CN101320218A - Three scanning type silicon slice focusing and leveling measurement apparatus, system and method - Google Patents
Three scanning type silicon slice focusing and leveling measurement apparatus, system and method Download PDFInfo
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Abstract
The invention provides a three-scanning type silicon chip focusing and leveling measurement device, a system and a method thereof. The device can be applied to the focusing and leveling system of the projection photo-etching machine; the three-scanning type silicon focusing and leveling measurement device is composed of a lighting unit, a projecting unit, an imaging unit and a detecting unit; wherein, the projecting unit projects a slit or a slit array on the surface of a silicon chip, and forms a laser spot or a spot array; the detecting unit comprises a first, a second and a third detecting units; beams emitted by the imaging unit enters a digital controller after being treated by the phase sensitive demodulation by the first, the second and the third detecting units separately; the result of the phase sensitive demodulation is treated by the digital controller and thus the result of focusing and leveling measurement is generated. The three-scanning type silicon chip focusing and leveling measurement device has large effective linear region, low optical design difficulty and relatively compact structure.
Description
Technical field
The present invention relates to a kind of focusing and leveling measurement apparatus and method, particularly a kind ofly be used to measure the silicon chip surface specific region with respect to the height of the best focal plane of projection objective and the focusing and leveling measurement apparatus and the method for degree of tilt.
Background technology
In the projection lithography device, in order to carry out high-precision measurement in the position to silicon chip surface, for fear of measurement mechanism damage silicon chip, it must be non-contact measurement that focusing and leveling is measured simultaneously, and promptly device itself does not directly contact testee.Contactless focusing leveling measuring method commonly used has three kinds: optical measuring method, capacitance measurement and barometry.
See also Fig. 1, wherein shown optical exposure system plane principle schematic.As shown in the figure, under the irradiation of illuminator 100, light source exposes the image projection on the mask 220 to silicon chip 420 by projection objective 310.Mask 220 is by mask platform 210, and silicon chip 420 is by work stage 410 supportings.In Fig. 1, a silicon slice focusing and leveling measurement apparatus 500 is arranged between projection objective 310 and silicon chip 420, rigid attachment is carried out in this device and projection objective 310 or projection objective supporting 300, be used for the positional information on silicon chip 420 surfaces is measured, measurement result is sent to silicon chip surface position control system 560, after the calculating through signal Processing and focusing and leveling amount, the position that drives 430 pairs of work stage 410 of focusing and leveling actuator is adjusted, and finishes the focusing and leveling of silicon chip 420.
The ray machine part of silicon slice focusing and leveling measurement apparatus generally is made up of lighting unit, projecting cell, image-generating unit and probe unit, and wherein projecting cell is projected in silicon chip surface with slit (array), and forms measurement hot spot (array).
In the scanning projection lithographic equipment of prior art, use optical measuring method to realize the focusing and leveling measurement, the technology of optical focusing leveling measurement apparatus is varied more.Wherein, Nikon company adopts the technology based on the scanning reflection mirror modulation, specifically referring to the early stage patent US4558949 of the U.S., be disclosed on Dec 17th, 1985, the technical scheme that this patent of invention disclosed is to use scanning reflection mirror that measuring-signal is modulated, and then use phase demodulation that the electric signal after the opto-electronic conversion is carried out demodulation, thereby acquisition and silicon chip surface height be electric signal one to one, this technical scheme has solved the lower problem of measuring-signal signal to noise ratio (S/N ratio) well, but also has following some deficiency simultaneously:
(1) effectively the linearization zone is limited.
The signal that goes out through phase demodulation for the signal of scanning reflection mirror sweep frequency same frequency, the intensity of this signal has directly reflected the height of current silicon chip surface, but be between the intensity of this signal and the silicon chip surface altitude signal and be similar to sinusoidal variation tendency, when the side-play amount of measuring spot center and detection slit center is increasing, the sensitivity of measurement mechanism is low more, and its repeatable accuracy is also low more.When the side-play amount of measuring spot center and detection slit center was half of detecting module measurement hot spot direction of scanning width, the sensitivity of measurement mechanism was zero.Therefore, during normal use, general a certain section of only using such sinusoidal curve centre.
(2) improve the visual field that measurement range often needs to increase optical system.
As mentioned above, the effective linearization of this measurement mechanism zone is limited, often needs to increase the measurement hot spot and surveys the size of slit on the direction of scanning thereby will improve measurement range.When multimetering, (adopt 49 hot spots as the present type of Nikon, specifically see " Higher NA ArF scanning exposure tool on newplatform for further 100nm technology node ", Proc.SPIE, the 4346th phase of calendar year 2001, the 651st～658 page), the visual field of optical system certainly will also will be done greatly, and this will make the more difficult control of optical system imaging quality, and optical texture will be huger also.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of three scanning type silicon slice focusing and leveling measurement apparatus, system and method, described device has bigger effective linearization zone, and the optical design difficulty is little, the structure relative compact.
For achieving the above object, the invention provides a kind of three scanning type silicon slice focusing and leveling measurement apparatus, be applied in the focusing and leveling system of projection mask aligner, described three scanning type silicon slice focusing and leveling measurement apparatus is made up of lighting unit, projecting cell, image-generating unit and probe unit, described projecting cell is projected in silicon chip surface with slit or slit array, form and measure hot spot or spot array, wherein, described probe unit comprises first, second and the 3rd sub-probe unit; The light beam of described image-generating unit outgoing is undertaken entering a digitial controller behind light signal modulation and the phase demodulation by first, second and the 3rd sub-probe unit respectively, and the focusing and leveling measurement result is handled and produced to described digitial controller to the result of above-mentioned phase demodulation.
Further, the order propagated by light path corresponding to described slit or slit array of described the first/the second/the 3rd sub-probe unit is provided with successively: the first/the second/the 3rd scanning reflection mirror or reflection mirror array, the first/the second/3rd surveys slit or surveys slit array, the first/the second/the 3rd energy-probe or energy-probe array and the first/the second/the 3rd electric signal processing links.
The light beam of described image-generating unit outgoing incides on described first scanning reflection mirror or the reflection mirror array after reflecting through one first spectroscope, through then inciding on one second spectroscope after described first spectroscope refraction, light through described second spectroscope reflection incides on described second scanning reflection mirror or the reflection mirror array, and the light after described second spectroscope refraction incides on described the 3rd scanning reflection mirror or the reflection mirror array; Light transmission described first after described first scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and incides on described first energy-probe or the energy-probe array, light transmission described second after described second scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and incides on described second energy-probe or the energy-probe array, and the light transmission the described the 3rd after described the 3rd scanning reflection mirror or reflection mirror array scanning is surveyed slit or surveyed slit array and incides on described the 3rd energy-probe or the energy-probe array; The electric signal of described first energy-probe or the output of energy-probe array enters the described first electric signal processing links and carries out the electric signal processing, the electric signal of described second energy-probe or the output of energy-probe array enters the described second electric signal processing links and carries out the electric signal processing, and the electric signal of described the 3rd energy-probe or the output of energy-probe array enters described the 3rd electric signal processing links and carries out the electric signal processing.
When the height of described silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range forward, just in time be near the central area of effective range of the described second sub-probe unit; When the height of described silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range negative sense, just in time be near the central area of effective range of described the 3rd sub-probe unit.
In above-mentioned three scanning type silicon slice focusing and leveling measurement apparatus, described the first/the second/the 3rd electric signal processing links is carried out phase demodulation by producing a square-wave signal to the electric signal of described the first/the second/the 3rd energy-probe or energy-probe array output; Wherein, carry out the scan-synchronized signal that the employed square-wave signal of phase demodulation is first scanning reflection mirror or reflection mirror array in the described first electric signal processing links, carry out the scan-synchronized signal that the employed square-wave signal of phase demodulation is second scanning reflection mirror or reflection mirror array in the described second electric signal processing links, carry out the scan-synchronized signal that the employed square-wave signal of phase demodulation is the 3rd scanning reflection mirror or reflection mirror array in described the 3rd electric signal processing links.
Correspondingly, the invention provides a kind of three scanning type silicon slice focusing and leveling measuring system, it is made up of at least two above-mentioned three scanning type silicon slice focusing and leveling measurement apparatus, adopts mode in parallel or that connect to interconnect between described device and the device.
Correspondingly, the present invention also provides a kind of three scanning type silicon slice focusing and leveling measuring method, by a projecting cell with at least one slit projecting at silicon chip surface, form at least one measurement hot spot, described method comprise the following steps: (1) adopt respectively first, second and the 3rd sub-probe unit to described at least one measurement hot spot via an image-generating unit after the light beam of outgoing carry out phase demodulation, and output correspondent voltage value; (2) judge that the magnitude of voltage of described first sub-probe unit output is whether between the forward and negative sense critical value of the first sub-probe unit effective range, draw the focusing and leveling measurement result if then directly use the magnitude of voltage of the described first sub-probe unit output to carry out interpolation/match numerical evaluation, otherwise enter step (3); (3) judge whether to satisfy simultaneously: the magnitude of voltage of the described first sub-probe unit output is greater than the forward critical value of the described first sub-probe unit effective range, and the magnitude of voltage of the described second sub-probe unit output is between the forward and negative sense critical value of the described second sub-probe unit effective range, draw an intermediate result if then use the magnitude of voltage of the described second sub-probe unit output to carry out interpolation/match numerical evaluation, otherwise enter step (5); (4) on the basis of the intermediate result that step (3) obtains, one first constant that superposes obtains final focusing and leveling measurement result, described first constant is for when the height of silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range forward, and the described first sub-probe unit output is exported poor through height value that interpolation/the match numerical evaluation obtains through height value that interpolation/the match numerical evaluation obtains and the described second sub-probe unit; (5) judge whether to satisfy simultaneously: the magnitude of voltage of the described first sub-probe unit output is less than the negative sense critical value of the described first sub-probe unit effective range, the magnitude of voltage of the described the 3rd sub-probe unit output is between the forward and negative sense critical value of the described the 3rd sub-probe unit effective range, draw an intermediate result if then use the magnitude of voltage of the described the 3rd sub-probe unit output to carry out interpolation/match numerical evaluation, otherwise newspaper outrange information; (6) on the basis of the intermediate result that step (5) obtains, one second constant that superposes obtains final focusing and leveling measurement result, described second constant is for when the height of silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range negative sense, and the described first sub-probe unit output is exported poor through height value that interpolation/the match numerical evaluation obtains through height value that interpolation/the match numerical evaluation obtains and the described the 3rd sub-probe unit.
Compared with prior art, three scanning type silicon slice focusing and leveling measurement apparatus of the present invention has following advantage: effectively the linearization zone is big, it is the visual field of same optical system, onesize spot size, onesize detection slit sizes, the present invention but can obtain about half as much again in effective linearization zone; The optical design difficulty is little, the structure relative compact promptly will realize onesize effective linearization zone, and three scanning type silicon slice focusing and leveling measurement apparatus of the present invention only needs to design the optics visual field about half size, image quality control difficulty declines to a great extent, and one-piece construction is also compact.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 has shown optical exposure system plane principle schematic;
Fig. 2 has shown the general structure synoptic diagram of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention;
Fig. 3 has shown the structural representation of probe unit of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention;
Fig. 4 has shown the control flow graph of electric signal processing unit of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention;
Fig. 5 has shown the control flow graph of digitial controller of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention;
Fig. 6 has shown the characteristic curve of the focusing and leveling measurement apparatus of prior art;
Fig. 7 has shown the characteristic curve of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention.
Embodiment
Below with reference to a preferred embodiment three scanning type silicon slice focusing and leveling measurement apparatus of the present invention, system and method are described in further detail.Need to prove that mainly in probe unit, so in the present embodiment, the present invention has done to simplify to lighting unit, projecting cell and image-generating unit and handled summary of the invention of the present invention.In addition, more clear in order to make the present invention, single slit only is discussed in the present embodiment, the situation of single measurement hot spot, and for multimetering, principle of the present invention is suitable equally, only needs that the discrete component in the probe unit is replaced with element arrays and gets final product.
See also Fig. 2, be the general structure synoptic diagram of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention.Measuring light 510 forms on silicon chip surface 420 and measures hot spot 421 through first catoptron 520, projection slit 525, second catoptron, 530 backs.After silicon chip surface 420 reflections, after 540 reflections of the 3rd catoptron, enter probe unit 560, the magnitude of voltage V of probe unit 560 output three-channel parallels
Out1, V
Out2And V
Out3After the magnitude of voltage of this three-channel parallel enters digitial controller 590, by digitial controller 590 further make a strategic decision and calculate after draw last measurement result.
Fig. 3 is the structural representation of probe unit of a preferred embodiment of three scanning type silicon slice focusing and leveling measurement apparatus of the present invention.The light that incides probe unit from image-generating unit enters the first sub-probe unit after by 561 reflections of first spectroscope, and the first sub-probe unit is surveyed slit 563, first energy-probe 564 and the first electric signal processing links 565 by first scanning reflection mirror 562, first and formed; Enter the second sub-probe unit by the measuring light after 561 refractions of first spectroscope after 571 reflections of second spectroscope, the second sub-probe unit is surveyed slit 573, second energy-probe 574 and the second electric signal processing links 575 by second scanning reflection mirror 572, second and is formed; Enter the 3rd sub-probe unit by the measuring light after the refraction of second spectroscope 571 after via 581 reflections of the 4th catoptron, the 3rd sub-probe unit is surveyed slit 583, the 3rd energy-probe 584 and the 3rd electric signal processing links 585 by the 3rd scanning reflection mirror the 582, the 3rd and is formed.Measuring hot spot 421 imaging before first surveys slit is the first measurement laser image spot 422, measurement hot spot 421 imaging before second surveys slit is the second measurement laser image spot 423, and measuring hot spot 421 imaging before the 3rd surveys slit is the 3rd measurement laser image spot 423.
Comparatively debuging of precision need be carried out in three sub-probe unit positions each other, and the linearity is regional preferably separately so that accurately and fully utilize three sub-probe units.For the precision that guarantees to debug, before beginning to debug, guarantee that earlier these three scanning reflection mirrors stop scanning and are parked in its zero phase place always.Motion work stage then 410 finds a position to make to win the measuring light spot to survey the center unification of slit 563 as 422 center and first.Keep the invariant position of work stage 410, carry out debuging of the second sub-probe unit and the 3rd sub-probe unit.The target of finally debuging is second center of measuring laser image spot 423 with second side-play amount of surveying the center of slit 573 is second to measure half of laser image spot 423 width or second survey half of slit 573 width, and the 3rd center of measuring laser image spot 424 and the 3rd side-play amount of surveying the center of slit 583 are wide half of the second measurement laser image spot 424 or half of the second detection slit width 583; Second measures the direction that slit 573 off-centrings are surveyed at laser image spot 423 centers and second, and the direction of surveying slit 583 off-centrings with the 3rd measurement laser image spot 424 centers and the 3rd is just in time opposite.After above-mentioned debuging, when the height of silicon chip in the measuring light spot region is positioned at the critical potential of the first sub-probe unit effective range forward (negative sense), just in time be near the central area of effective range of the second sub-probe unit; When the height of silicon chip in the measuring light spot region is positioned at the critical potential of the first sub-probe unit effective range negative sense (forward), just in time be near the central area of effective range of the 3rd sub-probe unit.
The principle of work of three sub-probe units is just the same, and the sweep frequency of three scanning reflection mirrors is also identical, for convenience of description, supposes that the sweep frequency of scanning reflection mirror is 1f, and the sweep frequency that doubles scanning reflection mirror is 2f.Be example with the first sub-probe unit below, further specify the principle of work of probe unit.The effect of first scanning reflection mirror 562 is that light signal is modulated, it scans picture of measuring hot spot, then first measures laser image spot 422 and enters first and survey the also variation of inciding behind the slit 563 on first detector, 564 light-sensitive surfaces of generating period of area.Promptly when silicon chip surface is positioned at certain fixed position, the electric signal that the first signal Processing link 565 is accepted is the AC signal of a high frequency, it is main by the signal of 1f frequency and 2f frequency mainly, and the intensity of 1f frequency signal then directly can be used to characterize silicon chip surface 420 at the height value of measuring hot spot 421 zones.In order to obtain the wherein intensity of 1f signal, can adopt the phase demodulation technology to carry out, promptly as shown in Figure 4.The first electric signal processing links 565 mainly is made up of 1f bandpass filter 565c, multiplier 565d and low-pass filter 565e, and wherein, 1f bandpass filter 565c is used for leaching the electric signal V of first energy-probe output
In1In the 1f signal.The signal that enters multiplier 565d also must have the scan-synchronized signal of first scanning reflection mirror 562, and this signal is necessary for square wave, and frequency must be 1f, so that realize the function of phase-locked amplification.
If the magnitude of voltage V of step 592 first electric signal processing links output
Out1Forward critical value V greater than the first sub-probe unit effective range
Pc, and the magnitude of voltage V of second electric signal processing links output
Out2At the second sub-probe unit effective range V
Nc≤ V
Out2≤ V
PcWithin, then enter step 594b, use the magnitude of voltage V of second electric signal processing links output
Out2Carry out numerical evaluation such as interpolation/match and draw a result and enter step 595a, otherwise enter step 593.
If the magnitude of voltage V of step 593 first electric signal processing links output
Out1Negative sense critical value V less than the first sub-probe unit effective range
Nc, the magnitude of voltage V of the 3rd electric signal processing links output
Out3At the 3rd sub-probe unit effective range V
Nc≤ V
Out3≤ V
PcWithin, then enter step 594c, use the magnitude of voltage V of the 3rd electric signal processing links output
Out3Carry out numerical evaluation such as interpolation/match and draw a result and enter step 595b, otherwise enter step 596.
Suppose that in the present embodiment the first measurement laser image spot 422, second is measured laser image spot 423, the width of the 3rd measurement laser image spot 424 in the direction of scanning is 1mm, simultaneously first survey that slit 563, second is surveyed slit 573 and the 3rd slit width of surveying slit also is 1mm, the gain-adjusted in the first electric signal processing links 565, the second electric signal processing links 575 and the 3rd electric signal processing links 585 makes signal V
Out1, V
Out2And V
Out3Maximum is no more than 8.5V.
Fig. 6 and Fig. 7 are respectively the characteristic curve of the related device of prior art and present embodiment, its horizontal ordinate is for measuring the start offset amount between hot spot inconocenter and the slit center, promptly when the phase place of the scanning motion of scanning reflection mirror be 0 degree or 180 when spending, measure the side-play amount between hot spot inconocenter and the slit center.Under identical mechanical-optical setup, if require to use the zone of the above sensitivity of 0.015 volt/micron, prior art can only be measured positive and negative approximately about 300 microns variation, and present embodiment then can be measured positive and negative approximately about 600 microns variation, is the measurement range of about 2 times of prior aries.And prior art then needs to increase the size of hot spot and detection slit as reaching the same characteristic curve of the present invention, and in multimetering, this will make the optical design difficulty increase, and structure will be huger also.
Three scanning type silicon slice focusing and leveling measurement apparatus of the present invention, can use separately according to actual needs, also can be used in combination, promptly adopt a plurality of said apparatus to link to each other to form the three scanning type silicon slice focusing and leveling measuring system, so that satisfy different user demands with the form of in parallel or series connection.
Of particular note, three scanning type silicon slice focusing and leveling measurement apparatus of the present invention is not limited to the structure defined in the foregoing description, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement the present invention, and not breaking away from the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (7)
1, a kind of three scanning type silicon slice focusing and leveling measurement apparatus, be applied in the focusing and leveling system of projection mask aligner, described three scanning type silicon slice focusing and leveling measurement apparatus is made up of lighting unit, projecting cell, image-generating unit and probe unit, described projecting cell is projected in silicon chip surface with slit or slit array, form and measure hot spot or spot array, it is characterized in that: described probe unit comprises first, second and the 3rd sub-probe unit; The light beam of described image-generating unit outgoing is undertaken entering a digitial controller behind light signal modulation and the phase demodulation by first, second and the 3rd sub-probe unit respectively, and the focusing and leveling measurement result is handled and produced to described digitial controller to the result of above-mentioned phase demodulation.
2, three scanning type silicon slice focusing and leveling measurement apparatus according to claim 1 is characterized in that: the order that described the first/the second/the 3rd sub-probe unit is propagated by light path corresponding to described slit or slit array is provided with successively: the first/the second/the 3rd scanning reflection mirror or reflection mirror array, the first/the second/3rd surveys slit or surveys slit array, the first/the second/the 3rd energy-probe or energy-probe array and the first/the second/the 3rd electric signal processing links.
3, three scanning type silicon slice focusing and leveling measurement apparatus according to claim 2 is characterized in that:
The light beam of described image-generating unit outgoing incides on described first scanning reflection mirror or the reflection mirror array after reflecting through one first spectroscope, through then inciding on one second spectroscope after described first spectroscope refraction, light through described second spectroscope reflection incides on described second scanning reflection mirror or the reflection mirror array, and the light after described second spectroscope refraction incides on described the 3rd scanning reflection mirror or the reflection mirror array;
Light transmission described first after described first scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and incides on described first energy-probe or the energy-probe array, light transmission described second after described second scanning reflection mirror or reflection mirror array scanning is surveyed slit or is surveyed slit array and incides on described second energy-probe or the energy-probe array, and the light transmission the described the 3rd after described the 3rd scanning reflection mirror or reflection mirror array scanning is surveyed slit or surveyed slit array and incides on described the 3rd energy-probe or the energy-probe array;
The electric signal of described first energy-probe or the output of energy-probe array enters the described first electric signal processing links and carries out the electric signal processing, the electric signal of described second energy-probe or the output of energy-probe array enters the described second electric signal processing links and carries out the electric signal processing, and the electric signal of described the 3rd energy-probe or the output of energy-probe array enters described the 3rd electric signal processing links and carries out the electric signal processing.
4, three scanning type silicon slice focusing and leveling measurement apparatus according to claim 3, it is characterized in that: when the height of described silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range forward, just in time be near the central area of effective range of the described second sub-probe unit; When the height of described silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range negative sense, just in time be near the central area of effective range of described the 3rd sub-probe unit.
5, three scanning type silicon slice focusing and leveling measurement apparatus according to claim 2 is characterized in that: described the first/the second/the 3rd electric signal processing links is carried out phase demodulation by producing a square-wave signal to the electric signal of described the first/the second/the 3rd energy-probe or energy-probe array output; Wherein, carry out the scan-synchronized signal that the employed square-wave signal of phase demodulation is first scanning reflection mirror or reflection mirror array in the described first electric signal processing links, carry out the scan-synchronized signal that the employed square-wave signal of phase demodulation is second scanning reflection mirror or reflection mirror array in the described second electric signal processing links, carry out the scan-synchronized signal that the employed square-wave signal of phase demodulation is the 3rd scanning reflection mirror or reflection mirror array in described the 3rd electric signal processing links.
6, a kind of three scanning type silicon slice focusing and leveling measuring system is characterized in that: comprise at least two three scanning type silicon slice focusing and leveling measurement apparatus as claimed in claim 1, adopt mode in parallel or that connect to interconnect between described device and the device.
7, a kind of three scanning type silicon slice focusing and leveling measuring method, by a projecting cell with at least one slit projecting at silicon chip surface, form at least one measurement hot spot, it is characterized in that described method comprises the following steps:
(1) adopt respectively first, second and the 3rd sub-probe unit to described at least one measurement hot spot via an image-generating unit after the light beam of outgoing carry out phase demodulation, and output correspondent voltage value;
(2) judge that the magnitude of voltage of described first sub-probe unit output is whether between the forward and negative sense critical value of the first sub-probe unit effective range, draw the focusing and leveling measurement result if then directly use the magnitude of voltage of the described first sub-probe unit output to carry out interpolation/match numerical evaluation, otherwise enter step (3);
(3) judge whether to satisfy simultaneously: the magnitude of voltage of the described first sub-probe unit output is greater than the forward critical value of the described first sub-probe unit effective range, and the magnitude of voltage of the described second sub-probe unit output is between the forward and negative sense critical value of the described second sub-probe unit effective range, draw an intermediate result if then use the magnitude of voltage of the described second sub-probe unit output to carry out interpolation/match numerical evaluation, otherwise enter step (5);
(4) on the basis of the intermediate result that step (3) obtains, one first constant that superposes obtains final focusing and leveling measurement result, described first constant is for when the height of silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range forward, and the described first sub-probe unit output is exported poor through height value that interpolation/the match numerical evaluation obtains through height value that interpolation/the match numerical evaluation obtains and the described second sub-probe unit;
(5) judge whether to satisfy simultaneously: the magnitude of voltage of the described first sub-probe unit output is less than the negative sense critical value of the described first sub-probe unit effective range, the magnitude of voltage of the described the 3rd sub-probe unit output is between the forward and negative sense critical value of the described the 3rd sub-probe unit effective range, draw an intermediate result if then use the magnitude of voltage of the described the 3rd sub-probe unit output to carry out interpolation/match numerical evaluation, otherwise newspaper outrange information;
(6) on the basis of the intermediate result that step (5) obtains, one second constant that superposes obtains final focusing and leveling measurement result, described second constant is for when the height of silicon chip in the measuring light spot region is positioned at the critical potential of the described first sub-probe unit effective range negative sense, and the described first sub-probe unit output is exported poor through height value that interpolation/the match numerical evaluation obtains through height value that interpolation/the match numerical evaluation obtains and the described the 3rd sub-probe unit.
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Cited By (2)
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| CN105700296A (en) * | 2014-11-26 | 2016-06-22 | 上海微电子装备有限公司 | Silicon chip surface height and gradient detection apparatus and method thereof |
| CN107024185A (en) * | 2016-01-29 | 2017-08-08 | 上海微电子装备有限公司 | A kind of basal surface type measuring method and measurement apparatus |
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| CN105700296A (en) * | 2014-11-26 | 2016-06-22 | 上海微电子装备有限公司 | Silicon chip surface height and gradient detection apparatus and method thereof |
| CN105700296B (en) * | 2014-11-26 | 2019-04-30 | 上海微电子装备（集团）股份有限公司 | Silicon chip surface height and gradient detection device and method |
| CN107024185A (en) * | 2016-01-29 | 2017-08-08 | 上海微电子装备有限公司 | A kind of basal surface type measuring method and measurement apparatus |
| CN107024185B (en) * | 2016-01-29 | 2020-08-25 | 上海微电子装备（集团）股份有限公司 | Method and device for measuring basal surface |
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| CN101320218B (en) | 2010-08-25 |
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