CN101311705A - Method for inspecting wafer defect - Google Patents
Method for inspecting wafer defect Download PDFInfo
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- CN101311705A CN101311705A CNA2007101050525A CN200710105052A CN101311705A CN 101311705 A CN101311705 A CN 101311705A CN A2007101050525 A CNA2007101050525 A CN A2007101050525A CN 200710105052 A CN200710105052 A CN 200710105052A CN 101311705 A CN101311705 A CN 101311705A
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- test piece
- ion beam
- wafer
- wafer defect
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- 230000007547 defect Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 14
- 238000001531 micro-dissection Methods 0.000 claims description 11
- 230000002950 deficient Effects 0.000 claims description 10
- 230000021615 conjugation Effects 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 101150060058 tag-335 gene Proteins 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
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Abstract
The invention relates to a method for detecting the defects of wafers and can detect the defects of the horizontal sections of a wafer sample through a double-particle beam focused ion beam micro cutting instrument. First of all, the wafer sample is cut into test pieces with suitable sizes to be able to suit an analyzing cavity of the double-particle beam focused ion beam micro cutting instrument, and then laser labels are marked at the edges of the test pieces to ensure the double-particle beam focused ion beam micro cutting instrument to set conjugated heights according to the laser labels so as to directly analyze the horizontal sections of the test pieces.
Description
Technical field
The present invention relates to a kind of method of inspecting wafer defect, and particularly relate to the method that the two particle beams focused ion beam micro-dissections instrument of a kind of use (dual beam Focus Ion Beam is called for short DBFIB) are analyzed wafer-level tangent plane defective.
Background technology
Generally speaking, two particle beams focused ion beam micro-dissections instrument are commonly used to carry out plumb cut (cross section) image analysing computer of wafer, DBFIB can use ion beam (Ion beam) and the plumb cut of electron beam (Electronic beam) to wafer to grind simultaneously and scan, therefore, can obtain image on each plumb cut.For tangible wafer defect on the plumb cut, it is quite convenient to utilize DBFIB to analyze.
But some wafer defect has different directivity, and for example the defective of DRAM wafer may be mainly horizontal distribution, therefore, if only use DBFIB to carry out plumb cut when analyzing, also is not easy to find out the position at its wafer defect place.Fig. 1 is the wafer tangent plane synoptic diagram according to known technology, and element is formed at the component side S1 of wafer 100.For convenience of description, the section that the present invention order is parallel to wafer 100 side S2 is a plumb cut, just square section (cross section), and the section that is parallel to wafer 100 component side S1 is horizontal section (horizontal cross section).Wherein, Fig. 1 (a) analyzes synoptic diagram for horizontal section, and Fig. 1 (b) analyzes synoptic diagram for plumb cut.If defect area DEF mainly is distributed on the horizontal section, then more not obvious by the shown defect area DEF that comes out on the square section, also be not easy to find out the defective position.
But for fear of machine-limited and wafer size, DBFIB can't do the setting and the image analysing computer of conjugation height to upright wafer, therefore can't directly use DBFIB to carry out the analysis of horizontal section.If use other analytical instrument, for example wear then the formula electron microscope (Transmission electron microscopy, TEM), just can't grind simultaneously and scan, just there is way to do image analysing computer after must grinding earlier or cut, therefore, convenient not as DBFIB in the use.
Summary of the invention
The present invention proposes a kind of method of inspecting wafer defect, utilizes particle beams focused ion beam micro-dissections instrument can carry out the image analysing computer of any angle to wafer, comprises the image analysing computer of horizontal section, improves the accuracy of analysis and the convenience of wafer defect.
The present invention proposes a kind of method of inspecting wafer defect, be applicable to two particle beams focused ion beam micro-dissections instrument, this method comprises the following steps: at first, the wafer sample is cut into the test piece of appropriate size, make it go for the image analysing computer of DBFIB, then indicate laser tag on the component side of test piece, the component side that makes test piece then is horizontal by showing upright angle so that carry out the image analysing computer of DBFIB.DBFIB is just according to laser tag, sets the conjugation height of electron beam and ion beam, at last, utilizes DBFIB to analyze the horizontal section image of test piece, to inspect the defective of this test piece.
In another embodiment of the present invention, above-mentionedly become in the step of test piece of appropriate size at the cut crystal sample, the width of wafer needs less than 4 millimeters (mm), and above-mentioned upright angle is 90 degree.
In another embodiment of the present invention, above-mentioned in the step of this horizontal section image of analyzing this wafer sample, also comprise the ion beam grinding rate of adjusting two particle beams focused ion beam micro-dissections instrument, make it between 30～50pA.
In another embodiment of the present invention, above-mentioned in the step of this horizontal section image of analyzing this test piece, also comprise the defective of inspecting this test piece with electron beam (E-beam).
The present invention utilizes laser tag, make DBFIB can do the setting of conjugation height at upright wafer, and carry out the image analysing computer of wafer-level tangent plane, utilize DBFIB can analyze the plumb cut and the horizontal section of wafer, and then improve the accuracy of wafer defect analysis and the discovery rate of product bug reason.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, the preferred embodiments of the present invention cited below particularly, and in conjunction with the accompanying drawings, be described in detail below.
Description of drawings
Fig. 1 is the wafer tangent plane synoptic diagram according to known technology
Fig. 2 is the method flow diagram according to the inspecting wafer defect of the embodiment of the invention
Fig. 3 changes synoptic diagram according to wafer embodiment illustrated in fig. 2.
The simple symbol explanation
100: wafer
S1: component side
S2: side
DEF: defect area
310: the wafer sample
320: test piece
340: ion gun
350: electron gun
335: laser tag
S210～S250: step
Embodiment
Fig. 2 is the method flow diagram according to the inspecting wafer defect of the embodiment of the invention, is applicable to two particle beams focused ion beam micro-dissections instrument.This method comprises the following steps: that at first step S210 cut crystal sample becomes the test piece of appropriate size, and the width X that for example makes test piece makes it go for the analysis cavity of DBFIB less than 4 millimeters (mm).Then, step S220 indicates laser tag in the component side of test piece, is generally the edge of its component side.Then, step S230 makes the component side of test piece horizontal by existing upright angle, in the cavity that is placed in DBFIB, then in step S240, DBFIB is according to laser tag, set the conjugation height of two particle beams focused ion beam micro-dissections instrument, just adjust the conjugation height of ion beam and electron beam.At last, in step S250, analyze the horizontal section image of test piece, to inspect the defective of test piece on horizontal section.
For more clearly demonstrating this method, cooperate the wafer diagram to be described as follows, please be simultaneously with reference to Fig. 2 and Fig. 3, Fig. 3 changes synoptic diagram according to wafer embodiment illustrated in fig. 2.At first, in step S210, wafer sample 310 is cut into test piece 320, and the size of test piece 320 then is applicable to the image analysing computer of carrying out horizontal section with DBFIB.In the present embodiment, have at least on one side need be less than 4 millimeters for the width of test piece 320.Then, in step S220, laser tag 335 is shown in the edge of test piece 320, then, in step S230, the component side that makes test piece 320 is horizontal by existing upright angle, this upright angle can be according to analyze demands, being set at arbitrarily angledly, is 90 degree in the present embodiment, i.e. vertical level.
After warming-up exercise is finished, promptly can begin the image analysing computer carried out with DBFIB.At first, the test piece 320 of well cutting is holded up with upright angle in the cavity that is placed in DBFIB, with the wafer surface that will analyze (being component side S1 in the present embodiment) towards ion gun (Ion gun) 340 and electron gun (Electron gun) 350.In step S240, according to laser tag 335, set the conjugation height (eccentric height) of ion gun 340 and electron gun 350, to proofread and correct ion beam and the active position of electron beam in test piece.And the position of laser tag 335 is preferably near the emphasis position of required analysis, like this than the place that is easier to find out test piece 320 defectives.At last, in step S250, progressively remove the surface of test piece 320 with ion gun 340, can be according to process conditions, the surface of test piece 320 is in layer removed (for example different metal level (metal), contact hole (contact), tie point (via)), and then analyze the surface of test pieces with electron gun 350, to produce the image of test piece 320 each layers, to inspect the defective of test piece 320.In the present embodiment, ion beam (Ionbeam) grinding rate of two particle beams focused ion beam micro-dissections instrument can be set at 30～50 micromicroamperes (pico-ampere, pA).
The present invention utilizes the mode that indicates laser tag, makes DBFIB can carry out the setting of conjugation height to upright test piece, to carry out the element defect analysis of any angle.Utilize this mode of operation, DBFIB not only can analyze the square section of test piece, also can analyze the horizontal section of test piece, not only improves the convenience of DBFIB, has also improved the speed and the accuracy of wafer analysis.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and modification, thus protection scope of the present invention with claims the person of being defined be as the criterion.
Claims (5)
1. the method for an inspecting wafer defect is applicable to two particle beams focused ion beam micro-dissections instrument, comprises the following steps:
The cut crystal sample becomes the test piece of appropriate size;
Indicate laser tag in the component side of this test piece;
This component side that makes this test piece is horizontal by existing upright angle;
According to this laser tag, set the conjugation height of this pair particle beams focused ion beam micro-dissections instrument; And
Analyze the horizontal section image of this test piece, to inspect the defective of this test piece.
2. the method for inspecting wafer defect as claimed in claim 1, wherein the cut crystal sample becomes in the test piece step of appropriate size, comprises that the width that makes this test piece is less than 4 millimeters.
3. the method for inspecting wafer defect as claimed in claim 1, wherein this upright angle is 90 degree.
4. the method for inspecting wafer defect as claimed in claim 1 wherein in the step of this horizontal section image of analyzing this test piece, comprises that also the ion beam grinding rate of adjusting this pair particle beams focused ion beam micro-dissections instrument is 30～50pA.
5. the method for inspecting wafer defect as claimed in claim 1 wherein in the step of this horizontal section image of analyzing this test piece, also comprises with electron beam and inspects this defective.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101050525A CN101311705A (en) | 2007-05-22 | 2007-05-22 | Method for inspecting wafer defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101050525A CN101311705A (en) | 2007-05-22 | 2007-05-22 | Method for inspecting wafer defect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101311705A true CN101311705A (en) | 2008-11-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101050525A Pending CN101311705A (en) | 2007-05-22 | 2007-05-22 | Method for inspecting wafer defect |
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| Country | Link |
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| CN (1) | CN101311705A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325708A (en) * | 2013-05-28 | 2013-09-25 | 上海华力微电子有限公司 | Wafer defect crosscutting observation device |
| CN106252248A (en) * | 2015-06-15 | 2016-12-21 | 台湾积体电路制造股份有限公司 | For the method making in semiconductor fabrication there is the wafer mapper of the charged particle beam of focusing |
| TWI569352B (en) * | 2014-06-26 | 2017-02-01 | Eo科技股份有限公司 | Marking method of wafer dies |
| CN113310758A (en) * | 2020-02-07 | 2021-08-27 | 台湾积体电路制造股份有限公司 | Method and device for preparing microscopic test piece and recording medium |
-
2007
- 2007-05-22 CN CNA2007101050525A patent/CN101311705A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325708A (en) * | 2013-05-28 | 2013-09-25 | 上海华力微电子有限公司 | Wafer defect crosscutting observation device |
| CN103325708B (en) * | 2013-05-28 | 2015-11-25 | 上海华力微电子有限公司 | Wafer defect crosscut observation device |
| TWI569352B (en) * | 2014-06-26 | 2017-02-01 | Eo科技股份有限公司 | Marking method of wafer dies |
| CN106252248A (en) * | 2015-06-15 | 2016-12-21 | 台湾积体电路制造股份有限公司 | For the method making in semiconductor fabrication there is the wafer mapper of the charged particle beam of focusing |
| CN106252248B (en) * | 2015-06-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | Make the method with the charged particle beam wafer mapper focused in semiconductor fabrication |
| CN113310758A (en) * | 2020-02-07 | 2021-08-27 | 台湾积体电路制造股份有限公司 | Method and device for preparing microscopic test piece and recording medium |
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Open date: 20081126 |