CN101308764A - Method for eliminating residual polymer of etching procedure - Google Patents
Method for eliminating residual polymer of etching procedure Download PDFInfo
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- CN101308764A CN101308764A CNA2007100406462A CN200710040646A CN101308764A CN 101308764 A CN101308764 A CN 101308764A CN A2007100406462 A CNA2007100406462 A CN A2007100406462A CN 200710040646 A CN200710040646 A CN 200710040646A CN 101308764 A CN101308764 A CN 101308764A
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- etching
- wafer
- residual polymer
- dry ecthing
- semiconductor wafer
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Abstract
The invention provides a method to remove residual polymer during etching process. Firstly, a wafer is processed with dry etching in a main etching chamber; then the anticorrosion protective film of the wafer is removed in a decoating chamber; finally, the wafer is again disposed into the main etching chamber for dry etching for the second time; in this way, the residual polymer in the etching process can be gotten rid of. Compared with prior art, the method described by the invention is easy to realize and can thoroughly remove the residual polymer and eliminate coronary defects without increasing production cost by a large margin.
Description
Technical field
The present invention relates to a kind of manufacture of semiconductor method, specifically, relate to a kind of method of eliminating residual polymer of etching procedure.
Background technology
The etch processes operation is one of operation necessary in the manufacture of semiconductor, and its effect is to pass through the part that is not covered or protect by photoresistance on the wafer of developing procedure before this, to be removed with the chemical reaction or the mode of physical action.Wherein, (Metal-Insulator-Metal MIM) can run into the problem of coronary fault during etching carrying out metal-insulator-metal.This generation of defects mainly is because in processing procedure, non-volatile by-products such as tantalic chloride (TaClx) 10 etc. can (Photo Resistor PR) deposits on material 20 sidewalls, and after photoresist 20 removes, forms crown tantalic chloride polymer 30 in photoresistance.Though also have the step of wet-cleaning (wet clean) in processing procedure after this, this step can't be removed above-mentioned polymer 30.
At present, industry adopts following two kinds of methods to solve the problems referred to above usually:
1. adopt silicon oxynitride (SION) as hard mask (hard mask).This mode can be improved defect condition, but can't eliminate defective fully;
2. (this mode can be eliminated defective for chemical Machine Polishing, CMP) step, but increases production cost greatly to add extra cmp.
Summary of the invention
The object of the present invention is to provide a kind of manufacture of semiconductor method, specifically, relate to a kind of method of eliminating residual polymer of etching procedure.
For achieving the above object; the invention provides a kind of method of eliminating residual polymer of etching procedure; this method comprises at first by in main etching reaction chamber wafer being carried out dry ecthing; next in the striping reative cell, remove the anticorrosion protection film of wafer; at last wafer is inserted main etching reaction chamber; carry out dry ecthing once more, remove polymer residual in etching step with this.
Compared with prior art, method of the present invention realizes easily, can remove residual polyalcohol fully, eliminates coronary fault, and can significantly not increase production cost.
Description of drawings
To the description of the embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the etchant flow schematic diagram of prior art.
Fig. 2 eliminates the etchant flow schematic diagram of the method for residual polymer of etching procedure for the present invention.
Embodiment
The process tool that is used for the conductor etching operation comprises the main etching reaction chamber (chamber) that is used for main etching (Main Etch), and the striping reative cell that is used for striping (strip).Wherein, main etching step has removed most polysilicon and has not damage gate oxide, and the striping step has been removed the anticorrosion protection film that uses before this.
See also Fig. 1, be the schematic flow sheet of existing conductor etching operation.It is the main etching step from main etching reaction chamber, proceeds to the striping step of striping reative cell, and at this moment, polymer is created on the sidewall.
Usually, etching technique can be divided into wet etching (wet etching) and dry ecthing (dry etching) two classes.In wet etching, be to use chemical solution, via chemical reaction to reach etched purpose; And the dry ecthing summary is so-called electric paste etching (Plasma Etching).The electricity slurry is a kind of phenomenon that is in after gas molecule is excited or dissociates under collapse (Breakdown) state, in the environment of electricity slurry, forms and comprises charged ion, atomic group, molecule and electronics etc.Etching action in the electric paste etching may be the physical action of charge ion bump chip surface in the electricity slurry, perhaps may be atomic group and the interatomic chemical reaction of chip surface in the electricity slurry, even also may be the two composite action.
Characteristics of the present invention are, added new main etching step and solve problems of the prior art in above-mentioned traditional process, remove the polymer 30 that forms in main etching step thus.Simultaneously, two main etching steps all adopt the mode of dry ecthing to carry out.
See also Fig. 2, etching work procedure of the present invention mainly is made up of the following step:
1. in main etching reaction chamber, wafer is carried out dry ecthing, with chlorine (CL
2, BCL
3) and oxygen (O
2) carry out etching;
2. in the striping reative cell, wafer is carried out striping, remove the anticorrosion protection film;
3. wafer is inserted main etching reaction chamber, carry out dry ecthing once more.This dry ecthing also, also can adopt chlorine (CL
2, BCL
3) and oxygen (O
2) carry out.
Certainly, except that above-mentioned steps, engraving method of the present invention also comprises the step in the general etch process, the wet-cleaning after for example break through step before main etching step (Break Through), and main etching step, mistake etching (Over Etch) step etc.
The method of elimination residual polymer of etching procedure of the present invention realizes easily, can remove residual polyalcohol fully, eliminates coronary fault, and can significantly not increase production cost.
Claims (7)
1, a kind of method of eliminating residual polymer of etching procedure is characterized in that, said method comprising the steps of:
A. in main etching reaction chamber, wafer is carried out dry ecthing;
B. in the striping reative cell, remove the anticorrosion protection film of wafer;
C. wafer is inserted main etching reaction chamber, carry out dry ecthing once more.
2, plasma concentration detection device as claimed in claim 1 is characterized in that, described step a and step c carry out etching with chlorine and oxygen.
3, a kind of engraving method of semiconductor wafer is characterized in that, said method comprising the steps of:
A. wafer is carried out dry ecthing;
B. remove the anticorrosion protection film of wafer;
C. once more wafer is carried out dry ecthing.
4, the engraving method of semiconductor wafer as claimed in claim 3 is characterized in that, described method further comprises a break through step.
5, the engraving method of semiconductor wafer as claimed in claim 3 is characterized in that, described method further comprises a wet-cleaning step.
6, the engraving method of semiconductor wafer as claimed in claim 3 is characterized in that, described method comprises that further one crosses etching step.
7, the engraving method of semiconductor wafer as claimed in claim 3 is characterized in that, described step a and step c carry out etching with chlorine and oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100406462A CN101308764B (en) | 2007-05-15 | 2007-05-15 | Method for eliminating residual polymer of etching procedure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100406462A CN101308764B (en) | 2007-05-15 | 2007-05-15 | Method for eliminating residual polymer of etching procedure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101308764A true CN101308764A (en) | 2008-11-19 |
| CN101308764B CN101308764B (en) | 2011-03-23 |
Family
ID=40125137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100406462A Expired - Fee Related CN101308764B (en) | 2007-05-15 | 2007-05-15 | Method for eliminating residual polymer of etching procedure |
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|---|---|
| CN (1) | CN101308764B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102592985A (en) * | 2012-02-28 | 2012-07-18 | 上海华力微电子有限公司 | Method for etching silicon oxide gate compensation isolation area |
| WO2012167886A1 (en) | 2011-06-07 | 2012-12-13 | Oerlikon Trading Ag, Trübbach | Method for removing hard carbon layers |
| US9230778B2 (en) | 2011-06-07 | 2016-01-05 | Oerlikon Surface Solutions Ag, Trubbach | Method for removing hard carbon layers |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330395A (en) * | 2000-06-27 | 2002-01-09 | 茂德科技股份有限公司 | Method for removing residuals after removing photoresist |
| US6849559B2 (en) * | 2002-04-16 | 2005-02-01 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
| CN1226455C (en) * | 2002-07-19 | 2005-11-09 | 联华电子股份有限公司 | Residual polymer eliminating method |
| CN100377314C (en) * | 2005-12-02 | 2008-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for removing residual polymer in polysilicon etching technology |
-
2007
- 2007-05-15 CN CN2007100406462A patent/CN101308764B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012167886A1 (en) | 2011-06-07 | 2012-12-13 | Oerlikon Trading Ag, Trübbach | Method for removing hard carbon layers |
| DE102011105645A1 (en) | 2011-06-07 | 2012-12-13 | Oerlikon Trading Ag, Trübbach | Method for reactive stripping of tetrahedral carbon layer on semiconductor wafer of e.g. chipping tool, involves performing plasma discharge process in vacuum chamber to support chemical reaction for stripping of carbon on substrate |
| US9230778B2 (en) | 2011-06-07 | 2016-01-05 | Oerlikon Surface Solutions Ag, Trubbach | Method for removing hard carbon layers |
| CN102592985A (en) * | 2012-02-28 | 2012-07-18 | 上海华力微电子有限公司 | Method for etching silicon oxide gate compensation isolation area |
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| Publication number | Publication date |
|---|---|
| CN101308764B (en) | 2011-03-23 |
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