CN101315514A - Mask plate and matching method of photo-etching machine nesting precision using mask plate - Google Patents
Mask plate and matching method of photo-etching machine nesting precision using mask plate Download PDFInfo
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- CN101315514A CN101315514A CNA2007100415762A CN200710041576A CN101315514A CN 101315514 A CN101315514 A CN 101315514A CN A2007100415762 A CNA2007100415762 A CN A2007100415762A CN 200710041576 A CN200710041576 A CN 200710041576A CN 101315514 A CN101315514 A CN 101315514A
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Abstract
The invention provides a mask used for lithography process and a matching method used for debugging the alignment precision of a lithography machine by adopting the mask, relating to the semiconductor field. The mask provided by the invention is provided with two or more than two different alignment marks. The lithography machine adopting the mask is provided with an alignment system module and a correction alignment system control module which are matched with the alignment marks of the mask. When the alignment precision is debugged, an alignment system module matched with a wafer alignment mark is started according to the alignment mark of a test wafer to align the matched alignment marks of the mask for lithography; a matching test is carried out for the lithography graph, and if the alignment precision cannot meet the specification, the data of the correction alignment system control module is adjusted; the matching test is carried out circularly till the alignment precision reaches the specification. Compared with the prior art, the invention can effectively shorten debugging period and enhance the finished-product rate.
Description
Technical field
The present invention relates to the manufacturing technology of semiconductor applications, specifically, relate to and a kind ofly be used for the mask of lithographic process and use the alignment precision of this mask mode litho machine method that is complementary.
Background technology
The wafer manufacturing comprise the FEOL flow process (Front end ofline, FEOL) and the last part technology flow process (Backend ofline, BEOL).In order to enhance productivity or the restriction of enterprise self hardware condition, some enterprise (hereinafter to be referred as " provider ") only carries out the FEOL flow process to wafer and makes semi-manufacture, and the semi-manufacture that some enterprise (hereinafter to be referred as " manufacturer ") then buys other enterprises carry out the last part technology flow process and are processed into finished product.Different providers usually can adopt dissimilar litho machines in the FEOL process to wafer, the alignment methods of different litho machines and alignment mark are different, and therefore, the alignment mark of the wafer of different providers and position are different.FEOL and last part technology alignment precision are that alignment precision (Overlay) is high more, and the yield rate of wafer is just high more, and therefore, for manufacturer, the control alignment precision is the problem of a sternness.
In addition, for manufacturer with how tame provider, the wafer semi-manufacture of each different providers of conversion (FEOL processing procedure), all needing to change with provider uses identical litho machine to debug alignment precision in FEOL, repeatedly adjust data and test repeatedly, up to specification until alignment precision.Adopt existing method and existing mask to have a strong impact on the production efficiency of litho machine.
Therefore, need provide a kind of new mask, to overcome above-mentioned defective.
Summary of the invention
The technical matters that the present invention solves is to provide a kind of can shorten the be complementary mask of time of debugging alignment precision effectively.
For solving the problems of the technologies described above, the invention provides a kind of new mask, this mask has at least two kinds of dissimilar alignment marks, and dissimilar alignment marks is complementary with different alignment system respectively.
The present invention also provides the matching process of the mask photo-etching machine nesting precision that a kind of use has at least two kinds of dissimilar alignment marks, and this method comprises the steps: to provide described mask with at least two types of alignment marks; Litho machine is provided, and it has alignment system module and the revisal alignment system control module that is complementary with the mask alignment mark; Provide several to have the test wafer of dissimilar alignment marks; According to the alignment mark of each test wafer, start alignment system module corresponding with it, align with the alignment mark that is complementary on the mask, test wafer is carried out the litho pattern step; The litho pattern result is carried out matching test; If the alignment precision value of matching test gained falls short of specifications, to adjust the data of revisal alignment system control module and set up compensating value, matching test is carried out in circulation, and is up to specification until alignment precision.
Compared with prior art, adopt mask of the present invention not need to use the difference of litho machine type to change according to the wafer FEOL; Adopt matching process provided by the invention, can effectively save the match time of debugging alignment precision, and then played the beneficial effect that improves the finished product rate.
Embodiment
Below embodiments of the invention are described, can further understand purpose, specific structural features and the advantage of its invention.
The invention provides a kind of new mask, this mask has polytype alignment mark, and different type of alignment marks is positioned at the diverse location of mask, is complementary with different alignment systems.Making the type of mask alignment mark determines according to its usable range, for example, if wafer to be processed is divided into three kinds according to the litho machine that it carries out the use of FEOL flow process, because dissimilar litho machines have dissimilar alignment systems and alignment methods, therefore just need etch on the mask of the present invention respectively with wafer on three types of alignment marks mating of alignment mark.Adopt the mask of this type, do not need to change litho machine and mask, thereby saved the production time greatly, improved production efficiency according to the source of wafer to be processed is different.
Use above-mentioned mask only to need a kind of litho machine with multiple alignment mark.This litho machine setting by revisal alignment system control module, is revised the various data parameters of alignment system module by alignment system module with multiple alignment system and revisal alignment system control module.The alignment precision of described litho machine is to adopt following steps to mate mode: at first collect with mask on the data of all litho machine alignment systems of being complementary of alignment mark, data are imported respectively in the alignment system module of litho machine correspondence; Provide several to have the test wafer of different alignment marks; According to the alignment mark of test wafer, start the alignment system module that is complementary with it, test wafer is carried out lithography step; Carry out matching test then, the litho pattern parameters is carried out data analysis; If the alignment precision of matching test gained litho pattern falls short of specifications, according to the data deviation value, by the revisal alignment system control module of litho machine, adjust, revise data and preservation in the alignment system module, matching test is carried out in circulation then, and is up to specification until alignment precision.The litho machine that debugging is good just can adopt described this mask to produce in batches.Adopt this litho machine and mask, do not want a collection of wafer of every replacing and will carry out the alignment precision test again, not only guaranteed the alignment precision of product preferably, and saved the debugging alignment precision time, improved the yield rate of product.
Claims (2)
1, a kind of mask is characterized in that, this mask has at least two kinds of dissimilar alignment marks, and dissimilar alignment marks is complementary with different alignment system respectively.
2, a kind of use matching process of mask photo-etching machine nesting precision according to claim 1 is characterized in that this method comprises the steps:
Described mask with at least two types of alignment marks is provided;
Litho machine is provided, and it has alignment system module and the revisal alignment system control module that is complementary with at least two types of alignment marks of mask;
Provide several to have the test wafer of dissimilar alignment marks;
According to the alignment mark of each test wafer, start alignment system module corresponding with it, align with the alignment mark that is complementary on the mask, test wafer is carried out the litho pattern step;
The litho pattern result is carried out matching test;
If the alignment precision value of matching test gained falls short of specifications, to adjust the data of revisal alignment system control module and set up compensating value, matching test is carried out in circulation, and is up to specification until alignment precision.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100415762A CN101315514B (en) | 2007-06-01 | 2007-06-01 | Mask plate and matching method of photo-etching machine nesting precision using mask plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007100415762A CN101315514B (en) | 2007-06-01 | 2007-06-01 | Mask plate and matching method of photo-etching machine nesting precision using mask plate |
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| CN101315514A true CN101315514A (en) | 2008-12-03 |
| CN101315514B CN101315514B (en) | 2011-03-23 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102207689A (en) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | Alignment system and align mark precision extraction method of write-through lithography machine |
| CN102540735A (en) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | Check method of photomask diagram position deviation |
| CN102566255A (en) * | 2010-12-27 | 2012-07-11 | 北大方正集团有限公司 | Photomask for aligning exposure machine and photomask alignment mark production method |
| CN102043324B (en) * | 2009-10-22 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for evaluating overlay marker in development of new process |
| CN103365107A (en) * | 2012-04-11 | 2013-10-23 | 上海微电子装备有限公司 | Matching and calibrating method for multi-off-axis aligning system |
| CN103984210A (en) * | 2014-04-14 | 2014-08-13 | 中国电子科技集团公司第五十五研究所 | Method for realizing hetero-machine matched nested etching on GaAs wafer |
| CN111324004A (en) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | Mask and overlay error measuring method |
| CN112558430A (en) * | 2020-12-16 | 2021-03-26 | 上海华力微电子有限公司 | Photomask position matching device and matching method thereof, and photoetching machine |
-
2007
- 2007-06-01 CN CN2007100415762A patent/CN101315514B/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102043324B (en) * | 2009-10-22 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for evaluating overlay marker in development of new process |
| CN102540735A (en) * | 2010-12-08 | 2012-07-04 | 无锡华润上华科技有限公司 | Check method of photomask diagram position deviation |
| CN102566255A (en) * | 2010-12-27 | 2012-07-11 | 北大方正集团有限公司 | Photomask for aligning exposure machine and photomask alignment mark production method |
| CN102207689A (en) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | Alignment system and align mark precision extraction method of write-through lithography machine |
| CN102207689B (en) * | 2011-05-20 | 2013-03-13 | 合肥芯硕半导体有限公司 | Alignment system and align mark precision extraction method of write-through lithography machine |
| CN103365107A (en) * | 2012-04-11 | 2013-10-23 | 上海微电子装备有限公司 | Matching and calibrating method for multi-off-axis aligning system |
| CN103365107B (en) * | 2012-04-11 | 2015-05-13 | 上海微电子装备有限公司 | Matching and calibrating method for multi-off-axis aligning system |
| CN103984210A (en) * | 2014-04-14 | 2014-08-13 | 中国电子科技集团公司第五十五研究所 | Method for realizing hetero-machine matched nested etching on GaAs wafer |
| CN103984210B (en) * | 2014-04-14 | 2016-01-20 | 中国电子科技集团公司第五十五研究所 | A kind of method realizing different machine coupling alignment on GaAs disk |
| CN111324004A (en) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | Mask and overlay error measuring method |
| CN112558430A (en) * | 2020-12-16 | 2021-03-26 | 上海华力微电子有限公司 | Photomask position matching device and matching method thereof, and photoetching machine |
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|---|---|
| CN101315514B (en) | 2011-03-23 |
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