CN101308785B - Method of manufacturing CMOS devices by the implantation of doping material - Google Patents

Method of manufacturing CMOS devices by the implantation of doping material Download PDF

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CN101308785B
CN101308785B CN2008101114911A CN200810111491A CN101308785B CN 101308785 B CN101308785 B CN 101308785B CN 2008101114911 A CN2008101114911 A CN 2008101114911A CN 200810111491 A CN200810111491 A CN 200810111491A CN 101308785 B CN101308785 B CN 101308785B
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ion
cluster ion
energy
ion beam
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CN101308785A (en
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托马斯·N·霍尔斯基
达勒·C·雅各布森
韦德·A·克鲁尔
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Semequip Inc
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Abstract

An ion implantation system (10) is described for the implantation of cluster ions into semiconductoe substrates for semiconductor device manufacturing. A method of manufacturing a semiconductor deviceis described, wherein clusters of N-and P-type dopants are implanted to form the transistor in CMOS devices. For example, As4Hx+ clusters and either B10Hx or B10HX+ clusters are used as sources of Asand B doping, respectively, during the implants. An ion implantation system (10) is described for the implantation of cluster ions into semiconducteur substrates for semiconductor device manufacturing.

Description

Make the method for cmos device by implanting dopant material
The related application cross reference
The application's case is advocated to have precedence over and the right of advocate the U.S. Provisional Patent Application case the 60/392nd, No. 271 and the 60/391st, No. 847, and these two temporary patent application cases are all filed an application on June 26th, 2002.Present application for patent also advocate to have precedence over own together and coexist the application in U.S. patent application case the 10/244th, No. 617 (on September 16th, 2002 filed an application) and No. the 10/251st, 491, U.S. patent application case (on September 20th, 2002 filed an application).
Background of invention
Technical field
The present invention relates to a kind of ion implant system and a kind of semiconductor making method, it is used to implant bunch ion beam that constitutes and electronegative ion beam by N-type dopant cluster ion.
Background technology
The manufacturing of semiconductor device can partly relate to introduces impurity to form doped region in Semiconductor substrate.Selected impurity element should suitably combine the conductance that forms electric charge carrier and change semi-conducting material with semi-conducting material.Wherein, electric charge carrier both can be electronics (being produced by N-type dopant) and also can be hole (being produced by P-type dopant).The concentration of the dopant impurities of introducing can determine the conductivity in the zone that obtains thus.For forming transistor arrangement, insulation system and other these electronic structures (it is completely as semiconductor device), must form many these N-types and P-type extrinsic region.
The conventional method that is used for dopant is introduced Semiconductor substrate is to implant by ion.In ion is implanted, be to introduce a charging that contains required element in one ion source and introduce energy, thereby form the ion that contains dopant element (for example element 75As, 11B, 115In, 31P, or 121Sb) this charging ionization.Then, provide one to quicken battery and extract and positively charged usually ion is quickened, thereby form ion beam.Then, known as institute in the affiliated technical field, the material that desire is implanted is chosen in the service quality analysis, and with ion beam directive semi-conductive substrate.The electric field that quickens can make ion have kinetic energy, thereby ion can be infiltrated through in the target.Energy of ions and quality have determined it to infiltrate through the degree of depth in the target, and wherein energy of ions is bigger and/or quality is littler, its speed height of promptly can healing, thereby infiltrate through in the target darker.The ion implant system is configured to control meticulously the key variables of implanting in the technology, for example ion beam energy, ion beam quality, ion beam current (electric charge in the time per unit), and at the ion dose (infiltrating through total number of ions of per unit area in the target) at target place.In addition, for keeping finished semiconductor device product rate, also must control ion beam angular divergence (variation of the angle of ionic bombardment substrate) and ion beam space uniformity and scope.
Recently, it is found that implanting anion can be better than implanting cation, for example, referring to: D.C.Jacobson, Konstantin Bourdelle, H-J.Gossmann, M.Sosnowski, M.A.Albano, V.Babaram, J.M.Poate, Aditya Agarwal, " decaborane, a kind of alternative method (Decaborane, anAlternative approach to Ultra Low Energy Ion Implantation) that is used for the ultra-low energy ion implantation " (XIII international ion embedding technology meeting proceedings of IEEE of holding at Austrian Alpsbach in 2000) that Alex Perel and Tom Horsky are shown; " a kind of big electric current anion implant machine and in insulator, making the application (A High-Current Negative-Ion Implanter and its Application for:Nanocrystal Fabrication in Insulators) of nanocrystal " (XII international ion embedding technology meeting proceedings of IEEE that 22-26 day in June, 1998 holds at Japanese Kyoto, (1999) 342-345) that the people showed such as N.Kishimoto; N.Tsubouchi etc. " the low energy cation of mass separation and the ion beam of anion precipitation equipment characterize (BeamCharacterization of Mass-Separated; Low-Energy Positive and NegativeIons Deposition Apparatus) " (XII international ion embedding technology meeting proceedings of IEEE that 22-26 day in June, 1998 holds at Japanese Kyoto, (1999) 350-353) that the people showed; Reach " anion implanted prosthetics (Negative-Ion Implantation Technique) " (nuclear instrument among PhysicsResearch B 96 (1995) 7-12 and method (Nuclear Instruments andMethods)) that the people showed such as Junzo Ishikawa.The very important advantage that anion is implanted is to be reduced in the surface charging of being implanted the VLSI device that causes in the CMOS manufacturing by ion.Generally speaking, the big electric current of cation (being in the 1mA or the bigger order of magnitude) implantation meeting produces positive potential on other assemblies of gate oxide and semiconductor device, and this kind positive potential can surpass the damaging thresholding of gate oxide at an easy rate.When cation bump semiconductor device surperficial, its not only can electrodeposition one clean positive charge, but also liberate secondary electron simultaneously, thereby make the charge effect multiplication.Therefore, the equipment dealer of ion implant system has developed a kind of being used for and low-energy electron has been introduced the electric charge control device that reaches the precision on the device disk surfaces in the positively charged ion beam, promptly so-called submerged electron gun at implantation process.This kind submerged electronic system can be introduced its dependent variable in manufacturing process, and can't thoroughly eliminate the rate of finished products loss that causes because of surface charging.Along with semiconductor device becomes more and more little, transistorized operating voltage and gate oxide thickness also become more and more little, thereby can reduce the damaging thresholding in the semiconductor device manufacturing, cause rate of finished products to decrease.Therefore, for many preface technologies, anion implantation meeting more traditional cation aspect rate of finished products is implanted potential obvious improvement.Regrettably, this kind technology is not on sale as yet on the market, and in fact, just known to the author, anion is implanted and is not used to make integrated circuit as yet at present, even is not used for research and exploitation as yet.
The prior art anion source is to depend on so-called negative adsorptivity sputter rake.Wherein be that a heavy inert gas (for example xenon) is fed into a plasma source, form Xe by this plasma source +Ion.Xe +Ion is drawn to one at once and bears the sputtering target of back bias voltage after formation, this sputtering target has been coated with caesium steam or other suitable basic matterials.High energy X e +Ion can sputter away neutral target atom, because the caesium coating has the negatron adsorptivity, thereby some neutral target atom can pick up an electronics when leaving the target surface.In case be with negative electrical charge, target ion promptly can be by repulsion away from target, and can collect and be converged to a negative ion beam from ion source by the electrostatic ionic Optical devices.Although can use this kind method to produce semiconductor dopant ion (for example boron), yet, ionic current is often on the low side, the ion beam emittance is often bigger than normal, and the existence meeting of caesium steam causes wafer yield and makes us unacceptable risk, and this is because alkalinous metal is considered to the processing of meeting severe contamination silicon.Therefore, need have a kind of in commercial more feasible anion source technology.
In semiconductor fabrication process, especially be concerned about and in Semiconductor substrate, form the P-N knot.This requires to form adjacent N-type and P-type doped region.A general example that forms a knot is N-type dopant to be implanted one contained in the semiconductor regions of an equally distributed P-type dopant.In this situation, an important parameter is a junction depth, and it is defined as from N-type and P-type dopant has the degree of depth that the semiconductor surface of equal concentrations begins.This junction depth depends primarily on quality, energy and the dosage of the dopant of implanting.
An importance of modern semiconductor technology is constantly to littler, device evolution faster.This process is called scaled (scaling).Scaled is the promotion that is subjected to the continuous improvement progress of lithography process, and the continuous improvement progress of lithography process makes people can define more and more littler body in containing the Semiconductor substrate of integrated circuit.Formed at present a kind of well accepted scaled theory be used for instructing chip manufacturer suitably simultaneously (promptly at each technology node or scaled node place) change in the semiconductor device design size aspect all.Scaled technology is that junction depth is scaled to maximum effect of ion implantation technology, and this requirement shoals knot along with reducing of device size day by day.This requirement that shoals day by day can show as following requirement along with integrated circuit technique is scaled to make knot: all must reduce ion and implant energy in each scaled step.Recently, the required ion energy of many crucial implantation has been reduced to following degree: the conventional ion implant system that initial exploitation is used for the much higher ion beam of produce power can't provide required implantation effectively.These extremely shallow knots are called " super shallow junction (Ultra-ShallowJunctions) " or USJ.
When the ion beam line of extracting ion from ion source and passing the implantation machine subsequently transported ion, the limitation of conventional ion implant system under low ion beam energy situation was the most obvious.The ion extraction can be subjected to the constraint of Child-Langmuir relational expression, and the Child-Langmuir relational expression shows: the ion beam current density of being extracted is directly proportional with 3/2 power that extracts voltage (i.e. ion beam energy when extracting).Fig. 1 is the curve chart that concerns between an expression maximum institute extraction arsenic ion beam electronic current and the extraction voltage.For simplicity's sake, supposed only existence in the extraction ion beam 75The As+ ion.Fig. 1 shows that when reducing energy, extracting electric current can reduce rapidly.In traditional Ion Implantation Equipment, find that the energy of this " extracting limited " mode of operation is lower than about 10keV.When transporting low energy ion beam, also there is identical constraint.The energy of ion beam is lower, and its gait of march is promptly lower, thereby for a set value of ion beam current, each ion can more be close to together, that is ion concentration can increase.This can be found out that wherein J is that (unit is mA/cm to ion beam current density by relational expression J=nev 2), n is that (unit is cm to ion concentration -3), e is an electron charge (=6.02 * 10 -19Coulomb), v is average ion speed (unit is cm/s).Since the electrostatic force between each ion and its spacing from square be inversely proportional to, so the repulsive interaction under low-yield is much better than, thereby this can make divergence of ion beam.This kind phenomenon is called " ion beam amplifies (beam blow-up) ".Existing low-energy electron stream in the ion beam line of machine tends to be caught by positively charged ion beam thereby the space charge that helps to compensate during transporting amplifies although implant, yet ion beam still can occur amplifies, and the most remarkable when having electrostatic focusing lens, because electrostatic focusing lens tends to divest the compensate for electronic with high flowability of loose combination in ion beam.For the atom that arsenic (75 atomic mass units) etc. is laid particular stress on, because ion velocity can be slower than light atom under a set ion energy, thereby transporting of low energy light beam may be very difficult.Also there is very big extraction and transports difficulty for P-type dopant boron.The implantation energy of extremely low (for example being lower than 1keV) that some forward position technology is required and the following fact transport boron and become very difficult: from a typical BF 3The most of ion and the non-required ion that extract in the plasma of source and transport 11B +, but fragment ion (19F for example +And 49BF 2 +), these fragment ions can increase the average quality of the charge density and the ion beam that extracts.In the future that prospect VLSI semiconductor is made, existing these difficulties will together make the formation of USJ have challenge aspect big low energy As and the B electric current transporting.
A kind of equational method of above-mentioned Child-Langmuir of benefiting from is by containing the molecular ionization of related dopant but not the dopant atom ionization is increased mass of ion one, and example as shown in Figure 1a.By this kind mode, although the kinetic energy of molecule is bigger during transporting, yet, when entering substrate, molecule can split into its constituting atom, distribute thereby molecular energy is distributed according to atomic mass by each atom, thereby the implantation energy that makes dopant atom is far below its initial kinetic energy that transports.Consider below a dopant atom " X " is bonded to a group " Y " (for the purpose of demonstration, forming technology no matter whether " Y " can influence this device).If implanting ions XY +But not implant X +, XY then +Extraction and transport energy must be higher, the increase coefficient of this energy equals { (quality of XY)/(quality of X) }; This speed that can guarantee X remains unchanged.Because the described space charge effect of Child-Langmuir equation is superlinearity for ion energy hereinbefore, thereby the maximum ion electric current that can transport can increase.In history, use polyatomic molecule to solve the practice that low energy implants problem for known to the described technical field.One common example is to use BF when implanting low energy boron 2 +Molecule replaces B +This method is with the unstrpped gas BF of institute 3Be dissociated into BF 2 +Be used for implanting.By this kind mode, mass of ion is increased to 49 atomic mass units, extract and transport energy and for using single boron atom, almost increase to 5 times (promptly 49/11) thereby make.Yet after implantation, the energy of boron can be reduced to identical multiple (49/11).We notice, because the per unit electric charge only has a boron atom in ion beam, thereby this kind method can not reduce the current density of ion beam.In addition, this kind method also with fluorine atom with boron together in the implanted semiconductor substrate, yet people know that fluorine can show adverse effect to semiconductor device.
Also exist at present decaborane is used for the atomic ion technology that ion is implanted as polyatomic molecule, as people such as Jacobson at " decaborane; a kind ofly be used for the alternative method (Deca borane; an Alternative approach to Ultra Low Energy Ion Implantation) that ultra-low energy ion is implanted " (XIII international ion embedding technology meeting proceedings of IEEE of holding at Austrian Alpsbach, 300-303 page or leaf (2000)) reaching Yamada in reports in " the gas ion beam is for the application (Applicationof gas cluster ion beams for material processing) of material processed " (Materials Scienceand Engineering A217/218,82-88 page or leaf (1996)).In this kind situation, the particle of implanting is decaborane molecule B 10H 14Ion, it contains 10 boron atoms, thus be a boron atom " bunch ".This kind technology not only can increase mass of ion, and because decaborane ion B 10H x +The per unit electric charge has ten boron atoms, thereby for a set ionic current, it can enlarge markedly the implant dose rate.This is a kind of technology that has prospect of forming USJ P-type metal oxide semiconductor (PMOS) transistor and generally speaking be used to implant utmost point low-energy boron at silicon of being used for.Significantly reduce the electric current (when using decaborane ion, reducing a factor 10) that is carried in the ion beam and not only can reduce the space charge effect of ion beam, but also can reduce the disk charge effects.We know, by positive ion beam bombard caused disk charge especially gate oxide charging can be by destroying responsive gate pole insulation reduction device yield, thereby reduce very attractive for the USJ device manufacturing that extremely low gate pole threshold voltage must be provided day by day by this electric current that uses ion beam to realize.It should be noted that in the example that these two P-type molecules are implanted, is by only with institute's raw material ionization but not form ion by institute's raw material is gathered cluster.It shall yet further be noted that up to now, still untappedly go out a kind of technology that is used to make N-type molecular dopant ion that compares favourably.Can complementary metal oxide semiconductors (CMOS) (CMOS) be handled and successfully may greatly depended on feasible N-type in the future and whether P-type polyatom implanted prosthetics can obtain commercialization.Therefore, need to solve two tangible problems that semi-conductor industry is faced now: the poor efficiency problem that disk charging problem and low energy ion are implanted.
In history, Ion Implantation Equipment is divided into three kinds of fundamental types: big electric current is implanted machine, and medium current implants machine and high-energy is implanted machine.And ion beam is applicable to big electric current and medium current implantation technology.More specifically, present big electric current implantation machine is mainly used in formation transistorized low-yield, heavy dose of regional (for example drain electrode structure) and doped polycrystalline silicon gate pole.It typically is batch processing and implant machine, that is it can handle many disks that are installed on the rotating disk and ion beam keeps static.The high-current ion beam line often simply and to ion beam has big acceptance; Under low-yield and big current conditions, the ion beam at substrate place is often bigger, has a big angular divergence.Medium current is implanted machine and is comprised a succession (next disk whenever) process chamber usually, and it can provide a high dip function (for example reaching 60 degree from the substrate normal slope).For guaranteeing the uniformity of dosage, usually with electromagnetic mode along orthogonal direction ion beam on whole wafer.For satisfying coml implant dosage uniformity and repeatable requirement (requiring only deviation a few percent usually), ion beam should have excellent angle and spatially uniform (for example even angle of ion beam＜2 degree on the disk).In view of these requirements, be designed to provide excellent ion beam control with the medium current ion beam line, but that cost is an acceptance is limited.In other words, ion is subjected to the restriction of ion beam emittance by the efficiency of transmission of implanting machine.At present, in succession implantation machine with low (＜10keV) the energy ion beam that produces higher electric current (about 1mA) is a problem very much, cause for some more low-energy implantation (when for example forming source electrode and drain electrode structure in the CMOS technology ahead of the curve), the productivity ratio of disk can be low make us and can't accept.Under the low ion beam energy of each ion energy＜5keV, for machine (handling many disks of being installed on the rotating disk) is implanted in batch processing, also there is same transport issues.
Transport Optical devices although can design almost aberrationless ion beam, yet ion beam characteristic (spatial dimension, spatially uniform, angular divergence and even angle) depend primarily on the emittance character (i.e. ion beam character when extracting ion, it has determined to implant the machine Optical devices during from the ion source outgoing with focusing of ion beam and the scope that controls at ion beam) of ion source self.Transport energy and reduce electric current that ion beam carries and use ion beam to replace the monomer ion beam can improve ion beam, thereby obviously strengthen the outgoing of ion beam.Therefore, in semiconductor is made, need a kind of cluster ion and cluster ion source technology,, also on target, provide one through better focusing, more collimation and stricter controlled ion bundle so that except more effective dose rate and higher productivity ratio are provided.
Summary of the invention
One aspect of the present invention provides a kind of method of making semiconductor device, and this method can form the super shallow impurity doping region with N-type (promptly being led) conductance in Semiconductor substrate, and is to form with high production rate.
Another aspect of the present invention provides a kind of ion implant system and method, wherein with B 10H x -Form produce electronegative decaborane (B 10H 14) ion and it is implanted in semi-conductive substrate and form p-n junction.
Another object of the present invention provides a kind of method of making semiconductor device, and this method can be used As 0H x +Form (for N-type bunch, wherein n=3 or 4 and 0≤x≤n+2) and B 10Hx +Or B 10Hx -The N-type of form (for P-type bunch) and P-type bunch form N-type or the super shallow impurity doping region of P-type (promptly being led or the alms giver).
Another purpose of the present invention provides a kind of implantation As 3Hx +And As 4Hx +The method of the arsenic cluster ion of form, this method can form super shallow implantation zone of N conductivity type in semi-conductive substrate.
Another purpose of the present invention provides a kind of P that makes in the following way nH x +The method of the phosphorus cluster ion of form (wherein n equals 2,3 or 4, and x is in the scope of 0≤x≤6): with PH 3The unstrpped gas ionization will be mixed to finish the N-type in this phosphorus bunch implantation semi-conductive substrate subsequently.
Another purpose of the present invention provides a kind of B that makes in the following way nH x +The method of the boron cluster ion of form (wherein n equals 2,3 or 4, and x is in the scope of 0≤x≤6): with B 2H 6The unstrpped gas ionization will be mixed to finish the P-type in this boron bunch implantation semi-conductive substrate subsequently.
A further object of the present invention provides a kind of ion implant system that is used for producing the semiconductor devices, and it has been designed so that to form in semi-conductive substrate with cluster ion the super shallow impurity doping region of N or P conductivity type.
According to an aspect of the present invention, a kind of method of implanting cluster ion is provided, it comprises the steps: to provide a dopant atom or molecular source in a chamber, with dopant atom or group of molecules synthetic contain some dopant atoms bunch, these dopant cluster ions are changed into the dopant cluster ion, use electric field extraction dopant cluster ion and make its acceleration, ion beam is carried out quality analysis, then the dopant cluster ion is implanted in the semi-conductive substrate.
An object of the present invention is to provide a kind of following method: by implant one by n dopant atom (at As 4Hx +N=4 under the situation) constitute bunch but not implant a single atom at every turn, make manufacturers of semiconductor devices can improve the difficulty that when extracting low energy ion beam, exists.Because each atom in bunch is all implanted with the energy of an E/n, thereby this kind cluster ion method for implantation provides the equivalent method of low-yield monatomic implantation.Therefore, the implantation machine is with the high n of more required implantation energy extraction voltage power supply doubly, and this can realize higher ion beam current, is especially forming under the required low implantation energy of USJ.Consider the The ion extraction stage,, can implant the relative improvement that is realized to cluster ion and quantize by estimation Child-Langmuir limit value.It should be understood that but this limit value approximate representation is:
(1)J max＝1.72(Q/A) 1/2V 3/2d -2，
J wherein MaxUnit be mA/cm 2, Q is a charge states, and A is mass of ion (unit is AMU), and V is for extracting voltage (unit is kV), and d is gap width (unit is cm).Fig. 1 one is using 75As +And the curve chart of equation under the d=1.27cm situation (1).In practice, can make the used extraction Optical devices of many ion implants near this limit value.By expansion equation (1), can define following index and count Δ, so that being implanted, cluster ion quantizes with respect to the productivity ratio of monatomic implantation or the increment of implant dose rate:
(2)Δ＝n(U n/U 1) 3/2(m n/m 1) ·1/2.
Herein, Δ be with energy U 1(U wherein 1=eV) to carry out a quality be m 1The monatomic implantation of atom compare, with an energy U nImplant one have n related dopant atom bunch the time dose rate (atom/second) that obtains relative raising amount.Make the dopant implantation depth identical with monatomic (n=1) situation if adjust Un, then equation (2) is reduced to:
(3)Δ＝n 2。
Therefore, implanting a bunch dose rate that is provided that is made of n dopant atom might be than traditional high n of monatomic implantation 2Doubly.At As 4Hx +Under the situation, for little x, this PDR raising amount is about 16 times.Fig. 2 has shown low energy As and As 4Comparison between the implantation is to explain this.
Use and bunch to carry out ion and implant the transport issues that also can solve low energy ion beam.It should be noted that cluster ion implantation technology only requires each cocooning tool that an electric charge is arranged, but not as in the conventional situation, making each dopant atom all have an electric charge.Owing to the diversity Coulomb force can reduce along with the reduction of charge density, thereby this can improve and transports efficient (beam transmission).In addition, the quality of ion cluster is higher than monomer whose, therefore more is not vulnerable to the influence of Coulomb force in the ion beam.Therefore, use by n dopant atom constitute bunch but not use single atom to implant can to improve the basic transport issues of low energy ion in implanting, and realize the obvious higher technology of a productivity ratio.
For realizing this method, need to form described cluster ion.Compare with producing monomer, used conventional source only produces a minimum part in the commercially available Ion Implantation Equipment mainly be lower-order (for example n=2) bunch, thereby these implantation machines can't realize effectively that above listed low energy ion beam implants advantage.In fact, the strong plasma that provided of many conventional ion source is with molecule on the contrary and bunch is dissociated into it and constitutes element.And novel ion source as herein described has been owing to used one " soft " ionization technology (i.e. the electronic impact ionization of being undertaken by the high energy primary electron), thereby can produce sufficient cluster ion.Ion source of the present invention clearly is designed for and produces and keep the dopant cluster ion.
Description of drawings
To be easy to understand these and other advantage of the present invention with reference to hereinafter explanation and accompanying drawing, in the accompanying drawing:
Fig. 1 is that a demonstration is according to Child-Langmuir law maximum 75As +The curve chart that concerns between ion beam current and the extraction energy;
Fig. 1 a is that a demonstration can be by the curve chart of the contrast between the maximum extracted electric current of tetramer arsenic and the acquisition of monomer arsenic;
Fig. 2 is the simplicity of illustration of cluster ion source of the present invention;
Fig. 2 a is the stereogram of an exemplary embodiment of cluster ion source of the present invention;
Fig. 2 b is the side sectional view of an ionogenic part shown in Fig. 2 a, and it is superimposed with electron beam and magnetic field above showing ion source;
Fig. 2 c be shown in the three-dimensional cutaway view of an ion source part, it shows according to magnetic field of the present invention and electron beam source;
Fig. 2 d is the vertical view of the simplification in the ionogenic electron beam forming area of the present invention territory;
Fig. 2 e is the calcspar of a temperature control system that can be used in combination with the present invention;
Fig. 3 is the simplicity of illustration of an exemplary cluster ion implant system of the present invention;
Fig. 4 a one is presented at and forms the graphic of a CMOS manufacturing sequence during the NMOS drain extension;
Fig. 4 b one is presented at and forms the graphic of a CMOS manufacturing sequence during the PMOS drain extension;
Fig. 5 is the graphic of semi-conductive substrate in the technology of making the NMOS semiconductor device, and it is in the N-type drain extension implantation step;
Fig. 5 a is the graphic of semi-conductive substrate in the technology of making the NMOS semiconductor device, and it is in the source/drain implantation step;
Fig. 5 b is the graphic of semi-conductive substrate in the technology of making the PMOS semiconductor device, and it is in the P-type drain extension implantation step;
Fig. 5 c is the graphic of semi-conductive substrate in the technology of making the PMOS semiconductor device, and it is in the source/drain implantation step;
Fig. 6 is the PH that a demonstration is produced by ion source of the present invention 3Mass spectral graphic;
Fig. 7 is the AsH that a demonstration is produced by ion source of the present invention 3Mass spectral graphic;
Fig. 8 is the As in the low energy range on the demonstration disk 4H x +The schematic diagram of ionic current;
Fig. 9 is the schematic diagram that a demonstration converts the described data of Fig. 6 of ion beam brill to;
Figure 10 is that a use the present invention is with AsH x +And As 4H x +After in the ion beam implanted silicon disk, the curve chart that the arsenic concentration SIMS that implanted distributes, and with the contrast of TRIM result of calculation;
Figure 11 is a B who uses ion source of the present invention to produce 2H 6Mass spectral curve chart;
Figure 12 one uses the curve chart of the positive ion mass spectrum that is write down under the decaborane raw material situation in the present invention;
Figure 13 one uses the curve chart of the negative ion mass spectrum that is write down under the decaborane raw material situation in the present invention;
Figure 14 is the two a mass spectral curve chart of a continuous recording anion and cation decaborane, and also shows dimer B 20H x
Figure 15 is a negative B who uses the present invention to implant under the decaborane implantation energy of 20keV 10H xIon and positive B 10H xThe curve chart that the SIMS of ion distributes;
Figure 16 one has implanted the curve chart that SIMS distributes when implanting the 20keV decaborane in silicon, and it shows B concentration and H concentration;
Figure 17 is an expression ionization cross section sigma and an ammonia (NH 3) electron energy T between the curve chart of functional relation;
Figure 18 is the mass spectrum of the positive decaborane ion of use ion source generation of the present invention;
Figure 19 is the mass spectrum of the negative decaborane ion of use ion source generation of the present invention.
Embodiment
A plurality of embodiment of the present invention hereinafter will be provided.These embodiment relate to and make various N-types and P-type dopant cluster ion and electronegative ion beam.N-type and P-type dopant cluster ion and electronegative ion beam the two all can use the ion source shown in Fig. 2-2e to produce.
Fig. 2-2e shows the concept map of a cluster ion source 10 and each assembly thereof.At first, provide a unstrpped gas source of supply 11, for example one bottle of AsH referring to Fig. 2 3, PH 3, B 2H 6Or vaporized B 10H 14Raw material can at room temperature be stored in the gas cylinder with gas form, perhaps can be used as from heated solids distillation or from the steam form of liquid phase volatilization to introduce.Unstripped gas body source 11 is connected to a chamber 13 by a flow controller 12.Flow controller 12 both can be accurate to one by computer-controlled mass flow controller, also can be simply to a tube connector with a predetermined gas conducting amount.Under latter event, change flow by the gas pressure of controlling in 11.The raw-material flow of gaseous state that control contains dopant promptly can form a stable air pressure in chamber 13, for example this air pressure is between about 3 * 10 -4Torr and 3 * 10 -3Between the torr.Ionization energy 14 is to provide with a form with controlled electron stream of a predetermined energy or speed.Usually, the temperature with chamber 13 and in fact ionogenic all component all is controlled to a desirable value.By source pressure, temperature, electron stream and electron energy are regulated, can in chamber 13, form an environment, this environment makes AsH 3Dopant atom or molecular combinations form the cluster ion that contains more than a required dopant element atom, for example tetramer compd A s 4H x +, wherein x is a integer between 0 and 4.
Hole 17 in the chamber 13 can escape in the ion beam path ion, is extracted by a chamber 13 and a highfield that extracts between the electrode 15 then.This extraction or accelerating field are produced by a high-voltage power supply, this high-voltage power supply with chamber 13 relatively current potential be biased into a voltage V, wherein extract closely current potential of electrode 15.This accelerating field can attract cation go out chamber 13 when setting up forward, and when expectation obtains anion, then sets up this accelerating field on oppositely.Extracting electrode 15 makes the ion through quickening form an ion beam 16.The kinetic energy of ion beam 16 is represented by equation (14):
(4)E＝/qV/。
Wherein V is the current potential in source, and q is the electric charge of each ion.When V with volt represent, when q represents with the unit of charge, the unit of E is electronics-volt (eV).
The ion source that constitutes the part of ion implant system of the present invention is an electronic impact formula ion source.Fig. 2 a is the ionogenic generalized section of a present invention, and it shows the structure and the function of each assembly that constitutes ion source 10.This section is to dissect along a plane that comprises the ion beam direction of propagation, thereby with ion source in two.Ion source 10 is included in a gasifier 28 and the ion beam that a mounting flange 36 places combine and forms zone 12.Ion source 10 is made as find time vacuum chamber or the gas technology instrument that connects an Ion Implantation Equipment by a mounting flange 36 Jie.Therefore, the part that is in flange 36 right sides in Fig. 2 a intermediate ion source 10 is in high vacuum state (pressure＜1 * 10 -4Torr).Gaseous material is introduced in the chamber 44, therein by from the electronic impact of one or more electron beam 70a and 70b with the gas molecule ionization, wherein one or more electron beam 70a and 70b enter chamber 44 by a pair of opposed electron beam inlet hole 71a and 71b.Use this structure, promptly can form ion near a The ion extraction aperture 81 places in the The ion extraction orifice plate 80.Then, use an extraction electrode (not shown) that is positioned at The ion extraction orifice plate 80 fronts to extract these ions and it is formed a high energy ion beam.
There are various gasifiers 28 to be applicable to the present invention.One exemplary gasifier 28 is shown among Fig. 2 a.This gasifier 28 is an exemplary gasifier, and it can be used to carry Solid State Source raw material 29 (decaborane B for example by a gasifier body 30 and 10H 14) crucible 31.Resistance heater can embed in the gasifier body 30.Water-cooling groove 26 and convection type air cooling groove 27 can be configured to closely contact gasifier body 30, are used to crucible 31 that a uniform working temperature that is higher than room temperature is provided.Heat conduction between the gasifier body 30 that crucible 31 and temperature are controlled is to realize that by the gases at high pressure in a gas supply source 41 introducing one crucible-these body interfaces of gasifier 34 temperature of gasifier body 31 is then monitored by a thermocouple by one.Decaborane B after the gasification 10H 14Or other gasification materials 50 are collected in the headroom, a crucible town 51, and after passing gasifier outlet opening 39, passing a pair of isolating valve 100 and 110, and be contained in steam conduit 32 in the source piece 35, enter chamber 44 by a vapour inlet hole 33.Also can with isolating valve 100,110, mounting flange 36, and the temperature of source piece 35 be controlled to and be close to or higher than the gasifier temperature, in case vapour condensation.
The ion source plenum system can comprise from two independent sources being two conduits of chamber 44 air feed.First source can be one and has the low conductive path of minor diameter, is used for from a high-pressure air source (a for example gas cylinder (not shown)) gaseous state raw material.Second source can be from a high conductance path from a low temperature gasification device.Regardless of source of the gas, this plenum system all can be kept one and for example count the air pressure of torr in the least in chamber 44.Gasifier 28 keeps strict temperature control to surface of its contact solid-state material, keeps stable and and then in this indoor maintenance pressure stable so that flow into the gas flow of chamber.
Before maintenance gasifier 28, isolating valve 110 can cut out so that ion source and Ion Implantation Equipment remain in vacuum state.Also isolating valve 100 can cut out so that steam 50 keeps being contained in the crucible 31.Then, gasifier 28 can be transported to safely a chemical cleaning groove, crucible 31 is feeded or cleaned.Before Open valve 100, can open an intrinsic ventilation valve 111 that is soldered to valve 100, so that the crucible space is under the atmospheric pressure.In case maintenance finishes, get final product valve-off 100 again, and by valve 100 being connected to valve 110 gasifier 28 is mounted on the ion source 10, then ventilation valve 111 is connected to a roughing line, to extract the dead space between crucible 31 and valve 100 and the valve 110 out vacuum.Then, can open isolating valve 110 when needed, this can not destroy the vacuum environment of ion source and Ion Implantation Equipment.
One gasifier assembly 30a is heated by one and is cooled off body 30 and a movable crucible 31 constitutes.Can touch crucible 31 by an end plate (not shown) of removing on gasifier 28 backs.After autopneumatolysis device 28 moves down crucible 31, can be sealed to the crucible cover 34b of crucible end and mention comb grid that are used to isolate solid 29 by removing with elastomeric material, come crucible 31 is feeded again.After refilling material, crucible 31 inserted in the gasifier bodies 30 and the outlet opening 39 in gasifier body 30 fronts is carried out vacuum seal, so that headroom, crucible town 51 is isolated with the heat-conducting gas that is present in this body interface of crucible-gasifier 34.For realizing the temperature homogeneity of crucible 31, the mechanical engagement between crucible 31 and the gasifier body 30 is for closely cooperating.Any gap between crucible 31 and the gasifier body 30 all can be filled with gas, is beneficial to the heat transmission between these two surfaces.Heat-conducting gas enters described gap by an end plate joint 28a, and can be in or near atmospheric pressure.
Can use (for example) that temperature control is implemented in ratio-integral differential (PID) closed-loop control that can be embedded in the resistive element in the gasifier body 30.Fig. 2 e shows the calcspar of a preferred embodiment, wherein defines three temperature provinces: corresponding to the zone 1 of gasifier body 30, corresponding to the zone 2 of isolating valve 100 and 110, reach the zone 3 corresponding to source piece 35.Each zone all can have a nonshared control unit, for example an Omron E5CK digitial controller.In the simplest situation, heating element self promptly is used for controlling on one's own initiative temperature and is higher than room temperature, for example between 18 ℃ and 200 ℃.Therefore, the cartridge type resistance heater can be embedded in gasifier body 30 (heaters 1) and the source piece 35 (heater 3), valve 100,110 can be twined with silicone band heater (heater 2, wherein resistive element is silk or paper tinsel band) simultaneously.Three thermocouples (being designated TC1 in Fig. 2 e, TC2 and TC3) can be embedded in each assembly in these three assemblies 30,35,100, and read continuously by each temperature controller in three special-purpose temperature controllers.Temperature controller 1,2 and 3 respectively by user program to temperature set-point SP1, SP2 and SP3.In one embodiment, these temperature set-points must make SP3＞SP2＞SP1.For example, be 30 ℃ if expectation makes the gasifier temperature, then SP2 can be 50 ℃, and SP3 can be 70 ℃.The working method of controller is generally: when TC value of feedback and set point were inconsistent, the comparator of controller can start cooling as required or add hot work.For example, if only use heating to change temperature, then if not TC1＜SP1, comparator output will be zero.Controller can comprise one about the looking into table of the nonlinear function between power output and the temperature difference SP1-TC1, and presents appropriate signals to the heater power source of controller, so that temperature is adjusted to the set-point value of being programmed smoothly.A kind of usual method that changes heater power is that power supply is carried out pulse-width modulation; This kind technology be used in full scale 1% and 100% between carry out power adjustments.These PID controllers can remain on temperature set-point (deviation) in 0.2 ℃ usually.
For keeping temperature homogeneity, the gasifier bulk material that can select to have high-termal conductivity.Can use the air groove on the outer surface that is positioned at gasifier body 30 wittingly gasifier body 30 to be applied a little heat leak (Fig. 2 a), to improve control system stability and to reduce the sedimentation time.Air groove 27 hides around gasifier body 30 and by plate (not shown).Can air be delivered to one by conduit and be integrated in each groove in the collecting pipe system in the end plate 38, so that the continuous convection current cooling of appropriateness to be provided.Air is sent into by inlet after being used to control the metering valve of flow through one.At last, air enters the room exhaust outlet from the air assembly.
Outside the deacration cooling, also can take measures to use liquid to come gasifier body 30.For example, can be that cooling agent is carried with pipeline in 6mm and the aperture of running through gasifier body 30 back and forth by one for example 1 meter long, diameter.Can connect by the joint that is mounted on the body port 26.Liquid cools can make the gasifier assembly cool off fast, thereby the time between overhauls(TBO) fast can be provided when needed.
Can gas feed be gone in the chamber 44 by a gas conduit 33 (for example from a gas cylinder).As indicated above, solid-state raw material can gasify in gasifier 28, and then, steam can be fed in the chamber 44 by steam conduit 32.As indicated above, the temperature control of gasifier body 30 can make the solid-state raw material 29 that are positioned at porous segregator barriers 34a below remain in a constant temperature.The steam 50 that is gathered in the headroom 31, town was presented boring 39 and break valve 100 and 110, was fed into chamber 44 by the steam conduit 32 that is arranged in source piece 35 then.Therefore, the material of gaseous state and solid-state band dopant all can obtain ionization by this ion source.
Fig. 2 b is a side sectional view, and it shows the basic optical design of a multi electron beam ion source structure of the present invention.In one embodiment of this invention, a pair of be heated white-hot filament 110a and the 110b that spatially separates launches a pair of electron beam 70a and the 70b that spatially separates, this to electron beam 70a and 70b bundle guide field or magnetostatic field B 135a and 135b (along one perpendicular to shown in the direction of paper plane) effect under, at first pass the substrate 105a and the 105b of a pair of substrate aperture 106a and 106b and pair of spaced along one 90 degree tracks, pass a pair of electron impact hole 71a and 71b then and enter chamber 44.One tunnel electronics that passes chamber 44 (promptly pass electron impact hole 71a and 71b the two) bends towards a pair of reflector barricade 102a and 102b under the effect of bundle guide field or magnetostatic field 135a and 135b.When electron beam 70a and 70b propagate when passing substrate aperture 106a and 106b, by applying a voltage Va to substrate 105a and 105b (providing) and apply voltage Ve, electron beam 70a and 70b were slowed down before injecting chamber 44 to white-hot filament 135a and 135b (providing) by negative sense power supply 116 by forward power supply 115.Forming and transport in the zone (promptly chamber 44 outside) at ion beam makes electron beam energy keep fully being higher than to carry out the common required energy of ionization most important, this is because under more low-yield situation, and space charge effect can seriously reduce beam electronic current and increase beam diameter.Therefore, in this zone, expectation remains between 1.5keV and the 5keV electron beam energy.
All voltages are benchmark with chamber 44 all.For example, if Ve=-0.5kV and Va=1.5kV, then the energy meter of electron beam is shown e (Va-Ve), and wherein e is an electron charge (6.02 * 10 -19Coulomb).Therefore, in this example, electron beam 70a or the 70b energy when formation and deflection is 2keV, but is entering electron impact hole 71a, and behind the 71b, its energy only is 0.5keV.
Following table has provided and made an energy is the approximation of the required magnetic field B of crooked 90 degree of electron beam of E.
Table 1
In the present invention for realizing that 90 spend the required magnetic field intensity of deflections and the relation of electron energy
Electron energy E magnetic field B
1500eV 51G
2000eV 59G
2500eV 66G
Other important documents shown in Fig. 2 b comprise the ion beam 120 that extracted, a source electrostatic screen plate 101, and a pair of reflector barricade 102a and 102b.These reflector barricade 102a and 102b have two kinds of purposes: shield electromagnetic and shielding stray electron or ion beam.For example, reflector barricade 102a and 102b can make electron beam 70a and 70b avoid the influence of the field that is associated with potential difference between the source barricade 101 with substrate 105a and 105b, and also as dumping ground from the stray electron bundle of opposed electronic emitter.101 of source barricades make ion beam 120 not be subjected to the potential difference between substrate 105a and 105b and the chamber 44 to produce the influence of field, and also are used to absorb stray electron and ion, otherwise these stray electrons and ion can influence the ion source important document.For this reason, reflector barricade 102a and 102b and source barricade 101 the two make by refractory metal (for example molybdenum or graphite).Perhaps, can ion beam 120 be shielded more up hill and dale with magnetic field B 135a and 135b come by make source barricade 101 by a ferromagnetic substance (for example magnetic stainless steel).
Fig. 2 c one shows the cutaway view of mechanical detail, and it clearly shows how content integration shown in Fig. 2 b is gone into shown in Fig. 2 a in the ion source.Wherein, with thermion mode emitting electrons, these electronics quicken to move to the anode of a pair of correspondence, form electron beam 70a and 70b thus by one or more white-hot filament 110a and 110b.This structure can provide some advantages.At first, white- hot filament 110a and 110b both can work respectively and also can work together.Second; because electron beam is in the outside generation of chamber; thereby the life-span of reflector obtain prolonging with respect to known configuration, this is because reflector is in and stays in the environment under low pressure that has ionogenic implantation machine vacuum chamber and reflector also is subjected to anti-ion bombardment protection effectively.
Magnetic flux from pair of permanent magnets 130a and 130b and a pair of magnetic pole assembly 125a and 125b constitutes the bundle guide field, is used for setting up uniform magnetic field at the air gap two ends of electron beam between the magnetic pole assembly end of wherein propagating.The matching way of the electron beam energy of magnetic field 135a and 135b and electron beam 70a and 70b must make electron beam 70a and 70b turn 90 degrees partially as shown in the figure and enter in the chamber 44. Make electron beam 70a and 70b deflection for example 90 the degree after, between reflector and chamber, promptly can not have sight line, can prevent that thus reflector is subjected to the bombardment of high energy charged particles.
Because Va is positive voltage with respect to chamber 44, thereby electron beam 70a and 70b can slow down when passing the gap of being defined by substrate aperture 106a and 106b and electron impact hole 71a and 71b.Therefore, substrate aperture 106a and electron impact hole 71a, and substrate aperture 106b and electron impact hole 71b, and the combination in gap therebetween form an electrostatic lens respectively, form a retarding lens in this example.Use retarding lens, can make people can regulate the ionization energy of electron beam and generation and deflection that can the appreciable impact electron beam.
This gap can be set up by one or more ceramic space sheet 132a and 132b, and ceramic space sheet 132a and 132b support each substrate 105a and 105b and as a bearing isolated with the source piece 35 that is in the chamber current potential.Ceramic space sheet 132a and 132b not only provide electric insulation but also provide mechanical support.It should be noted that for clarity sake not shown reflector barricade 102 and source barricade 101 in Fig. 3.
Because electron impact hole 106a and 106b can limit passing of electron beam 70a and 70b, thereby substrate 105a and the 105b part that can tackle high-power electron beam 70a and 70b.Therefore, substrate 105a and 105b must be subjected to initiatively cooling or passive cooling.Initiatively cooling can realize by making liquid coolant (for example water) flow through substrate.Perhaps, can by allow substrate reach one its can realize passive cooling by the temperature that obtains cooling off to its ambient radiation.This steady temperature depends on the power of the electron beam of tackling, the surface area of substrate and the temperature of emissivity and peripheral components.When using condensable gas (for example decaborane steam), it is possible preferable to allow that substrate 105a and 105b work at elevated temperatures, because condensable gas can form the film that has contaminative and can form particle on low-temperature surface.
Fig. 2 d shows the vertical view of the simplification in this ionogenic electron beam forming area territory.White-hot filament 110b is relative, and chamber 44 is in current potential Ve, for example-0.5keV, and anode 140b, magnetic pole assembly 125b, substrate 150b, and reflector barricade 102b all be in anode potential Va, 1.5keV for example.Therefore, electron beam energy is 2keV.Electron beam 70b can be in the air gap between the magnetic pole of magnetic pole assembly 125b in the effect deflect of magnetic field 135b, thereby make electron beam 70b pass substrate aperture 106b.The representative diameter value of substrate aperture 160a and 160b and electron impact hole 71a and 71b is respectively 1cm.
Fig. 3 shows that this ion source constitutes a cluster ion implant system proposed by the invention with the downstream components of key.Also can adopt and be different from structure shown in Figure 3.Wherein ion source 21 couples and extracts electrode 22, to form an ion beam 20 that contains cluster ion.Ion beam 20 contains the ion all substances of the ion with a set charge polarity (that is can form for it) of many kinds of different qualities usually in ion source 21.Then, ion beam 20 is injected analyzing magnet 23.Analyzing magnet 23 forms a dipole magnetic field according to the electric current in the magnet coil in the ion beam transport path; The direction in this magnetic field is perpendicular to plane shown in Figure 3.The function of analyzing magnet 23 is by ion beam being curved the quality that its radius depends on each single ion: the circular arc of charge ratio spatially is divided into the thin ion beam of a group component with ion beam.This circular arc is shown as an ion beam component 24, i.e. desired ion bundle in Fig. 3.Magnet 23 can make a set ion beam along one by the radius bend shown in the following equation (5):
(5)R＝(2mU) 1/2/qB
Wherein R is a bending radius, and B is a magnetic flux density, and m is a mass of ion, and U is an ion kinetic energy, and q is the state of charge of ion.
Selected ion beam only is made of quality-narrower ion of energy product scope, so that the bending radius of ion beam under the magnet effect makes this ion beam pass a quality discrimination hole 27.Not selected component then can not pass this quality discrimination hole 27 in the ion beam, but is tackled in other positions.For quality: charge ratio m/q is less than the ion beam 25 of selected bundle (being that the hydrogen ion of 1 or 2 atomic mass unit constitutes by quality for example), magnetic field can induce a littler bending radius, thereby makes this ion beam intersect at inner diameter wall 30 or other positions of magnet room.For quality: charge ratio is greater than the ion beam 26 of selected ion beam, and magnetic field can induce a bigger bending radius, thereby makes outside diameter wall 29 or other positions of this ion beam strikes magnet room.Well-known in affiliated technical field, analyzing magnet 23 constitutes a quality analysis system with quality discrimination hole 27, and it is used for selecting ion beam 24 from the many substance ions bundle 20 that extracts from ion source.Then, can make selected ion beam 24 pass a post-analysis acceleration/deceleration level 31.This level 31 can be adjusted to ion beam energy the desired required final energy value of concrete implantation technology.For example, post-analysis acceleration/deceleration level 31 can be the form of an electrostatic lens or a LINAC (linear accelerator).Differentiating that the ion that lives through charge-exchange or neutralization reaction (thereby not having correct energy) between hole and the disk is transmitted to disk, can be incorporated into " neutral beam filter " or " energy filter " in this ion beam path for preventing those.For example, post-analysis acceleration/deceleration level 31 can comprise " broken line (dogleg) " or a small angle deflection in the ion beam path that selected ion beam 24 is limited to follow because of a DC electromagnetic field that is applied; Become neutrality or will not affirm and can follow this path with the ion beam component of a plurality of electric charges.Then, as shown in Figure 3, the ion beam of process energy adjustment enters the ion beam scanning systems 32 in the implant system.These ion beam scanning systems 32 these ion beams of scanning are so that whole target 28 is subjected to even implantation.Can use various structures, for example use one dimension or bidimensional scanning system, reach static behaviour-magnetic scanning system.
Then, ion beam enters the disk process chamber 33 that also is in the high vacuum environment, and clashes into target 28 herein.Disk process chamber and disk transport system can have various structures, and main structure classes is sequential (next disk whenever) or batch processing formula (together handling many disks on a rotating disk).In the sequential process chamber, mechanically along the scanned ion beam of a dimension (horizontal or vertical), ion beam then scans with electromagnetic mode on orthogonal direction, has preferable spatially uniform to guarantee implant usually.In batch processing formula system, the rotation of rotating disk can radially provide mechanical scanning, also carries out simultaneously vertically or the scanning of horizontal direction, and it is static that ion beam then keeps.
Implant for cluster ion, arrange, need make n contained in an ion cluster dopant atom all infiltrate substrate with identical kinetic energy for accurate dopant is provided; Molecular ion is in the simple case of An+ (that is it is made of uniquely n dopant atom A) form therein, and each atom in this n dopant atom all must receive the 1/n of this ion cluster energy in infiltrating Semiconductor substrate the time in the same manner.For example, Sze exists The VLSI technology( VLSI Technology, McGraw Hill, 253-254 page or leaf (nineteen eighty-three)) in confirmed, when a polyatomic molecule clashed into a solid-state target surface, branch phenomenons such as this kind energy all can appear.In addition, the electrical result of this kind implantation need implant identical with the equivalence of using monatomic ion implantation to carry out.These results are shown in " decaborane; a kind ofly be used for the alternative method (Decaborane; an Alternative approach to Ultra Low EnergyIon Implantation) that ultra-low energy ion is implanted " (XIII international ion embedding technology meeting proceedings of IEEE of holding at Austrian Alpsbach in detail by people such as Jacobson, 300-303 page or leaf (2000)), set forth at the situation of using decaborane to implant, in fact, estimate bunch all can to obtain identical result for any dopant.
During ion was implanted, dopant atom may deeper infiltrate in the Semiconductor substrate by tunnelling (promptly entering substrate lattice along symmetry direction or " tunnel " that contains a low lattice atoms density).If ion trajectory overlaps with the direction of a passage in the semiconductor lattice, then ion can not collide substrate atoms substantially, thereby can enlarge the bombardment scope of dopant.A kind ofly be used to limit even prevent that the effective ways of tunnelling from being to form an amorphous layer on substrate surface.A kind of method that forms this one deck is to implant the ion that the element ion identical with the formation element of substrate or implantation have same electrical character (promptly from the same hurdle in the periodic table) in substrate, so that the crystal damage that this implantation process caused is enough to eliminate the crystal structure and the electrical property of change substrate in activating step subsequently not of the layer at substrate surface place.For example, can be in silicon substrate with the energy, 5 * 10 of 20keV 14Cm -2Dosage implanted silicon or germanium, in silicon substrate, to form this amorphous layer, re-use cluster ion subsequently and implant and carry out shallow doped layer and implant.
One important application of this kind method is the part as the CMOS manufacturing sequence, uses cluster ion to implant and forms N-type and P-type shallow junction.CMOS is present employed main digital integrated circuit technology, its namelist be shown in form on the same chip N-raceway groove and P-channel MOS transistor the two (complementary ( COmplementary) MOS:N and P the two).The successful part of CMOS is that circuit designers can utilize opposite transistorized complementary character to form better circuit, especially forms the circuit that the active power of being drawn is lower than other technologies.It should be noted that term N and P be based on negativity ( nEgative) and positivity ( pOsitive) (the N-N-type semiconductor N has the negativity majority carrier, and vice versa), and if each regional type (polarity) of counter-rotating, then N-raceway groove and P-channel transistor are with mutually the same.On same substrate, make two types transistor and require to implant a N-type impurity in regular turn and implant a P-type impurity then, use a photoresist screen to protect the device of another type simultaneously.It should be noted that the zone that each transistor types all requires to have two kinds of polarity can correctly work, but the implant and the transistor that form shallow junction are same type: the shallow implant of N-type forms the N-raceway groove, the shallow implant formation of P-type P-raceway groove.An example of this technology is shown among Fig. 4 a and Fig. 4 b.Particularly, Fig. 4 a demonstration is a kind of passes through the method that a N-type bunch implantation 88 forms N-channel drain zones of extensibility 89, and Fig. 4 b shows by a P-type bunch implantation 91 formation P-channel drain zones of extensibility 90.The two all requires to have the shallow junction of same structure to it should be noted that N-type and P-transistor npn npn, thereby has both used the N-type also to use bunch implantation of P-type to help forming the advanced CMOS structure.
Fig. 5 shows that this kind method is at an application example of making under the nmos pass transistor situation.This figure shows the Semiconductor substrate 41 after some the front end fabrication process step that has experienced more than half conductor devices.This structure is made up of a N-N-type semiconductor N substrate 41, and this Semiconductor substrate 41 is handled through following steps: P-trap 43, channel insulation 42 and gate stack form 44,45.P-trap 43 forms a knot with N-type substrate 41, and this transistor of becoming in the trap provides junction isolation.42 of channel insulations provide horizontal dielectric insulation in (promptly in whole C MOS structure) between N-trap and the P-trap.Then, make the gate stack that comprises gate oxide 44 and polysilicon gate electrode 45, for forming the transistor gates lamination, gate oxide 44 and polysilicon gate electrode 45 have passed through patterning.In addition, also applied photoresist 46 and with its patterning, so that expose corresponding to the zone of nmos pass transistor, other zones in the substrate then are subjected to the protection of photoresist layer 46.At this moment, in this technological process, substrate has promptly performed drain extension and has implanted preparation, and it is device fabrication the most shallow required doped layer that drain extension is implanted.0.13 the typical process of the forward position device of μ m technology node require be arsenic implant energy between 1keV and 2keV, the arsenical amount is 5 * 10 14Cm -2Then, make ion beam 47 (be As in this example 4H x +) the directive Semiconductor substrate, the direction of propagation that must make ion beam is perpendicular to substrate, in order to avoid be subjected to the concealment of gate stack usually.As 4H x +Bunch energy should be required As +Implant energy four times, for example between 4keV and 8keV.Ion cluster dissociates when the bump substrate, and dopant atom is static following in the shallow-layer near semiconductor substrate surface then, and this shallow-layer promptly forms drain extension 48.It should be noted that the superficial layer of identical implant meeting access door electrode 49, for gate electrode provides extra doping.Therefore, the described technology of Fig. 5 is an important application of method proposed by the invention.
Another example of this method is shown among Fig. 5 a: form dark source/drain regions.This figure shows that Semiconductor substrate 41 shown in Figure 5 has lived through other process for fabrication of semiconductor device steps.These other processing steps comprise: form a pad oxide 51 and form wall 52 on the sidewall of gate stack.At this moment, apply a photoresist layer 53 and, the transistor of implanting with the exposure desire (being nmos pass transistor in this example) with its patterning.Next, implement ion and implant, form source electrode and drain region 55.Because this implant to require to implant with low-yield, heavy dose, thereby it be an appropriately application of bunch implantation method proposed by the invention.0.13 the typical case of μ m technology node implants parameter and is about: 6keV/ arsenic atom (54) and 5 * 10 15Cm -2The arsenical amount, thereby it need carry out a 24keV, 1.25 * 10 15Cm -2As 4H x +Implant, perhaps a 12keV, 2.5 * 10 15Cm -2As 2H x +Implant, or a 6keV, 5 * 10 15Cm -2As +Implant.As shown in Figure 5, implanting by this can formation source electrode and drain region 55.These zones can provide a high conductivity to be connected with being defined in conjunction with channel region 56 and gate stack 44,45 by drain extension 48 at each circuit interconnection line (will follow-up formation in this technology) between the intrinsic transistor that form.It should be noted that gate electrode 45 can be exposed to this implantation (as shown in the figure), if really be that so then the source/drain implant can provide main doped source for gate electrode.This is shown as multiple doped layer 57 in Fig. 5 a.
Fig. 5 b and 5c show the detail drawing that forms PMOS drain extension 148 and pmos source and drain region 155 respectively.If put upside down doping type, then Fig. 5 a is identical with structure shown in the 5b and technology.In Fig. 5 b, form PMOS drain extension 148 by implanting a boron bunch implant 147.For 0.13 μ m technology node, this time the canonical parameter of implanting is that 500eV/ boron atom and dosage are 5 * 10 14Cm -2Therefore, B 10H xThe energy of implanting is that 5keV and decaborane dosage are 5 * 10 13Cm -2Fig. 5 c shows once more by implanting one such as P-type ion beam such as decaborane 154 formation pmos source and drain regions 148.For 0.13 μ m technology node, this time the canonical parameter of implanting is that the dosage of 2keV/ boron atom and boron is 5 * 10 15Cm -2(promptly 5 * 10 14Cm -2The 20keV decaborane).
Generally speaking, ion is implanted and self is not enough to form efficient semiconductor knot; The dopant of implanting for making electrically activates, and need heat-treat.After implanting, the crystal structure of Semiconductor substrate can be subjected to heavy damage (substrate atoms is moved out of lattice position), and the dopant of implanting be bonded to substrate atoms a little less than only, thereby the electrical property of institute's implant layer is relatively poor.Normally at high temperature (be higher than 900 ℃) and implement heat treatment or anneal the repairing semiconductor crystal structure, and dopant atom is located in the replacement mode, be about to dopant atom and place one of them substrate atoms position of crystal structure.It is electroactive that this kind replacement makes dopant combine and to become with substrate atoms to have; In other words, change the conductance of semiconductor layer.Yet this kind heat treatment meeting has the opposite effect to the formation of shallow junction, and this is because during heating treatment the dopant of implanting can spread.In fact, the boron diffusion during the heat treatment is the limiting factor that obtains USJ in inferior 0.1 micrometer range.For the diffusion that makes shallow implantation dopant minimizes, developed at present and be used for the heat treated advanced technologies of this kind, for example " peak value annealing ".Peak value annealing is a kind of quick thermal treatment process: wherein the residence time at the maximum temperature place approaches zero: temperature rises suddenly as quickly as possible and descends.By this kind method, reach activate the required high temperature of the dopant of implanting the diffusion of the dopant of implanting is minimized.Can expect that this kind advanced person's Technology for Heating Processing will be used in combination with the present invention, so that it is to making the benefit maximization of completed semiconductor devices.
Fig. 6 demonstrates the generation of phosphorus cluster ion and passes through the formation of the phosphorus ion beam of quality discrimination.This mass spectrum shows use hydrogen phosphide (PH 3) as source material gas, fetch data at ion source duration of work of the present invention.This mass spectrum shows that (it determines mass of ion: relation charge ratio) for ionic current intensity on the vertical scale 61 and the analyzer magnetic field on the horizontal scale 62.Electric current is to measure in a Faraday cup that wherein secondary electron is subjected to effectively restraining.Horizontal scale 62 is linear with magnetic field, but with quality: charge ratio becomes non-linear relation, because for a set extraction voltage V, the pass between these two amounts is m/q=aB 2, wherein a is a constant.This make high more quality peak value on horizontal scale 62 the closer in together.Phosphorus bunch is to observe as signal 65,66 and 67, and it has two, three and four phosphorus atoms/every bunch respectively.To this mass spectral the analysis showed that, formation and maintenance that ion source of the present invention can be supported bunch during operation.First group of signal 63 in left side is hydrogen ion among the figure, and its mass number is 1 and 2.The peak value of hydrogen is less relatively, much smaller than the peak value that contains phosphonium ion.Second group of signal 64 comes across between quality 31 and 35, and it is corresponding to the ion that contains a phosphorus atoms.In a traditional implantation technology, one, several or all these peak values are implanted in the selection in visual selected quality discrimination hole 27 (referring to Fig. 2) and deciding.In some applications, if comparatively responsive to H in technology, then may require only to select 31P +Peak value.In such cases, can adopt a narrow quality discrimination hole to get rid of hydride peak value, for example PH x +, x=1 wherein, 2,3 or 4.Other technologies then may require to implant all peak values in this group, to boost productivity.Next group signal 65 on right side is by the dimer P of phosphorus 2 -Form, wherein each particle in these particles all contains two phosphorus atoms.The large-signal of the leftmost side is 62 P corresponding to mass number 2 +, the adjacent signals on right side then is corresponding to P 2H x +Signal, wherein x is between 1 and 6.Also notice that the intensity of these signals reduces than monomer peak value 64, also can be optimized, for example, then make P if dimer is used in expectation at required ion beam conditions but the intensity that is observed depends on whole group source input set point 2 +The relative weight maximization of peak value.The choosing of quality discrimination hole can define how many these ion beams will be implanted in implanting technology.Next sets of signals 66 on right side is corresponding to containing three phosphorus atoms (P 3 +) the phosphorus cluster ion.Next signal 67 on right side is corresponding to the phosphorus cluster ion that contains four phosphorus atoms.What is interesting is that we can notice that the intensity of this bunch is greater than P 3H x +Bunch, use P 4 +Bunch the time clean dose rate (4 * institute observed strength) be higher than and implanting P +Or P 2 +The time clean dose rate, and the energy of each phosphorus atoms of being implanted only for the nominal ion beam energy 1/4.
Fig. 7 shows AsH when use is of the present invention 3Mass spectrum.Ion beam energy is 19keV, thereby As 4H x +Effective As implant energy and will be 4.75keV.As among Fig. 7 4H x +Ion beam current be about 0.25mA, thereby the equivalence As dopant electric current be about 1mA.Fig. 7 also shows, implants and contains As, As 2, As 3Or As 4Ion beam will obtain ionic current between 0.5mA and 1.0mA, and only select mass spectral different piece shown in Figure 7 by regulating the analyzer magnet current, promptly also can obtain between about 20 and 5keV between effective implantation energy range.
Fig. 8 shows As 4H x +Electric current and As implant the functional relation of energy.The angular divergence of ion beam laterally or disperse and be limited to half angle or 11mR on the direction, or is about 0.6 degree by the hole between quality discrimination hole (for example referring to 27 among Fig. 3) and the Faraday cup.The 1keV/ atom is a lower limit of arsenic being implanted semiconductor technology required in the USJ device.
Fig. 9 demonstration is scaled the ion beam brill with ion beam current shown in Figure 8, and compares with one " typical case's " modern medium electric current implantation machine.Its improvement amount is about 30 times (technical specification of supposing this medium current implantation machine is: 40mrad half-angle degree acceptance, the ion beam current under 10keV are 200 μ A).Stephens is defined as brightness B in ion embedding technology handbook (Handbook of Ion Implantation Technology, J.F.Ziegler version, North-Holland, 455-499 page or leaf (1992)):
(6)B＝2I/π 2ε 2(μA-mm 2-mrad 2)，
Wherein I is effective dopant ion beam electronic current (unit is microampere), and ε is the ion beam emittance, and unit is square (milliradian-millimeter).Emittance is calculated by following formula:
(7)ε＝δa，
Wherein δ is the half width of ion beam in dispersive plane, and a is half cone pencil of forms angle, and the two is promptly differentiating that the place, hole site records all at plane of delineation place.
Ion beam brightness is one to be used for quantizing having how many ion beam currents can (for example) to convert the important indicator of certain receiving amount to by a pipe with certain diameter and length.Because the Ion Implantation Equipment bunch has clearly the receiving amount of regulation, thereby for the limited ion beam of emittance, brightness is that an important productivity ratio is measured.The limiting factor of emittance during normally low energy beam transports.We notice that this is to use cluster ion but not the benefit place of use monomer ion basically, shown in equation (1)-(3).For As 4Implant,, estimate that the raising amount for the treatment of capacity is 16 times, i.e. Δ=n according to equation (3) 2
Figure 10 demonstration is used AsH respectively under 4.75keV and 19keV x +And As 4H x +The secondary ion mass spectroscopy (SIMS) that ion pair silicon sample obtains when implanting.Atom dosage is about 1 * 10 16Cm -2Used usually complete dynamic scattering model TRIM compared when the ion implantation was carried out in simulation in silicon in the sector with one with these data, and the result shows that we just implant As and As with prescribed energy really 4
Figure 11 shows diborane B 2H 6Mass spectrum, diborane is a kind of in conventional ion is implanted and be of little use but market gaseous material on sale.Figure 11 shows H (H +, H 2 +, H 3 +), B (B, BH +, BH 2 +), B 2(B 2 +, B 2H +, B 2H 2 +, B 2H 3 +, B 2H 4 +), B 3(B 3, B 3H +, B 3H 2 +, B 3H 3 +, B 3H 4 +), B 4(B 4, B 4H +, B 4H 2 +, B 4H 3 +, B 4H 4 +) a grouping and a B 5Group.Mass spectral deciphering shown in Figure 11 may be slightly complicated, and this is because there is the isotope of the boron of two kinds of Lock-ins 10B reaches 11B, it is with about 4: 1 11B is right 10The B ratio represents that this ratio has reflected its natural abundance.For example, exist simultaneously at peak value place with 11 atomic mass units 11B reaches 10BH the two.
Figure 12 demonstrates the generation of the hydride bunch and the positive cluster ion of boron among the present invention.This mass spectrum is presented at the decaborane B that uses gasification 10H 14Fetch data at ion source duration of work of the present invention during as the source raw material.Show B among the figure yH x +The hydride of the boron of form (wherein 1≤y≤10,0≤x≤14) bunch, its be separated by respectively 1amu and from 1amu to about 124amu.The peak signal B that is observed 10H x +Corresponding to the decaborane molecule ion, it is by decaborane parent molecule direct ionization is formed.
Figure 13 shows a decaborane negative ion mass spectrum by ion source generation of the present invention, and it is similar to mass spectrum shown in Figure 12.The negative formed ionic condition of decaborane ion is wanted much less, thereby the ion packet of most of (about 90%) is contained in female B 10H x -In the peak value.It is very useful to use anion that semiconductor is carried out the ion implantation, because it can essence eliminate the disk charging phenomenon that is observed when cation is implanted.Usually, an ion source can not produce simultaneously the cation of capacity of a set material and anion the two; Peak value ionic current shown in Figure 12 and 13 identical (being in the twice).In Figure 14, this has been carried out distinct demonstration at the mass range of an expansion.These data are to collect in the following way: use ion implant system of the present invention to collect a positive ion mass spectrum, and the polarity of the Ion Implantation Equipment power supply that reverses then, and on a piece of paper, collect negative ion mass spectrum in the equal in quality scope.For collecting Figure 14, with Faraday cup current feed to x-y paper records instrument.Under using the decaborane situation, implant anion but not implant cation and can obviously have some significant advantage: 1) have more useful ionic current to be in the interested peak value of institute, thereby produce bigger useful dopant flux; 2) quality of parent peak value has narrowed down nearly 1/2nd (the full width at second maximum place of anion situation has been 5 atomic mass units, and be nine atomic mass units under the cation situation), and 3) when using anion to replace cation, eliminated the disk charging phenomenon, this is accepted extensively in affiliated technical field.
Figure 15 shows with the two SIMS distribution curve of the positive decaborane ion in the decaborane energy implanted silicon sample of 20keV and negative decaborane ion.If each ion all has the boron atom of equal number, then these distribution curves can be intimate identical as people estimate, and therefore implant identical preset range.
Figure 16 shows the SIMS data under the negative decaborane implantation situation, and it has also shown the concentration of H.The dosage of H is 0.9 times of dosage of boron, and this average chemical molecular formula that shows negative decaborane is B 10H 9 -
Figure 17 is presented at how the ionization probability depends on electron energy under the electronic impact ionization situation.Use ammonia (NH among the figure 3) separate as example.Among the figure probability is expressed as cross section sigma, unit is 10 -16Cm 2The unit of electron energy (T) is eV, i.e. electronics-volt.Show the test data that two groups of theoretical curves that calculate according to first principle (being labeled as BEB (vertically IP) and BEB (adiabatic IP)) and two groups are drawn by people such as Djuric (1981) and Rao and Srivastava (1992) among the figure.Figure 17 has shown the following fact: some electron energy scope can cause ionization greatly than other energy ranges.Although these data are applicable to the generation cation, yet similar Consideration also is applicable to the generation of anion: obviously have strong energy dependence.Generally speaking, when the electronic impact energy is between about 50eV and 500eV, produce the cross section maximum of cation, and when about 100eV, reach peak value.Therefore, the energy when electron beam enters chamber 44 is an important parameter, and it can influence the ionogenic operation of the present invention, so our designed electron beam transports the energy of the electronics that makes the infiltration chamber extremely variable between about 5000eV near zero eV.Fig. 2 b to Fig. 2 d shown device shown the present invention how to comprise can to electronic impact ionization energy carry out broad control simultaneously ionogenic electron beam form and deflecting region near the electron-optical arrangement of working under the constant condition.
Figure 18 is the mass spectrum of the positive decaborane ion of use ion source generation of the present invention.Marked respectively among the figure and constituted these mass spectral various ions.Generally speaking, these ions are B nH x +Form, wherein 1≤n≤10,0≤x≤14.Largest peaks is female B 10H x +Ion, wherein the major part of this peak strength is in about 8amu (atomic mass unit).This parent ion may be selected to be used for cation and implant.
Figure 19 is the negative decaborane ion of use ion source generation of the present invention and the mass spectrum of positive decaborane ion.Marked respectively among the figure and constituted these mass spectral various ions.Wherein the anion spectrum is simple more than the cation spectrum.Particularly, do not have tangible hydrogen ion or low order boron ion more, and this mass spectral about 90% is by female B 10H x +Ion constitutes.With B 10H m +Ion is similar, and most of peak strength of this negative parent ion is in about 8amu.This parent ion may be selected to be used for anion and implant.
There are some kinds of elements to be used in and form shallow junction in the semiconductor.For silicon was used, main dopant was boron, phosphorus, arsenic and antimony, thereby these elements most possibly are used to form shallow junction.In addition, silicon and germanium implant are used for forming amorphous areas at silicon, thereby bunch will being applicable to of these factors forms shallow amorphous areas.For compound semiconductor, be applicable to that the element of shallow junction comprises silicon, germanium, tin, zinc, cadmium and beryllium, thereby these elements bunch have an opportunity to be used for to form shallow junction in the compound semiconductor manufacturing.
An aspect of this method is to provide to be applicable to the correct environment that forms cluster ion in chamber.Each element in the described various element all has different chemical property, thereby suitable environment can be different because of each element.Be to obtain optimum performance, each element and each selected bunch all will require to use one group of different input parameters.Being available for carrying out optimized parameter comprises: by the source pressure of raw material current control, by the temperature in the chamber of temperature control system control, ionization energy intensity and characteristic, for example electron beam current when the ionization energy is electron beam and electron energy.These basic parameters form together and are applicable to and form dopant bunch and with the suitable source ion room environmental of dopant cluster ionization.
As indicated above, implant with the ion of single dopant atom and to compare, the ion of dopant atom bunch implant make people can be efficiently with a shallow degree of depth implant N-type and P-type dopant the two.
Above set forth the present invention with some embodiment.Yet the present invention is not limited to this.For example, the person of ordinary skill in the field easily knows, also can make various modifications, change, improvement and combination to it.
Obviously, according to institute's teaching content above, can make many modifications and changes to the present invention.Therefore, should be appreciated that, can be in claims scope of enclosing, be different from above concrete other modes of setting forth implement the present invention.

Claims (20)

1. one kind dopant material implanted method in the substrate, this method comprises the steps:
Produce P from one first molecular substance nH x +The N-type cluster ion of form, wherein n and x are integer, and n is in 2≤n≤4, x is in the scope of 0≤x≤6;
Produce P-type cluster ion from one second molecular substance;
Described N-type cluster ion is implanted in the first area on the substrate; And
Described P-type cluster ion is implanted in the second area on the described substrate.
2. the method for claim 1 wherein comprises from the step that one first molecular substance produces N-type cluster ion: from hydrogen phosphide (PH 3) gas produces described N-type cluster ion.
3. the method for claim 1 wherein comprises from the step that one first molecular substance produces N-type cluster ion: produce described N-type cluster ion from the steam P of element phosphor.
4. method as claimed in claim 2, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 4 +Cluster ion.
5. method as claimed in claim 3, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 4 +Cluster ion.
6. method as claimed in claim 2, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 3 +Cluster ion.
7. method as claimed in claim 3, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 3 +Cluster ion.
8. method as claimed in claim 2, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 2 +Cluster ion.
9. method as claimed in claim 3, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 2 +Cluster ion.
10. method as claimed in claim 2, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 4H x +Cluster ion, wherein x is an integer and 1≤x≤6.
11. method as claimed in claim 2, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 3H x +Cluster ion, wherein x is an integer and 1≤x≤5.
12. method as claimed in claim 2, wherein the step from one first molecular substance generation N-type cluster ion comprises: produce P 2H x +Cluster ion, wherein x is an integer and 1≤x≤4.
13. the method for claim 1, wherein the step from one second molecular substance generation P-type cluster ion comprises: from decaborane (B 10H 14) gas produces described cluster ion.
14. method as claimed in claim 13, wherein the step from one second molecular substance generation P-type cluster ion comprises: produce B nH x +Cluster ion, wherein n and x are integer and 2≤n≤10,0≤x≤14.
15. method as claimed in claim 14, wherein the step from one second molecular substance generation P-type cluster ion comprises: produce B 10H x +Cluster ion, wherein x is an integer and 0≤x≤14.
16. the method for claim 1, wherein the step from one second molecular substance generation P-type cluster ion comprises: produce negative B 10H x -Cluster ion, wherein x is an integer and 0≤x≤14.
17. a semiconductor device, it comprises:
One substrate;
One P nH x +The N-type dopant of form, in the first area of its implanted described substrate, wherein n and x are integer, and n is in 2≤n≤4, x is in the scope of 0≤x≤6; And
One P-type dopant is in one second area of the described substrate of its implanted formation semiconductor device.
18. semiconductor device as claimed in claim 17, wherein said P-type dopant is B nH x +, wherein n and x are integer, and n is in 2≤n≤4, x is in the scope of 0≤x≤6.
19. semiconductor device as claimed in claim 17, wherein said P-type dopant is B nH x -, wherein n and x are integer, n=10 and x are in the scope of 0≤x≤14.
20. semiconductor device as claimed in claim 17, wherein said P-type dopant is B nH x +, wherein n and x are integer, and n=10, x is in the scope of 0≤x≤14.
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