CN101323784A - Warm white luminous diode and orange fluorescent powder thereof - Google Patents

Warm white luminous diode and orange fluorescent powder thereof Download PDF

Info

Publication number
CN101323784A
CN101323784A CNA2008101473948A CN200810147394A CN101323784A CN 101323784 A CN101323784 A CN 101323784A CN A2008101473948 A CNA2008101473948 A CN A2008101473948A CN 200810147394 A CN200810147394 A CN 200810147394A CN 101323784 A CN101323784 A CN 101323784A
Authority
CN
China
Prior art keywords
fluorescent powder
fluorescent material
spectrum
ion
orange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008101473948A
Other languages
Chinese (zh)
Inventor
索辛纳姆
罗维鸿
蔡绮睿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luo Weihong
Luo Wenyuan
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CNA2008101473948A priority Critical patent/CN101323784A/en
Publication of CN101323784A publication Critical patent/CN101323784A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention relates to an orange-yellow fluorescent powder which is a rare earth aluminate with a garnet structure and is characterized in that: the components of the fluorescent powder are added with compounds of elements of IV and V families; stoichiometric equation of the orange-yellow fluorescent powder is: (Sigma Ln)3-xMe<IV>xAl5-ySi<y>O12-(x+y)Nx+y, wherein, Ln is equal to Y, Gd, Ce, Lu and Tb; Me<IV> is equal to Zr and/or Hf; the stoichiometric index of the powder is that: x is more than or equal to 0.001 but less than or equal to 0.1, and y is more than or equal to 0.001 but less than or equal to 0.1. In addition, the invention also discloses a warm white light-emitting diode using the orange-yellow fluorescent powder.

Description

Warm white light light-emitting diode (LED) and orange fluorescent powder thereof
[technical field that the present invention belongs to]
The present invention is relevant with a kind of microtronics and lighting technical field, particularly, this modern technologies field is referred to as " solid state light emitter (Solid state lighting) ", these theories have been brought the progressively innovation of lighting engineering, are that the heterojunction semiconductor light source of matrix has replaced incandescent light and fluorescent light gradually with In-Ga-N (indium-gallium nitride).
[prior art]
New semiconductor lighting technology of rapid rising again on the basis of these two technical fields now, English is referred to as ' Solid statelighting '.In this field, creating with the heterogeneous new type light source of becoming matrix of In-Ga-N and (please refer to S.Nakamura.Blue laser, Springer Verlag, Berlin.1997), the village repaiies one among the research scholar of the original artificial Japan of this In-Ga-N heterojunction that contains a large amount of quantum well.
First is at synthetic in 1994 at the luminous heterojunction that radiating surface contains quantum well.After having spent 5 years ' white light emitting diode ' power of patenting.This photodiode is the heterojunction semiconductor framework (please refer to people's such as S.Schinuzu Taiwan TW156177 patent 01.1.2005) that contains fluorescent material.The gold-tinted combination results white light that the blue light of its heterojunction (that is P-N connects face) emission and fluorescent powder grain send.
As far back as the sixties in 20th century shellfish draw the laboratory to create photodiode, this photodiode adopts GaAs-GaP series of elements in the emission of 800~900nm zone as heterojunction, is referred to as anti-Stokes Y 2O 3The fluorescent material of S:ErYb composition is as luminescent material, converts the light of infrared light region to visible light.The photodiode of for many years producing has all adopted this framework, visible emitting on the redness of visible light and green sub-band.If in the first layer of photodiode ' bilayer ' framework (being fluorescent powder grain layer and heterojunction layer), the radiation of fluorescent material is a short-wave radiation, so Soviet Union slip-stick artist B.C. Abramoff (B.C.Ablamov) and B.P. Su Shikefu (B.P.Sushikov) (please refer to the A. gold. ' semi-conductor ', world press, Moscow, nineteen eighty-two) framework that is proposed just directly belongs to the semiconductor framework of GaN series, and this framework is coated with so-called stokes (Stokes) fluorescent material (converting the part primary rays of the different framework of GaN to long-wave radiation).Generally speaking, this two-level architecture characteristics of photodiode are just known by people in the period of 1965~80.
The characteristics of white light emitting diode are that it combines two kinds of radiation: shortwave (blue) and long wave (xanchromatic) radiation.This phenomenon is to use newton's complementary color principle.According to the complementary color principle, use paired complementary color, as blue and yellow, light blue and orange-yellow, blue-greenish colour and redness can obtain white light.These electronics-radiation techniques such as the picture tube of black and white television set and radar have all been used the complementary color principle (please refer to the K. mole have been paused (K.Mordon), B. Zi Waruike (B.Zvoryki), " TV ", world press, nineteen fifty-five for a long time.Leverenz Luminescence of solid, NY, nineteen fifty).The ZnSAg fluorescent material that is distributed in the radar pipe above the window of tube is luminous under the impact of electronics, and the blue-light excited ZnSCdSCu fluorescent material of launching produces photoluminescence.Can observe very bright white light falling into a little of electron beam, this white light is by two independent fluorescent material spectrum compositions.And what use in the picture tube of monochrome television is the phosphor powder layer of layering or individual layer, and this phosphor powder layer is made up of two kinds of cathode-luminescence powder (blueness and xanchromatic), blue light that they are launched and the very bright white light of gold-tinted combination results.
This shows that principle recited above is exactly the long-wave radiation that a kind of shortwave energy transformation of fluorescent material is become another kind of fluorescent material.Two kinds of light (blue light and gold-tinted) are launched the generation white light simultaneously, and this method is early well known.
Occurring a kind of yellow fluorescent powder of special composition and the blue ray radiation of In-Ga-N heterojunction afterwards interacts.The designer once proposed to use yttrium aluminum garnet Y 3Al 5O 12: Ce is as this material (please refer to people's such as S.Schinuzu Taiwan TW156177 patent 01.1.2005), and also this just material has caused much not having the company of license to be under an embargo when producing white light emitting diode using this fluorescent material.Yet, this with Y 3Al 5O 12: Ce is developed the sixties in 20th century [Blasse G] for the cathode-luminescence powder on basis and (please refer to A Bula end husband .P. Su Shikefu, Soviet Union's works, N635813,12.09.1977 year) and be widely used in the actual production, to make the screen of scintillator, especially CRT.In screen, use blue and xanchromatic cathode-luminescence powder (Y 2SiO 5: Ce and (Y, Gd) 3Al 5O 12: Ce) mixture is to show chromatic image.
Although this technology is widely used, but still there is a series of shortcoming in it: 1. photodiode is only at high colour temperature T 〉=6500K, chromaticity coordinates is 0.30≤x≤0.31 simultaneously, 0.30 just first the usefulness of photodiode of reproducible white light 2. is very low under the situation of≤y≤0.32, is no more than 10 lumens/watt.
There have been a large amount of patents to be checked and approved at present to revise these deficiencies.They are relevant with the so-called ' warm white ' light source of creation mostly, and colour temperature is 2500≤T≤3500K, and chromaticity coordinates is 0.40≤x≤0.44,0.38≤y≤0.44.
About creating such warm white source, one of them feasible scheme is: at the blue-light excited fluorescent material that produces orange or orange-red light down of In-Ga-N heterojunction.This viewpoint had once proposed such luminescent material in our U.S. US2007/0272899A patent (please refer to N.P.Soshchin etc. U.S. US2007/0272899A application case 29.11.2007) application case, it is by cerium and two orange red radiation of ion-activated generation of praseodymium of yttrium aluminum garnet.
This fluorescent material all has production in a lot of enterprises of country variant, and it can be guaranteed: 1. the colour temperature of white semiconductor light source is T>3000K, and concrete scope is 3200~3500K; 2. the average light efficiency of photodiode reaches 50~75 lumens/watt.
Certain this fluorescent material also has some substantial shortcomings: 1. λ on the lens cover of photodiode MaxFluorescent material radiation peak and the λ of=548nm MaxThe misalignment that exists between the spectrum peak of=610nm causes the technology of ununiformity 2. fluorescent material samples of white light synthetic very complicated and to be difficult to duplicate the quantum output of 3. prepared fluorescent material lower, has only 75~85%; And 4. white lights that can't duplicate T≤3000K, really belong to a fly in the ointment.
[summary of the invention]
For solving the shortcoming of above-mentioned known technology, main purpose of the present invention is the warm white light light-emitting diode (LED) that an orange fluorescent powder is provided and uses this fluorescent material, and it can eliminate above-mentioned shortcoming.
For solving the shortcoming of above-mentioned known technology, another object of the present invention system provides an orange fluorescent powder, and it guarantees can duplicate stable warm white on photodiode.
For solving the shortcoming of above-mentioned known technology, another object of the present invention system provides a new orange fluorescent powder, does not all propose in the former any one piece of patent documentation of the prescription of this fluorescent material.
For achieving the above object, the invention provides a kind of orange fluorescent powder, the rare earth aluminic acid salt that it has the garnet framework is characterized in that: added the compound of IV and V group element in this fluorescent material composition, the stoichiometric equation formula of this orange fluorescent powder is: (∑ Ln) 3-xMe IV xAl 5-ySi yO 12-(x+y)N X+y, wherein Ln=Y, Gd, Ce, Lu and Tb, Me IV=Zr and/or Hf, this stoichiometry index is: 0.001≤x≤0.1,0.001≤y≤0.1.
For achieving the above object, the invention provides a kind of warm white light light-emitting diode (LED) that uses orange fluorescent powder of the present invention, it has the heterogeneous matrix of becoming of an In-Ga-N, contain a large amount of quantum well, and has a spectrum transmodulator, this photodiode is characterised in that: all luminous flat and the side of this spectrum transmodulator and heterojunction connect, and this spectrum transmodulator is even with concentration, and the form that is centrosymmetric is distributed in this photodiode.
[accompanying drawing summary]
Fig. 1 is a synoptic diagram, and it has illustrated standard analysis fluorescent material (Y 0.75Gd 0.22Ce 0.03) 3Al 5O 12Spectroscopic analysis figure.
Fig. 2 is a synoptic diagram, and it has illustrated fluorescent material (No.2 in the table 1) (Gd 0.6Y 0.25Lu 0.05Tb 0.05Ce 0.03) 3Zr 0.006Al 4.99Si 0.01O 11.984N 0.016Spectroscopic analysis figure.
Fig. 3 is a synoptic diagram, and it has illustrated fluorescent material (No.3 in the table 1) (Gd 0.67Y 0.2Lu 0.05Tb 0.02Ce 0.03) 3Zr 0.009Al 4.98Si 0.02O 11.971N 0.029Spectroscopic analysis figure.
Fig. 4 is a synoptic diagram, and it has illustrated fluorescent material (No.4 in the table 1) (Gd 0.7Y 0.1Lu 0.04Tb 0.04Ce 0.04) 3Zr 0.024Al 4.96Si 0.04O 11.936N 0.064Spectroscopic analysis figure.
Fig. 5 is a synoptic diagram, and it has illustrated fluorescent material (No.5 in the table 1) (Gd 0.72Y 0.1Lu 0.01Tb 0.01Ce 0.02) 3Zr 0.042Al 4.92Si 0.08O 11.878N 0.122Spectroscopic analysis figure.
Fig. 6 is a synoptic diagram, and it has illustrated fluorescent material (No.6 in the table 1) (Gd 0.75Y 0.08Lu 0.05Tb 0.05Ce 0.05) 3Hf 0.06Al 4.9Si 0.1O 11.894N 0.16Spectroscopic analysis figure.
Fig. 7 a~f is a synoptic diagram, and it shows the synoptic diagram of several particle displaing micro pictures of this fluorescent material sample respectively.
[embodiment]
At first, the shortcoming that the objective of the invention is to eliminate above-mentioned fluorescent material and use the warm white light light-emitting diode (LED) of this fluorescent material.In order to reach this target, orange fluorescent powder of the present invention has the rare earth aluminic acid salt of garnet framework, it is characterized in that: added the compound of IV and V group element in this fluorescent material composition, the stoichiometric equation formula of this orange fluorescent powder is: (∑ Ln) 3-xMe IV xAl 5-ySi yO 12-(x+y)N X+y, wherein Ln=Y, Gd, Ce, Lu and Tb, Me IV=Zr and/or Hf, this stoichiometry index is: 0.001≤x≤0.1,0.001≤y≤0.1.
Wherein, this fluorescent material is luminous in the orange zone of spectrographic, and light emitting region is from 490~770nm, and the spectrum maximum value is λ Max〉=570nm, half-wave is wider than 120nm.
The pass of the formed rare earth element positively charged ion of this fluorescent material sublattice is: ∑ Lu=mY+nGd+pCe+qLu+lTb, wherein, f=m+n+p+q+l=3-x.
The concentration of the rare earth element positively charged ion lattice that this fluorescent material is contained is: Y:0.05≤m/f≤0.25; Gd:0.50≤n/f≤0.65; Ce:0.001≤p/f≤0.1; Lu:0.001≤q/f≤0.05; Tb:0.001≤l/f≤0.05.
This silicon ion Si + 4Content in the negatively charged ion sublattice is 0.001≤[Si]=y≤0.1 atomic fraction.
This IV family ion content in the positively charged ion sublattice is 0.001≤x≤0.1 atomic fraction.
The particle of this fluorescent material is slightly circle shape, and average particle size is 2.2≤d 50≤ 5 μ m.
The pattern of this fluorescent powder grain is the ball cone, the optical transparency height.
Below explain the physical-chemical essence of fluorescent material of the present invention.Point out that at first the composition of this fluorescent material has the different of essence with principal component; The second, composition proposed by the invention contains 5 kinds of rare earth elements: gadolinium (Gd), and yttrium (Y), cerium (Ce) also has terbium (Tb) and gold-plating (Lu); The 3rd, added IV family metallic element zirconium (Zr) or hafnium (Hf) in the positively charged ion sublattice, the degree of oxidation of these two kinds of compositions all is+4; The 4th, added IV family elemental silicon in the negatively charged ion sublattice, its degree of oxidation is+4; Added V group element in the 5th negatively charged ion sublattice, as nitrogen N, its degree of oxidation is-3.
The principal feature of this composition is: Zr in the positively charged ion sublattice + 4And/or Hf + 4Ionic replacement main Gd + 3, Tb + 3, Lu + 3Ion (it is to observe the ionic equilibrium rule that the ion in the positively charged ion sublattice is replaced).Gd + 3Ionic radius
Figure A20081014739400111
Coordination valence K=6.Rare earth ion terbium Tb + 3Radius
Figure A20081014739400112
Lu + 3For
Figure A20081014739400113
And replace their IV family metal ion, Zr + 4Radius Hf + 4Radius be
Figure A20081014739400115
It also is to observe the equivalent law that the ion that takes place under different ionic valences is replaced.It is different replacing with being replaced the ionic degree of oxidation.Main ion Zr + 4And Hf + 4-tetravalence attitude.This different valence state forms point defect when taking place to replace.Enter into the Zr of positively charged ion lattice + 4The Gd of ionic replacement three valence states + 3Ion forms (Zr simultaneously Gd) °.Be zirconium Zr + 4Replace Gd + 3, the total surplus electric charge is present in the top of bracket with the form of round dot.
Similarly, the hafnium ion of tetravalence attitude replaces Gd + 3Can form (Hf behind the ion Gd) °.Work as Lu + 3And Tb + 3Ion is replaced by IV family element ion, and the state of charge of point defect does not change, and the ion that also keeps equivalent is simultaneously replaced.Want lay special stress on a bit, the stoichiometry rule of phosphor compounds composition proposed by the invention is broken at this simultaneously.In the particular case that is proposed is that the ion that is replaced can not disappear or evaporate.The method applied in the present invention is: calculate the necessary quantity of main component in advance, zirconium that is added and/or hafnium composition must meet the ion chemistry metered amounts in the positively charged ion sublattice.
Next be negatively charged ion sublattice how to set up the fluorescent material that proposes.At first, different valence state also can take place in the negatively charged ion sublattice replaces.Anionic node place, ionic radius is Al + 3It is 4 silicon ion Si that ion is replaced by the oxidation valence state + 4, form new point defect (Si simultaneously Al) °.And ionic radius is completely different, &tau;
Figure A20081014739400123
Thus, formed two some shortcomings in positively charged ion and negatively charged ion sublattice, lattice has two residue positive charges simultaneously.The nitrogen ion N that in the negatively charged ion sublattice, adds proposed by the invention -3To reach charge compensation.The nitrogen ion is being replaced oxonium ion O -2The time have a remaining negative charge, just (No) '.Like this, charge balance is just set up under this condition below: (Me Gd) ° x+ (Si A1) ° y=(No) ' X+y
Form different valence state center (No) ' time need negatively charged ion node (Oo) to do how much expansions because oxonium ion O -2Radius
Figure A20081014739400124
Nitrogen ionic radius
Figure A20081014739400125
Differ between the two+10%, such gap is possible according to the crystal chemistry standard.
But the ion replacement that is taken place in fluorescent material positively charged ion and the negatively charged ion sublattice can cause being replaced garnet lattice parameter value and become big.According to data of the present invention, for traditional yttrium aluminum garnet Y 3Al 5O 12Its lattice parameter is a=1.2001nm, will rise to a=1.2110nm when the part yttrium is changed to this numerical value of gadolinium so.If the part gadolinium is changed to the Tb ion, numerical value will become a so Tb=1.1942nm.Add a large amount of gold-plating ions in the lattice of this fluorescent material, data become a Lu=1.1932nm.The present invention draws according to above these data: the more little lattice of the spacing between the ion node is just closely knit more.
IV family element ion replaces the main different valence state that positively charged ion took place and replaces the parameter that can not change lattice, because the amount of ions of being added and few.Similarly, the nitrogen ion N in the adding anion lattice -3Replace oxonium ion O -2Also can not change the parameter of lattice.
Garnet proposed by the invention (common garnet O 10 n-when Ia3d) the fluorescent material lattice parameter reduced, interior lattice parameter was also changing.Simultaneously, for main active ions Ce + 3, such lattice variations is no longer along with 5D 2The degree that ion is excited and decaying, so, Ce + 3The ionic radiation spectrum has substantial expansion and moves on to the long zone of spectrum wavelength of visible light.This fluorescent material is by Ce + 3Ion excitation, its emmission spectrum wavelength is λ=490~770nm.Below these several figure can more clearly interpret these phenomena.Fig. 1 is standard analysis fluorescent material (Y 0.75Gd 0.22Ce 0.03) 3Al 5O 12Spectroscopic analysis figure.As can be seen from the figure, the spectral range of this fluorescent material is λ=505~720nm, spectrum maximum value λ Max=560.7nm, the wide λ of half-wave 0.5=124.2nm.
Fig. 2 is fluorescent material (No.2 in the table 1)
(Gd 0.6Y 0.25Lu 0.05Tb 0.05Ce 0.03) 3Zr 0.006Al 4.99Si 0.01O 11.984N 0.016Spectroscopic analysis figure.Its spectral width is λ=498~780nm, and half-wave is wide to be λ 0.5=129.5nm, the spectrum maximum value is λ Max=571.7nm.
Fig. 3 is fluorescent material (No.3 in the table 1)
(Gd 0.67Y 0.2Lu 0.05Tb 0.02Ce 0.03) 3Zr 0.009Al 4.98Si 0.02O 11.971N 0.029Spectroscopic analysis figure.The spectral range of this fluorescent material is λ=495~785nm, spectrum maximum value λ Max=580.4nm, the wide λ of half-wave 0.5=129.2nm, this numerical value are the same with fluorescent material No.2 in practice.
Fig. 4 is fluorescent material (No.4 in the table 1)
(Gd 0.7Y 0.1Lu 0.04Tb 0.04Ce 0.04) 3Zr 0.024Al 4.96Si 0.04O 11.936N 0.064Spectroscopic analysis figure.Spectral range is from λ=496~789nm.The wide λ of half-wave 0.5=129.9nm, the spectrum maximum value moves to λ Max=581.5nm.
Fig. 5 is fluorescent material (No.5 in the table 1)
(Gd 0.72Y 0.1Lu 0.01Tb 0.01Ce 0.02) 3Zr 0.042Al 4.92Si 0.08O 11.878N 0.112Spectroscopic analysis figure.Spectral range is λ=496~796nm.The wide λ of the half-wave of this fluorescent material 0.5=133nm.The spectrum maximum value is λ Max=582.2nm.
Fig. 6 is fluorescent material (No.6 in the table 1)
(Gd 0.75Y 0.08Lu 0.05Tb 0.05Ce 0.05) 3Hf 0.06Al 4.9Si 0.1O 11.894N 0.16Spectroscopic analysis figure.Spectral range is λ=498~798nm, and the spectrum maximum value is λ Max=583.2nm, for the wide smaller situation of its half-wave, the present invention will make explanations to it below.
By we can draw following these conclusions to the analysis of this 6 figure: 1. all non-constant width of the spectrum of these fluorescent material proposed by the invention, wideer 60~90 microns than the fluorescent material of standard; 2. these fluorescent material proposed by the invention all move to Long wavelength region, and the spectrum maximum value has moved 23 microns; 3. the spectrum half-wave of these fluorescent material proposed by the invention is wide to have enlarged 9 microns.
Be accompanied by the variation (partial data is listed in table 1) of the curve of spectrum, the radiation spectrum of these fluorescent material also has some other variation.Become λ=582nm as radiating predominant wavelength from λ=569nm.Variation has all taken place in the Reinheitszahl that typical example is exactly radiating chromaticity coordinates index (seeing also table 1) and color.Be necessary to point out that the spectrum maximum value of these fluorescent material all is positioned at the orange-yellow zone of radiating.
Fluorescent material with these spectrum advantages, the rare earth element ratio in its positively charged ion sublattice is: ∑ Ln=mY+nGd+pCe+qLu+lTb.Wherein, m+n+p+q+l=3-x.
An important characteristic of these fluorescent material proposed by the invention is: remove the element or the IV family element that add in the positively charged ion sublattice, i.e. and Zr and/or Hf, the summation of all rare earth elements equals 3 atomic fractions.And but the ion branch rate variation range of these interpolations is 0.001≤x≤0.1 atomic fractions.
Be necessary to point out the principal element of positively charged ion sublattice, i.e. gadolinium ion Gd + 3, ruthenium ion Y + 3, gold-plating ion Lu + 3, terbium ion Tb + 3And cerium ion Ce + 3, its concentration can influence the ionic radiation spectrum that proposes and change.The Zr that adds + 4And Hf + 4Element, its atomic percent can be so that the radiation spectrum deviation of the fluorescent material that proposes be less.
For example, in the positively charged ion sublattice, add a large amount of Zr + 4Ion can be with the wide lifting Δ of the half-wave of radiation spectrum=1~1.5nm.If the Zr that adds + 4Ionic concn is lower, the wide Δ=2~2.5nm that then reduces of the half-wave of radiation spectrum.And the Hf that adds + 4Ionic concn can cause taking place the persistence of fluorescent material substantial variation.In the positively charged ion sublattice, add Hf + 4Ion can with time length of twilight sunset from τ eHow=100 rise to τ second eHow second=122.The clear luminescence decay time that stops back fluorescent material that excites of this parameter list has reduced 1/e doubly.And to reach this effect and only need add a spot of Hf + 4Get final product.Work as Hf + 4Ionic concentration is 0.01% o'clock, can promote the persistence of fluorescent material, if but this ionic concentration is reduced to [Hf + 4]≤0.001, the time length of twilight sunset then drops to τ eHow second=98.
Table 1 has been enumerated the lighting engineering parameter of these fluorescent material.Can judge that from chromaticity coordinates, predominant wavelength, glow color purity and colour temperature all these fluorescent material all belong to orange-yellow luminescent material among the present invention.As far as we know, up to the present also there is not one piece of document to deliver this orange fluorescent powder based on garnet.
Table 1.
N o The basal component of fluorescent material Add mixture atomic fraction SiO 2MeN Chromaticity coordinates Spectrum, wavelength X Max, nm λ 0.5 CT, (.K)
1 (Y 0.75Gd 0.22Ce 0.03) 3Al 5O 12 -- 0.3725 0.4337 560.7 124.2 4518
2 (Gd 0.6Y 0.25Lu 0.05Tb 0.05Ce 0.03) 3 Zr 0.006Al 4.99Si 0.01O 11.984N 0.016 0.01 0.006 0.4528 0.4280 571.7 129.5 2935
3 (Gd 0.67Y 0.2Lu 0.05Tb 0.02Ce 0.03) 3Zr 0.009Al 4.98Si 0.02O 11.971N 0.029 0.02 0.009 0.4514 0.4238 580.4 129.2 2924
4 (Gd 0.7Y 0.1Lu 0.04Tb 0.04Ce 0.04) 3 Zr 0.024Al 4.96Si 0.04O 11.936N 0.064 0.04 0.024 0.4569 0.4242 581.5 129.9 2846
5 (Gd 0.72Y 0.1Lu 0.01Tb 0.01Ce 0.02) 3Zr 0.042Al 4.92Si 0.08O 11.878N 0.122 0.08 0.042 0.4572 0.4180 582.2 131 2795
6 (Gd 0.75Y 0.08Lu 0.05Tb 0.05Ce 0.05) 3Hf 0.06Al 4.9Si 0.1O 11.894N 0.16 0.100.06 0.4516 0.4137 583.2 131 2843
It may be noted that will obtain this orange-yellow fluorescent material must possess following this condition: the concentration of each rare earth element is Y:0.25≤m/m+n+p+q+l≤0.5 in the positively charged ion lattice,
Gd: 0.50≤n/m+n+p+q+l≤0.65
Ce: 0.001≤p/m+n+p+q+l≤0.1
Lu: 0.001≤q/m+n+p+q+l≤0.05
Tb: 0.001≤l/m+n+p+q+l≤0.05。
The present invention is done some important supplementary notes here.At first, we have pointed out that the positively charged ion yttrium in the fluorescent material is no more than 0.5 atomic fraction, gadolinium ion Gd + 3Atomic fraction reach 0.65, the maximum concentration of these two elements is than for [Gd]/[Y]=2.6 so.Thus, this fluorescent material can be referred to as gadolinium-yttrogarnet.But also more than these two of the principal elements in this fluorescent material prescription have also added gold-plating ion Lu in its composition + 3With terbium ion Tb + 3The effect of these two complementary elements just is to control the cubic(al)grating parameter of this garnet phosphor powder.Just as mentioned above, the ion of these interpolations can reduce the parameter value of lattice and promote the tension force of interior lattice.Though yttrium (Y), gold-plating (Lu) and these elements of terbium (Tb) are not equal on atomic mass, and reality their concentration in the composition of this fluorescent material equates, so these atoms of elements branch rates can reach 0.05 unit.In view of the above, the name of fluorescent material proposed by the invention is called GYLTAG (being gadolinium-yttrium-gold-plating-terbium-aluminium garnet).
The Ce that adds + 3Number of ions value difference also can be brought significantly and change.If Ce + 3Ionic concentration is low, and the spectrum half-wave of radiation curve is wide can to increase Δ=1~3nm, if the amount of this active ion much then can cause the maximum value of radiation spectrum to be dwindled.Contain high density Ce + 3The major advantage of ionic fluorescent material is, when fluorescent material is excited by photodiode, when in essence change takes place in exciting power, its again radiation have very high rectilinearity.The optical excitation that takes place on heterojunction is 10 21~10 23Quantum/cm 2Second, these blue quantum are fallen on the fluorescent powder grain and are produced fluorescence.The quantum output that this process produces is bordering on 1 (0.95).If but the radiation power of the different framework of semi-conductor were promoted 10 times, the light quantity subnumber that the standard garnet phosphor powder is radiated would increase by 6~7 times.This phenomenon is to break away from straight-line law, is referred to as the non-linear phenomena (according to linear law, along with the power that promotes ten times, quantum number is correspondingly 11-fold increase also) of the luminescent material of saturated phenomenon or white light emitting diode.
We find in research work, with active ion Ce + 3Starting point concentration promote 50~75% and just can eliminate the saturated phenomenon that fluorescent material produces because of exciting power fully.The present invention simultaneously will point out, above the optics that mainly is meant fluorescent material narrated excite again, if in the process of strengthening the photodiode electric power, promote the heating power that drops on the fluorescent material, the phenomenon of radiating energy decreases can appear so simultaneously.The reason of this phenomenon is based on the material of fluorescent material thermal expansion to have taken place.And thermal expansion causes weakening of interior crystal field, makes luminous energy descend.We observe, and fluorescent material is heated to 125 ℃, and its luminous efficacy is reduced to original 1/2.We test this fluorescent material on special instrument, observe the influence of the composition of fluorescent material to it.But fluorescent material of the present invention is heated to T=140 ℃, Gd in the lattice + 3The fluorescent material that ion content is maximum has been preserved 85~87% luminous efficacy, and the more less fluorescent material of gadolinium ion content has been preserved 89~91% luminous efficacy.
Why this fluorescent material has these advantages, is because the silicon ion Si in its negatively charged ion sublattice + 4Content be 0.001≤[Si]=y≤0.1 atomic fraction.
Chemical equivalent equation as this fluorescent material is write, and has added silicon in its composition, exactly, and part A l + 3Ion is replaced by its negatively charged ion sublattice fully.We find, add silicon ion Si in the garnet phosphor powder composition + 4, can also impel Ce on the yttrium aluminum garnet framework + 3The displacement of ionic radiation spectrum generation long wave.Undoubtedly, a little less than the influence of silicon ion is replaced the influence that is brought than the same valency of gadolinium-yttrium.If the latter can so that radiation spectrum to 45~50 microns of red area displacements, Si so + 4The displacement that ion brings has 8~10 microns.And such displacement is only at Si + 4Just can take place under the not high situation of ionic concn.
Be necessary to point out, in composition, add silicon ion Si + 4Can change the framework of fluorescent material excitation spectrum, the maximum absorption scope moves on on λ=460~465nm from λ=450~455nm.The surface of fluorescent powder grain has two kinds of distinct colors, ash-incarnadine.But at this moment the optical absorption value of fluorescent powder grain and optical transparency can not change to some extent.
We understand, silicon ion Si + 4Concentration range be 0.001≤Si≤0.1 atomic fraction.When the concentration of silicon ion is got minimum value, i.e. Si + 4=0.001 atomic fraction, the main component ratio Gd/Y=2.6 of fluorescent material, the radiation spectrum maximum value is not moved.When the content of silicon ion is Si + 4Long wave displacement=1nm obviously takes place in=0.01 atomic fraction.Silicon ion Si + 4Optimum content be 0.045~0.065 atomic fraction, in this scope, can make the long wave displacement reach 8~10nm, simultaneously with the wide expansion 1.5~2.5nm of the half-wave of radiation spectrum.The light that fluorescent material sends belongs to the orange-yellow zone of spectral radiance.
This advantage of this fluorescent material can realize under this condition below: add IV family element in the positively charged ion sublattice of fluorescent material, the content of these elements is 0.001≤x≤0.1 atomic fraction in the sublattice.
Undoubtedly, the Zr that is added + 4And/or Hf + 4The silicon ion Si of fluorescent material negatively charged ion sublattice is advanced in ionic quantity and interpolation + 4Content very approaching.Why this also must add Zr just in the positively charged ion sublattice + 4And/or Hf + 4Physical-chemical reason place.Comparison diagram 1 and other several figure are in the spectrum maximum value of blue region, and these elements is added with the lifting that helps the fluorescent material receptivity as can be seen.Do not add zirconium or hafnium if (please refer to Fig. 1) in the standard samples, " blueness " of its heterojunction initial light reflection can be very high so.And contain the fluorescent material of zirconium or hafnium element, and its blue light reflecting part then reduces by 1.5~1.8 times, and simultaneously, the brightness of this fluorescent material does not only descend, and increases to some extent on the contrary.
Point out among the present invention, the point defect of positive charge takes place can form when different valency is replaced in positively charged ion and negatively charged ion sublattice.Have a lot of different schemes can preserve the crystalline electric neutrality, the method that the present invention selects is to add the nitrogen ion N of negative charge in the negatively charged ion sublattice -3, form (No) ' center.Be necessary to point out, this formation thing (No) ' be not very stable, strong reaction can take place in it when fluorescent material high temperature is synthetic.We once proposed to add the method for ZrN or HfN: add ZrN or HfN in the fluorescent material composition, form paired point defect immediately.This fluorescent material is when preparation, and the characteristics of its hot-work treatment process have been added zirconium nitride or hafnium nitride just in fluorescent material.
In the fluorescent material composition, add zirconium nitride or hafnium nitride, oxide raw material is carried out hot-work handle in high temperature and reducing gas.The characteristics of this operation are, add nitride HfN and/or the ZrN or their the equivalent molecule mixture of IV family in raw material, are placed in 1520~1700 ℃ the stove to heat 4~8 hours, and the density of hydrogen in the stove is 2~5% of nitrogen-hydrogen mixed gas.
As mentioned above, negative charge N in the negatively charged ion sublattice -3Ionic content is 0.001≤[N]≤0.1.Point defect equilibrium equation in positively charged ion and the negatively charged ion sublattice is: (Me IV Ln) °+(Si Al) °=2 (No) ', specifically for each element of IV family, its equation is:
(Zr Ln)°+(Si Al)°=2(No)
(Hf Ln)°+(Si Al)°=2(No)
The standard synthesis method of garnet phosphor powder has a lot, according to synthesis method, uses rare earth oxide Gd 2O 3, Y 2O 3, CeO 2, Lu 2O 3, Tb 4O 7, the aluminum oxide of formation negatively charged ion sublattice, even solid-phase catalyst is as the raw material of fluorescent material.Solid-phase catalyst can be accelerated from aluminium oxide Al 2O 3With single aluminate LuAlO 3Form garnet in the mixture.Its response formula is:
3LuAlO 3+Al 2O 3→Lu 3Al 5O 12
Usually use barium fluoride BaF 2And AlF 3As this catalyzer.
The original reagent of part can be changed, and for example, the available hydrogen oxide compound replaces oxide compound in the sol-gel method, but at this moment its solid state reaction does not change.As mentioned above, should add ZrN and/or HfN in the fluorescent material composition that is proposed, even silicon oxide sio 2Food ingredient is as follows:
Gadolinium sesquioxide Gd 2O 3-0.6M (mole)
Yttrium oxide Y 2O 3-0.25M
Oxidation gold-plating Lu 2O 3-0.05M
Terbium sesquioxide Tb 4O 7-0.025M
Cerium oxide CeO 2-0.05M
Zirconium nitride ZrN-0.005M
Silicon oxide sio 2-0.01M
Aluminium oxide Al 2O 3-2.49M
Barium fluoride BaF 2-0.32M
The speed that batching is placed in the three-stage roll mill with 60 rev/mins stirred 1 hour, and the threading capacity is 0.8 liter a firm aluminium crucible then.Crucible is put in the stove of automatic transmission, at weak reducing gas (2% H 2+ 98% N 2) heated 6~8 hours down, furnace temperature remains on 1520~1620 ℃.Take out batching, be cooled to room temp, use hot hydrochloric acid soln (1: 1) pickling then, then wash with water again.The surface of fluorescent powder grain forms ZnOSiO 2Nanometer layer, ZnOSiO 2Be from ZnSO 47H 2O (1%) and Na 2SiO 3(1%) forms in the solution.Fluorescent powder grain is placed in the strainer filters, then T=120 ℃ down air-dry 2 hours Powdered until forming.It is vivid orange-yellow that the synthetic in this way fluorescent powder grain that makes is.
The spectrum of this fluorescent material and colorimetric performance can be measured with the spectral radiance analyser of three look companies (Sensing).The curve of spectrum that draws comprises:
-chromaticity coordinates x, y;
-chromaticity coordinates u, v;
The maximum value position of-the curve of spectrum;
-relative luminous intensity;
The half-wave of-the curve of spectrum is wide;
-radiating purity of color;
-colour temperature (° K);
-colour rendering index Ra;
-radiating predominant wavelength, λ Max
-color ratio K R, K G, K B
Fig. 1 is standard fluorescence powder (Y 0.75Gd 0.22Ce 0.03) 3Al 5O 12Radiation spectrum.The parameter comparison array of all samples is in above-mentioned table 1.By above-mentioned table 1 as can be seen, according to chromaticity coordinates, the radiation major part of this fluorescent material all is positioned on the orange-yellow sub-band, compares with standard samples, and its spectrum maximum value has moved
Figure A20081014739400231
The half-wave of the curve of spectrum is wide from λ 0.5=124nm is changed to λ 0.5=133nm.In addition, we observe, and compare with standard samples, and the colour temperature of this fluorescent material has changed 1700K, and luminous intensity is L=83~87%.Based on these data, and consider that the spectral radiance of this fluorescent material is positioned on λ=555~583nm, can be sure of that the synthetic orange fluorescent powder has very high photon output.Exceed much as sample No.3 and its photon output valve of No.4 standard samples than η=0.95.
The same with the spectrum of measuring the fluorescent material sample with the colorimetric performance, measure the granularity of fluorescent material with special instrument-laser particle size distribution tests instrument, even can determine the form of fluorescent powder grain with microscope.We find in the course of the work, the rounded shape of fluorescent powder grain.This point is very important, because when filling the fluorescent material conversion layer in heterojunction, the fluorescent powder grain of this form can not damage the surface of heterojunction.Fig. 7 a~f shows the wherein synoptic diagram of several particle displaing micro pictures of this fluorescent material sample respectively.The fluorescent material composition of this Fig. 7 a, b representative is the No.2 in the table 1.These particles are circular, part shape spherical in shape, and each particulate faceted pebble has all surpassed 12.
The fluorescent material that Fig. 7 c, d represent respectively is No.4.These particles are bigger than top two kinds of fluorescent powder grains.On the indivedual faces of particulate, can also see the vestige that pickling stays.All these particulate color and lusters all are yellow.Yellow is the peculiar color and luster of the cerium compound of garnet framework.
What Fig. 7 e, f represented is the solid phase synthesis fluorescent material sample of standard.These particles promptly without any faceted pebble do not have optical transparency yet.
The specific area of fluorescent powder grain is S=32000cm among Fig. 7 a, the b 2/ cm 3, the neutrality line diameter is 2.2≤d 50≤ 5 μ m, mean diameter is 4≤d Cp≤ 7 μ m.The tight zone that uses the fluorescent powder grain of this fineness to make does not have a large amount of perforation.The concentration of tight zone is the D=200 micron, and according to the weight method, the density of tight zone can reach p=4.0g/cm 3This phosphor material powder has high density like this rounded ball cone of this fluorescent powder grain has been described, and its optical transparency is very high.
Undoubtedly, this surface just as minute surface of fluorescent powder grain helps the lifting of its quantum output.Be necessary to point out that we find that the particle of all standard sampless all has pointy shred faceted pebble, the distortion in a large number of this particulate surface, reflection coefficient is not high.The form that the standard fluorescence powder particles is discussed out is impossible because in these particles in addition the none coating of particles be complete.
Pointed out that below the main function of fluorescent material proposed by the invention is to make warm white light light-emitting diode (LED).But the present invention also will propose other very important application direction.At first be to be used on the red scintillator, it can be used for detecting X ray and the gamma-radiation that sends from various radio isotope and material.Its principle of work is to absorb the x-ray photon primary energy to the transition of K layer.Main Gd + 3Ion produces the K-transition when ENERGY E=48.8KeV, the K-transition energy of terbium atom is E=52KeV, and the K-transition value maximum when energy is E=61.1KeV of the Lu atom in the fluorescent material composition.This has illustrated and has been used to detect intermediate energy by the scintillator that contains these compositions that propose (X ray of E=45~80KeV) is optimal.
Simultaneously, the fluorescent material of gadolinium-yttrium-gold-plating-terbium composition is highly suitable for the isotropic substance radiation Xe that detected energy is E=0.081KeV 133, even energy is the isotropic substance Kr of E=0.044KeV 79Detector based on this fluorescent material once repeatedly was used to attempt analyzing nuclear-response heap transuranium element (isotropic substance Am, Pr, U etc.), and had obtained good result.Must be pointed out that the yield of radiation of this fluorescent material is the monocrystalline CdWO of standard 41.8 times of technology sample are equal to and are used in scintillator best on the counter Laminographic and (come from Gd 2O 2SCePr) yield of radiation.
This fluorescent material also has characteristics to be, it is had an effect energetically with heat or ultracold neutron, and nuclear response Gd takes place 155+ n → Gd 159+ e+ γ.The thermal neutron that gadolinium absorbed reaches 40000 barns (b), is hundred times of receptivity of other element and isotropic substance Li, B, Gd etc.So fluorescent material is bound to be applied in this field in the near future.
But this fluorescent material that contains gadolinium, its application scale are the most still in the solid state light emitter field.The main framework of photodiode is based on InGaN (In-Ga-N) heterojunction (figure does not show), contains a large amount of quantum well, and heterojunction semiconductor is positioned in sapphire (or silicon carbide of monocrystalline) the heat conductor substrate.
There is spectrum transmodulator (figure does not show) at substrate surface, can be elementary blue-light excited by the heterojunction radiating.This spectrum transmodulator is distributed in the light-emitting area of heterojunction and side and all primary rays light with the uniform form of concentration and has an effect mutually.Photodiode proposed by the invention must possess such framework, because the light that goes out from the side-emitted of heterojunction reaches whole semi-conductive 40%.The duty factor of spectrum transmodulator depends on its thickness to a great extent, can change 60~95% heterojunction primary rays.
When the distribution that is centrosymmetric of spectrum transmodulator, concentration is even, and the thickness on each radiator plane and side is 100~200 microns, and Ga-In-N heterojunction semiconductor so proposed by the invention just has very high rotary light performance.
The important rotary light performance of this photodiode and spectrum transmodulator not only refers to the light transfer capability, also comprises the primary emission light of its porous necessity.When the parameter of warm white is x=0.45, during y=0.43, the transmittance of the spectrum transmodulator of this photodiode reaches 20% of elementary blue ray radiation.
The advantage of this photodiode also shows as its only warm white of launching except glow color has homogeneity, chromaticity coordinates is 0.41≤x≤0.45,0.40<y≤0.43 simultaneously, and colour temperature is 2800≤T≤3400K.This photodiode meets white light radiating standard, is optimum illuminations in the normal lighting.
In sum, photodiode of the present invention is except glow color has homogeneity, also show as its only warm white of launching, chromaticity coordinates is 0.41≤x≤0.45,0.40<y≤0.43 simultaneously, colour temperature is 2800≤T≤3400K, in addition, it more can create brighter, the light source that optical throughput is bigger, therefore, really can improve the shortcoming of known warm white light light-emitting diode (LED).
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when the change that can do a little and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.

Claims (12)

1. orange fluorescent powder, the rare earth aluminic acid salt that it has the garnet framework is characterized in that: added the compound of IV and V group element in this fluorescent material composition, the stoichiometric equation formula of this orange fluorescent powder is: (∑ Ln) 3-xMe IV xAl 5-ySi yO 12-(x+y)N X+y, wherein Ln=Y, Gd, Ce, Lu and Tb, Me IV=Zr and/or Hf, this stoichiometry index is: 0.001≤x≤0.1,0.001≤y≤0.1.
2. orange fluorescent powder as claimed in claim 1, it is luminous in the orange zone of spectrographic, and light emitting region is from 490~770nm, and the spectrum maximum value is λ Max〉=570nm, half-wave is wider than 120nm.
3. orange fluorescent powder as claimed in claim 1, the pass of its formed rare earth element positively charged ion sublattice is: ∑ Lu=mY+nGd+pCe+qLu+lTb, wherein, m+n+p+q+l=3-x.
4. orange fluorescent powder as claimed in claim 3 wherein defines f=m+n+p+q+l, and the concentration of contained rare earth element positively charged ion lattice is: Y:0.05≤m/f≤0.25; Gd:0.50≤n/f≤0.65; Ce:0.001≤p/f≤0.1; Lu:0.001≤q/f≤0.05; Tb:0.001≤l/f≤0.05.
5. orange fluorescent powder as claimed in claim 1, wherein this silicon ion Si + 4Content in the negatively charged ion sublattice is 0.001≤[Si]=y≤0.1 atomic fraction.
6. orange fluorescent powder as claimed in claim 1, wherein this IV family ion content in the positively charged ion sublattice is 0.001≤x≤0.1 atomic fraction.
7. orange fluorescent powder as claimed in claim 1, wherein the particle of this fluorescent material is slightly circle shape, and average particle size is 2.2≤d 50≤ 5 μ m.
8. orange fluorescent powder as claimed in claim 1, wherein the pattern of this fluorescent powder grain is the ball cone, the optical transparency height.
9. orange fluorescent powder as claimed in claim 1, it can be produced by in high temperature and weak reducing gas oxide raw material being carried out the hot-work processing, the characteristics of this method are: the nitride HfN and/or ZrN or their the equivalent molecule mixture that add IV family in raw material, be placed in 1520~1700 ℃ the stove and heated 4~8 hours, the density of hydrogen in the stove is the 2-5% of nitrogen-hydrogen mixed gas.
10. warm white light light-emitting diode (LED) that uses orange fluorescent powder as claimed in claim 1, it has the heterogeneous matrix of becoming of an In-Ga-N, contain a large amount of quantum well, and has a spectrum transmodulator, this photodiode is characterised in that: all luminous flat and the side of this spectrum transmodulator and heterojunction connect, this spectrum transmodulator is even with thickness, and the form that is centrosymmetric is distributed in this photodiode.
11. warm white light light-emitting diode (LED) as claimed in claim 10, wherein the thickness of this spectrum transmodulator is 100 to 250 microns.
12. warm white light light-emitting diode (LED) as claimed in claim 10, wherein the light that this photodiode sent has the warm white accent, and chromaticity coordinates is 0.41≤x≤0.43,0.39≤y≤0.420, and colour temperature is 2760≤T≤3500K.
CNA2008101473948A 2008-08-14 2008-08-14 Warm white luminous diode and orange fluorescent powder thereof Pending CN101323784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2008101473948A CN101323784A (en) 2008-08-14 2008-08-14 Warm white luminous diode and orange fluorescent powder thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2008101473948A CN101323784A (en) 2008-08-14 2008-08-14 Warm white luminous diode and orange fluorescent powder thereof

Publications (1)

Publication Number Publication Date
CN101323784A true CN101323784A (en) 2008-12-17

Family

ID=40187491

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008101473948A Pending CN101323784A (en) 2008-08-14 2008-08-14 Warm white luminous diode and orange fluorescent powder thereof

Country Status (1)

Country Link
CN (1) CN101323784A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102010715A (en) * 2010-10-21 2011-04-13 罗维鸿 Fluorescent powder for warm white LED
CN102079977A (en) * 2010-10-21 2011-06-01 罗维鸿 Fluorescent powder for warm white LED and gadolinium garnet thereof
CN102148320A (en) * 2010-09-29 2011-08-10 友达光电股份有限公司 White light emitting diode device, light emitting device and liquid crystal display
CN105255495B (en) * 2015-10-29 2017-08-29 华东师范大学 A kind of oxynitride fluorescent powder and preparation method and the white LED light source containing the fluorescent material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102148320A (en) * 2010-09-29 2011-08-10 友达光电股份有限公司 White light emitting diode device, light emitting device and liquid crystal display
CN102148320B (en) * 2010-09-29 2014-03-12 友达光电股份有限公司 White light emitting diode device, light emitting device and liquid crystal display
CN102010715A (en) * 2010-10-21 2011-04-13 罗维鸿 Fluorescent powder for warm white LED
CN102079977A (en) * 2010-10-21 2011-06-01 罗维鸿 Fluorescent powder for warm white LED and gadolinium garnet thereof
CN102010715B (en) * 2010-10-21 2013-06-05 罗维鸿 Fluorescent powder for warm white LED
CN102079977B (en) * 2010-10-21 2013-06-19 罗维鸿 Fluorescent powder for warm white LED and gadolinium garnet thereof
CN105255495B (en) * 2015-10-29 2017-08-29 华东师范大学 A kind of oxynitride fluorescent powder and preparation method and the white LED light source containing the fluorescent material

Similar Documents

Publication Publication Date Title
Liao et al. A red phosphor Mg3Y2Ge3O12: Bi3+, Eu3+ with high brightness and excellent thermal stability of luminescence for white light-emitting diodes
US9150785B2 (en) Red fluorescent materials and preparation methods thereof
CN101370906A (en) Phosphor converted light emitting device
TWI390012B (en) White light emitting diodes and their oxyfluoride phosphor powder
Qu et al. Novel and wide-ranging color tuning photoluminescence properties of Tb3+/Eu3+ doped garnet-type Li3Lu3Te2O12 phosphor: energy transfer and enhanced thermal stability
CN104818023B (en) Rare earth luminescent material preparation method and its product containing crystal defect renovation technique
Yu et al. A new eulytite-type Pb3Bi (PO4) 3: Eu3+ red-emitting phosphor: synthesis, structure and photoluminescence characteristics
CN104870607A (en) Yellow-green to yellow-emitting phosphors based on terbium-containing aluminates
CN101325238A (en) White light LED and lighting conversion layer thereof
Wang et al. Spectroscopic investigation of the novel orange-red phosphor Ca3La2W2O12: Sm3+ with the high color purity for w-LED applications
CN105219382B (en) Eu2+ Eu3+ codope fluoaluminate substrate fluorescent powders and its synthetic method and application
Sowjanya et al. Structural and luminescent properties of KY (1− x) DyxBO3 phosphors
CN101255338B (en) Warm-white semiconductor and yellow-orange luminescent silicate fluorescent powder thereof
Satpute et al. Role of rare-earth ions for energy-saving LED lighting devices
CN101323784A (en) Warm white luminous diode and orange fluorescent powder thereof
Yantake et al. Preparation of novel KAlSiO4: Ce3+ broadband cyan-emitting phosphors via partial cation substitution for applications in white-light LEDs
Du et al. A broadband yellow-green emitting mixed orthoborate–pyroborate phosphor, Ba 2 Sc 2 B 4 O 11: Ce 3+, for white light emitting diodes
JP2013507455A (en) Bismuth ion sensitized rare earth germanate luminescent material and method for producing the same
Wang et al. A novel orange-red Ba3MgTa2O9: Eu3+ phosphor synthesis and luminescence properties in WLEDs
CN112322292B (en) Eu3+Doped fluorescent material and preparation method thereof
CN101475800B (en) Fluorescent powder with gadolinium-lutetium-cerium as substrate and warm white light emitting diode using the same
CN105860971B (en) Rare earth ion doped zirconium niobate fluorescent powder and preparation method thereof
CN101323785B (en) White light luminous diode and fluorine oxide fluorescent powder thereof
US8153024B2 (en) Warm-white light-emitting diode and its orange phosphor powder
Parayil et al. Ultra-bright and thermally stable deep red emitting doped yttrium zirconate nanoparticles for tunable white LEDs and indoor plant growth

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: LUO WENYUAN

Free format text: FORMER OWNER: CHEN JIANYI ZHANG KUNLIN ZHANG WENTAI

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20100917

Address after: 1, building 18, block B, No. 1305, Lane 200231, Hua Jing Road, Shanghai, Xuhui District

Applicant after: Luo Weihong

Co-applicant after: Luo Wenyuan

Address before: 1, building 18, block B, No. 1305, Lane 200231, Hua Jing Road, Shanghai, Xuhui District

Applicant before: Luo Weihong

Co-applicant before: Chen Jianyi

Co-applicant before: Zhang Kunlin

Co-applicant before: Zhang Wentai

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20081217