CN101326613A - Middling pressure plasma system for removing surface layer without losing substrate - Google Patents
Middling pressure plasma system for removing surface layer without losing substrate Download PDFInfo
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- CN101326613A CN101326613A CNA2005800522585A CN200580052258A CN101326613A CN 101326613 A CN101326613 A CN 101326613A CN A2005800522585 A CNA2005800522585 A CN A2005800522585A CN 200580052258 A CN200580052258 A CN 200580052258A CN 101326613 A CN101326613 A CN 101326613A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3346—Selectivity
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Abstract
A system and method for removing photoresist or other organic compounds from semiconductor wafers is provided. Non-fluorinated reactant gases (O2, H2, H2O, N2 etc.) are activated in a quartz tube by a medium pressure surface wave discharge. As the plasma jet impinges on a substrate, volatile reaction products (H2O, CO2, or low molecular weight hydrocarbons) selectively remove the photoresist from the surface. The medium pressure also enables high gas temperatures that provide an effective source of heat in the reactive zone on the wafer that enhances etch rates and provides a practical means of removing ion implanted photoresist.
Description
Cross reference with related application
The present invention has required the priority of the 12/06/2004 U.S. Provisional Application No 60/633,673 that submits to according to 35 U.S.C § 119 (e).
Technical field
Relate generally to semiconductor processes of the present invention, and relate in the integrated circuit manufacturing workpiece from for example semiconductor wafer especially and optionally remove superficial layer.Though will be appreciated that following argumentation at semiconductor fabrication, the present invention can be applied to multiple manufacture process and equipment, therefore make the present invention should not be limited to the semiconductor manufacturing.
Background technology
Photoresist mask defines every layer of integrated circuit (IC), be used for insulation, P or the doping of N trap, threshold voltage adjustments and source-leakage contact from the implantation of FEOL (FEOL) ion, to back-end process (BEOL) plasma etching or metal plating and interlayer dielectric etching.After having formed every layer in the semiconductor device, these coatings must be removed effectively and fully.In this regard, resist is removed and can differently be described as the resist ashing, resist is peeled off or the resist etching.Though this discussion will be carried out the multiple reference to " etching ", but will be appreciated that, in the context of the present invention, term " etching " is used in reference to ashing generally, peels off or etching, and can refer to that when appropriate multiple other the meaning is the process that superficial layer is removed.At present, utilizing downstream plasma generation equipment is the industrial standard that is used to remove resist.In this solution, general non-reactive gas, for example O
2Flow through microwave or radio frequency discharge, wherein be translated into plasma, plasma confinement is the mixture of excited molecule, atomic group, ion and electronics.Charged species in plasma can recombinant when they flow through the downstream distribution system.Yet many atomic groups may have the life-span of abundant length to reach wafer.For the example that uses oxygen as flowing gas, single sigma metastable state oxygen molecule may continue to exist and final and wafer surface interaction (J.T.Jeong etc., Plasma Sources Sci.Technol.7,282-285,1998).High-energy ion bombardment may cause to the parts of semiconductor device or to harmful damage of wafer substrate self.Therefore, do not exist charged particle can prevent that the electricity to integrated circuit (IC) damages in downstream ashing instrument.
Before this specification provides in semiconductor fabrication the plasma source of original novelty based on the surface duct discharge technology.The enforcement of previous plasma system has used the electromagnetic power source to come activate plasma gas, for example by the Surfaguide device of people such as Moisson exploitation people such as (, IEEE Trans.Plasma Sci., PS-12,203-214,1984) Moisson.Yet the limited cooling effectiveness of this equipment has effectively limited the power density of consequent plasma.The previous plasma source of having implemented oil cooling usually.Yet, relate to very high temperature with the high-energy operate plasma.Cold oil decomposes under these conditions, thereby has deposited carburization zone on the outside of the wall of the plasma discharge tube in waveguide.In case initialization is then promptly grown along with the increase of microwave exposure based on the carbon-coating of oil; Finally, the catastrophic starting the arc and damaged plasma discharge tube has taken place in waveguide.Therefore, the oil cooling system is not suitable for the energetic plasma discharge.Reported air cooled high power plasma system, but their operation is limited to atmospheric pressure, promptly be limited in the high pressure conditions, make consequent plasma will not comprise for optionally removing for example required reactive kind (Y.Okamoto of organic superficial layer of photoresist, High-Power Microwave-Induced Helium Plasma At Atmospheric Pressure For DeterminationOf Halogens In Aqueous Solution, Jap.Journ.Appl.Phys.38, L 338,1999).
Typically, wafer is heated to improve the reaction speed during the downstream plasma ashing.Can be based on O at the application time of the process of the routine of the resist layer that is used for non-implantation
2Plasma chemical reaction in the time of 270 ℃, be low to moderate 15 seconds.In case resist layer is subjected to ion and implants, for example, then use the reaction mechanism of plasma to become more complicated for the requirement of middle IC manufacturing step institute.The removal of the resist of implanting ions is more much more difficult than the removal of the resist of implanting ions not, because implantation process has produced the shell of the carbonization that mixes with metal ion, it has extremely low intrinsic etching speed, (people such as G K.Vinogradova, J.Vac.Sci.Technol.B, 17,1, Jan/Feb 1999; People .Nucl.Instrum.Methods B39 such as S Fujimura, 1989, pp.809; People such as KJOrvek, Nucl.Instrum.Methods B7/8,1985, P501; People such as T.Bausum, " Stripping High-Dose Implanted Resist for300mm Production, " Semiconductor International, 06/01/2003; People such as J.R.Wasson, " Ion Absorbing Stencil Mask Coatings For IonBeam Lithography, " J.Vac.Sci.Tcchnol.B, 15,2214,1997).The output of handling further since chip temperature must remain be lower than about 120 ℃ to prevent that the particle ejection from reducing, this particle sprays may be mainly NH at shell
3The down blast and taking place of pressure of gas, it disengages in response to being heated to more than the hard roasting temperature.This phenomenon is known as explosion, (people such as D.Fleming, Manufacturing Improvements Realized throughan Optimized pre-Implant UV/Bake Process, Future FabInternational, 4,1,1977, p177).Different with graphite or photoresist, the resist film of implanting ions is inertia basically; They do not adsorb oxygen, nitrogen or steam in the atmosphere.Be used to make the resist film of implanting ions and activation energy that elemental oxygen reacts to be reported as 2.4eV, the resist of not implanting then is 0.17eV as a comparison, (people such as A.Joshi, J.Vac.Sci.Technol.A, 8,3, May/June 1990, pp.2137).This additional activation energy has explained that why the resist film of implanting ions basically can not etching in the downstream plasma of routine.In addition, rf bias and fluorine chemistry reaction have been used to improve the etching speed of the film that is used for implanting ions, (KJ Orvek and C Huffman, Nucl.Instrum.Methods B7/8 (1985) P501; People such as JI.McOmber, Nucl.Instrum.MethodsB74 (1993) pp.266-270; People such as K.Reinhardt, IBM TechnicalSymposium, France October 1999).Yet these have more invasive removal method and always cause the not corrosion to a certain degree on protection surface.Such loss on wafer surface becomes unacceptable day by day economically, because along with each IC of new generation, gate oxide and thickness of contact continue to dwindle.
Therefore, have the great demand for new etching example, it can be removed the photoresist layer of implanting ions and have basically well selectivity above silicon dioxide, silicon or other thin dielectric films, and reacts completely irrelevant with fluorine chemistry.Also exist for new technology requirement, it provides the removal speed of viable commercial and has kept the low substrate temperature that can be applied on the material that is coated with inorganic or organic material (comprising superficial layer implantation or that do not implant) simultaneously.
Summary of the invention
The present invention is by being provided for solving aforementioned need from the new solution of semiconductor wafer removal superficial layer.The invention provides a kind of method, wherein come activating reaction agent gas by the middle pressure surface wave discharge.Method further relates to form volatile reactant in plasma gas, and this volatile reactant can be peeled off photoresist from wafer surface.Plasma gas has formed and has impacted at on-chip reactive plasma jet, from the substrate optionally and therefore safely with high efficiency etch table surface layer.This method is carried out in the mode in viable commercial, with the material that is used for peeling off on it to be applied by the wafer in scanning jet the place ahead.
Especially, feature of the present invention usually is a kind of equipment that is used for optionally removing from workpiece in manufacture process superficial layer, and wherein equipment comprises process chamber; The plasma applicator; And cooling system.Process chamber defines inferior atmospheric environment to be used to receive pending workpiece, makes and can remove superficial layer.This plasma applicator produces plasma, and comprise the pressurized supply that reactant is handled gas, handle plasma discharge tube that the pressurized supply fluid of gas is communicated with reactant, be used to guide electromagnetic power to plasma discharge tube with the electromagnetic power source that generates plasma within it be positioned at the plasma discharge tube end and sentence the direction that is used for to this workpiece the indoor nozzle opening of processing is arrived in this plasma gas blowing.At last, cooling system comprises substantially around plasma discharge tube and therefore to have formed the cooling duct around plasma discharge tube to be used for the pipeline by its circulation gaseous coolant.
Embodiments of the invention provide at the equipment that carries out middle pressure (between about 10 holders and about 500 holders) plasma material removal on the semiconductor wafer as being used for.This equipment provides system, wherein O for example
2, H
2, H
2O, N
2Can flow through the narrow discharge tube that forms by quartzy, sapphire or the insensitive material of other electromagnetism etc. reactant gas, and wherein can use the surface wave activation that the electromagnetic power source by for example microwave or radio frequency power source is produced.In addition, provide the cooling system that is used for discharge tube that uses gaseous coolant, cooling system further comprises the integral type cooling flange on the be attached to cooling duct on the discharge tube.This equipment can further comprise discharge nozzle, by this discharge nozzle and impact on substrate, makes for example H that is caused from the gas of pipe
2O, CO
2Or the volatile reaction product of low-molecular-weight hydrocarbon release liner layer on the substrate wafer surface optionally.This equipment can further comprise the navigation system that is used for the supporting wafer chuck, and this wafer chuck provides the heating and the location of wafer, and the wafer high-velocity scanning of using plasma source is provided.
The advantage of using the uniqueness of surface wave discharge is the discharge that can guide its wafer from the point that applies exciting power to use.Simultaneously, provide the method for surface wave discharge on big pressure limit, to carry out and change the electromagnetic power system indistinctively.
Desirable operating pressure scope of the present invention is in the middle pressure state (greater than about 10 holders, but holds in the palm less than about 500).The middle pressure plasma has the advantage of very high electron-ion recombinant rate, and the energy particle thermalization can be eliminated the high energy charged species that exists in the low pressure plasma.Having eliminated these high energy kinds has then eliminated and has damaged the electric current of substrate and the possibility of sputter erosion potentially.Further, the plasma gas temperature that is in the middle pressure state is compared high with low pressure plasma.Provide extra thermal source in the higher reaction zone of plasma gas temperature on wafer, particularly required most the thermal source part.The heat energy of this gathering is removed the reactivity of organic material positive contribution, and wherein the reaction speed of material removal is increased, and has therefore increased processing speed (and coml feasibility).Relatively, may not wish to use low pressure (less than about 10 holders),, make that therefore " spot size " is more uncontrollable because pressure reduces the then geometry possibility abduction of plasma jet for this plasma fluidic system.The use of high pressure (greater than about 500 holders) may not be favourable, because therefore the required reactive kind recombinant before arriving wafer of surface removal has reduced the plasma validity that is used for the high selectivity removal.Yet the operation of the present invention in the pressure limit of broadness can realize that the wafer in the atmosphere exchanges, and plasma source still moves.Generally need low-pressure (near 1 holder) because light plasma, so, then can avoid this processing pressure is circulated if can during wafer exchanges, power source be maintained about 760 holders (atmospheric pressure).This can be avoided must vacuum suction reducing the pressure that is used for plasma ignition in addition, and be pressurized to the middle pressure that is used to handle each semiconductor wafer again then, therefore further saves the valuable processing time in industry is set.
More than describe and summarized feature of the present invention and technological merit quite widely, to understand detailed description of the present invention hereinafter better.Additional features of the present invention and advantage will be described below, and this has formed the theme of claim of the present invention.
Description of drawings
For understanding the present invention and advantage thereof more completely, in conjunction with the accompanying drawings with reference to following description, each figure is now:
Fig. 1 illustrates the sectional view of plasma removal system according to an embodiment of the invention;
Fig. 2 moves the photo that plasma is removed system according to an embodiment of the invention;
Fig. 3 to Fig. 7 illustrates the empirical data of collecting in an embodiment of the present invention;
Fig. 8 schematically illustrates scan pattern in an embodiment of the present invention;
Fig. 9 schematically illustrates hot-fluid in an embodiment of the present invention;
Figure 10 to Figure 17 is to use the microphoto of the sample of embodiments of the invention processing; With
Figure 18 to Figure 19 illustrates the method step in the flow chart form of embodiments of the invention.
Embodiment
In following explanation, illustrated for example many specific detail such as particular procedure value or parameter, understand completely of the present invention to provide.Yet, for persons skilled in the art obvious be not have carrying out the present invention under such specific detail.In other situation, the parts of knowing illustrate with block diagram form, in order to avoid unnecessary details makes the present invention ambiguous.For most of, the details that relates to specific semiconductor product application etc. is omitted, because it is unwanted that such details obtains thorough understanding of the present invention for the association area those skilled in the art, and in association area those skilled in the art's technical scope.
With reference now to accompanying drawing,, wherein the element of being described is not shown to scale not essentially, and wherein identical the or like in several accompanying drawings with same reference numerals.
Fig. 1 illustrates schematically showing of plasma applicator 101, process chamber 102 and high speed wafer scan platform 103.Plasma applicator 101 can be installed on the locular wall 104 of the semiconductor processes instrument that comprises process chamber 102, and wherein the chamber defines to be used to handle and wherein wishes to remove the wafer of superficial layer or the inferior atmospheric environment of any other workpiece.The electromagnetic power source connects slit 110 with power 105 by the thin-walled in the part of the height reduction of waveguide 111 and is fed to plasma discharge tube 106.In one embodiment, the microwave power of 2.45GHz is applied to the quartzy plasma discharge tube of 6mm diameter.Though send surface wave along the interface between plasma discharge tube 106 and the plasma 108 on both direction, the directed flow 112 of processing gas 114 has suppressed the discharge on the upstream side of waveguide 111 effectively.Identical flowing 112 combines with the downstream surface ripple and to have produced plasma jet 108, and this jet 108 is from the interior nozzle opening 119 of base flange 118, and base flange 118 is attached to plasma discharge tube 106.In this context, plasma jet refers to the pressurization plasma gas flow from plasma applicator 101.In an example, the processing gas percussion that plasma jet causes activating is on the semiconductor wafer of 2mm distance.In another example, the distance of wafer distance plasma jet is big to about 20mm.
High speed wafer scan platform comprises the chuck 130 that has the wafer retainer that has clamped wafer.The wafer retainer can move by vacuum power, chamber pressure or static.The wafer retainer can be with heat conduction or adiabatic material contact wafer, and this depends on the degree of the contact conductane that wafer is wished.In an example, between wafer and wafer retainer, introduce insulation material layer, to reduce contact conductane, therefore pass through to stop the dissipation of heat and the temperature of rising wafer.On the contrary, in an example, between wafer and wafer retainer, introduce the material layer of heat conduction, to increase contact conductane, therefore by promoting that the dissipation of heat reduces chip temperature.Further, chuck 130 can be connected to power source with heated chip by connector 133, or is connected to by connector 132 and initiatively cools off supply source (for example water), to be used to cool off wafer.Chuck also can be equipped with thermocouple sensor or other temperature sensors by connector 135, to be used to monitor the temperature of chuck.
Chuck and wafer retainer can be installed on the mechanical navigation system to be used to scan wafer.On this aspect, the scanning wafer refers to dynamically positions wafer, impacts wafer by plasma jet simultaneously, is exposed to plasma treatment with the zone with wafer.Exposure by scanning can be uniformly on the whole zone on the wafer, maybe can relate to optionally handle wafer part to be subjected to the different exposure level of plasma.In Fig. 1, illustrate twin shaft quadrature navigation system in the exemplary embodiment, comprise X-axis Linear actuator 136 and Y-axis Linear actuator 134.Other structures that are used for mechanical positioning have for example been installed and have been had the polar coordinates equipment that is installed in the rotating shaft on the Linear actuator radially, also can carry out in the present invention.In an example, mechanical navigation system comprises the translation stage of the motor driven of two quadratures, and they have the acceleration that surpasses 2.5 times of acceleration of gravity, and has the sweep speed greater than 100cm/s.In one embodiment, the present invention can carry out scan pattern under computer control, makes pass through in the area of coverage of jet at every of wafer, and the diameter of the described area of coverage equals half maximum overall with of the lateral plasma body jet profile of about etching track.In a specific example, the present invention can carry out scan pattern under computer control, thus the etching speed that on the edge of wafer, provides lower sweep speed to reduce owing to edge effect with increase chip temperature and compensation.
The present invention has utilized the cooling system that uses gaseous coolant.The high-speed gas that flows on the direction 113 relative with plasma gas 114 is used to cool off plasma discharge tube, makes that thus plasma applicator 101 can be with much higher power dissipation operation.In an example, the dry air or the nitrogen coolant gas that are limited by concentric outerhose 116 have cooled off plasma discharge tube 106.As shown in Figure 1, plasma discharge tube 106 has merged whole base flange 118 so that be installed to the applicator main body.The important function of base flange 118 is that O type circle seal 140 is removed from being directly adjacent to plasma discharge tube 106, and this plasma discharge tube 106 may be very hot.O type circle seal 140 has relatively low fusing point, and may be subjected to the destruction of excessive heat load easily.To melt inevitably with the O type circle that the downstream of plasma discharge tube 106 directly contacts.The structure of cooling system of the present invention and design provide the enough big temperature gradient that strides across base flange 118, make plasma from the heat of the central nozzle 119 of base flange 118 not cause the degeneration of the O type circle seal 140 on the edge of base flange 118.In the embodiment of an example, the spacer 142 of aluminium separates discharge tube flange 118 and the outer corresponding cooling flange 117 that cools off on the pipeline 116.The embodiments of the invention of describing in Fig. 1 depend on the coaxial cross-sectional geometry of the circular concentric of cooling system.Other cross-sectional geometry of the plasma discharge tube that is centered on by cooling pipe can be carried out within the scope of the invention, for example rectangle, square, avette or arranged off-centre.The multiple cooling system of liquid or gaseous coolant that utilizes also can be implemented in an embodiment of the present invention, and they provide the identical power scheme of cooling performance to realize carrying out in the present invention.
The trap 120 of Pipe Flange below was to eliminate electromagnetic power to handling indoor leakage in the present invention may further include and is incorporated in.In an example, used based on
1/
4The microwave trap of λBian Huan device.Gaseous coolant can be radially inwardly flows through passage in the lower surface of trap 120 towards plasma discharge tube 106, and enters the narrow space between plasma discharge tube and the external refrigeration pipeline 116.Coolant gas its speed when entering this zone increases substantially, because flow section is lowered.The result is the cooling that significantly improves of article on plasma body discharge tube 106, particularly in the very hot district in waveguide 110.In one exemplary embodiment, the wide gap of the 1mm between plasma discharge tube and cooling pipe causes coolant gas speed near Mach number 1, therefore can keep the high microwave power level near 2.5kW continuously.Different with the oil base cooling system, deposit is not left in air cooling of the present invention on discharge tube, even and do not cause the damage of article on plasma body discharge tube after operation prolongation, continuous of plasma jet with high power levels yet.
Fig. 2 is the photo that the operation plasma in the embodiments of the invention is removed system.The length of visible plasma jet is approximately 20cm, and is luminous.The processing gas that uses in this exemplary embodiment is that ratio is about 9: 1 reactive O shown in figure 2
2: N
2Mixture, wherein with the flow of about 2slpm supply with about 80 the holder pressure.Electromagnetic discharge power is approximately 1kW.
The thermal power of plasma jet provides the ability of localized heating wafer, has therefore increased etching speed by increasing reaction speed, carries reactive species to supply with the etching reaction of organic superficial layer simultaneously.Determine by following formula for the rising speed dT/dt of time t from impacting total thermal power P that plasma jet is transported to substrate is placed on the thermal insulation of jet below by measurement the temperature T of aluminium block:
P＝CρV(dT/dt)
Wherein thermal capacitance is C=0.9J/Kg, and density is ρ=2.7g/cm
3, and volume is V=104.04cm
3Measurement result illustrates in the datagram of Fig. 3, the figure shows the relation for the temperature and time of adiabatic aluminium block.In this example, by the O that supplies with the flow of 80 pressure that hold in the palm and 3slpm
2: N
2=9: 1 reacting gas heats piece, and the microwave power that applies 1.8kW is to cause the plasma jet that impacts in the distance of distance aluminium block 3cm, and the initial temperature of aluminium block is 25 ℃.The curve chart of Fig. 3 shows the linear relationship between the temperature and time, and wherein dT/dt is the slope of line.In this example, total thermal power is P=312W.This measurement can repeat under different microwave powers, gas componant and substrate distance, to verify the hot property of raising of the present invention.
Fig. 4 illustrate additionally with the identical treatment conditions of the example shown in Fig. 3 under plasma jet power with respect to the datagram of the measurement of the microwave power that applies.As shown in Figure 4, plasma jet power depends on microwave power linearly.In this example, when when nozzle opening 119 measurement target (semiconductor wafer) are separated 0.9cm and 2.9cm with plasma source respectively, conversion efficiency is approximately 19% and 21%, arrives as the slope measurement of the linear difference by measurement data points.
Fig. 5 illustrate additionally with the identical treatment conditions of the example shown in Fig. 3 under plasma jet power with respect to the measurement data figure of the distance of distance plasma source.As shown in fig. 5, when the distance in distance source when about 1cm is increased to about 5cm, jet power reduces.This may be by with process chamber 102 in the result of the cooling that mixes the plasma jet that causes of ambient temperature gas.
Fig. 6 illustrate additionally with the identical treatment conditions of the example shown in Fig. 3 under at the plasma jet power at the target range place of distance plasma source 2.9cm with respect to O
2The measurement data figure of concentration.Fig. 6 shows the O with about 20% to about 90%
2The relatively constant plasma jet power of concentration.This result show plasma jet power basically with O
2/ N
2Gas composition is irrelevant.
Fig. 7 illustrates the datagram of contact conductane with respect to the measurement in the space between wafer and the chuck.Can determine the success of ashing treatment in ability by plasma jet scan period control wafer temperature under dynamic condition.The control wafer temperature is retrained by the contact conductane between wafer and the chuck (K).Measure the K value for the multiple gap between wafer and the chuck by determining the steady temperature that is installed in the aluminium block on the constant temperature chuck.Keep with thin mica spacer at interval between piece and the chuck.The K value provides by following formula:
K＝A(T-T
0)/P
Wherein, A is the contact area between piece and the chuck, T
0Be chuck temperature, and P is a power.When chuck and piece were in tight the contact, the measured value of the thermal conductance that obtains was K=55mW/cm
2K, the value of this and other report meets well.As shown in Figure 8, thermal conductance significantly reduces along with the increase in the gap between wafer and the chuck.The timeconstant that is used for the heat transmission between chuck and wafer is provided by following formula:
τ＝C/K
Wherein C is the per unit area thermal capacitance of wafer.For the silicon wafer of 300mm, the time constant is approximately 2 seconds when closely contacting with chuck, for 0.01 " the gap, increase to about 10 seconds.Contact conductane and therefore the strong variation of time constant require point-device clearance control, this means wafer static on chuck to be clamped or vacuum clamps.Therefore, the present invention that can move in the middle pressure state is can allow to use the vacuum of wafer on chuck to clamp but not require static to clamp with respect to another benefit of the low-pressure system of routine.
For fully removing resist, wafer can be with grating pattern 1014 scannings of wriggling, as shown in Figure 8.In Fig. 8, along the line sweep 104 of x axle 1010 between the short translation track spacing of y axle 1012 (promptly along) on each direction with respect to semiconductor wafer 1016 alternately.For such pattern, track spacing can be less than the diameter of jet, so that the uniform etching outline that strides across wafer to be provided.In one exemplary embodiment of the present invention, track spacing is set at 0.7cm.For the track spacing of 0.7cm, the variation of the etch depth between the mid point between track center and the track is less than 2% of initial resist thickness.
Use the heat treatment that relates in the photoresist removal of scan plasma jet 1521 in Fig. 9, to illustrate in an embodiment of the present invention.Plasma jet 1521 scans above the semiconductor wafer substrate 1530 of the superficial layer 1531 that is coated with organic resist.When at full speed on x direction 1511, scanning wafer, the high-octane plasma jet 1521 that has under middle pressure on the direction 1523 of wafer 1530 from plasma source 1520 has caused the track 1522 that heats, this track 1522 is cooled off by the heat conduction by wafer on side direction, and passes through to for example contact conductane cooling of the wafer retainer of chuck on vertical.Relevant hot-fluid, i.e. F
Lateral1524 and F
Vertical1526 correspond respectively to side direction hot-fluid and vertical conduction.
Can heated chuck to increase the resist etch-rate on the wafer.The too much heat that chuck also can dissipate and be applied by plasma jet.The heat of jet is promptly by wafer diffusion, even for the highest sweep speed, corresponding to the diffusion length of the residence time of jet also greater than the thickness of wafer.In an example of the present invention, at about 0.2 to 0.4 second track scanning time durations, sideways diffusion length is 0.5cm only, has increased the width that is heated the district about 50%.Therefore, with regard to first was similar to, high-velocity scanning can be understood to be in and be equivalent to the line heater that moved wafer on the y direction 1510 perpendicular to this high-velocity scanning direction on the thermodynamics.In an example, vertical heat flow is the slow process that has 2 to 10 seconds time constant for silicon chip, and can ignore during the single track required time of scanning.Yet, can exist wherein after scanning several tracks vertical heat flow to become the situation of important hot factor.
Balance between jet power, sweep speed and the vertical heat flow can be determined the effectiveness of specific ashing treatment.In order to maximize output, embodiments of the invention use high-level electromagnetic power operation, and to activate this plasma jet, this directly is converted to higher etching speed.The power that increases has also maximized the generation of the reactant gas in the plasma, and the heat that is used to activate the ashing reaction between resist and the etching gas is provided.
In the situation of the resist of implanting ions, initial chuck temperature can be set to the hard roasting temperature that just is lower than resist.In an example, initial chuck temperature is set to about hard 10 ℃ of the temperature of baking that are lower than resist, and this roasting firmly temperature can be approximately 125 ℃.Resist is stable under this temperature and the explosion phenomenon can not takes place.Contact conductane between wafer and the chuck can be maximized, and for example, for given input power density, can utilize the helium dorsal part type of cooling to come the minimum wafer temperature.At last, can increase sweep speed, the effective power density in this wafer is reduced to the point that can unrestrictedly scan this wafer and not have the explosion phenomenon with this.Required speed can be significantly greater than 1 meter per second.Along with scanning is carried out, chip temperature progressively rises and this scan plasma jet causes small hole in the photoresist shell of having implanted, the feasible gas-permeable shell that is discharged by the substrate resist.In case the realization permeability then can allow this temperature to raise by the contact conductane that reduces sweep speed or reduce between wafer retainer and the chuck, has therefore reduced the heat that dissipates by the wafer retainer.The result who is used to permeate the scan process in advance of photoresist shell can remove resist from wafer surface apace during secondary scan operation.
The resist that etching is not implanted relates to less thermal confinement; Initial chuck temperature can be higher, is about 200-350 ℃ in an example, and contact conductane and sweep speed can set much lowerly, and this all causes higher chip temperature, and therefore causes higher etching speed.In the situation of the resist of not implanting, contact conductane may reduce significantly.In an example, wafer can lift away from approximately several ten thousand/inch of chuck.
Because afore-mentioned, the ashing of the photoresist of the implanting ions of high dose can be used as two step processes, wherein utilizes the low temperature preprocessing process to make shell permeable earlier, utilizes the high-temperature anticorrosive agent to remove process then.This preprocessing process can use the chuck temperature that is lower than this resist baking temperature to carry out, and in a situation, this temperature is 120 ℃.Require this low relatively temperature preventing in the situation that the carbonization shell is not removed/punctures, ejection particulate when shell explosion that the gas that disengages because of this resist of thermal decomposition causes also is known as the process of explosion.In case the photoresist shell makes to gas-permeable that by preliminary treatment scanning of the present invention then chip temperature can raise safely to improve the removal speed of resist.Measure and establish and verified the preliminary treatment situation and implant (P, 40keV, 5 * 10 in severe
15/ cm
2) the I linear light cause in the scan plasma jet ashing of resist resist and remove from silicon wafer.
Figure 10 to Figure 17 is the microphoto by the i type semiconductor wafer with photoresist superficial layer of embodiments of the invention processing.Figure 10 shows by the tiny inflation of the thermosetting of the 1kW plasma jet of the 15cm/s network of indulging in serfing the Net.In Figure 11, the pressure that the bubble that breaks when substrate is broken away shows the gas that disengages with the resist-based not implanted of shell below be positioned at the bottom of delamination.In this example, bubble highly is 3 to 4 times of former resist thickness.The foaming effect relates to but is different from the explosion phenomenon, is blown off from the surface with the sheet of this shell.Yet in some cases, foaming is acceptable, does not generate particulate debris with this.In case bubble forms, then the heat conduction from shell to substrate significantly reduces, and its temperature can raise above hundreds of degrees centigrade of substrate temperatures.The localized hyperthermia that causes because of delamination has quickened the etching to shell, goes out as shown in figure 12.In the time of in these openings appear at shell 1901, the substrate resist is exposed to jet and lateral etch 1902 takes place under shell, goes out as shown in figure 13.Figure 14 shows the etch phase than the later stage, and the major part of its mesochite 2011 has been removed and steeped 2010 and merged.
Use the embodiment of the invention to carry out the speed of production that material is removed in order to maximize, plasma jet can move with the electromagnetic power of the maximum possible that can apply.For preventing the explosion during the preprocessing process, then may the essential jet of scanning fast, near being enough to prevent that excessive temperature from rising.In a typical situation, may need multiple preliminary treatment scanning to realize enough permeability, during removing step, prevent explosion at resist.In an illustrative embodiment of the invention, resist can be removed in the single scanning of the speed of 50 to 100cm/s magnitudes fully, and does not change the temperature of substrate.But other of use parameter set, to obtain similar results in the different but relevant embodiment of the invention.
Outside de-bubble formed, other process can cause the shell permeability in the photoresist of implanting ions.For example, Figure 15 shows the netted resist surface that can form during the preprocessing process commitment.As shown in Figure 16, this surface becomes permeable in the later stage of pre-treatment step.
Developed optimum process being used for carrying out illustrated exemplary embodiment of the present invention, with multiple preliminary treatment scanning (microwave power=2.15kW, substrate temperature=100 ℃, sweep speed=105cm/s, O
2: N
2=9: 1, the I linear light that flow=3slpm, pressure=80T) are used to implant cause resist (1.2 microns I line substrate resists, with 120 ℃ hard roasting, then under the energy of 40keV and with 5 * 10
15/ cm
2Severe implant density and implant phosphorus).Next this preliminary treatment removes scanning with 2.5kW with the resist that 40cm/s (and other condition maintenance is identical with pretreated condition) carries out subsequently.All shells and substrate resist are removed from wafer, and as being shown clearly in noresidue when under scanning electron microscopy, observing among Figure 17.
Figure 18 shows with the flow chart form and is used to carry out method 2401 of the present invention.Method can start from introduces step 2402 in the process chamber of the plasma applicator equipment as shown in Figure 1 that is equipped with wafer.If plasma was before lighted at low temperatures, but execution in step 2402 then, and plasma is activated under ambient pressure simultaneously.In step 2404, the pyroconductivity to be used to wish can be adjusted in the clamping interface between wafer and the wafer retainer, is used for high or low thermal conductance.In step 2406, semiconductor wafer can use atmosphere or vacuum power or be clipped in the chuck with electrostatic means.In step 2408, but initialization is used to cool off the operation of the cooling system of plasma discharge tube as previously mentioned.Then, the activation of reactant processing gas can be initial in step 2410.Behind activate plasma, wafer surface can be handled by impacting plasma jet in step 2412.In step 2414, can be by plasma jet bundle scanning wafer.Notice that method 2401 illustrates one embodiment of the present of invention, and can utilize with being equal to shown treatment step multiple combination, omit some step or realize with given different order, this depends on handles and the requirement of equipment.For example, in an embodiment of method 2401, carried out the preliminary treatment of the resist of implanting ions, so that the resist shell is to gas-permeable.In another embodiment of method 2401, resist that implant or pretreated implanting ions only is treated to the selectivity ashing and removes the photoresist layer.
Figure 19 shows a typical method 2501 that is used to realize method step shown in Figure 180 2410.The electromagnetic power source can be activated in step 2502 at first, as the aforementioned.In step 2504, this electromagnetic radiation is sent to plasma discharge tube by waveguide.In step 2506, electromagnetic power is comprised in the trap to be used to protecting wafer not to be subjected to the infringement of uncontrolled radiation.
Though the present invention and advantage thereof describe in detail, will be appreciated that and to produce multiple change, substitute and change at this, and do not depart from by the subsidiary spirit and scope of the invention that claims limited.
Claims (33)
1. equipment that is used for optionally removing from workpiece in manufacture process superficial layer comprises:
Be used to limit atmosphere to inferior atmospheric environment and its interior process chamber that receives workpiece;
Be used to generate the plasma applicator of plasma, the plasma applicator comprises:
Reactant is handled the gas pressurized source of supply;
Handle the plasma discharge tube that gas pressurized source of supply fluid is communicated with described reactant;
Be used for electromagnetic power is guided to described plasma discharge tube to generate the electromagnetic power source of plasma within it; With
Be positioned at described plasma discharge tube end and sentence the nozzle opening that is used for this plasma gas blowing being arrived described process chamber to the direction of this workpiece; With
Comprise centering on described plasma discharge tube substantially, therefore formed the cooling duct around described plasma discharge tube to be used for cooling system by the pipeline of its circulation gaseous coolant.
2. equipment according to claim 1 further comprises the waveguide that is used for electromagnetic power is sent to described plasma discharge tube.
3. equipment according to claim 2 further comprises being used for electromagnetic power is included in microwave trap in the described plasma applicator.
4. equipment according to claim 1, wherein reactant processing gas comprises O
2, H
2, H
2O, N
2Or their combination.
5. equipment according to claim 1, wherein reactant processing gas comprises O
2, H
2, H
2O, N
2Or their combination, and wherein said reactant processing gas does not comprise fluorine.
6. equipment according to claim 1, wherein said plasma discharge tube is made by quartzy or the insensitive ceramic material of other electromagnetism.
7. equipment according to claim 1, wherein said cooling system have for described electromagnetic power source at the power consumption of 2.5kW at least or 1.5kW/cm at least
3Power density under the thermodynamic property that provides of operation.
8. equipment according to claim 1, wherein said electromagnetic power source is with the extremely approximately operation of the frequency between the 2.45GHz of about 100kHz.
9. equipment according to claim 1 further comprises:
Mechanical navigation system, described mechanical navigation system comprise the chuck that is used for workpiece received and keep thereon, with respect to described nozzle scan workpiece, make the superficial layer of described workpiece be exposed to described plasma.
10. equipment according to claim 9, wherein said mechanical navigation system comprises a plurality of electromechanical translation stages that are used to scan described surface of the work, described translation stage can move and make that described chuck can be quickening greater than the acceleration of about 2.5 times of acceleration of gravity, and with greater than the about linear speed location of 100cm/s.
11. equipment according to claim 1, the distance between wherein said nozzle and the workpiece is greater than about 2mm and less than about 20mm.
12. equipment according to claim 9, wherein said a plurality of electromechanical translation stages are arranged as according to cartesian coordinate or polar coordinates locatees.
13. equipment according to claim 9, wherein said chuck further are included in its lip-deep calorifics material layer, described calorifics material layer has the feature of thermal insulation or heat conduction, to revise the contact conductane between described chuck and the workpiece.
14. equipment according to claim 9 further comprises:
Be used to remove workpiece and workpiece is incorporated into device on the described chuck, pressure in the wherein said process chamber is in the state of rising with respect to ambient pressure, and described plasma applicator is kept operation, has therefore eliminated for the needs that extinguish and refire plasma for each the pending workpiece in the described process chamber.
15. equipment according to claim 9 further comprises:
Be used for by by handling power that atmosphere or vacuum apply or by electrostatic force workpiece being clamped in device on the described chuck.
16. one kind is used for optionally removing the method for superficial layer at semiconductor fabrication from wafer, comprises the steps:
Wafer is incorporated into defines atmosphere in the process chamber of inferior atmospheric treatment environment;
The surface wave discharge that is provided by the electromagnetic power source is provided the reactant gas that will flow through discharge tube, flows through the reactant gas of the activation of described discharge tube with generation; With
The reactant gas that activates is ejected on the surface of described indoor and wafer, has optionally removed the superficial layer of wafer and do not lost substrate material substantially with this.
17. method according to claim 16 further comprises by forming the cooling duct around described plasma discharge tube and making gaseous coolant cycle through described cooling duct and comes step that described plasma discharge tube is cooled off.
18. method according to claim 16, wherein said reactant are handled gas and are comprised O
2, H
2, H
2O, N
2Or their combination.
19. method according to claim 16, wherein superficial layer comprises photoresist or other organic or inorganic materials of not implanting.
20. method according to claim 16, wherein superficial layer comprises photo anti-corrosion agent material or other organic or inorganic materials of implanting ions.
21. method according to claim 16 further comprises the steps:
Scan wafer with respect to the reactant gas of spraying with the relative motion of first speed by wafer, make the photoresist shell of implanting thus gas-permeable.
22. method according to claim 21 further comprises the steps:
Scan wafer with respect to the reactant gas of spraying with the relative motion of second speed by wafer, remove photoresist and/or shell from wafer with this.
23. method according to claim 16 further comprises the steps:
Reactant gas is exposed to surface wave discharge under first power level, with this photoresist shell that makes implantation for gas-permeable.
24. method according to claim 23 further comprises the steps:
Reactant gas is exposed to surface wave discharge under second power level, removes photoresist and/or shell from wafer with this.
25. method according to claim 16 further comprises the steps:
By wafer with respect to the relative motion of the reactant gas of the injection that is in first temperature scanning wafer, with this photoresist shell that makes implantation for gas-permeable.
26. method according to claim 25 further comprises the steps:
By the relative motion scanning wafer of wafer, remove photoresist and/or shell from wafer with this with respect to the reactant gas of the injection that is in second temperature.
27. method according to claim 16, wherein said activation step further comprises:
Excitation electromagnetic power source is to be used for generating surface wave on described plasma discharge tube;
Electromagnetic power is sent to described plasma discharge tube by the waveguide that joins described plasma discharge tube to; With
Use the trap in the described plasma applicator to comprise electromagnetic radiation.
28. method according to claim 16, wherein said electromagnetic power source is moved with the frequency between about 100kHz to 2.45GHz.
29. method according to claim 16 further comprises the steps:
Wafer is placed on the chuck; With
Scan chuck by the mechanical navigation system that is installed to described chuck with respect to the reactant gas of spraying, the chuck of having placed wafer on it is orientated as the reactant gas that makes the superficial layer of wafer be exposed to injection with this.
30. method according to claim 29, the operation of wherein said mechanical navigation system make described chuck to quicken with the acceleration greater than about 2.5 times of acceleration of gravity, and with linear speed location greater than about 100cm/s.
31. method according to claim 29, further comprise the steps: to revise the thermo-contact thermal conductance between described wafer retainer and the wafer thus by at wafer be installed in one deck thermal insulation between the wafer retainer on the described chuck or temperature that Heat Conduction Material changes wafer.
32. method according to claim 29, further comprise: the pressure in described process chamber is in ambient pressure following time, remove wafer and introduce wafer to described chuck, eliminated the reacting gas of activation of needs light to(for) each wafer of in described process chamber, handling thus.
33. method according to claim 31 further comprises: by by handling power that atmosphere or vacuum provide or semiconductor wafer being clamped on the described chuck by electrostatic force.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2005/044367 WO2007067177A1 (en) | 2005-12-07 | 2005-12-07 | Medium pressure plasma system for removal of surface layers without substrate loss |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101326613A true CN101326613A (en) | 2008-12-17 |
| CN101326613B CN101326613B (en) | 2010-12-08 |
Family
ID=35966034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800522585A Expired - Fee Related CN101326613B (en) | 2005-12-07 | 2005-12-07 | Middling pressure plasma system for removing surface layer without losing substrate |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1958232A1 (en) |
| JP (1) | JP2009518854A (en) |
| CN (1) | CN101326613B (en) |
| WO (1) | WO2007067177A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637633A (en) * | 2011-06-17 | 2012-08-15 | 京东方科技集团股份有限公司 | Array substrate manufacturing method and system |
| CN110114863A (en) * | 2016-12-20 | 2019-08-09 | 朗姆研究公司 | Use the system and method for metastable state the free radical selective detachment activated and etching of double gas chamber spray heads |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140119726A (en) | 2012-01-06 | 2014-10-10 | 노벨러스 시스템즈, 인코포레이티드 | Adaptive heat transfer methods and systems for uniform heat transfer |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE160055T1 (en) * | 1990-09-07 | 1997-11-15 | Sulzer Metco Ag | APPARATUS FOR PLASMA THERMAL PROCESSING OF WORKPIECE SURFACES |
| JP3180092B2 (en) * | 1997-12-03 | 2001-06-25 | 松下電工株式会社 | Plasma processing system and plasma processing method |
| KR100263902B1 (en) * | 1998-04-20 | 2000-09-01 | 윤종용 | Surface wave coupled etching apparatus |
| JP2000036488A (en) * | 1998-07-21 | 2000-02-02 | Speedfam-Ipec Co Ltd | Wafer flattening method and system therefor |
| JP2000124189A (en) * | 1998-10-21 | 2000-04-28 | Speedfam-Ipec Co Ltd | Local etching device and local etching method |
| US6429142B1 (en) * | 1999-02-23 | 2002-08-06 | Taiwan Semiconductor Manufacturing Company | In-situ photoresist removal by an attachable chamber with light source |
| JP4294816B2 (en) * | 1999-11-11 | 2009-07-15 | スピードファム株式会社 | Silicon wafer surface treatment method, odorless silicon wafer production method, silicon wafer oxide film formation method, silicon oxide wafer production method, oxygen active species atmosphere formation apparatus, and planarization treatment system |
| US6534921B1 (en) * | 2000-11-09 | 2003-03-18 | Samsung Electronics Co., Ltd. | Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system |
| JP2003109941A (en) * | 2001-09-28 | 2003-04-11 | Canon Inc | Plasma treatment device and surface treatment method |
| US7183514B2 (en) * | 2003-01-30 | 2007-02-27 | Axcelis Technologies, Inc. | Helix coupled remote plasma source |
| US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
| US7892357B2 (en) * | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
| JP4278533B2 (en) * | 2004-02-19 | 2009-06-17 | 芝浦メカトロニクス株式会社 | Ashing method and ashing apparatus |
-
2005
- 2005-12-07 CN CN2005800522585A patent/CN101326613B/en not_active Expired - Fee Related
- 2005-12-07 WO PCT/US2005/044367 patent/WO2007067177A1/en active Application Filing
- 2005-12-07 EP EP05853311A patent/EP1958232A1/en not_active Withdrawn
- 2005-12-07 JP JP2008544307A patent/JP2009518854A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637633A (en) * | 2011-06-17 | 2012-08-15 | 京东方科技集团股份有限公司 | Array substrate manufacturing method and system |
| CN102637633B (en) * | 2011-06-17 | 2015-08-12 | 京东方科技集团股份有限公司 | A kind of manufacturing method of array base plate and system |
| CN110114863A (en) * | 2016-12-20 | 2019-08-09 | 朗姆研究公司 | Use the system and method for metastable state the free radical selective detachment activated and etching of double gas chamber spray heads |
| CN110114863B (en) * | 2016-12-20 | 2024-04-16 | 朗姆研究公司 | System and method for metastable activated radical selective stripping and etching using dual chamber showerhead |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007067177A1 (en) | 2007-06-14 |
| CN101326613B (en) | 2010-12-08 |
| EP1958232A1 (en) | 2008-08-20 |
| JP2009518854A (en) | 2009-05-07 |
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