CN101330065B - Method for preparing convex point, low metallic layer of convex point and production method thereof - Google Patents
Method for preparing convex point, low metallic layer of convex point and production method thereof Download PDFInfo
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- CN101330065B CN101330065B CN2007100424600A CN200710042460A CN101330065B CN 101330065 B CN101330065 B CN 101330065B CN 2007100424600 A CN2007100424600 A CN 2007100424600A CN 200710042460 A CN200710042460 A CN 200710042460A CN 101330065 B CN101330065 B CN 101330065B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/0347—Manufacturing methods using a lift-off mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/036—Manufacturing methods by patterning a pre-deposited material
- H01L2224/0361—Physical or chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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Abstract
The invention discloses an under bump metal layer manufacturing method, which comprises the following steps: a wafer comprising a shielding layer is provided, and a first metal layer is formed on the shielding layer and a protective layer is formed on the first metal layer. The invention also discloses a bump manufacturing method which comprises the following steps: a wafer comprising under bump metal layer is provided, the under bump metal layer in sequence comprises a shielding layer, a first metal layer and a protective layer, and bumps are formed on the first metal layer. The under bump metal layer manufacturing method and the bump manufacturing method of the invention isolate the first metal layer by forming the protective layer on the first metal layer, so as to avoid that the chemical used in the process of removing photoresist reacts with the first metal layer to generate a film which affects the quality of the follow-up sealing process.
Description
Technical field
The present invention relates to encapsulation procedure, especially design convex point production method, ubm layer and manufacture method in the encapsulation procedure.
Background technology
Along with the continuous development of integrated circuit technique, electronic product more and more develops to miniaturization, intellectuality, high-performance and high reliability direction.And the integrated circuit encapsulation not only directly affects integrated circuit, electronic module and even machine performance, but also is restricting miniaturization, low cost and the reliability of whole electronic system.Progressively dwindle in the integrated circuit (IC) wafer size, under the situation that integrated level improves constantly, electronics industry to the proposition of integrated circuit encapsulation technology more and more higher requirement.
Flip chip (flip chip) technology is the soldered ball that forms by in wafer surface, the wafer upset is formed with base plate to be connected, thereby reduce package dimension, satisfy the high-performance (as high speed, high frequency, littler pin) of electronic product, the requirement of little profile, make product have good electric property and heat transfer property.
Stud bump making technology (bump) is a key technology in the flip chip.Salient point be scolder by certain process deposits on the wafer interconnect metal level, the metal soldered ball that reflux to form through uniform temperature.Before stud bump making, as shown in Figure 1, wafer 1 has been finished passivation layer 2 and interconnecting metal layer 3 technologies, enters after the stud bump making, need form a ubm layer 6 (Under-BumpMetallurgy in wafer surface; UBM), on ubm layer 6, form a photoresist layer then, and expose, develop to form required salient point pattern; Form the salient point scolder then, the technology that forms the salient point scolder comprises the metal mask evaporation, electroplates Bumping Technology, laser ball implanting technology, mould printing technology etc.; At last, remove photoresist layer and ubm layer 6, solder reflow forms soldered ball 4 at a certain temperature.
And, be also to have announced more methods in 200510015208.1 the Chinese patent application about stud bump making at for example application number.But in present stud bump making technology, find, after removing photoresist layer, on ubm layer, can find one deck reactant film, by finding wherein to contain organic components after the composition of analyzing this film, and the chemical reagent that uses in the process of removing photoresist also often contains organic components, therefore can judge it is in the process of removing photoresist layer, reaction has taken place with the chemical reagent of removing photoresist in metal level, and this layer reactant film can have a negative impact for follow-up reflux technique, causes the salient point quality to descend.
Summary of the invention
The present invention promptly be for solve in the prior art stud bump making technology remove photoresist layer after, can produce one deck reactant film, influence the salient point quality that follow-up reflux technique forms.
For addressing the above problem, the invention provides a kind of manufacture method of ubm layer, comprise the wafer that comprises screen is provided; On described screen, form the first metal layer, also be included in and form protective layer on the first metal layer.
Correspondingly, the present invention also provides a kind of ubm layer, comprises screen on the wafer and the first metal layer on the screen successively, also comprises the protective layer on the first metal layer.
Described screen is a titanium, and the thickness of described titanium is 500 to 3000 dusts.
Described the first metal layer is a copper, and the thickness of described copper is 2000 to 5000 dusts.
Described protective layer is a titanium, and the thickness of described titanium is 50 to 1000 dusts.
The method that forms described screen, the first metal layer and protective layer is sputter.
The present invention also provides a kind of convex point production method, comprises, the wafer that comprises ubm layer is provided, and described ubm layer comprises screen, the first metal layer and protective layer successively; On the first metal layer, form salient point.
The described method that forms salient point on protective layer comprises the following steps, forms photoresist layer on protective layer, also forms the photoresist opening by exposure and development; With the photoresist layer is mask, removes protective layer and exposes the first metal layer in the etching of photoresist aperture position; On the first metal layer of photoresist aperture position, form inculating crystal layer; On inculating crystal layer, form solder layer; Remove photoresist layer and ubm layer outside the solder layer overlay area; Reflux solder forms salient point.
Described screen is a titanium, and the thickness of described titanium is 500 to 3000 dusts.
Described the first metal layer is a copper, and the thickness of described copper is 2000 to 5000 dusts.
Described protective layer is a titanium, and the thickness of described titanium is 50 to 1000 dusts.
The method that forms described screen, the first metal layer and protective layer is sputter.
Compared with prior art; such scheme has the following advantages: such scheme ubm layer manufacture method and convex point production method are by forming layer protective layer on the first metal layer; completely cut off the first metal layer; thereby avoid the chemicals that in removing the process of photoresist, uses and the first metal layer to react exerting an influence the film of follow-up packaging technology quality, improved the salient point quality that reflux technique forms.
Description of drawings
Fig. 1 is a prior art stud bump making process schematic representation;
Fig. 2 is an embodiment of the invention ubm layer manufacture method flow chart;
Fig. 3 A to Fig. 3 C is an embodiment of the invention ubm layer manufacture method schematic diagram;
Fig. 4 is an embodiment of the invention convex point production method flow chart;
Fig. 5 A to Fig. 5 H is an embodiment of the invention convex point production method schematic diagram.
Embodiment
The essence of ubm layer manufacture method of the present invention and convex point production method is in the process that forms ubm layer, forms protective layer on the first metal layer, isolated the first metal layer.
Ubm layer manufacture method of the present invention and convex point production method are elaborated by preferred embodiment and make ubm layer manufacture method of the present invention and stud bump making clearer.
Embodiment 1
With reference to shown in Figure 2, the manufacture method of embodiment of the invention ubm layer comprises the steps,
Step s1 provides the wafer that comprises screen;
Step s2 forms the first metal layer on screen;
Step s3 forms protective layer on the first metal layer.
Shown in Fig. 2 and Fig. 3 A, interconnecting metal layer 11 and passivation layer 12 have been arranged on the wafer 10, on interconnecting metal layer 11 and passivation layer 12, form screen 13.The effect of screen is to keep good adhesion with interconnecting metal layer, and effectively stops the mutually counterdiffusion of convex point material with interconnecting metal layer and wafer silicon substrate.The material of described screen 13 is constituting of a kind of in titanium, chromium, the tungsten or they, and wherein more excellent screen is a titanium.The thickness of described screen is 500 to 3000 dusts, and wherein more excellent thickness is 1000 dusts.It is sputter that the method that forms described screen 13 can adopt the method for existing evaporation or sputter, wherein more excellent method.Certainly, the technology that forms described screen 13 is not limited in the method for described evaporation or sputter, according to those skilled in the art's common practise, all the method that is suitable for can be applied to the present invention, and the thickness of the screen that forms also is to decide according to the process requirements of reality.
Shown in Fig. 2 and Fig. 3 B, after the technology of having finished screen 13, next just need on screen 13, form the first metal layer 14.The effect of the first metal layer is to provide the Seed Layer of plating.The material of described the first metal layer 14 is constituting of a kind of in copper, aluminium, the nickel or they, and wherein more excellent the first metal layer is a copper.The thickness of described the first metal layer 14 is 2000 to 5000 dusts, and wherein more excellent thickness is 3000 to 4000 dusts.The method that forms described the first metal layer 14 can adopt the method for existing evaporation or sputter equally, and wherein more excellent method is sputter.Certainly, according to those skilled in the art's common practise, the method that forms copper is not limited only to sputtering method, and other methods that are suitable for all can be applicable to the present invention, and the thickness of the first metal layer 14 that forms also is to decide according to the process requirements of reality.
Shown in Fig. 2 and Fig. 3 C, after the technology of finishing the first metal layer 14, next just need on the first metal layer 14, form protective layer 15.The material of the protective layer 15 that the embodiment of the invention adopts is constituting of a kind of in titanium, tungsten, the chromium or they, and wherein more excellent is titanium.The thickness of described protective layer is 50 to 1000 dusts, and wherein more excellent thickness is 200 to 300 dusts.Thereby described protective layer can not react with the medicine of removing photoresist and protect the first metal layer in the technology of removing photoresist, and can not react with the scolder of follow-up formation salient point yet.It is sputter that the method that forms described protective layer can adopt the method for existing evaporation or sputter, wherein more excellent method.Certainly, according to those skilled in the art's common practise, the method that forms titanium is not limited only to sputtering method, and other methods that are suitable for all can be applicable to the present invention, and the thickness of the protective layer that forms also is to decide according to the process requirements of reality.
After having finished above-mentioned three step process; the technology of ubm layer has also just been finished, and shown in Fig. 3 C, the ubm layer of the embodiment of the invention comprises screen 13 on the wafer 10 and the first metal layer 14 on the screen 13; also comprise the protective layer 15 on the first metal layer 14.After the ubm layer technology of the embodiment of the invention was finished, protective layer 15 just can completely cut off the first metal layer 14, had avoided that the first metal layer 14 reacts the reactant film of the technology that exerts an influence with the chemicals of removing photoresist in the subsequent technique.
Embodiment 2
With reference to shown in Figure 4, embodiment of the invention convex point production method comprises the steps,
Step s101 provides the wafer that comprises ubm layer, and described ubm layer comprises screen, the first metal layer and protective layer successively;
Step s102 forms photoresist layer, also forms the photoresist opening by exposure and development on ubm layer;
Step s103 is a mask with the photoresist layer, removes protective layer and exposes the first metal layer in the etching of photoresist aperture position;
Step s104 forms inculating crystal layer on the first metal layer of photoresist aperture position;
Step s105 forms solder layer on inculating crystal layer;
Step s106 removes photoresist layer and the ubm layer outside the solder layer overlay area and exposes passivation layer;
Step s107, reflux solder forms salient point.
Shown in Fig. 4 and Fig. 5 A, interconnecting metal layer 101 and passivation layer 102 have been arranged on the wafer 100, on interconnecting metal layer 101 and passivation layer 102, at first form screen 103.The effect of screen is to keep good adhesion with interconnecting metal layer, and effectively stops the mutually counterdiffusion of convex point material with interconnecting metal layer and wafer silicon substrate.The material of described screen 103 is constituting of a kind of in titanium, chromium, the tungsten or they, and wherein more excellent screen is a titanium.The thickness of described screen is 500 to 3000 dusts, and wherein more excellent thickness is 1000 dusts.It is sputter that the method that forms described screen 103 can adopt the method for existing evaporation or sputter, wherein more excellent method.Certainly, the technology that forms described screen 103 is not limited in the method for described evaporation or sputter, according to those skilled in the art's common practise, all the method that is suitable for can be applied to the present invention, and the thickness of the screen that forms also is to decide according to the process requirements of reality.
Continuation after the technology of having finished screen 103, next just need form the first metal layer 104 in conjunction with shown in Fig. 4 and Fig. 5 A on screen 103.The effect of the first metal layer is to provide the Seed Layer of plating.The material of described the first metal layer 104 is constituting of a kind of in copper, aluminium, the nickel or they, and wherein more excellent the first metal layer is a copper.The thickness of described the first metal layer 104 is 2000 to 5000 dusts, and wherein more excellent thickness is 3000 to 4000 dusts.The method that forms described the first metal layer 104 can adopt the method for existing evaporation or sputter equally, and wherein more excellent method is sputter.Certainly, according to those skilled in the art's common practise, the method that forms copper is not limited only to sputtering method, and other methods that are suitable for all can be applicable to the present invention, and the thickness of the first metal layer 104 that forms also is to decide according to the process requirements of reality.
Continuation after the technology of finishing the first metal layer 104, next just need form protective layer 105 in conjunction with shown in Fig. 4 and Fig. 5 A on the first metal layer 104.The material of the protective layer 105 that the embodiment of the invention adopts is constituting of a kind of in titanium, tungsten, the chromium or they, and wherein more excellent is titanium.The thickness of described protective layer is 50 to 1000 dusts, and wherein more excellent thickness is 200 to 300 dusts.Thereby described protective layer can not react with the medicine of removing photoresist and protect the first metal layer in the technology of removing photoresist, and can not react with the scolder of follow-up formation salient point yet.It is sputter that the method that forms described protective layer can adopt the method for existing evaporation or sputter, wherein more excellent method.Certainly, according to those skilled in the art's common practise, the method that forms titanium is not limited only to sputtering method, and other methods that are suitable for all can be applicable to the present invention, and the thickness of the protective layer that forms also is to decide according to the process requirements of reality.
After having formed protective layer 105, ubm layer has also just been finished.
Shown in Fig. 4 and Fig. 5 B, after having finished ubm layer, just need on ubm layer, form photoresist layer, also form the photoresist opening by exposure and development.The method that forms photoresist layer generally can adopt spin-coating method.As a kind of implementation of the embodiment of the invention, the material of photoresist layer 106 is a dry film.And be exactly directly dry film to be attached on the protective layer 105 of ubm layer to get final product usually in the method that forms dry film on the ubm layer.And the not strict qualification of the thickness of dry film all is to decide according to the process requirements of reality usually.
Shown in Fig. 4 and Fig. 5 C, after forming photoresist layer 106, just need expose and develop for photoresist layer 106 forms photoresist opening 107.At first define the shape and the size of opening 107 by mask pattern, expose for photoresist layer 106 then, the normal light source that adopts has for example high-pressure mercury lamp, beam-plasma etc., after overexposure, the photoresist that is exposed the zone is that the photoresist of opening part dissolves, use developer flush away photoresist at last again, just can on photoresist layer 106, form opening 107.
Shown in Fig. 4 and Fig. 5 D, after forming opening 107, be mask with photoresist layer 106 with that, remove protective layer 105 in the 107 position etchings of photoresist opening, and expose the first metal layer 104.It is the methods that adopt wet etching that protective layer 105 is removed in etching, can adopt the method for spraying or soaking, and removes protective layer 105 with the acids chemical reagent.
Shown in Fig. 4 and Fig. 5 E, to remove protective layer 105 in etching, and after exposing the first metal layer 104, on the first metal layer 104 of photoresist opening 107 position correspondences, form inculating crystal layer 108, the material of inculating crystal layer 108 is that copper, nickel or its constitute.Form inculating crystal layer 108 and can adopt electric plating method, method with electro-coppering is exemplified below: wafer is soaked in the electroplate liquid of copper ions, wafer is connected to negative electrode, electroplate liquid is connected to anode, between negative electrode and anode, switch on then, make copper ion in the electroplate liquid deposit in the opening 107 of wafer surface by electric field action and finish electroplating process.The thickness of described inculating crystal layer is 3 to 10um.
Shown in Fig. 4 and Fig. 5 F, after having formed inculating crystal layer 108, just need on inculating crystal layer 108, form solder layer 109.Described solder layer is tin or terne metal.The method that forms solder layer 109 can adopt electric plating method.The thickness of described solder layer 109 is 50 to 300 μ m.
Shown in Fig. 4 and Fig. 5 G, after forming solder layer 109, just need to remove photoresist layer 106 and ubm layer outside solder layer 109 overlay areas, and expose passivation layer 102.Removing photoresist layer 106 used methods generally is to adopt dry process or wet processing or dry method and wet processing process combined.Dry process is that at high temperature aerating oxygen and photoresist reflection takes place decompose photoresist.And wet processing is to adopt chemical reagent flush away photoresist.The method that the embodiment of the invention adopts is to use compounded organic solvent to remove the wet processing of photoresist layer 106.Owing to had protective layer 105 to completely cut off the first metal layer 104, thereby after removing photoresist layer 106, also on the first metal layer 104, do not found the reactant film.And the method for removing ubm layer is to adopt the method for wet etching; remove remaining protective layer 105, the first metal layer 104 and the screen 103 of solder layer 109 overlay areas wafer surface in addition by the method for spraying acid solution or wafer is soaked in the acid solution, thereby expose passivation layer 102.
Shown in Fig. 4 and Fig. 5 H, the technology that solder reflow forms soldered ball can adopt following method, is coated with scaling powder on solder layer 109, and insulation refluxes in reflow ovens then, forms salient point 109a.Owing in the technology of removing photoresist layer 106, the reactant film do not occur, thereby the quality of reflux technique is improved also.
In sum; ubm layer manufacture method of the present invention and convex point production method are by forming layer protective layer on the first metal layer; completely cut off the first metal layer, thereby avoided the chemicals that in removing the process of photoresist, uses and the first metal layer to react exerting an influence the film of follow-up packaging technology quality.
Claims (11)
1. a convex point production method is characterized in that, comprise the following steps,
The wafer that comprises ubm layer is provided, and described ubm layer comprises the first metal layer on screen, the screen and the protective layer on the first metal layer, and described protective layer is a titanium;
On protective layer, form photoresist layer, also form the photoresist opening by exposure and development;
With the photoresist layer is mask, removes protective layer and exposes the first metal layer in the etching of photoresist aperture position;
On the first metal layer of photoresist aperture position, form salient point.
2. convex point production method as claimed in claim 1 is characterized in that, the described method that forms salient point on the first metal layer of photoresist aperture position comprises the following steps, forms inculating crystal layer on the first metal layer of photoresist aperture position; On inculating crystal layer, form solder layer; Remove photoresist layer and ubm layer outside the solder layer overlay area; Reflux solder forms salient point.
3. convex point production method as claimed in claim 1 is characterized in that, described screen is a titanium.
4. convex point production method as claimed in claim 3 is characterized in that, the thickness of the titanium of described screen is 500 to 3000 dusts.
5. convex point production method as claimed in claim 4 is characterized in that, the thickness of the titanium of described screen is 1000 dusts.
6. convex point production method as claimed in claim 1 is characterized in that, described the first metal layer is a copper.
7. convex point production method as claimed in claim 6 is characterized in that, the thickness of described copper is 2000 to 5000 dusts.
8. convex point production method as claimed in claim 7 is characterized in that, the thickness of described copper is 3000 to 4000 dusts.
9. convex point production method as claimed in claim 1 is characterized in that, the thickness of described titanium is 50 to 1000 dusts.
10. convex point production method as claimed in claim 9 is characterized in that, the thickness of described titanium is 200 to 300 dusts.
11., it is characterized in that the method that forms described screen, the first metal layer and protective layer is sputter as each described convex point production method of claim 1 to 10.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100424600A CN101330065B (en) | 2007-06-22 | 2007-06-22 | Method for preparing convex point, low metallic layer of convex point and production method thereof |
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| CN2007100424600A CN101330065B (en) | 2007-06-22 | 2007-06-22 | Method for preparing convex point, low metallic layer of convex point and production method thereof |
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| CN101330065A CN101330065A (en) | 2008-12-24 |
| CN101330065B true CN101330065B (en) | 2010-08-18 |
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| CN101847592B (en) * | 2010-04-09 | 2011-11-30 | 中国科学院上海微系统与信息技术研究所 | Indium welded ball array preparing method based on electroplating technology |
| US8389397B2 (en) * | 2010-09-14 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing UBM undercut in metal bump structures |
| CN102064120B (en) * | 2010-10-22 | 2012-02-15 | 中国科学院上海微系统与信息技术研究所 | Soldering flux-free reflow technological method based on indium bumps |
| CN103809103B (en) * | 2012-11-08 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | Chip failpoint positioning method |
| US11682640B2 (en) * | 2020-11-24 | 2023-06-20 | International Business Machines Corporation | Protective surface layer on under bump metallurgy for solder joining |
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