CN101344694B - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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CN101344694B
CN101344694B CN2008101356643A CN200810135664A CN101344694B CN 101344694 B CN101344694 B CN 101344694B CN 2008101356643 A CN2008101356643 A CN 2008101356643A CN 200810135664 A CN200810135664 A CN 200810135664A CN 101344694 B CN101344694 B CN 101344694B
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transistor
pixel
electrode
liquid crystal
crystal indicator
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CN101344694A (en
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关根裕之
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Tianma Japan Ltd
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NLT Technologeies Ltd
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Abstract

To provide a pixel matrix and the like, which are capable of improving the picture quality by suppressing generation of flicker and crosstalk without deteriorating the numerical aperture of the pixels and without increasing the manufacturing cost. A first switch device has transistors connected in series. When selected by a gate line, the transistors are set ON simultaneously to apply a voltage, which is supplied from a data line, to a pixel electrode. A second switch device has a transistor and a control capacitor. When selected by a gate line different from the one mentioned above, the transistor is set ON to supply a prescribed potential to a connection point between the transistors of the first switch, and the prescribed potential is stored at the control capacitor. When not selected by the both gate lines, the potential of the connection point is kept to the potential stored at the control capacitor.

Description

Liquid crystal indicator
The cross reference of related application
The application is based on 2007-179823 number that submitted on July 9th, the 2007 2008-156741 Japanese patent application with submission on June 16th, 2008, and requires the rights and interests of the right of priority of these two applications, and the content of application is contained in this by reference fully.
Technical field
The present invention relates to a kind of liquid crystal indicator.
Background technology
Active array type LCD can the high resolution displayed high quality images; Thereby the display device that is used as liquid crystal TV set, mancarried device etc. usually; Wherein, active array type LCD comprises and is arranged on the transistor of each pixel as active component.In these active array type LCDs,, utilize polycrystal film transistor (hereinafter being known as " multi-crystal TFT ") to be particularly useful for the little liquid crystal indicator of Pixel Dimensions as transistorized liquid crystal indicator owing to following reason.These reasons are promptly: adopt this type, transistor has high current driving ability, thereby the transistorized size that offers each pixel can reduce; The circuit that is used to produce the signal of supplying with each pixel can be configured in the same substrate that is formed with each pixel.
Figure 22 shows the circuit block diagram of equivalent electrical circuit of a pixel of the liquid crystal indicator that utilizes multi-crystal TFT.Hereinafter furnish an explanation with reference to this accompanying drawing.
In this accompanying drawing, transistor Tr 1 is provided for each pixel.The pixel capacitor Cpix that is connected to the source electrode of transistor Tr is formed by pixel electrode, counter electrode (counter electrode) and the liquid crystal layer that is clipped between these two electrodes.In addition, keep capacitor Cst to be connected to the source electrode of transistor Tr 1.The gate electrode of transistor Tr is connected to gate lines G n, and the drain electrode of transistor Tr 1 is connected to data line Dm.
In the time period of the image that is used for showing that one of liquid crystal indicator shields, transistor Tr 1 operation is to keep being written to pixel capacitor Cpix and the vision signal that keeps capacitor Cst in the most of the time of this time period.If pixel capacitor Cpix does not produce fluctuation with the voltage that keeps capacitor Cst during the retention time section, then can access the little and few meticulous picture quality of crosstalking of flicker.
Recently, very strong such as the performance requirement of high definition and high brightness on the market in display device, realizing.Therefore, the pel spacing of liquid crystal indicator diminishes, as the brightness increase backlight of light source.The transmittance of the pixel of brightness backlight and liquid crystal indicator is almost depended in the brightness of liquid crystal indicator, and the transmittance of pixel according to numerical aperture big change takes place.When pel spacing diminished owing to the realization high definition, numerical aperture also diminished naturally.In addition, pixel capacitor also diminishes with the value that keeps capacitor.And transistorized leakage current increases according to the amount that shines transistorized light.Therefore, in the liquid crystal indicator of high definition and high brightness, during the retention time section, the fluctuation that becomes of pixel capacitor and the voltage that keeps capacitor is glimmered and is crosstalked thereby produce.
Specifically, under the situation of the liquid crystal indicator that utilizes the top grid type multi-crystal TFT, shine directly into transistorized channel part from light backlight.Therefore, its light leakage current becomes greater than the light leakage current of the liquid crystal indicator of the amorphous silicon film transistor that utilizes bottom gate type usually (hereinafter being called " a-SiTFT ").This has caused more how serious problem.
In addition, crosstalk and not only receive the influence of the degree of transistorized leakage current largely, also receive leakage current for " correlativity of the voltage Vds between source electrode and the drain electrode " influence.In addition, the electromotive force of tentation data line Dm is that the voltage of Vdata and pixel capacitor Cpix is Vpix, and then Vds is the function of Vdata and Vpix.Therefore, according to the brightness of the signal that is written to each pixel that is connected with the public data line, the voltage fluctuation between the transistorized source electrode of each pixel and the drain electrode is very big.Therefore, transistorized leakage current will change widely.As a result, when showing specific pattern, the pixel of display pattern will not be affected, and crosstalk thereby produce.
2000-010072 Japan is the open (patent document 1: Fig. 1 etc.) disclose the example of the conventional art that is used to handle these problems of the patent of examination as to substances not.Figure 23 A shows the circuit diagram of the equivalent electrical circuit of a pixel of disclosed liquid crystal indicator in patent document 1.Hereinafter, will furnish an explanation with reference to this accompanying drawing.
In this technology, being used for the transistor that vision signal writes pixel is two transistor Tr 1 and the Tr2 that is connected in series.After completion writes pixel with vision signal; Two transistor Tr 1 are configured to simultaneously non-conductive with Tr2; Intermediate node as the tie point between two transistor Tr 1 and the Tr2 is connected to public wiring ST through the 3rd transistor Tr 3p, and public wiring ST has the voltage of the voltage that equals counter electrode.Adopt these operations, because this two transistor Tr that are connected in series 1 and Tr2, the voltage Vds between the source electrode of the transistor Tr 2 that is connected with pixel and the drain electrode becomes with the electromotive force of data line Dm irrelevant.What consider is therefore can reduce to crosstalk.
Open (the patent document 2: Fig. 2 etc.) disclose another example of above-mentioned conventional art of the patent of the not examination as to substances of 2006-189473 Japan.Figure 23 B shows the circuit diagram of the equivalent electrical circuit of a pixel of disclosed liquid crystal indicator in patent document 2.Hereinafter, will be through furnishing an explanation with reference to this accompanying drawing.
Like the situation of disclosed technology in patent document 1, being used for the transistor that vision signal writes pixel is two transistor Tr 1 and the Tr2 that is connected in series.Method is: two transistor Tr 1 and Tr2 are arranged to non-conductive after, will be connected to public wiring ST through the 3rd transistor Tr 3 as the intermediate node of the tie point between two transistor Tr 1 and the Tr2.Wherein, the voltage that has of public wiring ST approaches the electromotive force of counter electrode.In view of the above, because two transistor Tr 1 that are connected in series and Tr2, the electromotive force that the voltage Vds between the source electrode of the transistor Tr 2 that is connected with pixel and the drain electrode becomes with data line Dm has nothing to do.What consider is therefore can reduce to crosstalk.
Part through simplifying disclosed liquid crystal indicator in the patent document 1 and 2 is described disclosed liquid crystal indicator in patent document 1 and 2, with clear and definite and difference of the present invention.
Yet, the problem below these conventional arts exist.
First problem is that manufacturing cost improves.Adopt the technology of describing in the patent document 1; Be connected in series be used for vision signal write pixel two transistor Tr 1, Tr2 conduction type must be used for providing the conduction type of the 3rd transistor Tr 3p of electromotive force different to intermediate node; Wherein, intermediate node is the tie point of two transistor Tr 1 and Tr2.In patent document 1, what illustrate is that transistor Tr 1, Tr2 are the n channel transistors, and transistor Tr 3p is the situation of p channel transistor.Through as utilize the transistor of different conduction-types in this case; The control line (gate lines G n) that can make the control line (gate lines G n) of the gate electrode that is connected to transistor Tr 1, Tr2 and be connected to the gate electrode of transistor Tr 3p is a same line, can be controlled to be conducting with one in the transistor simultaneously thus and another is controlled to be not conducting.In view of the above, unnecessary two transistors are utilized the Different control line individually.Advantage has been to improve the numerical aperture of pixel.Yet, so just need the technology of structure n channel transistor and p channel transistor, thereby increased manufacturing cost.
Second problem is that numerical aperture is by deterioration.Adopt the technology of describing in the patent document 2, all transistorized conduction types that use in the pixel can be identical.Therefore, do not increase manufacturing cost.Yet, must control two transistor Tr 1 and the gate electrode of Tr2 and the gate electrode of the 3rd transistor Tr 3 that is connected in series through the Different control line.That is, must provide additional control line Con to control the 3rd transistor Tr 3, so just cause the numerical aperture deterioration each pixel column.
Summary of the invention
Therefore, according to the problems referred to above, illustrative purpose of the present invention be to provide a kind of liquid crystal indicator, this liquid crystal indicator is through suppressing flicker and crosstalking and can improve picture quality and the numerical aperture of non-deterioration pixel and do not increase manufacturing cost.
The liquid crystal indicator of illustrative aspects is the picture display device that comprises by the picture element matrix of pixel structure according to the present invention; Each pixel has pixel electrode and is arranged near the point of crossing of many gate lines and many data lines; Wherein, each pixel comprises: first switching device, and it has a plurality of transistor A that are connected in series; Thereby when a plurality of transistor A when being set to conducting simultaneously by the first grid line options; A voltage that provides from many data lines is imposed on pixel electrode, and wherein, first grid polar curve is in many gate lines; With the second switch device; It has transistor B and capacitor, be used for when transistor B when being configured to conducting by the second grid line options, the electromotive force of appointment is supplied with at least one in the tie point between a plurality of transistor A; And the electromotive force of appointment is stored in the capacitor; With the time, in the electromotive force of the tie point of a plurality of transistor A at least one remained the electromotive force that is stored in the capacitor, wherein not by first grid polar curve and second grid line options; The second grid line is in many gate lines, but different with first grid polar curve.
Liquid crystal indicator according to another illustrative aspects of the present invention is the liquid crystal indicator that comprises by the picture element matrix of pixel structure; Each pixel has pixel electrode and is arranged near the point of crossing of many gate lines and many data lines; Wherein, Each pixel comprises: first switching device, it has a plurality of transistor A that are connected in series, when a plurality of transistor A when being set to conducting simultaneously by the first grid line options; The voltage of a supply that will be from many data lines is applied to pixel electrode, and wherein first grid polar curve is in many gate lines; And two the paired neighbors on the picture element matrix comprise at least one transistor B and a plurality of capacitor; The source electrode of this transistor B and drain electrode are connected between at least one tie point or another tie point in the tie point of a plurality of transistor A of at least one and a plurality of pixels in the tie point of a plurality of transistor A of a pixel; And the gate electrode of this transistor B is connected to the second grid line; Wherein the second grid line is in many gate lines one but different with first grid polar curve; One end of these a plurality of capacitors is connected to each in the tie point of a plurality of transistor A of each pixel that is connected with transistor B, and the other end is connected to public electrode.
Description of drawings
Fig. 1 shows the circuit block diagram according to first exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows the equivalent electrical circuit of a pixel;
Fig. 2 shows the circuit block diagram according to first exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows whole equivalent electrical circuit;
Fig. 3 shows the sequential chart of the operation of liquid crystal indicator illustrated in figures 1 and 2 and picture element matrix;
Fig. 4 A shows the circuit block diagram according to second exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows the equivalent electrical circuit of a pixel;
Fig. 4 B shows the circuit block diagram according to the 3rd exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows the equivalent electrical circuit of a pixel;
Fig. 5 shows the circuit block diagram according to the 4th exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows the equivalent electrical circuit that is used for two pixels;
Fig. 6 shows the circuit block diagram according to the 4th exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows whole equivalent electrical circuit;
Fig. 7 shows the sequential chart of the operation of Fig. 5 and liquid crystal indicator shown in Figure 6 and picture element matrix;
Fig. 8 shows the circuit block diagram according to the 5th exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows whole equivalent electrical circuit;
Fig. 9 A shows the circuit block diagram according to the 6th exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows the equivalent electrical circuit that is used for two pixels;
Fig. 9 B shows the circuit block diagram according to the 7th exemplary embodiment of liquid crystal indicator of the present invention and picture element matrix, the figure shows the equivalent electrical circuit that is used for two pixels;
Figure 10 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of first exemplary embodiment and picture element matrix (a);
Figure 11 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of first exemplary embodiment and picture element matrix (b);
Figure 12 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of first exemplary embodiment and picture element matrix (c);
Figure 13 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of first exemplary embodiment and picture element matrix (d);
Figure 14 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of first exemplary embodiment and picture element matrix (e);
Figure 15 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of first exemplary embodiment and picture element matrix (f);
Figure 16 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of the 4th exemplary embodiment and picture element matrix (a);
Figure 17 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of the 4th exemplary embodiment and picture element matrix (b);
Figure 18 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of the 4th exemplary embodiment and picture element matrix (c);
Figure 19 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of the 4th exemplary embodiment and picture element matrix (d);
Figure 20 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of the 4th exemplary embodiment and picture element matrix (e);
Figure 21 shows the planimetric map according to the example of the manufacturing approach of the liquid crystal indicator of the 4th exemplary embodiment and picture element matrix (f);
Figure 22 shows the circuit block diagram of equivalent electrical circuit of a pixel of the liquid crystal indicator that utilizes multi-crystal TFT;
Figure 23 A shows the circuit block diagram of the equivalent electrical circuit of a pixel of disclosed liquid crystal indicator in patent document 1;
Figure 23 B shows the circuit block diagram of the equivalent electrical circuit of a pixel of disclosed liquid crystal indicator in patent document 2.
Embodiment
Hereinafter, will be through describe exemplary embodiment of the present invention with reference to accompanying drawing.
First exemplary embodiment
Fig. 1 and Fig. 2 show the circuit block diagram according to first exemplary embodiment of the liquid crystal indicator with picture element matrix of the present invention.Fig. 1 shows the equivalent electrical circuit of a pixel, and Fig. 2 shows whole equivalent electrical circuit.Hereinafter will furnish an explanation with reference to these accompanying drawings.
Any pixel that pixel 20 expressions among Fig. 1 are taken out from the picture element matrix 11 of Fig. 2.Therefore, in Fig. 1, the reference number of gate line and data line is generally marked work " n " and " m ".Picture element matrix 11 usefulness pixels 20 structure, each has pixel 20 pixel electrode 23 and is arranged near the point of crossing between gate lines G 1～G4 and the data line D1～D4.Each pixel 20 comprises as the switching device 21 of first switching device with as the switching device 22 of second switch device.Switching device 21 has transistor Tr 1, the Tr2 as a plurality of transistor A that are connected in series.When being selected by gate lines G n among gate lines G 1～G4, transistor Tr 1 is configured to conducting (ON) simultaneously with Tr2, thereby the voltage of will a data line Dm from data line D1～D4 supplying with is applied to pixel electrode 23.Switching device 22 has as the transistor Tr 3 of transistor B with as the control capacitance device Ca of capacitor.When being selected by the gate lines G n+1 different among gate lines G 1～G4 with gate lines G n; Transistor Tr 3 is set to conducting (ON); So that the electromotive force of appointment is supplied with the tie point 24 between transistor Tr 1 and the Tr2, and the electromotive force of said appointment is stored among the control capacitance device Ca.When not by gate lines G n and gate lines G n+1 selection, the electromotive force of tie point 24 is retained the electromotive force that is stored among the control capacitance device Ca.
In addition, each pixel 20 has the public wiring ST of the electromotive force of the appointment of being applied with as public electrode.When transistor Tr 3 was selected by gate lines G n+1, transistor Tr 3 was configured to conducting (ON), thereby public wiring ST is connected to control capacitance device Ca, to supply with the electromotive force of appointment to control capacitance device Ca.
In addition; In switching device 21, the gate electrode of transistor Tr 1 and Tr2 is connected to gate lines G n jointly, and the source electrode of transistor Tr 1 is connected to the drain electrode of transistor Tr 2; The drain electrode of transistor Tr 1 is connected to data line Dm, and the source electrode of transistor Tr 2 is connected to pixel electrode 23.In switching device 22; Control capacitance device Ca is connected between the tie point and public wiring ST of transistor Tr 1, Tr2; The gate electrode of transistor Tr 3 is connected to gate lines G n+1, and the source electrode of transistor Tr 3 is connected to tie point 24, and the drain electrode of transistor Tr 3 is connected to public wiring ST.
Liquid crystal indicator 10 according to this exemplary embodiment comprises: it is provided with the transistor substrate of picture element matrix 11; Be arranged to relative substrate in the face of transistor substrate; Be arranged on the liquid crystal layer 13 between transistor substrate and the relative substrate.Transistor substrate also is known as the TFT substrate, and for example, waits and construct the TFT substrate through formation picture element matrix 11, gate driver circuit 14, data driving circuit 15 on substrate of glass.For example, wait and construct relative substrate through on substrate of glass, forming counter electrode 12.
The structure except counter electrode 12, liquid crystal layer 13, gate driver circuit 14 and data driving circuit 15 of liquid crystal indicator 10 is known as picture element matrix 11 hereinafter.In addition, be used for pixel capacitor Cpix of liquid crystal layer 13 structures of a pixel, and keep capacitor Cst to be connected between the source electrode and public wiring ST of transistor Tr 2.Keep capacitor Cst to be removed according to environment.
Next, with operation and the effect of describing this exemplary embodiment.Adopt the picture element matrix 11 and liquid crystal indicator 10 of this exemplary embodiment, when being selected by gate lines G n, transistor Tr 1 is configured to conducting (ON) simultaneously with Tr2, being applied to pixel electrode 23 from the voltage that data line Dm supplies with.When gate lines G n+1 selected, transistor Tr 3 was configured to conducting (ON), supplied to the tie point 24 between transistor Tr 1, the Tr2 with the electromotive force with appointment, and the electromotive force of appointment is stored in control capacitance device Ca.When not by gate lines G n and Gn+1 selection, transistor Tr 1～Tr3 is configured to by (OFF), and the electromotive force of tie point 24 is retained as the electromotive force that is stored among the control capacitance device Ca.In view of the above, when not selected by gate lines G n, the voltage of tie point 24 can be by stable.Therefore, can reduce the leakage current of transistor Tr 2.Make it possible to stablize the voltage of pixel electrode 23 like this, thereby can suppress to glimmer and crosstalk.Here should be noted that: the fact that transistor Tr 1～Tr3 is arranged to conducting by the selection signal of gate lines G n and Gn+1 means that transistor Tr 1～Tr3 is same conduction type.Therefore, compare with the transistorized situation of making different conduction-types, can simplified manufacturing technique, thus can suppress manufacturing cost.In addition, the gate lines G n+1 that is used for driving transistors Tr3 is the transistor Tr 1 that is used to drive another pixel, the wiring of Tr2.Thus, do not need specific wiring to come driving transistors Tr3.Therefore, compare, can improve the numerical aperture of pixel 20 with the situation of the specific wiring of needs.That is, adopt the present invention, can obtain improving image quality and the numerical aperture of non-deterioration pixel 20 and do not increase the picture element matrix 11 etc. of manufacturing cost through the generation that suppresses flicker and crosstalk.
The source electrode of each transistor Tr 1～Tr3 has identical structure with drain electrode, so source electrode and drain electrode can be named on the contrary.Needless to say, here " connection " mean electrical connection." electromotive force of appointment " is not limited to the voltage of public electrode, but also can be the voltage that does not rely on data line, for example constant dc voltage, than the voltage fluctuation small voltage (promptly stable voltage) of data line.These also are applied to the exemplary embodiment that hereinafter is described.
Hereinafter, with the picture element matrix 11 and liquid crystal indicator 10 described in more detail according to first exemplary embodiment.
Fig. 2 shows the structure of the liquid-crystal apparatus 10 of exemplary embodiment.Fig. 1 shows any pixel 20 of therefrom taking out.Liquid crystal indicator 10 is by configurations: picture element matrix 11, the pixel with matrix arrangement is arranged on it, wherein, pixel arrangement in a longitudinal direction and the data line that is provided with of horizontal direction (D1～D4) and gate line are (near each point of crossing between the G1～G4); The data driving circuit 15 that is used for driving data lines; The gate drivers 14 that is used for the driving grid line.Each pixel of picture element matrix 11 is by following device configuration: two transistor Tr 1 of arranged in series, Tr2 (the one of which end is connected in data line, and the other end is connected in pixel capacitor Cpix and keeps capacitor Cst); Be connected in the pixel capacitor Cpix of Tr2; Keep capacitor Cst; Be connected in the control capacitance device Ca of the tie point between Tr1 and the Tr2; And with the transistor Tr 3 of the parallelly connected layout of control capacitance device Ca.Keep the other end of capacitor Cst and the other end of control capacitance device Ca to be connected with wiring ST, wiring ST is common to all pixels.Each pixel capacitor Cpix is the capacitor by counter electrode 12 (though the not illustrating) formation of suprabasil pixel electrode of TFT and substrate relatively; Wherein, The TFT substrate has and is formed on lip-deep transistor, and substrate is relative with the TFT substrate relatively, and liquid crystal layer 13 is arranged between them.In addition; The number of the lead-out terminal of gate driver circuit 14 Duos 1 at least than the number of the pixel column of the valid pixel of the demonstration that helps picture element matrix 11, and the lead-out terminal of gate driver circuit 14 is connected to the gate lines G 5 of arranging along the marginal portion of the valid pixel of picture element matrix 11.The gate terminal of Tr1 and Tr2 is connected to the common gate polar curve, and the gate terminal of Tr3 is connected to one of them gate line in two adjacent gate lines, and it is different from the gate line that is connected to Tr1 and Tr2.
In Fig. 2, four data lines and four gate lines of being connected in valid pixel are arranged.Yet the number of these lines is not limited to this numerical value.In addition; Can in the substrate that is formed with pixel transistor, form data driving circuit 15 and gate driver circuit 14 through identical technology, perhaps one or two in data driving circuit 15 and the gate driver circuit 14 can be formed in another substrate and be electrically connected to transistor.
Then, will be through describing action with reference to sequential chart shown in Figure 3.This sequential chart shows the variation that is written to time period inner control signal wire according to a plurality of pixel columns of the liquid crystal indicator of example embodiment, pixel voltage etc. in vision signal.Each expression of time period TH1～TH4 is used to write a leveled time section (horizontalperiod) of the vision signal of a pixel column.G1～G5 is respectively the voltage waveform of gate lines G 1～G5, and D1 is the voltage waveform of data line D1.The pixel electrode electromotive force (pixel capacitor electromotive force) of the pixel that " Vpix (1,1) " expression is connected with data line D1 with gate lines G 1, Va (1,1) representes the voltage of the control capacitance device Ca of this pixel.Similarly, the pixel electrode electromotive force of the pixel that " Vpix (2,1) " expression is connected with data line D1 with gate lines G 2, Va (2,1) representes the voltage of the control capacitance device Ca of this pixel.
In time period TH1, when the potential change of gate lines G 1 is that pixel transistor Tr1 and Tr2 are configured to conducting state when making the voltage of Tr1, Tr2 conduction.In view of the above, the electromotive force Vsigl of data line D1 is written to pixel capacitor Cpix and keeps capacitor Cst.Here should be noted in the discussion above that Vsigl is corresponding to the voltage that will be presented at the vision signal on the pixel.With simultaneously, identical voltage Vsigl also is written to control capacitance device Ca.At this moment, the gate terminal of Tr3 is connected to gate lines G 2, makes Tr3 be in cut-off state.Then, when the potential change of G1 when making pixel transistor Tr1, the nonconducting electromotive force of Tr2, transistor Tr 1, Tr2 and Tr3 become cut-off state.Each pixel to being connected in data line D2～D4 and gate lines G 1 is carried out similar operation, and the vision signal of a pixel column is written to pixel capacitor Cpix and keeps capacitor Cst.
Then, in time period TH2, gate lines G 2 is changed to the electromotive force that makes the pixel transistor conduction, thereby the Tr3 of each pixel that is connected with gate lines G 1 is changed to conducting state.Therefore, the Vst of electromotive force as wiring ST is written to control capacitance device Ca.After being changed to the electromotive force that makes transistor become cut-off state in gate lines G 2, Vst is maintained among the control capacitance device Ca.Simultaneously in view of the above, through aforesaid identical operations, vision signal is written to the pixel capacitor Cpix and maintenance capacitor Cst of each pixel that is connected with gate lines G 2.
Time period TH4 is the time period that vision signal is written to each pixel that is connected with gate lines G 4, and in valid pixel, vision signal is written into each pixel that is connected with gate lines G 4 at last.Be used for vision signal is written to the pixel capacitor Cpix of each pixel that is connected with gate lines G 4 and keeps the operation of capacitor Cst to be and aforesaid operation identical operations.At the end of time period TH4, be used for being written to pixel capacitor Cpix, maintenance capacitor Cst and the control capacitance device Ca of each pixel that is connected with gate lines G 4 in the vision signal of each pixel display video.
Then, at time period TH5, gate lines G 5 is changed to the electromotive force that makes the pixel transistor conduction, and the Tr3 of each pixel that therefore is connected with gate lines G 4 becomes conducting state.In view of the above, be written to the control capacitance device Ca of each pixel that is connected with gate lines G 4 as the Vst of electromotive force of wiring ST.
Through a series of these operations, vision signal is written to all pixel capacitor Cpix of valid pixel and each that keeps among the capacitor Cst.Therefore, be in vision signal in each pixel and keep operating in the time period of (pixel transistor Tr1 and Tr2 in each pixel are in the operation under the cut-off state), the voltage Vst of wiring ST is written into and remains to control capacitance device Ca.Here be noted that Vst is the value of the voltage of counter electrode no better than.
Though pixel transistor Tr1, Tr2 and Tr3 are the n transistor npn npns under the situation about having described before this, also can utilize the p transistor npn npn.In this case, the electromotive force of every gate line can become simply make the p type can conduct electricity with nonconducting state.In addition, as for channel width W1～W3 (Figure 11) of Tr1, Tr2 and Tr3, the channel width W3 of Tr3 can be configured to less than the channel width W1 of Tr1, Tr2, W2.Reason is: it is enough that Tr3 has the characteristic that writes control capacitance device Ca, and the value of Ca can be less than pixel capacitor Cpix and the value that keeps capacitor Cst sum.In addition; The situation of some counter-rotating or gate line counter-rotating has been described; Under the situation of a counter-rotating or gate line counter-rotating; In a frame time section of the vision signal that is used for showing a screen, be used for the vertical adjacent and polarity of vision signal that be connected to two pixels of same data line of being written to of counter electrode and be inverted with liquid crystal indicator.Yet, also can be that polarity becomes identical data line counter-rotating or frame counter-rotating.In addition, also can have following operation: the pixel that will be connected to same gate line in the leveled time section is divided into a plurality of, and vision signal is written to module unit with the mode of time-division.
Employing is according to liquid crystal indicator of the present invention, and voltage fluctuation can be suppressed for a short time in the retention time section of pixel capacitor Cpix and maintenance capacitor Cst.Therefore, can reduce greatly the flicker and crosstalk.In addition, can realize structure of the present invention through the low method of adopting process cost.In addition, adopt structure of the present invention, numerical aperture is not basically by deterioration.Hereinafter its reason will be described.
When the method that is used for AC driving liquid crystal is used some reversal process or gate line counter-rotating; The pixel capacitor Cpix that is written to each pixel from vision signal and the point that keeps capacitor Cst were written to almost half of time period of the pixel capacitor Cpix of each pixel and the point that keeps capacitor Cst to next vision signal in, the vision signal that the polarity with respect to the vision signal that is written to respective pixel that is used for counter electrode has opposed polarity was written to the data line that is connected with this pixel.Yet; In liquid crystal indicator according to the present invention; Control capacitance device Ca is provided to the tie point of pixel transistor Tr1, Tr2; Be in the major part of the time period that keeps operation at Tr1 and Tr2, be written to control capacitance device Ca as electromotive force Vst with the incoherent wiring of data line electromotive force ST.Therefore, the source electrode-drain voltage Vds that is connected to pixel capacitor Cpix and the transistor Tr 2 that keeps capacitor Cst becomes and has Vst with respect to being written to pixel capacitor Cpix and the electric potential difference of the voltage that keeps capacitor Cst.Because Vst is the voltage of counter-electrode potential no better than, the Vds of Tr2 become about the voltage that is applied to data line to mostly.Transistorized leakage current depends on Vds, increases along with Vds becomes big leakage current.Therefore, reduce Vds and equal to reduce leakage current.Therefore, can reduce the flicker and crosstalk.In addition, fluctuate, crosstalk so produce because transistorized leakage current is in the voltage that is written to data line in the time period that keeps operation according to pixel.Therefore, under situation of the present invention, when data line electromotive force in the retention time section becomes and source electrode-when drain voltage Vds is uncorrelated, does not produce and crosstalk.
When utilizing the counter-rotating of data line counter-rotating or frame, in each pixel of liquid crystal indicator, be written in the last stage of a frame in the pixel of vision signal and and be written in the pixel of vision signal at after-stage, influence is different.Be written in the last stage under the situation of pixel of vision signal, in the major part of frame time section, the polarity of the vision signal that is written to pixel that is used for counter electrode is identical with the polarity of the signal that is applied to data line that is used for counter electrode.Simultaneously, be written at after-stage under the situation of pixel of vision signal, in the major part of frame time section, the polarity of the vision signal that is written to pixel that is used for counter electrode is different with the polarity of the signal that is applied to data line that is used for counter electrode.Therefore, in traditional liquid crystal display device, be written in the pixel of vision signal in the last stage, the source electrode-drain voltage of pixel transistor is little, and leakage current also diminishes.Simultaneously, be written in the pixel of vision signal at after-stage, the source electrode-drain voltage of pixel transistor is big, and leakage current also becomes big.Therefore, be written in the pixel of vision signal at after-stage, glimmering and crosstalking becomes extensively, makes in the plane of liquid crystal indicator, to be difficult to make flicker evenly.Simultaneously, adopt liquid crystal indicator of the present invention, the source electrode-drain voltage Vds with pixel capacitor and the transistor Tr 2 that keeps capacitor to be connected of each pixel becomes uncorrelated with the data line electromotive force.Therefore, the last stage be written into vision signal pixel leakage current and be written at after-stage between the leakage current of pixel of vision signal and do not have difference.Therefore, can significantly reduce the flicker and crosstalk.
In addition, owing to can be configured to all crystals pipe of pixel with the transistor of same type.Therefore, compare with the situation of n transistor npn npn, can reduce the technology cost with using the p transistor npn npn simultaneously.In addition, except being used to control the gate line and data line of three transistor Tr 1～Tr3, in each pixel, any other control line need be provided.Therefore, can the degradation inhibiting of numerical aperture be arrived minimum.
Then, will be through describe the driving method of picture element matrix 11 referring to figs. 1 through Fig. 3.This driving method is the exemplary embodiment according to picture element matrix driving method of the present invention, and the aforesaid operations of picture element matrix 11 will be described to driving method.
Driving method according to this exemplary embodiment is the method that is used for driving pixels matrix 11; Picture element matrix 11 usefulness have pixel 20 structures of pixel electrode 23, and pixel 20 is arranged to matrix near the point of crossing between gate lines G 1～G4 and the data line D1～D4.At first; When each pixel 20 with transistor Tr 1～Tr3 of being connected in series and control capacitance device Ca is selected by a gate lines G m among gate lines G 1～G4; Transistor Tr 1, Tr2 are arranged to conducting simultaneously; Being applied to pixel electrode 23 from the voltage that data line Dm supplies with, wherein data line Dm is among data line D1～D4.Subsequently, when being selected by gate lines G n+1, transistor Tr 3 is set to conducting, so that predetermined electromotive force is supplied to the tie point 24 between transistor Tr 1 and the Tr2, and predetermined electromotive force is stored in control capacitance device Ca.Then, when not selected with G2 by gate lines G 1, transistor Tr 1～Tr3 is set to end, and the electromotive force of the tie point 24 between the transistor Tr 1, Tr2 is retained as the electromotive force that is stored among the control capacitance device Ca.The driving method of this exemplary embodiment can provide function and similar function of effect and the effect with above-mentioned picture element matrix 11.
Exemplary advantage according to the present invention is following.Adopt the present invention, when by the first grid line options, a plurality of transistor A are configured to conducting simultaneously, to apply the voltage of supplying with from data line to pixel electrode.When by the second grid line options, transistor B is set to conducting, supply with predetermined electromotive force for one of the tie point between a plurality of transistor A at least, and predetermined potential is stored in the capacitor.When not by first grid polar curve and second grid line options, transistor A and transistor B are configured to end, and the electromotive force of at least one tie point between a plurality of transistor A is retained as the electromotive force that is stored in the capacitor.In view of the above, when not by the first grid line options, can stablize the voltage of the tie point between a plurality of transistor A.Thus, can reduce the leakage current of a plurality of transistor A.This makes it possible to stablize the voltage of pixel electrode, therefore can suppress to glimmer and crosstalk.Here should be noted in the discussion above that the fact that transistor A and the B selection signal through first grid polar curve and second grid line is set to conducting means that transistor A and B are same conduction types.Therefore, compare with the transistorized situation of making different conduction-types, can simplified manufacturing technique, thus can suppress manufacturing cost.In addition, the second grid line that is used for driving transistors B is the wiring that is used to drive the transistor A of another pixel.Therefore, do not need special wiring to be used for driving transistors B.Therefore, compare, can improve the numerical aperture of pixel with the situation of the special wiring of needs.That is, can adopt the present invention through can the be improved picture element matrix etc. of numerical aperture of picture quality and non-deterioration pixel of the generation that suppresses flicker and crosstalk, and while do not increase manufacture original.
Second exemplary embodiment
Fig. 4 A shows the circuit block diagram according to second exemplary embodiment of picture element matrix of the present invention and liquid crystal indicator, and is the equivalent electrical circuit of a pixel.Hereinafter will scheme to furnish an explanation with reference to this.Identical reference number is applied to the device identical with Fig. 1, and will omit its explanation.
Except the inside of pixel, identical with structure shown in Figure 2 according to the structure of the entire liquid crystal display device of this exemplary embodiment.In this exemplary embodiment, the switching device 31 of pixel 30 is different with first exemplary embodiment.In second exemplary embodiment, four pixel transistors are provided to each pixel 30.Wherein, transistor Tr 1, Tr2 and Tr4 are connected in series, and are connected to data line Dm as the Tr1 of an end, and are connected to pixel capacitor Cpix and keep capacitor Cst as the Tr4 of the other end.In addition, the gate electrode of Tr1, Tr2 and Tr4 is connected to common gate polar curve Gn.Control capacitance device Ca and transistor Tr 3 are connected to the tie point of Tr1 and Tr2.The other end of Cst and the other end of Ca are connected to wiring ST, and wiring ST is public for all pixels.In addition, the other end of Tr3 also is connected to wiring ST, and gate terminal is connected to gate lines G n+1, and Gn+1 is the line adjacent with Gn.
That is, in this structure, the pixel transistor Tr2 in the structure of Fig. 1 is formed double-gated transistor.Needless to say, the corresponding transistor that is connected in data line with pixel transistor Tr1 also can form double-gated transistor in the structure of Fig. 1.In addition, these transistors also can form has multiple-grid,, can form tri-gate transistors that is.Yet,, be used to place transistorized area and increase, thereby make the numerical aperture deterioration when transistor is formed when having multiple-grid.Therefore, hope only to have the transistor that is connected with the pixel capacitor that is formed with multiple-grid (corresponding to the pixel transistor Tr2 in the structure of Fig. 1).In addition, though described situation, also can use the p transistor npn npn with n transistor npn npn structure pixel transistor at this.
Operation according to the liquid crystal indicator of second exemplary embodiment is identical with the operation of the liquid crystal indicator shown in Fig. 2.Adopt the liquid crystal indicator of second exemplary embodiment, can be suppressed to the fluctuation in the retention time section of pixel capacitor Cpix and maintenance capacitor Cst very little.Therefore, can significantly reduce the flicker and crosstalk.In addition, the structure that can come realization example property embodiment with the method for low technology cost.In addition, when suppressing the deterioration of numerical aperture, structure that can realization example property embodiment.Its reason is, can reduce the transistor Tr 2 that is connected to pixel capacitor and the leakage current of Tr4, and this is identical with the reason of in first exemplary embodiment, describing.In addition; The transistor that is written to the voltage of pixel capacitor owing to maintenance in this exemplary embodiment is constructed to have two transistor Tr that are connected in series 2 and Tr4; Therefore each among transistor Tr 1 and the Tr4 get source electrode-drain voltage can be by dividing potential drop; Make and compare, can further reduce leakage current with situation shown in Figure 1.
The 3rd exemplary embodiment
Fig. 4 B shows the circuit block diagram according to the 3rd exemplary embodiment of picture element matrix of the present invention and liquid crystal indicator, and this figure is the equivalent electrical circuit of a pixel.Hereinafter, will be through scheming to furnish an explanation with reference to this.Identical reference number is applied to the device identical with Fig. 1, and will omit the explanation to it.
Except pixel inside, identical with structure shown in Figure 2 according to the structure of the entire liquid crystal display device of the 3rd exemplary embodiment.In this exemplary embodiment, the switching device 42 of pixel 40 is different with first exemplary embodiment.In switching device 42, the transistor Tr 3 that is used for signal is written to control capacitance device Ca is connected to the wiring STA different with the ST that connects up.Should be noted in the discussion above that here the voltage of wiring STA is the voltage of the electromotive force of counter electrode 12 no better than as the situation of wiring ST.That is, for example, connect, form wiring ST and not rung by film with wiring STA through buffer circuit.Though described the situation of constructing pixel transistor with the n transistor npn npn at this, also can use the p transistor npn npn.
Identical according to the operation of the liquid crystal indicator of the 3rd exemplary embodiment with the operation of liquid crystal indicator shown in Figure 2.Adopt the liquid crystal indicator of the 3rd exemplary embodiment, the fluctuation of the voltage in the retention time section of pixel capacitor Cpix and maintenance capacitor Cst can be suppressed to very little.Therefore, can significantly reduce the flicker and crosstalk.In addition, can realize the structure of this exemplary embodiment with the method for low technology cost.In addition, when suppressing the deterioration of numerical aperture, structure that can realization example property embodiment.Its reason is identical with the described reason of first exemplary embodiment.In addition, adopt the structure of this exemplary embodiment, the transistor Tr 3 that the voltage of counter-electrode potential no better than is written to control capacitance device Ca is connected to the wiring STA different with the ST that connects up.Therefore, be connected to all pixels the maintenance capacitor wiring ST electromotive force since the electric current that when Tr3 is in conducting state, flows and not fluctuating glimmer thereby can become further minimizing.
The 4th exemplary embodiment
Fig. 5 and Fig. 6 show the circuit block diagram according to the 4th exemplary embodiment of picture element matrix of the present invention and liquid crystal indicator.Fig. 5 is the equivalent electrical circuit that is used for two pixels, and Fig. 6 shows whole equivalent electrical circuit.Hereinafter, will be through furnishing an explanation with reference to these accompanying drawings.Identical reference number is applied to the device identical with the assembly of Fig. 1 and Fig. 2, and will omit the explanation to it.
In the picture element matrix 51 of this exemplary embodiment, the picture element matrix 11 of the switching device 62A in the pixel 60A, 60B, 62B and first exemplary embodiment different.That is, picture element matrix 51 is constructed to have pixel 60A and the 60B that respectively has pixel electrode 23, pixel 60A and 60B near the point of crossing between gate lines G 1～G4 and the data line D1～D4 with the arranged in form of matrix.Among pixel 60A and the 60B each comprises the switching device 21 as first switching device.Switching device 21 has transistor Tr 1, the Tr2 as a plurality of transistor A that are connected in series.When being selected by a gate lines G n among gate lines G 1～G4; Tr1 and Tr2 are set to conducting simultaneously; Being applied to pixel electrode 23 from the voltage that data line Dm or data line Dm+1 provide, wherein data line Dm or data line Dm+1 are among data line D1～D4.In addition, picture element matrix 51 comprises as the transistor Tr 3 of the transistor B that offers pixel 60A with as each the control capacitance device Ca of a plurality of capacitors that offers among pixel 60A and the 60B.The source electrode of transistor Tr 3 and drain electrode are connected to the transistor Tr 1 of transistor Tr 1, the tie point 24 between the Tr2 and the pixel 60B of pixel 60A, the tie point 24 between the Tr2, and the gate electrode of transistor Tr 3 is connected to the gate lines G n+1 different with gate lines G n.The end of control capacitance device Ca is connected to tie point 24, and the other end is connected to the wiring ST of predetermined potential.
In addition, each among pixel 60A and the pixel 60B has counter electrode 12, and counter electrode 12 is arranged in the same substrate with pixel electrode 23, or is arranged in the independent substrate.Among pixel 60A and the pixel 60B each receives the electric field controls between pixel electrode 23 and the counter electrode 12.Among two the pixel 60A and pixel 60B that tie point 24 between corresponding crystal pipe Tr1 and Tr2 connects through transistor Tr 3; Counter electrode 12 has identical electromotive force, and each the signal of pixel electrode 23 that is applied among pixel 60A, the 60B has the polarity that is different from corresponding counter electrode 12.
In addition, each among pixel 60A and the pixel 60B has the wiring ST as public electrode.The gate electrode of transistor Tr 1, Tr2 is connected to gate lines G n jointly; The source electrode of transistor Tr 1 is connected to the drain electrode of transistor Tr 2; The drain electrode of the transistor Tr 1 of pixel 60A is connected to data line Dm; The drain electrode of the transistor Tr 1 of pixel 60B is connected to data line Dm+1, and the source electrode of transistor Tr 2 is connected to pixel electrode 23.Control capacitance device Ca is connected between the tie point 24 of wiring ST and transistor Tr 1 and Tr2; The gate electrode of transistor Tr 3 is connected to gate lines G n+1; The drain electrode of transistor Tr 3 is connected to the tie point 24 of pixel 60A, and the source electrode of transistor Tr 3 is connected to the tie point 24 of pixel 60B.
Hereinafter, with the picture element matrix 51 and liquid crystal indicator 50 described in more detail according to this exemplary embodiment.
Fig. 6 shows the structure of the liquid crystal indicator 50 of this exemplary embodiment, and Fig. 5 shows optional two neighbor 60A and 60B.Liquid crystal indicator 50 is configured to have: picture element matrix 51, the pixel on it with the mode of matrix be arranged in the data line that longitudinal direction and horizontal direction be provided with (D1～D4) and gate line (and each point of crossing between the G1～G4) near; The data driving circuit 15 that is used for driving data lines; And the gate driver circuit 14 that is used for the driving grid line.Each pixel comprises at least: two transistor Tr 1, Tr2 of arranged in series (end is connected to data line, and the other end is connected to pixel capacitor Cpix and keeps capacitor Cst) are connected to the pixel capacitor Cpix of Tr2; Keep capacitor Cst; And the control capacitance device Ca that is connected to the tie point between Tr1 and the Tr2.Be connected to two adjacent data lines and be connected in two pixels of same gate line at least one have the 3rd transistor Tr 3.The gate terminal of Tr3 is connected to the different gate line of gate line with the pixel transistor Tr1 that is connected with this pixel, Tr2, and the source terminal of Tr3 and drain electrode end are connected respectively to the pixel transistor Tr1 of two neighbors and the tie point of Tr2.Keep the other end of capacitor Cst and the other end of control capacitance device Ca to be connected to the public wiring ST of all pixels.Each pixel capacitor Cpix be by the suprabasil pixel electrode of TFT 23, with the capacitor of counter electrode 12 (though the not illustrating) structure of substrate relatively; Wherein, The TFT substrate has and is formed on lip-deep transistor; Substrate is relative with the TFT substrate relatively, and liquid crystal layer 13 is arranged between TFT substrate and the relative substrate.In addition, the number of the output terminal of gate driver circuit 14 Duos 1 at least than the number of the pixel column of the valid pixel of the demonstration that helps picture element matrix 51, and its terminal be connected to arrange along the marginal portion of the valid pixel of picture element matrix 51 gate lines G 5.
Next, will through given gate line gate lines G n and data line Dm be described with concrete mode.Specifically, in the left side that is connected to gate lines G 1 and two adjacent data line D1 and D2 and right side two pixel 60A and 60B adjacent one another are, the Tr1 and the gate terminal of Tr2 that are connected to the pixel 60A of D1 are connected to G1.Tr3 is provided for pixel 60A, and the gate terminal of Tr3 is connected to G2.For the pixel 60B that is connected to D2 Tr3 is not provided, and the gate terminal of Tr1, Tr2 is connected to G1.The source terminal of Tr3 that is connected to the pixel 60A of D1 is connected to Tr1, the tie point between the Tr2 24 of the pixel 60A that is connected with D1, and its drain terminal is connected to Tr1, the tie point between the Tr2 24 of the pixel 60B that is connected with D2.Similarly, in the left side that is connected to adjacent data line D3 and D4 and right side two pixel 60A and 60B adjacent one another are, Tr3 offers the pixel 60A that is connected with D3.The source terminal of transistor Tr 3 is connected to the Tr1 of the pixel 60A that is connected with D3 and the tie point between the Tr2, and its drain terminal is connected to and the Tr1 of the pixel 60B that D4 is connected to and the tie point between the Tr2 24.
Yet in the pixel adjacent one another are of left side that is connected to adjacent data line D2 and D3 and right side, the intermediate point between Tr1 and the Tr2 does not connect through transistor.That is, outside two pixels adjacent one another are of left side and right side, the transistor Tr 1 of each pixel and the tie point between the Tr2 connect through the 3rd transistor Tr 3, and wherein the 3rd transistor Tr 3 offers one of them in the paired pixel.
Under situation shown in Figure 6, four data lines and four gate lines of being connected to valid pixel are arranged.Yet the number of these lines is not limited to such numerical value.In addition; Can data driving circuit 15 and gate driver circuit 14 be formed in the substrate that is formed with pixel transistor through identical technology, perhaps one or two circuit in data driving circuit 15 and the gate driver circuit 14 can be formed in another substrate and be electrically connected to transistor.
Next, will be through describing operation with reference to sequential chart shown in Figure 7.This sequential chart shows the variation that is written to time period inner control signal wire according to a plurality of pixel columns of the liquid crystal indicator of exemplary embodiment, pixel voltage etc. in vision signal.Each expression among time period TH1～TH4 is used for a pixel column is write a leveled time section of vision signal.G1～G5 is respectively the voltage waveform of gate lines G 1～G5, and D1, D2 are respectively the voltage waveforms of data line D1, D2." Vpix (1,1) " expression is connected to the pixel electrode electromotive force (pixel capacitor electromotive force) of the pixel of gate lines G 1 and data line D1, and Va (1,1) representes the voltage of the control capacitance device Ca of this pixel.Similarly, Vpix (1,2) " expression is connected to the pixel electrode electromotive force of the pixel of gate lines G 1 and data line D2, and Va (1,2) representes the voltage of the control capacitance device Ca of this pixel.
In time period TH1, for the pixel that is connected with data line D1 with gate lines G 1, when the electromotive force of gate lines G 1 became the voltage that makes Tr1, Tr2 conduction, pixel transistor Tr1 and Tr2 were configured to conducting state.In view of the above, the electromotive force Vsig1A of data line D1 is written to pixel capacitor Cpix and keeps capacitor Cst.Should be noted in the discussion above that at this Vsig1A is corresponding to the voltage that is displayed on the vision signal on the pixel.Simultaneously in view of the above, identical voltage Vsig1A also is written to control capacitance device Ca.At this moment, the gate terminal of Tr3 is connected to gate lines G 2, makes Tr3 be in cut-off state.Simultaneously, for the pixel that is connected to gate lines G 1 and data line D2, the electromotive force Vsig1B of data line D2 is written to pixel capacitor Cpix, keeps capacitor Cst and control capacitance device Ca.Then, when the electromotive force of G1 becomes when making pixel transistor Tr1 and the nonconducting electromotive force of Tr2, all crystals pipe Tr1, Tr2 and the Tr3 of each pixel become cut-off state.Carry out similar operation with in the pixel that data line D3, D4 and gate lines G 1 are connected each, and the vision signal that is used for a pixel column is written to pixel capacitor Cpix and keeps capacitor Cst.
Then, in time period TH2, gate lines G 2 becomes the electromotive force that makes the pixel transistor conduction, and each in the transistor Tr 3 of the feasible pixel that is connected with gate lines G 1 becomes conducting state.Therefore, the electromotive force of control capacitance device Ca becomes the average voltage of the electromotive force of two neighbors.Specifically, for pixel that is connected with data line D1 with gate lines G 1 and the pixel that is connected with data line D2 with gate lines G 1, the electromotive force of the control capacitance device Ca of two pixels becomes the voltage of (Vsig1A+Vsig1B)/2 as shown in Figure 7.Simultaneously in view of the above, through aforesaid identical operations, vision signal is written to the pixel capacitor Cpix and maintenance capacitor Cst of each pixel that is connected with gate lines G 2.
Time period TH4 is the time period that vision signal is written to each pixel that is connected with gate lines G 4, and wherein, this pixel is the pixel of the vision signal that in valid pixel, is written at last.Be used for vision signal is written to the pixel capacitor Cpix of each pixel that connects with gate lines G 4 and keeps the operation of capacitor Cst identical with aforesaid operation.At the end of time period TH4, be used for being written to pixel capacitor Cpix, maintenance capacitor Cst and the control capacitance device Ca of each pixel that is connected with gate lines G 4 in the vision signal of each pixel display video.
Then, in time period TH5, gate lines G 5 becomes the electromotive force that makes pixel transistor conduction, make with transistor Tr 3 that gate lines G 4 is connected in each become conducting state.The electromotive force of the control capacitance device Ca of each pixel that is connected with gate lines G 4 in view of the above, becomes the average voltage of the electromotive force of two neighbors.Through a series of such operations, vision signal is written to all pixel capacitor Cpix of valid pixel and each that keeps among the capacitor Cst.Therefore, be in vision signal in each pixel and keep operating in the time period of (operation under the state that the pixel transistor Tr1 and the Tr2 of each pixel are in cut-off state), control capacitance device Ca becomes the average voltage with two neighbors.Suppose that liquid crystal indicator adopts the AC driving method; Then the electromotive force of the control capacitance device Ca of each pixel becomes the value with the electromotive force that on average approaches counter electrode; In the AC driving method, in leveled time section arbitrarily, be used for the polarity different (some counter-rotating or data line counter-rotatings) of electromotive force of the adjacent data line of counter electrode.
Though pixel transistor Tr1, Tr2 and Tr3 are the n transistor npn npns in the situation about having described before this, also can use the p transistor npn npn.In this case, the electromotive force of every gate line can become simply and makes the p type can conducting and the state of not conducting.In addition, about channel width W1～W3 (Figure 17) of Tr1, Tr2 and Tr3, the channel width W3 of Tr3 can be configured to less than the channel width W1 of Tr1, Tr2, W2.Reason is that it is exactly enough having the characteristic that writes control capacitance device Ca for Tr3, and the value of Ca can be less than pixel capacitor Cpix and the value that keeps capacitor Cst sum.
Employing can be suppressed to the fluctuation of the voltage in the retention time section of pixel capacitor Cpix and maintenance capacitor Cst very little according to liquid crystal indicator of the present invention.Therefore, can significantly reduce the flicker and crosstalk.In addition, can realize structure of the present invention through method with low technology cost.In addition, adopt structure of the present invention, numerical aperture is not basically by deterioration.Hereinafter its reason will be described.
When the method that is used for AC driving liquid crystal is used some counter-rotating or gate line counter-rotating; The pixel capacitor Cpix that is written to each pixel from vision signal and the point that keeps capacitor Cst were written to almost half of time period of the pixel capacitor Cpix of each pixel and the point that keeps capacitor Cst to next vision signal in, the vision signal that has opposed polarity with the polarity of the vision signal that is written to respective pixel that is used for counter electrode was written to the data line that is connected with this pixel.Yet; In liquid crystal indicator according to the present invention; Control capacitance device Ca is provided for the tie point between pixel Tr1, the Tr2, and is in the major part of the time period that keeps operation at Tr1 and Tr2, and the voltage that approaches the electromotive force of counter electrode is written among the control capacitance device Ca.Therefore, the source electrode-drain voltage Vds that is connected to pixel capacitor Cpix and the transistor Tr 2 that keeps capacitor Cst becomes with the electromotive force of data line irrelevant.In addition, the electromotive force of control capacitance device ca becomes the electromotive force that on average approaches counter electrode, makes that the size of Vds also can on average be dwindled.Therefore, can reduce the flicker and crosstalk.
When using the data line inversion driving, in each pixel of liquid crystal indicator, be written in the pixel of vision signal and in the last stage of a frame and be written in the pixel of vision signal at after-stage, influence is different.Be written in the last stage under the situation of pixel of vision signal, in the major part of frame time section, the polarity of the vision signal that is written to pixel that is used for counter electrode is identical with the polarity of the signal that is applied to data line that is used for counter electrode.Simultaneously, be written at after-stage under the situation of pixel of vision signal, in the major part of frame time section, the polarity of the vision signal that is written to pixel that is used for counter electrode is different with the polarity of the signal that is applied to data line that is used for counter electrode.Therefore, in traditional liquid crystal display device, be written in the pixel of vision signal in the last stage, the source electrode-drain voltage of pixel transistor is little, and leakage current also diminishes.Simultaneously, be written in the pixel of vision signal at after-stage, the long-pending voltage of the source electrode-leakage of pixel transistor is big, and leakage current also becomes big.Therefore, be written in the pixel of vision signal at after-stage, glimmering and crosstalking becomes extensively, makes in the plane of liquid crystal indicator, to be difficult to make flicker evenly.
Simultaneously, adopt liquid crystal indicator of the present invention, the source electrode-drain voltage Vds with pixel capacitor and the transistor Tr 2 that keeps capacitor to be connected of each pixel becomes uncorrelated with the data line electromotive force.Therefore, the electromotive force of control capacitance device Ca becomes the electromotive force that on average approaches counter electrode, the feasible size that can on average reduce Vds.Therefore, the last stage be written into vision signal pixel leakage current and be written at after-stage between the leakage current of pixel of vision signal and do not have difference.Therefore, can significantly reduce the flicker and crosstalk.
In addition, because the transistor of the enough same types of ability is configured to all crystals pipe of pixel.Therefore, compare with the situation of n transistor npn npn, can reduce the technology cost with using the p transistor npn npn simultaneously.In addition, except being used to control the gate line and data line of three transistor Tr 1～Tr3, in each pixel, any other control line need be provided.Therefore, deterioration that can numerical aperture is suppressed to minimum.
The 5th exemplary embodiment
Fig. 8 shows the circuit block diagram according to the 5th exemplary embodiment of picture element matrix of the present invention and liquid crystal indicator, the figure shows whole equivalent electrical circuit.Hereinafter, will be through scheming to furnish an explanation with reference to this.Identical reference number is applied to the device identical with the assembly of Fig. 5 and Fig. 6, and will omit the explanation to it.
According to the layout of pixel 60A and pixel 60B, the picture element matrix 71 of this exemplary embodiment is different with liquid crystal indicator 50 with the picture element matrix 51 of Fig. 5 and Fig. 6 with liquid crystal indicator 70.That is the paired mode of the control capacitance device Ca that, in two neighbor 60A and 60B, is connected through transistor Tr 3 is different.In exemplary embodiment shown in Figure 6, in pixel, the pixel that is provided with Tr3 is set in two adjacent data lines by the mode with biasing.Yet in the 5th exemplary embodiment, alternately setting has the pixel of Tr3.In addition, the 5th exemplary embodiment is identical with exemplary embodiment shown in Figure 6, and its method of operating is also identical.In addition, also can adopt the p transistor npn npn to construct Tr1, Tr2 and Tr3.
Employing can obtain the effect identical with the effect of liquid crystal indicator shown in Figure 6 according to the liquid crystal indicator of the 5th exemplary embodiment.In addition, the pixel that is provided with Tr3 is in flexible form (telescopic form), this means that the pixel through its numerical aperture change deterioration of Tr3 is set also is in flexible form.Therefore, can realize such effect, that is, can make because the luminance difference balance that the difference of numerical aperture causes.
The 6th exemplary embodiment
Fig. 9 A shows the circuit block diagram according to the 6th exemplary embodiment of picture element matrix of the present invention and liquid crystal indicator, and this figure is the equivalent electrical circuit of two pixels.Hereinafter, will be through scheming to furnish an explanation with reference to this.Identical reference number is applied to the device identical with the assembly of Fig. 5, and will omit the explanation to it.
In pixel 80A and 80B according to this exemplary embodiment, switching device 82A, 82B are different with the switching device of pixel 60A shown in Figure 5,60B.That is, not being both of the 6th embodiment is that Tr3 is provided for all pixel 80A and 80B.Under situation shown in Figure 5, the control capacitance device Ca of two neighbor 60A, 60B connects through single Tr3, yet in the 6th exemplary embodiment, control capacitance device Ca is connected through two transistors that offer pixel 80A and 80B respectively.In addition, the 6th exemplary embodiment is identical with exemplary embodiment shown in Figure 6, and its method of operating is also identical.And, also can adopt the p transistor npn npn to construct pixel transistor Tr1, Tr2 and Tr3.
Employing can realize the effect identical with the effect of liquid crystal indicator shown in Figure 6 according to the liquid crystal indicator of this exemplary embodiment.In addition, transistor Tr 3 is provided for all pixels, makes the mean value of numerical aperture of all pixels diminish.Yet, can make the numerical aperture of each pixel consistent.
The 7th exemplary embodiment
Fig. 9 B shows the circuit block diagram according to the 7th exemplary embodiment of picture element matrix of the present invention and liquid crystal indicator, and this figure is the equivalent electrical circuit of two pixels.Hereinafter, will be through scheming to furnish an explanation with reference to this.Identical reference number is applied to the device identical with the assembly of Fig. 5, and will omit the explanation to it.
In pixel 90A and 90B according to this exemplary embodiment, switching device 91A, 91B are different with the switching device of pixel 60A shown in Figure 5,60B.That is, be that close right side two pixel 90A adjacent one another are, the transistor of 90B in the left side what be used for connecting data line and liquid crystal capacitor, the transistor that is connected to the liquid crystal capacitor side has double grid (Tr2, Tr4) with the difference of structure shown in Figure 5.Described at this and to have adopted the n transistor npn npn to construct the situation of pixel transistor.Yet, also can adopt the p transistor npn npn to construct pixel transistor.
Identical according to the operation of the liquid crystal indicator of the 7th exemplary embodiment with the operation of liquid crystal indicator shown in Figure 6.Employing can obtain the effect identical with the effect of liquid crystal indicator shown in Figure 6 according to the liquid crystal indicator of the 7th exemplary embodiment.And because the transistor that is connected to pixel capacitor is formed the double-gated transistor with Tr2 and Tr4, so each transistorized source electrode-drain voltage is by dividing potential drop, thereby diminishes.Therefore, can further reduce leakage current.
The 8th exemplary embodiment
Figure 10 to Figure 15 is the example planimetric map that is used to make according to the method for the picture element matrix of first exemplary embodiment and liquid crystal indicator.Will be through furnishing an explanation with reference to these accompanying drawings.
In Figure 10 to Figure 15, pixel layout is shown through unit with main processing step.At first, on transparent substrates, form SiO such as glass, quartz or plastics 2Or the insulation film of SiN, form the semiconductor layer 101 of TFT above that, and carry out patterning.Figure 10 shows the pixel layout up to the operation stage of the patterning of accomplishing semiconductor layer 101.According to needs, semiconductor layer 101 is carried out such as PROCESS FOR TREATMENT such as annealing, doping impurity, hydrogenation and activation the optimised processing step of corresponding technology.
On semiconductor layer 101, form gate metal layer 102 and usefulness, for example, be arranged between it by SiO 2The thin dielectric film of processing forms pattern.Figure 11 shows the pixel layout after the patterning of accomplishing gate metal layer 102.By the double dot dash line shown in Tr1～Tr3 among the figure around part be part corresponding to the transistor Tr 1～Tr3 of each pixel 20 in picture element matrix shown in Fig. 1 and Fig. 2 11 and the liquid crystal indicator 10.Similarly, by the double dot dash line shown in Cst and the Ca around part be the part that keeps capacitor Cst and control capacitance device Ca with becoming.These capacitors are with the thin gate insulating film structure that is clipped between gate metal layer 102 and semiconductor layer 101, and the semiconductor layer 101 of these parts has the high concentration impurities of mixing in advance.As the metal that is used for grid, can use Wsi, Mo, Cr, Al etc. according to the maximum temperature of technology.
After this, form by SiO 2Deng the dielectric film of processing, and form the contact hole 103 that is electrically connected data line metal level (will describe subsequently) and semiconductor layer 101 or gate metal layer 102 in the position of necessity.Figure 12 shows this state.
After this, form data line metal level 104 and patterning.Figure 13 shows the pixel layout after the patterning of accomplishing data line metal level 104.Hope to use low resistive metal to be used for data line metal level 104 such as Al.On data line metal level 104, form SiO 2Or the insulation film of SiN.In addition, as required, form inorganic or organic patterned film above that.
Figure 14 shows the layout after the contact hole 105 that is formed for being electrically connected data line metal level 104 and pixel electrode metal level (will describe subsequently).
Figure 15 shows the pixel layout after the patterning of accomplishing pixel electrode metal level 106.Transparent electrode film is used for pixel electrode metal level 106.Its examples of material is ITO.
Pixel electrode metal level 106 must be electrically connected to the semiconductor layer 101 that forms TFT.In Figure 15, show the situation that connects pixel electrode metal level 106 and semiconductor layer 101 through data line metal level 104.Yet, can directly connect pixel electrode metal level 106 and semiconductor layer 101.
Example and main points of the present invention as the material that is used for dielectric film and metal film proposes are irrelevant, therefore also can use other material.Through above-mentioned steps, can make the TFT substrate of describing in first exemplary embodiment.Through lamination TFT substrate and above be formed with counter electrode relative substrate and through the TFT substrate and relatively the gap between the substrate insert liquid crystal and can make liquid crystal indicator.Here, the technology that has nothing to do with the present invention is not described basically, such as the technology of the blooming of the technology of the technology that is used to make liquid crystal aligning, laminated substrates and lamination such as polaroid.For these technology, can select to be suitable for the technology that liquid crystal indicator uses.In addition, also can adopt identical method to construct picture element matrix and liquid crystal indicator according to other exemplary embodiment.
The 9th exemplary embodiment
Figure 16 to Figure 21 is the example that is used to make according to the method for the picture element matrix of the 4th exemplary embodiment and liquid crystal indicator.Hereinafter, will be through furnishing an explanation with reference to these accompanying drawings.
In Figure 16 to Figure 21, the unit through main processing step illustrates pixel layout.At first, Figure 16 shows the pixel layout up to the operation stage of the patterning of accomplishing semiconductor layer 201.
Figure 17 shows the pixel layout after the patterning of accomplishing gate metal layer 202.Double dot dash line shown in Reference numeral Tr1～Tr3 in the accompanying drawings around part be part corresponding to pixel transistor Tr1～Tr3 of each the pixel 60A in the picture element matrix shown in Fig. 8 71 and the liquid crystal indicator 70,60B.Similarly, the double dot dash line shown in reference number C st and the Ca around part be the part that keeps capacitor Cst and control capacitance device Ca with becoming.
Figure 18 shows the layout after being formed for being electrically connected the contact hole 203 of data line metal level (will describe) and semiconductor layer 201 or gate metal layer 202.
Figure 19 shows the pixel layout after the patterning of accomplishing data line metal level 204.
Figure 20 shows the layout after the contact hole 205 that is formed for being electrically connected data line metal level 204 and pixel electrode metal level (will describe subsequently).
Figure 21 shows the pixel layout after the patterning of accomplishing pixel electrode metal level 206.
Through above-mentioned steps, can construct TFT substrate with structure of describing in the 4th exemplary embodiment.Through lamination TFT substrate and above be formed with counter electrode relative substrate and through the TFT substrate and relatively the gap between the substrate insert liquid crystal and can construct liquid crystal indicator.As for the material that is used for insulation film and metal film, for example, can use above-mentioned material.
Here, the technology that has nothing to do with the present invention is not described basically, such as the technology of the optical thin film of the technology of the technology that is used to make liquid crystal aligning, laminated substrates and lamination such as polaroid.For these technology, can select to be suitable for the technology that liquid crystal indicator uses.In addition, also can adopt picture element matrix and the liquid crystal indicator of identical method construct according to other exemplary embodiment.
Though illustrate and described the present invention, the invention is not restricted to these embodiment with reference to exemplary embodiment of the present invention.Those of ordinary skill in the art will be understood that, under the situation that does not break away from the spirit and scope of the present invention that are defined by the claims, can make the various variations on form and the details within the scope of the invention.

Claims (13)

1. liquid crystal indicator, said liquid crystal indicator comprise that each pixel has pixel electrode and is arranged near the point of crossing of many gate lines and many data lines by the picture element matrix of pixel structure, wherein,
Each pixel comprises:
First switching device; It has a plurality of transistor A that are connected in series; When said a plurality of transistor A when being set to conducting simultaneously by the first grid line options; Be used for and will be applied to said pixel electrode from the voltage of a supply of said many data lines, wherein said first grid polar curve is in said many gate lines; With
The second switch device; It has transistor B and capacitor; Be used for when transistor B when being configured to conducting by the second grid line options; The electromotive force of appointment is supplied with at least one in the tie point between said a plurality of transistor A and is stored in the said capacitor electromotive force of said appointment and not by said first grid polar curve and said second grid line options the time, in the electromotive force of said tie point at least one remained on the said capacitor between said a plurality of transistor A; Wherein said second grid line is in said many gate lines, but different with said first grid polar curve.
2. liquid crystal indicator as claimed in claim 1, wherein:
Each pixel comprises the public electrode of the electromotive force that is applied with said appointment; And
Transistor B is set to conducting when by said second grid line options, and through said public electrode being connected to said capacitor is supplied with electromotive force from said appointment to said capacitor.
3. liquid crystal indicator as claimed in claim 2, wherein:
Said first switching device comprises the first transistor and the transistor seconds as said a plurality of transistor A; The gate electrode of wherein said the first transistor and the gate electrode of said transistor seconds are connected to said first grid polar curve jointly; Source electrode or drain electrode that the source electrode of said the first transistor or drain electrode are connected to said transistor seconds; The said source electrode of said the first transistor and in the said drain electrode another are connected in the said data line, and the said source electrode of said transistor seconds and in the said drain electrode another are connected to said pixel electrode; And
Said second switch device comprises the 3rd transistor as said transistor B; Wherein said capacitor is connected between the tie point and said public electrode of said the first transistor and said transistor seconds; The said the 3rd transistorized gate electrode is connected to said second grid line; The said the 3rd transistorized source electrode or drain electrode are connected to tie point, and in the said the 3rd transistorized said source electrode and the said drain electrode another is connected to said public electrode.
4. liquid crystal indicator, said liquid crystal indicator comprise that each pixel has pixel electrode and is arranged near the point of crossing of many gate lines and many data lines by the picture element matrix of pixel structure, wherein,
Each pixel comprises first switching device; Said first switching device has a plurality of transistor A that are connected in series; When said a plurality of transistor A when being set to conducting simultaneously by the first grid line options; Be used for and will be applied to said pixel electrode from the voltage of a supply of said many data lines, wherein said first grid polar curve is in said many gate lines; And
Two paired neighbors on the said picture element matrix comprise at least one transistor B and a plurality of capacitor; The source electrode of said transistor B and drain electrode are connected between at least one tie point in the tie point of said a plurality of transistor A of at least one and another pixel in the tie point of said a plurality of transistor A of a pixel; And the gate electrode of said transistor B is connected to the second grid line; Wherein said second grid line is in said many gate lines one but different with said first grid polar curve; An end separately of said a plurality of capacitors is connected respectively to each in the said tie point of said a plurality of transistor A of each pixel that is connected with said transistor B, and the other end is connected to public electrode.
5. liquid crystal indicator as claimed in claim 4, wherein:
Each pixel comprises counter electrode, and said counter electrode is arranged in the identical substrate that is provided with said pixel electrode or is arranged in the independent substrate;
The liquid crystal of each pixel receives the electric field controls between said pixel electrode and the said counter electrode; And
In two pixels of at least one with said tie point between the said transistor A that connects through said transistor B; Its counter electrode has identical electromotive force, and it is different to be used for the polarity of signal of each pixel electrode of said two pixels of being applied to of counter electrode.
6. liquid crystal indicator as claimed in claim 4, wherein:
Said first switching device comprises the first transistor and the transistor seconds as said a plurality of transistor A; The gate electrode of wherein said the first transistor and said transistor seconds is connected to said first grid polar curve jointly; Source electrode or drain electrode that the source electrode of said the first transistor or drain electrode are connected to said transistor seconds; The said source electrode of said the first transistor and in the said drain electrode another are connected in the said data line, and the said source electrode of said transistor seconds and in the said drain electrode another are connected to said pixel electrode; And
The 3rd transistor that comprises as said transistor B in said two neighbors on the said picture element matrix; Wherein said capacitor is connected between the said tie point and said public electrode of said the first transistor and said transistor seconds; The said the 3rd transistorized gate electrode is connected to said second grid line; The said the 3rd transistorized source electrode or drain electrode are connected to the said the first transistor of a pixel and the tie point between the said transistor seconds, and another in the said the 3rd transistorized said source electrode and the said drain electrode is connected to the said the first transistor of another pixel and the tie point between the said transistor seconds.
7. liquid crystal indicator as claimed in claim 3, wherein, any in said at least the first transistor and the said transistor seconds is formed has a plurality of grids.
8. liquid crystal indicator as claimed in claim 6, wherein, any in said at least the first transistor and the said transistor seconds is formed has a plurality of grids.
9. liquid crystal indicator as claimed in claim 3, wherein, said the first transistor, said transistor seconds and said the 3rd transistor have identical conduction type.
10. liquid crystal indicator as claimed in claim 6, wherein, said the first transistor, said transistor seconds and said the 3rd transistor have identical conduction type.
11. liquid crystal indicator as claimed in claim 3; Wherein, Said public electrode is divided into first public electrode and second public electrode that does not have film to ring each other; Said capacitor is connected between said tie point and said first public electrode, and in the said the 3rd transistorized said source electrode and the said drain electrode another is connected to said second public electrode.
12. liquid crystal indicator as claimed in claim 3, wherein, the said the 3rd transistorized channel width is less than the channel width of said the first transistor and said transistor seconds.
13. liquid crystal indicator as claimed in claim 6, wherein, the said the 3rd transistorized channel width is less than the channel width of said the first transistor and said transistor seconds.
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