700: electrooptical device
720: electronic component
D1: first optical path length
D2: second optical path length
P1: echo area
P2: penetrating region
Embodiment
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below.
First embodiment
Figure 1A illustrates and is the schematic equivalent circuit on the display panels of one embodiment of the invention and first substrate thereof, and the diagrammatic cross-section of the display panels that Figure 1B is illustrated for the regional area 101 of Figure 1A.Please also refer to Figure 1A and Figure 1B, the display panels 100 of present embodiment comprises one first substrate 110, at least one sweep trace 111, at least one data line 112, at least one first on-off element 113, at least one second switch element 114, at least one lead 115, at least one light-emitting component 116, at least one pixel electrode 117, at least one first reservior capacitor 118, one second substrate 120 and a liquid crystal layer 130, wherein sweep trace 111, data line 112, first on-off element 113, second switch element 114, lead 115, light-emitting component 116, the pixel electrode 117 and first reservior capacitor 118 are disposed at respectively on first substrate 110.Second substrate 120 is positioned at the subtend of first substrate 110, and liquid crystal layer 130 illustrates as Figure 1A between first substrate 110 and second substrate 120.
Annexation between sweep trace 111, data line 112, first on-off element 113, second switch element 114, lead 115, light-emitting component 116, pixel electrode 117 and first reservior capacitor, 118 each member that are disposed on first substrate 110 below will be described respectively, and adopt the LCD 100 of the first above-mentioned substrate 110 to have which kind of advantage.
In the present embodiment, the material of first substrate 110 can comprise inorganic transparent material (as: glass, quartzy, or other suitable material, or above-mentioned combination), organic transparent material (as: polyalkenes Ju Hai class, polyalcohols, polyesters, rubber, thermoplastic polymer, thermosetting polymer, the poly aromatic hydro carbons, poly-methyl propionyl acid methyl esters class, polycarbonate-based, or other suitable material, or above-mentioned derivant, or above-mentioned combination), inorganic transparent materials (as: silicon chip, pottery, or other suitable material, or above-mentioned combination), or above-mentioned combination.For instance, first substrate 110 is the usefulness that is used in the image element array substrates as substrate, and serves as to implement example with the glass of inorganic transparent material, but not as limit.
In addition, the data line 112 that is disposed on first substrate 110 is interlaced with sweep trace 111, and the grid 113a of first on-off element 113 is electrically connected with sweep trace 111, and the source electrode 113b of first on-off element 113 is electrically connected with data line 112, illustrates as Figure 1A.In the present embodiment, first on-off element 113 for example is to adopt thin film transistor (TFT) (Thin-film transistor, TFT) element.In general, the kenel that can be divided into top grid or bottom-gate according to the design of thin film transistor (TFT), or, can be divided into minus (N-type) thin film transistor (TFT) or eurymeric (P-type) thin film transistor (TFT) or kenel above-mentioned and combination again according to transistorized ion doping mode.First on-off element 113 is to adopt the thin film transistor (TFT) of which kind of form to look closely user's design and decide, and the present invention is not limited to this.For example, first on-off element 113 of present embodiment is very to implement example with bottom gate, illustrates as Figure 1B, but is not limited thereto.Therefore, why type the present invention is not particularly limited first on-off element 113 transistor.
In addition, above-mentioned sweep trace 111 can be the single or multiple lift structure with data line 112, and the material of the two for example is to use the material by metals such as gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminium, zinc, above-mentioned alloy, above-mentioned metal oxide, above-mentioned metal nitride or above-mentioned combination.Present embodiment is laminated with molybdenum and aluminium to be example, but is not limited thereto.
In the present embodiment, the zone that first on-off element 113 is positioned on first substrate 110 can be used as an echo area P1, illustrates as Figure 1B.And pixel electrode 117 is disposed on first substrate 110, and is electrically connected with the drain electrode 113c of first on-off element 113, illustrates as Figure 1B.In addition, first reservior capacitor 118 is disposed on first substrate 110, and is electrically connected via the drain electrode 113c of pixel electrode 117 with first on-off element 113, illustrates as Figure 1A and Figure 1B.What deserves to be explained is, first reservior capacitor 118 is the capacitors that formed by upper/lower electrode, wherein top electrode comprises that at least the electrode that pixel electrode 117 forms or other is suitable forms, and bottom electrode for example is that common electrode (not illustrating), sweep trace 111, said two devices are together as bottom electrode or other suitable electrode.
In the present embodiment, pixel electrode 117 can be the single or multiple lift structure.For instance, when pixel electrode 117 is single rete in the structure of echo area P1, it for example is a reflecting electrode 117a, and its material can be to use the material of metals such as gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminium, zinc, above-mentioned alloy, above-mentioned metal oxide, above-mentioned metal nitride or above-mentioned combination.Above-mentioned only is one for example, non-in order to limit the present invention.
In addition, when pixel electrode 117 is multiple film layer at the film layer structure of echo area P1, it is made of an at least one reflecting electrode 117a and a transparency electrode 117b, preferably, transparency electrode 117b covers on the reflecting electrode 117a, illustrates as Figure 1B, but is not limited thereto, in other embodiment, on the reflecting electrode 117a covering transparent electrode 117b.Reflecting electrode 117a for example is to use the above-mentioned material of mentioning, does not repeat them here.And the material of transparency electrode 117b for example is indium tin oxide, indium-zinc oxide, indium tin zinc oxide, hafnia, zinc paste, aluminium oxide, aluminium tin-oxide, aluminium zinc oxide, cadmium tin-oxide, cadmium zinc oxide or other suitable material or above-mentioned combination.Present embodiment is an example with the indium tin oxide, but is not limited thereto.In addition, pixel electrode 117 also can be the single or multiple lift structure at the transparency electrode 117b of penetrating region P2, and its material as mentioned above, do not repeat them here.Moreover when the pixel electrode 117 of present embodiment was multiple film layer at the film layer structure of echo area P1, covering reflecting electrode 117a with transparency electrode 117b was example, but is not limited thereto, and also can be that reflecting electrode 117a is covered on the transparency electrode 117b.
As mentioned above, the pixel electrode 117 of present embodiment is to be to implement example with the multiple film layer at the film layer structure of echo area P1, shown in Figure 1B.On technology, the transparency electrode 117b that is formed at echo area P1 optionally is not covered on the light-emitting component 116 comprehensively.For instance, Figure 1B illustrates that transparency electrode 117b is covered in all or partly on the light-emitting component 116, at this moment, transparency electrode 117b can be electrically insulated with any one electrode in the light-emitting component 116 (116a as described below and 116c).Yet in the embodiment that other do not illustrate, transparency electrode 117b can be uncovered on light-emitting component 116.In addition, on making, the reflecting electrode 117a that is formed on the P1 of echo area can not be covered on the light-emitting component 116 all sidedly, be to cover the light that light-emitting component 116 is excited if be covered on the light-emitting component 116 because of reflecting electrode 117a, and then influence the display quality of display panels 100 when showing, even can't show.
In the present embodiment, the second switch element 114 and first on-off element 113 are electrically insulated, and lead 115 is disposed on first substrate 110, and are electrically connected with the first end 114a of second switch element 114, illustrate as Figure 1A.Second switch element 114 for example is to adopt thin film transistor (TFT) (Thin-film transistor, TFT) element.In general, the kenel that can be divided into top grid or bottom-gate according to the design of thin film transistor (TFT), or, can be divided into minus (N-type) thin film transistor (TFT) again according to transistorized ion doping mode, or eurymeric (P-type) thin film transistor (TFT) or kenel above-mentioned and combination.Therefore, second switch element 114 is to adopt the thin film transistor (TFT) of which kind of kenel to look closely user's design and decide, and the present invention is not limited to this.In the present embodiment, second switch element 114 is very to implement example with bottom gate, illustrate as Figure 1B, but it also can be the thin film transistor (TFT) that is designed to the top grid.
In the present embodiment, lead 115 for example is to be electrically connected to a voltage source (not illustrating).In another embodiment, lead 115 can be to be electrically connected to a signal source (not illustrating).Specifically, lead 115 is suitable for transfer overvoltage source or voltage signal that signal source produced or current signal to second switch element 114, use to open or close second switch element 114, and then driven light-emitting element 116 makes it luminous.In the present embodiment, lead 115 optionally is connected directly to voltage source, and then makes light-emitting component 116 see through second switch element 114 to reach the purpose of deciding electric current, is comprehensive luminous and make its luminous mechanism.
In addition, lead 115 can be the single or multiple lift structure, and its material for example is to use the material of metals such as gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminium, zinc, above-mentioned alloy, above-mentioned metal oxide, above-mentioned metal nitride or above-mentioned combination.Present embodiment is laminated with molybdenum and aluminium to be example, but is not limited thereto.
In the present embodiment, light-emitting component 116 is disposed on first substrate 110, and is electrically connected with second end (or the steelyard slepsydra utmost point) 114b of second switch element 114.In addition, first end of second switch element 114 (or claiming source electrode) 114a is connected to lead 115.In other embodiment, preferably, the 3rd end of second switch element 114 (or claiming not indicate grid) is electrically connected on lead 115 or is electrically connected on lead 115 simultaneously and the first end 114a.In addition, a penetrating region P2 is used as in the zone that is positioned on first substrate 110 of light-emitting component 116.For instance, light-emitting component 116 for example is to adopt Organic Light Emitting Diode (organic light emittingdiode, OLED) as the backlight of display panels 100, wherein light-emitting component 116 can be divided into the first electrode 116a, functional layer 116b and the second electrode 116c.In one embodiment, the film layer structure of functional layer 116b difference to some extent according to the kind of the second switch element 114 that it connected.For example: when second switch element 114 uses minus thin film transistor (TFT) (N-type TFT) when being electrically connected with light-emitting component 116, for example, the first electrode 116a can be described as anode and is connected to source/drain electrode (114a/114b) of N-TFT, and the second electrode 116c can be described as negative electrode, preferably, the second electrode 116c is connected to another voltage source (not indicating), for example: ground voltage.Wherein, by the direction of the first electrode 116a toward the second electrode 116c, it for example is hole transmission layer/hole-conductive layer, luminescent layer, electron transfer layer/electron injecting layer in regular turn that the rete of functional layer 116b is arranged; If second switch element 114 uses eurymeric thin film transistor (TFT) (P-type TFTs) when being electrically connected with light-emitting component 116, for example, the first electrode 116a can be described as negative electrode and is connected to source/drain electrode (114a/114b) of N-TFT, and the second electrode 116c can be described as anode, preferably, the second electrode 116c is connected to lead 150 or another voltage source (not indicating).Wherein, by the direction of the first electrode 116a toward the second electrode 116c, the rete arrangement mode of functional layer 116b is just opposite with the minus thin film transistor (TFT).In addition, upper and lower when the first electrode 116a and second electrode 116 to timing, its electrode 116a, 116b polarity also can be exchanged.
In addition, be subjected to external environment to influence its luminescence efficiency for fear of light-emitting component 116, display panels 100 more can optionally have a protective seam 170.Present embodiment, being disposed on the light-emitting component 270 with protective seam 170 is example, illustrates as Figure 1B.For instance, protective seam 170 can be the single or multiple lift structure, and its rete there is no particular restriction in proper order.But preferably, it can be inorganic protective layer (can select SiN, SiOx, SiON etc. for use)/moisture absorption layer (can select the hygroscopic materials of any tool such as MgO for use)/inorganic protective layer (can select SiN, SiOx, SiON etc. for use) in regular turn.Above-mentioned only for illustrating, but be not limited thereto.
In the present embodiment, second switch element 114 can be made in the zone of the echo area P1 on first substrate 110, illustrates as Figure 1B.Yet, in the embodiment that other do not illustrate, according to user's demand, the second switch element 114 and first reservior capacitor 118 wherein one of at least the zone that is made on first substrate 110 of person can be the boundary in penetrating region P2, echo area P1 or said two devices zone.
As mentioned above, be unlocked or close owing to second switch element 114 is suitable for the voltage source that is electrically connected via lead 115 or signal source, and then the light-emitting component 116 that second switch element 114 is electrically connected is driven and luminous, and light-emitting component 116 positions are as photic zone P2.Therefore, when display panels 100 is driven and during display image, pixel electrode 117 on the P1 of echo area removes and can reflect extraneous light source with the backlight as reflected field P1, and the torsional direction of the liquid crystal molecule of may command liquid crystal layer 130, to reach the purpose of demonstration.In addition, part at photic zone P2, because light-emitting component 116 is disposed at this regional P2, and via the signal of lead 115 transfer overvoltage sources or signal source to open or to close the second switch element luminous so that light-emitting component 116 is driven, therefore, light-emitting component 116 can be used as the backlight of photic zone P2 of display panels 100 to replace the use of traditional backlight module.In other words, on first substrate 110, traditional backlight module of need not arranging in pairs or groups when it is driven just can reach the purpose of demonstration to display panels 100 by configuration light-emitting component 116, and then can reduce whole thickness and weight, to reach compact external form.
At present embodiment, display panels 100 optionally more comprises a flatness layer 140.Present embodiment covers on first substrate 110 with flatness layer 140 and exposes light-emitting component 116, and pixel electrode 117 covering flatness layers 140 are example, illustrate as Figure 1B.Specifically, the surface of flatness layer 140 optionally forms a plurality of raised designs 142, and it is example that present embodiment forms a plurality of raised designs 142 with the surface of flatness layer 140, illustrates as Figure 1B.Therefore, when pixel electrode 117 was covered in flatness layer 140, the surface of pixel electrode was suitable for being conformally formed a plurality of raised designs 142, thereby made the surface of pixel electrode 117 have a plurality of raised designs 142, illustrated as Figure 1B.In another embodiment, pixel electrode 117 can (for example be the chemical wet etching technology by technology also, or laser-engraving technique, screen printing technology, ink-jet technology or other suitable modes) make its surface directly form a plurality of raised designs 142, and under the pixel electrode 117, also can have maybe and can not have flatness layer 140.Further, because the surface of pixel electrode 117 has a plurality of raised designs 142, therefore, when display panels 100 is driven and during display frame, the raised design 142 of echo area P1 is suitable for reflecting external light equably, and then makes the display quality of echo area P1 have preferable luminance uniformity.In other embodiments, can go up at least one insulating film layer (not illustrating) or at least one conductive film layer (not illustrating) of making thin film transistor (TFT) prior to echo area P1 and form a plurality of raised designs 142, and flatness layer 140 is covered in above-mentioned raised design 142, then can conformally go up in flatness layer 140 surfaces and form described raised design 142.
In addition, the Thickness Design of flatness layer 140 preferably, satisfies the relational expression of this 2 * D1=1 * D2, and wherein D1 is first optical path length of second substrate 110 to echo area P1, and D2 is second optical path length of second substrate 110 to penetrating region P2, illustrates as Figure 1B.Specifically, because P1 main light source in echo area is from the light of external environment, the light source of penetrating region then comes self-emission device to be driven the light that is excited, therefore, for making the light that penetrates out display panels have identical optical path difference, so the design of flatness layer preferable for to satisfy above-mentioned relational expression, thus, when display panels is driven and shows, can have better display quality.In addition, except that raised design, the uneven thickness one of flatness layer can be described as polycrystalline cave structure.
In addition, the material of flatness layer 140 can be to use inorganic (as: monox, silicon nitride, silicon oxynitride, silit, hafnia, aluminium oxide or other material or above-mentioned combination), organic material (as: photoresist, benzocyclobutene, cyclenes class, polyimide, polyamide-based, polyesters, polyalcohols, polyethylene oxide class, polyphenyl class, resene, polyethers, polyketone class or other material or above-mentioned combination) or above-mentioned combination.
In the present embodiment, for the light that light-emitting component 116 is sent, preferably, have polarisation character, therefore, display panels 100 optionally more comprises light polarizing film 150 in, but is not limited thereto.Interior light polarizing film 150 is covered on the light-emitting component 116.Yet if dispose protective seam 170 on light-emitting component 116 time, interior light polarizing film 150 is covered on the light-emitting component 116, illustrates as Figure 1B.Specifically, when light-emitting component 116 is driven and inspires light, the polarization characteristic of the light that it excites is non-polarized (un-polarized) light, interior light polarizing film 150 is suitable for light polarization that light-emitting component 116 is excited, make it be suitable for deflection along with the arrangement of liquid crystal molecule, and the outside polaroid of collocation controls the brightness of the light of outgoing, to reach the purpose of demonstration.
More advance on the outside surface 120a of one, the second substrate 120 to dispose a polaroid 160, and can be unworthy of offset mating plate 160 on the outside surface 110a of first substrate 110.In general, display panels disposes the outside surface of polaroid in first substrate and second substrate respectively, make by the light in the display panels polarized earlier, and make liquid crystal molecule have difference to reverse degree by applying different voltages, and then the brightness of the light of may command outgoing display panels, and reach the purpose of display image.Yet, because light-emitting component 116 is used as backlight, and light polarizing film 150 in disposing on it, it can be used to replace the outside surface of former first substrate to use the function of polaroid, and does not need the employed polaroid of outside surface of former first substrate.Thus, display panels 100 is except the use of the backlight module of need not arranging in pairs or groups, also can on light-emitting component, reduce the use of blooming piece by light polarizing film in the configuration, and then it is had outside the more cheap cost of manufacture, its weight and thickness can be reduced to reach compact purpose of design widely.
In the present embodiment, optionally configuration is altogether with electrode layer 122 on second substrate 120, and then the display mode of this display panels can be described as vertical alignment mode.Specifically, formed electric field can be controlled the arrangement of liquid crystal molecule of liquid crystal layer 130 to show required picture brightness between pixel electrode and the common electrode layer 122, wherein control the basic display principles that the Liquid Crystal Molecules Alignment mode is a display panels, the technician in this field of tool just repeats no more at this when being familiar with this technology.In other embodiment, do not dispose common electrode layer 122 on second substrate 120, thus, the display mode of this display panels can be described as the horizontal direction matching pattern.
In addition, on second substrate 120 and first substrate 110 on wherein one more can comprise the configuration one colored filter (not illustrating).For instance, when colored filter is disposed at the first above-mentioned substrate 110, be disposed at different retes on first substrate 110 according to colored filter, it can be colored filter kenel of (color filter on array) on active layers, that is to say that colored filter is disposed on the on-off element, or active layers (array on color filter) on colored filter, that is to say that colored filter is disposed at the kenel under the on-off element, or other suitable configuration modes.| among the embodiment, colored filter also can only be formed on second substrate 120 and be colored optical filtering substrates.Certainly, colored filter is formed to be looked closely user's demand on first substrate 110 or second substrate 120 and decides, and above-mentioned only is one for example, non-ly is limited to this.
In sum, display panels 100 is disposed on first substrate 100 by light-emitting component 116, can make need not the arrange in pairs or groups use of backlight module of display panels 100 just can reach the purpose of display image.In addition, light-emitting component preferably disposes interior light polarizing film on 116 surfaces, also can save the use of known blooming piece.In addition, the surface of the pixel electrode of echo area P2 preferably has a plurality of raised designs, thus, can promote the luminance uniformity of display panels, but non-ly is limited to this.
In addition, Fig. 2 A to Fig. 2 H illustrates the making schematic flow sheet into the display panels of first embodiment of the invention, and is the example explanation with the thin film transistor (TFT) of bottom gate type, but not as limit.Please also refer to Figure 1A and Fig. 2 A, one first substrate 110 at first is provided, wherein the material of first substrate 110 such as above-mentioned material do not repeat them here.Then, form at least one scan line 111 and at least one data line 112 respectively on first substrate 110, illustrate as Figure 1A.
Specifically, on first substrate 110, form one first patterned conductive layer 210, illustrate as Fig. 2 A, wherein first patterned conductive layer 210 for example is above-mentioned common electrode (not illustrating), above-mentioned sweep trace 111, the first electrode 116a of the grid 113a of the first above-mentioned on-off element 113 or above-mentioned light-emitting component 116.The method that forms first patterned conductive layer 210 for example is to utilize chemical wet etching technology, screen printing process, ink-jetting process or other suitable technology.For example, can on first substrate 110, form a metal material layer (not illustrating) earlier comprehensively, then, use chemical wet etching technology (Photolithography and Etching Process, PEP) metal material layer is patterned as first patterned conductive layer 210, illustrate as Fig. 2 A.
Then, please refer to Fig. 2 B, form one first insulation course 220 on first patterned conductive layer 210, wherein first insulation course, 220 cover parts, first patterned conductive layer 210 illustrates as Fig. 2 B.In the present embodiment, first insulation course 220 for example is the grid 113a that covers above-mentioned common electrode (not illustrating), above-mentioned data line 111 and above-mentioned first on-off element 113, and does not cover the first electrode 116a of above-mentioned light-emitting component 116.Then, form one first patterned semiconductor layer 230 on first insulation course 220, wherein the position of first patterned semiconductor layer, the 230 relative first patterning semiconductive layers 210 illustrates as Fig. 2 B.
Specifically, the method that forms first insulation course 220 for example is to use chemical gaseous phase Shen to amass method, but is not limited thereto, and also uses the mode of other technology that is fit to, as: screen painting, coating, ink-jet, energy source processing etc.Insulation course 220 can be the single or multiple lift structure, and its material for example is inorganic (as: monox, silicon nitride, silicon oxynitride, silit, hafnia, aluminium oxide or other suitable material or above-mentioned combination), organic material (as: photoresist, benzocyclobutene, cyclenes class, polyimide, polyamide-based, polyesters, polyalcohols, polyethylene oxide class, polyphenyl class, resene, polyethers, polyketone class or other suitable material or above-mentioned combination) or above-mentioned combination.Present embodiment is an example with silicon dioxide or silicon nitride, but is not limited thereto.
In addition, the method that forms first patterned semiconductor layer 230 for example is to utilize chemical wet etching technology.For example, can on first substrate 110, form layer of semiconductor material layer (not illustrating) earlier comprehensively, then, use chemical wet etching technology semiconductor material layer is patterned as first patterned semiconductor layer 230, illustrate as Fig. 2 B, but be not limited thereto, also can use the mode of other technology that is fit to, as: screen painting, coating, ink-jet, energy source processing etc.In the present embodiment, first patterned semiconductor layer, 230 materials can be germanium silicide or other suitable material or the above-mentioned combinations of amorphous silicon, monocrystalline silicon, microcrystal silicon, polysilicon or above-mentioned lattice.Present embodiment is an example with the polysilicon, but is not limited thereto.
Then, please also refer to Fig. 2 C, on first patterned semiconductor layer 230, form one second patterned conductive layer 240, second patterned conductive layer, 240 exposed portion, the first patterning semiconductive layer 230 wherein, and second patterned conductive layer 240 for example is the first end 114a or the second end 114b of the source electrode 113b of above-mentioned data line 112, above-mentioned first on-off element 113 or drain electrode 113c, above-mentioned lead 115 or above-mentioned second switch element 116, illustrates as Figure 1A or Fig. 2 C.Then, form one second insulation course 250 on first substrate 110 to cover second patterned conductive layer 240, illustrate as Fig. 2 C.
In the present embodiment, the method that forms second patterned conductive layer 240 for example is to utilize chemical wet etching technology, screen printing process, ink-jetting process or other suitable technology.For example, can on first substrate 110, form a metal material layer (not illustrating) earlier comprehensively, then, use chemical wet etching technology metal material layer is patterned as second patterned conductive layer 240, and, illustrate as Fig. 2 C in exposing on part first patterned semiconductor layer.In addition, the mode that forms second insulation course 250 for example is to adopt the method for above-mentioned formation first insulation course 220, does not repeat them here.
Need to prove, finish above-mentioned step after, first on-off element 113 side by side is made on first substrate 110 with second switch element 116, illustrates as Figure 1A and Fig. 2 C.Wherein at least one is an example with the bottom gate type structure to first on-off element 113 of the embodiment of the invention with second switch element 116.In other embodiment, when wherein at least one is the top gate type structure with second switch element 116 as if first on-off element 113, then form first patterned semiconductor layer 230 earlier on substrate, and its method for example is to utilize chemical wet etching technology.For example, can on first substrate 110, form layer of semiconductor material layer (not illustrating) earlier comprehensively, then, use chemical wet etching technology semiconductor material layer is patterned as first patterned semiconductor layer 230, illustrate as Fig. 2 B, but be not limited thereto, also can use the mode of other technology that is fit to, as: screen painting, coating, ink-jet, energy source processing etc.Then, form first insulation course 220 again on first substrate 110 and first patterned semiconductor layer 230.Then, form one first patterned conductive layer 210 again on part first insulation course 220, and be positioned on first patterned semiconductor layer 230, wherein first patterned conductive layer 210 for example is above-mentioned common electrode (not illustrating), above-mentioned sweep trace 111, the first electrode 116a of the grid 113a of the first above-mentioned on-off element 113 or above-mentioned light-emitting component 116.
In addition, the method that forms first patterned conductive layer 210 for example is to utilize chemical wet etching technology, screen printing process, ink-jetting process or other suitable technology.For example, can on first substrate 110, form a metal material layer (not illustrating) earlier comprehensively, then, use chemical wet etching technology metal material layer is patterned as first patterned conductive layer 210.Then, form second insulation course 250 on described first insulation course 220 and described first patterned conductive layer 210 of part.Then, form second patterned conductive layer 240 on part second insulation course 250, second patterned conductive layer, 240 exposed portion, the first patterning semiconductive layer 230 wherein, and second patterned conductive layer 240 for example is the first end 114a or the second end 114b of the source electrode 113b of above-mentioned data line 112, above-mentioned first on-off element 113 or drain electrode 113c, above-mentioned lead 115 or above-mentioned second switch element 116, illustrates as Figure 1A or Fig. 2 C.
In the present embodiment, first on-off element 113 is disposed on first substrate 110, and the grid 113a of first on-off element 113 is electrically connected with sweep trace 111, and the drain electrode 113b of first on-off element 113 is electrically connected with data line 112, wherein an echo area P1 is used as in the zone that is positioned on first substrate 110 of first on-off element 113, illustrates as Figure 1A and Fig. 2 C.In addition, lead 115 is electrically connected with the first end 114a of second switch element 114, and second switch element 113 and first on-off element 113 be electrically insulated, shown in Figure 1A and Fig. 2 C.
Then, please also refer to Figure 1A and Fig. 2 D, form a flatness layer 260 on second insulation course 250, wherein flatness layer 260 exposes part second patterned conductive layer 240, illustrates as Fig. 2 D, but is not limited thereto, and also can not form flatness layer 260.In addition, the surface of flatness layer 260 is formed with a plurality of raised designs 262.In other embodiments, at least one insulating film layer (as: first insulation course 220, second insulation course 250) or at least one conductive film layer (as: first patterned conductive layer 210, second patterned conductive layer 240) that can make thin film transistor (TFT) form a plurality of raised designs (not indicating), then flatness layer 260 is covered in above-mentioned raised design (not indicating), then can conformally go up in flatness layer 260 surfaces and form a plurality of raised designs 262.
In the present embodiment, second patterned conductive layer 240 that is exposed for example is the drain electrode 113c of first on-off element 113.In addition, the mode that forms flatness layer 260 for example is that elder generation uses the long-pending method in chemical gaseous phase Shen or the mode of other technologies that are fit to is formed on first substrate 110 all sidedly, then, use chemical wet etching technology that flatness layer 260 is patterned on second insulation course 250, and expose second patterned conductive layer 240.In addition, the technology that above-mentioned other are fit to can be screen painting, coating, ink-jet, energy source processing etc., but is not limited thereto.
Then, please also refer to Figure 1A and Fig. 2 E, form a light-emitting component 270 on first substrate 110, and be electrically connected with the second end 114b of above-mentioned second switch element 114, wherein a penetrating region P2 is used as in the zone that is positioned on first substrate 110 of light-emitting component 270.Specifically, the mode that forms light-emitting component 270 for example is to use evaporation process, coating process or ink-jetting style, or other suitable modes are to form light-emitting component 270.Present embodiment is with the enforcement example of Organic Light Emitting Diode as light-emitting component 270.
In addition, light-emitting component 270 comprises the first electrode 270a, functional layer 270b and the second electrode 270c, and wherein the first electrode 270a for example is first patterned conductive layer 210 of above-mentioned formation.The rete of functional layer can be divided into hole transmission layer/hole-conductive layer, luminescent layer, electron transfer layer/electron injecting layer, and wherein putting in order of rete complied with the kind of the second switch element that is connected and decided, and as mentioned above, do not repeat them here.
Need to prove that as if being to implement example with the white light emitting diode, then its functional layer can be the mode of double-colored mixed light or three color contamination light.The rete of the functional layer of double-colored mixed light for example is in regular turn: hole injection layer (as: material of CuPc)/hole transmission layer blue light material (as: material of NPB), electron transfer layer red light district (as: material of Alq3:rubrene)/electron injecting layer (as: material of LiF) of holding concurrently of holding concurrently; The rete of the functional layer of three color contamination light for example is in regular turn: hole injection layer (CuPc etc.)/hole transmission layer blue light material (NPB etc.)/restraining barrier (BCP etc.)/red light district (with Alq3:rubrene etc.)/restraining barrier (BCP etc.)/electron transfer layer green Region (Alq etc.)/electron injecting layer (LiF etc.) of holding concurrently of holding concurrently.Above-mentioned only for illustrating, but be not limited thereto.
In order to protect above-mentioned formed light-emitting component 270, more can optionally form a protective seam 272 on light-emitting component 270 to avoid light-emitting component to be subjected to external environment to influence its luminescence efficiency.Present embodiment is example on light-emitting component 270 with protective seam 272, illustrates as Fig. 2 E.For instance, protective seam 272 can be the single or multiple lift structure, and its rete there is no particular restriction in proper order.But preferably, it can be inorganic protective layer (can select SiN, SiOx, SiON etc. for use)/moisture absorption layer (can select the hygroscopic materials of any tool such as MgO for use)/inorganic protective layer (can select SiN, SiOx, SiON etc. for use) in regular turn.Above-mentioned only for illustrating, but be not limited thereto.
Please continue 2E, form protective seam 272 behind light-emitting component 270,, preferably, have polarisation character, optionally more comprise forming an interior light polarizing film 274 on light-emitting component 270, but be not limited thereto for the light that light-emitting component 270 is sent with reference to figure.Preferably, interior light polarizing film 274 is formed on the protective seam 272, but is not limited thereto.The mode of light polarizing film 274 can use the mode of evaporation or other suitable technology modes to be formed on the protective seam 272 in forming.In addition, the relevant narration about interior light polarizing film 274 as previously mentioned, does not repeat them here.
Then, please also refer to Figure 1A, Fig. 2 F and Fig. 2 G, form a pixel electrode 280 on first substrate 110, wherein pixel electrode 280 is electrically connected with the drain electrode 113c of first on-off element 113.Specifically, pixel electrode 280 can be the single or multiple lift rete, and relevant narration as described above.Present embodiment is to implement example with the stratified film, but is not limited thereto.For instance, can use chemical wet etching technology to form a reflecting electrode 280a earlier on the P1 of echo area, illustrate as Fig. 2 F.Then, one transparency electrode 280b is covered on first substrate 110 all sidedly or partly in formation, illustrates as Fig. 2 G.So far, finish the making step of pixel electrode 280.In other embodiment, transparency electrode 280b can form earlier, be covered in transparency electrode 280b with reflecting electrode 280a again and upward or earlier form reflecting electrode 280a, be covered on the reflecting electrode 280a with transparency electrode 280b again, that is to say, the step that forms transparency electrode 280b and reflecting electrode 280a can be exchanged, and the present invention is not limited to this.
In addition, in other embodiments, flatness layer 260 can not form relief pattern 262 earlier, and when forming pixel electrode 280, can (for example be the chemical wet etching technology by technology, or laser-engraving technique, screen printing technology, ink-jet technology or other suitable modes) make its surface directly form a plurality of raised designs 262.
Then, please also refer to Figure 1A and Fig. 2 H, configuration second substrate 120 as the aforementioned and forms above-mentioned liquid crystal layer 130 between first substrate 110 and second substrate 120 in the subtend of first substrate 110 of finishing above-mentioned processing step, illustrates as Figure 1A and Fig. 2 H.Specifically, first substrate 110 and second substrate 120 for example are the attaching process that carries out panel, then, liquid crystal molecule is injected first substrate 110 and second substrate 120 to form liquid crystal layer 130, wherein according to the injection mode of liquid crystal molecule can be adopt vacuum impregnation or the formula injection method that drips (One Drop Filling, ODF).Vacuum impregnation for example is to make the pressure of 120 of first substrate 110 and second substrates less than external pressure, by external pressure liquid crystal molecule is flow into display panels 100 inside.It is before upright first substrate 110 of group and second substrate 120 that the formula of dripping is injected rule, and liquid crystal molecule is inserted on first substrate 110 or second substrate 120 that is formed with frame glue (not illustrating) in the mode of dripping.Subsequently, first substrate 110 and second substrate 120 are fitted by frame glue (not illustrating), so that liquid crystal layer 130 is sealed.So far, finish the making of display panels 100a.
Certainly, display panels 100a more can optionally form and have altogether with electrode layer (not illustrating) on second substrate 120, and then the display mode of this display panels can be vertical alignment mode.In other embodiment, can not dispose common electrode layer 122 on second substrate 120, thus, the display mode of this display panels can be the horizontal direction matching pattern.In addition, can also optionally arrange in pairs or groups a polaroid (not illustrating) on the outside surface of second substrate 120, make the structure of display panels 100a shown in Figure 1B, but be not limited thereto.
What deserves to be mentioned is, in the present embodiment, form the Thickness Design of flatness layer 260, preferably, can make second substrate 110 respectively to first optical path length and second optical path length of echo area P1 and penetrating region be D1, D2,2 * D1=1 * D2 wherein, illustrate associated description such as above-mentioned as Fig. 2 H.In addition, except that raised design, the uneven thickness one of flatness layer can be described as polycrystalline cave structure.
Therefore, the manufacture method of above-mentioned display panels 100,100a, comprehensive, comprise the following steps: at first, one first substrate 110 or 210 are provided.Then, dispose at least one sweep trace 111 on first substrate.Dispose at least one data line 112 on first substrate 110 or 210, and staggered with sweep trace 112, can be with reference to Figure 1A.In addition, dispose at least one first on-off element 113 on first substrate 110,210, wherein the grid 113a of first on-off element 113 is electrically connected with scan-data line 112, and the source electrode 113b of first on-off element 113 is electrically connected with data line 112, and first the zone that is positioned on first substrate 110,210 of on-off element 113 be used as an echo area P1, can be with reference to Figure 1A or Figure 1B.Moreover, dispose at least one second switch element 114 on first substrate 110,210, and be electrically insulated with first on-off element 113, can illustrate with reference to Figure 1A.In addition, dispose at least one lead 115 on first substrate 110, and be electrically connected, can illustrate with reference to Figure 1A with the first end 114a of second switch element 114.Moreover, dispose at least one light-emitting component 116 on first substrate 110,210, and be electrically connected with second end of second switch element 114, wherein a penetrating region P2 is used as in the zone that is positioned on first substrate 110 of light-emitting component 116, can illustrate with reference to Figure 1A and Figure 1B.In addition, dispose at least one pixel electrode 117 on first substrate 110,210, and be electrically connected with the drain electrode 113c of first on-off element 113, can be with reference to Figure 1A and Figure 1B.In addition, dispose at least one first reservior capacitor 118 on first substrate 110,210, and can be electrically connected via the drain electrode 113c of pixel electrode 117 with first on-off element 113.Then, can provide one second substrate 120,220 in the subtend of first substrate 110,210.In addition, provide a liquid crystal layer 130,230 again between first substrate 110,210 and second substrate 120,220, above step all can be simultaneously with reference to Figure 1A and Figure 1B, and above-mentioned step and out-of-order interdependence, and the user can suitably adjust according to its demand.In addition, above step also can be with reference to aforesaid making flow process, and related description does not repeat them here.
Second embodiment
The diagrammatic cross-section of the display panels of another example that Fig. 3 is illustrated for the regional area 101 of Fig. 1.Please refer to Figure 1B and Fig. 3, display panels 300 and display panels 100 structural similarities, and its design that can consider or embodiment also in shown in first embodiment, identical components indicates same-sign, only the two difference be in, the flatness layer 140a of display panels 300 is covered on first substrate 110, and pixel electrode 117 covering flatness layer 140a, as Figure 1B and shown in Figure 3.
Specifically, the flatness layer 140 of first embodiment exposes light-emitting component 116, and the flatness layer 140a of present embodiment is covering luminous element 116 then.It should be noted that the raised design 142 of the flatness layer 140a of present embodiment can be only in the position of echo area P1.Position, material and embodiment thereof that this raised design 142 is provided with also can be consulted the described mode of first embodiment.In the same manner, the pixel electrode 117 that is formed at flatness layer 140a can be the multiple film layer structure, and light polarizing film 150 in pixel electrode 117 coverings, and wherein interior light polarizing film 150 preferably is covered on the flatness layer 140a surface of light-emitting component 116 tops, illustrate as Fig. 3, but be not limited thereto.In other embodiment, interior light polarizing film 150 can be covered on the pixel electrode 117.In addition, pixel electrode for example is to have a reflecting electrode 117a and a transparency electrode 117b.Reflecting electrode 117a is positioned on the flatness layer 140a of echo area P1, and its surface is conformally formed a plurality of raised designs 142, and transparency electrode 117b can comprehensive or partly be covered on first substrate 110, and is positioned at the part of echo area P1, and its surface also can be conformally formed raised design 142.Position and mode that the position of reflecting electrode 117a and transparency electrode 117b and raised design 142 is provided with, as shown in Figure 3 outside, also can consult described other embodiment of first embodiment.
Need to prove that above-mentioned structure is single bug hole structure (as: the thickness homogeneous of flatness layer), its advantage is: can improve all spending together when orientation (rubbing) technology, and can protect light-emitting component 116 to avoid being subjected to the influence of external environment.
In addition, making on the flow process, display panels 300a is similar in the making flow process of the display panels 100a of preceding embodiment, identical sign same-sign, and only the two difference is, the mode that forms flatness layer is different with order.
The making process flow diagram of different production methods and step thereof only is provided for convenience of description.
Fig. 4 A～Fig. 4 E illustrates the making schematic flow sheet into the display panels of second embodiment of the invention, and is that example illustrates with the bottom gate type structure.When other embodiment forms top gate type structure manufacturing process, then can consult the described associated description of first embodiment.Please refer to Fig. 4 A, after finishing second insulation course 250, then, form above-mentioned light-emitting component 270 on first substrate 110, illustrate as Fig. 4 A, wherein the production method of light-emitting component 270 and explanation are as described in the previous embodiment, do not repeat them here.
Then, please refer to Fig. 4 B, form a flatness layer 260a on first substrate 110, wherein flatness layer 260a exposes part second patterned conductive layer 240, and flatness layer 260a covers echo area P1 and penetrating region P2.In addition, as described in the previous embodiment in the part of echo area P1, the surface of flatness layer 260a is formed with a plurality of raised designs 262, wherein forms mode and the explanation of flatness layer 260a, and embodiment is described before being similar to, and just repeats no more at this.In other embodiments, at least one insulating film layer (as: first insulation course 220, second insulation course 250) or at least one conductive film layer (as: first patterned conductive layer 210, second patterned conductive layer 240) that can make thin film transistor (TFT) form a plurality of raised designs (not indicating), then flatness layer 260 is covered in above-mentioned raised design (not indicating), then can conformally go up in flatness layer 260 surfaces and form a plurality of raised designs 262.Then, optionally form an interior light polarizing film 274 on the flatness layer 140a surface of light-emitting component 270 tops, illustrate as Fig. 4 B.Wherein as described in the previous embodiment about the related description of interior light polarizing film 274, do not repeat them here.
Then, please also refer to Fig. 4 C and Fig. 4 D, form pixel electrode 280 on first substrate 110, wherein pixel electrode 280 for example is made of reflecting electrode 280a and transparency electrode 280b.For instance, can use chemical wet etching technology to form a reflecting electrode 280a earlier on the P1 of echo area, illustrate as Fig. 4 C.Then, form a transparency electrode 280b again and be disposed on first substrate 110 all sidedly or partly, light polarizing film 274 in wherein transparency electrode covers illustrates as Fig. 4 D.So far, finish the making step of pixel electrode 280.In other embodiment, can form transparency electrode 280b earlier, be covered on the transparency electrode 280b with reflecting electrode 280a again.
In addition, in other embodiments, flatness layer 260 can not form relief pattern 262 earlier, and when forming pixel electrode 280, can (for example be the chemical wet etching technology by technology, or laser-engraving technique, screen printing technology, ink-jet technology or other suitable modes) make its surface directly form a plurality of raised designs 262.
Then, please also refer to Fig. 2 H and Fig. 4 E, carry out the attaching process of first substrate 110 and second substrate 120, and inject liquid crystal molecule in first substrate 120 and second substrate with formation liquid crystal layer 130, shown in Fig. 4 E.Similarly, the attaching process of present embodiment is as described in the previous embodiment with the mode of injecting liquid crystal molecule, does not repeat them here.So far, finish the making of display panels 300a.
Need to prove, preferably, can make second substrate 110 respectively to first optical path length and second optical path length of echo area P1 and penetrating region be D1, D2, wherein 2 * D1=1 * D2 illustrates as Fig. 4 E.And the Thickness Design of formation flatness layer 260 can be carried out it according to design of above-mentioned polycrystalline cave or single bug hole design respectively.
Similarly, the manufacture method of above-mentioned display panels 300, comprehensive, comprise the following steps: at first, one first substrate 110 is provided.Then, dispose at least one sweep trace on first substrate.Dispose at least one data line 111 on first substrate 110, and staggered with sweep trace 112, can be with reference to Figure 1A.In addition, dispose at least one first on-off element 113 on first substrate 110, wherein the grid 113a of first on-off element 113 is electrically connected with sweep trace 112, and the source electrode 113b of first on-off element 113 is electrically connected with data line 112, and first the zone that is positioned on first substrate 110 of on-off element 113 be used as an echo area, can be with reference to Figure 1A or Fig. 3 B.Moreover, dispose at least one second switch element 114 on first substrate 110, and be electrically insulated with first on-off element 113, can illustrate with reference to Figure 1A.In addition, dispose at least one lead 115 on first substrate 110, and be electrically connected, can illustrate with reference to Figure 1A with the first end 114a of second switch element 114.Moreover, dispose at least one light-emitting component 116 on first substrate 110, and be electrically connected with second end of second switch element 114, wherein a penetrating region P2 is used as in the zone that is positioned on first substrate 110 of light-emitting component 116, can illustrate with reference to Figure 1A and Fig. 3 B.In addition, dispose at least one pixel electrode 117 on first substrate 110, and be electrically connected with the drain electrode 113c of first on-off element 113, can be with reference to Figure 1A and Fig. 3 B.In addition, dispose at least one first reservior capacitor 118 on first substrate 110, and can be electrically connected via the drain electrode 113c of pixel electrode 117 with first on-off element 113.Then, can provide one second substrate 120 in the subtend of first substrate 110.In addition, provide a liquid crystal layer 130 again between first substrate 110 and second substrate 120, above step all can be simultaneously with reference to Figure 1A and Fig. 3 B, and above-mentioned step and out-of-order interdependence, and the user can the suitably adjustment according to its demand.In addition, above step also can be with reference to aforesaid making flow process, and related description does not repeat them here.
The 3rd embodiment
Fig. 5 illustrates and is the schematic equivalent circuit on the display panels of another example of the present invention and first substrate thereof.Please also refer to Figure 1A and Fig. 5, the display panels 500 and display panels 100 similar of present embodiment, identical components indicates same-sign.Only the two difference be in, the display panels 500 of present embodiment more comprises one second reservior capacitor 180.Second reservior capacitor 180 is disposed on first substrate 110, and it is electrically connected with the 3rd end (or being called grid) 114c and the lead 115 of second switch element 114, as shown in Figure 5.
Specifically, first on-off element 113 is the elements for the arrangement of control liquid crystal molecule, and second switch element 114 via lead 115 for example for example is: transmit a square-wave signal (promptly adopting the signal of scan-type) and be unlocked or close, that is to say, when the second switch element is arranged in pairs or groups 180 uses of second reservior capacitor, can provide light-emitting component a stable electric current.In other words, the circuit of above-mentioned connection light-emitting component 116 can make the light-emitting component that is positioned on the penetrating region adopt the luminous mechanism of scan-type.In addition, other by way of example as first and/or the structure of the type of second switch element, light-emitting component 116 and second switch element institute's collocation mode or in the design and implementation that first embodiment and second embodiment are carried, all can be adopted by the 3rd embodiment.In addition, can adopt first embodiment and second embodiment respectively at single bug hole structure (as: the thickness homogeneous of flatness layer is except that raised design) or considering of polycrystalline cave structure (as: uneven thickness one of flatness layer is except that raised design).
The 4th embodiment
Fig. 6 illustrates the more display panels of an example and the schematic equivalent circuit on first substrate thereof into the present invention.Please also refer to Fig. 5 and Fig. 6, the display panels 600 and display panels 500 similar of present embodiment, identical components indicates same-sign.Only the two difference be in, the display panels 600 of present embodiment more comprises another data line 610.Data line 610 is disposed on first substrate 110, and is electrically connected with the lead 115 and second reservior capacitor 180, as shown in Figure 6.Wherein the annexation of second storage capacitors 180 can be consulted shown in the 3rd embodiment.In other example of present embodiment, second storage capacitors 180 can not used yet.
Specifically, because display panels 600 all has two data lines in each pixel region 620, as shown in Figure 6), therefore, if when seeing through data line 112 and transmitting different picture signals respectively with data line 610, display panels 600 is suitable for demonstrating different pictures on echo area (not illustrating) and the penetrating region (not illustrating).
Therefore, display panels 600 is when display image, (for example be: the use of the backlight module of need not arranging in pairs or groups to be saving cost of manufacture, and can reduce the overall weight and the thickness of its making) more can provide the display effect that presents two pictures in display frame except having aforesaid advantage.In addition, other by way of example as first and/or the structure of the type of second switch element, light-emitting component 116 and second switch element institute's collocation mode or the design and implementation carried in first embodiment, all can be adopted by the 3rd embodiment.In addition, can adopt first embodiment and second embodiment respectively at single bug hole structure (as: the thickness homogeneous of flatness layer is except that raised design) or considering of polycrystalline cave structure (as: uneven thickness one of flatness layer is except that raised design).
The 5th embodiment
In addition, as the synoptic diagram of Fig. 7 illustrate into the electrooptical device of one embodiment of the invention.Please refer to Fig. 7, electrooptical device 700 comprises display panels 710 and the electronic component 720 that is electrically connected with it, and wherein display panels 710 for example is to adopt the described display panels 100,300,500,600 of the foregoing description.Because light-emitting component 116 is disposed on first substrate 100, makes display panels 710 need not use the traditional backlight module as backlight, and then saves outside its cost of manufacture, more can make it have compact external form.Therefore, the electrooptical device that adopts above-mentioned display panels has advantage easy to carry and comparatively light and handy concurrently simultaneously except can having lower cost of manufacture.
Advance one, as distinguishing, above-mentioned light-emitting component 116 is integrated in the use that can replace the traditional backlight module on first substrate 110 according to the design of different display modes and rete, and as the display panels of backlight.This display panels can be to be applied to the penetrating type display panel, the semi penetration type display panel, colored filter display panel of (color filter on array) on active layers, active layers display panel of (array on color filter) on colored filter, vertical orientation type (VA) display panel, horizontal switch type (IPS) display panel, multi-domain perpendicular alignment-type (MVA) display panel, twisted nematic (TN) display panel, super-twist nematic (STN) display panel, pattern vertical orientation type (PVA) display panel, super pattern vertical orientation type (S-PVA) display panel, the advanced person is type (ASV) display panel with great visual angle, fringe field switch type (FFS) display panel, continuous fireworks shape arrange type (CPA) display panel, rotational symmetry is arranged micella type (ASM) display panel, optical compensation curved arrange type (OCB) display panel, super horizontal switch type (S-IPS) display panel, advanced super horizontal switch type (AS-IPS) display panel, extreme edge electric field switch type (UFFS) display panel, stabilizing polymer alignment-type display panel, double vision angle type (dual-view) display panel, three visual angle type (triple-view) display panels, 3 d display (three-dimensional), contact panel or other profile plate, or on the display panel of above-mentioned combination.
If as differentiation, it can be organic material, inorganic material or above-mentioned combination, moreover the molecular size of above-mentioned material comprises micromolecule, macromolecule or above-mentioned combination with the material that constitutes light-emitting component.
In addition, electronic component 720 comprises as control element, executive component, treatment element, input element, memory element, driving element, light-emitting component, protecting component, sensing element, detecting element or other function element or aforesaid combination.Generally speaking, the type of electrooptical device comprises panel in portable product (as mobile phone, video camera, camera, notebook computer, game machine, wrist-watch, music player, electronic mail transceiver, map navigator, digital photo or similar products like), video and audio product (as audio and video player or similar products like), screen, TV, billboard, the projector etc.
In sum, display panels of the present invention has following advantage at least.At first, the configuration light-emitting component as the backlight of display panels, that is to say that display panels need not to use backlight module just can show, and then saves its cost of manufacture, and reaches the purpose of dwindling weight and thickness on first substrate.In addition, the pixel electrode of echo area has a plurality of raised designs, and display panels is driven when showing, has better display quality.In addition, can make display panels have comparatively polynary display mode when seeing through unlike signal source or voltage source connection second switch element, for example be the demonstration of dual pictures, or more stable brightness of image.In addition, the present invention also proposes to make above-mentioned display panels method for making.
In addition, above-mentioned display panels is applied in the electrooptical device, similarly, also can makes electrooptical device have comparatively cheap cost of manufacture and comparatively compact external form.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; any have a technical staff in the technical field; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion with claim institute confining spectrum.

Claims (25)

1. a display panels is characterized in that, described display panels comprises:
One first substrate;
At least one sweep trace is disposed on described first substrate;
At least one data line is disposed on described first substrate, and staggered with described sweep trace;
At least one first on-off element, be disposed on described first substrate, and the grid of described first on-off element is electrically connected with described sweep trace and the source electrode of described first on-off element is electrically connected with described data line, wherein, an echo area is used as in the zone that is positioned on described first substrate of described first on-off element;
At least one second switch element is disposed on described first substrate, and is electrically insulated with described first on-off element;
At least one lead is disposed on described first substrate, and is electrically connected with first end of described second switch element;
At least one light-emitting component is disposed on described first substrate, and is electrically connected with second end of described second switch element, and wherein, a penetrating region is used as in the zone that described light-emitting component is positioned on described first substrate;
At least one pixel electrode is disposed on described first substrate, and is electrically connected with the drain electrode of described first on-off element;
At least one first reservior capacitor is disposed on described first substrate, and is electrically connected via the drain electrode of described pixel electrode with described first on-off element;
One second substrate is positioned at the subtend of described first substrate; And
One liquid crystal layer is between described first substrate and described second substrate.
2. as 1 described display panels of claim the, it is characterized in that described lead is electrically connected to a voltage source or a signal source.
3. as 1 described display panels of claim the, it is characterized in that described display panels more comprises one second reservior capacitor, be disposed on described first substrate, and it is electrically connected with an end and the described lead of described second switch element.
4. as 1 described display panels of claim the, it is characterized in that, described second switch element and described first reservior capacitor wherein one of at least the person be positioned at the boundary that zone on described first substrate can be used as described penetrating region, described echo area or said two devices zone.
5. as 1 described display panels of claim the, it is characterized in that described display panels more comprises a flatness layer, cover on described first substrate and expose described light-emitting component, and described pixel electrode covers described flatness layer.
6. as 1 described display panels of claim the, it is characterized in that the surface of described pixel electrode has a plurality of raised designs.
7. as 1 described display panels of claim the, it is characterized in that described display panels more comprises light polarizing film in, is covered on the described light-emitting component.
8. as 1 described display panels of claim the, it is characterized in that described display panels more comprises a flatness layer, cover on described first substrate, and described pixel electrode covers described flatness layer.
9. as claim the 5 or 8 described display panels, it is characterized in that the surface of described pixel electrode has a plurality of raised designs.
10. as 8 described display panels of claim the, it is characterized in that described display panels more comprises light polarizing film in, cover on the described flatness layer surface of described light-emitting component top.
11., it is characterized in that described pixel electrode covers described interior light polarizing film as 10 described display panels of claim the.
12. as 1 described display panels of claim the, it is characterized in that, comprise more on described second substrate that configuration uses electrode layer altogether.
13. as 1 described display panels of claim the, it is characterized in that, on described second substrate and described first substrate on wherein one more comprise the configuration one colored filter.
14. as 1 described display panels of claim the, it is characterized in that, more comprise configuration one polaroid on the outside surface of described second substrate, and do not dispose described polaroid on the outside surface of described first substrate.
15. the manufacture method of a display panels is characterized in that, the manufacture method of described display panels comprises:
One first substrate is provided;
Dispose at least one sweep trace, on described first substrate;
Dispose at least one data line, on described first substrate, and staggered with described sweep trace;
Dispose at least one first on-off element, on described first substrate, and the grid of described first on-off element is electrically connected with described sweep trace and the source electrode of described first on-off element is electrically connected with described data line, wherein, an echo area is used as in the zone that is positioned on described first substrate of described first on-off element;
Dispose at least one second switch element, on described first substrate, and be electrically insulated with described first on-off element;
Dispose at least one lead, on described first substrate, and be electrically connected with first end of described second switch element;
Dispose at least one light-emitting component, on described first substrate, and be electrically connected with second end of described second switch element, wherein, a penetrating region is used as in the zone that described light-emitting component is positioned on described first substrate;
Dispose at least one pixel electrode, on described first substrate, and be electrically connected with the drain electrode of described first on-off element;
Dispose at least one first reservior capacitor, on described first substrate, and be electrically connected via of the drain electrode of described pixel electrode with described first on-off element;
Provide one second substrate, in the subtend of described first substrate; And
Provide a liquid crystal layer, between described first substrate and described second substrate.
16. as 15 described methods of claim the, it is characterized in that, the manufacture method of described display panels more comprises configuration one second reservior capacitor, and on described first substrate, and it is electrically connected with the 3rd end and the described lead of described second switch element.
17., it is characterized in that the manufacture method of described display panels more comprises covering one flatness layer, on described first substrate, and expose described light-emitting component, and described pixel electrode covers described flatness layer as 15 described methods of claim the.
18., it is characterized in that the manufacture method of described display panels more comprises light polarizing film in the covering one, on described light-emitting component as 15 described methods of claim the.
19., it is characterized in that the manufacture method of described display panels more comprises covering one flatness layer as 15 described methods of claim the, on described first substrate, and described pixel electrode covers described flatness layer.
20., it is characterized in that the manufacture method of described display panels more comprises light polarizing film in the covering one as 19 described methods of claim the, on the described flatness layer surface of described light-emitting component top.
21., it is characterized in that the manufacture method of described display panels more comprises disposing uses electrode layer altogether, on described second substrate as 15 described methods of claim the.
22., it is characterized in that the manufacture method of described display panels comprises that more configuration one colored filter is in described second substrate and described first substrate wherein on one as 15 described methods of claim the.
23., it is characterized in that the manufacture method of described display panels more comprises configuration one polaroid, on the outside surface of described second substrate, and is not disposed on the outside surface of described first substrate as 15 described methods of claim the.
24. an electrooptical device is characterized in that, described electrooptical device comprises as 1 described display panels of claim the.
25. the manufacture method of an electrooptical device is characterized in that, the manufacture method of described electrooptical device comprises the manufacture method as 16 described display panels of claim the.
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CN102314271A (en) * 2010-07-07 2012-01-11 宸鸿科技(厦门)有限公司 Capacitive touch graphic structure and manufacturing method thereof, touch panel and touch display device
WO2016119335A1 (en) * 2015-01-30 2016-08-04 京东方科技集团股份有限公司 Display panel, display device and method for manufacturing the display panel
CN107179641A (en) * 2017-06-05 2017-09-19 深圳市华星光电技术有限公司 A kind of array base palte and preparation method thereof, liquid crystal display panel
CN107240589A (en) * 2017-06-05 2017-10-10 深圳市华星光电技术有限公司 A kind of array base palte and preparation method thereof, liquid crystal display panel
CN110232299A (en) * 2018-03-05 2019-09-13 上海箩箕技术有限公司 Liquid crystal display die set
CN110504378A (en) * 2019-08-26 2019-11-26 电子科技大学 A kind of whole soln method flexible white light device and preparation method thereof combined based on organic material and perovskite material

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102314271A (en) * 2010-07-07 2012-01-11 宸鸿科技(厦门)有限公司 Capacitive touch graphic structure and manufacturing method thereof, touch panel and touch display device
CN102314271B (en) * 2010-07-07 2014-11-05 宸鸿科技(厦门)有限公司 Capacitive touch graphic structure and manufacturing method thereof, touch panel and touch display device
WO2016119335A1 (en) * 2015-01-30 2016-08-04 京东方科技集团股份有限公司 Display panel, display device and method for manufacturing the display panel
US9612483B2 (en) 2015-01-30 2017-04-04 Boe Technology Group Co., Ltd. Display panel, display device and manufacturing method of the display panel
CN107179641A (en) * 2017-06-05 2017-09-19 深圳市华星光电技术有限公司 A kind of array base palte and preparation method thereof, liquid crystal display panel
CN107240589A (en) * 2017-06-05 2017-10-10 深圳市华星光电技术有限公司 A kind of array base palte and preparation method thereof, liquid crystal display panel
CN110232299A (en) * 2018-03-05 2019-09-13 上海箩箕技术有限公司 Liquid crystal display die set
CN110504378A (en) * 2019-08-26 2019-11-26 电子科技大学 A kind of whole soln method flexible white light device and preparation method thereof combined based on organic material and perovskite material

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